CN112034676B - Pretreatment method of pixel graph - Google Patents
Pretreatment method of pixel graph Download PDFInfo
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- CN112034676B CN112034676B CN202011026644.XA CN202011026644A CN112034676B CN 112034676 B CN112034676 B CN 112034676B CN 202011026644 A CN202011026644 A CN 202011026644A CN 112034676 B CN112034676 B CN 112034676B
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- 238000002203 pretreatment Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000007781 pre-processing Methods 0.000 claims abstract description 26
- 230000003321 amplification Effects 0.000 claims description 52
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 52
- 238000012545 processing Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 18
- 230000009467 reduction Effects 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
The invention provides a preprocessing method of a pixel graph, which comprises the following steps: inputting a layout to be tested of a pixel graph; judging whether the hypotenuse of the layout to be tested has a bulge or not; if the bevel edge of the layout to be tested has a bulge, the layout to be tested is subjected to enlarging and shrinking treatment so as to remove the bulge of the bevel edge. In the pixel graph pretreatment method provided by the invention, before OPC treatment is carried out on the layout to be tested, whether the bevel edge of the layout to be tested is provided with the bulge is judged, if so, the bulge is eliminated, the OPC treatment is not abnormal, and the graph after the OPC treatment reaches the standard.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a pretreatment method of a pixel graph.
Background
In the IC process manufacturing process, repeatedly arranged Pixel patterns play an important role, but in the OPC publishing process, some unfriendly designs are often found, notches exist on the bevel edges of the Pixel patterns, so that OPC correction abnormality can be caused, the industrial requirements of the Pixel patterns can not be met, and the yield is reduced. As shown in fig. 1, fig. 1 is an input layout pattern 100, which is also a Pixel pattern, and it can be seen that the input layout pattern 100 has a plurality of sloping sides 110 as can be seen from the shape of the input layout pattern 100. It is found that the hypotenuse 110 may have a smaller protrusion 111, for example, fig. 2. When the OPC processing is performed on the input layout pattern 100, an OPC processed pattern 200 is obtained, and as shown in fig. 3, fig. 3 is an OPC processed pattern, it is found that the OPC processed pattern 200 has a step 211 on the OPC processed pattern oblique side 210 corresponding to the oblique side 110 of the input layout pattern, and such pattern cannot meet the correction requirement. Therefore, it can be known that if a certain hypotenuse of the inputted layout pattern has a bump, such bump 111 will cause correction abnormality to the pattern after OPC processing, and the requirement of OPC correction cannot be met.
Disclosure of Invention
The invention aims to provide a pretreatment method of a pixel pattern, which can repair the bulge of the bevel edge of the pixel pattern, so that the bevel edge is smooth, and finally, the OPC treatment of the pixel pattern is free from abnormality.
In order to achieve the above object, the present invention provides a method for preprocessing a pixel pattern, for removing bumps of hypotenuse of the pixel pattern before OPC processing is performed on the layout of the pixel pattern, including:
inputting a layout to be tested of a pixel graph;
judging whether the hypotenuse of the layout to be tested has a bulge or not;
if the bevel edge of the layout to be tested has a bulge, the layout to be tested is subjected to enlarging and shrinking treatment so as to remove the bulge of the bevel edge.
Optionally, in the preprocessing method of the pixel graph, the layout to be tested is a polygon graph with a hypotenuse.
Optionally, in the method for preprocessing a pixel pattern, the method for judging whether the hypotenuse of the layout to be tested has a bump includes:
dividing a layout to be tested into a plurality of grids;
comparing the graph in each grid with a target image;
an inconsistent pattern is considered to be a bump if it is inconsistent with the target pattern and the inconsistent pattern is less than 5 nm.
Optionally, in the pixel graph preprocessing method, if the hypotenuse of the layout to be tested has no bulge, OPC processing is performed on the layout graph.
Optionally, in the method for preprocessing a pixel pattern, after performing amplification and reduction processing on the layout to be tested to remove the protrusion of the hypotenuse, the method for preprocessing a pixel pattern further includes: OPC processing is carried out on the layout graph.
Optionally, in the method for preprocessing a pixel pattern, the method for amplifying and shrinking the layout to be tested to remove the protrusion of the hypotenuse includes:
calculating scaling coefficients of the amplifying process and the shrinking process;
amplifying the layout to be tested according to the value of the amplification factor;
and performing reduction processing on the amplified layout to be tested according to the reduction multiple.
Optionally, in the preprocessing method for a pixel pattern, the method for calculating scaling coefficients of the zoom-in process and the zoom-out process includes:
selecting a sample from the layout to be tested with the bulge on the hypotenuse;
pre-amplifying the sample graph until the protrusion is eliminated to obtain a pre-amplified graph;
calculating an included angle between the bevel edge of the pre-amplification pattern and the midpoint of the bevel edge of the sample pattern;
calculating the length of the bevel edge of the pre-amplification graph and the included angle to obtain a scaling factor of the pre-amplification processing;
rounding the scaling factor of the pre-amplification treatment, and obtaining at least one alternative scaling factor by adding a value of layout precision to the rounded scaling factor of the pre-amplification treatment;
and amplifying the sample by using the alternative scaling factor and the rounded scaling factor of the pre-amplification treatment to obtain at least one amplified graph, and selecting a graph with the optimal de-protrusion effect from the at least one amplified graph, wherein the corresponding alternative scaling factor or the rounded scaling factor of the pre-amplification treatment is used as the scaling factor.
Optionally, in the method for preprocessing a pixel pattern, the method for calculating a scaling factor of the pre-amplification processing by using the length of the oblique side of the pre-amplification pattern and the included angle includes:
wherein: h is the length of the bevel edge of the pre-amplification pattern, θ is the included angle between the bevel edge of the pre-amplification pattern and the midpoint of the bevel edge of the sample pattern, and ε is the scaling factor of the pre-amplification process.
Optionally, in the preprocessing method of the pixel graph, the maximum value of the candidate scaling factor is a value obtained by adding 1 to the rounded preprocessing scaling factor.
Optionally, in the preprocessing method of the pixel graph, the value of the layout precision is 0.01 nm-1 nm.
In the pixel graph preprocessing method provided by the invention, the layout to be tested is a pixel image, before OPC processing is carried out on the layout to be tested, whether the bevel edge of the layout to be tested is provided with the bulge or not is judged, if the bulge is provided with the bulge, the bulge is eliminated, the OPC processing is not abnormal, and the graph after the OPC processing reaches the standard.
Drawings
FIGS. 1 and 2 are prior art input layout figures;
FIG. 3 is a graph after OPC processing in the prior art;
FIG. 4 is a flow chart of a method of preprocessing a pixel pattern in accordance with an embodiment of the present invention;
FIGS. 5 and 6 are graphs of a layout to be tested according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a method for calculating a scaling factor for a pre-amplification process according to an embodiment of the present invention;
in the figure: 100-input layout graph, 110-bevel edge, 111-bump, 200-OPC processed graph, 210-OPC processed graph bevel edge, 211-step, 300-to-be-tested layout, 310-bevel edge, 311-bump, 400-sample, 410-sample graph bevel edge, 411-midpoint, 500-pre-amplified graph, 510-pre-amplified graph bevel edge.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the following, the terms "first," "second," and the like are used to distinguish between similar elements and are not necessarily used to describe a particular order or chronological order. It is to be understood that such terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method.
Referring to fig. 4, the present invention provides a method for preprocessing a pixel pattern, for removing bumps of hypotenuse of the pixel pattern before OPC processing is performed on the layout of the pixel pattern, including:
s11: inputting a layout to be tested of a pixel graph;
s12: judging whether the hypotenuse of the layout to be tested has a bulge or not;
s13: if the bevel edge of the layout to be tested has a bulge, the layout to be tested is subjected to enlarging and shrinking treatment so as to remove the bulge of the bevel edge.
In the embodiment of the invention, the layout to be tested is a polygon with a hypotenuse. As shown in fig. 5, the layout 300 to be tested has a plurality of beveled edges 310, e.g., the present embodiment has 8 beveled edges 310, and in other embodiments of the present invention, there may be other numbers of beveled edges. Referring to FIG. 6, one of the beveled edges 310 has a protrusion 311 thereon, and an object of an embodiment of the present invention is to remove the protrusion 311 prior to OPC processing.
Further, the method for judging whether the bevel edge of the layout to be tested has the bulge or not comprises the following steps: dividing a layout to be tested into a plurality of grids; comparing the graph in each grid with a target image; an inconsistent pattern is considered to be a bump if it is inconsistent with the target pattern and the inconsistent pattern is less than 5 nm. Firstly, dividing a layout to be tested into a plurality of grids, wherein each grid is internally provided with a part of layout graph to be tested. The comparison is carried out with the target pattern, namely the pattern with no bulge on the hypotenuse, so that whether the hypotenuse of the to-be-tested layout is provided with the bulge or not can be found, the specific comparison method can be that the target pattern is also rasterized, the target pattern and the pattern of the to-be-tested layout are respectively converted into gray values, each grid of the target pattern is compared with the corresponding grid of the to-be-tested layout, if the gray values of a certain position in a certain grid are inconsistent, the pattern at the position is considered to be inconsistent, and if the inconsistent pattern is smaller than 5nm, the pattern is considered to be the bulge of the hypotenuse.
Preferably, if the hypotenuse of the layout to be tested has no bulge, OPC processing is carried out on the layout graph. And the layout to be tested is subjected to amplification and reduction treatment so as to remove the bulge of the bevel edge, and then OPC treatment can be performed on the layout graph.
Further, the method for enlarging and reducing the layout to be tested to remove the bulge of the bevel edge comprises the following steps: calculating scaling coefficients of the amplifying process and the shrinking process; amplifying the layout to be tested according to the value of the amplification factor; and performing reduction processing on the amplified layout to be tested according to the reduction multiple.
Further, the method for calculating the scaling factor of the enlargement processing and the reduction processing includes: selecting a sample from the layout to be tested with the bulge on the hypotenuse; pre-amplifying the sample graph until the protrusion is eliminated to obtain a pre-amplified graph; calculating an included angle between the bevel edge of the pre-amplification pattern and the midpoint of the bevel edge of the sample pattern; calculating the length of the bevel edge of the pre-amplification graph and the included angle to obtain a scaling factor of the pre-amplification processing; rounding the scaling factor of the pre-amplification treatment, and obtaining at least one alternative scaling factor by adding a value of layout precision to the rounded scaling factor of the pre-amplification treatment; and amplifying the sample by using the alternative scaling factor and the rounded scaling factor of the pre-amplification treatment to obtain at least one amplified graph, and selecting a graph with the optimal de-protrusion effect from the at least one amplified graph, wherein the corresponding alternative scaling factor or the rounded scaling factor of the pre-amplification treatment is used as the scaling factor. Specifically, the layout to be tested is amplified by using the alternative scaling factor, and the amplified optimal alternative scaling factor of the layout is taken as the actual scaling factor. The layout to be tested in the embodiment of the invention may have a plurality of bumps, and the hypotenuses of the layout to be tested may have bumps, so that a scaling factor capable of eliminating the bumps needs to be found, so that other layouts to be tested can be scaled by directly using the scaling factor to eliminate the bumps. And the calculation of the scaling factor can be performed by finding one layout to be tested as a sample to perform pre-amplification treatment so as to calculate a suitable alternative scaling factor. Specifically, an initial amplification value can be selected for one time for the sample, and the selected amplification value can be calculated by the quotient of the photoetching process wavelength and the optical aperture, specifically: value = photolithographic process wavelength/optical aperture, the optical aperture is a Value of the optical factor plus 1, and the optical factor is known and varies with process variations. If the initial amplification value is used for amplifying the layout to be tested, the bevel edge still has the bulge, and the amplification value is increased by a certain amplitude on the basis of the initial amplification value until the amplified bevel edge of the layout to be tested has no bulge. An alternative scaling factor for the sample may be calculated at this time. Specifically, the calculation can be performed by the side length of the amplified hypotenuse and the included angle between the amplified hypotenuse and the midpoint of the original hypotenuse.
Referring to fig. 7, specifically, a pre-amplified pattern 500 is a pre-amplified pattern of a sample 400, and a bevel 410 of the sample pattern has a bump. The bump is removed after the step-by-step magnification to obtain the pre-magnified graphic 500. The method for calculating the scaling factor of the pre-amplification processing by utilizing the length of the pre-amplification graphic hypotenuse and the included angle comprises the following steps:
wherein: h is the length of the pre-amp pattern hypotenuse 510, θ is the angle between the pre-amp pattern hypotenuse 510 and the midpoint 411 of the sample pattern hypotenuse 410, ε is the scaling factor of the pre-amp process. If epsilon is a non-integer, when the alternative scaling factor is needed, the integer value of epsilon is needed to be taken, and then the layout precision is added to the integer value to obtain the alternative scaling factor.
Further, the maximum value of the alternative scaling factor is a value obtained by adding 1 to the rounded pre-amplification processing scaling factor. The number of the alternative scaling factors is at least one, and the alternative scaling factors are pre-amplification processing scaling factors or the pre-amplification processing scaling factors plus at least one layout precision. After the calculated alternative scaling factor, some deviation may exist due to the structure of the layout, so that the alternative scaling factor needs to be judged to select an optimal alternative scaling factor, for example, if the obtained pre-amplification processing scaling factor is 27.14, an integer, namely 27, is selected. Amplifying the layout by 27nm, and then amplifying the sample by referring to the precision of the layout, wherein the range of the precision of the layout is as follows: if the precision (the size of the grid) of the layout is 0.5nm, the sample is required to be amplified by 27.5nm and 28nm respectively, and one pattern with the optimal projection removed is selected from the patterns amplified by 27nm, 27.5nm and 28nm, and the corresponding alternative scaling factor is the scaling factor. The protrusion of the bevel edge can be removed by using the scaling coefficient to carry out the enlarging and reducing treatment on other layouts to be tested.
In the embodiment of the invention, the amplification processing and the reduction processing of the layout to be processed are the same in multiple. If one pattern is provided with a bulge, a gap is arranged between the bulge and the original bevel edge, the whole pattern is amplified in all directions, the gap is necessarily filled, the bulge can be removed, and finally, the amplified pattern is reduced by the same multiple, and the pattern with the original pattern size can be obtained.
In summary, in the pixel graph preprocessing method provided by the embodiment of the invention, before OPC processing is performed on a layout to be tested, whether the bevel edge of the layout to be tested has a bulge or not is judged, if so, the bulge is eliminated, the OPC processing is not abnormal, and the graph after the OPC processing reaches the standard.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (8)
1. The preprocessing method for the pixel graph is used for removing the bulge of the bevel edge of the pixel graph before OPC processing is carried out on the layout of the pixel graph, and is characterized by comprising the following steps:
inputting a layout to be tested of a pixel graph;
judging whether the hypotenuse of the layout to be tested has a bulge or not;
if the bevel edge of the layout to be tested has a bulge, performing amplification and reduction treatment on the layout to be tested to remove the bulge of the bevel edge;
the method for enlarging and reducing the layout to be tested to remove the bulge of the bevel edge comprises the following steps:
calculating scaling coefficients of the amplifying process and the shrinking process;
amplifying the layout to be tested according to the value of the amplification factor;
performing reduction processing on the amplified layout to be tested according to the reduction multiple;
the method for calculating the scaling factors of the enlargement processing and the reduction processing comprises the following steps:
selecting a sample from the layout to be tested with the bulge on the hypotenuse;
pre-amplifying the sample graph until the protrusion is eliminated to obtain a pre-amplified graph;
calculating an included angle between the bevel edge of the pre-amplification pattern and the midpoint of the bevel edge of the sample pattern;
calculating the length of the bevel edge of the pre-amplification graph and the included angle to obtain a scaling factor of the pre-amplification processing;
rounding the scaling factor of the pre-amplification treatment, and obtaining at least one alternative scaling factor by adding a value of layout precision to the rounded scaling factor of the pre-amplification treatment;
and amplifying the sample by using the alternative scaling factor and the rounded scaling factor of the pre-amplification treatment to obtain at least one amplified graph, and selecting a graph with the optimal de-protrusion effect from the at least one amplified graph, wherein the corresponding alternative scaling factor or the rounded scaling factor of the pre-amplification treatment is used as the scaling factor.
2. The method for preprocessing a pixel pattern according to claim 1, wherein the layout to be tested is a polygonal pattern having hypotenuse.
3. The method for preprocessing a pixel pattern according to claim 1, wherein the method for judging whether the hypotenuse of the layout to be tested has a bump or not comprises:
dividing a layout to be tested into a plurality of grids;
comparing the graph in each grid with a target image;
an inconsistent pattern is considered to be a bump if it is inconsistent with the target pattern and the inconsistent pattern is less than 5 nm.
4. A method of pre-processing a pattern of pixels as claimed in claim 1, wherein the pattern of the layout to be tested is OPC processed if the hypotenuse of the layout is not convex.
5. The method for preprocessing a pixel pattern according to claim 1, wherein after performing enlargement and reduction processing on a layout to be tested to remove bumps of a hypotenuse, the method for preprocessing a pixel pattern further comprises: OPC processing is carried out on the layout graph.
6. The method of preprocessing a pixel pattern as claimed in claim 1, wherein the method of calculating a scaling factor of the pre-amplification process using the length of the hypotenuse of the pre-amplification pattern and said included angle comprises:
wherein: h is the length of the bevel edge of the pre-amplification pattern, θ is the included angle between the bevel edge of the pre-amplification pattern and the midpoint of the bevel edge of the sample pattern, and ε is the scaling factor of the pre-amplification process.
7. The method of preprocessing a pixel pattern according to claim 1, wherein the maximum value of said alternative scaling factor is a rounded value of the pre-amplification processing scaling factor plus 1.
8. The method for preprocessing a pixel pattern according to claim 1, wherein the value of the layout accuracy is 0.01nm to 1nm.
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