CN102286741A - Method for preparing cadmium telluride film - Google Patents
Method for preparing cadmium telluride film Download PDFInfo
- Publication number
- CN102286741A CN102286741A CN201110257959XA CN201110257959A CN102286741A CN 102286741 A CN102286741 A CN 102286741A CN 201110257959X A CN201110257959X A CN 201110257959XA CN 201110257959 A CN201110257959 A CN 201110257959A CN 102286741 A CN102286741 A CN 102286741A
- Authority
- CN
- China
- Prior art keywords
- substrate
- powder source
- temperature
- heating
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for preparing cadmium telluride film, which belongs to the technical field of material plating. In the method, the distance from a cadmium telluride source to a substrate in a vacuum chamber of a near space sublimation device is controlled, the oxygen content in the vacuum chamber is controlled through regulating the air pressure of the vacuum chamber, and twice growth of the same phase crystal lattice of the cadmium telluride film is formed through twice heating, heat insulation and cooling processes carried out on the cadmium telluride source and the substrate at different vacuum degrees and temperatures, so the cadmium telluride film with large crystal grains and good tissue structures are formed. In addition, the appearance relying degree of the two growth modes on the substrate is greatly reduced through being compared with that of other growth modes, so the cadmium telluride film can be directly grown on the ordinary glass at low cost and high efficiency.
Description
Technical field
The present invention relates to a kind of Cadimium telluride thin film preparation method, belong to material coating technology field.
Background technology
Cadmium telluride (CdTe) is the important materials in the II-VI compounds of group, have two kinds of conduction types of n type and p type, and two kinds of mobility of charge carrier rates is all better, extensively applies to prepare electron device at present.Simultaneously, the CdTe film has the direct band gap structure, and edge energy is 1.45eV, just in time is positioned at the energy gap scope of desirable solar cell, its specific absorbance (to the light of wavelength less than ABSORPTION EDGE) is very big, makes the CdTe film become again and can obtain one of high efficiency desirable solar cell material.
At present the preparation method of Cadimium telluride thin film is many, and common have electrochemical deposition method, radio frequency sputtering method, vacuum vapor deposition method, spraying thermal decomposition method, a near space subliming method etc.The near space subliming method is simple because of equipment, and laboratory process extends to suitability for industrialized production easily, and therefore the CdTe film adopts this method preparation mostly at present.The primary process of near space sublimation method is that heating CdTe chemical source makes its distillation, is decomposed into Cd, Te
2Steam gas and rising, they run into colder substrate surface and sublimate and form the CdTe film subsequently.By parameters such as external gas atmosphere parameter and air pressure in the distance between change CdTe chemical source and substrate temperature, temperature head, chemical source and the substrate, the sediment chamber, the may command deposition is at 0.1～10um/min.
Understand according to the applicant, preparing relevant patent documentation report with Cadimium telluride thin film at present has: 1) Chinese patent of application number 200580028243.5 has been reported a kind of method of coated substrate under atmospheric pressure, this method under atmospheric pressure, repeatedly the semiconductor material of guiding evaporation condenses on the low-temperature substrate, this method has only provided the multi-lager semiconductor material that repeatedly condenses on substrate, be not the method that approaches preparation specially at cadmium telluride, and the semiconductor material layer of this method preparation does not have, and texture is good, the characteristics of big crystal grain; 2) Chinese patent of application number 200880128189.5 has been reported a kind of polycrystalline electron device, this device is having the Cadimium telluride thin film that obtains single shaft texture, biaxial texture and three texture on the metal of texture, alloy, nitride, boride, oxide compound, fluorochemical, carbide, silicide and the metal alloy substrate, though the Cadimium telluride thin film texture that forms on this device is good, grain-size is big, but depend on metal substrate texture, the polycrystal film of formation is aging easily because of being easy to generate lattice mismatch; 3) Chinese patent of application number 200880128189.5 has been reported a kind of deposition method of multi-section camium sulfide thin film, and this method is with chemical bath deposition multilayer cadmium sulphide membrane, and is different fully with existing Cadimium telluride thin film preparation method.
To sum up, in the existing Cadimium telluride thin film technology of preparing, can only make little crystal grain but the good Cadimium telluride thin film of texture, can only make big crystal grain but the Cadimium telluride thin film of texture difference, depend on highly-textured substrate, the easy mismatch of the lattice of polycrystal film and wearing out all can't be made the good Cadimium telluride thin film of big crystal grain and texture; And, more be difficult on untextured amorphous substrate (as glass) and directly make big crystal grain and the good Cadimium telluride thin film of texture.
Summary of the invention
The technical problem that the present invention solves is: proposed a kind of big crystal grain, texture is good, lattice is difficult for mismatch and can grows on simple glass low-cost Cadimium telluride thin film preparation method.
In order to solve the problems of the technologies described above, the technical scheme that the present invention proposes is: a kind of Cadimium telluride thin film preparation method comprises the steps:
Step 1: the vacuum chamber of substrate and cadmium antimonide powder source being put near space distillation device, the distance of regulating cadmium antimonide powder source and substrate is 1～4mm, the air pressure of regulating in the described vacuum chamber is 1000～10Pa, the heating first time is carried out in cadmium antimonide powder source and substrate, the Heating temperature in control cadmium antimonide powder source is 500～630 ℃, the Heating temperature of control substrate is 400～570 ℃, and temperature kept 3-5 minute after arriving, and naturally cooling is reduced to room temperature then;
Step 2: the air pressure of regulating in the described vacuum chamber is 0.1～10Pa, the heating second time is carried out in cadmium antimonide powder source and substrate, the Heating temperature in control cadmium antimonide powder source is 570～650 ℃, and the Heating temperature of control substrate is 400～570 ℃, and temperature kept 5 minutes after arriving;
Step 3: control cadmium antimonide powder source and substrate cool off simultaneously reduces to 300～400 ℃ of maintenances 20-50 minute, anneals;
Step 4: last naturally cooling is reduced to room temperature;
Whole process is not used protection gas.
The principle and the beneficial effect of technique scheme of the present invention are:
1) adopt high atmospheric pressure (air pressure of control near space distillation vacuum installation is the vacuum tightness of may command vacuum chamber) can increase oxygen level in the step 1, make that cadmium telluride is easily oxidized and generate nucleus, thereby can generate cadmium telluride polycrystal film highly-textured, little crystal grain earlier.
2) and then in the step 2, adjust air pressure and reduce reducing oxygen level, carry out the nucleus of cadmium telluride crystal grain when generating once more thereby can reduce, the growth rate once more that makes cadmium telluride crystal grain is greater than nucleation rate; Can make simultaneously the cadmium telluride crystal grain that generates once more along the highly-textured cadmium telluride crystal grain continued growth that generates earlier again.Because cadmium telluride crystal grain is stable cube phase, the cadmium telluride crystal grain of front and back diauxic growth all is homophase, therefore helps the cadmium telluride crystal grain of back secondary growth to carry out synthetically grown on the cadmium telluride crystal grain of the preceding secondary growth more than two or two; Thereby the grain-size of feasible back secondary growth increases and keeps highly-textured.
3) can regard highly-textured cadmium-telluride layer of the little crystal grain of one deck and the highly-textured cadmium-telluride layer of the big crystal grain of one deck as through the cadmium telluride polycrystal film that generates after step 1 and the step 2, but because diauxic growth continues to finish near space distillation device, two layers of cadmium telluride condense mutually, therefore actual is the complete cadmium telluride polycrystal film of one integrated mass, thus avoided utilizing different compound monocrystal substrates or highly-textured substrate (as metal substrate) bring lattice mismatch issue.
4) this diauxic growth mode has very big reducing (because oxygen level height in the process of growth for the first time, so the cadmium telluride grain growing is easily oxidized and generate nucleus) to the pattern degree of dependence of substrate than other growth pattern.As the common calcium soda glass of smooth amorphous substrate, perhaps the CdS film of polycrystalline substrate can grow the adhesion strength height in this way, the CdTe film that the texture degree is high.As in conjunction with conventional process of glass, can prepare photovoltaic cell component continuously, can greatly improve the photovoltaic cell throughput rate and also effectively reduce cost.
5) do not use protection gas in the whole Cadimium telluride thin film preparation process; both guaranteed the oxygen level in the preparation process; avoided again since the substrate that heating brings with film the diffusion problem between the different compounds, also reduced the complicacy of whole technology, reduce preparation cost.
To sum up, Cadimium telluride thin film growth method of the present invention can grow the Cadimium telluride thin film that texture is higher, crystal grain is bigger, lattice is difficult for mismatch; And can be on simple glass low-cost high-efficiency ground direct growth Cadimium telluride thin film.
Improvement of the technical scheme is: in the described step 2, carrying out earlier preheating the second time before the heating for the second time, the Heating temperature of control cadmium antimonide powder source and substrate is 200～300 ℃, temperature kept 10 minutes after arriving, (Heating temperature of promptly controlling the cadmium antimonide powder source is 570～650 ℃ to carry out heating for the second time again, the Heating temperature of control substrate is 400～570 ℃, and temperature kept 5 minutes after arriving).
The perfect of technique scheme is: the consuming time of described step 1 and step 2 all is one hour.
Further improving of technique scheme is: described substrate is glass or photovoltaic cell substrate.
Description of drawings
Below in conjunction with accompanying drawing Cadimium telluride thin film preparation method of the present invention is described further.
Fig. 1 is the structural representation of the near space distillation vacuum installation of embodiment of the invention employing.
Fig. 2 is a Cadimium telluride thin film growth temperature graphic representation in the embodiment of the invention one step 1.
Fig. 3 is a Cadimium telluride thin film growth temperature graphic representation in the embodiment of the invention one step 2.
Fig. 4 is a Cadimium telluride thin film growth temperature graphic representation in the embodiment of the invention two step 2.
Fig. 5 is the Cadimium telluride thin film XRD phenogram of the embodiment of the invention three preparations.
Fig. 6 is the Cadimium telluride thin film SEM phenogram of the embodiment of the invention three preparations.
Fig. 7 is to use the Cadimium telluride thin film XRD phenogram of traditional method preparation.
Fig. 8 is to use the Cadimium telluride thin film SEM phenogram of traditional method preparation.
Embodiment
Embodiment one
The Cadimium telluride thin film preparation method of present embodiment is as follows:
Step 1: select a glass substrate 5 and CdTe powder source 6, glass substrate 5 and CdTe powder source 6 are separately fixed on two relative up and down graphite blocks 4, make glass substrate 5 towards CdTe powder source 6, graphite block 4 is put into the shelf 2 of near space distillation vacuum installation as shown in Figure 1; The distance of regulating cadmium antimonide powder source 6 and glass substrate 5 according to ruler 3 usefulness nuts 1 is 2mm, the air pressure of regulating in the near space distillation device is 30Pa, the heating first time is carried out in cadmium antimonide powder source 6 and glass substrate 5, the Heating temperature in control cadmium antimonide powder source 6 is 500 ℃, the Heating temperature of feed glass substrate 5 is 450 ℃, temperature kept 3 minutes after arriving, and naturally cooling is reduced to room temperature then.Do not use protection gas in this step process, about one hour consuming time.The pre-growth temperature curve of the Cadimium telluride thin film of this step as shown in Figure 2.
Step 2: the air pressure of regulating in the near space distillation vacuum installation is 0.5Pa, the heating second time is carried out in cadmium antimonide powder source 6 and glass substrate 5, the Heating temperature in control cadmium antimonide powder source 6 is 600 ℃, the Heating temperature of feed glass substrate 5 is 500 ℃, and temperature keeps about 5 minutes after arriving.The growth temperature curve of the Cadimium telluride thin film of this step as shown in Figure 3.
Step 3: control cadmium antimonide powder source 6 and glass substrate 5 are cooled off simultaneously and are reduced to 300 ℃ of maintenances 22 minutes, anneal;
Step 4: last naturally cooling is reduced to room temperature, and whole process is not used protection gas.
Embodiment two
Present embodiment is the improvement on embodiment one basis, and different is except identical with embodiment one:
In step 1, the distance of regulating glass substrate 5 and CdTe powder source 6 with nut 1 is 3.5mm, the air pressure of regulating in the near space distillation vacuum installation is 200Pa, the heating first time is carried out in cadmium antimonide powder source 6 and glass substrate 5, the Heating temperature in control cadmium antimonide powder source 6 is 580 ℃, the Heating temperature of feed glass substrate 5 is 500 ℃, and temperature kept 4 minutes after arriving, and naturally cooling is reduced to room temperature then.
In step 2, the air pressure of regulating in the near space distillation vacuum installation is 6Pa,, before heating for the second time, earlier glass substrate 5 and CdTe powder source 6 are carried out preheating the second time, feed glass substrate 5 and CdTe powder source 6 temperature are 250 ℃, keep about 10 minutes; Again glass substrate 5 and CdTe powder source 6 are carried out the heating second time, control CdTe powder source 6 temperature are 610 ℃, and feed glass substrate 5 temperature are 550 ℃.The growth temperature curve of the Cadimium telluride thin film of this step as shown in Figure 4.
In step 3, control cadmium antimonide powder source 6 and glass substrate 5 are cooled off simultaneously and are reduced to 350 ℃ of maintenances 35 minutes, anneal.
Embodiment three
Present embodiment is the improvement on embodiment two bases, and different is except identical with embodiment two:
In step 1, the distance of regulating photovoltaic cell substrate 5 and CdTe powder source 6 with nut 1 is 2.5mm, the air pressure of regulating in the near space distillation vacuum installation is 70Pa, photovoltaic cell substrate 5 and CdTe powder source 6 are carried out the heating first time, control CdTe powder source 6 temperature are 520 ℃, control photovoltaic cell substrate 5 temperature are 470 ℃, and temperature kept 3.5 minutes after arriving, and naturally cooling is reduced to room temperature then.
In step 2, the air pressure of regulating in the near space distillation vacuum installation is 2Pa, and photovoltaic cell substrate 5 and CdTe powder source 6 are carried out preheating the second time, and control photovoltaic cell substrate 5 and CdTe powder source 6 temperature are 230 ℃, keep about 10 minutes; Again photovoltaic cell substrate 5 and CdTe powder source 6 are carried out the heating second time, control CdTe powder source temperature 6 is 600 ℃, and control photovoltaic cell substrate 5 temperature are 450 ℃.
In step 3, control cadmium antimonide powder source 6 and photovoltaic cell substrate 5 cool off simultaneously reduces to 370 ℃ of maintenances 30 minutes, anneals.
Embodiment four
Present embodiment is the improvement on embodiment three bases, and different is except identical with embodiment three:
In step 1, the distance of regulating photovoltaic cell substrate 5 and CdTe powder source 6 with nut 1 is 4mm, the air pressure of regulating in the near space distillation vacuum installation is 850Pa, photovoltaic cell substrate 5 and cadmium antimonide powder source 6 are carried out the heating first time, control CdTe powder source 6 temperature are 600 ℃, control photovoltaic cell substrate 5 temperature are 550 ℃, and temperature kept 5 minutes after arriving, and naturally cooling is reduced to room temperature then.
In step 2, the air pressure of regulating in the near space distillation vacuum installation is 8Pa, and photovoltaic cell substrate 5 and CdTe powder source 6 are carried out earlier preheating the second time, and control photovoltaic cell substrate 5 and CdTe powder source 6 temperature are 280 ℃, keep about 10 minutes; Again photovoltaic cell substrate 5 and CdTe powder source 6 are carried out the heating second time, control CdTe powder source 6 temperature are 630 ℃, and control photovoltaic cell substrate 5 temperature are 560 ℃.
In step 3, control cadmium antimonide powder source 6 and photovoltaic cell substrate 5 cool off simultaneously reduces to 400 ℃ of maintenances 45 minutes, anneals.
The Cadimium telluride thin film of selecting the foregoing description three to grow carries out XRD and SEM characterizes (Cadimium telluride thin film of other embodiment growths carries out XRD and SEM characterizes with embodiment three similar) discovery, as shown in Figure 5 and Figure 6, utilize Cadimium telluride thin film crystal grain that the inventive method grows out roughly at 20um, have highly textured orientation simultaneously.Cadimium telluride thin film texture that the contrast traditional method grows out and surface topography (XRD and SEM characterize) as shown in Figure 7 and Figure 8, can find that though the grain size of two kinds of method growths is similar, the texture of traditional Cadimium telluride thin film is far short of what is expected.
The described concrete technical scheme of the foregoing description that is not limited to of the present invention, all employings are equal to the technical scheme of replacing formation and are the protection domain that the present invention requires.
Claims (4)
1. a Cadimium telluride thin film preparation method is characterized in that comprising the steps:
Step 1: the vacuum chamber of substrate and cadmium antimonide powder source being put near space distillation device, the distance of regulating cadmium antimonide powder source and substrate is 1～4mm, the air pressure of regulating in the described vacuum chamber is 1000～10Pa, the heating first time is carried out in cadmium antimonide powder source and substrate, the Heating temperature in control cadmium antimonide powder source is 500～630 ℃, the Heating temperature of control substrate is 400～570 ℃, and temperature kept 3-5 minute after arriving, and naturally cooling is reduced to room temperature then;
Step 2: the air pressure of regulating in the described vacuum chamber is 0.1～10Pa, the heating second time is carried out in cadmium antimonide powder source and substrate, the Heating temperature in control cadmium antimonide powder source is 570～650 ℃, and the Heating temperature of control substrate is 400～570 ℃, and temperature kept 5 minutes after arriving;
Step 3: control cadmium antimonide powder source and substrate cool off simultaneously reduces to 300～400 ℃ of maintenances 20-50 minute, anneals;
Step 4: last naturally cooling is reduced to room temperature;
Whole process is not used protection gas.
2. according to the described Cadimium telluride thin film preparation method of claim 1, it is characterized in that: in the described step 2, carrying out earlier preheating the second time before the heating for the second time, the Heating temperature of control cadmium antimonide powder source and substrate is 200～300 ℃, temperature kept 10 minutes after arriving, and carried out the heating second time again.
3. according to the described Cadimium telluride thin film preparation method of claim 2, it is characterized in that: the consuming time of described step 1 and step 2 all is one hour.
4. according to claim 1,2 or 3 described Cadimium telluride thin film preparation methods, it is characterized in that: described substrate is glass or photovoltaic cell substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110257959.XA CN102286741B (en) | 2011-09-02 | 2011-09-02 | Method for preparing cadmium telluride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110257959.XA CN102286741B (en) | 2011-09-02 | 2011-09-02 | Method for preparing cadmium telluride film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102286741A true CN102286741A (en) | 2011-12-21 |
| CN102286741B CN102286741B (en) | 2012-12-19 |
Family
ID=45333489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110257959.XA Expired - Fee Related CN102286741B (en) | 2011-09-02 | 2011-09-02 | Method for preparing cadmium telluride film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102286741B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674166A (en) * | 2015-03-10 | 2015-06-03 | 中国科学技术大学 | CdTe film preparation method and CdTe solar cell comprising CdTe film |
| CN107858545A (en) * | 2017-12-06 | 2018-03-30 | 清远先导材料有限公司 | The minimizing technology of free tellurium in a kind of high-melting-point telluride alloy |
| CN109991649A (en) * | 2019-03-26 | 2019-07-09 | 华中科技大学 | A method of preparing inorganic scintillator film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0006025A1 (en) * | 1978-06-02 | 1979-12-12 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Process for manufacturing a thin-film CdS/CdTe photovoltaic cell having enhanced conversion efficiency and photovoltaic cell produced by this process |
| CN101609860A (en) * | 2009-07-16 | 2009-12-23 | 上海联孚新能源科技有限公司 | CdTe thin-film solar cells preparation method |
| CN101794840A (en) * | 2010-02-11 | 2010-08-04 | 上海联孚新能源科技有限公司 | Method for preparing flexible CdTe thin film solar cell |
| CN102047431A (en) * | 2008-06-04 | 2011-05-04 | 索莱克山特公司 | Thin film solar cells with monolithic integration and backside contact |
-
2011
- 2011-09-02 CN CN201110257959.XA patent/CN102286741B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0006025A1 (en) * | 1978-06-02 | 1979-12-12 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Process for manufacturing a thin-film CdS/CdTe photovoltaic cell having enhanced conversion efficiency and photovoltaic cell produced by this process |
| CN102047431A (en) * | 2008-06-04 | 2011-05-04 | 索莱克山特公司 | Thin film solar cells with monolithic integration and backside contact |
| CN101609860A (en) * | 2009-07-16 | 2009-12-23 | 上海联孚新能源科技有限公司 | CdTe thin-film solar cells preparation method |
| CN101794840A (en) * | 2010-02-11 | 2010-08-04 | 上海联孚新能源科技有限公司 | Method for preparing flexible CdTe thin film solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674166A (en) * | 2015-03-10 | 2015-06-03 | 中国科学技术大学 | CdTe film preparation method and CdTe solar cell comprising CdTe film |
| CN104674166B (en) * | 2015-03-10 | 2017-10-03 | 中国科学技术大学 | A kind of CdTe thin film preparation method and the CdTe solar cells comprising it |
| CN107858545A (en) * | 2017-12-06 | 2018-03-30 | 清远先导材料有限公司 | The minimizing technology of free tellurium in a kind of high-melting-point telluride alloy |
| CN107858545B (en) * | 2017-12-06 | 2019-08-30 | 先导薄膜材料（广东）有限公司 | Dissociate the minimizing technology of tellurium in a kind of high-melting-point telluride alloy |
| CN109991649A (en) * | 2019-03-26 | 2019-07-09 | 华中科技大学 | A method of preparing inorganic scintillator film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102286741B (en) | 2012-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107785241B (en) | A method of preparing beta-gallium oxide film on a silicon substrate | |
| Frantz et al. | Cu (In, Ga) Se2 thin films and devices sputtered from a single target without additional selenization | |
| CN103456603B (en) | Gallium system heterogeneous semiconductor substrate is prepared method and the gallium oxide film of gallium oxide film | |
| CN103700576B (en) | A kind of self assembly forms the preparation method of the controlled silicon nano-crystalline film of size | |
| CN106868469B (en) | A method of non-metal catalyst prepares graphene in silicon substrate | |
| CN114086126B (en) | Monocrystalline solar cell film material and preparation method thereof | |
| Park et al. | Comprehensive characterization of CIGS absorber layers grown by one-step sputtering process | |
| KR100857227B1 (en) | Manufacturing method of i-iii-vi2 compound semiconductor thin films by one step metal organic chemical vapor deposition process | |
| CN114921773B (en) | Preparation method of diamond-based rare earth doped single-layer or multi-layer functional film | |
| CN102286741B (en) | Method for preparing cadmium telluride film | |
| CN112831768A (en) | Preparation method and application of hafnium nitride film with high crystallization quality | |
| Xie et al. | Fabrication of Sb2S3 solar cells by close space sublimation and enhancing the efficiency via co-selenization | |
| Park et al. | 10% efficiency Cu (In, Ga) Se2 solar cell with strongly (220)/(204) oriented Cu-poor absorber layers sputtered using single quaternary target | |
| CN102534767B (en) | Na-mixing method for growing p-type ZnO single crystal film | |
| CN104818452A (en) | Method for preparing nitrogen aluminum co-doping p type zinc oxide thin film | |
| CN104766784A (en) | Method for preparing flexible polycrystalline silicon thin film through deposition based on flexible graphite paper substrate | |
| CN108330536B (en) | Preparation method of PA-MBE homoepitaxy high-quality GaN monocrystal film | |
| Shang et al. | Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates | |
| CN111933514B (en) | Method for preparing Ir (111) composite substrate for epitaxial single crystal diamond by electron beam evaporation process | |
| CN105132875B (en) | A kind of method that diffusion method prepares high concentration gradient AZO monocrystalline conductive films | |
| Fan et al. | Characterization of CuInS2 thin films prepared by aerosol jet deposition | |
| CN102005487A (en) | Light absorption layer material for flexible thin film solar cell and preparation method thereof | |
| CN110643937A (en) | Aluminum-doped AlN-CdZnTe composite structure component and preparation method thereof | |
| CN101295749B (en) | Powder metallurgy metallic silicon solar battery underlay producing technique | |
| CN103280486A (en) | Preparation method of CuInGaSe film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121219 Termination date: 20130902 |