CN112018085B - Dielectric breakdown test structure - Google Patents

Dielectric breakdown test structure Download PDF

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Publication number
CN112018085B
CN112018085B CN202011114835.1A CN202011114835A CN112018085B CN 112018085 B CN112018085 B CN 112018085B CN 202011114835 A CN202011114835 A CN 202011114835A CN 112018085 B CN112018085 B CN 112018085B
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node
tested
dielectric breakdown
pad
capacitor structure
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CN112018085A (en
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周山
王丽雅
俞佩佩
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Jingxincheng Beijing Technology Co Ltd
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Jingxincheng Beijing Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/14—Circuits therefor, e.g. for generating test voltages, sensing circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Abstract

The invention provides a dielectric breakdown test structure, which is characterized in that a bypass circuit is conducted through the change of leakage current of a capacitor structure to be tested, and the whole circuit is disconnected through the conduction of the bypass circuit, so that the phenomenon that a weak point of the capacitor structure to be tested is burnt due to hard breakdown in the test process is avoided, meanwhile, a certain leakage current can be generated at the position of the weak point of the capacitor structure to be tested, the capacitor structure to be tested can further perform failure analysis in the test process, the defect of the capacitor structure to be tested can be found, and the pertinence improvement is made.

Description

Dielectric breakdown test structure
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a dielectric breakdown testing structure.
Background
The capacitor structure is an important structure in the reliability evaluation of a semiconductor integrated circuit, and can be used for the reliability evaluation of a gate oxide dielectric layer, a metal-insulator-metal (MIM) dielectric layer and a metal-oxide-metal (MOM) dielectric layer of a metal-oxide semiconductor field effect transistor (MOSFET).
Time Dependent Dielectric Breakdown (TDDB) testing is an important reliability assessment method by which the time at which breakdown occurs in a medium can be obtained to calculate the reliability distribution and lifetime. However, the TDDB test of the capacitor structure takes a long time and requires a large number of samples to be tested, and therefore, most of the TDDB tests require a plurality of capacitor structures to be connected in parallel for testing in order to shorten the test time. Before the capacitor structure is subjected to thermal breakdown, the leakage current of the capacitor structure is increased rapidly, so that a test machine in a parallel test mode cannot respond in time, the capacitor structure is easy to be subjected to thermal breakdown and burnt, and when the burnt capacitor structure cannot be subjected to subsequent failure analysis, the weak point of the capacitor structure is positioned and further failure analysis is carried out, so that the defect of the capacitor structure cannot be found, and the targeted improvement cannot be carried out.
Disclosure of Invention
The invention aims to provide a dielectric breakdown testing structure which can avoid the burning of the weak point of a capacitor structure to be tested due to hard breakdown in the TDDB testing process, and meanwhile, the weak point position of the capacitor structure to be tested can generate certain leakage current in the TDDB testing process, so that the capacitor structure to be tested can be further subjected to failure analysis, the defects of the capacitor structure to be tested can be found, and the pertinence is improved.
In order to solve the technical problem, the invention provides a dielectric breakdown testing structure, which comprises a main circuit, a bypass circuit, a first pad, a second pad and a first switch, wherein the main circuit and the bypass circuit are connected in parallel;
when a time-dependent dielectric breakdown test is started, applying constant voltage to the first bonding pad and the second bonding pad, enabling the first switch to be conducted, the main circuit to be conducted and the bypass circuit to be disconnected when the leakage current of the capacitor structure to be tested does not reach a preset threshold current value;
after a period of time under constant positive voltage, the leakage current of the capacitor structure to be tested reaches a preset threshold current value, the main circuit is conducted, and the bypass circuit is conducted;
when the bypass circuit is switched on, the first switch is switched off, the main circuit is switched off, and the bypass circuit is switched off.
Optionally, the circuit further includes a first node and a second node, the main circuit and the bypass circuit are connected in parallel between the first node and the second node, the first node is further connected to the first pad, and the second pad is connected to the second node through the first switch.
Further, the main circuit comprises a capacitor structure to be tested and a leakage detection unit, the capacitor structure to be tested and the leakage detection unit are connected in series, a third node is arranged between the capacitor structure to be tested and the leakage detection unit, the capacitor structure to be tested is connected between the first node and the third node, and the leakage detection unit is connected between the second node and the third node; the leakage detection unit is used for detecting the leakage condition of the capacitor structure to be tested in the time-dependent dielectric breakdown test process.
Further, the capacitor structure to be tested comprises a gate oxide capacitor, an MIM capacitor and an MOM capacitor.
Further, the leakage detecting unit includes a leakage detecting resistor.
Further, the bypass circuit includes a current limiting unit and a second switch, and the current limiting unit and the second switch are connected in series with each other.
Furthermore, one end of the current limiting unit is connected to the first node, and the other end of the current limiting unit is connected to the second switch.
Further, the second switch includes an NMOS transistor, a drain of the NMOS transistor is connected to the other end of the current limiting unit, a source of the NMOS transistor is connected to the second node, and a gate of the NMOS transistor is connected to the third node.
Optionally, the first pad is connected to a power supply, and the second pad is grounded.
Optionally, the capacitor structure to be tested further includes a third pad, the third pad is connected to the third node, and the first pad and the third pad are electrically connected pads of the capacitor structure to be tested during electrical failure analysis after a time-dependent dielectric breakdown test.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a dielectric breakdown testing structure which comprises a main circuit, a bypass circuit, a first bonding pad, a second bonding pad and a first switch, wherein the main circuit and the bypass circuit are connected in parallel; when a time-dependent dielectric breakdown test is started, applying constant voltage to the first bonding pad and the second bonding pad, enabling the first switch to be conducted, the main circuit to be conducted and the bypass circuit to be disconnected when the leakage current of the capacitor structure to be tested does not reach a preset threshold current value; after a period of time under constant positive voltage, the leakage current of the capacitor structure to be tested reaches a preset threshold current value, the main circuit is conducted, and the bypass circuit is conducted; when the bypass circuit is switched on, the first switch is switched off, the main circuit is switched off, and the bypass circuit is switched off. The bypass circuit is conducted through the change of the leakage current of the capacitor structure to be tested, and the whole circuit is disconnected through the conduction of the bypass circuit, so that the weak point of the capacitor structure to be tested is prevented from being burnt out due to hard breakdown in the testing process, and meanwhile, a certain leakage current can be generated at the weak point position of the capacitor structure to be tested in the testing process, so that the capacitor structure to be tested can be further subjected to failure analysis, the defects of the capacitor structure to be tested can be found, and the pertinence improvement can be made.
Drawings
FIG. 1 is a graph of current versus time for a dielectric breakdown test structure for a TDDB test;
FIG. 2 is a schematic diagram of a dielectric breakdown test structure according to an embodiment of the invention;
fig. 3a-3c are schematic diagrams of a dielectric breakdown testing structure in an operating state according to an embodiment of the invention.
Detailed Description
FIG. 1 is a graph of current versus time for a dielectric breakdown test structure for a TDDB test. As shown in fig. 1, in the TDDB testing process, leakage current of a weak point of 10 parallel capacitor structures to be tested gradually increases, and when the leakage current rapidly exceeds a preset threshold current value (for example, 0.01A), the capacitor structures to be tested are hard-punctured and thus burned out. During subsequent electrical failure analysis, the positions of weak points cannot be found at all due to serious damage of the capacitor structure to be tested, so that the defects of the capacitor structure cannot be found, and targeted improvement cannot be made.
Therefore, the invention provides a dielectric breakdown testing structure, which can realize real-time detection of leakage current and timely cut off a circuit when the leakage current reaches a preset value in a TDDB testing process, so that hard breakdown and burning of a capacitor structure to be tested are avoided, failure analysis can be performed on the capacitor structure to be tested after the TDDB testing is finished, and position positioning and cross-section morphology analysis are performed on weak points of the capacitor structure to be tested, so that defects of the capacitor structure to be tested are found and improved.
A dielectric breakdown testing structure of the present invention will now be described in more detail with reference to the schematic drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the present invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The core idea of the invention is to provide a dielectric breakdown testing structure, which comprises a main circuit, a bypass circuit, a first pad, a second pad and a first switch, wherein the main circuit and the bypass circuit are connected in parallel, the first pad, the main circuit and the bypass circuit after being connected in parallel, and the first switch and the second pad are sequentially connected in series, and the main circuit comprises a capacitor structure to be tested;
when a time-dependent dielectric breakdown test is started, applying constant voltage to the first bonding pad and the second bonding pad, enabling the first switch to be conducted, the main circuit to be conducted and the bypass circuit to be disconnected when the leakage current of the capacitor structure to be tested does not reach a preset threshold current value;
after a period of time under constant positive voltage, the leakage current of the capacitor structure to be tested reaches a preset threshold current value, the first switch is switched on, the main circuit is switched on, and the bypass circuit is switched on;
when the bypass circuit is switched on, the first switch is switched off, the main circuit is switched off, and the bypass circuit is switched off.
Fig. 2 is a schematic diagram of a dielectric breakdown test structure according to the present embodiment. As shown in fig. 2, the present embodiment provides a dielectric breakdown test structure that is time-dependent. The dielectric breakdown test structure is provided with a capacitor structure to be tested, and in the TDDB test process, a plurality of dielectric breakdown test structures are connected in parallel on a TDDB test machine table, so that each capacitor structure C to be testedtestAnd the capacitor structures to be tested are connected in parallel, so that the plurality of capacitor structures to be tested can be tested simultaneously, and the test time of the TDDB test is shortened.
Each of the dielectric breakdown test structures includes a main circuit 10, a bypass circuit 20, a first Pad1, a second Pad2, a third Pad3, a first switch, a first node B, and a second node C. The main circuit 10 and the bypass circuit 20 are connected in parallel, and the first Pad1, the main circuit 10 and the bypass circuit 20 after being connected in parallel, and the first switch and the second Pad2 are sequentially connected in series, specifically, the main circuit 10 and the bypass circuit 20 are connected in parallel at two nodes, namely a first node B and a second node C (that is, the main circuit 10 and the bypass circuit 20 are connected in parallel between the first node B and the second node C), the first node B serves as a first parallel port of the dielectric breakdown test structure, the first Pad1 is connected to the first node B, the second node C serves as a second parallel port of the dielectric breakdown test structure, and the second Pad2 is connected to the second node C through the first switch.
On the TDDB tester table, the first bonding pads Pad1 of the dielectric breakdown testing structures are connected in parallel, and the second bonding pads Pad2 of the dielectric breakdown testing structures are connected in parallel, so that the dielectric breakdown testing structures are connected in parallel. The first Pad1 and the second Pad2 are used for applying voltage during TDDB test so as to test the capacitor structure C to be testedtestA breakdown voltage is provided, for example, one of the first Pad1 and the second Pad2 is connected to a power source, and the other is connected to ground. The Pad1 and the Pad3 are used for electrically connecting the pads during electrical failure analysis after the TDDB test is finished. In the present embodiment, the first Pad1 is connected to a constant positive voltage V during the TDDB test+And the second Pad2 is grounded.
In the capacitor structure C to be testedtestWhen the leakage current exceeds a preset threshold current value, the first switch cuts off the circuits (main circuit and bypass circuit) of the whole dielectric breakdown test structure so as to avoid the capacitor structure C to be tested of the dielectric breakdown test structuretestA hard breakdown occurs. In this embodiment, the first switch is, for example, a fuse, a specification value of a fusing current of the fuse is smaller than a conducting current of the bypass circuit 20, and the capacitor structure C to be tested istestWhen the leakage current exceeds a preset threshold current value, the bypass circuit 20 is switched on, the fuse is switched off, and the circuit of the whole dielectric breakdown test structure is cut off, at the moment, the main circuit and the bypass circuit are both switched off, so that the capacitor structure C to be tested is avoidedtestTake place ofHard breakdown.
The main circuit 10 comprises a capacitor structure C to be testedtestAnd a leakage detection unit for detecting leakage of the capacitor structure C to be testedtestAnd the leakage detecting unit are connected in series with each other. The capacitor structure C to be testedtestIncluding but not limited to gate oxide capacitance, MIM capacitance, and MOM capacitance. The electric leakage detection unit is used for detecting the capacitor structure C to be tested in the TDDB test processtestThe leakage condition of (1). The capacitor structure C to be testedtestAnd the leakage detecting unit, and a third node a connected to the third Pad 3. The capacitor structure C to be testedtestThe leakage detection unit is connected between the second node C and the third node A. In this embodiment, the leakage detecting unit may be a leakage detecting resistor RDThe voltage of the third node A is the capacitor structure C to be testedtestLeakage current and leakage detection resistor RDThe product of (a).
The bypass circuit 20 is used to provide a current that can blow a fuse. The bypass circuit comprises a current limiting unit and a second switch, and the current limiting unit and the second switch are connected in series. The current limiting unit is used for limiting the current when the bypass circuit is conducted, and the current limiting unit is a current limiting resistor RLThe resistance value of the fuse can enable the current when the bypass circuit is conducted to fuse the fuse, so that the main circuit and the bypass circuit can be cut off in time before leakage current is generated and sharply increased. One end of the current limiting unit is connected with the first node B, and the other end of the current limiting unit is connected with the second switch; the second switch includes a MOS transistor, such as an NMOS transistor TNSaid NMOS transistor TNIs connected to the other end of the current limiting unit, the NMOS transistor TNIs connected to the second node C, the NMOS transistor TNIs connected to the third node a. Since the NMOS transistor TNI.e. the voltage of the third node a, and thus the NMOS transistor TNThe threshold voltage of (2) is set according to the requirement, and when the threshold voltage is changed,to not affect the capacitance structure C to be testedtestThe threshold leakage current can change the leakage detection resistor RDThe resistance value of (c).
As shown in fig. 3a, at the beginning of the TDDB test, a constant positive voltage V is connected to the first Pad1+The second Pad2 is grounded due to the capacitance structure C to be testedtestDoes not generate obvious leakage current (namely the capacitor structure C to be tested)testNo leakage current has been generated or the capacitor structure C to be testedtestThe generated leakage current is smaller than the preset threshold current value), the leakage current detection resistor RDIs insufficient, i.e., the voltage of the third node a does not reach the NMOS transistor TNWhen the first switch is turned on, the main circuit is turned on, and the bypass circuit is turned off; as shown in fig. 3b, at a constant positive voltage V+After a period of time, the capacitor structure C to be testedtestThe leakage of the weak point begins to increase gradually, and the capacitor structure C to be testedtestVoltage of (3) gradually decreases, and leakage detecting resistor RDIs gradually increased when the capacitor structure C to be tested istestWhen the leakage current reaches a preset threshold current value, the leakage detection resistor RDIs increased and it is achieved that the NMOS transistor T can be turned onNAt the threshold voltage of (2), the NMOS transistor TNStarting the circuit, and simultaneously conducting the bypass circuit; as shown in fig. 3c, in the current limiting resistor RLUnder the current limiting effect, the conduction current of the bypass circuit is larger than or equal to the specification value of the fusing current of the fuse, so that when the bypass circuit is conducted, the fuse is disconnected, and meanwhile, the whole circuit is disconnected, so that the capacitor structure C to be tested is prevented from being testedtestA hard breakdown occurs and burns out.
After the TDDB is finished, the capacitor structure C to be testedtestA certain leakage current exists at weak points, and the capacitance structure C to be tested is connected with the first Pad1 and the third Pad3testPerforming electrical failure analysis to locate the capacitor structure C to be testedtestAnd the location of the leakage current (location of the weak point), and the cross-sectional shape of this locationAnd analyzing the appearance so as to know the defects of the weak points, thereby facilitating the subsequent targeted improvement.
In the present embodiment, it is assumed that a constant positive voltage V is connected to the first Pad1+=15V, the second Pad2 is grounded, and the leakage detection resistor R is connected to the groundD=1M Ω, NMOS transistor TNThreshold voltage V ofthAnd the specification of fuse fusing current is 0.01A for = 1V. At the beginning of TDDB test, due to the capacitor structure C to be testedtestNo obvious leakage current, leakage detection resistor RDThe voltage of the third node A is not enough, namely the voltage of the third node A does not reach 1V, the main circuit is conducted, and the bypass circuit is disconnected; after a period of time under the voltage of 15V, the capacitor structure C to be testedtestThe leakage of the weak point starts to increase gradually, and the capacitor structure C to be testedtestVoltage of (3) gradually decreases, and leakage detecting resistor RDIs gradually increased when the capacitor structure C to be tested istestIncrease the leakage current to 1 x 10-6At A, the third node A (leakage detecting resistor R)D) To 1V, the NMOS transistor TNStarting the circuit, and simultaneously conducting the bypass circuit; in the current limiting resistor RLUnder the current limiting effect, the fuse is disconnected and the whole circuit is disconnected because the conducting current of the bypass circuit is larger than 0.01A.
The dielectric breakdown test structure provided by the invention can be used for further performing interface analysis on dielectric layers of samples with abnormal electrical failure, bimodal distribution and the like during reliability evaluation (such as TDDB test) so as to find out corresponding failure reasons and mechanisms and provide a direction for improving the manufacturing process.
In summary, according to the dielectric breakdown test structure provided by the invention, when the leakage current of the capacitor structure to be tested reaches the preset threshold current value, the first switch is turned on, the main circuit is turned on, and the bypass circuit is turned on; after the bypass circuit is switched on, the first switch is switched off, the main circuit is switched off, and the bypass circuit is switched off, so that the situation that the weak point of the capacitor structure to be tested is burnt out due to hard breakdown in the testing process is avoided, meanwhile, the weak point position of the capacitor structure to be tested can generate certain leakage current in the testing process, the capacitor structure to be tested can be further subjected to failure analysis, the defect of the capacitor structure to be tested can be found, and the pertinence is improved.
Furthermore, unless otherwise specified or indicated, the descriptions of the terms "first," "second," "third," and the like in the specification are only used for distinguishing various components, elements, steps, and the like in the specification, and are not used for indicating logical relationships or sequential relationships among the various components, elements, steps, and the like.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.

Claims (9)

1. A dielectric breakdown testing structure is characterized by comprising a main circuit, a bypass circuit, a first pad, a second pad and a first switch, wherein the main circuit and the bypass circuit are connected in parallel, the first pad, the main circuit and the bypass circuit after being connected in parallel, and the first switch and the second pad are sequentially connected in series, wherein the main circuit comprises a capacitor structure to be tested; the bypass circuit comprises a current limiting unit and a second switch, and the current limiting unit and the second switch are connected in series;
when a time-dependent dielectric breakdown test is started, applying constant voltage to the first bonding pad and the second bonding pad, enabling the first switch to be turned on, enabling the main circuit to be turned on and enabling the bypass circuit to be turned off when the leakage current of the capacitor structure to be tested does not reach a preset threshold current value;
after a period of time under constant positive voltage, the leakage current of the capacitor structure to be tested reaches a preset threshold current value, the main circuit is conducted, and the bypass circuit is conducted;
when the bypass circuit is switched on, the first switch is switched off, the main circuit is switched off, and the bypass circuit is switched off.
2. The dielectric breakdown test structure of claim 1, further comprising a first node and a second node, the main circuit and the bypass circuit connected in parallel between the first node and the second node, and the first node further connected to the first pad, the second pad connected to the second node through the first switch.
3. The dielectric breakdown testing structure of claim 2, wherein the main circuit includes the capacitor structure to be tested and a leakage detecting unit, the capacitor structure to be tested and the leakage detecting unit are connected in series with each other, a third node is provided between the capacitor structure to be tested and the leakage detecting unit, the capacitor structure to be tested is connected between the first node and the third node, and the leakage detecting unit is connected between the second node and the third node; the leakage detection unit is used for detecting the leakage condition of the capacitor structure to be tested in the time-dependent dielectric breakdown test process.
4. The dielectric breakdown test structure of claim 3, wherein the capacitance structure under test comprises a gate oxide capacitance, a MIM capacitance, and a MOM capacitance.
5. The dielectric breakdown test structure of claim 4, wherein the leakage detecting unit includes a leakage detecting resistor.
6. The dielectric breakdown testing structure of claim 5, wherein one end of the current limiting unit is connected to the first node, and the other end is connected to the second switch.
7. The dielectric breakdown test structure of claim 6, wherein the second switch comprises an NMOS transistor, a drain of the NMOS transistor is connected to the other end of the current limiting unit, a source of the NMOS transistor is connected to the second node, and a gate of the NMOS transistor is connected to the third node.
8. The dielectric breakdown test structure of claim 1, wherein the first pad is connected to a power supply and the second pad is grounded.
9. The dielectric breakdown testing structure of claim 3, further comprising a third pad, the third pad connecting the third node, the first pad and the third pad being electrical connection pads for electrical failure analysis of the capacitive structure under test after a time-dependent dielectric breakdown test.
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CN112327120B (en) * 2021-01-06 2021-07-23 乐清海创智能科技有限公司 Capacitor breakdown resistance detection system
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