CN112038228B - Surface treatment method for improving continuity of TiN film - Google Patents
Surface treatment method for improving continuity of TiN film Download PDFInfo
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- CN112038228B CN112038228B CN202010877282.9A CN202010877282A CN112038228B CN 112038228 B CN112038228 B CN 112038228B CN 202010877282 A CN202010877282 A CN 202010877282A CN 112038228 B CN112038228 B CN 112038228B
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- silicon dioxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a surface treatment method for improving continuity of a TiN film, which comprises the following steps: step S1, growing a silicon dioxide layer on the silicon substrate; step S2, processing the surface of the silicon dioxide layer by using a solution containing a strong oxidant; and step S3, growing a TiN film on the surface of the processed silicon dioxide layer. The invention adopts the solution containing strong oxidant to treat the surface of silicon dioxide, and the unsaturated-OH bonds on the surface of the silicon dioxide act to form stable Si-O-Si bridge bonds through the strong oxidizing property of the solution, so that a compact passivation layer of SiOx is formed on the surface, and oxygen elements are prevented from jumping into TiN from the silicon dioxide, thereby ensuring the growth continuity of TiN, and finally ensuring that the prepared TiN film has good continuity, thin thickness and good uniformity.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a surface treatment method for improving continuity of a TiN film.
Background
With the characteristic size of a semiconductor device entering a 45nm technical node, in order to reduce gate tunneling current, reduce power consumption of the device, thoroughly eliminate polysilicon depletion effect and relieve Fermi level pinning effect, the adoption of a high dielectric constant (K)/metal gate material to replace a traditional SiO 2/polysilicon (poly) structure has become a necessary choice.
Among them, titanium nitride (TiN) materials are often used as metal gates to store charges and conduct electrons due to their characteristics of good thermal stability and suitable work function (4.63-4.75 eV).
Fig. 1 shows a Transmission Electron Micrograph (TEM) and a dark field image (HAADF) of a gate fabricated by using a stacked structure of an oxide layer and titanium nitride in a 38SF (38Super Flash), in which, since titanium nitride is easily oxidized, oxygen enters a titanium nitride lattice at a high temperature instead of nitrogen, thereby causing discontinuity in the growth of a titanium nitride TIN film (as shown in the mechanism diagram of discontinuous growth of a titanium nitride film in fig. 2), and causing leakage of the device.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a surface treatment method for improving the continuity of a TiN film, which can solve the problem of discontinuous growth of a titanium nitride film in the prior art.
In order to solve the above problems, the present invention provides a surface treatment method for improving continuity of a TiN film, comprising the steps of:
step S1, growing a silicon dioxide layer on the silicon substrate;
step S2, processing the surface of the silicon dioxide layer by using a solution containing a strong oxidant;
and step S3, growing a TiN film on the surface of the processed silicon dioxide layer.
In step S1, a silicon dioxide layer is grown using CVD plasma.
Preferably, the growth temperature of the silicon dioxide layer is 50-100 ℃.
Preferably, the growth temperature of the silicon dioxide layer is 60 ℃.
In step S2, the surface of the silicon dioxide layer is treated with SC1 solution.
In step S3, a TiN film is grown in a furnace.
In step S2, the surface of the silicon dioxide layer is processed to form a dense passivation layer.
Compared with the prior art, the invention adopts the solution containing the strong oxidant to treat the surface of the silicon dioxide, unsaturated-OH bonds on the surface of the silicon dioxide are acted into stable Si-O-Si bridge bonds through the strong oxidizing property of the solution, a compact passivation layer of SiOx is formed on the surface, and oxygen elements are prevented from jumping into TiN from the silicon dioxide, so that the growth continuity of the TiN is ensured, and finally, the prepared TiN film has good continuity, thin thickness and good uniformity.
Drawings
Fig. 1 is a transmission electron image and a dark field image of a gate manufactured by using a stacked structure of an oxide layer and titanium nitride in a conventional 38SF (38Super Flash);
FIG. 2 is a schematic diagram of a conventional discontinuous growth mechanism of a titanium nitride film;
FIG. 3 is a flow chart of a first embodiment of the surface treatment method of the present invention;
FIG. 4 is a schematic diagram showing the mechanism of continuous growth of the titanium nitride film according to the present invention;
FIG. 5 is a flowchart of a second embodiment of the surface treatment method of the present invention;
fig. 6 is a transmission electron image and a dark field image of a gate electrode manufactured by using a 38SF stacked structure of an oxide layer + titanium nitride after the surface treatment method of the present invention is adopted.
Detailed Description
Embodiments of the present invention are described below with reference to the accompanying drawings, which are intended to illustrate general characteristics of methods, structures and/or materials used in certain exemplary embodiments of the present invention, and to supplement the description in the specification. The drawings of the present invention, however, are not to scale and may not accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the present invention.
Other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. In the following description, specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced or applied in different embodiments, and the details may be based on different viewpoints and applications, and may be widely spread and replaced by those skilled in the art without departing from the spirit of the present invention.
It should be noted that the features of the above embodiments and examples may be combined with each other without conflict. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
Example one
This example proposes treating the surface of silicon dioxide with a solution containing a strong oxidizing agent, forming a dense passivation layer of SiOx on the surface, thus preventing the transition of the oxygen element from the silicon dioxide layer into TIN, thus ensuring the continuity of TIN growth.
Specifically, the surface treatment method for improving the continuity of the TiN film according to this embodiment, as shown in fig. 3, includes the following steps:
step S1, growing a silicon dioxide layer on the silicon substrate;
step S2, processing the surface of the silicon dioxide layer by using a solution containing a strong oxidant;
and step S3, growing a TiN film on the surface of the processed silicon dioxide layer.
In this embodiment, the strong oxidizing property of the solution is utilized to make the unsaturated-OH bonds on the surface of the silicon dioxide act as stable Si-O-Si bridges, the mechanism of the film growth is shown in fig. 4, a dense passivation layer of SiOx is formed on the surface of the silicon dioxide layer, and oxygen is prevented from jumping from the silicon dioxide to TiN, so as to ensure the continuity of TiN growth, and finally, the prepared TiN film has good continuity, thin thickness and good uniformity.
Example two
On the basis of the first embodiment, the present embodiment further describes each step of the surface treatment method.
Specifically, the surface treatment method for improving the continuity of the TiN film according to this embodiment, as shown in fig. 5, includes the following steps:
step S1, growing a silicon dioxide layer on the silicon substrate by using low-temperature CVD plasma;
preferably, the growth temperature of the silicon dioxide layer is 50-100 ℃, and more preferably, the growth temperature is 60 ℃;
step S2, processing the surface of the silicon dioxide layer with SC1 solution (first standard solution), and forming a dense passivation layer of SiOx on the surface of the silicon dioxide layer; the SC1 solution comprises the component H 2 O 2 /NH 3 ·H 2 O；
And step S3, growing a TiN film on the surface of the treated silicon dioxide layer by adopting a furnace tube process.
The surface treatment method of this example was used to test and verify that the grown titanium nitride film had improved continuity in 38SF, as shown in fig. 6.
In addition to the second embodiment, a person skilled in the art may also grow the silicon dioxide layer by other means, such as thermal oxidation, and similarly, may also perform surface treatment by using a solution containing other strong oxidizing agents, as long as a dense passivation layer of SiOx can be formed on the surface of the silicon dioxide layer.
The present invention has been described in detail with reference to the specific embodiments, which are merely preferred embodiments of the present invention, and the present invention is not limited to the above embodiments. Equivalent substitutions and modifications of the silicon dioxide layer growth, the composition of the strong oxidizing agent contained in the solution, and the like, by those skilled in the art, without departing from the principles of the present invention, should be considered to be within the scope of the protection of the present invention.
Claims (7)
1. A surface treatment method for improving continuity of a TiN film is characterized by comprising the following steps:
step S1, growing a silicon dioxide layer on the silicon substrate;
step S2, processing the surface of the silicon dioxide layer by using a solution containing a strong oxidant to enable unsaturated-OH bonds on the surface of the silicon dioxide to act as stable Si-O-Si bridge bonds;
and step S3, growing a TiN film on the surface of the processed silicon dioxide layer.
2. The surface treatment method for improving the continuity of a TiN thin film according to claim 1, wherein in step S1, a silicon dioxide layer is grown by CVD plasma.
3. The surface treatment method for improving the continuity of a TiN thin film according to claim 1, wherein in step S2, the surface of the silicon dioxide layer is treated with SC1 solution.
4. The method as claimed in claim 1, wherein in step S3, the TiN film is grown in a furnace tube.
5. The surface treatment method for improving the continuity of a TiN thin film according to claim 1, wherein in step S2, the surface of the silicon dioxide layer is treated to form a dense passivation layer.
6. The surface treatment method for improving continuity of a TiN thin film according to claim 2, wherein the growth temperature of the silicon dioxide layer is 50 ℃ to 100 ℃.
7. The method of claim 6, wherein the growth temperature of the silicon dioxide layer is 60 ℃.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025066A (en) * | 2016-06-02 | 2016-10-12 | 河北大学 | Silicon dioxide tunnel junction based resistive random access memory and preparation method therefor |
| CN108597983A (en) * | 2017-03-08 | 2018-09-28 | 朗姆研究公司 | Utilize catalyst control selective deposition silicon nitride on silica |
| CN108807165A (en) * | 2018-06-14 | 2018-11-13 | 上海华力集成电路制造有限公司 | The manufacturing method of oxide layer |
| CN110556292A (en) * | 2018-05-30 | 2019-12-10 | 台湾积体电路制造股份有限公司 | Method for semiconductor processing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001291720A (en) * | 2000-04-05 | 2001-10-19 | Hitachi Ltd | Semiconductor integrated circuit device and its manufacturing method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025066A (en) * | 2016-06-02 | 2016-10-12 | 河北大学 | Silicon dioxide tunnel junction based resistive random access memory and preparation method therefor |
| CN108597983A (en) * | 2017-03-08 | 2018-09-28 | 朗姆研究公司 | Utilize catalyst control selective deposition silicon nitride on silica |
| CN110556292A (en) * | 2018-05-30 | 2019-12-10 | 台湾积体电路制造股份有限公司 | Method for semiconductor processing |
| CN108807165A (en) * | 2018-06-14 | 2018-11-13 | 上海华力集成电路制造有限公司 | The manufacturing method of oxide layer |
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