CN111987236B - 发光器件 - Google Patents

发光器件 Download PDF

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CN111987236B
CN111987236B CN202010911623.XA CN202010911623A CN111987236B CN 111987236 B CN111987236 B CN 111987236B CN 202010911623 A CN202010911623 A CN 202010911623A CN 111987236 B CN111987236 B CN 111987236B
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景姝
杜小波
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BOE Technology Group Co Ltd
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Abstract

本公开提供了一种发光器件，包括：第一电极；第一发光层，其位于所述第一电极的一侧；N‑CGL层，其位于所述第一发光层远离所述第一电极的一侧；P‑CGL层，其位于所述N‑CGL层远离所述第一发光层的一侧；第二发光层，其位于所述P‑CGL层远离所述N‑CGL层的一侧；以及第二电极，其位于所述第二发光层远离所述P‑CGL层的一侧，其中，所述N‑CGL层的主体材料的最低未占分子轨道能级低于或等于‑2.9，玻璃化温度大于130℃。

Description

发光器件
技术领域
本公开涉及显示技术领域，具体地说，涉及一种发光器件。
背景技术
有机电致发光器件(OLED)同时具备全固态、白发光、响应速度块、视角广泛、工作温度范围广等一系列优点，受到越来越多的学界和产业界的关注。经过多年不断的积极探索，器件的结构和工艺的以及相关材料的进一步优化，有机电致发光已经取得了长足进步，目前已经实现了产业化。
发明内容
本公开提供了一种发光器件，包括：第一电极；第一发光层，其位于所述第一电极的一侧；N-CGL层，其位于所述第一发光层远离所述第一电极的一侧；P-CGL层，其位于所述N-CGL层远离所述第一发光层的一侧；第二发光层，其位于所述P-CGL层远离所述N-CGL层的一侧；以及第二电极，其位于所述第二发光层远离所述P-CGL层的一侧，其中，所述N-CGL层的主体材料的最低未占分子轨道能级低于或等于-2.9，玻璃化温度大于130℃。
可选地，所述N-CGL层的客体材料的掺杂浓度在0.8％-1.2％范围内。
可选地，所述N-CGL层的客体材料的掺杂浓度为1％。
可选地，所述客体材料包括Yb、Cs、Li中的任意一种。
可选地，所述N-CGL层的厚度在100埃-250埃之间。
可选地，所述N-CGL层的主体材料包括选自以下通式的电子传输材料：
其中，R1、R2、R3、R4分别独立地选自H、F、Cl、Br、烷基、芳基、以及杂烷基、杂芳基中的任意一种。
可选地，所述P-CGL层包括P掺杂材料。
可选地，所述P掺杂材料选自如下通式的轴烯化合物、四氰二甲基对苯醌、四氟四氰二甲基对苯醌中的任意一种：
其中，R1选自芳基和杂芳基中的任意一种。
可选地，所述P-CGL层还包括主体材料，所述P-CGL层的主体材料选自三苯胺类和联苯类的空穴传输材料中的任意一种；所述P掺杂材料作为客体材料，其质量浓度小于5％。
可选地，所述P-CGL层的厚度在50埃-120埃之间。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，并非对本公开的限制。
图1为根据本公开的实施例的一种发光器件的结构示意图；
图2为根据本公开的实施例的不同N-CGL host材料与不同浓度PD材料的高温实验对比图；以及
图3为根据本公开的实施例的不同N-CGL host材料与不同浓度PD材料的高温实验对比图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。
本公开提供了一种发光器件，如图1所示为根据本公开的一个实施例的发光器件的结构示意图。如图1所示，该发光器件包括：第一电极11、第一发光层12、N-CGL(N-chargegeneration layer,N-电荷产生)层13、P-CGL(P-charge generation layer,P-电荷产生)层14、第二发光层15和第二电极16。其中，第一发光层12位于所述第一电极11的一侧。N-CGL层13位于所述第一发光层12远离所述第一电极11的一侧。P-CGL层14位于所述N-CGL层13远离所述第一发光层12的一侧。第二发光层15位于所述P-CGL层14远离所述N-CGL层13的一侧。第二电极16位于所述第二发光层15远离所述P-CGL层14的一侧。在本公开中，所述N-CGL层13的材料包括主体(host)材料和客体材料。所述N-CGL层的host材料的最低未占分子轨道(LUMO)能级低于或等于-2.9，玻璃化温度大于130℃。该结构可以有效改善叠层器件的高温信赖性。
如图1所示，该发光器件可为叠层有机电致发光显示器件。第一电极11可以为叠层有机电致发光显示器件的阳极，第二电极16可以为叠层有机电致发光显示器件的阴极。第一发光层12和第二发光层15可以均包括有机发光功能层，例如依次层叠设置的空穴传输层、发光层和电子传输层。并且，空穴传输层靠近有机电致发光显示器件的阳极的一侧，电子传输层靠近叠层有机电致发光显示器件的阴极的一侧。发光层位于空穴传输层和电子传输层之间。
可选地，N-CGL层的客体材料可以为注入金属材料，例如，Yb(镱)，还可以为其它金属或金属化合物，例如Cs(铯)、Li(锂)等。并且，可选地，所述N-CGL层的客体材料的掺杂浓度在0.8％-1.2％范围内。在一个具体示例中，所述客体材料的掺杂浓度为1％，厚度在100埃-250埃之间。其中，本文中的厚度表示沿垂直于第一电极或第二电极方向上的尺寸。
可选地，N-CGL层的host材料包括选自以下通式的电子传输材料：
R1、R2、R3、R4为取代基，取代基可分别独立地选自H、F、Cl、Br、烷基、芳基、以及杂烷基、杂芳基中的任意一种。N-CGL host材料的选择性示例如下：
可选地，P-CGL层可以为单一材料膜层，即P-CGL层仅由一种材料制成，例如由P掺杂材料(PD掺杂材料)制成。
可选地，所述P-CGL层的PD材料选自如下通式的轴烯化合物或四氰二甲基对苯醌(TCNQ)或四氟四氰二甲基对苯醌(F4TCNQ)：
其中，R1为取代基，取代基可以为芳基和杂芳基中的任意一种。
PD材料的示例如下：
可选地，P-CGL层可以为混合材料膜层，即P-CGL层由至少两种材料制成，例如所述P-CGL层包括主体(host)材料和客体材料。所述P-CGL层的host材料选自三苯胺类和联苯类的空穴传输材料中的任意一种。P掺杂材料作为客体材料，其质量浓度可小于等于5％。
P-CGL host材料的示例如下：
可选地，P-CGL层的厚度在50埃-120埃之间。
以下以ITO(Indium tin oxide，氧化铟锡)/发光部件1/N-CGL(200)/P-CGL(100)/发光部件2/Al(1000)为例来对本公开进行说明。其中，P-CGL:NPB:x％PD-1，x表示浓度值；N-CGL:N-CGL host:1％Yb；PD-1浓度分别为3％、4％、5％，7％，10％；N-CGL host分别为上述：A、B、C、D、E，如下表1-表3所示，其对应的高温实验对比图如图2-图3所示。
表1：
材料 A B C D E
LUMO 2.66 2.7 2.9 2.96 2.95
Tg 120 146 145 161 132
表2：
表3：
其中，表1示出了上述A、B、C、D、E这五种N-CGL host材料的对应的LUMO能级和Tg(玻璃化)温度。表2和表3示出了不同N-CGL host及不同PD浓度的组合实验示例。图2和图3示出了上述组合示例的测试过程中，随着PD浓度下降，本公开的发光器件随时间前后工作时电压的差值较小，从而实现在保持其他性能基本一致的情况下减轻EL器件在高温中的电压上升现象，有效的提升了器件在高温条件下的工作性能。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (8)

1.一种发光器件，包括：
第一电极；
第一发光层，其位于所述第一电极的一侧；
N-CGL层，其位于所述第一发光层远离所述第一电极的一侧；
P-CGL层，其位于所述N-CGL层远离所述第一发光层的一侧；
第二发光层，其位于所述P-CGL层远离所述N-CGL层的一侧；以及
第二电极，其位于所述第二发光层远离所述P-CGL层的一侧，
其中，所述N-CGL层的主体材料的最低未占分子轨道能级低于或等于-2.9，玻璃化温度大于130℃；
所述N-CGL层的客体材料的掺杂浓度在0.8％-1.2％范围内；以及
所述N-CGL层的厚度在100埃-250埃之间。
2.根据权利要求1所述的发光器件，其中，所述N-CGL层的客体材料的掺杂浓度为1％。
3.根据权利要求2所述的发光器件，其中，所述客体材料包括Yb、Cs、Li中的任意一种。
4.根据权利要求1所述的发光器件，其中，所述N-CGL层的主体材料包括选自以下通式的电子传输材料：
其中，R1、R2、R3、R4分别独立地选自H、F、Cl、Br、烷基、芳基、以及杂烷基、杂芳基中的任意一种。
5.根据权利要求1-4中任一项所述的发光器件，其中，所述P-CGL层包括P掺杂材料。
6.根据权利要求5所述的发光器件，其中，所述P掺杂材料选自如下通式的轴烯化合物、四氰二甲基对苯醌、四氟四氰二甲基对苯醌中的任意一种：
其中，R1选自芳基和杂芳基中的任意一种。
7.根据权利要求6所述的发光器件，其中，所述P-CGL层还包括主体材料，所述P-CGL层的主体材料选自三苯胺类和联苯类的空穴传输材料中的任意一种；所述P掺杂材料作为客体材料，其质量浓度小于等于5％。
8.根据权利要求7所述的发光器件，其中，所述P-CGL层的厚度在50埃-120埃之间。
CN202010911623.XA 2020-09-02 2020-09-02 发光器件 Active CN111987236B (zh)

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