CN112018000B - Device with crystal structure detects and normal position restoration function - Google Patents
Device with crystal structure detects and normal position restoration function Download PDFInfo
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- CN112018000B CN112018000B CN202010783693.1A CN202010783693A CN112018000B CN 112018000 B CN112018000 B CN 112018000B CN 202010783693 A CN202010783693 A CN 202010783693A CN 112018000 B CN112018000 B CN 112018000B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The invention discloses a device with crystal structure detection and in-situ repair functions, which adopts continuous laser to excite and collect the scattering spectrum of a semiconductor film material, can rapidly and nondestructively judge the crystal quality of the whole and local areas of the semiconductor film material, and then radiates the area with poor crystal quality in the semiconductor film material by ultrashort pulse high-energy laser beams such as picoseconds and femtoseconds, so as to excite the atoms in the corresponding area of the film material to be reconstructed, and finally realize the in-situ repair of the crystal structure in the detection area of the semiconductor film material. Based on the characteristics of short action time, small heat influence range and high energy density of the ultrashort pulse laser, the device can rapidly and pertinently realize the repair of the surface lattice damage of the large-size semiconductor film material and improve the crystal quality of the large-size semiconductor film material by combining the control of the atmosphere and the temperature and pressure conditions, is particularly suitable for doping the semiconductor film material, can effectively improve the uniformity and the crystal quality of the large-size semiconductor film material, and optimizes the process performance of the film.
Description
Technical Field
The invention relates to the field of semiconductor thin film materials, in particular to a device with crystal structure detection and in-situ repair functions.
Background
Chip manufacturing is the source of development of high and new technology industries, and semiconductor thin film materials lay the foundation of development of the high and new technology industries, and have important application prospects in the fields of integrated circuits, high-density storage, display illumination, power electronics, sensors, detectors and the like. With the further development of wide bandgap semiconductor materials such as diamond, gallium nitride, silicon carbide, aluminum nitride and the like, modern semiconductor devices are expected to be capable of working in harsh environments such as higher frequency, higher power and higher temperature, but the requirements on the quality and uniformity of semiconductor thin film materials are also higher. In the epitaxial growth and doping processes of semiconductor film materials, defects are difficult to avoid, and how to find and repair the defects is a key problem of improving the yield of prepared films and guaranteeing the reliability of manufactured devices.
At present, aiming at crystal defects of a semiconductor thin film material, the existing method mainly aims at carrying out heat treatment on the whole thin film material or carrying out radiation treatment on a local area of the thin film material by adopting pulse laser, however, the distribution of the crystal defects on the surface of a large-size semiconductor thin film material is often not uniform, and the whole heat treatment cannot carry out more efficient targeted repair on the local area of the thin film material according to the individual difference of the thin film material. Although the pulse laser radiation can repair the crystal defects in the local area of the semiconductor thin film material, the detection of the crystal structure and the repair process of the defects are usually carried out separately, the accurate positioning on the surface of the large-size semiconductor thin film material is difficult to realize, and the repair process has no pertinence and high efficiency. In addition, the existing overall heat treatment means mainly adopts low temperature, and the peak power of the pulse laser radiation treatment is relatively low, so that the repair effect of the wide bandgap semiconductor material with high bonding energy, such as diamond, gallium nitride, silicon carbide, aluminum nitride and the like, is very limited.
Disclosure of Invention
In order to solve the problems, the invention provides a device with crystal structure detection and in-situ repair functions, which can rapidly and nondestructively judge the crystal quality of the whole and local areas of a semiconductor film material through a scattering spectrum of the semiconductor film material, further carry out radiation treatment on the areas with poor crystal quality on the surface of the material through ultrashort pulse high-energy laser beams such as picoseconds and femtoseconds and the like, and excite atoms in the corresponding areas to reconstruct, thereby accurately and efficiently realizing in-situ repair on the areas with crystal lattice damage on the surface of the semiconductor film material, improving the crystal quality of the semiconductor film material, being particularly suitable for doping the semiconductor film material, effectively improving the uniformity and the crystal quality of the semiconductor film material, optimizing the technological performance of the film and improving the yield of the prepared semiconductor film material.
A device with crystal structure detection and in-situ repair functions comprises a laser source, a laser optical path system, an illumination light source, an illumination optical path system, an image and spectrum acquisition system, a vacuum system, an air path system, an XYZ three-axis translation table, a cold and hot table and a diamond pressure cavity.
The laser source comprises an optical parametric amplifier, the laser source can emit continuous laser and ultrashort pulse laser, the continuous laser is applied to excitation of a scattering spectrum on the surface of a semiconductor film material, and the ultrashort pulse laser is applied to in-situ repair of a crystal lattice damage area on the surface of the semiconductor film material. The optical parametric amplifier adopts one of the prior art.
In the device with the crystal structure detection and in-situ repair functions, the continuous laser and the ultrashort pulse laser are combined by the reflecting mirror and the dichroic mirror in the laser path system, and then are focused on the surface of the semiconductor thin film material by the optical lens.
According to the device with the crystal structure detection and in-situ repair functions, the illumination light source is a white light source, and the white light passes through the reflecting mirror, the second dichroic mirror and the third dichroic mirror in the illumination light path system and is focused on the surface of the sample through the optical lens.
The device with the crystal structure detection and in-situ repair functions comprises the image and spectrum acquisition system, the CMOS camera, the movable reflector, the high-pass filter, the isosceles prism, the diffraction grating and the spectrum CCD, and has two working modes of image acquisition and spectrum acquisition. The CMOS camera can receive white light signals reflected and scattered by the surface of the semiconductor film material in an image acquisition mode, so that the surface of the semiconductor film material can be observed and positioned. In the spectrum acquisition mode, continuous laser excites a scattering spectrum on the surface of a semiconductor thin film material, and a spectrum signal enters a spectrum CCD after being split by a high-pass filter and a diffraction grating, so that the crystal structure of a specific area on the surface of the spectrum CCD can be detected.
The vacuum system and the gas circuit system comprise a vacuum cavity, a gas cylinder, a gas flowmeter, a single-way gas valve control, a gas circuit main valve, a gas pressure sensor, a butterfly control valve and a molecular pump pipelineValve control, mechanical pump and molecular pump, and vacuum pumping is performed by combining the mechanical pump and the molecular pump, and the vacuum degree of the vacuum cavity can reach 10-4Pa, and inert gas, reducing gas and oxidizing gas can be filled into the vacuum cavity through the gas path system, so that the atmosphere of the environment where the semiconductor thin film material is located is changed. Wherein, the gas pressure in the vacuum cavity can be 10 by adjusting the opening and closing of the gas flowmeter and the butterfly control valve5Continuously adjustable in Pa range.
In the device with the crystal structure detection and in-situ repair functions, the XYZ triaxial translation stage can translate in three directions of the X axis, the Y axis and the Z axis with the precision of +/-0.3 μm, the optical focus on the surface of the semiconductor thin film material can be adjusted through the Z axis translation, and different areas of the surface of the semiconductor thin film material can be scanned through the X axis translation and the Y axis translation, so that the semiconductor thin film material can be observed, detected and repaired in a large range.
According to the device with the crystal structure detection and in-situ repair functions, the cold and hot table and the diamond pressing cavity can adjust the temperature and pressure conditions of the environment where the semiconductor thin film material is located, wherein the cold and hot table is used for controlling the temperature through heating of a resistance wire and cooling of liquid nitrogen, and the diamond pressing cavity applies pressure to the local area of the surface of the thin film material through the diamond pressing anvil.
Further, in the above apparatus with crystal structure detection and in-situ repair functions, the continuous laser source is a monochromatic laser, which may be ultraviolet, visible or near-infrared light, such as 325nm ultraviolet laser, 633nm visible laser or 980nm near-infrared laser, and its output power is 0-1W.
Further, in the above apparatus with crystal structure detection and in-situ repair functions, the wavelength of the laser output by the ultrashort pulse laser source is in the near infrared range (> 700 nm), such as 1030nm, 1064nm, 1550nm or 780nm, the average output power is 10mW-40W, and the pulse width can be femtosecond, picosecond or nanosecond. The wavelength of the laser output by the ultrashort pulse laser source can be continuously adjusted through the optical parametric amplifier, and the ultrashort pulse laser wavelength input into the laser optical path system is in the range of 210-2600 nm.
Furthermore, in the device with the crystal structure detection and in-situ repair functions, the output power and action time of the continuous laser and the ultrashort pulse laser can be further adjusted through a Neutral Density (ND) optical filter (100% -0.01%) and an optical shutter (more than or equal to 1 ns) in a laser optical path system.
Further, according to the device with the crystal structure detection and in-situ repair functions, the continuous laser and the ultrashort pulse laser are in a confocal state after passing through the laser optical path system, and the laser optical path system and the illumination optical path system are in a coaxial confocal state all the time.
Furthermore, after the observation and the positioning in the image acquisition mode and the detection in the spectrum acquisition mode are finished, the device with the crystal structure detection and in-situ repair functions can switch the laser light source and carry out in-situ repair on the corresponding area on the surface of the semiconductor thin film material through the ultrashort pulse laser.
Further, the device with the crystal structure detection and in-situ repair functions can observe, detect and repair the semiconductor thin film material with the size of 0.1-100mm and the thickness of 0.000001-10mm by moving the XYZ three-axis translation stage.
Further, the cold and hot table is arranged on the XYZ three-axis translation table as an accessory and can be disassembled, and the temperature control range of the cold and hot table is-196 ℃ to 1200 ℃.
Further, in the device with crystal structure detection and in-situ repair functions, the diamond pressure cavity is used as an accessory to be installed on the cold and hot table and can be disassembled, and a pressure environment of 0.0001-5.5 GPa can be generated on a local area of the surface of the semiconductor film material.
Further, the device with the crystal structure detection and in-situ repair functions further comprises a controller, and the controller controls the normal operation of the whole device.
Further, in the above device with the crystal structure detection and in-situ repair functions, optical components of the device may be connected by using a sleeve at the periphery of an optical path or may be transmitted by using an optical fiber after coupling optical signals, or may be exposed in a gas environment or vacuum without connection.
The invention has the beneficial effects that: the scattering spectrum of the semiconductor film material is excited by continuous laser, the crystal quality of the whole and local areas of the semiconductor film material can be judged rapidly and nondestructively, and then areas with poor crystal quality of the surface of the semiconductor film material can be subjected to radiation treatment by ultrashort pulse high-energy laser beams such as picoseconds and femtoseconds, atoms in the corresponding areas are excited to be reconstructed, so that the areas with lattice damage on the surface of the semiconductor film material can be repaired in situ accurately and efficiently. Based on the characteristics of short action time, small heat influence range and high energy density of the ultrashort pulse laser, and combined with the control of atmosphere and temperature and pressure conditions, the method can quickly and pertinently realize the detection and in-situ repair of the surface lattice damage of the large-size semiconductor film material, improve the crystal quality of the large-size semiconductor film material, is particularly suitable for doping the semiconductor film material, can effectively improve the uniformity and the crystal quality of the large-size semiconductor film material, optimizes the technological performance of the film, and improves the yield of the prepared semiconductor film material.
Drawings
FIG. 1 is a flow chart of the operation of a device with crystal structure detection and in-situ repair functions;
FIG. 2 is a schematic structural diagram of a device with crystal structure detection and in-situ repair functions according to the present invention;
FIG. 3 is an in-situ repair of a selected area of a high energy phosphorous ion implanted diamond sample using an ultra short pulse laser beam, the optical image of the repaired area being compared to the optical image of the unrepaired area;
fig. 4 is a diagram showing in-situ repair of a selected region of a diamond sample implanted with high-energy phosphorus ions by using an ultrashort pulse laser beam, where (a) is a raman scattering spectrum of an original region and (B) is a raman scattering spectrum of a repaired region.
In the figure, 1, a continuous laser source, 2, an ultra-short pulse laser source, 3, an optical parametric amplifier, 4, a reflector, 5, a first dichroic mirror, 6, a Neutral Density (ND) filter, 7, an optical shutter, 8, a second dichroic mirror, 9, an illumination light source, 10, a reflector, 11, a third dichroic mirror, 12, an optical lens, 13, a vacuum cavity, 14, a quartz window, 15, an XYZ three-axis translation stage, 16, a cooling and heating stage, 17, a diamond pressure cavity, 18, a sample, 19, a gas cylinder, 20, a single-path gas valve control, 21, a gas path main valve, 22, a gas pressure sensor, 23, a butterfly control valve, 24, a molecular pump pipeline valve control, 25, a mechanical pump, 26, a molecular pump, 27, a movable reflector, 28, a CMOS camera, 29, a butterfly filter, 30, an isosceles prism, 31, a diffraction grating, 32, a spectral CCD, 33, and a gas flowmeter are shown.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and examples, it being understood that the examples described are only a part of the invention and are not intended to be exhaustive. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
The embodiment of the invention provides a device with crystal structure detection and in-situ repair functions. Referring to fig. 2, during the operation of the device, the surface of the semiconductor thin film material is observed and positioned by adopting an image acquisition mode. As shown in fig. 1, an illumination light source 9 emits white light, which is focused through a quartz window 14 and irradiated onto a semiconductor thin film sample 18 placed on an XYZ three-axis translation stage 15 through a reflecting mirror 10, a second dichroic mirror 8, a third dichroic mirror 11, and an optical lens 12. The light signal reflected and scattered by the surface of the semiconductor thin film sample 18 is captured by the CMOS camera 28 through the third dichroic mirror 11 and the movable mirror 27.
Further, the XYZ stage 15 can adjust the optical focus of the surface of the sample 18 by adjusting the Z-axis movement, and can also adjust the XY-axis movement to observe different areas of the surface of the sample 18.
Further, the sample 18 may be placed on the cold-hot stage 16 or in the diamond press chamber 17, and the cold-hot stage 16 may be mounted on the XYZ triaxial translation stage 15, and the diamond press chamber 17 may be mounted on the cold-hot stage 16.
Further, the movable mirror 27 is moved to a position away from the CMOS camera 28 so that the optical signal reflected by the third dichroic mirror 11 can directly pass through the high-pass filter 29.
In the above embodiment, after the surface of the semiconductor thin film material is observed and positioned, the spectrum collection mode is adopted to detect the crystal structure of the selected area on the surface of the thin film material. The continuous laser source 1 emits light with a wavelength lambdacwThe laser light enters a Neutral Density (ND) filter 6 and an optical shutter 7 through a reflecting mirror 4 and a first dichroic mirror 5, and then is focused and irradiated on the surface of a sample 18 through a second dichroic mirror 8, a third dichroic mirror 11, an optical lens 12 and a quartz window 14, so as to excite the scattering spectrum of the observation region. In the spectrum collection mode, the movable mirror 27 is moved away from the CMOS camera 28, and the spectrum signal excited on the surface of the sample 18 is reflected by the third dichroic mirror 11 into the high-pass filter 29. The filtered spectrum signal is reflected to the diffraction grating 31 through the isosceles prism 30 to be split, and then returns to the isosceles prism 30 to be reflected to the spectrum CCD 32. Wherein λcwCw in (1) represents continuous wave.
Preferably, the filtering wavelength of the high-pass filter 29 is such as to match the lasing wavelength λ of the emission of the continuous laser source 1cwThe same is true.
Preferably, the filtering intensity (100% -0.01%) of a Neutral Density (ND) filter and the opening and closing time of an optical shutter (more than or equal to 1 ns) are adjusted according to the signal intensity of a scattering spectrum of a thin film material.
In the above embodiment, after the crystal structure of the selected region on the surface of the semiconductor thin film material is detected, whether the selected region has a lattice defect is determined according to the peak position and the full width at half maximum of the characteristic peak in the corresponding scattering spectrum. And if the crystal structure of the detection area is intact, entering an image acquisition mode, adjusting the XYZ three-axis translation table, and observing other undetected areas on the surface of the semiconductor film material. If the half-height width of the characteristic peak in the scattering spectrum of the selected area on the surface of the semiconductor film material is serious or the characteristic peak disappears, the selected area is radiated by using ultrashort pulse laser under the conditions of proper gas atmosphere, temperature and pressure, atoms in the area are excited to be reconstructed, and then the lattice damage existing in the selected area is repaired in situ.
In the above embodiment, when the ultrashort pulse laser is used to repair the detection area on the surface of the semiconductor thin film material, the ultrashort pulse laser source 2 emits the light with the wavelength λpwAfter passing through the optical parametric amplifier 3, the ultrashort pulse laser wavelength is converted into the target wavelength lambdapwtThe optical fiber enters a Neutral Density (ND) filter 6 and an optical shutter 7 through a first dichroic mirror 5, and then is focused and irradiated on a selected area on the surface of a sample 18 through a second dichroic mirror 8, a third dichroic mirror 11, an optical lens 12 and a quartz window 14, so that the in-situ repair is carried out on the crystal lattice damage of the sample. And after the ultra-short pulse laser radiation treatment is finished, entering a spectrum acquisition mode, detecting the crystal structure of the selected area again, and if the crystal lattice damage is repaired, entering an image acquisition mode, and observing other undetected areas on the surface of the thin film material. If the selected area still has lattice damage, adjusting the technological parameters of the ultrashort pulse laser for repairing the crystal structure according to the change of the characteristic peak position and the half-height width in the collected scattering spectrum, and continuously repairing the lattice damage in the selected area. Wherein λpwPw in (1) represents a pulse wave, λpwtPwt in (1) represents the pulse wave modulated by the optical parametric amplifier.
Preferably, the ultrashort pulse laser lambda can be properly adjusted according to the repairing effect on the crystal lattice damage of the selected area on the surface of the semiconductor thin film materialpwPulse width (femtosecond, picosecond, nanosecond), filtering intensity (100% -0.01%) of Neutral Density (ND) filter, and opening and closing time of optical shutter (more than or equal to 1 ns).
Further, when the ultrashort pulse laser is adopted to repair the detection area on the surface of the semiconductor thin film material, the vacuum system can provide a vacuum environment for the sample: the mechanical pump 25 is started, the butterfly control valve 23 is opened, the gas pressure sensor 22 displays the reduction of the gas pressure in the vacuum cavity 13, and when the gas pressure in the vacuum cavity 13 is close to 1Pa, the molecular pump26, the pipeline valve control 24 of the molecular pump is opened, and the gas pressure in the vacuum cavity 13 can be reduced to 10-4Pa。
Further, when the detection area of the surface of the semiconductor film material is repaired by adopting the ultrashort pulse laser, the gas circuit system can adjust the atmosphere of the environment where the sample is located: the molecular pump pipeline valve control 24 is closed, the molecular pump 26 is closed, the single-channel gas valve control 20 is opened, the gas channel main valve 21 is opened, the gas flow in the gas channel is regulated through the gas flowmeter 33, the mechanical pump 25 is normally opened, and the gas pressure in the vacuum cavity is controlled through regulating the opening and closing of the butterfly control valve 23.
Further, the gas pressure in the vacuum chamber can be preset, and the butterfly control valve 23 can be automatically adjusted according to the gas pressure value fed back by the pressure sensor 22, so that the gas pressure in the vacuum chamber can be always maintained at the preset value.
Preferably, when the ultrashort pulse laser is used for repairing the detection areas on the surfaces of different semiconductor thin film materials, the gas introduced by the gas path system can be inert gas, reducing gas and oxidizing gas according to the repairing effect of the crystal lattice damage.
Further, when the detection area on the surface of the semiconductor thin film material is repaired by adopting the ultrashort pulse laser, the cold-hot table 16 can be arranged on the XYZ three-axis translation table 15, and a temperature environment of-196 ℃ to 1200 ℃ can be provided for a sample by heating through the resistance wire and cooling through liquid nitrogen.
Further, when the ultrashort pulse laser is used for repairing the detection area of the surface of the semiconductor thin film material, the diamond pressure cavity 17 can be arranged on the cold and hot table 16, and a pressure environment of 0.0001-5.5 GPa can be provided for the local area of the surface of the sample.
The device is used for detecting and in-situ repairing the crystal structure of the high-energy phosphorus ion implanted diamond film, and mainly comprises the following steps:
the method comprises the following steps: the high-energy phosphorus ion implanted diamond film with the size of 10mm multiplied by 0.3mm is fixed on the cold and hot table 16, and the surface of the high-energy phosphorus ion implanted diamond film is observed by adopting an image acquisition mode. The surface of the diamond film is optically focused and the detection area is selected by adjusting the XYZ three-axis translation stage 15. As shown in fig. 3, the overall transparency of the diamond surface was severely reduced after high energy phosphorus ion implantation, showing a dark gray appearance, with visible distinct black particles in the implanted layer.
Step two: entering a spectrum collection mode, and adopting continuous laser wavelength lambdacw=633nm, output power 200mW, filtering intensity of a Neutral Density (ND) filter selected to be 50% and optical shutter 2s, scanning a selected area of the surface of the high-energy phosphorus ion implanted diamond film by moving an XYZ three-axis translation stage 15, and determining a characteristic peak of raman scattering spectrum (about 1332.5 cm) corresponding to the diamond structure on the surface-1) The distribution state of (c). As shown in figure 4 (A), after the high-energy phosphorus ion implantation, the diamond surface implantation layer corresponds to the characteristic peak (about 1332.5 cm) of the Raman scattering spectrum of the diamond structure-1) It is completely invisible, indicating that the diamond structure has been completely destroyed by the implanted high-energy phosphorous ions. Selecting diamond with invisible characteristic peak or half-height width of more than or equal to 10 cm-1And the location thereof is marked.
Step three: vacuum pumping is carried out by combining a mechanical pump 25 and a molecular pump 26 until the vacuum degree of the vacuum cavity reaches 10-4And introducing hydrogen into the vacuum cavity after Pa, wherein the gas flow is 100 sccm. The gas pressure in the vacuum chamber was controlled to 10000Pa by the gas pressure sensor 22 and the butterfly control valve 23, and then the cold and hot stage temperature was set to 600 ℃. Using ultrashort pulsed laser wavelength lambdapw=1030nm, pulse width 200fs, output power 5W, and ultrashort pulse laser wavelength λ after passing through the optical parametric amplifier 3pwt=515 nm. The Neutral Density (ND) filter was selected to have a filter intensity of 40%, an optical shutter of 50 μ s, and a wavelength of λpwtAnd (3) radiating the selected area of the surface of the diamond film implanted with the high-energy phosphorus ions by using the ultrashort pulse laser with the wavelength of 515nm to repair the crystal structure of the diamond film in situ. As shown in fig. 3, after the ultra-short pulse laser repair, the high-energy phosphorus ions are injected on the surface of the diamond sample and are transformed to be colorless, the transparency of the diamond sample is obviously improved, and the black particles in the injection layer basically disappear. As shown in FIG. 4 (B), after the ultrashort pulse laser repair, Raman of the diamond surface injection layerThe re-appearance of the scattered spectrum is at 1332.5 cm-1The sharp Raman scattering peak near the diamond structure, which corresponds to the diamond structure, shows that the diamond structure which is completely destroyed by the high-energy phosphorus ion injection originally is well repaired in situ after the ultrashort pulse laser radiation treatment.
It should be noted that the present invention, which is not described in detail, adopts the prior art. All electrical connections referred to in the present invention are prior art.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. A device with crystal structure detection and in-situ restoration functions is characterized by comprising: the device comprises a laser source, a laser light path system, an illumination light source, an illumination light path system, an image and spectrum acquisition system, a vacuum system, a gas path system, an XYZ three-axis translation table, a cold-hot table and a diamond pressure cavity; the laser light path system guides and focuses laser from the laser source to the surface of the semiconductor thin film material; the illumination light source and the illumination optical path system can emit illumination light in a visible light region and guide and focus the illumination light to the surface of the semiconductor thin film material; the image and spectrum acquisition system can acquire the surface characteristics of the sample after visible light illumination and the scattering spectrum information after continuous laser excitation, so that the surface of the sample is observed, positioned and the crystal structure is detected; the vacuum system comprises a vacuum cavity, the vacuum system and the gas circuit system can control the vacuum degree and the gas atmosphere of the environment where the semiconductor film material is located, the cold and hot table and the diamond pressure cavity can adjust the temperature and the pressure of the environment where the cold and hot table and the diamond pressure cavity are located, and finally different areas on the surface of the semiconductor film can be detected and repaired through the movement of the XYZ three-axis translation table; the laser source comprises an optical parametric amplifier, the laser source can emit continuous laser and ultrashort pulse laser, wherein the continuous laser source is monochromatic laser and is ultraviolet, visible or near infrared light, the ultrashort pulse laser source outputs near infrared light with the laser wavelength being more than 700nm, the wavelength of the laser output by the ultrashort pulse laser source can be continuously adjusted through the optical parametric amplifier, and the ultrashort pulse laser wavelength input into a laser path system is in the range of 210-2600 nm.
2. The apparatus of claim 1, wherein the output power of the continuous laser in the laser source is 0-1W, the output power of the ultra-short pulse laser is 10mW-40W, the pulse width of the ultra-short pulse laser is nanosecond, picosecond or femtosecond, and the output powers of the continuous laser and the ultra-short pulse laser are adjusted by a Neutral Density (ND) filter of 100% -0.01%.
3. The device with crystal structure detection and in-situ restoration functions as claimed in claim 1, wherein the image and spectrum acquisition system comprises a CMOS camera, a movable reflector, a high-pass filter, a diffraction grating, an isosceles prism and a spectrum CCD, and has two working modes of image acquisition and spectrum acquisition; firstly, observing and positioning the surface of a semiconductor thin film material in an image acquisition mode; when the image acquisition mode is used, the illumination light source emits white light, the white light is focused on the surface of a sample through the illumination light path system, and the reflected and scattered light signals enter the image and spectrum acquisition system and are finally received by the CMOS camera; then scanning the crystal structure on the surface of the semiconductor thin film material by using a spectrum acquisition mode; when the spectrum acquisition mode is used, continuous laser emitted by the laser source is focused on the surface of a sample through the laser optical path system and excites the scattering spectrum of a material, and a spectrum signal enters the spectrum CCD after being split by the high-pass filter and the diffraction grating, so that the detection of the crystal structure in an observation area is realized.
4. The device with crystal structure detection and in-situ repair functions as claimed in claim 3, wherein the image collection mode is used for observing and positioning the surface of the semiconductor thin film material, the spectrum collection mode is used for detecting the crystal structure of the corresponding area on the surface of the material, and for the area with poor crystal quality on the surface of the material, the laser light source can be switched to perform in-situ repair on the corresponding area by using the ultrashort pulse laser; the laser light path system and the illumination light path system are always in a coaxial confocal state.
5. The device as claimed in claim 1, wherein the vacuum degree of the vacuum system is 10-4Pa, filling inert gas, reducing gas and oxidizing gas into the vacuum cavity through the gas path system to change the atmosphere of the environment where the semiconductor film material is located, wherein the pressure of the gas filled into the vacuum cavity is 10 at most5Pa。
6. The apparatus as claimed in claim 1, wherein the optical focusing and observation/repair area of the surface of the semiconductor thin film material can be adjusted by moving the XYZ stage, the inspection and repair size of the semiconductor thin film material is 0.1-100mm, and the thickness is 0.000001-10 mm.
7. The device with crystal structure detection and in-situ restoration functions as claimed in claim 1, wherein the cold and hot stage is detachably connected to the XYZ three-axis translation stage as an accessory, and is cooled by resistance wire heating and liquid nitrogen at a temperature ranging from-196 ℃ to 1200 ℃.
8. The device with crystal structure detection and in-situ repair functions as claimed in claim 1, wherein the diamond pressure chamber is installed on the cold and hot table as an accessory, can be disassembled, and can provide a pressure environment of 0.0001-5.5 GPa.
9. The device as claimed in claim 1, wherein the optical components of the device can be connected by a sleeve around the optical path or coupled by an optical fiber for transmission, or can be exposed in a gas environment or vacuum without connection.
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|---|---|---|---|---|
| CN1708834A (en) * | 2003-10-29 | 2005-12-14 | 住友电气工业株式会社 | Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
| JP2008033306A (en) * | 2006-07-03 | 2008-02-14 | Olympus Corp | Defect correcting device |
| CN107462592A (en) * | 2017-07-20 | 2017-12-12 | 武汉大学 | Bimodulus successively measuring system |
| CN107655909A (en) * | 2017-07-20 | 2018-02-02 | 武汉大学 | The electron diffraction instrument of defect auto-control can be achieved |
| CN110281142A (en) * | 2019-06-20 | 2019-09-27 | 山东大学 | Diamond seed preparation method, diamond seed and monocrystalline |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1473354A (en) * | 2001-09-10 | 2004-02-04 | ������������ʽ���� | Apparatus for repairing defect of substrate |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1708834A (en) * | 2003-10-29 | 2005-12-14 | 住友电气工业株式会社 | Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
| JP2008033306A (en) * | 2006-07-03 | 2008-02-14 | Olympus Corp | Defect correcting device |
| CN107462592A (en) * | 2017-07-20 | 2017-12-12 | 武汉大学 | Bimodulus successively measuring system |
| CN107655909A (en) * | 2017-07-20 | 2018-02-02 | 武汉大学 | The electron diffraction instrument of defect auto-control can be achieved |
| CN110281142A (en) * | 2019-06-20 | 2019-09-27 | 山东大学 | Diamond seed preparation method, diamond seed and monocrystalline |
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