CN112002706B - Display panel and manufacturing method thereof - Google Patents
Display panel and manufacturing method thereof Download PDFInfo
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- CN112002706B CN112002706B CN202010796247.4A CN202010796247A CN112002706B CN 112002706 B CN112002706 B CN 112002706B CN 202010796247 A CN202010796247 A CN 202010796247A CN 112002706 B CN112002706 B CN 112002706B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 177
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 86
- 239000000126 substance Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229910052738 indium Inorganic materials 0.000 claims abstract description 26
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 16
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 31
- 230000003247 decreasing effect Effects 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 52
- 150000004706 metal oxides Chemical class 0.000 abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 239000010409 thin film Substances 0.000 abstract description 16
- 239000010408 film Substances 0.000 abstract description 13
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 description 24
- 230000007797 corrosion Effects 0.000 description 24
- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 9
- 238000006748 scratching Methods 0.000 description 8
- 230000002393 scratching effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- -1 nitrogen oxide compound Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/263—Amorphous materials
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The application discloses a display panel and a manufacturing method thereof. The display panel comprises a first substrate, an active layer positioned on the first substrate, a gate insulating layer positioned on the active layer, and a source drain layer positioned on the gate insulating layer and electrically connected with the active layer; the material of the active layer comprises a first substance and a second substance, wherein the first substance comprises nitrogen element, and the second substance comprises indium element and tin element. According to the method, the nitrogen element is added into the metal oxide containing the indium element and the tin element to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
Description
Technical Field
The application relates to the field of display, in particular to the field of display technology, and specifically relates to a display panel and a manufacturing method thereof.
Background
With the improvement of living standard, the application of display screens in the life of people is more extensive.
In the prior art, in an active layer semiconductor of a display panel, due to the fact that the carrier mobility of an active semiconductor layer made of a pure metal oxide material is low, and the technical problems that the light, heat and electric stability of the active semiconductor layer is poor exist, the working performance of the whole thin film transistor display device is reduced.
Therefore, a display panel and a method for fabricating the same are needed to solve the above-mentioned problems.
Disclosure of Invention
The application provides a display panel and a manufacturing method thereof, and aims to solve the technical problems that in the prior art, in an active layer semiconductor of the display panel, the carrier mobility of an active semiconductor layer made of a pure metal oxide material is low, the light, heat and electric stability of the active semiconductor layer is poor, and the working performance of the whole thin film transistor display device is reduced.
In order to solve the above problems, the technical solution provided by the present application is as follows:
a display panel comprises a first substrate, an active layer positioned on the first substrate, a gate insulating layer positioned on the active layer, a gate layer positioned on the gate insulating layer, an insulating layer positioned on the gate layer, and a source drain layer positioned on the insulating layer and electrically connected with the active layer through a plurality of first through holes;
the material of the active layer comprises a first substance and a second substance, wherein the first substance comprises nitrogen element, and the second substance comprises indium element and tin element.
In the display panel of the present application, the nitrogen element of the first substance is derived from a combination of one or more of: nitrogen, nitrogen oxides;
the second substance is one or the combination of indium gallium tin oxide, indium tin zinc oxide and indium gallium zinc tin oxide.
In the display panel of the present application, the concentration of the first substance is gradually decreased in a direction from the first substrate to the gate insulating layer.
In the display panel of the present application, the concentration of the first substance gradually increases in a direction from the first substrate to the gate insulating layer.
In the display panel of the present application, the concentration of the first substance is first decreased and then increased in a direction from the first substrate to the gate insulating layer.
In the display panel, the contact surface of the source drain layer and the active layer corresponds to a first area of the active layer, and the concentration of the first substance in the first area is greater than that of the first substance at the periphery of the first area in the active layer.
In the display panel of the present application, the concentration of the first substance gradually decreases in a direction from the periphery of the active layer to the center of the active layer.
The application also provides a manufacturing method of the display panel, which comprises the following steps:
forming an active layer on a first substrate;
forming a gate insulating layer on the active layer;
sequentially forming a gate electrode layer and an insulating layer on the gate insulating layer;
forming a first via hole on the insulating layer, wherein the first via hole penetrates through the insulating layer and the gate insulating layer to expose the active layer;
forming a source drain layer on the insulating layer, wherein the source drain layer is electrically connected with the active layer through the first through hole;
the material of the active layer comprises a first substance and a second substance, wherein the first substance comprises nitrogen element, and the second substance comprises indium element and tin element.
In the manufacturing method of the display panel of the present application, a first via hole is formed on the insulating layer, and after the first via hole exposes the active layer, the method further includes:
and forming the first substance by plasma gas treatment and introducing one or more combinations of nitrogen and/or oxynitride, wherein the first substance is positioned in a corresponding area of the contact surface of the source drain layer and the active layer.
In the method for manufacturing a display panel according to the present application, after the forming of the gate electrode layer on the gate insulating layer and before the forming of the insulating layer, the method further includes:
and carrying out plasma gas treatment on the second area of the active layer, and introducing one or more of the following combinations: nitrogen, a nitrogen oxide, forming the first species;
the second region is a non-contact region of the active layer and the gate insulating layer.
Has the advantages that: according to the method, the nitrogen element is added into the metal oxide containing the indium element and the tin element to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a schematic view of a first structure of a display panel according to the present application;
FIG. 2 is a second schematic view of a display panel according to the present invention;
fig. 3 is a flowchart illustrating steps of a method for manufacturing a display panel according to the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. To simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
In the prior art, in an active layer semiconductor of a display panel, due to the fact that the carrier mobility of an active semiconductor layer made of a pure metal oxide material is low, and the technical problems that the light, heat and electric stability of the active semiconductor layer is poor exist, the working performance of the whole thin film transistor display device is reduced.
Referring to fig. 1 and fig. 2, the present application provides a display panel 100, including a first substrate 200, an active layer 300 located on the first substrate 200, a gate insulating layer 400 located on the active layer 300, a gate layer 500 located on the gate insulating layer 400, an insulating layer 600 located on the gate layer 500, and a source drain layer 700 located on the insulating layer 600 and electrically connected to the active layer 300 through a plurality of first vias 610;
the material of the active layer 300 includes a first substance including nitrogen and a second substance including indium and tin.
According to the method, the nitrogen element is added into the metal oxide containing the indium and tin elements to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
The technical solution of the present application will now be described with reference to specific embodiments.
Referring to fig. 1 and 2, the display panel 100 includes a first substrate 200, an active layer 300 on the first substrate 200, a gate insulating layer 400 on the active layer 300, a gate layer 500 on the gate insulating layer 400, an insulating layer 600 on the gate layer 500, and a source/drain layer 700 on the insulating layer 600 and electrically connected to the active layer 300 through a plurality of first vias 610. The material of the active layer 300 includes a first substance including nitrogen and a second substance including indium and tin.
In this embodiment, the nitrogen element of the first material is derived from a combination of one or more of the following: nitrogen, nitrogen oxide. The nitrogen oxide compound may be one or a combination of more than one, such as nitric oxide, nitrogen dioxide, nitrous oxide, and the like, which are not listed herein, and are not repeated below. The first material refers to nitrogen doping, and the nitrogen doping may be substituted with oxygen atoms in the active layer 300 or exist in the form of interstitial atoms.
In this embodiment, the second material is one or a combination of indium gallium tin oxide, indium tin zinc oxide, and indium gallium zinc tin oxide. The second material is a main body of the active layer 300, exists in a metal oxide form, and forms the active layer 300 with a thickness of 100 to 1000 angstroms.
In this embodiment, the followingThe active layer 300 of the second material is a high mobility target material with a mobility of up to 15cm 2 /(V · s), even 30cm 2 If V · s or more, the nitrogen element doping has an influence on the carrier mobility of the active layer 300, but the higher the carrier mobility of the active layer 300 is, the lower the electrical stability thereof is, and the electrical stability of the active layer 300 can be improved by the nitrogen element doping.
In this embodiment, the concentration of the first material is referred to as the ratio of the number of atomic elements, and the ratio of the number of atomic nitrogen elements of the first material to the total number of atomic nitrogen atoms of the active layer 300 is less than 1%.
In this embodiment, the first material is uniformly distributed in the active layer 300. Corresponding to the fabrication of the active layer 300, one or more of the following combinations are always used: nitrogen gas and oxynitride, thereby uniformly distributing the first substance in the active layer 300, and thus, the electrical stability of the entire active layer 300 can be more improved. Meanwhile, due to the integral doping of nitrogen, the corrosion resistance and the wear resistance of the integral active layer 300 are improved.
In this embodiment, the concentration of the first substance gradually decreases in a direction from the first substrate 200 to the gate insulating layer 400. I.e., deposition prior to fabrication of the active layer 300, one or more of the following combinations are introduced: nitrogen and oxynitride, wherein the nitrogen doping is mainly concentrated near the first substrate 200, and particularly when the nitrogen doping is near the first substrate 200 and occupies 5% to 30% of the film thickness of the active layer 300, the active layer 300 has the highest material performance of corrosion resistance and scratch resistance in the direction of the first substrate 200, and can better resist corrosion or physical scratching in the direction of the first substrate 200.
In this embodiment, the concentration of the first substance gradually increases in a direction from the first substrate 200 to the gate insulating layer 400. I.e., deposition at a later stage in the fabrication of the active layer 300, one or more of the following combinations are introduced: nitrogen and oxynitride, which are mainly concentrated near the gate insulating layer 400 corresponding to the nitrogen doping, and particularly, when the nitrogen and oxynitride are near the gate insulating layer 400 and occupy 5% -30% of the thickness of the active layer 300, the active layer 300 has the highest material performance of corrosion resistance and scratch resistance in the direction of the gate insulating layer 400, and can better resist corrosion or physical scratching from the direction of the gate insulating layer 400.
In this embodiment, the concentration of the first substance is first decreased and then increased in a direction from the first substrate 200 to the gate insulating layer 400. I.e., deposition before and after the active layer 300 is fabricated, one or more of the following combinations are introduced: nitrogen and oxynitride, which are deposited during the middle period of the active layer 300 fabrication, are stopped to be ventilated, and the nitrogen doping is mainly concentrated near the first substrate 200 and the gate insulating layer 400, especially when the nitrogen doping is near the first substrate 200 and occupies 5% -30% of the film thickness of the active layer 300, the active layer 300 has the highest material performance of corrosion resistance and scratch resistance in the direction of the first substrate 200 and the direction of the gate insulating layer 400, and can better resist corrosion or physical scratching in the direction of the first substrate 200 and the direction of the gate insulating layer 400.
In this embodiment, the contact surface between the source/drain layer 700 and the active layer 300 corresponds to the first region 310 of the active layer 300, and the concentration of the first substance in the first region 310 is greater than the concentration of the first substance in the active layer 300 at the periphery of the first region 310, which is specifically referred to in fig. 1 and fig. 2. The first region 310 corresponds to a region where the first via hole 610 is cut on the active layer 300, and corresponds to a combination of one or more of the following processes performed when plasma treatment is performed after the first via hole 610 is formed in manufacturing the display panel 100: nitrogen and oxynitride, which have good corrosion resistance or physical scratch and chop resistance to the region where the active layer 300 contacts the source drain layer 700. The nitrogen doping may be performed only in the first region 310, or may be performed a second time after the nitrogen doping of the above embodiment is formed.
In the present embodiment, the concentration of the first substance gradually decreases in a direction from the periphery of the active layer 300 to the center of the active layer 300. After the first region 310 corresponding to the first via hole 610 is doped with nitrogen, nitrogen is diffused from the first region 310 by an annealing hydrogenation process, so that more regions of the active layer 300 are doped with nitrogen, and better electrical stability and corrosion resistance and scratch resistance of the edge of the first region 310 are achieved.
In this embodiment, the first via 610 forms an opening on the active layer 300, that is, the active layer 300 includes a portion of the first via 610, but the first via 610 does not penetrate through the active layer 300, as shown in fig. 2. The structure increases the contact area of the active layer 300 when the first region 310 is doped with nitrogen, facilitates nitrogen doping, is beneficial to diffusing nitrogen elements in the first region 310, and is beneficial to stably contacting the source drain layer 700 with the active layer 300, and the source drain layer 700 is nailed on the active layer 300 like a nail, so that the electrical connection between the active layer 300 and the source drain is stabilized.
In this embodiment, the gate insulating layer 400 is located in the active layer 300 at the orthographic projection of the active layer 300, and the first substance is located in the second region 320 of the active layer 300. The second region 320 is a non-contact region between the active layer 300 and the gate insulating layer 400, and the second region 320 corresponds to a conductive region of the active layer 300, specifically referring to fig. 1 and fig. 2, in the manufacturing process, the gate insulating layer 400 may be used as a mask, and when the second region 320 is conducted, one or more of the following combinations are introduced: the nitrogen gas or the oxynitride may be used for doping the second region during the formation of the conductor, or may be used for doping the second region alone. The active layer 300 has the highest material properties for overall corrosion resistance and scratch resistance with the second region 320, and can better resist corrosion or physical scratching from the second region 320.
In this embodiment, the display panel 100 further includes a light-shielding layer 210 and a buffer layer 220 between the first substrate 200 and the active layer 300, and the sourceThe drain electrode layer 700 is electrically connected to the light shielding layer 210 through a plurality of second via holes 620, that is, the second via holes 620 penetrate through the insulating layer 600 and the buffer layer 220, so that the light shielding layer 210 is exposed, and the second via holes 620 connecting the light shielding layer 210 and the drain electrode layer 700 are located outside the active layer 300 and do not penetrate through the active layer 300, which is specifically referred to fig. 1 and 2. The material of the light shielding layer 210 includes metal, and may be one or a combination of Mo, Cr, Al, Cu, and Ti. The thickness of the light-shielding layer 210 is 500 to 2000 angstroms. The material of the buffer layer 220 includes SiO x Or/and SiN x . The thickness of the buffer layer 220 is 1000 to 5000 angstroms. The light shielding layer 210 is electrically connected to the source drain layer 700, so that the potential of the light shielding layer 210 is balanced, which is beneficial to the electrical balance and the electrical stability of the display panel 100.
In this embodiment, the material of the gate insulating layer 400 includes SiO x Or/and SiN x . The thickness of the gate insulating layer 400 is 1000 to 3000 angstroms.
In this embodiment, the material of the gate layer 500 is one or a combination of Mo, Al, Cu, and Ti. The gate layer 500 has a thickness of 2000 to 8000 angstroms.
In this embodiment, the material of the insulating layer 600 includes SiO x Or/and SiN x 。
In this embodiment, the source/drain layer 700 is made of one or a combination of Mo, Al, Cu, and Ti.
In this embodiment, the display panel 100 further includes a passivation layer 800 on the source/drain layer 700, which is specifically referred to in fig. 1 and fig. 2. The material of the passivation layer 800 includes SiO x Or/and SiN x . The thickness of the passivation layer 800 is 1000 to 5000 angstroms.
In this embodiment, the display panel 100 further includes a flat layer 810 on the passivation layer 800, and an electrode layer on the flat layer 810, specifically refer to fig. 1 and fig. 2. The electrode wires 900 of the electrode layer are electrically connected to the source drain layer 700 through third via holes 811.
According to the method, the nitrogen element is added into the metal oxide containing the indium element and the tin element to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
Referring to fig. 1 to fig. 3, the present application further provides a manufacturing method of a display panel 100, including:
s100, forming an active layer 300 on a first substrate 200;
s200, forming a gate insulating layer 400 on the active layer 300;
s300, sequentially forming a gate electrode layer 500 and an insulating layer 600 on the gate insulating layer 400;
s400, forming a first via hole 610 on the insulating layer 600, wherein the first via hole 610 penetrates through the insulating layer 600 and the gate insulating layer 600 to expose the active layer 300;
s500, forming a source drain layer 700 on the insulating layer 600, wherein the source drain layer 700 is electrically connected to the active layer 300 through the first via hole 610;
the material of the active layer 300 includes a first substance including nitrogen and a second substance including indium and tin.
According to the method, the nitrogen element is added into the metal oxide containing the indium and tin elements to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
The technical solution of the present application will now be described with reference to specific embodiments.
Referring to fig. 1 to 3, the method for manufacturing the display panel 100 includes:
s100, an active layer 300 is formed on the first substrate 200.
In this embodiment, step S100 includes:
s110, a light-shielding layer 210 is formed on the first substrate 200.
And S120, forming a buffer layer 220 on the light-shielding layer 210.
In this embodiment, the display panel 100 further includes a light shielding layer 210 and a buffer layer 220 located between the first substrate 200 and the active layer 300, the source drain layer 700 and the light shielding layer 210 are electrically connected through a plurality of second via holes 620, that is, the second via holes 620 penetrate through the insulating layer 600 and the buffer layer 220, so that the light shielding layer 210 is exposed, and the second via holes 620 connecting the light shielding layer 210 and the source drain layer 700 are located outside the active layer 300 and do not penetrate through the active layer 300, which is specifically referred to fig. 1 and fig. 2. The material of the light shielding layer 210 includes metal, and may be one or a combination of Mo, Cr, Al, Cu, and Ti. The thickness of the light-shielding layer 210 is 500 to 2000 angstroms. The material of the buffer layer 220 includes SiO x Or/and SiN x . The buffer layer 220 has a thickness of 1000 to 5000 angstroms. The light shielding layer 210 is electrically connected to the source drain layer 700, so that the potential of the light shielding layer 210 is balanced, which is beneficial to the electrical balance and the electrical stability of the display panel 100.
S130, forming an active layer 300 on the buffer layer 220.
In this embodiment, the nitrogen element of the first material is derived from a combination of one or more of the following: nitrogen, nitrogen oxide. The nitrogen oxide may be one or a combination of more than one, such as nitric oxide, nitrogen dioxide, nitrous oxide, and the like, which are not listed individually herein and are not repeated below. The first material refers to nitrogen element doping, and the nitrogen element doping can replace oxygen atoms in the active layer 300 or exist in the form of interstitial atoms.
In this embodiment, the second material is one or a combination of indium gallium tin oxide, indium tin zinc oxide, and indium gallium zinc tin oxide. The second material is a main body of the active layer 300, exists in a metal oxide form, and forms the active layer 300 with a thickness of 100 to 1000 angstroms.
In this embodiment, the active layer 300 including the second material is a high mobility target material, and the mobility can reach 15cm 2 V.s, even 30cm 2 /(. V.s) or more, the nitrogen element doping has an influence on the carrier mobility of the active layer 300, butThe higher the carrier mobility of the active layer 300 is, the poorer the electrical stability thereof is, and the electrical stability of the active layer 300 can be improved by doping nitrogen element.
In this embodiment, the concentration of the first material is referred to as the ratio of the number of atomic elements, and the ratio of the number of atomic elements of nitrogen of the first material to the total number of atomic elements of the active layer 300 is less than 1%.
In this embodiment, step S130 includes:
s131, depositing a thin film on the buffer layer 220.
In this embodiment, the material of the film includes the second substance. The second substance is one or the combination of more of indium gallium tin oxide, indium tin zinc oxide and indium gallium zinc tin oxide. The second material is a main body of the active layer 300, exists in a metal oxide form, and forms the active layer 300 to a thickness of 100 to 1000 angstroms.
In this embodiment, step S131 includes:
s1311, depositing a thin film on the buffer layer 220 while passing through a combination of one or more of the following: nitrogen, oxynitride, so that the first material is uniformly distributed in the active layer 300.
In this embodiment, the first material is uniformly distributed in the active layer 300. Corresponding to the fabrication of the active layer 300, one or more of the following combinations are always used: nitrogen gas and oxynitride, thereby uniformly distributing the first substance in the active layer 300, and thus, the electrical stability of the entire active layer 300 can be more improved. Meanwhile, due to the integral doping of nitrogen, the corrosion resistance and the wear resistance of the integral active layer 300 are improved.
In this embodiment, step S131 includes:
s1311, depositing a thin film on the buffer layer 220, wherein the depositing process includes flowing one or more of the following combinations before depositing: nitrogen, and an oxynitride compound so that the concentration of the first substance is gradually decreased in a direction from the first substrate 200 to the gate insulating layer 400.
In this embodiment, the concentration of the first substance gradually decreases in a direction from the first substrate 200 to the gate insulating layer 400. I.e., deposition prior to fabrication of the active layer 300, one or more of the following combinations are introduced: nitrogen and oxynitride, wherein the nitrogen doping is mainly concentrated near the first substrate 200, and particularly when the nitrogen doping is near the first substrate 200 and occupies 5% to 30% of the film thickness of the active layer 300, the active layer 300 has the highest material performance of corrosion resistance and scratch resistance in the direction of the first substrate 200, and can better resist corrosion or physical scratching in the direction of the first substrate 200.
In this embodiment, step S131 includes:
s1311, depositing a thin film on the buffer layer 220, wherein the depositing process includes, at a later stage of deposition, introducing a combination of one or more of the following: nitrogen, oxynitride, so that the concentration of the first species gradually increases in the direction from the first substrate 200 to the gate insulating layer 400.
In this embodiment, the concentration of the first substance gradually increases in a direction from the first substrate 200 to the gate insulating layer 400. I.e., deposition at a later stage in the fabrication of the active layer 300, one or more of the following combinations are introduced: nitrogen and oxynitride, wherein the nitrogen doping is mainly concentrated near the gate insulating layer 400, especially when the nitrogen doping is near the gate insulating layer 400 and occupies 5% -30% of the thickness of the active layer 300, the active layer 300 has the highest material performance of corrosion resistance and scratch resistance in the direction of the gate insulating layer 400, and can better resist corrosion or physical scratching from the direction of the gate insulating layer 400.
In this embodiment, step S131 includes:
s1311, depositing a thin film on the buffer layer 220, wherein the depositing process includes flowing one or more of the following combinations before depositing: nitrogen, oxynitride, stopping the gas flow during the middle deposition period, wherein the deposition process comprises the following one or more combinations during the later deposition period: nitrogen, oxynitride, so that the concentration of the first species first decreases and then increases in the direction from the first substrate 200 to the gate insulating layer 400.
In this embodiment, the concentration of the first substance is first decreased and then increased in a direction from the first substrate 200 to the gate insulating layer 400. I.e., deposition before and after the active layer 300 is fabricated, one or more of the following combinations are introduced: nitrogen and oxynitride, during the middle deposition period of the active layer 300, the ventilation is stopped, and the nitrogen doping is mainly concentrated near the first substrate 200 and the gate insulating layer 400, especially when the nitrogen doping is near the first substrate 200 and occupies 5% to 30% of the film thickness of the active layer 300 and when the nitrogen doping is near the gate insulating layer 400 and occupies 5% to 30% of the film thickness of the active layer 300, the active layer 300 has the highest material performance of corrosion resistance and scratch resistance in the direction of the first substrate 200 and the direction of the gate insulating layer 400, and can better resist corrosion or physical scratch from the direction of the first substrate 200 and the direction of the gate insulating layer 400.
And S132, patterning the thin film to form an active layer 300.
S200, forming a gate insulating layer 400 on the active layer 300.
In this embodiment, the material of the gate insulating layer 400 includes SiO x Or/and SiN x . The thickness of the gate insulating layer 400 is 1000 to 3000 angstroms, and refer to fig. 1 and 2.
S300, sequentially forming a gate electrode layer 500 and an insulating layer 600 on the gate insulating layer 400.
In this embodiment, the material of the gate layer 500 is one or a combination of Mo, Al, Cu, and Ti. The thickness of the gate layer 500 is 2000 to 8000 angstrom, which is shown in fig. 1 and 2.
In this embodiment, step S300 includes:
and S310, forming a gate electrode layer 500 on the gate insulating layer 400.
And S320, conducting the second region 320 of the active layer 300.
In this embodiment, S320 further includes:
s321, using the gate insulating layer 400 as a mask, conducting the second region 320 of the active layer 300, and simultaneously introducing one or more of the following combinations: nitrogen, nitrogen oxides.
In this embodiment, the gate insulating layer 400 is located in the active layer 300 in the orthographic projection of the active layer 300, and the first substance is located in the second region 320 of the active layer 300. The second region 320 is a non-contact region between the active layer 300 and the gate insulating layer 400, and the second region 320 corresponds to a conductive region of the active layer 300, specifically referring to fig. 1 and fig. 2, in a manufacturing process, the gate insulating layer 400 may be used as a mask plate, and when the second region 320 is subjected to conductive processing, one or more of the following combinations are introduced: nitrogen, an oxynitride, the active layer 300 having the highest material properties for overall corrosion resistance and scratch resistance with the second region 320 may better resist corrosion or physical scratching from the second region 320.
In this embodiment, after forming the gate electrode layer on the gate insulating layer and before forming the insulating layer, the method further includes:
and carrying out plasma gas treatment on the second area of the active layer, and introducing one or more of the following combinations: nitrogen, nitrogen oxide, forming the first species. The second region is a non-contact region between the active layer and the gate insulating layer, which is specifically referred to in fig. 1 and fig. 2. Subjecting the second region of the active layer to a plasma gas treatment by passing one or a combination of: nitrogen, oxynitride, forming the first species, the active layer 300 may have the highest material properties for overall corrosion resistance, scratch resistance with the second region 320, and may be better resistant to corrosion or physical scratch-and-chop from the second region 320. The second region may be doped during the formation of the conductor, or may be doped separately.
In this embodiment, the material of the insulating layer 600 includes SiO x Or/and SiN x 。
S400, forming a first via hole 610 on the insulating layer 600, wherein the first via hole 610 penetrates through the insulating layer 600 and the gate insulating layer 600, so as to expose the active layer 300.
In this embodiment, after step S400, the method further includes:
s410, performing plasma treatment on the first region 310 of the active layer 300 while introducing one or more of the following combinations: nitrogen, nitrogen oxides.
In this embodiment, the contact surface between the source/drain layer 700 and the active layer 300 corresponds to the first region 310 of the active layer 300, and the concentration of the first substance in the first region 310 is greater than the concentration of the first substance in the active layer 300 at the periphery of the first region 310. The first region 310 corresponds to a region where the first via 610 is cut on the active layer 300, and in particular, referring to fig. 1 and fig. 2, after the first via 610 is formed during the manufacturing of the display panel 100, one or more of the following combinations are applied during the plasma processing: nitrogen, oxynitride, have good corrosion resistance or physical resistance to scratching in the region where the active layer 300 contacts the source drain layer 700. The nitrogen doping may be performed only in the first region 310, or may be performed a second time after the nitrogen doping of the above embodiment is formed.
In this embodiment, the first via 610 forms an opening on the active layer 300, that is, the active layer 300 includes a portion of the first via 610, but the first via 610 does not penetrate through the active layer 300, as shown in fig. 2. The structure increases the contact area of the active layer 300 when the first region 310 is doped with nitrogen, facilitates nitrogen doping, is beneficial to diffusing nitrogen elements in the first region 310, and is beneficial to stably contacting the source drain layer 700 with the active layer 300, and the source drain layer 700 is nailed on the active layer 300 like a nail, so that the electrical connection between the active layer 300 and the source drain is stabilized.
S420, annealing and hydrogenating the first region 310 to gradually decrease the concentration of the first substance in a direction from the periphery of the active layer 300 to the center of the active layer 300.
In the present embodiment, the concentration of the first substance gradually decreases in a direction from the periphery of the active layer 300 to the center of the active layer 300. After the first region 310 corresponding to the first via hole 610 is doped with nitrogen, nitrogen is diffused from the first region 310 by an annealing hydrogenation process, so that more regions of the active layer 300 are doped with nitrogen, and better electrical stability and enlarged corrosion resistance and scratch resistance of the edge of the first region 310 are achieved.
S500, forming a source drain layer 700 on the insulating layer 600, wherein the source drain layer 700 is electrically connected to the active layer 300 through the first via hole 610.
In this embodiment, the source drain layer 700 is made of one or a combination of Mo, Al, Cu, and Ti.
In this embodiment, after step S500, the method further includes:
and S600, forming a passivation layer 800 on the source drain layer 700.
In this embodiment, the display panel 100 further includes a passivation layer 800 on the source/drain layer 700, which is specifically referred to in fig. 1 and fig. 2. The material of the passivation layer 800 includes SiO x Or/and SiN x . The thickness of the passivation layer 800 is 1000 to 5000 angstroms.
S700, sequentially forming a flat layer 810 and an electrode layer on the flat layer 810 on the passivation layer 800.
In the present embodiment, the display panel 100 further includes a flat layer 810 on the passivation layer 800, and an electrode layer on the flat layer 810, specifically referring to fig. 1 and fig. 2. The electrode wires 900 of the electrode layer are electrically connected to the source drain layer 700 through third via holes 811.
According to the method, the nitrogen element is added into the metal oxide containing the indium element and the tin element to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
The application discloses a display panel and a manufacturing method thereof. The display panel comprises a first substrate, an active layer positioned on the first substrate, a gate insulating layer positioned on the active layer, and a source drain layer positioned on the gate insulating layer and electrically connected with the active layer; the material of the active layer comprises a first substance and a second substance, wherein the first substance comprises nitrogen element, and the second substance comprises indium element and tin element. According to the method, the nitrogen element is added into the metal oxide containing the indium element and the tin element to form the nitrogen-containing high-mobility metal oxide film, so that the light, heat and electric stability of the active semiconductor layer is improved, and the working performance of the whole thin film transistor display device is improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above embodiments of the present application are described in detail, and specific examples are applied in the present application to explain the principles and implementations of the present application, and the description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (9)
1. A display panel is characterized by comprising a first substrate, an active layer positioned on the first substrate, a gate insulating layer positioned on the active layer, a gate layer positioned on the gate insulating layer, an insulating layer positioned on the gate layer, and a source drain layer positioned on the insulating layer and electrically connected with the active layer through a plurality of first through holes;
the active layer comprises a first substance and a second substance, the first substance comprises nitrogen elements, the second substance comprises indium elements and tin elements, the contact surface of the source drain layer and the active layer corresponds to a first area of the active layer, and the concentration of the first substance in the first area is greater than that of the first substance on the periphery of the first area in the active layer.
2. The display panel of claim 1, wherein the nitrogen element of the first substance is from a combination of one or more of: nitrogen, nitrogen oxides;
the second substance is one or the combination of more of indium gallium tin oxide, indium tin zinc oxide and indium gallium zinc tin oxide.
3. The display panel according to claim 1, wherein a concentration of the first substance is gradually decreased in a direction from the first substrate to the gate insulating layer.
4. The display panel according to claim 1, wherein a concentration of the first substance is gradually increased in a direction from the first substrate to the gate insulating layer.
5. The display panel according to claim 1, wherein a concentration of the first substance is decreased and then increased in a direction from the first substrate to the gate insulating layer.
6. The display panel according to claim 1, wherein a concentration of the first substance is gradually decreased in a direction from a periphery of the active layer to a center of the active layer.
7. A method for manufacturing a display panel is characterized by comprising the following steps:
forming an active layer on a first substrate;
forming a gate insulating layer on the active layer;
sequentially forming a gate electrode layer and an insulating layer on the gate insulating layer;
forming a first via hole on the insulating layer, wherein the first via hole penetrates through the insulating layer and the gate insulating layer to expose the active layer;
forming a source drain layer on the insulating layer, wherein the source drain layer is electrically connected with the active layer through the first via hole;
the active layer comprises a first substance and a second substance, the first substance comprises nitrogen elements, the second substance comprises indium elements and tin elements, the contact surface of the source drain layer and the active layer corresponds to a first area of the active layer, and the concentration of the first substance in the first area is greater than that of the first substance on the periphery of the first area in the active layer.
8. The method for manufacturing the display panel according to claim 7, wherein a first via hole is formed in the insulating layer, and after the first via hole exposes the active layer, the method further comprises:
and forming the first substance by plasma gas treatment and introducing one or more combinations of nitrogen and/or oxynitride, wherein the first substance is positioned in a corresponding area of the contact surface of the source drain layer and the active layer.
9. The method for manufacturing a display panel according to claim 7, further comprising, after forming the gate electrode layer on the gate insulating layer and before forming the insulating layer:
subjecting the second region of the active layer to a plasma gas treatment by passing one or a combination of: nitrogen, a nitrogen oxide, forming the first species;
wherein the second region is a non-contact region of the active layer and the gate insulating layer.
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| CN106169480A (en) * | 2015-05-22 | 2016-11-30 | 乐金显示有限公司 | There is the thin film transistor base plate of high reliability metal oxide semiconductor material |
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| US20200052100A1 (en) * | 2018-08-09 | 2020-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
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| US9324739B1 (en) * | 2014-11-03 | 2016-04-26 | Ishiang Shih | Thin film transistors with metal oxynitride active channels for electronic displays |
| CN105304723A (en) * | 2015-09-30 | 2016-02-03 | 京东方科技集团股份有限公司 | Film transistor, array substrate, manufacturing method and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106169480A (en) * | 2015-05-22 | 2016-11-30 | 乐金显示有限公司 | There is the thin film transistor base plate of high reliability metal oxide semiconductor material |
| CN106971944A (en) * | 2017-05-22 | 2017-07-21 | 深圳市华星光电技术有限公司 | The preparation method and its structure of metal oxide thin-film transistor |
| US20200052100A1 (en) * | 2018-08-09 | 2020-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
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