CN112014624A - Hysteresis voltage detection circuit - Google Patents

Hysteresis voltage detection circuit Download PDF

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Publication number
CN112014624A
CN112014624A CN202010905664.8A CN202010905664A CN112014624A CN 112014624 A CN112014624 A CN 112014624A CN 202010905664 A CN202010905664 A CN 202010905664A CN 112014624 A CN112014624 A CN 112014624A
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voltage
power switch
dividing resistor
hysteresis
coupled
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姚宇桐
洪宗良
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Shenzhen Shengnengjie Technology Co ltd
Yarongyuan Technology Shenzhen Co ltd
APD SHENZHEN DK Inc
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Shenzhen Shengnengjie Technology Co ltd
Yarongyuan Technology Shenzhen Co ltd
APD SHENZHEN DK Inc
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0084Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/02Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration

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Abstract

A hysteresis voltage detection circuit belongs to the field of voltage detection circuits. The voltage stabilizing circuit comprises a voltage stabilizing unit, a first power switch, a first voltage dividing resistor, a second voltage dividing resistor, a third voltage dividing resistor and a second power switch. The voltage stabilizing unit is coupled with an adjustable voltage source. When the first power switch and the second power switch are both turned on, the first voltage dividing resistor, the second voltage dividing resistor and the third voltage dividing resistor divide the voltage of the adjustable voltage source. When the first power switch and the second power switch are both turned off, the first voltage dividing resistor and the second voltage dividing resistor divide the voltage of the adjustable voltage source. The hysteresis voltage detection circuit of the invention solves the technical problem that the circuit in the prior art is easy to generate serious voltage level shift phenomenon due to the change of process tolerance or environment temperature when used for detecting the transition point, and achieves the purposes of low cost, low power consumption and accurate control of the voltage hysteresis phenomenon.

Description

Hysteresis voltage detection circuit
Technical Field
The present invention relates to a voltage detection circuit, and more particularly to a hysteresis voltage detection circuit for detecting voltage variation to control voltage hysteresis.
Background
In conventional circuit implementations, the positive feedback function of the comparator is generally used to achieve the voltage hysteresis. Furthermore, the conventional voltage hysteresis phenomenon can be realized by adjusting the reference voltage through the power switch and generating the hysteresis voltage function by matching with the comparator. Conventional Bipolar Junction Transistors (BJTs) used with comparators are prone to severe voltage level drift caused by process tolerance or environmental temperature variation, and when the circuits are used for transition point detection (e.g., temperature protection, noise interference/malfunction prevention, etc.), the accuracy of the corresponding operating point with voltage hysteresis is not high, which results in the problem that the voltage hysteresis cannot be accurately controlled. Further, the conventional approach uses a comparator device with high cost, high power consumption, and high circuit complexity.
Therefore, how to design a hysteresis voltage detection circuit, especially to solve the aforementioned technical problems in the prior art, is an important issue studied by the present inventors.
Disclosure of Invention
The present invention provides a hysteresis voltage detection circuit, which solves the technical problem that the circuit in the prior art is easily subjected to the process tolerance or the environmental temperature variation to generate the serious voltage level shift phenomenon when used for detecting the transition point, and achieves the purposes of low cost, low power consumption and accurate control of the voltage hysteresis phenomenon.
In order to achieve the above objectives, the hysteresis voltage detecting circuit provided by the present invention includes a voltage stabilizing unit, a first power switch circuit and a second power switch circuit. The voltage stabilizing unit comprises an anode, a cathode and a reference end, wherein the anode is grounded, and the cathode is coupled with an adjustable voltage source. The first power switch circuit comprises a first power switch, and the first power switch is coupled with the cathode of the voltage stabilizing unit and the adjustable voltage source. The second power switch circuit comprises a first voltage-dividing resistor, a second voltage-dividing resistor, a third voltage-dividing resistor and a second power switch, the second power switch is a field effect transistor, the reference end of the voltage stabilizing unit is coupled with the adjustable voltage source through the first voltage-dividing resistor, the second voltage-dividing resistor and the third voltage-dividing resistor are coupled with the second power switch, the second voltage-dividing resistor is grounded, the second power switch is coupled with the first power switch, and the second power switch is coupled with the first voltage-dividing resistor and the reference end of the voltage stabilizing unit through the second voltage-dividing resistor and the third voltage-dividing resistor. When the first power switch and the second power switch are both turned on, the first voltage dividing resistor, the second voltage dividing resistor and the third voltage dividing resistor divide the voltage of the adjustable voltage source and generate a first voltage to the reference terminal of the voltage stabilizing unit, so that the voltage stabilizing unit is turned on. When the first power switch and the second power switch are both turned off, the first voltage dividing resistor and the second voltage dividing resistor divide the voltage of the adjustable voltage source and generate a second voltage to the reference end of the voltage stabilizing unit, so that the voltage stabilizing unit is turned off.
Furthermore, in the hysteresis voltage detection circuit, the cathode of the voltage stabilization unit is coupled to the adjustable voltage source through the first current limiting resistor.
In the hysteresis voltage detection circuit, the first power switch circuit further includes a diode and a second current-limiting resistor, wherein the second current-limiting resistor is coupled to the diode, and the first power switch is coupled to the first current-limiting resistor and the voltage-stabilizing unit via the second current-limiting resistor and the diode.
Furthermore, in the hysteresis voltage detection circuit, the first power switch is grounded through the third current limiting resistor.
Furthermore, in the hysteresis voltage detection circuit, the third current limiting resistor is grounded through the zener diode.
Furthermore, in the hysteresis voltage detection circuit, the first voltage is smaller than the second voltage.
Furthermore, in the hysteresis voltage detection circuit, the adjustable voltage source includes a commercial power or a sine wave generator.
Furthermore, in the hysteresis voltage detection circuit, the adjustable voltage source includes a thermistor.
Has the advantages that:
when the hysteresis voltage detection circuit is used, the voltage level of the adjustable voltage source is variable, and the hysteresis entry point and the hysteresis exit point of the hysteresis phenomenon can be controlled according to the matched first voltage-dividing resistor, the matched second voltage-dividing resistor and the matched third voltage-dividing resistor with specific parameters. When the voltage level of the adjustable voltage source is adjusted to make the first power switch and the second power switch both conduct, the first voltage dividing resistor, the second voltage dividing resistor and the third voltage dividing resistor divide the voltage of the adjustable voltage source and generate the first voltage to the reference end of the voltage stabilizing unit to make the voltage stabilizing unit conduct, and at this time, the hysteresis voltage detecting circuit is located at the hysteresis entry point. When the voltage level of the adjustable voltage source is adjusted to turn off both the first power switch and the second power switch, the first voltage dividing resistor and the second voltage dividing resistor divide the voltage of the adjustable voltage source and generate a second voltage to the reference terminal of the voltage stabilizing unit to turn off the voltage stabilizing unit, and at this time, the hysteresis voltage detecting circuit is located at a hysteresis break-away point. Furthermore, since the second power switch of the voltage dividing resistor (including the second voltage dividing resistor and the third voltage dividing resistor) below the hysteresis voltage detection circuit is a field effect transistor, the field effect transistor has better temperature stability compared with a bipolar junction transistor used in a conventional voltage hysteresis circuit, and the on-resistance of the field effect transistor is less prone to drift due to temperature changes, thereby reducing the temperature influence on the voltage compared with the voltage dividing resistor. In addition, compared with the traditional mode, the invention also avoids the defects of high cost, high power consumption and complex circuit caused by using a comparator.
Therefore, the hysteresis voltage detection circuit of the invention solves the technical problem that the circuit in the prior art is easy to generate serious voltage level shift phenomenon due to the change of the process tolerance or the environmental temperature when used for detecting the transition point, and achieves the purposes of low cost, low power consumption and accurate control of the voltage hysteresis phenomenon.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a circuit diagram of a hysteresis voltage detection circuit according to the present invention;
FIG. 2 is a waveform diagram of the hysteresis voltage measurement point Vo1 of the hysteresis voltage detection circuit according to the present invention;
fig. 3 is a waveform diagram illustrating the voltage V1 measured at the hysteresis voltage measurement point Vin of the hysteresis voltage detection circuit of the present invention, and the first power switch Q1 is turned on.
The power supply comprises a first power switch circuit 10, a second power switch circuit 20, a U1 voltage stabilizing unit, a first R11 current limiting resistor, a second R12 current limiting resistor, a third R13 current limiting resistor, a first R1 voltage dividing resistor, a second R2 voltage dividing resistor, a third R3 voltage dividing resistor, a first Q1 power switch, a second Q2 power switch, a D1 diode, a D3 Zener diode, a Vin voltage measuring point, a Vo1 voltage measuring point, a Vref reference end, a V adjustable voltage source, a V1 voltage, a V2 voltage, a VD3 voltage and a T time axis.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Detailed description of the preferred embodiment
The technical contents and the detailed description of the present invention are described below with reference to the drawings.
Referring to fig. 1 to 3, the hysteresis voltage detecting circuit includes a voltage stabilizing unit U1, a first power switch circuit 10, and a second power switch circuit 20. The voltage regulation unit U1 includes an anode, a cathode, and a reference terminal Vref, the anode of the voltage regulation unit U1 is grounded, and the cathode of the voltage regulation unit U1 is coupled to the adjustable voltage source V through a first current limiting resistor R11.
Further, the voltage stabilizing unit U1 may be a TL431 adjustable shunt regulator of Texas Instruments (TI), but the present invention is not limited thereto, and a voltage measuring point Vin is disposed between the first current limiting resistor R11 and the adjustable voltage source V.
Furthermore, the adjustable voltage source V may be a commercial power or a sine wave generator with a variable voltage level, or a detection circuit coupled to an electronic element with a Negative Temperature Coefficient (NTC) such as a thermistor.
The first power switch circuit 10 includes a first power switch Q1, a diode D1, and a second current limiting resistor R12. In the embodiment of the invention, two ends of the second current-limiting resistor R12 are respectively coupled to the diode D1 and the first power switch Q1, and the diode D1 is coupled to the first current-limiting resistor R11 and the voltage-stabilizing unit U1. However, the present invention is not limited thereto, that is, the diode D1 and the second current-limiting resistor R12 may be coupled in series, that is, in different embodiments, two ends of the diode D1 are respectively coupled to the second current-limiting resistor R12 and the first power switch Q1, and the second current-limiting resistor R12 is coupled to the first current-limiting resistor R11 and the voltage regulator unit U1. The first power switch Q1 may be an NPN-type Bipolar Junction Transistor (BJT), and a collector (collector) of the first power switch Q1 is coupled to the adjustable voltage source V and the first current limiting resistor R11. The base (base) of the first power switch Q1 is coupled to the first current-limiting resistor R11 and the voltage-stabilizing unit U1 through the second current-limiting resistor R12 and the diode D1 in sequence. An emitter (emitter) of the first power switch Q1 is coupled to the third current limiting resistor R13, and is connected to the ground through the third current limiting resistor R13 and a Zener diode (Zener diode) D3 in sequence. And a voltage measurement point Vo1 is arranged between the third current limiting resistor R13 and the Zener diode D3. In another embodiment of the present invention, which is not shown, the zener diode D3 may not be needed, i.e., the emitter of the first power switch Q1 is grounded only through the third current limiting resistor R13. However, the present invention is not so limited.
The second power switch circuit 20 includes a first voltage-dividing resistor R1, a second voltage-dividing resistor R2, a third voltage-dividing resistor R3, and a second power switch Q2. The second power switch Q2 may be a metal-oxide-semiconductor field effect transistor (MOSFET), but the invention is not limited thereto. The reference terminal Vref of the voltage regulation unit U1 is coupled to the adjustable voltage source V through a first voltage dividing resistor R1. One end of the second voltage-dividing resistor R2 is coupled to the source (source) of the second power switch Q2, and the other end is grounded. One end of the third voltage dividing resistor R3 is coupled to the second voltage dividing resistor R2, and the other end is coupled to the drain (drain) of the second power switch Q2. A gate (gate) of the second power switch Q2 is coupled to an emitter (emitter) of the first power switch Q1, and the second power switch Q2 is coupled to the first voltage dividing resistor R1 and a reference terminal Vref of the voltage regulator unit U1 through a second voltage dividing resistor R2 and a third voltage dividing resistor R3.
When the hysteresis voltage detection circuit of the present invention is used, since the voltage level of the adjustable voltage source V is variable (adjustable), the hysteresis entry point and the hysteresis exit point of the hysteresis can be controlled according to the first voltage dividing resistor R1, the second voltage dividing resistor R2, and the third voltage dividing resistor R3 with specific parameters. When the voltage level of the regulated voltage source V is adjusted to turn ON (ON) the first power switch Q1 and the second power switch Q2, the first voltage dividing resistor R1, the second voltage dividing resistor R2 and the third voltage dividing resistor R3 divide the voltage of the regulated voltage source V, at this time, the second voltage dividing resistor R2 and the third voltage dividing resistor R3 are connected in parallel and then connected in series with the first voltage dividing resistor R1, and generate the first voltage Vref-1 to the reference terminal Vref of the regulator unit U1, so that the regulator unit U1 is turned ON (ON) (assuming that the ON-threshold voltage of TL431 is 2.5V), and at this time, the hysteresis voltage detection circuit is located at the entry point hysteresis.
Further, when entering the hysteresis entry point, the voltage measured at the voltage measurement point Vin is V1 (in the embodiment of the present invention, the voltage V1 may be 14V), and the voltage waveform of the voltage measurement point Vo1 also varies with the time axis T (in milliseconds, μ s), as shown in fig. 2. Since the voltage measured at the voltage measurement point Vin is V1 and the first power switch Q1 is turned on, the voltage measured at the voltage measurement point Vo1 is the voltage VD3 of the zener diode D3, as shown in fig. 3.
Further, the value of the voltage V1 can be calculated by the following equation:
Figure BDA0002661332510000071
and the value of the first voltage Vref-1 can be calculated by the following equation:
Figure BDA0002661332510000072
when the voltage level of the variable voltage source V is adjusted to turn OFF (OFF) both the first power switch Q1 and the second power switch Q2, the first voltage dividing resistor R1 and the second voltage dividing resistor R2 divide the voltage of the variable voltage source V, and at this time, the first voltage dividing resistor R1 and the second voltage dividing resistor R2 are connected in series, and generate the second voltage Vref-2 to the reference terminal Vref of the regulator unit U1, so that the regulator unit U1 is turned OFF (OFF), and at this time, the hysteresis voltage detection circuit is located at the hysteresis break point. In the described embodiment of the present invention, the first voltage Vref-1 is less than the second voltage Vref-2. Further, when the hysteresis break-off point is entered, the voltage measured at the voltage measurement point Vin is V2 (in the embodiment of the present invention, the voltage V2 may be 10V), and the voltage waveform of the voltage measurement point Vo1 also varies with the time axis T (in milliseconds, μ s), as shown in fig. 2. Furthermore, since the second power switch Q2 of the voltage dividing resistor (including the second voltage dividing resistor R2 and the third voltage dividing resistor R3) under the hysteresis voltage detecting circuit is a Field Effect Transistor (FET), the FET has better temperature stability than a Bipolar Junction Transistor (BJT) used in the conventional voltage hysteresis circuit, and the on-resistance of the FET is less susceptible to temperature variation and drift, so that the influence of temperature on the voltage can be reduced compared to the first voltage dividing resistor R1, the second voltage dividing resistor R2 and the third voltage dividing resistor R3. In addition, compared with the traditional mode, the invention also avoids the defects of high cost, high power consumption and complex circuit caused by using a comparator.
Further, the value of the voltage V2 can be calculated by the following equation:
Figure BDA0002661332510000081
and the value of the second voltage Vref-2 can be calculated by the following equation:
Figure BDA0002661332510000082
therefore, the hysteresis voltage detection circuit of the invention solves the technical problem that the circuit in the prior art is easy to generate serious voltage level shift phenomenon due to the change of the process tolerance or the environmental temperature when used for detecting the transition point, and achieves the purposes of low cost, low power consumption and accurate control of the voltage hysteresis phenomenon.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (8)

1. A hysteresis voltage detection circuit, comprising:
the voltage stabilizing unit comprises an anode, a cathode and a reference end, wherein the anode is grounded, and the cathode is coupled with an adjustable voltage source;
a first power switch circuit including a first power switch coupled to the cathode of the voltage regulation unit and the adjustable voltage source; and
the second power switch circuit comprises a first voltage-dividing resistor, a second voltage-dividing resistor, a third voltage-dividing resistor and a second power switch; the second power switch is a field effect transistor, and the reference end of the voltage stabilizing unit is coupled with the adjustable voltage source through the first voltage dividing resistor; the second voltage-dividing resistor and the third voltage-dividing resistor are coupled to the second power switch, the second voltage-dividing resistor is grounded, the second power switch is coupled to the first power switch, and the second power switch is coupled to the first voltage-dividing resistor and the reference terminal of the voltage-stabilizing unit through the second voltage-dividing resistor and the third voltage-dividing resistor;
when the first power switch and the second power switch are both turned on, the first voltage dividing resistor, the second voltage dividing resistor and the third voltage dividing resistor divide the voltage of the adjustable voltage source and generate a first voltage to the reference end of the voltage stabilizing unit to turn on the voltage stabilizing unit;
when the first power switch and the second power switch are both turned off, the first voltage dividing resistor and the second voltage dividing resistor divide the voltage of the adjustable voltage source and generate a second voltage to the reference terminal of the voltage stabilizing unit, so that the voltage stabilizing unit is turned off.
2. The hysteresis voltage detecting circuit of claim 1, wherein the cathode of the voltage regulator unit is coupled to the adjustable voltage source through a first current limiting resistor.
3. The hysteresis voltage detection circuit as claimed in claim 2, wherein the first power switch circuit further comprises: a diode;
and a second current limiting resistor coupled to the diode;
the first power switch is coupled to the first current-limiting resistor and the voltage-stabilizing unit through the second current-limiting resistor and the diode.
4. The hysteresis voltage detecting circuit of claim 1, wherein the first power switch is grounded through a third current limiting resistor.
5. The hysteretic voltage detection circuit of claim 4, wherein said third current limiting resistor is connected to ground through a Zener diode.
6. The hysteresis voltage detecting circuit of claim 1, wherein the first voltage is less than the second voltage.
7. The hysteresis voltage detection circuit of claim 1, wherein the adjustable voltage source comprises a commercial power or a sine wave generator.
8. The hysteresis voltage detecting circuit of claim 1, wherein the adjustable voltage source comprises a thermistor.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086674A (en) * 1994-06-16 1996-01-12 Sharp Corp Power source detecting circuit
CN201846066U (en) * 2010-11-19 2011-05-25 东莞市奥源电子科技有限公司 Undervoltage protective circuit with delaying function
CN102097934A (en) * 2011-02-25 2011-06-15 浙江大学 Hysteresis mode buck DC/DC (direct current/direct current) switch converter
US20120161743A1 (en) * 2010-12-24 2012-06-28 Hon Hai Precision Industry Co., Ltd. Regulation device and power adapter using the same
EP3484035A1 (en) * 2016-07-08 2019-05-15 Seari Electric Technology Co., Ltd. Hysteresis power supply circuit
CN110718897A (en) * 2018-07-12 2020-01-21 士林电机厂股份有限公司 Voltage control device with automatic detection function

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086674A (en) * 1994-06-16 1996-01-12 Sharp Corp Power source detecting circuit
CN201846066U (en) * 2010-11-19 2011-05-25 东莞市奥源电子科技有限公司 Undervoltage protective circuit with delaying function
US20120161743A1 (en) * 2010-12-24 2012-06-28 Hon Hai Precision Industry Co., Ltd. Regulation device and power adapter using the same
CN102097934A (en) * 2011-02-25 2011-06-15 浙江大学 Hysteresis mode buck DC/DC (direct current/direct current) switch converter
EP3484035A1 (en) * 2016-07-08 2019-05-15 Seari Electric Technology Co., Ltd. Hysteresis power supply circuit
CN110718897A (en) * 2018-07-12 2020-01-21 士林电机厂股份有限公司 Voltage control device with automatic detection function

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