CN112007703A - Method for manufacturing droplet driving device - Google Patents
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- CN112007703A CN112007703A CN202010470648.0A CN202010470648A CN112007703A CN 112007703 A CN112007703 A CN 112007703A CN 202010470648 A CN202010470648 A CN 202010470648A CN 112007703 A CN112007703 A CN 112007703A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/50273—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means or forces applied to move the fluids
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2400/00—Moving or stopping fluids
- B01L2400/04—Moving fluids with specific forces or mechanical means
- B01L2400/0403—Moving fluids with specific forces or mechanical means specific forces
- B01L2400/0415—Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic
- B01L2400/0427—Electrowetting
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Abstract
The application discloses a method for manufacturing a droplet driving device, which comprises the following steps: preparing an interconnection metal layer on a substrate, wherein the interconnection metal layer comprises row-direction metal strips and column-direction metal strips which are arranged at intervals; preparing an insulating layer on the interconnection metal layer; forming contact holes on the row-direction metal strips and the column-direction metal strips; and preparing a conductive metal layer on the insulating layer, wherein the conductive metal layer comprises array electrodes, each row-direction metal strip is connected with the corresponding electrode in the row through a contact hole, each column-direction metal strip is connected with the corresponding electrode in the column through a contact hole, so that the electrodes connected with the row-direction metal strips in the same row are all electrically connected with the same row-direction lead, and the electrodes connected with the column-direction metal strips in the same column are all electrically connected with the same column-direction lead. By arranging the arrayed electrodes and multiplexing the plurality of electrodes, the number of the leads of the arrayed driving electrodes, the system complexity and the process manufacturing difficulty can be greatly reduced, and further the cost and the control complexity are reduced.
Description
Technical Field
The invention belongs to the technical field of microfluid driving, and relates to a preparation method of a liquid drop driving device.
Background
The ultimate goal of Lab-on-a-Chip (LOC) research is to connect and coexist a plurality of units or modules with different functions on a microscale and to cooperatively complete a series of complex biochemical analysis works such as sample preparation, biological and chemical reactions, separation and detection, and the like. Finally, all functional modules related in the fields of biology, chemistry and the like can be integrated on a chip with the square centimeter, and the functional modules can be directly applied to biochemical detection, environmental rapid detection and the like. However, in the existing lab-on-a-chip which has been developed and applied gradually, the key function of the core of the lab-on-a-chip is that microfluid driving is mainly performed in a pressure driving mode, a thermal driving mode and the like, power needs to be supplied from the outside, the amount of fluid to be driven is relatively large, a plurality of flow channel driving components and high power consumption are provided, and the driving mode does not have universality among different devices, so that the effective function of the microfluidic basic operation unit, namely liquid drops, cannot be exerted. Therefore, an effective and easy-to-operate micro-fluid platform-level liquid drop control method is formed, and the method plays a vital role in the development of a subsequent lab-on-a-chip.
Based On the Electrowetting-On-Dielectric (EWOD) effect On a medium, an insulating layer film is added between a metal electrode and an electrolyte, and when a certain voltage is applied between a liquid and the electrode, the liquid-solid surface tension can be reversibly changed, which is shown as the change of the contact angle θ of a liquid drop On the solid surface, as shown in fig. 1 (a). When the contact angle theta of the liquid drop is symmetrically and uniformly changed, the liquid drop macroscopically shows a process of spreading from a spherical liquid drop into a liquid film, as shown in fig. 1 (b). If the contact angle θ changes asymmetrically, a gradient occurs in the surface tension at the contact line on both sides of the droplet, so that the droplet migrates and moves, as shown in fig. 1(c), which is also the theoretical basis for droplet manipulation in lab-on-a-chip.
As can be seen from the principle, the manipulation of the micro-droplets on the chip can be realized by using the electrowetting effect and the voltage operation of the electrodes, and the specific manipulations include migration (as shown in fig. 2 (1)), division (as shown in fig. 2 (2)), mixing (as shown in fig. 2 (3)), and oscillation (as shown in fig. 2 (4)), and the blocks in fig. 2 are driving electrodes. By combining these functions, various biological and chemical test procedures can be migrated to the chip to realize lab-on-a-chip system, and the path planning and migration of the liquid drop driven by the electrodes are shown in fig. 3. Biological and chemical test processes are relatively complex processes, and each process needs a plurality of electrodes to be realized, so one of key technologies for realizing the lab-on-a-chip is to form a large number of driving electrodes and give driving signals according to requirements for driving liquid drops to operate according to the requirements.
There are two main driving methods for large-scale electrode arrays driven by liquid drops:
first, as shown in fig. 4, each electrode in the electrode array is independently driven and controlled, i.e. each electrode is connected with a lead wire and a voltage source independently, which has the advantages of very simple array design, low complexity of control algorithm design and optimal driving effect. However, the most prominent problems with this solution are: the number of leads increases exponentially with array size, for example, for an electrode array with m rows and n columns, the number of leads required is m × n, and when m ═ n ═ 20, the number of leads is 400, which is not practical for most driving systems, and is a challenge for the design of driving interfaces.
Secondly, as shown in fig. 5, the electrode array uses an active matrix driving technique, and a Thin Film Transistor (TFT) device and an energy storage capacitor C are connected to each driving electrode, and each electrode is independently controlled by the switching action of the TFT device, so as to drive the liquid droplets. The advantage of this solution is that the number of driving leads is greatly reduced, for example, for an electrode array with m rows and n columns, the number of driving leads is m + n, when m is 20, the number of driving leads is 40, which is 10 times less than 400 of the first solution, and the advantage of this solution is more obvious when the scale is increased. However, this solution has three distinct disadvantages: the first disadvantage is that the design of the driving array is complex, the cost is high, because a thin film transistor and an energy storage capacitor are required to be arranged below each liquid drop driving array, the manufacturing process is very complex, and the requirements on the characteristics of the TFT device such as voltage resistance and the like are strict (because the liquid drop driving needs higher voltage which is more than 10V); a second drawback is the high droplet requirements, since this solution is a brush-type drive, requiring matching of the storage capacitance to the droplet size and electrical parameters to be able to drive the droplets efficiently, and once the droplet characteristics change, the device characteristics need to change, which is complicated and costly.
Disclosure of Invention
The application provides a method for manufacturing a droplet driving device, comprising the following steps:
preparing an interconnection metal layer on a substrate, wherein the interconnection metal layer comprises m rows multiplied by n columns of row-direction metal strips and column-direction metal strips, the row-direction metal strips and the column-direction metal strips in each row of the interconnection metal layer are arranged at intervals, and the row-direction metal strips and the column-direction metal strips in each column of the interconnection metal layer are arranged at intervals; preparing an insulating layer on the interconnection metal layer; forming a contact hole uncovered by an insulating layer on each of the row-direction metal strips and the column-direction metal strips; preparing a conductive metal layer on the insulating layer, wherein the conductive metal layer comprises m rows x n columns of array electrodes, each row-direction metal strip is connected with the electrode at the corresponding position in the row through a contact hole, each column-direction metal strip is connected with the electrode at the corresponding position in the column through a contact hole, the electrodes connected with the row-direction metal strips in the same row are all electrically connected with the same row-direction lead, and the electrodes connected with the column-direction metal strips in the same column are all electrically connected with the same column-direction lead.
Optionally, the preparing an interconnection metal layer on the substrate includes: depositing a first conducting layer on the substrate, and carrying out first-time patterning on the first conducting layer to form the interconnection metal layer, wherein the first-time patterning comprises a stripping process, photoetching and dry etching or photoetching and wet etching.
Optionally, the preparing an insulating layer on the interconnection metal layer includes: depositing the insulating layer on the interconnect metal layer using a chemical vapor deposition, including Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), or ion-coupled plasma chemical vapor deposition (ICP-CVD), a physical vapor deposition, including sputtering or evaporation, or a spin-on process.
Optionally, the forming a contact hole uncovered by an insulating layer on each of the row-direction metal strips and the column-direction metal strips includes: and patterning the insulating layer for the second time through photoetching to form contact holes which are not covered by the insulating layer on the row-direction metal strips and the column-direction metal strips, wherein the patterning for the second time comprises wet etching and dry etching of the contact holes or direct photoetching, and the contact holes are formed, wherein: forming a contact hole on a first row-wise metal strip positioned at the first side of the interconnection metal layer in each row to connect with an electrode positioned at the first side in the row; forming two spaced contact holes on the second-type row-direction metal strip at the rest positions in each row so as to connect two electrodes arranged at intervals in the row; forming a contact hole on the first column-direction metal strip positioned at the second side edge of the interconnection metal layer in each column so as to connect an electrode positioned at the second side edge in the column; forming two spaced contact holes on the second-type column-direction metal strips at the rest positions in each column to connect two electrodes arranged at intervals in the column;
the first side edge and the second side edge are adjacent.
Optionally, the preparing a conductive metal layer on the insulating layer includes: and depositing a second conducting layer on the insulating layer, and carrying out third patterning on the second conducting layer to form the conducting metal layer, wherein the third patterning comprises a stripping process, photoetching and dry etching or photoetching and wet etching.
Optionally, after the conductive metal layer is prepared on the insulating layer, the preparation method further includes: preparing a dielectric layer on the conductive metal layer by adopting a deposition mode; and depositing a super-hydrophobic material or a structural super-hydrophobic material on the surface of the dielectric layer to form a first super-hydrophobic layer.
Optionally, after the first super-hydrophobic layer is formed, the preparation method further includes: set up closed top apron on the first super hydrophobic layer, the top apron includes from the second super hydrophobic layer, top conducting layer and the top substrate of supreme down.
Optionally, the top substrate may be a silicon wafer, a glass sheet, or a polymer plastic material, the top conductive layer is a metal conductive material, and the first super-hydrophobic layer and the second super-hydrophobic layer are both made of teflon or cytop materials.
Optionally, the forming a contact hole uncovered by an insulating layer on each of the row-direction metal strips and the column-direction metal strips includes: forming a contact hole on the row-direction metal strip positioned on the first side edge of the interconnection metal layer and the vertical metal strip positioned on the second side edge of the interconnection metal layer so as to be connected with an electrode at the position of the contact hole, wherein the first side edge is adjacent to the second side edge; and forming a contact hole at two ends of the other row-direction metal strips and the other column-direction metal strips respectively, wherein the distance between the two contact holes on each metal strip is larger than the preset distance so as to be used for connecting two electrodes arranged at intervals.
According to the technical scheme, the application can at least realize the following beneficial effects:
by arranging the arrayed electrodes and multiplexing the plurality of electrodes with leads, the number of leads of the arrayed driving electrodes, the system complexity and the process manufacturing difficulty can be greatly reduced, and further, the cost is reduced and the control complexity is reduced.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic diagram of the electrowetting principle;
FIG. 2 is a schematic diagram of droplet operations under electrode drive;
FIG. 3 is a schematic diagram of the path planning and migration of a droplet driven by electrodes;
fig. 4 is a schematic view of a droplet driving device provided in a first prior art scheme;
fig. 5 is a schematic view of a droplet driving device provided in a second conventional embodiment;
FIG. 6 is a schematic view of the driving of the droplet movement;
FIG. 7 is a schematic diagram of an array electrode in a droplet driving device provided in an embodiment of the present application;
FIG. 8 is a schematic diagram of an interconnect metal layer in a drop driven device provided in one embodiment of the present application;
FIG. 9 is a schematic diagram of an arrangement of interconnect metal layers and array electrodes in a droplet driving device provided in one embodiment of the present application;
FIG. 10A is a method flow diagram of a method of making a droplet actuator device provided in one embodiment of the present application;
FIG. 10B is a method flow diagram of a method of making a droplet actuator device provided in another embodiment of the present application;
FIGS. 11A-11F are schematic cross-sectional views of various flow paths for droplet driving device fabrication in the present application;
fig. 12A and 12B are schematic views of two packaging modes of a droplet driving device provided in one embodiment of the present application.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
The liquid drop is driven by changing the contact angle between the liquid drop and the device by using an electric field formed between the electrodes, so that the liquid drop moves. When a suitable voltage V is applied to the B electrode relative to the a electrode, as shown in fig. 6, the droplet will move from the a electrode to the B electrode, in which process only the drive signals of the two electrodes a and B are needed, and no action is taken on the other electrodes.
Therefore, the driving of one liquid drop on the chip only needs to operate a few of the electrodes, and therefore, by utilizing the effect, the application provides the liquid drop driving device with the electrode multiplexing, and the driving of the liquid drop on the whole chip can be realized by connecting partial electrodes in parallel.
The droplet driving device provided by the application comprises an array electrode with m rows and n columns. The values of m and n may be the same or different. m is a natural number greater than 1, and n is a natural number greater than 1.
For any two adjacent rows of electrodes in the array electrodes, the first-class pre-positioning electrodes of the first row are connected to one row of leading wires at the end part of the first row, and the second-class pre-positioning electrodes of the second row in the two adjacent rows are connected to one row of leading wires at the end part of the second row, wherein the first-class pre-positioning is one of odd-number positions or even-number positions, and the second-class pre-positioning is the other of odd-number positions or even-number positions.
That is, the odd or even electrodes of each row are connected to the same row lead, so that the multiplexing of a plurality of row-wise electrodes to the lead is realized. That is, the odd-numbered electrodes of one of the two adjacent rows are all connected to the same row lead, and the even-numbered electrodes of the other of the two adjacent rows are all connected to the same row lead, so that the electrodes of the two rows are arranged in a crossed manner.
For any two adjacent columns of electrodes in the array electrodes, the electrodes of the first type of prepositioning in the first column in the two adjacent columns are connected to one column of leading wires at the end part of the first column, and the electrodes of the second type of prepositioning in the second column in two adjacent rows are connected to one column of leading wires at the end part of the second column.
That is, the odd-numbered or even-numbered electrodes of each column are connected to the same column lead, so that multiplexing of a plurality of electrode pairs on the column leads is realized. That is, the odd-numbered electrodes in one of the two adjacent columns are all connected to the same column lead, and the even-numbered electrodes in the other of the two adjacent columns are all connected to the same column lead, so that the two columns of electrodes are arranged in a crossed manner.
With the above arrangement, each electrode is connected to only one of the row-direction lead and the column-direction lead.
Generally, each electrode in the array electrode is a square of the same size.
In a possible implementation manner, in order to facilitate the arrangement of the leads and reduce the complexity of the wiring, each row-direction lead may be provided with a first side edge located on the array electrode, each column-direction lead may be provided with a second side edge located on the array electrode, and the first side edge and the second side edge are adjacent to each other.
Referring to fig. 7, the array electrode consists of 5 rows and 6 columns of electrodes. For any two adjacent rows of electrodes, such as the first row and the second row, the even numbered electrodes in the first row are connected to row lead R1, and the odd numbered electrodes in the second row are connected to row lead R2. For example, in the first column and the second column, the odd-numbered electrodes in the first column are connected to the column lead C1, and the even-numbered electrodes in the second column are connected to the column lead C2. The lead marks on each electrode, labeled as the lead to which the electrode is connected, such as the electrode labeled as R1 on the electrode, are connected to row lead R1, and such as the electrode labeled as C1 on the electrode, are connected to column lead C1.
The row leads R1-R5 in fig. 7 are all located on a first, left side of the array electrode, and the column leads C1-C6 in fig. 7 are all located on a second, lower side of the array electrode, the first side being adjacent to the second side.
Thus, for the array electrodes, the odd-numbered electrodes or the even-numbered electrodes in each row are connected to one row lead, so that the multiplexing of the row leads of the electrodes is realized; the odd-numbered electrodes or the even-numbered electrodes in each column are connected to one column lead, so that the multiplexing of the column leads of the electrodes is realized.
In one possible implementation, the droplet driving device may further include an insulating layer and an interconnection metal layer under the array electrode, the insulating layer being between the interconnection metal layer and the array electrode; the interconnection metal layer is provided with a contact hole which is not covered by the insulating layer, and the interconnection metal layer is electrically connected with the electrode in the array electrode through the contact hole.
On the preparation of the interconnection metal layer, a first conductive layer may be prepared on the substrate by a deposition process, and then patterning may be performed on the first conductive layer to form the interconnection metal layer. The deposition process herein may include, but is not limited to, sputtering, evaporation, and electroplating processes. The patterning method can be a stripping process, or can be photoetching and dry etching, or can be photoetching and wet etching.
When the insulating layer is prepared, depositing the insulating layer by utilizing a chemical vapor deposition, physical vapor deposition or spin coating process, wherein the thickness of the insulating layer is not more than 5 microns; the material of the insulating layer can be, but is not limited to, a multilayer structure formed by one or more of silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, zirconium oxide, polyimide, SU8 photoresist. The chemical vapor deposition may be Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), ion-coupled plasma chemical vapor deposition (ICP-CVD), and the physical vapor deposition may be sputtering or evaporation.
Through the design of the interconnection metal layer, a plurality of electrodes multiplexing the same lead can be interconnected with the lead through the interconnection metal layer. The interconnection metal layer may include m rows × n columns of row-direction metal strips and column-direction metal strips, the row-direction metal strips and the column-direction metal strips in each row of the interconnection metal layer are arranged at intervals, and the row-direction metal strips and the column-direction metal strips in each column of the interconnection metal layer are arranged at intervals.
That is, each row of the interconnection metal layer includes row-direction metal strips and column-direction metal strips arranged at intervals, for example, in a row, odd-numbered bits are the row-direction metal strips, and even-numbered bits are the column-direction metal strips. Or, in a row, even numbers are row-wise metal strips, and odd numbers are column-wise metal strips.
Each column of the interconnection metal layer also includes row-direction metal strips and column-direction metal strips arranged at intervals, for example, in one column, odd-numbered bits are row-direction metal strips, and even-numbered bits are column-direction metal strips. Or, in a column, even numbers are column-direction metal strips, and odd numbers are column-direction metal strips.
The row-wise metal strips extend in a row direction and the column-wise metal strips extend in a column direction.
The first type of row-direction metal strips positioned at the first side edge of the interconnection metal layer in each row are row-direction lead wires of the liquid drop driving device, and the first type of column-direction metal strips positioned at the second side edge of the interconnection metal layer in each column are column-direction lead wires of the liquid drop driving device; each row lead and each column lead are connected to an external drive system, and the drive system is configured to individually control the power supply and the power disconnection of each row lead and each column lead.
Two contact holes are formed in a second type of row-direction metal strip of the non-row-direction lead in the interconnection metal layer, and each second type of row-direction metal strip is connected with two electrodes arranged at intervals in the row direction through the two contact holes; two contact holes are arranged on a second type of column-direction metal strip of the non-column-direction lead in the interconnection metal layer, and each second type of column-direction metal strip is connected with two electrodes arranged at intervals in the column direction through the two contact holes.
In forming the contact hole, patterning may be performed by photolithography, and then the contact hole is etched using wet and dry methods, or directly formed by photolithography.
Referring to fig. 8, the interconnection metal layer includes 3 rows and 5 columns of row-direction metal strips and column-direction metal strips, the row-direction metal strips and the column-direction metal strips in each row are arranged at intervals, and the row-direction metal strips and the column-direction metal strips in each column of the interconnection metal layer are arranged at intervals.
The first type of row-direction metal strip positioned at the first side edge of the interconnection metal layer in each row is a row-direction lead of the liquid drop driving device, and the row-direction lead is generally provided with a contact hole for electrically connecting a corresponding electrode; the first type of column-wise metal strips located at the second side of the interconnection metal layer in each column are column-wise leads of the droplet driving device, and the column-wise leads are generally provided with a contact hole for electrically connecting a corresponding electrode.
For the second type of row-direction metal strip of the non-row-direction lead, two contact holes are usually respectively formed at two ends of the second type of row-direction metal strip, each contact hole is used for electrically connecting one electrode, and generally, two contact holes of the same second type of row-direction metal strip can be electrically connected with two electrodes spaced in the row direction. Similarly, for the second type of column-wise metal strip of the non-column-wise lead, two contact holes are usually formed at two ends of the second type of column-wise metal strip, each contact hole is used for electrically connecting one electrode, generally, two contact holes of the same second type of column-wise metal strip can electrically connect two electrodes spaced in the column direction, and a schematic diagram of connecting the electrodes through the contact holes on the metal strip is shown in fig. 9.
In manufacturing a droplet driving device, as shown in fig. 10A, it is a method flowchart of a manufacturing method of a droplet driving device provided in an embodiment of the present application, the manufacturing method of a droplet driving device including:
the interconnection metal layer comprises m rows multiplied by n columns of row-direction metal strips and column-direction metal strips, the row-direction metal strips and the column-direction metal strips in each row of the interconnection metal layer are arranged at intervals, and the row-direction metal strips and the column-direction metal strips in each column of the interconnection metal layer are arranged at intervals.
The substrate can be a glass sheet, Polyimide (PI) or a silicon sheet with an oxide layer on the surface.
When the interconnection metal layer is prepared on the substrate, a first conductive layer can be deposited on the substrate, and the first conductive layer is patterned for the first time to form the interconnection metal layer, wherein the first patterning comprises a stripping process, photoetching and dry etching or photoetching and wet etching. Cross-sectional schematic view of preparing an interconnect metal layer on a substrate as shown in fig. 11A, an interconnect metal layer 20 is formed on a substrate 10.
Depositing a first conductive layer and carrying out first patterning, wherein the thickness is 50-500 nm, the material can be one or more of Au, Pt, Al, Ni, Cr and Ti alloy or multilayer lamination, or can be ITO and other metal oxide conductive layers and Au, Pt, Al, Ni, Cr and Ti multilayer lamination. Among these, the deposition process may be, but is not limited to, sputtering, evaporation, and electroplating processes. The first patterning method may be a lift-off process, or lithography and dry etching, or lithography and wet etching.
in preparing the insulating layer on the interconnection metal layer, the insulating layer is deposited on the interconnection metal layer by using a Chemical Vapor Deposition (CVD) process including Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), or ion-coupled plasma chemical vapor deposition (ICP-CVD), a physical vapor deposition (pvd) process including sputtering or evaporation, or a spin-on coating process. Cross-sectional schematic view of the insulating layer formed on the interconnect metal layer as shown in fig. 11B, an insulating layer 30 is formed on the interconnect metal layer 20.
Depositing an insulating medium layer (namely the insulating layer), and depositing the insulating medium layer by utilizing a chemical vapor deposition, physical vapor deposition or spin coating process, wherein the thickness of the medium layer is not more than 5 microns; the material of the dielectric layer can be, but is not limited to, a multilayer structure formed by one or more of silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, zirconium oxide, polyimide, SU8 photoresist. The chemical vapor deposition may be Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), ion-coupled plasma chemical vapor deposition (ICP-CVD), and the physical vapor deposition may be sputtering or evaporation.
and when forming contact holes which are not covered by the insulating layer on each row-direction metal strip and each column-direction metal strip, carrying out second patterning on the insulating layer through photoetching to form the contact holes which are not covered by the insulating layer on the row-direction metal strips and the column-direction metal strips, wherein the second patterning comprises wet etching and dry etching of the contact holes or direct photoetching to form the contact holes, wherein: forming a contact hole in the first row-wise metal strip at the first side of the interconnection metal layer in each row to connect to an electrode in the row at the position of the first side; forming two spaced contact holes on the second-type row-direction metal strip at the rest positions in each row so as to connect two electrodes arranged at intervals in the row; forming a contact hole on the first column-direction metal strip positioned at the second side edge of the interconnection metal layer in each column so as to connect an electrode positioned at the second side edge in the column; forming two spaced contact holes on the second-type column-direction metal strips at the rest positions in each column to connect two electrodes arranged at intervals in the column; the first side edge and the second side edge are adjacent.
A schematic cross-sectional view after forming contact holes in the metal bars is shown in fig. 11C, and contact holes 31 are formed in the interconnection metal layer 20.
Forming a contact hole on the row-direction metal strip positioned on the first side edge of the interconnection metal layer and the vertical metal strip positioned on the second side edge of the interconnection metal layer when the contact hole which is not covered by the insulating layer is formed on each row-direction metal strip and each column-direction metal strip, wherein the contact hole is used for connecting an electrode at the position of the contact hole, and the first side edge is adjacent to the second side edge;
and forming a contact hole at two ends of the other row-direction metal strips and the other column-direction metal strips respectively, wherein the distance between the two contact holes on each metal strip is larger than the preset distance so as to be used for connecting two electrodes arranged at intervals.
The conductive metal layer comprises m rows x n columns of array electrodes, each row-direction metal strip is connected with the electrode at the corresponding position in the row through the contact hole, each column-direction metal strip is connected with the electrode at the corresponding position in the column through the contact hole, the electrodes connected with the row-direction metal strips in the same row are all electrically connected with the same row-direction lead, and the electrodes connected with the column-direction metal strips in the same column are all electrically connected with the same column-direction lead.
When the conductive metal layer is prepared on the insulating layer, a second conductive layer is deposited on the insulating layer, third patterning is carried out on the second conductive layer to form the conductive metal layer, and the third patterning comprises a stripping process, photoetching and dry etching or photoetching and wet etching. A schematic cross-sectional view after preparing a conductive metal layer on the insulating layer is shown in fig. 11D, and a conductive metal layer 40 is formed on the insulating layer 30.
And after the contact hole is prepared, depositing a second conductive layer and patterning to form an array electrode. The second conductive layer has a thickness of 50-500 nm, and can be made of one or more of Au, Pt, Al, Ni, Cr, and Ti, or made of metal oxide conductive layer such as ITO, or multi-layer stack of Au, Pt, Al, Ni, Cr, and Ti. Among these, the deposition process may be, but is not limited to, sputtering, evaporation, and electroplating processes. The patterning method can be a stripping process, or can be photoetching and dry etching, or can be photoetching and wet etching.
In one possible implementation manner, referring to fig. 10B, after the conductive metal layer is prepared on the insulating layer, the preparation method further includes:
depositing a dielectric layer, namely depositing an insulating dielectric layer by utilizing a chemical vapor deposition, physical vapor deposition or spin coating process, wherein the thickness of the dielectric layer is not more than 5 microns; the material of the dielectric layer can be, but is not limited to, a multilayer structure formed by one or more of silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, zirconium oxide, polyimide, SU8 photoresist, teflon and Cytop. The chemical vapor deposition may be Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), ion-coupled plasma chemical vapor deposition (ICP-CVD), and the physical vapor deposition may be sputtering or evaporation. A schematic cross-sectional view after the dielectric layer is formed on the conductive metal layer is shown in fig. 11E, where a dielectric layer 50 is formed on the electrical metal layer 40.
When the surface super-hydrophobic property is formed into the first super-hydrophobic layer, the super-hydrophobic layer is formed on the surface of the device by depositing a surface super-hydrophobic material or a structural super-hydrophobic material. The super-hydrophobic material can be, but is not limited to, a multi-layer structure formed by one or more of teflon and Cytop. The deposition method may be spin coating (including baking), doctor blading or thermal evaporation. Fig. 11F shows a schematic cross-sectional view of the first super-hydrophobic layer formed on the dielectric layer, and a first super-hydrophobic layer 60 is formed on the dielectric layer 50.
The droplet driving device may have two structures, one structure is an open device structure without a top cover plate, as shown in fig. 12A, the droplet driving device sequentially includes, from bottom to top, a substrate 10, an interconnection metal layer 20, an insulating layer 30, an array electrode 40, a dielectric layer 50, and a first super-hydrophobic layer 60, where the first super-hydrophobic layer 60 carries droplets.
The substrate can be a glass sheet, Polyimide (PI) or a silicon sheet with an oxide layer on the surface.
Another structure is a closed structure requiring a top cover plate, in which case, after the first super-hydrophobic layer is formed, the preparation method further includes: set up closed top apron on first super hydrophobic layer, the top apron includes from supreme second super hydrophobic layer, top conducting layer and the top substrate down.
As shown in fig. 12B, the droplet driving device further includes a top cover plate encapsulated on the first super-hydrophobic layer 60, the top cover plate including a second super-hydrophobic layer 70, a top conductive layer 80, and a top substrate 90 from bottom to top.
The top substrate can be a silicon wafer, a glass sheet or a polymer plastic material, the top conductive layer is a metal conductive material, and the first super-hydrophobic layer and the second super-hydrophobic layer are both made of Teflon or cytop materials.
The larger-scale electrode array is the development trend of a liquid drop array driving device, the number of the leads of the electrode array is greatly reduced through an electrode multiplexing mode, the design complexity of the driving array and the complexity of a peripheral driving system are reduced, and the manufacturing cost is further reduced. Table 1 shows a comparison of the solutions provided in the present application, the first prior art solution provided in fig. 4, and the second prior art solution provided in fig. 5.
TABLE 1
According to the scheme, on one hand, the multiplication of the number of leads caused by a single lead mode is avoided, and on the other hand, the introduction of a complicated thin film transistor in an active matrix driving technology is avoided. From another angle, the scheme has the advantage of high driving efficiency of an independent lead mode, also has the advantage of low lead number of active matrix control, and is the optimal selection of the arrayed liquid drop driving device.
To sum up, the liquid drop driving device provided by the application can greatly reduce the number of leads of the arrayed driving electrodes, the system complexity and the process manufacturing difficulty by arranging the arrayed electrodes and multiplexing the plurality of electrodes, thereby reducing the cost and the control complexity.
The electrode configuration and structure are protected in the technology of droplet driving in lab-on-a-chip, microfluidic chips. The liquid drop driving method and the liquid drop driving device have the advantages that the liquid drop driving method and the liquid drop driving device have the characteristic of localization, and the quantity of leads, the complexity of an array and the complexity of a peripheral driving system are reduced through electrode multiplexing. The liquid drop driving device prepared by the preparation method provided by the application is applied to microfluidic chips and lab-on-a-chip chips, and can play a role in greatly reducing research and development and manufacturing cost.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (9)
1. A method of manufacturing a droplet driving device, the method comprising:
preparing an interconnection metal layer on a substrate, wherein the interconnection metal layer comprises m rows multiplied by n columns of row-direction metal strips and column-direction metal strips, the row-direction metal strips and the column-direction metal strips in each row of the interconnection metal layer are arranged at intervals, and the row-direction metal strips and the column-direction metal strips in each column of the interconnection metal layer are arranged at intervals;
preparing an insulating layer on the interconnection metal layer;
forming a contact hole uncovered by an insulating layer on each of the row-direction metal strips and the column-direction metal strips;
preparing a conductive metal layer on the insulating layer, wherein the conductive metal layer comprises m rows x n columns of array electrodes, each row-direction metal strip is connected with the electrode at the corresponding position in the row through a contact hole, each column-direction metal strip is connected with the electrode at the corresponding position in the column through a contact hole, the electrodes connected with the row-direction metal strips in the same row are all electrically connected with the same row-direction lead, and the electrodes connected with the column-direction metal strips in the same column are all electrically connected with the same column-direction lead.
2. The method of claim 1, wherein the fabricating an interconnect metal layer on a substrate comprises:
depositing a first conducting layer on the substrate, and carrying out first-time patterning on the first conducting layer to form the interconnection metal layer, wherein the first-time patterning comprises a stripping process, photoetching and dry etching or photoetching and wet etching.
3. The method according to claim 1, wherein the preparing an insulating layer on the interconnection metal layer comprises:
depositing the insulating layer on the interconnect metal layer using a chemical vapor deposition, including Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), or ion-coupled plasma chemical vapor deposition (ICP-CVD), a physical vapor deposition, including sputtering or evaporation, or a spin-on process.
4. The method according to claim 1, wherein the forming of the contact holes not covered by the insulating layer on each of the row-direction metal strips and the column-direction metal strips comprises:
patterning the insulating layer for the second time by photolithography to form contact holes uncovered by the insulating layer on the row-wise and column-wise metal strips, the patterning for the second time comprising wet and dry etching the contact holes, or direct photolithography to form the contact holes,
wherein: forming a contact hole on a first row-wise metal strip positioned at the first side of the interconnection metal layer in each row to connect with an electrode positioned at the first side in the row; forming two spaced contact holes on the second-type row-direction metal strip at the rest positions in each row so as to connect two electrodes arranged at intervals in the row;
forming a contact hole on the first column-direction metal strip positioned at the second side edge of the interconnection metal layer in each column so as to connect an electrode positioned at the second side edge in the column; forming two spaced contact holes on the second-type column-direction metal strips at the rest positions in each column to connect two electrodes arranged at intervals in the column;
the first side edge and the second side edge are adjacent.
5. The method according to claim 1, wherein the preparing a conductive metal layer on the insulating layer comprises:
and depositing a second conducting layer on the insulating layer, and carrying out third patterning on the second conducting layer to form the conducting metal layer, wherein the third patterning comprises a stripping process, photoetching and dry etching or photoetching and wet etching.
6. The production method according to claim 1, wherein after the production of the conductive metal layer on the insulating layer, the production method further comprises:
preparing a dielectric layer on the conductive metal layer by adopting a deposition mode;
and depositing a super-hydrophobic material or a structural super-hydrophobic material on the surface of the dielectric layer to form a first super-hydrophobic layer.
7. The method of manufacturing according to claim 6, wherein after forming the first superhydrophobic layer, the method further comprises:
set up closed top apron on the first super hydrophobic layer, the top apron includes from the second super hydrophobic layer, top conducting layer and the top substrate of supreme down.
8. The method for preparing the solar cell module according to claim 7, wherein the top substrate can be a silicon wafer, a glass sheet or a polymer plastic material, the top conductive layer is a metal conductive material, and the first super-hydrophobic layer and the second super-hydrophobic layer are both made of Teflon or cytop materials.
9. The method according to claim 1, wherein the forming of the contact holes not covered by the insulating layer on each of the row-direction metal strips and the column-direction metal strips comprises:
forming a contact hole on the row-direction metal strip positioned on the first side edge of the interconnection metal layer and the vertical metal strip positioned on the second side edge of the interconnection metal layer so as to be connected with an electrode at the position of the contact hole, wherein the first side edge is adjacent to the second side edge;
and forming a contact hole at two ends of the other row-direction metal strips and the other column-direction metal strips respectively, wherein the distance between the two contact holes on each metal strip is larger than the preset distance so as to be used for connecting two electrodes arranged at intervals.
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Application publication date: 20201201 |