CN112019198B - Fully-controlled semiconductor device packaging structure based on integrated commutation - Google Patents
Fully-controlled semiconductor device packaging structure based on integrated commutation Download PDFInfo
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- CN112019198B CN112019198B CN202010684007.5A CN202010684007A CN112019198B CN 112019198 B CN112019198 B CN 112019198B CN 202010684007 A CN202010684007 A CN 202010684007A CN 112019198 B CN112019198 B CN 112019198B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
Abstract
The present disclosure discloses a fully-controlled semiconductor device package structure based on integrated commutation, including: the device comprises a fully-controlled semiconductor device and a tube shell for packaging the fully-controlled semiconductor device; the fully-controlled semiconductor device comprises a first chip assembly, a second chip assembly, a third chip assembly, a first transition layer, a second transition layer, a third transition layer and a fourth transition layer; the cathode terminal of the first chip component is connected to the anode of the fully-controlled semiconductor device through the first transition layer; the anode terminal of the first chip assembly is connected to the cathode terminal of the second chip assembly through the second transition layer; the anode terminal of the second chip assembly is connected to the anode terminal of the third chip assembly through the third transition layer; the cathode terminal of the third chip assembly is connected to the cathode of the fully-controlled semiconductor device through the fourth transition layer; the first transition layer and the third transition layer are connected through a conductive plate.
Description
Technical Field
The disclosure belongs to the technical field of electrical equipment, and particularly relates to a fully-controlled semiconductor device packaging structure based on integrated commutation.
Background
With the development of high-voltage direct-current transmission and direct-current power grid technologies, research on power electronic devices under the application of high-capacity system disconnection becomes more and more important. However, in the development of the current high-power semiconductor power electronic device, the high-voltage high-power industrial commutation application is mostly carried out. In the current direct current breaker scheme, a power device is directly used as a large current breaking device, so that the method not only has strict requirements on the ultimate working performance and reliability of the device, but also brings great burden to the cost of the whole breaker equipment.
Disclosure of Invention
Aiming at the defects in the prior art, the present disclosure aims to provide a fully-controlled semiconductor device package structure based on integrated commutation, which has the advantages of high integration level, small volume, small stray parameter and capability of saving a large amount of structural member cost.
In order to achieve the above purpose, the present disclosure provides the following technical solutions:
a fully controlled semiconductor device package structure, comprising: the device comprises a fully-controlled semiconductor device and a tube shell for packaging the fully-controlled semiconductor device; wherein the content of the first and second substances,
the fully-controlled semiconductor device comprises a first chip assembly, a second chip assembly, a third chip assembly, a first transition layer, a second transition layer, a third transition layer and a fourth transition layer;
the cathode terminal of the first chip component is connected to the anode of the fully-controlled semiconductor device through the first transition layer;
the anode terminal of the first chip assembly is connected to the cathode terminal of the second chip assembly through the second transition layer;
the anode terminal of the second chip assembly is connected to the anode terminal of the third chip assembly through the third transition layer;
the cathode terminal of the third chip assembly is connected to the cathode of the fully-controlled semiconductor device through the fourth transition layer;
the first transition layer and the third transition layer are connected through a conductive plate.
Preferably, the packaging structure further comprises a capacitor, a controller and a current sensor which are arranged outside the tube shell; one end of the capacitor is connected to the second transition layer through the first conducting plate, and the other end of the capacitor is connected to the fourth transition layer through the second conducting plate; the controller comprises a thyristor drive and an integrated converter thyristor drive, the input end of the thyristor drive is connected to the first gate output end of the fully-controlled semiconductor device, and the output end of the thyristor drive is connected to the gate of the thyristor chip through a first gate external connection wire; the input end of the integrated commutation thyristor drive is connected to the second gate electrode output end of the full-control semiconductor device, and the output end of the integrated commutation thyristor drive is connected to the gate electrode of the integrated commutation thyristor chip through a second gate electrode external connecting wire; one end of the current sensor is connected to the integrated converter thyristor chip, and the other end of the current sensor is connected with any one of the thyristor chip, the diode chip and the capacitor.
Preferably, the first chip assembly includes a plurality of thyristor chips, each thyristor chip is pasted on the package substrate in parallel, a cathode of each thyristor chip is connected to an anode of the fully-controlled semiconductor device, and an anode of each thyristor chip is connected to the capacitor.
Preferably, the second chip assembly includes a plurality of diode chips, each diode chip is adhered to the package substrate in parallel, an anode of each diode chip is connected to an anode of the fully-controlled semiconductor device, and a cathode of each diode chip is connected to the capacitor.
Preferably, the third chip assembly includes a plurality of integrated converter thyristor chips, each integrated converter thyristor chip is pasted on the tube shell substrate in parallel, a cathode of each integrated converter thyristor chip is connected to the current sensor, and an anode of each integrated converter thyristor chip is connected to an anode of the fully-controlled semiconductor device.
Preferably, the anode and the cathode of the fully-controlled semiconductor device are both metal conductive electrodes, and the metal conductive electrodes include any one of the following materials and combinations thereof: gold, silver, copper, platinum, palladium, iridium, and alloys thereof.
Preferably, the first gate external connection line and the second gate external connection line are both conductive structures, including but not limited to any one or a combination of more of a conductive plate, a conductive sheet and a bus bar.
Preferably, the capacitor includes any one of: thin film capacitors, organic dielectric capacitors, inorganic dielectric capacitors, electrolytic capacitors, electrothermal capacitors, and air dielectric capacitors.
The present disclosure also provides a method for controlling a fully-controlled semiconductor device package structure to receive a turn-on signal, comprising the following steps:
step 1: applying a positive bias voltage between an anode and a cathode of the fully-controlled semiconductor device to enable the fully-controlled semiconductor device to be in a forward blocking state;
step 2: the first gate electrode and the second gate electrode of the fully-controlled semiconductor device are respectively driven and controlled by the thyristor to be conducted by the thyristor chip and driven and controlled by the integrated commutation thyristor to be conducted, the fully-controlled semiconductor device starts to conduct current, and the capacitor discharges through the thyristor chip and the integrated commutation thyristor chip;
and step 3: the current sensor monitors the current flowing through the fully-controlled semiconductor device, when the current reaches a set threshold value, the integrated commutation thyristor drives the integrated commutation thyristor chip to be automatically controlled to be turned off, and at the moment, the current flows through the diode chip to charge the capacitor;
and 4, step 4: after waiting for a period of time delay, the integrated commutation thyristor drives and automatically controls the conduction of the integrated commutation thyristor chip, at the moment, the fully-controlled semiconductor device enters a conduction state, and the action is only carried out once in the whole conduction process; when the current does not exceed a set threshold value, the drive does not act, and the fully-controlled semiconductor device enters a conducting state.
The present disclosure also provides a method for controlling a fully-controlled semiconductor device package structure to receive a turn-off signal, including the steps of:
step 1: when the fully-controlled semiconductor device is in a current conducting state;
step 2: and controlling the conduction of the thyristor chip by driving the first gate of the fully-controlled semiconductor device through the thyristor, starting discharging the capacitor through the thyristor chip and the integrated commutation thyristor chip at the moment, delaying to wait for 0.75 times of oscillation period, and controlling the turn-off of the integrated commutation thyristor chip by driving the second gate of the fully-controlled semiconductor device through the integrated commutation thyristor to finish the turn-off of the packaging structure of the fully-controlled semiconductor device.
Compared with the prior art, the beneficial effect that this disclosure brought does: the integrated chip and the chip drive are assembled, so that the integrated circuit has the characteristics of high integration level, small volume, small stray parameter, saving of a large amount of structural part cost and the like, and the current resonance generated by the capacitor realizes the auxiliary turn-off of the current, thereby improving the turn-off capability.
Drawings
Fig. 1 is a schematic structural diagram of a fully-controlled semiconductor device package structure based on integrated commutation according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a fully-controlled semiconductor device package structure based on integrated commutation according to another embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a fully-controlled semiconductor device package structure based on integrated commutation according to another embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a fully-controlled semiconductor device package structure based on integrated commutation according to another embodiment of the present disclosure.
Detailed Description
Specific embodiments of the present disclosure will be described in detail below with reference to fig. 1 to 4. While specific embodiments of the disclosure are shown in the drawings, it should be understood that the disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It should be noted that certain terms are used throughout the description and following claims to refer to particular components. As one skilled in the art will appreciate, various names may be used to refer to a component. The description and claims do not intend to distinguish between components that differ in noun but not in function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. The description which follows is a preferred embodiment of the invention, but is made for the purpose of illustrating the general principles of the invention and not for the purpose of limiting the scope of the invention. The scope of the present disclosure is to be determined by the terms of the appended claims.
To facilitate an understanding of the embodiments of the present disclosure, the following detailed description is to be considered in conjunction with the accompanying drawings, and the drawings are not to be construed as limiting the embodiments of the present disclosure.
In one embodiment, as shown in fig. 1, a fully-controlled semiconductor device package structure based on integrated commutation includes: the device comprises a fully-controlled semiconductor device and a tube shell for packaging the fully-controlled semiconductor device; wherein, the first and the second end of the pipe are connected with each other,
the fully-controlled semiconductor device comprises a first chip assembly, a second chip assembly, a third chip assembly, a current sensor, a first transition layer, a second transition layer, a third transition layer and a fourth transition layer;
the cathode terminal of the first chip component is connected to the anode of the fully-controlled semiconductor device through the first transition layer;
the anode terminal of the first chip assembly is connected to the cathode terminal of the second chip assembly through the second transition layer;
the anode terminal of the second chip assembly is connected to the anode terminal of the third chip assembly through the third transition layer;
the cathode terminal of the third chip assembly is connected to the cathode of the fully-controlled semiconductor device through the fourth transition layer;
the first transition layer and the third transition layer are connected through a conductive plate.
In this embodiment, through assembling integrated chip and chip drive, have that the integrated level is high, small, stray parameter is little, and save characteristics such as a large amount of structure costs, the current resonance that produces through the electric capacity realizes the supplementary shutoff to the electric current to improve the shutoff ability.
In another embodiment, the package structure further comprises a capacitor, a controller and a current sensor which are arranged outside the tube shell; one end of the capacitor is connected to the second transition layer through the first conductive plate, and the other end of the capacitor is connected to the fourth transition layer through the second conductive plate; the controller comprises a thyristor drive and an integrated converter thyristor drive, the input end of the thyristor drive is connected to the output end of a first gate pole of the full-control semiconductor device, and the output end of the thyristor drive is connected to the gate pole of the thyristor chip through a first gate pole external connecting line; the input end of the integrated commutation thyristor drive is connected to the second gate electrode output end of the full-control semiconductor device, and the output end of the integrated commutation thyristor drive is connected to the gate electrode of the integrated commutation thyristor chip through a second gate electrode external connecting wire; one end of the current sensor is connected to the integrated converter thyristor chip, and the other end of the current sensor is connected with any one of the thyristor chip, the diode chip and the capacitor.
In this embodiment, the current sensor is arranged as shown in fig. 2 to 4, and in fig. 2, one end of the current sensor is connected to the cathode of the integrated converter thyristor chip, and the other end of the current sensor is connected to the cathode of the semiconductor device together with one end of the capacitor. In fig. 3, one end of the current sensor is connected to the anode of the integrated converter thyristor chip, and the other end is connected to the anode of the diode chip. In fig. 4, one end of the current sensor is connected to the anode of the diode chip, and the other end is connected to the cathode of the thyristor chip.
In another embodiment, the first gate external connection line and the second gate external connection line are both conductive structures, including but not limited to any one or a combination of more of a conductive plate, a conductive sheet and a bus bar.
In another embodiment, the capacitor includes any one of: thin film capacitors, organic dielectric capacitors, inorganic dielectric capacitors, electrolytic capacitors, electrothermal capacitors, and air dielectric capacitors.
In another embodiment, the current sensor includes, but is not limited to, any one of or a combination of any plurality of a hall current sensor, a TMR sensor, an AMR sensor, a GMR sensor, a fiber optic current sensor.
In another embodiment, the first chip assembly includes a plurality of thyristor chips, each thyristor chip is pasted on the package substrate in parallel, the electrical connection is realized by a wire bonding technology or a crimping interconnection technology, a cathode of each thyristor chip is connected to an anode of the fully-controlled semiconductor device, and an anode of each thyristor chip is connected to the capacitor.
In another embodiment, the second chip assembly includes a plurality of diode chips, each diode chip is adhered to the package substrate in parallel, the electrical connection is realized by a wire bonding technology or a pressure welding interconnection technology, an anode of each diode chip is connected to an anode of the fully-controlled semiconductor device, and a cathode of each diode chip is connected to the capacitor.
In this embodiment, the diode chip includes, but is not limited to, any one of a power diode chip, a schottky diode chip, or a combination of any multiple of them.
In another embodiment, the third chip assembly includes a plurality of integrated converter thyristor chips, each integrated converter thyristor chip is pasted on the case substrate in parallel, the electrical connection is realized through a wire bonding technology or a crimping interconnection technology, a cathode of each integrated converter thyristor chip is connected to the current sensor, and an anode of each integrated converter thyristor chip is connected to an anode of the fully-controlled semiconductor device.
In another embodiment, the anode and the cathode of the fully-controlled semiconductor device are both metal conductive electrodes, and any one or combination of the following is included: gold, silver, copper, platinum, palladium, iridium, and alloys thereof.
In another embodiment, the present disclosure further provides a method for controlling a fully-controlled semiconductor device package structure to receive a turn-on signal, including the following steps:
step 1: applying a positive bias voltage between an anode and a cathode of the fully-controlled semiconductor device to enable the fully-controlled semiconductor device to be in a forward blocking state;
step 2: the first gate and the second gate of the fully-controlled semiconductor device are respectively driven and controlled by the thyristor to be conducted on the thyristor chip and driven and controlled by the integrated commutation thyristor to be conducted on the integrated commutation thyristor chip, the fully-controlled semiconductor device starts to conduct current, and the capacitor discharges through the thyristor chip and the integrated commutation thyristor chip;
and step 3: the current sensor monitors the current flowing through the fully-controlled semiconductor device, when the current reaches a set threshold value, the integrated converter thyristor drives the integrated converter thyristor chip to automatically control the integrated converter thyristor chip to be turned off, and at the moment, the current flows through the diode chip to charge the capacitor;
and 4, step 4: after a period of time delay, the integrated commutation thyristor drives and automatically controls the conduction of the integrated commutation thyristor chip, and at the moment, the fully-controlled semiconductor device enters a conduction state, and the action is only carried out once in the whole conduction process; when the current does not exceed a set threshold value, the drive does not act, and the fully-controlled semiconductor device enters a conducting state.
In another embodiment, the present disclosure further provides a method for controlling a fully-controlled semiconductor device package structure to receive a shutdown signal, including the following steps:
step 1: when the fully-controlled semiconductor device is in a current conducting state;
and 2, step: and controlling the conduction of the thyristor chip by driving the first gate of the fully-controlled semiconductor device through the thyristor, starting discharging the capacitor through the thyristor chip and the integrated commutation thyristor chip at the moment, delaying to wait for 0.75 times of oscillation period, and controlling the turn-off of the integrated commutation thyristor chip by driving the second gate of the fully-controlled semiconductor device through the integrated commutation thyristor to finish the turn-off of the packaging structure of the fully-controlled semiconductor device.
The basic principles of the present application have been described above with reference to specific embodiments, but it should be noted that advantages, effects, etc. mentioned in the present application are only examples and are not limiting, and the advantages, effects, etc. must not be considered to be possessed by various embodiments of the present application. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the foregoing disclosure is not intended to be exhaustive or to limit the disclosure to the precise details disclosed.
Claims (8)
1. A fully-controlled semiconductor device packaging structure based on integrated commutation comprises: the device comprises a fully-controlled semiconductor device and a tube shell for packaging the fully-controlled semiconductor device; wherein, the first and the second end of the pipe are connected with each other,
the fully-controlled semiconductor device comprises a first chip assembly, a second chip assembly, a third chip assembly, a first transition layer, a second transition layer, a third transition layer and a fourth transition layer;
the cathode terminal of the first chip component is connected to the anode of the fully-controlled semiconductor device through the first transition layer;
the anode terminal of the first chip assembly is connected to the cathode terminal of the second chip assembly through the second transition layer;
the first chip assembly comprises a plurality of thyristor chips, each thyristor chip is pasted on the tube shell substrate in parallel, the cathode of each thyristor chip is connected to the anode of the fully-controlled semiconductor device, and the anode of each thyristor chip is connected to the capacitor;
the anode terminal of the second chip assembly is connected to the anode terminal of the third chip assembly through the third transition layer;
the cathode terminal of the third chip assembly is connected to the cathode of the fully-controlled semiconductor device through the fourth transition layer;
the third chip component comprises a plurality of integrated converter thyristor chips, each integrated converter thyristor chip is pasted on the tube shell substrate in parallel, the cathode of each integrated converter thyristor chip is connected to the current sensor, and the anode of each integrated converter thyristor chip is connected to the anode of the fully-controlled semiconductor device;
the first transition layer and the third transition layer are connected through a conductive plate.
2. The package structure of claim 1, wherein the package structure further comprises a capacitor, a controller, and a current sensor disposed outside the package; one end of the capacitor is connected to the second transition layer through the first conductive plate, and the other end of the capacitor is connected to the fourth transition layer through the second conductive plate; the controller comprises a thyristor drive and an integrated converter thyristor drive, the input end of the thyristor drive is connected to the first gate output end of the fully-controlled semiconductor device, and the output end of the thyristor drive is connected to the gate of the thyristor chip through a first gate external connection wire; the input end of the integrated commutation thyristor drive is connected to the second gate electrode output end of the full-control semiconductor device, and the output end of the integrated commutation thyristor drive is connected to the gate electrode of the integrated commutation thyristor chip through a second gate electrode outer connecting line; one end of the current sensor is connected to the integrated converter thyristor chip, and the other end of the current sensor is connected with any one of the thyristor chip, the diode chip and the capacitor.
3. The package structure of claim 2, wherein the second chip assembly comprises a plurality of diode chips, each diode chip is attached in parallel on the package substrate, an anode of each diode chip is connected to an anode of the fully-controlled semiconductor device, and a cathode of each diode chip is connected to the capacitor.
4. The package structure of claim 1, wherein the anode and the cathode of the fully-controlled semiconductor device are both metal conductive electrodes, including any one of and combinations of: gold, silver, copper, platinum, palladium, iridium, and alloys thereof.
5. The package structure of claim 2, wherein the first gate external connection and the second gate external connection are each a conductive structure including, but not limited to, any one or combination of a conductive plate, a conductive sheet, and a bus bar.
6. The package structure of claim 2, wherein the capacitor comprises any one of: thin film capacitors, organic dielectric capacitors, inorganic dielectric capacitors, electrolytic capacitors, electrothermal capacitors, and air dielectric capacitors.
7. A control method for receiving a turn-on signal by the fully controlled semiconductor device package structure of claim 2, comprising the steps of:
step 1: applying a positive bias voltage between the anode and the cathode of the fully-controlled semiconductor device to enable the fully-controlled semiconductor device to be in a forward blocking state;
step 2: the first gate electrode and the second gate electrode of the fully-controlled semiconductor device are respectively driven and controlled by the thyristor to be conducted by the thyristor chip and driven and controlled by the integrated commutation thyristor to be conducted, the fully-controlled semiconductor device starts to conduct current, and the capacitor discharges through the thyristor chip and the integrated commutation thyristor chip;
and step 3: the current sensor monitors the current flowing through the fully-controlled semiconductor device, when the current reaches a set threshold value, the integrated converter thyristor drives the integrated converter thyristor chip to automatically control the integrated converter thyristor chip to be turned off, and at the moment, the current flows through the diode chip to charge the capacitor;
and 4, step 4: after a period of time delay, the integrated converter thyristor drives and automatically controls the integrated converter thyristor chip to be conducted, at the moment, the fully-controlled semiconductor device enters a conducting state, and the integrated converter thyristor drives and automatically controls the integrated converter thyristor chip to be conducted only once in the whole conducting process; when the current does not exceed the set threshold, neither the thyristor drive nor the integrated commutation thyristor drive is operated, and at the moment, the fully-controlled semiconductor device enters a conducting state.
8. A control method for receiving a turn-off signal by the fully controlled semiconductor device package structure according to claim 2, comprising the steps of:
step 1: when the fully-controlled semiconductor device is in a current conducting state;
step 2: and controlling the conduction of the thyristor chip by driving the first gate of the fully-controlled semiconductor device through the thyristor, starting discharging the capacitor through the thyristor chip and the integrated commutation thyristor chip at the moment, delaying to wait for 0.75 times of oscillation period, and controlling the turn-off of the integrated commutation thyristor chip by driving the second gate of the fully-controlled semiconductor device through the integrated commutation thyristor to finish the turn-off of the packaging structure of the fully-controlled semiconductor device.
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| JP2013106489A (en) * | 2011-11-16 | 2013-05-30 | Nissan Motor Co Ltd | Abnormality detection device |
| WO2015149579A1 (en) * | 2014-04-04 | 2015-10-08 | 广州市金矢电子有限公司 | Current monitoring type electronic arc-extinguishing apparatus |
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| US10679984B2 (en) * | 2018-07-10 | 2020-06-09 | Sanken Electric Co., Ltd. | Semiconductor device and method for forming the semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013106489A (en) * | 2011-11-16 | 2013-05-30 | Nissan Motor Co Ltd | Abnormality detection device |
| WO2015149579A1 (en) * | 2014-04-04 | 2015-10-08 | 广州市金矢电子有限公司 | Current monitoring type electronic arc-extinguishing apparatus |
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