CN112030126A - Method for regulating and controlling preferred orientation of vanadium film - Google Patents
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- 229910052720 vanadium Inorganic materials 0.000 title claims abstract description 101
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 19
- 230000001276 controlling effect Effects 0.000 title claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 49
- 238000004544 sputter deposition Methods 0.000 claims abstract description 45
- 230000008021 deposition Effects 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
Abstract
The invention relates to a method for regulating and controlling the preferred orientation of a vanadium film, which adopts a non-equilibrium magnetron sputtering method to respectively obtain metal vanadium films with the orientations of <110>, <211>, <111> by regulating and controlling the conditions of deposition air pressure and sputtering power. The method is simple to operate, the metal vanadium film with different preferred orientations can be obtained by regulating and controlling the deposition air pressure and the sputtering power by adopting the unbalanced magnetron sputtering method, the method has good repeatability, and the method has important significance for preparing, developing and applying the metal vanadium film with specific preferred orientations.
Description
Technical Field
The invention belongs to the technical field of film materials, and particularly relates to a method for regulating and controlling preferred orientation of a vanadium film.
Background
The crystal structure of the material determines its properties, which are decisively influenced by the orientation of the crystal growth in the metal thin-film material. For the vanadium film, the preferred orientation has great influence on the oxidation resistance, the mechanical property and the electrical property of the vanadium film. Meanwhile, in the high-pressure phase transition research of vanadium, researchers judge that the vanadium has undergone phase transition by observing the generation of V (100) and V (210) diffraction rings of rhombohedral phases near V (110) and V (211) diffraction rings of a body-centered cubic phase of the vanadium in a synchronous X-ray diffraction experiment. The vanadium film with the preferred orientation of <110> or <211> as a 'diffraction target' in the vanadium high-pressure phase change research can enable diffraction signals in a synchronous X-ray diffraction experiment to be observed more easily, and is beneficial to the development of the vanadium high-pressure phase change research work. A simple and practical method is sought for accurately controlling the preferred orientation of the vanadium film, and the method is beneficial to the application of the oriented vanadium film in various specific fields.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for regulating and controlling the preferred orientation of a vanadium film, which is easy to operate and aims at overcoming the defects in the prior art.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
the method for regulating and controlling the preferred orientation of the vanadium film adopts a non-equilibrium magnetron sputtering method, and obtains the metal vanadium films with the orientations of <110>, <211>, <111> respectively by regulating and controlling the conditions of deposition pressure and sputtering power.
The method for regulating and controlling the preferred orientation of the vanadium film comprises the following specific steps:
1) respectively installing vanadium targets with the same specification on two opposite target seats in a deposition cavity of unbalanced magnetron sputtering equipment, and adjusting the distance between the two targets to be 10-14 cm;
2) placing the cleaned substrate in the center of the sample stage, and vacuumizing the deposition chamber to the background vacuum (2 × 10)- 4Pa)；
3) Introducing argon into the deposition chamber, wherein the flow of the argon is 10-40 sccm, the deposition pressure is adjusted to be 0.5-2 Pa, starting a target power supply, rotating the sample table at the speed of 10r/min, adjusting the sputtering power to be 40-120W, and sputtering and depositing an oriented metal vanadium film on the surface of the substrate in a direct-current magnetron sputtering mode;
when the sputtering power is less than or equal to 60W, a metal vanadium film with the preferred orientation of complete <110> is obtained on the surface of the matrix;
sputtering power is in the range of 80W-100W, and when deposition pressure is more than 1Pa, a metal vanadium film with preferred orientation of <110> is obtained on the surface of the substrate;
sputtering power is in the range of 80W-100W, and when deposition pressure is less than or equal to 1Pa, a metal vanadium film with preferred orientation of <211> is obtained on the surface of the substrate;
when the sputtering power is more than 100W and the deposition pressure is more than or equal to 1Pa, the metal vanadium film with the preferred orientation of <111> is obtained on the surface of the substrate.
According to the scheme, the purity of the vanadium target material in the step 1) is more than 99.95% (mass percentage).
According to the scheme, the matrix in the step 2) is selected from a Si substrate, a SiC substrate, a glass substrate and an alumina substrate.
According to the scheme, the purity of the argon in the step 3) is more than 99.999 percent (volume percentage).
According to the scheme, the sputtering time in the step 3) is 0.5-12 h.
The invention also comprises the oriented metal vanadium film prepared by the method, wherein the metal vanadium film has <110> or <211> or <111> orientation. The study on the mechanical properties and superconductivity of vanadium metal due to high-voltage phase transition is beneficial to those skilled in the art to study the characteristics of materials under extreme conditions and search for new superconducting materials. The prepared metal vanadium film with different preferred orientations and high orientation degree can improve the precision and the intensity of diffraction signals of a synchrotron radiation diffraction experiment for researching the high-pressure phase change characteristics of the metal vanadium.
Through a series of experiments, the applicant discovers that when a metal vanadium film is prepared by adopting an unbalanced magnetron sputtering method, the orientation of the obtained vanadium film is influenced by deposition pressure and sputtering power, a rule chart summarizing the influence of the obtained deposition pressure and sputtering power on the orientation of the vanadium film is shown in figure 1, and when the sputtering power is less than or equal to 60W, the metal vanadium film with the preferred orientation of <110> is obtained on the surface of a substrate; the radiation power is in the range of 80W-100W, and when the deposition air pressure is more than 1Pa, a metal vanadium film with preferred orientation of <110> is obtained on the surface of the substrate; sputtering power is in the range of 80W-100W, and when deposition pressure is less than or equal to 1Pa, a metal vanadium film with preferred orientation of <211> is obtained on the surface of the substrate; when the sputtering power is more than 100W and the deposition pressure is more than or equal to 1Pa, the metal vanadium film with the preferred orientation of <111> is obtained on the surface of the substrate.
The invention has the beneficial effects that: the method is simple to operate, the metal vanadium film with different preferred orientations can be obtained by regulating and controlling the deposition air pressure and the sputtering power by adopting the unbalanced magnetron sputtering method, the method has good repeatability, and the method has important significance for preparing, developing and applying the metal vanadium film with specific preferred orientations.
Drawings
FIG. 1 is a diagram showing the influence of deposition pressure and sputtering power on the orientation of a vanadium thin film according to the present invention;
FIG. 2 is an XRD spectrum of the vanadium thin film obtained in examples 1 to 3;
FIG. 3 is a surface SEM image of the vanadium thin film obtained in examples 1 to 3;
FIG. 4 is an XRD spectrum of the vanadium thin film obtained in example 4;
FIG. 5 is an XRD spectrum of the vanadium thin film obtained in comparative example 1;
FIG. 6 is an SEM photograph of the vanadium thin film obtained in comparative example 1;
FIG. 7 is an XRD pattern of the vanadium thin film obtained in comparative example 2.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention is further described in detail below with reference to the accompanying drawings.
Example 1
A method for preparing a vanadium metal film comprises the following specific steps:
1) mounting vanadium targets (the purity of the vanadium target is 99.95%) with the same specification (dia50 multiplied by 4.5mm) on two oppositely arranged target seats in a deposition cavity of unbalanced magnetron sputtering equipment, and adjusting the distance between the two targets to be 13 cm;
2) the substrate is a single crystal Si (111) substrate, and is placed in acetone and alcohol for ultrasonic cleaning, then is washed by deionized water, and finally is dried by nitrogen;
3) putting the cleaned Si (111) into the center of a sample table in a non-equilibrium magnetron sputtering deposition cavity, closing a hatch door, and vacuumizing the deposition cavity to 2 multiplied by 10-4Pa；
4) Introducing argon (with the purity of 99.999%) into the deposition chamber, adjusting the flow of the argon to be 20sccm, and setting the deposition pressure to be 1.5 Pa;
5) setting the sputtering power to be 40W, turning on a sputtering power supply, enabling the sample table to rotate at the speed of 10r/min, and starting sputtering;
6) and (3) after 1h, closing the sputtering power supply, and stopping introducing argon, namely depositing on the surface of the Si (111) to obtain the vanadium film with the preferred orientation of <110 >.
The XRD pattern of the vanadium film obtained in this example is shown in FIG. 2, and only the diffraction peak of the V (110) crystal plane appears in example 1, which shows that the vanadium film is completely <110> preferred orientation.
The SEM image of the surface of the vanadium film obtained in this example is shown in fig. 3(a), and the particles on the surface of the film are in the shape of stacked triangular prisms, which is a typical <110> preferred orientation morphology, and is consistent with the XRD data.
Example 2
A method for preparing a vanadium metal thin film, which adopts the same substrate, the same target distance and the same background vacuum as those of the embodiment 1, and is characterized in that:
the deposition pressure was set to 0.5Pa, the sputtering power was set to 80W, and the sputtering time was maintained for 1 h.
The XRD pattern of the vanadium thin film obtained in the example is shown in figure 2, diffraction peaks of a V (110) plane and a V (211) plane appear in example 2, and the texture factor of each crystal plane is calculated through the intensity of the two diffraction peaks to obtain Tc(110)＝1.2，Tc(211)When the film was found to be 5.8, the film was found to be<211>Preferred orientation.
The SEM image of the surface of the vanadium film obtained in the embodiment is shown in FIG. 3(b), and the particles on the surface of the film are in a flat right-angle tetrahedron shape, which is a typical <211> preferred orientation morphology and is consistent with the result of XRD data.
Example 3
A method for preparing a vanadium metal thin film, which adopts the same substrate, the same target distance and the same background vacuum as those of the embodiment 1, and is characterized in that:
the deposition pressure was set to 1.5Pa, the sputtering power was set to 120W, and the sputtering time was maintained for 1 h.
The XRD pattern of the vanadium thin film obtained in the example is shown in figure 2, diffraction peaks of a V (110) plane and a V (222) plane appear in example 3, and the texture factor of each crystal plane is calculated through the intensity of the two diffraction peaks to obtain Tc(110)＝0.9，Tc(222)6.1, the vanadium film is<111>Preferred orientation.
The SEM image of the surface of the vanadium film obtained in the embodiment is shown in figure 3(c), and the particles on the surface of the film are in a regular tetrahedron shape, which is a typical <111> preferred orientation morphology and is consistent with the result of XRD data.
Example 4
A method for preparing a vanadium metal thin film, which adopts the same substrate, the same target distance and the same background vacuum as those of the embodiment 1, and is characterized in that:
the deposition pressure was set at 2Pa, the sputtering power was set at 80W, and the sputtering time was maintained for 1 h.
The XRD pattern of the vanadium thin film obtained in the example is shown in figure 4, diffraction peaks of a V (110) plane and a V (211) plane appear in the example 4, and the texture factor of each crystal plane is calculated through the intensity of the two diffraction peaks to obtain Tc(110)＝5.3，Tc(222)1.7, the vanadium film was found to be<110>Preferred orientation.
Comparative example 1
The method for preparing the vanadium metal film by adopting the balanced magnetron sputtering equipment comprises the following specific steps:
1) vanadium targets (the purity of the vanadium target is 99.95%) with the same specification (dia50 multiplied by 4.5mm) are arranged on two oppositely arranged target seats in a deposition cavity of the balanced magnetron sputtering equipment;
2) the substrate is a single crystal Si (100) substrate, and is placed in acetone and alcohol for ultrasonic cleaning, then is washed by deionized water, and finally is dried by nitrogen;
3) putting the cleaned Si (100) on a sample table in a balanced magnetron sputtering deposition cavity, closing a hatch, and vacuumizing the deposition cavity to 2 x 10-4Pa；
4) Introducing argon (with the purity of 99.999%) into a deposition chamber, adjusting the flow of the argon to be 20sccm, and setting the deposition pressure to be 1 Pa;
5) setting the sputtering power to be 60W, turning on a sputtering power supply, enabling the sample table to autorotate at the speed of 10r/min, and starting sputtering;
6) and (3) after 1h, closing the sputtering power supply, stopping introducing argon, and depositing on the surface of the Si (100) to obtain the vanadium film.
The XRD pattern of the vanadium film obtained in the comparative example is shown in figure 5, and the result shows that only weak V (110) plane diffraction peaks are detected, which indicates that the vanadium film prepared in the comparative example 1 is an amorphous vanadium film.
The SEM image of the surface of the vanadium film obtained in the comparative example is shown in FIG. 6, and the film shows that the particles have irregular shapes and poor crystallinity. The result shows that the vanadium particles incident to the surface of the substrate in the preparation process of the balance type magnetron sputtering device tend to form amorphous vanadium, and the requirement of high orientation of application requirements is not met.
Comparative example 2
Keeping the deposition pressure and the sputtering power constant in the sputtering process, and respectively preparing the vanadium film under the conditions that the target spacing is 10cm, 12cm and 14 cm:
1) respectively mounting vanadium targets (the purity of the vanadium targets is 99.95%) with the specification of dia50 multiplied by 4.5mm on two oppositely arranged target seats in a deposition cavity of the unbalanced magnetron sputtering equipment;
2) the substrate is a single crystal Si (111) substrate, and is placed in acetone and alcohol for ultrasonic cleaning, then is washed by deionized water, and finally is dried by nitrogen;
3) putting the cleaned Si (111) on a sample table in a non-equilibrium magnetron sputtering deposition cavity, closing a hatch, and vacuumizing the deposition cavity to 2 x 10-4Pa；
4) Introducing argon (with the purity of 99.999%) into the deposition chamber, adjusting the flow of the argon to be 20sccm, and setting the deposition pressure to be 0.5 Pa;
5) setting the sputtering power to be 60W, turning on a sputtering power supply, enabling the sample table to autorotate at the speed of 10r/min, and starting sputtering;
6) and (3) after 1h, closing the sputtering power supply, and stopping introducing argon, namely depositing on the surface of the Si (111) to obtain the vanadium film.
The XRD pattern of the vanadium film obtained in the comparative example is shown in figure 7, and the result shows that the vanadium films deposited under three groups of different target spacings only have a V (110) crystal plane diffraction peak, and the vanadium film has the preferred orientation of <110>, which indicates that the preferred orientation of the vanadium film cannot be changed by adjusting the target spacing.
The upper and lower limit values and interval values of all the parameters listed in the invention can realize the invention, and the embodiments are not listed.
Claims (7)
1. A method for regulating and controlling the preferred orientation of a vanadium film is characterized in that a non-equilibrium magnetron sputtering method is adopted, and conditions of deposition pressure and sputtering power are regulated and controlled to respectively obtain metal vanadium films with the orientations of <110>, <211>, <111 >.
2. The method for regulating and controlling the preferred orientation of the vanadium film according to claim 1, comprising the following specific steps:
1) respectively installing vanadium targets with the same specification on two opposite target seats in a deposition cavity of unbalanced magnetron sputtering equipment, and adjusting the distance between the two targets to be 10-14 cm;
2) placing the cleaned matrix in the center of a sample table, and vacuumizing the deposition cavity to background vacuum;
3) introducing argon into the deposition chamber, wherein the flow of the argon is 10-40 sccm, the deposition pressure is adjusted to be 0.5-2 Pa, starting a target power supply, rotating the sample table at the speed of 10r/min, adjusting the sputtering power to be 40-120W, and sputtering and depositing an oriented metal vanadium film on the surface of the substrate in a direct-current magnetron sputtering mode;
when the sputtering power is less than or equal to 60W, a metal vanadium film with the preferred orientation of complete <110> is obtained on the surface of the matrix;
sputtering power is in the range of 80W-100W, and when deposition pressure is more than 1Pa, a metal vanadium film with preferred orientation of <110> is obtained on the surface of the substrate;
sputtering power is in the range of 80W-100W, and when deposition pressure is less than or equal to 1Pa, a metal vanadium film with preferred orientation of <211> is obtained on the surface of the substrate;
when the sputtering power is more than 100W and the deposition pressure is more than or equal to 1Pa, the metal vanadium film with the preferred orientation of <111> is obtained on the surface of the substrate.
3. The method for regulating and controlling the preferred orientation of the vanadium thin film according to claim 2, wherein the purity of the vanadium target in the step 1) is more than 99.95%.
4. The method for regulating and controlling the preferred orientation of the vanadium thin film according to claim 2, wherein the substrate in step 2) is selected from a Si substrate, a SiC substrate, a glass substrate, and an alumina substrate.
5. The method for regulating and controlling the preferred orientation of the vanadium thin film according to claim 2, wherein the argon purity in the step 3) is more than 99.999%.
6. The method for regulating and controlling the preferred orientation of the vanadium thin film according to claim 2, wherein the sputtering time in the step 3) is 0.5-12 h.
7. An oriented metal vanadium film prepared by the method for regulating the preferred orientation of the vanadium film according to any one of claims 1 to 6, wherein the metal vanadium film has a <110> or <211> or <111> orientation.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014170784A (en) * | 2013-03-01 | 2014-09-18 | Yuutekku:Kk | Orientation substrate, process of manufacturing orientation film substrate, sputtering apparatus, and multiple chamber device |
| CN110643965A (en) * | 2019-11-06 | 2020-01-03 | 武汉理工大学 | Preparation method of high-crystallinity vanadium film |
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- 2020-08-28 CN CN202010884112.3A patent/CN112030126A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014170784A (en) * | 2013-03-01 | 2014-09-18 | Yuutekku:Kk | Orientation substrate, process of manufacturing orientation film substrate, sputtering apparatus, and multiple chamber device |
| CN110643965A (en) * | 2019-11-06 | 2020-01-03 | 武汉理工大学 | Preparation method of high-crystallinity vanadium film |
Non-Patent Citations (2)
| Title |
|---|
| SONG ZHANG ET AL.: "Microstructure and Oxidation Behavior of Metal V Films Deposited by Magnetron Sputtering", 《MATERAIALS》 * |
| 汪婷婷: "非平衡磁控溅射法制备金属V薄膜", 《中国优秀博硕士学位论文全文数据库(硕士) 工程科技I辑》 * |
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