CN111996592A - Device, system and method for discharging reaction tail gas generated in epitaxial growth of silicon wafer - Google Patents

Device, system and method for discharging reaction tail gas generated in epitaxial growth of silicon wafer Download PDF

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Publication number
CN111996592A
CN111996592A CN202010917215.5A CN202010917215A CN111996592A CN 111996592 A CN111996592 A CN 111996592A CN 202010917215 A CN202010917215 A CN 202010917215A CN 111996592 A CN111996592 A CN 111996592A
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tail gas
electromagnetic wave
reaction
exhaust gas
byproduct
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张凌云
牛景豪
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Xian Eswin Silicon Wafer Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

The embodiment of the invention discloses a device, a system and a method for exhausting reaction tail gas generated in epitaxial growth of a silicon wafer, and belongs to the field of semiconductor manufacturing. The device comprises: a tail gas conveying pipeline for conveying the reaction tail gas, wherein the reaction tail gas generates various byproducts capable of accumulating inside the tail gas conveying pipeline in the process of being conveyed through the tail gas conveying pipeline; an electromagnetic wave radiator disposed at a periphery of the exhaust gas delivery pipe, the electromagnetic wave radiator being configured to radiate an electromagnetic wave to an inside of the exhaust gas delivery pipe so as to prevent the byproduct from being generated by blocking a chemical bond formation of the same type as a chemical bond of the byproduct using the electromagnetic wave, and to reduce an amount of the byproduct by breaking the chemical bond of the byproduct that has been generated using the electromagnetic wave. The invention can simply and efficiently prevent the generation of byproducts in the tail gas conveying pipeline.

Description

Device, system and method for discharging reaction tail gas generated in epitaxial growth of silicon wafer
Technical Field
The invention relates to the field of silicon wafer epitaxial growth, in particular to a device, a system and a method for discharging reaction tail gas generated in the silicon wafer epitaxial growth.
Background
The epitaxial growth of silicon wafers is an important process in the field of semiconductor chip manufacturing, and the process is to deposit a thin layer of orderly arranged monocrystalline silicon, namely an epitaxial layer, on the polished silicon wafers according to the crystal orientation of the silicon wafers, so that the silicon wafers with the epitaxial layer are called epitaxial silicon wafers. The epitaxial silicon wafer is widely applied due to the fact that the resistivity and the thickness of the epitaxial layer are controllable, crystal primary particle defects do not exist, and oxygen-free precipitation does not exist.
The epitaxial growth of silicon wafers can be carried out by vacuum epitaxial deposition, vapor phase epitaxial deposition, liquid phase epitaxial deposition and the like, wherein the vapor phase epitaxial deposition is most widely applied. The epitaxial growth referred to in the present invention refers to epitaxial growth carried out by vapor phase epitaxial deposition, unless otherwise specified.
Referring to fig. 1, there is shown a schematic view of an apparatus 1A of the prior art for epitaxial growth of a silicon wafer W. As shown in fig. 1, the apparatus 1A may include:
the epitaxial furnace 10A is used for accommodating the silicon wafer W, providing a high-temperature and high-pressure environment, and introducing a reaction source gas to realize epitaxial growth of the silicon wafer W, wherein a reaction tail gas is generated in the epitaxial furnace 10A in the epitaxial growth process of the silicon wafer W;
an off-gas delivery duct 20A for delivering the reaction off-gas from the epitaxial furnace 10A, the reaction off-gas delivered via the off-gas delivery duct 20A being schematically shown by hollow arrows in fig. 1;
and the tail gas purification device 30A is used for receiving the reaction tail gas conveyed by the tail gas conveying pipeline 20A, carrying out nontoxic and harmless purification treatment on the received reaction tail gas and discharging the treated reaction tail gas into the atmosphere.
In the conventional apparatus 1A for epitaxial growth of silicon wafers W shown in fig. 1, the reaction off-gas generates various by-products BP capable of accumulating inside the off-gas supply line 20A during the supply thereof from the epitaxial furnace 10A to the off-gas purification apparatus 30A via the off-gas supply line 20A, and these by-products BP will be described in detail later.
The reaction source gas introduced into the epitaxial furnace 10A to realize the epitaxial growth of the silicon wafer W mainly includes: dichlorosilane SiH2Cl2, trichlorosilane SiHCl3, hydrogen chloride HCl and the like, chemical bonds of reaction source gas are broken under the action of high temperature and high pressure in an epitaxial furnace, so that silicon atoms Si, hydrogen atoms H and chlorine atoms Cl are formed, and these atoms are transiently excited into metastable active atoms when being discharged into a tail gas conveying pipeline 20A along with reaction tail gas from an epitaxial furnace 10A providing a heating temperature of about 1120 ℃, so as to generate different byproducts BP under different environmental conditions, which will be exemplified below.
Without contacting with air, silicon atoms Si, hydrogen atoms H and chlorine atoms Cl in the reaction tail gas may form chlorosilane, the chlorosilane may be further combined to form chlorosilane high polymer, and the chlorosilane high polymer may be connected into long-chain chlorosilane polymers through chemical chains. The chemical formula of chlorosilane can be represented as SiaClbHcWherein a is<7，b<6，c<3. The chlorosilane is physically embodied as a white transparent viscous liquid when not in contact with air, and is not easy to flow like mineral oil or vaseline. The white viscous liquid is gradually gathered and attached to the inner wall of the tail gas conveying pipeline 20A, and the long-term accumulation of the white viscous liquid can block the tail gas conveying pipeline 20A, so that the tail gas is not smoothly exhausted, and even explosion accidents can be caused.
When the exhaust pipe and related parts generate leakage to cause the chlorosilane to contact with air, the chlorosilane and the air react to form siloxane high polymer. The structure of siloxane is core-shell structure, and the shell is a layer of SiO2And the interior is wrapped with chlorosilane liquid. The siloxane can be represented by the formula HSizO2Wherein z is<7. The siloxane is physically embodied as a yellow-green solid that adheres to the inner wall of the exhaust gas delivery conduit 20A. Since chlorosilane is a metastable intermediate, when the tail gas conveying pipeline 20A leaks or air instantly rushes into the tail gas conveying pipeline 20A during the maintenance of the tail gas conveying pipeline 20A so that chlorosilane in the tail gas conveying pipeline 20A contacts water vapor and oxygen in the air or generates friction with high-speed airflow, atoms of chlorosilane are highly excited to vibrate in a transient state, thereby rapidly generating violent chemical reaction,causing the chlorosilane to self-ignite and generate open fire, and if the chlorosilane continues to react in a limited space, the chlorosilane will emit a popping sound.
Under the high-temperature excitation action in the epitaxial furnace 10A, Si-H bonds in the reaction source gas are broken, and silicon atoms Si are combined with H +, Cl-and SiH4 ions in a chemical bond mode to form silicon dust. The silica fume is a particle of a submicron order and adheres to the inner wall of the entire exhaust gas transport duct 20A, presenting a reddish brown silica layer.
The main means for handling these by-products at present may include, for example, regular maintenance to remove the by-products from the exhaust gas transportation pipeline and regular replacement of the pipeline, but these methods are expensive, costly and dangerous, for example, the by-products may be spontaneously combusted or even exploded when in contact with air during maintenance or replacement, which brings great danger to the operators.
The by-products can also be removed by passing a gas that reacts with the by-products through the off-gas duct, but this method has the disadvantage that new by-products may be produced.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention desirably provide an apparatus, a system, and a method for exhausting reaction off-gas generated during epitaxial growth of silicon wafers, which can simply and efficiently prevent by-products from being generated and accumulated in an off-gas conveying pipeline, thereby greatly improving the safety and stability of an epitaxial exhaust system, and saving the manual maintenance cost and the pipeline replacement cost.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides an apparatus for exhausting reaction off-gas in epitaxial growth of a silicon wafer, where the apparatus includes:
a tail gas conveying pipeline for conveying the reaction tail gas, wherein the reaction tail gas generates various byproducts capable of accumulating inside the tail gas conveying pipeline in the process of being conveyed through the tail gas conveying pipeline;
an electromagnetic wave radiator disposed at a periphery of the exhaust gas delivery pipe, the electromagnetic wave radiator being configured to radiate an electromagnetic wave to an inside of the exhaust gas delivery pipe so as to prevent the byproduct from being generated by blocking a chemical bond formation of the same type as a chemical bond of the byproduct using the electromagnetic wave, and to reduce an amount of the byproduct by breaking the chemical bond of the byproduct that has been generated using the electromagnetic wave.
In a second aspect, an embodiment of the present invention provides a system for exhausting reaction off-gas in epitaxial growth of a silicon wafer, the system including:
the apparatus of the first aspect;
and the tail gas purification device is used for carrying out non-toxic and harmless purification treatment on the reaction tail gas conveyed by the tail gas conveying pipeline and discharging the treated reaction tail gas into the atmosphere.
In a third aspect, the embodiment of the invention provides a method for exhausting reaction tail gas in epitaxial growth of silicon wafers, which is applied to the system according to the second aspect, and the method comprises the following steps:
conveying the reaction tail gas through the tail gas conveying pipeline, wherein the reaction tail gas generates various byproducts which can be accumulated inside the tail gas conveying pipeline in the conveying process through the tail gas conveying pipeline;
radiating electromagnetic waves to the inside of the exhaust gas delivery pipe using the electromagnetic wave radiator so as to prevent the byproduct from being generated by blocking the formation of chemical bonds of the same type as those of the byproduct using the electromagnetic waves, and to reduce the amount of the byproduct by breaking the chemical bonds of the byproduct that have been generated using the electromagnetic waves;
and carrying out nontoxic and harmless purification treatment on the reaction tail gas conveyed by the tail gas conveying pipeline by using the tail gas purification device, and discharging the treated reaction tail gas into the atmosphere.
The embodiment of the invention provides a device, a system and a method for discharging reaction tail gas generated in epitaxial growth of silicon wafers, which do not need to regularly maintain a tail gas conveying pipeline to remove internal byproducts, do not need to regularly replace a new pipeline, and do not need to introduce gas capable of reacting with the byproducts into the tail gas conveying pipeline, but prevent the formation of chemical bonds through the energy of electromagnetic waves so as to prevent the generation of the byproducts and break the existing chemical bonds so as to reduce the amount of the byproducts, so that the generation and the accumulation of the byproducts in the tail gas conveying pipeline are simply and efficiently prevented, the safety and the stability of an epitaxial exhaust system are greatly improved, the manual maintenance cost and the pipeline replacement cost are saved, and the generation of new byproducts is avoided.
Drawings
FIG. 1 is a schematic view of a conventional apparatus for epitaxial growth of a silicon wafer;
FIG. 2 is a schematic view of an apparatus for exhausting reaction off-gas for epitaxial growth of a silicon wafer according to an embodiment of the present invention;
FIG. 3 is a schematic view of another apparatus for exhausting reaction off-gas from epitaxial growth of silicon wafers according to an embodiment of the present invention, wherein a pressure control valve is disposed in the off-gas delivery pipe;
FIG. 4 is a schematic view of another apparatus for exhausting reaction off-gas for epitaxial growth of silicon wafers according to an embodiment of the present invention, wherein the off-gas delivery pipe comprises a bellows;
FIG. 5 is a schematic view of another apparatus for exhausting reaction off-gas for epitaxial growth of silicon wafers according to an embodiment of the present invention, wherein the off-gas supply pipe includes a bent portion;
FIG. 6 is a schematic view of another apparatus for exhausting reaction off-gas for epitaxial growth of silicon wafers according to an embodiment of the present invention, wherein a pump is disposed in the off-gas delivery pipe;
FIG. 7 is a schematic view of another apparatus for exhausting reaction off-gas in epitaxial growth of silicon wafers according to an embodiment of the present invention, wherein the electromagnetic wave radiator is an extreme ultraviolet radiation lamp;
FIG. 8 is a schematic view of a system for exhausting reaction off-gas for epitaxial growth of a silicon wafer according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a method for exhausting reaction off-gas from epitaxial growth of a silicon wafer according to an embodiment of the present invention;
fig. 10 is a schematic diagram of an apparatus for epitaxial growth of a silicon wafer according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The reaction source gas introduced into the epitaxial furnace to realize the epitaxial growth of the silicon wafer mainly comprises: dichlorosilane SiH2Cl2, trichlorosilane SiHCl3, hydrogen chloride HCl and the like, chemical bonds of reaction source gas are broken under the action of high temperature and high pressure in an epitaxial furnace, so that silicon atoms Si, hydrogen atoms H and chlorine atoms Cl are formed, but the chemical bonds formed by three atoms of silicon atoms Si, hydrogen atoms H and chlorine atoms Cl generally include only the following four types:
1) a covalent bond formed between silicon atoms, Si ═ Si, the bond energy of the covalent bond being 226 KJ/mol;
2) a covalent bond Si ═ Cl formed between the silicon atom and the chlorine atom, the bond energy of the covalent bond being 381 KJ/mol;
3) a covalent bond Si ═ H formed between the silicon atom and the hydrogen atom, the bond energy of the covalent bond being 318 KJ/mol;
4) the covalent bond formed between the silicon atom and the oxygen atom, Si ═ O, and the bond energy of the covalent bond is 452 KJ/mol.
Therefore, if an electromagnetic wave having a radiation energy greater than the bond energy of the covalent bond is supplied to the exhaust gas transport pipe, the formation of the by-product bonded by the covalent bond can be prevented, and the covalent bond of the by-product bonded by the covalent bond can be broken to eliminate the by-product. Based on this, referring to fig. 2, an embodiment of the present invention provides an apparatus 100 for exhausting reaction off-gas for epitaxial growth of a silicon wafer. As shown in fig. 2, the apparatus 100 may include:
an off-gas conveying pipe 110 for conveying the reaction off-gas, in fig. 2, only a portion of the off-gas conveying pipe 110 between two arc-shaped dashed lines is schematically shown, and the reaction off-gas conveyed through the off-gas conveying pipe 110 is schematically shown by a hollow arrow, wherein the reaction off-gas generates various by-products BP capable of accumulating inside the off-gas conveying pipe 110 during the conveying through the off-gas conveying pipe 110;
an electromagnetic wave radiator 120 disposed at the periphery of the exhaust gas delivery pipe 110, the electromagnetic wave radiator 120 being configured to radiate electromagnetic waves EW to the inside of the exhaust gas delivery pipe 110, in fig. 2, the electromagnetic waves EW radiated by the electromagnetic wave radiator 120 are schematically shown by a chain line with arrows, so as to prevent the byproduct BP from being generated by blocking the chemical bond formation of the same type as that of the byproduct BP using the electromagnetic waves EW, and to reduce the amount of the byproduct BP by breaking the chemical bond of the byproduct BP that has been generated using the electromagnetic waves EW.
According to the invention, the tail gas conveying pipeline does not need to be periodically maintained to remove the internal by-products, a new pipeline does not need to be periodically replaced, gas capable of reacting with the by-products does not need to be introduced into the tail gas conveying pipeline, the formation of chemical bonds is prevented through the energy of electromagnetic waves, so that the generation of the by-products is prevented, the existing chemical bonds are broken, and the quantity of the by-products is reduced, therefore, the generation and the accumulation of the by-products in the tail gas conveying pipeline are simply and efficiently prevented, the safety and the stability of an epitaxial exhaust system are greatly improved, the manual maintenance cost and the pipeline replacement cost are saved, and the generation of new by-products is avoided.
During the transportation of the reaction off-gas in the off-gas transportation pipeline 110, it may be necessary to adjust the pressure of the reaction off-gas so as to control the circulation speed of the reaction off-gas in the off-gas transportation pipeline 110 or to cut off the circulation of the reaction off-gas in the off-gas transportation pipeline 110. Therefore, in a preferred embodiment of the present invention, referring to fig. 3, a pressure control valve PV may be disposed in the exhaust gas delivery pipe 110. In this case, various by-products BP generated during the transportation of the reaction off-gas via the off-gas transportation pipe 110 are liable to be accumulated at the pressure control valve PV, and thus the electromagnetic wave radiator 120 may be located at a position opposite to the pressure control valve PV in the extending direction along the off-gas transportation pipe 110, so as to prevent the by-products BP from being generated at the pressure control valve PV as much as possible or to reduce the amount of the by-products BP already existing at the pressure control valve PV as much as possible.
To facilitate connection of the downstream components, the exhaust gas delivery conduit 110 may need to be telescopic. Thus, in a preferred embodiment of the present invention, referring to fig. 4, the exhaust gas delivery conduit 110 may comprise a bellows CP. In this case, various byproducts BP generated from the reaction offgas during the transportation through the offgas transportation pipe 110 are liable to be accumulated at the bellows CP, and thus the electromagnetic wave radiator 120 may be located at a position opposite to the bellows CP in the extending direction along the offgas transportation pipe 110, so as to prevent the byproducts BP from being generated at the bellows CP as much as possible or to reduce the amount of the byproducts BP that have been present at the bellows CP as much as possible.
To facilitate connection of the components downstream, the exhaust gas delivery conduit 110 may need to be curved. Therefore, in a preferred embodiment of the present invention, referring to fig. 5, the exhaust gas delivery pipe 110 may include a curved portion BE. In this case, various by-products BP generated from the reaction exhaust gas during the transportation through the exhaust gas transportation pipe 110 are liable to BE accumulated at the curved portion BE, and thus it is possible to locate the electromagnetic wave radiator 120 at a position opposite to the curved portion BE in the extending direction along the exhaust gas transportation pipe 110, so as to prevent the by-products BP from being generated at the curved portion BE as much as possible or to reduce the amount of the by-products BP already existing at the curved portion BE as much as possible.
The circulation of the reaction off-gas in the off-gas transport conduit 110 may need to be powered. Therefore, in a preferred embodiment of the present invention, referring to fig. 6, a pump PU may be provided in the exhaust gas conveying pipe 110. In this case, various by-products BP generated during the transportation of the reaction exhaust gas via the exhaust gas transportation pipe 110 are liable to accumulate at the pump PU, and therefore the electromagnetic wave radiator 120 can be located at a position opposite to the pump PU in the extending direction along the exhaust gas transportation pipe 110, so as to prevent the by-products BP from being generated at the pump PU as much as possible or to reduce the amount of the by-products BP already existing at the pump PU as much as possible.
In a preferred embodiment of the present invention, the exhaust gas delivery pipe 110 is made of stainless steel pipe having a thickness of 3 to 5 mm. The material and thickness of the steel pipe are suitable for the electromagnetic wave to have enough energy after passing through the pipe wall so as to prevent chemical bonds from forming or break the formed chemical bonds.
In a preferred embodiment of the present invention, the distance between the electromagnetic wave radiator 120 and the exhaust gas conveying pipe 110 is 1 cm. This spacing ensures that the electromagnetic waves, after being radiated into the interior of the exhaust gas delivery pipe 110, still have sufficient energy to prevent chemical bonds from forming or breaking the formed chemical bonds.
In a preferred embodiment of the present invention, referring to fig. 7, the electromagnetic wave radiator is an extreme ultraviolet light radiation lamp L radiating extreme ultraviolet light. The extreme ultraviolet light radiated from the extreme ultraviolet radiation lamp L is high-frequency short-wavelength monochromatic light having photon energy of 6.2 to 10.2eV, and even after passing through the wall of the exhaust gas transport duct 110, the energy is much larger than the bond energy of the covalent bond, so that the formation of the by-product bonded by the covalent bond can be prevented, and the covalent bond of the by-product bonded by the covalent bond can be broken to thereby eliminate the by-product.
Referring to fig. 8, a system 10 for exhausting reaction off-gas from epitaxial growth of a silicon wafer is also provided. As shown in fig. 8, the system 10 may include:
an apparatus 100 according to the invention;
an exhaust gas purification device 200, wherein the exhaust gas purification device 200 is configured to perform a nontoxic and harmless purification treatment on the reaction exhaust gas conveyed by the exhaust gas conveying pipeline 110 and discharge the treated reaction exhaust gas into the atmosphere.
Referring to fig. 9, an embodiment of the present invention further provides a method for exhausting reaction off-gas for epitaxial growth of silicon wafers, which is applied to the system 10 according to the present invention. As shown in fig. 9, the method may include:
s901: conveying the reaction tail gas through the tail gas conveying pipe 110, wherein the reaction tail gas generates various byproducts BP capable of being accumulated inside the tail gas conveying pipe 110 in the process of being conveyed through the tail gas conveying pipe 110;
s902: irradiating electromagnetic waves EW inside the exhaust gas transport pipe 110 with the electromagnetic wave radiator 120 so as to prevent the byproduct BP from being generated by blocking the same type of chemical bond formation as that of the byproduct BP with the electromagnetic waves EW, and to reduce the amount of the byproduct BP by breaking the chemical bond of the byproduct BP that has been generated with the electromagnetic waves EW;
s903: and the tail gas purification device is used for carrying out nontoxic and harmless purification treatment on the reaction tail gas conveyed by the tail gas conveying pipeline 110 and discharging the treated reaction tail gas into the atmosphere.
Referring to fig. 10, an apparatus 1 for epitaxial growth of a silicon wafer W is also provided in an embodiment of the present invention. As shown in fig. 10, the apparatus 1 may include:
a system 10 for exhausting reaction off-gas for epitaxial growth of silicon wafers according to the present invention;
and an epitaxial furnace 20, wherein the epitaxial furnace 10A is used for accommodating the silicon wafer W, providing a high-temperature and high-pressure environment, and introducing a reaction source gas to realize the epitaxial growth of the silicon wafer W, and reaction tail gas generated in the epitaxial furnace 10A during the epitaxial growth of the silicon wafer W is discharged into a tail gas conveying pipeline 110 of the apparatus 100 of the system 10.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (10)

1. An apparatus for exhausting reaction off-gas for epitaxial growth of silicon wafers, comprising:
a tail gas conveying pipeline for conveying the reaction tail gas, wherein the reaction tail gas generates various byproducts capable of accumulating inside the tail gas conveying pipeline in the process of being conveyed through the tail gas conveying pipeline;
an electromagnetic wave radiator disposed at a periphery of the exhaust gas delivery pipe, the electromagnetic wave radiator being configured to radiate an electromagnetic wave to an inside of the exhaust gas delivery pipe so as to prevent the byproduct from being generated by blocking a chemical bond formation of the same type as a chemical bond of the byproduct using the electromagnetic wave, and to reduce an amount of the byproduct by breaking the chemical bond of the byproduct that has been generated using the electromagnetic wave.
2. The apparatus according to claim 1, wherein the exhaust gas delivery pipe is provided with a pressure control valve, and the electromagnetic wave radiator is located at a position opposite to the pressure control valve in an extending direction along the exhaust gas delivery pipe.
3. The apparatus according to claim 1, wherein the exhaust gas conveying pipe comprises a corrugated pipe, and the electromagnetic wave radiator is located at a position opposite to the corrugated pipe in an extending direction along the exhaust gas conveying pipe.
4. The arrangement according to claim 1, characterized in that the exhaust gas conveying duct comprises a curved portion and the electromagnetic wave radiator is located opposite the curved portion in the extension direction along the exhaust gas conveying duct.
5. The apparatus according to claim 1, wherein a pump is provided in the exhaust gas conveying pipe, and the electromagnetic wave radiator is located at a position opposite to the pump in an extending direction along the exhaust gas conveying pipe.
6. The apparatus of claim 1, wherein the exhaust gas delivery conduit is made of stainless steel tubing having a thickness of 3-5 mm.
7. The apparatus according to claim 1, wherein the distance between the electromagnetic wave radiator and the exhaust gas conveying pipe is 1 cm.
8. The apparatus according to any one of claims 1 to 7, wherein the electromagnetic wave radiator is an extreme ultraviolet light radiation lamp radiating extreme ultraviolet light.
9. A system for exhausting reaction off-gas from epitaxial growth of a silicon wafer, the system comprising:
the device of any one of claims 1 to 8;
and the tail gas purification device is used for carrying out non-toxic and harmless purification treatment on the reaction tail gas conveyed by the tail gas conveying pipeline and discharging the treated reaction tail gas into the atmosphere.
10. A method for exhausting reaction off-gas for epitaxial growth of silicon wafers, applied to the system according to claim 9, comprising:
conveying the reaction tail gas through the tail gas conveying pipeline, wherein the reaction tail gas generates various byproducts which can be accumulated inside the tail gas conveying pipeline in the conveying process through the tail gas conveying pipeline;
radiating electromagnetic waves to the inside of the exhaust gas delivery pipe using the electromagnetic wave radiator so as to prevent the byproduct from being generated by blocking the formation of chemical bonds of the same type as those of the byproduct using the electromagnetic waves, and to reduce the amount of the byproduct by breaking the chemical bonds of the byproduct that have been generated using the electromagnetic waves;
and carrying out nontoxic and harmless purification treatment on the reaction tail gas conveyed by the tail gas conveying pipeline by using the tail gas purification device, and discharging the treated reaction tail gas into the atmosphere.
CN202010917215.5A 2020-09-03 2020-09-03 Device, system and method for discharging reaction tail gas generated in epitaxial growth of silicon wafer Pending CN111996592A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103203211A (en) * 2013-03-25 2013-07-17 青岛东方循环能源有限公司 Wave splitting method for carbon-carbon single-bond organics
CN106145037A (en) * 2015-04-01 2016-11-23 大连中鼎化学有限公司 The device of hydrogen and the method for High Purity Hydrogen processed is reclaimed from silicon epitaxial furnace emptying end gas
CN109641754A (en) * 2016-11-16 2019-04-16 株式会社Ihi The stabilization method of chlorosilane polymer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103203211A (en) * 2013-03-25 2013-07-17 青岛东方循环能源有限公司 Wave splitting method for carbon-carbon single-bond organics
CN106145037A (en) * 2015-04-01 2016-11-23 大连中鼎化学有限公司 The device of hydrogen and the method for High Purity Hydrogen processed is reclaimed from silicon epitaxial furnace emptying end gas
CN109641754A (en) * 2016-11-16 2019-04-16 株式会社Ihi The stabilization method of chlorosilane polymer
EP3543211A1 (en) * 2016-11-16 2019-09-25 IHI Corporation Method for stabilizing chlorosilane polymer

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