CN112003122A - Sub-nanosecond infrared solid laser capable of adjusting Q in acousto-optic mode and control method thereof - Google Patents
Sub-nanosecond infrared solid laser capable of adjusting Q in acousto-optic mode and control method thereof Download PDFInfo
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- CN112003122A CN112003122A CN202010839448.8A CN202010839448A CN112003122A CN 112003122 A CN112003122 A CN 112003122A CN 202010839448 A CN202010839448 A CN 202010839448A CN 112003122 A CN112003122 A CN 112003122A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0407—Liquid cooling, e.g. by water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
Abstract
The invention relates to a subnanosecond infrared solid laser for acousto-optic Q-switching, which comprises: a laser source and a laser resonant cavity; the laser resonator includes: a resonant optical path and acousto-optic Q-switch Q1; laser output by the laser source passes through the resonant light path to generate resonant light and output to the acousto-optic Q switch, and the acousto-optic Q switch generates laser pulse and outputs the laser pulse; the laser resonant cavity is simple and small in structure, and by means of the short optical resonant cavity and the small spot size, subnanosecond laser pulses smaller than 6ns can be obtained under the condition that Q is adjusted only through acousto-optic modulation, and excellent seed laser is provided for a subnanosecond infrared/green laser with higher power.
Description
Technical Field
The invention relates to the field of lasers, in particular to a sub-nanosecond infrared solid laser with acousto-optic Q-switching and a control method thereof.
Background
The pulse width range of a nanosecond solid laser of a conventional acousto-optic Q-switching is in the order of 10-100 nanoseconds, the requirements cannot be met for processing of brittle materials with higher requirements, and a picosecond laser has no advantages in cost and has excessive performance.
Against this background, the application requirements for sub-nanosecond lasers, in particular sub-nanosecond 532nm green lasers, arise.
Disclosure of Invention
The invention provides a sub-nanosecond infrared solid laser for acousto-optic Q-switching, aiming at the technical problems in the prior art, and solves the problem that the sub-nanosecond laser is lacked in the prior art.
The technical scheme for solving the technical problems is as follows: an acousto-optic Q-switched subnanosecond infrared solid-state laser comprising: a laser source and a laser resonant cavity;
the laser resonator comprises: a resonant optical path and acousto-optic Q-switch Q1;
laser output by the laser source passes through the resonant light path to generate resonant light and output to the acousto-optic Q switch, and the acousto-optic Q switch generates laser pulses and outputs the laser pulses.
A control method of a subnanosecond infrared solid laser with acousto-optic Q-switching is characterized by comprising the following steps:
step 1, a master control system controls a semiconductor module to emit light, a water cooling system works at the same time, and a temperature control system maintains the temperature of the semiconductor module to be stable;
step 2, the pumping light emitted by the semiconductor module passes through the collimation system and is focused on the end face of the laser crystal, so that the laser crystal generates spontaneous radiation after absorption, and stable resonant light is gradually formed;
step 3, matching the working state of the laser resonant cavity by adjusting the output power of the semiconductor module to enable the laser resonant cavity to be in a set optimal working mode;
and 4, performing pulse modulation through the acousto-optic Q switch driver to obtain sub-nanosecond laser pulses smaller than 6 ns.
The invention has the beneficial effects that: according to the acousto-optic Q-switched sub-nanosecond infrared solid laser and the control method thereof, the laser resonant cavity is simple and small in structure, sub-nanosecond laser pulses smaller than 6ns can be obtained under the condition of acousto-optic Q switching only through the short optical resonant cavity and the small light spot size, and excellent seed laser is provided for a sub-nanosecond infrared/green laser with higher power.
On the basis of the technical scheme, the invention can be further improved as follows.
Further, the resonant optical path comprises a collimation system, a plano-convex mirror M1 and a laser crystal C1; the laser direction output by the laser source is the direction of an incident light path, and the collimating system, the plano-convex mirror M1 and the laser crystal C1 are arranged on the incident light path;
the laser is collimated by the collimating system and then enters the plane of the plano-convex mirror M1, and the laser crystal C1 is arranged between the convex surface of the plano-convex mirror M1 and the acousto-optic Q switch Q1.
Further, the collimation system includes a lens F1 and a lens F2 arranged in parallel.
Further, the laser resonant cavity also comprises a plane full-reflecting mirror M2 arranged at the end of the acousto-optic Q-switch Q1 far away from the resonant optical path.
Further, the laser crystal C1 is a 3 × 8mm laser crystal, and the effective length along the laser direction is 8 mm; the laser diameter of the laser source output is smaller than 400 um.
Further, the laser source comprises a main control circuit, a semiconductor module driving circuit, a Q driver control circuit, an acousto-optic Q switch driver and a high-precision temperature control circuit; the master control circuit is in control connection with the semiconductor module driving circuit, the AOM control circuit and the high-precision temperature control circuit;
the semiconductor module driving circuit outputs a required direct current signal to drive the semiconductor module to emit pump light;
the Q driver control circuit outputs a control signal to act on the acousto-optic Q switch driver, the acousto-optic Q switch driver outputs a corresponding radio frequency signal to act on the acousto-optic Q switch Q1 to realize modulation of a pulse mode output by the laser resonant cavity through the diffraction effect of an ultrasonic field, and laser pulses with required frequency are generated;
the high-precision temperature control system is used for controlling the temperature of the semiconductor module and the resonant optical path.
Further, the laser also includes a water cooling system including a groined water channel covering all heat sources.
The beneficial effect of adopting the further scheme is that: the plano-convex mirror M1 and the plane total reflection mirror M2 form a linear two-mirror laser resonant cavity, the structure is simple and small, and a shorter optical resonant cavity is obtained, for example, the length of the laser resonant cavity can be 40 mm; laser crystal C1 is a short laser crystal. The diameter of laser output by the laser source is less than 400um, under the condition, an 80MHz acousto-optic Q switch is used for Q modulation, and laser pulses less than 6ns can be obtained within the range of 50KHz-100 KHz; the water cooling system is provided with constant-temperature circulating clean water by an external water cooler, and the laser metal structure, the laser crystal, the acousto-optic Q switch, the Q driver, the LD module and the circuit board are cooled through a water channel which is arranged in the laser according to actual working conditions.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a laser resonator of a sub-nanosecond infrared solid-state laser for acousto-optic Q-switching according to the present invention;
fig. 2 is a flowchart of an embodiment of a method for controlling a sub-nanosecond infrared solid-state laser for acousto-optic Q-switching according to the present invention.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
The invention provides a sub-nanosecond infrared solid laser for acousto-optic Q modulation, which comprises: a laser source and a laser resonator.
The laser resonator includes: a resonant optical path and an acousto-optic Q-switch Q1.
Laser output by the laser source passes through the resonant light path to generate resonant light and is output to the acousto-optic Q switch, and the acousto-optic Q switch generates laser pulses and outputs the laser pulses.
The sub-nanosecond infrared solid laser capable of regulating Q in the acousto-optic mode provided by the invention has the advantages that the laser resonant cavity is simple and small in structure, sub-nanosecond laser pulses smaller than 6ns can be obtained under the condition of regulating Q in the acousto-optic mode only through the shorter optical resonant cavity and the small spot size, and excellent seed laser is provided for the sub-nanosecond infrared/green laser with higher power.
Example 1
Fig. 1 is a schematic structural diagram of an embodiment of a laser resonant cavity of an acousto-optic Q-switched sub-nanosecond infrared solid-state laser provided by the present invention, and as can be seen from fig. 1, the embodiment of the laser includes: a laser source and a laser resonator.
The laser resonator includes: a resonant optical path and an acousto-optic Q-switch Q1.
Laser output by the laser source passes through the resonant light path to generate resonant light and is output to the acousto-optic Q switch, and the acousto-optic Q switch generates laser pulses and outputs the laser pulses.
The sub-nanosecond infrared solid laser capable of regulating Q in the acousto-optic mode provided by the invention has the advantages that the laser resonant cavity is simple and small in structure, sub-nanosecond laser pulses smaller than 6ns can be obtained under the condition of regulating Q in the acousto-optic mode only through the shorter optical resonant cavity and the small spot size, and excellent seed laser is provided for the sub-nanosecond infrared/green laser with higher power.
Further, the resonant optical path comprises a collimation system, a plano-convex mirror M1 and a laser crystal C1; the laser direction output by the laser source is the incident light path direction, and the collimating system, the plano-convex mirror M1 and the laser crystal C1 are arranged on the incident light path.
The laser is collimated by the collimating system and then is emitted into the plane of the plano-convex mirror M1, and the laser crystal C1 is arranged between the convex surface of the plano-convex mirror M1 and the acousto-optic Q switch Q1; the convex surface of the plano-convex mirror M1 is used as a resonator mirror to compensate the thermal lens of the laser crystal C1.
Specifically, the collimating system includes a lens F1 and a lens F2 arranged in parallel.
Preferably, the laser resonator further comprises a planar holomirror M2 disposed at the end of the acousto-optic Q-switch Q1 remote from the resonant optical path, the planar holomirror M2 acting as a tail mirror of the resonator and being used to tune the optical resonator.
By the linear two-mirror laser resonant cavity with simple and compact structure, a shorter optical resonant cavity is obtained, and the cavity length of the laser resonant cavity can be 40mm, for example.
Preferably, the laser crystal C1 is a 3 × 8mm laser crystal, the effective length along the laser direction is 8mm, and the laser diameter output by the laser source is less than 400 um.
Under the condition, an 80MHz acousto-optic Q switch is used for Q switching, and laser pulses smaller than 6ns can be obtained within the range of 50KHz-100 KHz.
Preferably, the laser source comprises a main control circuit, a semiconductor module driving circuit, a Q driver control circuit, an acousto-optic Q switch driver and a high-precision temperature control circuit; the main control circuit is in control connection with the semiconductor module driving circuit, the AOM control circuit and the high-precision temperature control circuit; the main function of the main control circuit is to monitor and control the working state of each part of the system.
The semiconductor module driving circuit outputs a required direct current signal to drive the semiconductor module to emit pump light; the pump light is a light source excited and radiated by the laser crystal C1, and the power of the pump light can be directly controlled by the driving power supply.
The Q driver control circuit outputs a control signal to act on the acousto-optic Q switch driver, the acousto-optic Q switch driver outputs a corresponding radio frequency signal to act on the acousto-optic Q switch Q1, and the pulse mode output by the laser resonant cavity is modulated through the diffraction effect of an ultrasonic field to generate laser pulses with required frequency.
The high-precision temperature control system is used for controlling the temperature of the semiconductor module and the resonant optical path, maintaining the temperature stability range not to exceed plus or minus 0.1 ℃, and communicating with the main control board through a serial port to realize real-time temperature monitoring and control.
Preferably, the laser further comprises a water cooling system comprising a channel covering all of the heat sources. The water cooling system is provided with constant-temperature circulating clean water by an external water cooler, and the laser metal structure, the laser crystal, the acousto-optic Q switch, the Q driver, the LD module and the circuit board are cooled through a water channel which is arranged in the laser according to actual working conditions.
Example 2
Embodiment 2 provided by the present invention is an embodiment of a method for controlling a laser resonant cavity of a sub-nanosecond infrared solid-state laser for acousto-optic Q-switching provided by the present invention, and as shown in fig. 2, is a flowchart of an embodiment of a method for controlling a sub-nanosecond infrared solid-state laser for acousto-optic Q-switching provided by the present invention, and as can be seen from fig. 2, the embodiment of the control method includes:
step 1, a main control system controls a semiconductor module to emit light, a water cooling system works at the same time, and a temperature control system maintains the temperature of the semiconductor module to be stable.
And 2, focusing the pump light emitted by the semiconductor module to the end face of the laser crystal through the collimating system, so that the laser crystal generates spontaneous radiation after absorption and gradually forms stable resonant light.
Step 3, matching the working state of the laser resonant cavity by adjusting the output power of the semiconductor module to enable the laser resonant cavity to be in a set optimal working mode; the optical mode is TEM00 fundamental mode, as power/stability.
And 4, performing pulse modulation through an acousto-optic Q switch driver to obtain sub-nanosecond laser pulses smaller than 6 ns.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. An acousto-optic Q-switched sub-nanosecond infrared solid-state laser, comprising: a laser source and a laser resonant cavity;
the laser resonator comprises: a resonant optical path and acousto-optic Q-switch Q1;
laser output by the laser source passes through the resonant light path to generate resonant light and output to the acousto-optic Q switch, and the acousto-optic Q switch generates laser pulses and outputs the laser pulses.
2. The laser of claim 1, wherein the resonant optical path comprises a collimating system, a plano-convex mirror M1, and a laser crystal C1; the laser direction output by the laser source is the direction of an incident light path, and the collimating system, the plano-convex mirror M1 and the laser crystal C1 are arranged on the incident light path;
the laser is collimated by the collimating system and then enters the plane of the plano-convex mirror M1, and the laser crystal C1 is arranged between the convex surface of the plano-convex mirror M1 and the acousto-optic Q switch Q1.
3. The laser of claim 2, wherein the collimating system comprises a lens F1 and a lens F2 arranged in parallel.
4. The laser of claim 2, wherein the laser resonator further comprises a planar holomirror M2 disposed at an end of the acousto-optic Q-switch Q1 remote from the resonant optical path.
5. The laser of claim 2, wherein the laser crystal C1 is a 3 x 8mm laser crystal with an effective length of 8mm in the laser direction; the laser diameter of the laser source output is smaller than 400 um.
6. The laser of claim 1, wherein the laser source comprises a master control circuit, a semiconductor module driver circuit, a Q driver control circuit, an acousto-optic Q-switch driver, and a high precision temperature control circuit; the master control circuit is in control connection with the semiconductor module driving circuit, the AOM control circuit and the high-precision temperature control circuit;
the semiconductor module driving circuit outputs a required direct current signal to drive the semiconductor module to emit pump light;
the Q driver control circuit outputs a control signal to act on the acousto-optic Q switch driver, the acousto-optic Q switch driver outputs a corresponding radio frequency signal to act on the acousto-optic Q switch Q1 to realize modulation of a pulse mode output by the laser resonant cavity through the diffraction effect of an ultrasonic field, and laser pulses with required frequency are generated;
the high-precision temperature control system is used for controlling the temperature of the semiconductor module and the resonant optical path.
7. The laser of claim 1, further comprising a water cooling system comprising a welled water channel covering all heat sources.
8. A method of controlling a laser according to any of claims 1-7, the method comprising:
step 1, a master control system controls a semiconductor module to emit light, a water cooling system works at the same time, and a temperature control system maintains the temperature of the semiconductor module to be stable;
step 2, the pumping light emitted by the semiconductor module passes through the collimation system and is focused on the end face of the laser crystal, so that the laser crystal generates spontaneous radiation after absorption, and stable resonant light is gradually formed;
step 3, matching the working state of the laser resonant cavity by adjusting the output power of the semiconductor module to enable the laser resonant cavity to be in a set optimal working mode;
and 4, performing pulse modulation through the acousto-optic Q switch driver to obtain sub-nanosecond laser pulses smaller than 6 ns.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113399821A (en) * | 2021-05-28 | 2021-09-17 | 大族激光科技产业集团股份有限公司 | Laser bitmap marking device and laser bitmap marking method |
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