CN112002744B - Display panel and manufacturing method thereof - Google Patents
Display panel and manufacturing method thereof Download PDFInfo
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- CN112002744B CN112002744B CN202010812662.4A CN202010812662A CN112002744B CN 112002744 B CN112002744 B CN 112002744B CN 202010812662 A CN202010812662 A CN 202010812662A CN 112002744 B CN112002744 B CN 112002744B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K50/00—Organic light-emitting devices
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- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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Abstract
The application discloses a display panel and a manufacturing method thereof, wherein the display panel comprises a transparent substrate, and a color filter and a quantum dot color conversion structure which are sequentially arranged on the transparent substrate; the quantum dot color conversion structure comprises a resonant cavity defining layer and a quantum dot color conversion layer which are sequentially arranged on one side of the color filter, which is far away from the transparent substrate; and the quantum dot color conversion layer is at least arranged in part of the reflective resonant cavity and is in contact with the color filter. The reflective resonant cavity in the application can narrow the emission spectrum of the quantum dots in the quantum dot color conversion layer, so that the display color gamut of the display panel is favorably further improved, and the display quality is further improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a manufacturing method thereof.
Background
The rapid development of the OLED (Organic Light Emitting Diode) display technology has promoted curved surface and flexible display touch products to rapidly enter the market, and the technology update in the related field is also a change day by day.
In recent years, Quantum Dot (QDs) materials have become the core of a new display technology due to their low cost and excellent optical properties. The QD-OLED display panel combines an OLED electroluminescence technology and a quantum dot photoluminescence technology, and includes an OLED array substrate emitting blue light, a quantum dot photoconversion film, and a Color Filter (CF). The QD-OLED display panel utilizes a blue-light OLED as a light source to excite red/green quantum dots in the quantum-dot photoconversion film, the red quantum dots can excite red light to penetrate through the color filter after receiving the blue light, the green quantum dots can excite green light to penetrate through the color filter after receiving the blue light, and the blue light can directly penetrate through the color filter, so that full-color display is formed.
However, with the continuous development of display technologies, the display quality requirement of people on the display panel is higher and higher, and the current QD-OLED display panel cannot meet the market demand in the future, so that it is necessary to develop a new display panel to further improve the color gamut of the display panel, thereby further improving the display quality to meet the market demand.
Disclosure of Invention
The application provides a display panel and a manufacturing method thereof, and the reflective resonant cavity filled with the quantum dot color conversion layer is arranged on the color filter, so that the reflective resonant cavity effectively narrows the quantum dot emission spectrum in the quantum dot color conversion layer, the display color gamut is further improved, and the display quality is further improved.
The application provides a display panel, which comprises a transparent substrate, and a color filter and a quantum dot color conversion structure which are sequentially arranged on the transparent substrate;
the quantum dot color conversion structure comprises a resonant cavity defining layer and a quantum dot color conversion layer which are sequentially arranged on one side of the color filter, which is far away from the transparent substrate; and the quantum dot color conversion layer is at least arranged in part of the reflective resonant cavity and is in contact with the color filter.
Optionally, the length of the reflective resonant cavity
And L is less than 1 micron; wherein n is an integer greater than or equal to 1, and λ is the light emission wavelength of the quantum dot color conversion layer in the reflective resonant cavity.
Optionally, the height of the reflective resonant cavity ranges from 50 nm to 200 nm.
Optionally, the color filter includes a plurality of color resistance units distributed in an array; each color resistance unit corresponds to a plurality of reflective resonant cavities;
the color resistance units comprise a red color resistance unit, a green color resistance unit and a blue color resistance unit; the quantum dot color conversion layer is positioned in the plurality of reflective resonant cavities corresponding to the red color resistance units and the green color resistance units.
Optionally, the quantum dot color conversion layer includes a red quantum dot color conversion unit located in the plurality of reflective resonant cavities corresponding to the red color resistance unit, and a green quantum dot color conversion unit located in the plurality of reflective resonant cavities corresponding to the green color resistance unit.
Optionally, the color filter further includes a light-shielding layer; the shading layer is provided with a plurality of pixel openings which are arranged in one-to-one correspondence to the plurality of color resistance units; each color resistance unit is positioned in the corresponding pixel opening;
the shading layer is arranged corresponding to the plurality of reflective resonant cavities; the quantum dot color conversion structure further comprises a plurality of retaining wall structures located in the reflective resonant cavity corresponding to the light shielding layers.
The application also provides a manufacturing method of the display panel, which comprises the following steps:
providing a transparent substrate, and forming a color filter on the transparent substrate;
forming a resonant cavity defining layer on one side of the color filter far away from the transparent substrate; a plurality of reflection type resonant cavities which are periodically distributed are formed on the resonant cavity defining layer so as to expose the corresponding color filters;
and forming a quantum dot color conversion layer in at least part of the reflective resonant cavity, and enabling the quantum dot color conversion layer to be in contact with the exposed color filter, wherein the quantum dot color conversion layer and the resonant cavity definition layer form a quantum dot color conversion structure.
Optionally, forming a resonant cavity defining layer on a side of the color filter away from the transparent substrate includes the following steps:
covering a light resistance layer on one side of the color filter far away from the transparent substrate;
and forming a plurality of reflection type resonant cavities which are periodically distributed on the photoresist layer by adopting a nano-imprinting technology so as to form a resonant cavity definition layer.
Optionally, the color filter includes a plurality of color resistance units distributed in an array; each color resistance unit corresponds to a plurality of reflective resonant cavities; the color resistance units comprise a red color resistance unit, a green color resistance unit and a blue color resistance unit;
the forming of the quantum dot color conversion layer in at least part of the reflective resonant cavity comprises the following steps:
and forming a red quantum dot color conversion unit in the plurality of reflective resonant cavities corresponding to the red color resistance units, and forming a green quantum dot color conversion unit in the plurality of reflective resonant cavities corresponding to the green color resistance units to form a quantum dot color conversion layer.
Optionally, the color filter further includes a light-shielding layer; the shading layer is provided with a plurality of pixel openings which are arranged in one-to-one correspondence to the plurality of color resistance units; each color resistance unit is positioned in the corresponding pixel opening; the shading layer is arranged corresponding to the plurality of reflective resonant cavities;
the forming of a red quantum dot color conversion unit in the plurality of reflective resonant cavities corresponding to the red color resistance unit and a green quantum dot color conversion unit in the plurality of reflective resonant cavities corresponding to the green color resistance unit includes the following steps:
forming a retaining wall structure in the plurality of reflective resonant cavities corresponding to the light shielding layer, wherein the retaining wall structure extends to one side of the resonant cavity defining layer away from the color filter; the retaining wall structure is surrounded into a plurality of openings which are in one-to-one correspondence with the plurality of color resistance units;
and forming a red quantum dot color conversion unit in the opening corresponding to the red color resistance unit and forming a green quantum dot color conversion unit in the opening corresponding to the green color resistance unit by adopting an ink-jet printing technology.
According to the display panel and the manufacturing method thereof, the periodically-distributed reflective resonant cavities are prepared on the traditional color filter through the nanoimprint technology, and the patterned quantum dot color conversion layer is prepared through the ink-jet printing technology, so that the manufacturing process is simple, and mass production is easy to realize; and the half-wave width of the luminescence spectrum of the quantum dot color conversion layer is narrow, which is beneficial to improving the display color gamut of the display panel, and the reflective resonant cavity has a selective enhancement effect on the luminescence of the quantum dots in the quantum dot color conversion layer, so that the emission spectrum of the quantum dots can be narrowed, the display color gamut of the display panel can be further improved, and the display quality of the display panel can be further improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic partial cross-sectional structure diagram of a display panel according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram illustrating a principle of light enhancement of a reflective resonant cavity to a red quantum dot conversion unit in a display panel according to an embodiment of the present disclosure.
Fig. 3 is a schematic partial cross-sectional view of another display panel according to an embodiment of the present disclosure.
Fig. 4 is a schematic flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure.
Fig. 5a is a schematic structural diagram of forming a color filter on a transparent substrate in a manufacturing method of a display panel according to an embodiment of the present disclosure.
FIG. 5b is a schematic diagram of a structure of forming a photoresist layer on the basis of FIG. 5 a.
Fig. 5c is a schematic structural diagram of a reflective resonant cavity formed on the basis of fig. 5 b.
Fig. 5d is a schematic structural diagram of a resonant cavity defining layer formed on the basis of fig. 5 c.
Fig. 5e is a schematic structural diagram of a retaining wall structure formed on the basis of fig. 5 d.
Fig. 5f is a schematic structural diagram of forming a quantum dot color conversion layer on the basis of fig. 5 e.
Fig. 5g is a schematic structural diagram of forming an array substrate and a light emitting device on the basis of fig. 5 f.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be operated in a particular orientation, and thus are not to be construed as limiting the present application. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; may be mechanically, electrically or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or may be connected through the use of two elements or the interaction of two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Further, the present application may repeat reference numerals and/or reference letters in the various examples for simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or arrangements discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
As shown in fig. 1, the present embodiment provides a display panel 1, where the display panel 1 includes a transparent substrate 2 and an array substrate 3, which are oppositely disposed, a color filter 4 and a quantum dot color conversion structure 5, which are sequentially disposed on one side of the transparent substrate 2 close to the array substrate 3, and a plurality of light emitting devices 6 disposed on one side of the array substrate 3 close to the transparent substrate 2; the quantum dot color conversion structure 5 comprises a resonant cavity defining layer 7 and a quantum dot color conversion layer 8 which are sequentially arranged on one side, far away from the transparent substrate 2, of the color filter 4, a plurality of reflection type resonant cavities 9 which are periodically distributed are formed on the resonant cavity defining layer 7, and the quantum dot color conversion layer 8 is at least arranged in the partial reflection type resonant cavities 9 and is in contact with the color filter 4.
Specifically, the transparent substrate 2 may be a rigid glass substrate or a flexible substrate; the color filter 4 is a conventional filter, and the color filter 4 comprises a plurality of color resistance units distributed in an array; each color resistance unit corresponds to a plurality of reflective resonant cavities 9; the color resistance units include a red color resistance unit 10, a green color resistance unit 11, and a blue color resistance unit 12, wherein the blue color resistance unit 12 may also be replaced with a transparent color resistance unit.
Specifically, the light emitting device 6 includes any one of a blue light LED, a blue light OLED, a Mini LED, and a Micro LED, and is configured to emit blue light to the quantum dot color conversion structure 5 to excite the quantum dot color conversion structure 5 to emit red light, green light, and the like, thereby implementing full-color display.
Specifically, the array substrate 3 includes a thin film transistor array for driving the light emitting device 6 to emit light.
Specifically, the material of the quantum dot color conversion layer 8 is quantum dots; the quantum dot color conversion layer 8 is positioned in the plurality of reflective resonant cavities 9 corresponding to the red color resistance units 10 and the green color resistance units 11; specifically, the quantum dot color conversion layer 8 includes a red quantum dot color conversion unit 13 located in the plurality of reflective resonators 9 corresponding to the red color resistance unit 10, and a green quantum dot color conversion unit 14 located in the plurality of reflective resonators 9 corresponding to the green color resistance unit 11. The material of the red quantum dot color conversion unit 13 includes red quantum dots, and the material of the green quantum dot color conversion unit 14 includes green quantum dots.
The red quantum dot color conversion unit 13 emits red light under the excitation of blue light, and the excited red light penetrates through the corresponding red color resistance unit 10 and the transparent substrate 2; the green quantum dot color conversion unit 14 emits green light under excitation of blue light, and the excited green light transmits through the corresponding green color resist unit 11 and the transparent substrate 2. The quantum dot color conversion layer 8 is not required to be arranged in the plurality of reflective resonators 9 corresponding to the blue color resistance unit 12, and blue light emitted by the light emitting device 6 sequentially passes through the plurality of reflective resonators 9 corresponding to the blue color resistance unit 12, the blue color resistance unit 12 and the transparent substrate 2. The emitted red light, green light and blue light are used for single-color display or mixed into white light display to realize full-color display.
Since the light conversion efficiency of the quantum dots cannot reach 100%, and some of the blue light passing through the quantum dot color conversion layer 8 is not converted into red light or green light, it is necessary to provide the color filter 4 on the side of the quantum dot color conversion layer 8 away from the light emitting device 6, and the filtering effect of the red color resistance unit 10 and the green color resistance unit 11 on the color filter 4 can filter out the redundant blue light and other stray light, so as to improve the display contrast.
Specifically, the material of the resonant cavity defining layer 7 includes a photoresist material; the reflective resonant cavity 9 may be formed by a nanoimprint technique; length of the reflective resonant cavity 9
And L is less than 1 micron; where n is an integer greater than or equal to 1, and λ is the emission wavelength of the quantum dot color conversion layer 8 located in the reflective cavity 9. In one embodiment, the light emitting wavelength of the red quantum dot color conversion unit 13 in the plurality of reflective resonators 9 corresponding to the red color resistance unit 10 is 620 nm, and the cavity length L1 of each reflective resonator 9 corresponding to the red color resistance unit 10 can be set to be an integer multiple of 310 nm and smaller than 1 μm, such as 310 nm, 620 nm or 930 nm; the light emitting wavelength of the green quantum dot color conversion unit 14 in the plurality of reflective resonators 9 corresponding to the green color resistance unit 11 is 530 nm, and the cavity length L2 of each reflective resonator 9 corresponding to the green color resistance unit 11 may be set to be an integral multiple of 265 nm and less than 1 μm, for example, 265 nm, 530 nm or 795 nm.
Specifically, the height range of the reflective resonant cavity 9 includes 50 nm to 200 nm.
The reflective resonant cavity 9 has a selective enhancement effect on the luminescence of the quantum dots in the quantum dot color conversion layer 8, and can narrow the emission spectrum of the quantum dots, thereby improving the color gamut of the quantum dot display. The optical enhancement mechanism of the reflective resonant cavity 9 for the quantum dots will be described below by taking the red quantum dot color conversion unit 13 as an example, as shown in fig. 2, the red light emitted by the excited red quantum dots in the red quantum dot color conversion unit 13 is totally reflected at the interface between the red quantum dots and the reflective resonant cavity 9, and this total reflection enhances the light emission of the quantum dots, narrows the emission spectrum of the quantum dots, and thus improves the color gamut displayed by the quantum dots.
In one embodiment, as shown in fig. 1, the color filter 4 further includes a light shielding layer 15, such as a black matrix; the light shielding layer 15 is provided with a plurality of pixel openings 16 which are arranged in one-to-one correspondence with the plurality of color resistance units; each color-resisting unit is positioned in the corresponding pixel opening 16; the shading layer 15 is arranged corresponding to the plurality of reflective resonant cavities 9; the quantum dot color conversion structure 5 further includes a retaining wall structure 17 located in the plurality of reflective resonators 9 corresponding to the light shielding layer 15. The retaining wall structure 17 is used for spacing two adjacent quantum dot color conversion units to avoid color mixing, and the ink jet printing technology can be adopted when the quantum dot color conversion units are formed, and the retaining wall structure 17 can avoid quantum dot ink overflow. Specifically, the retaining wall structure 17 encloses a plurality of openings 18 corresponding to the plurality of color resistance units one to one, the red quantum dot color conversion unit 13 is located in the opening 18 corresponding to the red color resistance unit 10, and the green quantum dot color conversion unit 14 is located in the opening 18 corresponding to the green color resistance unit 11.
In another embodiment, as shown in fig. 3, the retaining wall structure 17 extends away from the color filter 4, that is, the retaining wall structure 17 is also located on the surface of the cavity defining layer 7, or the height of the retaining wall structure 17 is higher than the height of the reflective cavity 9; correspondingly, the quantum dot color conversion layer 8 is also positioned on the surface of the resonant cavity defining layer 7, and the height of the quantum dot color conversion layer 8 is less than or equal to the height of the retaining wall structure 17. Specifically, the quantum dot color conversion layer 8 is formed using an inkjet printing technique.
In the embodiment, the reflective resonant cavities 9 which are periodically distributed are prepared on the traditional color filter 4 by a nano-imprinting technology, and the patterned quantum dot color conversion layer 8 is prepared by an ink-jet printing technology, so that the manufacturing process is simple, and mass production is easy to realize; moreover, the half-wave width of the emission spectrum of the quantum dot color conversion layer 8 is narrow, which is beneficial to improving the display color gamut of the display panel 1, and the reflective resonant cavity 9 has a selective enhancement effect on the emission of the quantum dots in the quantum dot color conversion layer 8, so that the emission spectrum of the quantum dots can be narrowed, which is beneficial to further improving the display color gamut of the display panel 1, and is beneficial to further improving the display quality of the display panel 1.
As shown in fig. 4, the embodiment of the present application further provides a manufacturing method of the display panel 1, which includes steps S401 to S403.
Step S401: a transparent substrate is provided, and a color filter is formed on the transparent substrate.
Specifically, the transparent substrate may be a rigid glass substrate or a flexible substrate; the color filter is a conventional filter; as shown in fig. 5a, the color filter 4 is formed on the transparent substrate 2, and the color filter 4 includes a plurality of color resistance units distributed in an array; each color resistance unit corresponds to a plurality of reflective resonant cavities 9; the color resistance units include a red color resistance unit 10, a green color resistance unit 11, and a blue color resistance unit 12, wherein the blue color resistance unit 12 may also be replaced with a transparent color resistance unit.
Step S402: forming a resonant cavity defining layer on one side of the color filter, which is far away from the transparent substrate; and a plurality of reflection type resonant cavities which are periodically distributed are formed on the resonant cavity defining layer so as to expose the corresponding color filters.
Specifically, as shown in fig. 5b to 5d, step S402 includes the following steps:
as shown in fig. 5b, a photoresist layer 19 is covered on the side of the color filter 4 away from the transparent substrate 2;
as shown in fig. 5c and 5d, a plurality of reflective resonators 9 are formed on the photoresist layer 19 in a periodic distribution by using a nanoimprint technique to form the resonator defining layer 7.
Specifically, as shown in fig. 5c, a PDMS (polydimethylsiloxane) mold 20 having a periodic protrusion structure is used to stamp the photoresist layer 19, and a periodic groove structure (reflective resonant cavity 9) is stamped on the photoresist layer 19; as shown in fig. 5d, after the PDMS mold 20 is removed, the cavity defining layer 7 including the plurality of reflective cavities 9 distributed periodically is obtained.
In particular, the cavity length of the reflective resonant cavity 9
And L is less than 1 micron; wherein n is an integer greater than or equal to 1, and λ is the light emission wavelength of the quantum dot color conversion layer 8 located in the reflective resonant cavity 9. For example, when the emission wavelength of the red quantum dot is 620 nm, the cavity length L1 of the reflective resonant cavity 9 filled with the red quantum dot may be set to be an integral multiple of 310 nm and less than 1 μm(ii) a When the light emitting wavelength of the green quantum dot is 530 nm, the cavity length L2 of the reflective resonant cavity 9 filled with the green quantum dot may be set to be an integral multiple of 265 nm and smaller than 1 μm.
Specifically, the height range of the reflective resonant cavity 9 includes 50 nm to 200 nm.
Step S403: and forming a quantum dot color conversion layer in the at least partially reflective resonant cavity, contacting the quantum dot color conversion layer with the exposed color filter, and forming a quantum dot color conversion structure by the quantum dot color conversion layer and the resonant cavity defining layer.
Specifically, step S403 includes the following steps:
a red quantum dot color conversion unit is formed in the plurality of reflective resonators corresponding to the red color resistance unit, and a green quantum dot color conversion unit is formed in the plurality of reflective resonators corresponding to the green color resistance unit to form a quantum dot color conversion layer 8.
Specifically, the material of the red quantum dot color conversion unit comprises red quantum dots, and the material of the green quantum dot color conversion unit comprises green quantum dots.
In one embodiment, as shown in fig. 5e, the color filter 4 further includes a light-shielding layer 15; the light shielding layer 15 is provided with a plurality of pixel openings 16 which are arranged in one-to-one correspondence with the plurality of color resistance units; each color-resisting unit is positioned in the corresponding pixel opening 16; the light shielding layer 15 is disposed corresponding to the plurality of reflective resonators 9.
Forming a red quantum dot color conversion unit and a green quantum dot color conversion unit, comprising the steps of:
as shown in fig. 5e, a retaining wall structure 17 is formed in the reflective resonators 9 corresponding to the light-shielding layer 15, and the retaining wall structure 17 extends to a side of the resonator defining layer 7 away from the color filter 4; wherein, the retaining wall structure 17 encloses a plurality of openings 18 corresponding to the plurality of color resistance units one by one;
as shown in fig. 5f, the red quantum dot color conversion unit 13 is formed in the opening 18 corresponding to the red color resistance unit 10 and the green quantum dot color conversion unit 14 is formed in the opening 18 corresponding to the green color resistance unit 11 by using the inkjet printing technique.
Specifically, the quantum dot color conversion layer 8 is further located on the surface of the resonant cavity defining layer 7, and the height of the quantum dot color conversion layer 8 is less than or equal to the height of the retaining wall structure 17.
Specifically, the reflective resonant cavity 9 has a selective enhancement effect on the light emission of the quantum dots in the quantum dot color conversion layer 8, and can narrow the emission spectrum of the quantum dots, thereby improving the color gamut of the quantum dot display. The optical enhancement mechanism of the reflective resonant cavity 9 for quantum dots will be described below by taking the red quantum dot color conversion unit 13 as an example, as shown in fig. 2, red light emitted by a red quantum dot in the red quantum dot color conversion unit 13 is totally reflected at an interface between the red quantum dot and the reflective resonant cavity 9, and the total reflection enhances the light emission of the quantum dot, narrows the emission spectrum of the quantum dot, and thus improves the color gamut displayed by the quantum dot.
Specifically, as shown in fig. 5g, the manufacturing method of the display panel 1 further includes the following steps:
providing an array substrate 3;
forming a plurality of light emitting devices 6 distributed in an array on the array substrate 3;
the array substrate 3 on which the light emitting device 6 is formed is disposed opposite to the transparent substrate 2 on which the color filter 4 and the quantum dot color conversion structure 5 are formed such that the light emitting device 6 is disposed close to the quantum dot color conversion structure 5.
Specifically, the light emitting device 6 includes any one of a blue light LED, a blue light OLED, a Mini LED, and a Micro LED, and is configured to emit blue light to the quantum dot color conversion structure 5 to excite the quantum dot color conversion structure 5 to emit red light, green light, and the like, thereby implementing full-color display.
Specifically, the array substrate 3 includes a thin film transistor array for driving the light emitting device 6 to emit light.
Specifically, the red quantum dot color conversion unit 13 emits red light under the excitation of blue light, and the excited red light penetrates through the corresponding red color resistance unit 10 and the transparent substrate 2; the green quantum dot color conversion unit 14 emits green light under excitation of blue light, and the excited green light transmits through the corresponding green color resist unit 11 and the transparent substrate 2. The quantum dot color conversion layer 8 is not required to be arranged in the plurality of reflective resonant cavities 9 corresponding to the blue color resistance units 12, and the blue light emitted by the light emitting device 6 sequentially penetrates through the plurality of reflective resonant cavities 9 corresponding to the blue color resistance units 12, the blue color resistance units 12 and the transparent substrate 2. The emitted red light, green light and blue light are used for single-color display or mixed into white light display to realize full-color display.
In the embodiment, the reflective resonant cavities 9 which are periodically distributed are prepared on the traditional color filter 4 by a nano-imprinting technology, and the patterned quantum dot color conversion layer 8 is prepared by an ink-jet printing technology, so that the manufacturing process is simple, and mass production is easy to realize; moreover, the half-wave width of the emission spectrum of the quantum dot color conversion layer 8 is narrow, which is beneficial to improving the display color gamut of the display panel 1, and the reflective resonant cavity 9 has a selective enhancement effect on the emission of the quantum dots in the quantum dot color conversion layer 8, so that the emission spectrum of the quantum dots can be narrowed, which is beneficial to further improving the display color gamut of the display panel 1, and is beneficial to further improving the display quality of the display panel 1.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The display panel and the manufacturing method thereof provided by the embodiment of the present application are described in detail above, and a specific example is applied in the description to explain the principle and the implementation manner of the present application, and the description of the embodiment is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (9)
1. The display panel is characterized by comprising a transparent substrate, and a color filter and a quantum dot color conversion structure which are sequentially arranged on the transparent substrate;
the quantum dot color conversion structure comprises a resonant cavity defining layer and a quantum dot color conversion layer which are sequentially arranged on one side of the color filter, which is far away from the transparent substrate; a plurality of reflection type resonant cavities which are periodically distributed are formed on the resonant cavity defining layer, and the quantum dot color conversion layer is at least arranged in part of the reflection type resonant cavities and is in contact with the color filter;
the color filter comprises a plurality of color resistance units distributed in an array; each color resistance unit corresponds to a plurality of reflective resonant cavities; the length of the reflective resonant cavity
And L is less than 1 micron; wherein n is an integer greater than or equal to 1, and λ is the emission wavelength of the quantum dot color conversion layer located in the reflective resonant cavity.
2. The display panel of claim 1, wherein the reflective resonant cavity has a height ranging from 50 nanometers to 200 nanometers.
3. The display panel of claim 1, wherein the plurality of color resistance units include a red color resistance unit, a green color resistance unit, and a blue color resistance unit; the quantum dot color conversion layer is positioned in the plurality of reflective resonant cavities corresponding to the red color resistance units and the green color resistance units.
4. The display panel of claim 3, wherein the quantum dot color conversion layer comprises red quantum dot color conversion units located in a plurality of the reflective resonant cavities corresponding to the red color resistance units, and green quantum dot color conversion units located in a plurality of the reflective resonant cavities corresponding to the green color resistance units.
5. The display panel according to claim 3, wherein the color filter further comprises a light shielding layer; the shading layer is provided with a plurality of pixel openings which are arranged in one-to-one correspondence to the plurality of color resistance units; each color resistance unit is positioned in the corresponding pixel opening;
the shading layer is arranged corresponding to the plurality of reflective resonant cavities; the quantum dot color conversion structure further comprises a plurality of retaining wall structures located in the reflective resonant cavity and corresponding to the light shielding layers.
6. A manufacturing method of a display panel is characterized by comprising the following steps:
providing a transparent substrate, and forming a color filter on the transparent substrate; the color filter comprises a plurality of color resistance units distributed in an array;
forming a resonant cavity defining layer on one side of the color filter far away from the transparent substrate; a plurality of reflective resonant cavities which are periodically distributed are formed on the resonant cavity defining layer so as to expose the corresponding color filters, and each color resistance unit is arranged corresponding to the plurality of reflective resonant cavities;
forming a quantum dot color conversion layer in at least part of the reflective resonant cavity, and enabling the quantum dot color conversion layer to be in contact with the exposed color filter, wherein the quantum dot color conversion layer and the resonant cavity defining layer form a quantum dot color conversion structure; wherein the cavity length of the reflective resonant cavity
And L is less than 1 micron; wherein n is an integer greater than or equal to 1, and λ is the light emission wavelength of the quantum dot color conversion layer in the reflective resonant cavity.
7. The method for manufacturing a display panel according to claim 6, wherein the forming of the resonant cavity defining layer on the side of the color filter away from the transparent substrate comprises the steps of:
covering a light resistance layer on one side of the color filter far away from the transparent substrate;
and forming a plurality of reflection type resonant cavities which are periodically distributed on the photoresist layer by adopting a nano-imprinting technology so as to form a resonant cavity definition layer.
8. The method for manufacturing a display panel according to claim 6, wherein the plurality of color resistance units include a red color resistance unit, a green color resistance unit, and a blue color resistance unit;
the forming of the quantum dot color conversion layer in at least part of the reflective resonant cavity comprises the following steps:
and forming a red quantum dot color conversion unit in the plurality of reflective resonant cavities corresponding to the red color resistance units, and forming a green quantum dot color conversion unit in the plurality of reflective resonant cavities corresponding to the green color resistance units to form a quantum dot color conversion layer.
9. The method according to claim 8, wherein the color filter further comprises a light-shielding layer; the shading layer is provided with a plurality of pixel openings which are arranged in one-to-one correspondence to the plurality of color resistance units; each color resistance unit is positioned in the corresponding pixel opening; the shading layer is arranged corresponding to the plurality of reflective resonant cavities;
the forming a red quantum dot color conversion unit in a plurality of the reflective resonant cavities corresponding to the red color resistance unit and a green quantum dot color conversion unit in a plurality of the reflective resonant cavities corresponding to the green color resistance unit includes the following steps:
forming a retaining wall structure in the plurality of reflective resonant cavities corresponding to the light shielding layer, wherein the retaining wall structure extends to one side of the resonant cavity defining layer away from the color filter; the retaining wall structure is surrounded into a plurality of openings which are in one-to-one correspondence with the plurality of color resistance units;
and forming a red quantum dot color conversion unit in the opening corresponding to the red color resistance unit and forming a green quantum dot color conversion unit in the opening corresponding to the green color resistance unit by adopting an ink-jet printing technology.
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| CN112652649B (en) * | 2020-12-21 | 2023-06-16 | 深圳扑浪量子半导体有限公司 | Quantum dot display device and preparation method and application thereof |
| CN113363276B (en) * | 2021-05-28 | 2022-11-22 | 业成科技（成都）有限公司 | Display panel and manufacturing method thereof |
| CN114141809B (en) * | 2021-11-30 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
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