CN112030116B - Modulation arc ion plating device with central air inlet - Google Patents
Modulation arc ion plating device with central air inlet Download PDFInfo
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- CN112030116B CN112030116B CN202010736213.6A CN202010736213A CN112030116B CN 112030116 B CN112030116 B CN 112030116B CN 202010736213 A CN202010736213 A CN 202010736213A CN 112030116 B CN112030116 B CN 112030116B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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Abstract
The invention belongs to the field of cathode arc source equipment which relates to a key part of an arc ion plating technology, and particularly relates to a modulated pulse arc ion plating device with central air inlet. The invention adopts center ventilation to realize that process gas enters from the center of the target, increases the energy of the deposited compound phase, optimizes the coating structure, reduces the size of a molten pool of arc discharge and inhibits the generation of large particles.
Description
Technical Field
The invention belongs to the field of cathode arc source equipment which is a key component in an arc ion plating technology, and particularly relates to a modulated pulse arc ion plating device with central air inlet.
Background
The arc ion plating technology is an advanced vacuum plating technology at present, and due to a series of advantages of simple structure, high ionization rate, high incident particle energy, good diffraction, realization of low-temperature deposition and the like, the arc ion plating technology is rapidly developed and widely applied, and shows great economic benefit and industrial application prospect. However, the large particle spray causes the surface pollution of the film, causes the roughness of the surface to be increased, reduces the gloss of the film, brings adverse effects on decoration and wear resistance application, seriously affects the quality of the film, causes the adhesion of a plating layer to be reduced, causes the peeling phenomenon to occur, and causes the plating layer to be seriously uneven.
The arc ion plating has the outstanding advantages of high ionization rate and low-temperature deposition, so that the arc ion plating shows the advantages which are not possessed by other plating modes on a tool and a die, but the characteristics of arc discharge enable the existence of large particles to become the obstruction of the tool and die plating and also become the bottleneck problem of the deeper and wide application of the arc ion plating technology.
In addition, the conventional arc source at present is not well applicable to materials with partial discharge abnormality, such as: graphite is used as a common conductive low-friction material, which is a base material for preparing superhard diamond-like carbon which is conductive and has certain frictional wear, but the graphite target has the defects of arc spot aggregation, low movement speed and obvious etching pits during arc discharge; the aluminum oxide is a conventional wear-resistant heat-insulating anticorrosive material, and the preparation process mainly utilizes pure metal aluminum as a target material to react in an oxygen atmosphere, but the aluminum target is in arc discharge, because the melting point of aluminum is lower, the large particles of pure metal arc discharge are extremely large, meanwhile, the reaction activity of aluminum is extremely strong, the oxidation reaction is extremely easy to occur in the oxygen atmosphere, the aluminum oxide is a high-melting-point insulating material, the arc discharge is abnormal due to the oxidation of the surface of the target material, the arc spots are poorly driven, and the deposition efficiency is reduced; the nitride and oxide of pure metal zirconium have bright metallic luster, and are surface coating materials of common decorative and functional ceramic-based materials, but zirconium is different from common target materials of chromium and titanium in the arc discharge process, and is extremely sensitive to an electronic channel in the discharge process, and arc spots are easy to generate an arc running phenomenon in the discharge process, so that part of insulators are damaged and burnt.
At present, the measure for removing large particles which is more applied and has better effect is magnetic filtration, the adoption of the magnetic filtration technology effectively eliminates the pollution of the large particles, but the loss of plasma in the transmission process also greatly reduces the deposition rate, the highest transmission efficiency of the plasma is only 5 percent at present, which causes the waste of raw materials and the reduction of production efficiency, the advantage of arc ion plating is that the deposition rate is high, which is one of the reasons that the technology is widely applied in the industrial field, the outstanding advantage that the large particles cannot be lost for reducing part of the large particles is also an important reason that the magnetic filtration technology cannot be industrialized.
The effective way for effectively utilizing the arc source target at the present stage is mainly to control the motion area of the arc spot through the change of a magnetic field by manually adjusting the distance between a single magnetic group and the surface of the target, and the mode is manual empirical operation, so that certain uncontrollable property exists and the operation is complicated; the other effective way is that the electromagnetic coil controls the movement of the arc spot of the arc target, but the output voltage and the frequency of the common electromagnetic coil are not adjustable, most of the common electromagnetic coil is only pulse output under a certain frequency, and the linear stepless adjustment of the output voltage and the frequency cannot be realized.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a central air inlet modulation pulse arc ion plating device.
The technical scheme adopted by the invention is as follows: a modulated pulse arc ion plating device with central air inflow comprises a cathode cover and a cathode base, wherein the cathode cover and the cathode base are connected to form a cathode assembly, a target installation part is arranged on the surface of one side, away from the cathode cover, of the cathode base, a target is connected onto the target installation part, a first through hole is formed in the center of the target, a second through hole communicated with the first through hole is formed in the cathode base, a third through hole communicated with the second through hole is formed in the cathode cover, and an air inflow pipeline is formed by the first through hole, the second through hole and the third through hole;
a coil is arranged on one side of the cathode cover, which is far away from the cathode base, and modulation coil current is applied to the coil;
the modulation coil current is a rectangular wave programmable control coil current which has a larger period and can realize linear regulation;
a group of first magnetic poles are arranged on the cathode base; and a group of second magnetic poles are arranged on the surface of one side of the cathode cover, which is far away from the cathode seat.
A cooling water cavity is arranged between the cathode cover and the cathode base; one side of the cathode base close to the cathode cover is provided with a raised hollow air guide column, the part of the second through hole is the hollow part of the air guide column, the cathode cover corresponds to an inner sinking groove matched with the air guide column, and the air guide column is positioned in the inner sinking groove and is in sealing fit with the inner sinking groove.
Be equipped with first annular seal groove on the circumference lateral wall of air guide post, the one end tip of air guide post butt cathode cap is equipped with second annular seal groove, all be equipped with the sealing member in first annular seal groove and the second annular seal groove and be used for and interior heavy inslot inner wall between form sealed cooperation relation.
A groove is formed in the surface of one side, away from the target mounting part, of the cathode base, a raised partition plate is arranged in the groove, the partition plate is abutted against the cathode cover, a cooling water cavity is formed between the cathode cover and the bottom of the groove, the partition plate enables the cooling water cavity to form a plurality of independent cavities, and a through hole is formed in the partition plate and enables the independent cavities to be communicated to form a spiral water channel;
and the cathode cover is provided with two water inlet pipes and two water outlet pipes which are respectively communicated with the two ends of the spiral water channel.
An air guide pipe is arranged in the first through hole and made of an insulating material.
The cathode base is provided with a plurality of permanent magnet mounting holes which are arranged along an annular shape, and the permanent magnet mounting holes are used for arranging first magnetic poles.
The surface of one side of the cathode cover, which is far away from the cathode base, is provided with a raised hollow air inlet pipe, and the second magnetic pole is connected with the air inlet pipe and can axially displace relative to the air inlet pipe.
The cathode assembly is fixed on one side of the mounting plate, an opening for completely exposing the target is formed in the mounting plate, an anode cover is mounted on the other side, opposite to the cathode assembly, of the mounting plate, and the vertical distance between the outer end of the anode cover and the mounting plate is larger than the vertical distance between the outer surface of the target and the mounting plate;
the anode cover is electrically connected with the anode of the pulse arc power supply, and the cathode component is electrically connected with the cathode of the pulse arc power supply;
the pulse arc power supply is an arc power supply which has a certain basic value as an arc stabilizing current and can periodically output instant strong current, and the specific parameters are as follows: the base current of 0-100A can be adjusted, the peak current of 100-1000A can be adjusted, the frequency is 1-1KHZ, and the duty ratio is 1-80%.
The anode cover is of an annular conical structure, and the taper angle of the anode cover is 30-45 degrees; or the anode cover is of a long strip bending structure, and the bending angle of the anode cover is 30-45 degrees.
The anode cover is of a hollow structure, and cooling water is introduced into an inner cavity of the anode cover.
The invention has the following beneficial effects: the invention adopts central ventilation to realize the entrance of process gas from the center of the target material, on one hand, the uniformity of the gas on the target surface and the direction uniformity of the plasma gas flow are realized; on the other hand, during arc discharge, the activation effect of the target surface gas is greatly improved, and the ionization effect of the arc discharge is also obviously improved; in addition, for preparing nitride, oxynitride, oxide and the like by using the pure metal target material, the ionization rate of reaction gas can be greatly improved by introducing process gas into the center, so that the energy of the deposited compound phase is increased, and the coating structure is optimized; on the other hand, the target surface can react with the reaction gas more conveniently, and the melting point of the compound is far greater than that of the pure metal, so that the size of a molten pool of arc discharge can be reduced, and the generation of large particles is inhibited; and the periodic control of the motion position of the arc spot and the arc spot is realized by using the modulation coil current.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is within the scope of the present invention for those skilled in the art to obtain other drawings based on the drawings without inventive labor.
FIG. 1 is a schematic structural view of example 1 of the present invention;
FIG. 2 is a sectional view of example 1 of the present invention;
FIG. 3 is a schematic view of an angle structure of the cathode base;
FIG. 4 is a schematic view of another angle structure of the cathode base;
FIG. 5 is a schematic structural view of a cathode cap;
FIG. 6 is a schematic view of the structure of the mounting plate;
FIG. 7 is a schematic structural view of example 2 of the present invention;
FIG. 8 is a schematic view of a target surface magnetic field simulation comprising an electromagnetic coil and a magnetic shoe;
FIG. 9 is a schematic diagram of a modulation coil current waveform output mode;
FIG. 10 is a schematic diagram of a second mode of modulating the output of the coil current waveform;
FIG. 11 is a schematic diagram of a pulsed arc current output;
in the figure, 1, a cathode cap; 101, a third through hole; 102, a water inlet pipe; 103, discharging a water pipe; 104, an air inlet pipe; 105, an inner sinking groove; 2, a cathode base; 201, a target mounting part; 202, a second via; 203, a gas guiding column; 204, a groove; 205, a separator; 206, a through port; 207, permanent magnet mounting holes; 208, a first annular seal groove; 209, a second annular seal groove; 3, a target material; 301, a first via; 302, an airway tube; 4, a coil; 5, a first magnetic pole; 6, a second magnetic pole; 7, cooling the water cavity; 8, tetrafluoro plate; 9, a ceramic ring; 10, a coil fixing member; 11, mounting a plate; 1101, an opening; 12, an anode cover; 13, a shielding plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
It should be noted that all expressions using "first" and "second" in the embodiments of the present invention are used for distinguishing two entities with the same name but different names or different parameters, and it should be noted that "first" and "second" are merely for convenience of description and should not be construed as limitations of the embodiments of the present invention, which are not described in any more detail in the following embodiments.
The terms of direction and position of the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "top", "bottom", "side", etc., refer to the direction and position of the attached drawings. Accordingly, the use of directional and positional terms is intended to illustrate and understand the present invention and is not intended to limit the scope of the present invention.
Example 1:
as shown in fig. 1 and 2, a center-fed modulated high current pulsed arc ion plating apparatus includes: the cathode comprises a cathode seat 2 and a cathode cover 1, wherein the cathode cover 1 and the cathode seat 2 are connected to form the cathode assembly, a target mounting part 201 is arranged on one side surface of the cathode seat 2, which is far away from the cathode cover 1, and the target 3 is fixed in the target mounting part 201, and in the embodiment, the target mounting part 201 is a limiting groove matched with the target 3; the cathode base 2 is provided with a second through hole 202 communicated with the first through hole 301, the cathode cover 1 is provided with a third through hole 101 communicated with the second through hole 202, and the first through hole 301, the second through hole 202 and the third through hole 101 are connected to form an air inlet pipeline.
The process gas enters from the center of the target by adopting center ventilation, so that the uniformity of the gas on the target surface and the direction uniformity of the plasma gas flow are realized on one hand; on the other hand, during arc discharge, the activation effect of the target surface gas is greatly improved, and the ionization effect of the arc discharge is also obviously improved; in addition, for preparing nitride, oxynitride, oxide and the like by using the pure metal target material, the ionization rate of reaction gas can be greatly improved by introducing process gas into the center, so that the energy of the deposited compound phase is increased, and the coating structure is optimized; on the other hand, the target surface can react with the reaction gas more conveniently, and the melting point of the compound is far greater than that of the pure metal, so that the size of a molten pool of arc discharge can be reduced, and the generation of large particles is inhibited.
A coil fixing piece 10 is arranged on the surface of one side, away from the cathode base 2, of the cathode cover 1, a coil 4 is arranged on the coil fixing piece 4, and a modulation coil current is applied to the coil 4; the modulation coil current is a rectangular wave programmable control coil 4 current which has a large period and can realize linear regulation. A group of first magnetic poles 5 are arranged on the cathode cover 1; a group of second magnetic poles 6 are arranged on the surface of one side of the cathode cover 1 far away from the cathode base 2.
And the periodic control of the motion position of the arc spot and the arc spot is realized by using the modulation coil current. As shown in fig. 8, the point where the horizontal magnetic field strength generated by the interaction between the magnetic field formed by the coil current and the first magnetic pole 5 and the second magnetic pole 6 is the maximum is periodically changed, and the arc spot on the corresponding target surface is also periodically changed, so that the target surface is etched more uniformly. The rectangular wave output which has a larger period and can realize linear regulation and can be controlled and regulated by a program is adopted, and the rectangular wave output interacts with two groups of magnetic poles arranged in the cathode body, so that a relatively gentle horizontal component magnetic field can be formed on a target surface, the movement stroke of electrons in the arc discharge process can be effectively increased, and the concentration and the strength of plasma are improved; in addition, the movement position of the arc spot on the target surface of the graphite target can be effectively realized by adopting the coil current with a large period and capable of being linearly adjusted, namely, the arc spot can be controlled to move from inside to outside through the control of a coil magnetic field, for example: the process parameter of the coil is 0.05hz, the duty ratio is 50%, the variation period is 5min, the coil voltage is set to be-20V to-12V/15V to-5V/8V to +2V/0V to +5V, and the arc spots on the graphite target can be controlled to be etched on the whole target surface; similarly, for a metal target, the loading of the coil current with a large period and linear adjustment can realize the arc runway of the whole target surface, and the utilization rate of the target material is greatly improved.
The coil fixing member 10 is a nylon sleeve to achieve potential insulation.
The cathode is fixed on the mounting plate 11 through the tetrafluoro plate 8 and a bolt with an insulating sleeve, so that potential insulation is realized.
The cathode assembly is fixed on one side of the mounting plate 11, an opening 1101 for completely exposing the target is formed in the mounting plate 11, an anode cover 12 is mounted on the other side, opposite to the cathode assembly, of the mounting plate 11, and the vertical distance between the outer end of the anode cover 12 and the mounting plate 11 is larger than the vertical distance between the outer surface of the target 3 and the mounting plate 11;
the shielding plate assembly comprises a ceramic ring 9 and a shielding plate 13, the ceramic ring is sleeved outside the target 3, the height of the ceramic ring is 2-5mm higher than the target surface, and the shielding plate 13 is tightly attached to the outer end part of the ceramic ring 13 and fixed on the mounting plate 11 through a bolt with an insulating ceramic sleeve to realize potential insulation with the mounting plate 11.
The modulation coil current can specifically adopt two modes of linear programmable modulation coil 4 current, the mode 1 is that rectangular wave output which has a larger period and can realize linear adjustment and can be controlled and adjusted by a program, the frequency is 0.01-50HZ, the voltage is +/-20 v, the duty ratio is 0-80%, and the change period of each group of voltage is 1-30min and can realize remote linear periodic adjustment of output voltage. Mode 2 is an arbitrary voltage program that can be periodically operated, the voltage amplitude and the operation time of each segment can be arbitrarily set in a period, and a group of program streams are formed by setting different voltage amplitudes and operation times, and the program streams can be periodically operated. The voltage setting range is-60V to +60V, and the running time precision is 0.001S. The programmable command segment in each group of periods is 0-1000 segments. The set of commands that can be set is 100 sets, each of which can be remembered and called separately. Through interaction of the programmable modulation magnetic field and the two groups of magnetic poles arranged in the cathode body, a relatively gentle horizontal component magnetic field can be formed on the target surface, the movement stroke of electrons in the arc discharge process can be effectively increased, and the concentration and the strength of plasma are improved; in addition, in the mode 1, the coil current with a large period and capable of being linearly adjusted is adopted, so that the change of the movement position of the arc spot on the target surface of the graphite target can be effectively realized, namely the arc spot is controlled to move from inside to outside through the control of a coil magnetic field, for example: the process parameters of the coil are frequency 0.05hz, duty ratio is 50%, and the coil voltage is set to be-20V to-12V/15V to-5V/8V to- +2V/0V to +5V at each stage for 5min periodically, so that arc spots on the graphite target can be controlled to be etched on the whole target surface; similarly, for a metal target, the loading of the coil current with a large period and linear adjustment can realize the arc runway of the whole target surface, and the utilization rate of the target material is greatly improved. The random programming current mode of the mode 2 can randomly control the arc spot discharge position and discharge time of each stage, can realize periodic control, and can effectively realize the programming control of the arc spots.
A cooling water cavity 7 is arranged between the cathode cover 1 and the cathode base 2; one side of the cathode base 2 close to the cathode cover 1 is provided with a raised hollow air guide column 203, the part of the second through hole 202 is the hollow part of the air guide column 203, the cathode cover 1 corresponds to an inner sinking groove 105 with an adaptive air guide column 203, and the air guide column 203 is positioned in the inner sinking groove 105 and is in sealing fit with the inner sinking groove 105.
Be equipped with first annular seal groove 208 on the circumference lateral wall of air guide column 203, the one end tip of air guide column 203 butt cathode cap 1 is equipped with second annular seal groove 209, all be equipped with the sealing member in first annular seal groove 208 and the second annular seal groove 209 and be used for and form sealed cooperation relation between the heavy groove 105 inner wall in. And the water sealing and the air sealing are ensured through two sealing matching.
As shown in fig. 3, a groove 204 is formed in a surface of the cathode base 2 on a side away from the target mounting portion 201, a protruding partition plate 205 is arranged in the groove 204, the partition plate 205 abuts against the cathode cover 1, a cooling water cavity 7 is formed between the cathode cover 1 and the bottom of the groove 204, the partition plate 205 enables the cooling water cavity 7 to form a plurality of independent cavities, and a through hole 206 is formed in the partition plate 205 to enable the plurality of independent cavities to be communicated to form a spiral water channel;
the cathode cover 1 is provided with two water inlet pipes 102 and two water outlet pipes 103 which are respectively communicated with two ends of the spiral water channel.
An air duct 302 is arranged in the first through hole 301, and the air duct 302 is made of an insulating material. The air duct 302 is sleeved in the central hole of the target material, is 2-5mm higher than the target surface, has the inner diameter of 3-5mm and the wall thickness of 1-5mm, and is made of alumina, zirconia, silicon nitride and silicon carbide insulating ceramic materials.
The cathode base 2 is provided with a plurality of permanent magnet mounting holes 207 which are annularly arranged, and the permanent magnet mounting holes 207 are used for arranging the first magnetic poles 5.
The surface of one side of the cathode cover 1, which is far away from the cathode base 2, is provided with a raised hollow air inlet pipe 104, and the second magnetic pole 6 is connected with the air inlet pipe 104 and can axially displace relative to the air inlet pipe 104. Specifically, the second magnetic pole 6 is a single annular magnet with a central hole and is bonded on a nylon sleeve, and the nylon sleeve is provided with threads which can move back and forth on the central air inlet pipe.
The anode cover 12 is electrically connected with the anode of the pulse arc power supply, and the cathode component is electrically connected with the cathode of the pulse arc power supply;
as shown in fig. 11, the pulse arc power supply has a certain basic value as an arc stabilizing current, and can periodically output an instantaneous strong current, and the specific parameters are as follows: the base current of 20-100A is adjustable, the peak current of 100-1000A is adjustable, the frequency is 1-1KHZ, and the duty ratio is 1-80%.
The adoption of the pulse arc refers to the fact that a certain base value current is used as an arc stabilizing current, the peak current is a pulse strong current, a strong current can be instantly applied to a target surface, the strong current is applied to increase the magnetic field intensity of the target surface on the one hand, so that the bifurcation of arc spots on the target surface is caused, a split arc is formed, the generation of large particles is reduced, on the other hand, the superposition of the strong current on the other hand is instantly carried out, the size of the arc stabilizing base value current can be greatly reduced by more than 45A of the arc stabilizing current of a direct current power supply, the pulse arc current 20A can also normally work, the generation of the large particles can be reduced, meanwhile, the electron concentration and the collision are enhanced by the superposition of the strong current, the plasma intensity in the arc discharge process can be improved, and the ionization rate of a cathode is improved.
The anode cover 12 is of an annular conical structure, and the conical angle of the anode cover is 30-45 degrees.
The anode cover with the annular conical structure is sleeved on the periphery of the cathode target surface, so that the smoothness of a plasma channel can be effectively realized, the impedance is reduced, and the normal operation of arc discharge is ensured.
The anode cover 12 is a hollow structure, and cooling water is introduced into an inner cavity of the anode cover. The water-cooled anode is adopted, so that the temperature of the surface of the anode can be greatly reduced, the minimum resistance of the anode is ensured (the higher the temperature is, the larger the resistance is, the water-cooled anode is not loaded, in the discharging process, after the temperature rises, the resistance is increased, and partial electrons can flow back from other places with the minimum resistance), and the normal operation of arc discharge is ensured.
The anode cover in the embodiment adopts an annular water-cooling conical cover which is sleeved on each cathode and can independently cool each cathode, and meanwhile, the inside of each anode cover is of a hollow structure so that cold water can flow.
Each independent anode water cooling cover can well realize the circulation of electrons in a circuit in the cathode discharge process, and simultaneously well realize the cooling on the anode, thereby ensuring the stability of cathode discharge.
Example 2:
the structure of this embodiment is substantially the same as that of embodiment 1, and the only inconsistency is that the anode casing 12 is a long strip bending type structure with a bending angle of 30-45 °. The anode cover 12 with the strip bending structure can realize the smoothness of a plasma channel, reduce impedance and ensure the normal operation of arc discharge. This embodiment adopts two independent rectangular water-cooling boards of bending to realize the cooling to a row of negative pole, can effectual improvement electron's acceptance area like this, promotes the collision number of times of electron circulation in-process, is favorable to promoting the ionization rate.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. The utility model provides a modulation pulse arc ion plating device that center was admitted air, includes negative pole lid (1) and negative pole seat (2), negative pole lid (1) and negative pole seat (2) are connected and are formed the negative pole subassembly, one side that negative pole lid (1) was kept away from in negative pole seat (2) is equipped with target installation department (201) on the surface, be connected with target (3), its characterized in that on target installation department (201): a first through hole (301) is formed in the center of the target (3), a second through hole (202) communicated with the first through hole (301) is formed in the cathode base (2), a third through hole (101) communicated with the second through hole (202) is formed in the cathode cover (1), and the first through hole (301), the second through hole (202) and the third through hole (101) are connected to form an air inlet pipeline;
a coil (4) is arranged on one side, away from the cathode base (2), of the cathode cover (1), and modulation coil current is applied to the coil;
the modulation coil current is rectangular wave programmable control coil current with a large period and capable of realizing linear regulation, specifically, the frequency is 0.01-50HZ, the voltage is +/-20 v, the duty ratio is 0-80%, and the change period of each group of voltage is 1-30min so as to realize remote linear periodic regulation of output voltage;
a group of first magnetic poles (5) are arranged on the cathode base (2); and a group of second magnetic poles (6) are arranged on the surface of one side of the cathode cover (1) far away from the cathode seat (2).
2. The center-fed modulated pulsed arc ion plating apparatus of claim 1, wherein: a cooling water cavity (7) is arranged between the cathode cover (1) and the cathode base (2); one side that negative pole seat (2) is close cathode cover (1) is equipped with bellied hollow air guide post (203), and the part of second through-hole (202) is air guide post (203) hollow portion, cathode cover (1) corresponds air guide post (203) is equipped with interior heavy groove (105) of adaptation, air guide post (203) are located in heavy groove (105) and with interior heavy groove (105) seal fit.
3. The modulated pulsed arc ion plating apparatus with center feed gas as claimed in claim 2, wherein: be equipped with first annular seal groove (208) on the circumference lateral wall of air guide post (203), the one end tip of air guide post (203) butt cathode cover (1) is equipped with second annular seal groove (209), all be equipped with the sealing member in first annular seal groove (208) and second annular seal groove (209) and be used for and form sealed cooperation relation between heavy groove (105) inner wall in.
4. The center-fed modulated pulse arc ion plating apparatus of any one of claims 1 to 3, wherein: a groove (204) is formed in the surface of one side, away from the target mounting portion (201), of the cathode base (2), a raised partition plate (205) is arranged in the groove (204), the partition plate (205) abuts against the cathode cover (1), a cooling water cavity (7) is formed between the cathode cover (1) and the bottom of the groove (204), the partition plate (205) enables the cooling water cavity (7) to form a plurality of independent cavities, and a through hole (206) is formed in the partition plate (205) and enables the independent cavities to be communicated to form a spiral water channel;
and the cathode cover (1) is provided with two water inlet pipes (102) and two water outlet pipes (103) which are respectively communicated with the two ends of the spiral water channel.
5. The center-fed modulated pulse arc ion plating apparatus of any one of claims 1 to 3, wherein: an air duct (302) is arranged in the first through hole (301), and the air duct (302) is made of an insulating material.
6. The modulated pulse arc ion plating apparatus with center gas feed as recited in claim 1, wherein: the cathode base (2) is provided with a plurality of permanent magnet mounting holes (207) which are arranged along a ring shape, and the permanent magnet mounting holes (207) are used for arranging first magnetic poles (5).
7. The modulated pulsed arc ion plating apparatus with center gas feed of claim 1, wherein: the cathode cover (1) is provided with a raised hollow air inlet pipe (104) on the surface of one side far away from the cathode base (2), and the second magnetic pole (6) is connected with the air inlet pipe (104) and can axially displace relative to the air inlet pipe (104).
8. The modulated pulsed arc ion plating apparatus with center feed gas as claimed in claim 1, wherein: the cathode assembly is fixed on one side of the mounting plate (11), an opening (1101) for completely exposing the target is formed in the mounting plate (11), an anode cover (12) is mounted on the other side, opposite to the cathode assembly, of the mounting plate (11), and the vertical distance between the outer end of the anode cover (12) and the mounting plate (11) is larger than the vertical distance between the outer surface of the target (3) and the mounting plate (11);
the anode cover (12) is electrically connected with the anode of the pulse arc power supply, and the cathode component is electrically connected with the cathode of the pulse arc power supply;
the pulse arc power supply is an arc power supply which has a certain basic value as an arc stabilizing current and can periodically output instant strong current, and the specific parameters are as follows: the base current of 20-100A is adjustable, the peak current of 100-1000A is adjustable, the frequency is 1-1KHZ, and the duty ratio is 1-80%.
9. The modulated pulsed arc ion plating apparatus with center feed gas of claim 8, wherein: the anode cover (12) is of an annular conical structure, and the conical angle of the anode cover is 30-45 degrees; or the anode cover (12) is of a long strip bending structure, and the bending angle of the anode cover is 30-45 degrees.
10. The modulated pulsed arc ion plating apparatus with center feed gas according to claim 8 or 9, characterized in that: the anode cover (12) is of a hollow structure, and cooling water is introduced into an inner cavity of the anode cover.
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| CN202010736213.6A CN112030116B (en) | 2020-07-28 | 2020-07-28 | Modulation arc ion plating device with central air inlet |
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| CN202010736213.6A CN112030116B (en) | 2020-07-28 | 2020-07-28 | Modulation arc ion plating device with central air inlet |
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| EP0801414A2 (en) * | 1996-04-12 | 1997-10-15 | Multi-Arc Inc. | Gas-controlled arc vapor deposition apparatus and process |
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| CN109468598A (en) * | 2018-11-15 | 2019-03-15 | 温州职业技术学院 | A kind of rotating excitation field cathode arc source |
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2020
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| EP0801414A2 (en) * | 1996-04-12 | 1997-10-15 | Multi-Arc Inc. | Gas-controlled arc vapor deposition apparatus and process |
| US6110540A (en) * | 1996-07-12 | 2000-08-29 | The Boc Group, Inc. | Plasma apparatus and method |
| JP2007308787A (en) * | 2006-05-22 | 2007-11-29 | Ulvac Japan Ltd | Arc vapor deposition source and film deposition apparatus |
| CN107385397A (en) * | 2017-07-24 | 2017-11-24 | 东北大学 | A kind of intelligent arc source |
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| CN112030116A (en) | 2020-12-04 |
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