CN111987222A - Solar cell based on double perovskite material and preparation method - Google Patents
Solar cell based on double perovskite material and preparation method Download PDFInfo
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Abstract
The invention discloses a perovskite solar cell taking a double perovskite material as an absorption layer. The double-perovskite solar cell comprises a transparent conductive substrate, an electron transport layer, a double-perovskite absorption layer, a hole transport layer and a metal electrode from bottom to top. The double perovskite has a molecular formula of A2BⅠBⅢX6Wherein A is K+、Rb+、Cs+One or more of, BⅠIs Cu+、Ag+、Au+、Li+、Na+、K+、Rb+、Cs+、In+One or more of, BⅢIs As3+、Bi3+、Rh3+、Sb3+、Cr3+、Co3+、Ga3+、Fe3+、Ru3+、In3+、Ir3+、Au3+、Y3+One or more of (a). Compared with the existing perovskite solar cell, the perovskite solar cell has high stability and no toxic elements, and can be used for communication and traffic photovoltaic systems and user solar energy.
Description
Technical Field
The invention belongs to the technical field of electronic devices, and further relates to a perovskite solar cell which can be used for communication photovoltaic systems, traffic photovoltaic systems and user solar power supplies.
Background
As a novel solar cell, the perovskite solar cell can be processed by a solution method and can be combined with a printing process, so that the production cost is greatly saved. Meanwhile, the perovskite solar cell also has the characteristics of lightness and thinness, and can be deposited on a flexible substrate. Traditional perovskite materials MAPbI3The photoelectric material has excellent photoelectric performance, the forbidden band width is 1.55-1.6eV, the light absorption range is wide, the migration distance of a carrier is long, the exciton binding energy is low, and the photoelectric material has bipolarity, can absorb light energy to generate a photon-generated electron hole pair, can play a role in transmitting the carrier, and can transmit electrons and holes. These advantages facilitate the absorption of light and the transport and migration of photogenerated carriers, thus making it a widely studied material. In recent years, the photoelectric conversion efficiency, the preparation method and the device structure of the perovskite solar cell are remarkably improved, and the perovskite solar cell structurally comprises a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, a hole transport layer and a metal electrode. However, the common problems of organic-inorganic hybrid perovskite solar cells are poor water stability and air stability and environmental problems caused by the toxic element lead.
New energy science and technology (changchun) limited in application No.: 201811469181.7 best practiceThe patent application discloses a method for preparing perovskite solar cells. The method adopts ITO as a transparent conductive substrate, and adopts a spin coating method to prepare Spiro-OMeTAD (2,2 ', 7, 7' -tetra [ N, N-di (4-methoxyphenyl) amino)]-9, 9' -spirobifluorene)) as a hole transport layer, a perovskite absorption layer is prepared by adopting a one-step method or a two-step method, and a large-area SnO is prepared by adopting a spraying method2As the electron transport layer, the metal electrode is prepared by adopting an evaporation method, the realization efficiency reaches 17.68 percent, and the large-area production is facilitated. But the method employs CH3NH2PbI3The light absorption layer prepared by the material has poor stability in air due to the organic group, and contains toxic element lead, so that the performance of the perovskite solar cell is limited and the perovskite solar cell can be widely applied to life.
Shuangli photoelectric technology limited, Zhenjiang city, under the application number: 201410824806.2 discloses a method of making a tin-based perovskite solar cell. The method adopts TCO as an anode and adopts a spin-coating method to prepare TiO2As the electron transport layer, Spiro-OMeTAD (2,2 ', 7, 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino group) was prepared by spin coating]-9, 9' -spirobifluorene)) as a hole transport layer, preparing a tin perovskite absorption layer by adopting a one-step method, and preparing a metallic silver electrode by adopting an evaporation method. The preparation method utilizes tin to replace lead element in the traditional lead perovskite, and greatly reduces the toxicity and pollution of the solar cell. However, the tin element is in the traditional ABX3The ABX is expressed as +2 valence in the structure and is very easy to be oxidized into +4 valence3The tin-based perovskite with the structure is extremely unstable, so that the stability of the solar cell has a great problem.
Disclosure of Invention
The invention aims to provide a solar cell taking double perovskites as an absorption layer and a preparation method thereof aiming at the existing defects, so as to improve the stability of the solar cell in the air, reduce toxic lead elements in the perovskites and expand the application range of the solar cell.
The technical scheme of the invention is realized as follows:
1. a solar cell based on double perovskite materials comprises a transparent conductive substrate, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer and a metal electrode from bottom to top, and is characterized in that the perovskite light absorption layer is made of double perovskite materials without toxic lead elements, so that the stability of the solar cell is improved.
Further, the double perovskite material is A2BⅠBⅢX6Structure, A is a monovalent cation, BⅠIs a monovalent metal cation, BⅢIs a trivalent metal cation, wherein the monovalent cation A adopts K+、Rb+、Cs+Any one kind of ion and any combination of several kinds of ions; monovalent metal cation BⅠUsing Cu+、Ag+、Au+、Li+、Na+、K+、Rb+、Cs+、In+Any one kind of ion and any combination of several kinds of ions; trivalent metal cation BⅢUsing As3+、Bi3+、Rh3+、Sb3+、Cr3+、Co3+、Ga3+、Fe3 +、Ru3+、In3+、Ir3+、Au3+、Y3+Any one kind of ion and any combination of several kinds of ions; the monovalent halogen anion X is Cl-、Br-、I-Any one kind of ion and any combination of several kinds of ions.
Further, the transparent conductive substrate is made of Indium Tin Oxide (ITO) or fluorine-doped tin oxide (FTO).
A perovskite solar cell preparation method taking a double perovskite material as an absorption layer is characterized by comprising the following steps:
1) selecting a transparent conductive substrate, and carrying out pretreatment:
2) spin-coating the precursor solution of the electron transport layer on the pretreated substrate by adopting a spin-coating method, and then annealing the spin-coated substrate to obtain the prepared electron transport layer;
3) preparing a double perovskite solution:
one-step spin coating solution: mixing AX powder and BⅠX powderPowder, BⅢX3The powder was prepared according to the following formula 2: 1: 1 is dissolved in one or more organic solutions of dimethyl sulfoxide DMSO, gamma-butyrolactone GBL and isopropanol IPA and stirred in a hot bench to form the double perovskite A2BⅠBⅢX6Solution for one-step spin coating;
two-step spin coating solution: firstly, B isⅠX powder, BⅢX3The powder is prepared by the following steps of 1: dissolving the mixture in dimethyl formamide DMF organic solution in the proportion of 1 to obtain BⅠX、BⅢX3Dissolving AX powder in one or more organic solutions of dimethyl sulfoxide (DMSO) and gamma-butyrolactone (GBL) Isopropanol (IPA) to obtain an AX precursor solution; the B isⅠX、BⅢX3The precursor solution of (2) and the precursor solution of AX are used for spin coating by a two-step method;
4) coating a solution corresponding to the solution on the prepared electron transport layer by adopting a one-step method or a two-step method, and annealing the spin-coated device to obtain a prepared perovskite absorption layer;
5) depositing the hole transport layer solution on the prepared perovskite absorption layer by adopting a spin-coating method to obtain a hole transport layer;
6) and (3) evaporating the metal electrode on the hole transport layer by using a vacuum coating instrument to obtain the prepared metal electrode, thereby completing the preparation of the perovskite solar cell.
Compared with the prior art, the invention has the following advantages because the double perovskite material is adopted as the absorption layer of the perovskite solar cell:
first, the toxic elements in traditional lead perovskite are reduced or eliminated. The invention can effectively reduce or eliminate the toxicity of the perovskite by partially or completely replacing lead element with nontoxic metal element, so that the double perovskite is more beneficial to commercial production and large-area use.
Second, stability of the solar cell is improved. The invention uses the double perovskite structure formed by all inorganic ions, and has better stability than organic and inorganic hybrid perovskites.
And thirdly, the light absorption coefficients of the solar cell in a visible light long wave region and an infrared region are improved, and the photoelectric response of the perovskite thin film is favorably improved.
Drawings
Fig. 1 is a structural view of a perovskite solar cell of the present invention.
Fig. 2 is a flow chart of the present invention for fabricating a perovskite solar cell.
Detailed Description
Embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
Referring to fig. 1, the perovskite solar cell of the present invention includes, in order from bottom to top, a transparent conductive substrate 1, a hole transport layer 2, a perovskite light absorption layer 3, an electron transport layer 4, and a metal electrode 5. Wherein:
the transparent conductive substrate 1 is made of Indium Tin Oxide (ITO) or fluorine-doped tin oxide (FTO) material, and the thickness of the transparent conductive substrate is 200-900 nm;
the precursor solution of the electron transport layer 2 adopts titanium dioxide TiO2Solution, tin dioxide SnO2Solution, zinc oxide ZnO solution, C60 solution, [6,6 ]]-any one of a PCBM solution of phenyl C61 methyl butyrate with a thickness of 50-500 nm;
the perovskite light absorption layer 3 is made of a double perovskite material and has a structure A2BⅠBⅢX6Wherein A is a monovalent cation, BⅠIs a monovalent metal cation, BⅢIs a trivalent metal cation, wherein the monovalent cation A adopts K+、Rb+、Cs+Any one kind of ion and any combination of several kinds of ions; monovalent metal cation BⅠUsing Cu+、Ag+、Au+、Li+、Na+、K+、Rb+、Cs+、In+Any one kind of ion and any combination of several kinds of ions; trivalent metal cation BⅢUsing As3+、Bi3+、Rh3+、Sb3+、Cr3 +、Co3+、Ga3+、Fe3+、Ru3+、In3+、Ir3+、Au3+、Y3+Any one kind of ion and any combination of several kinds of ions; the monovalent halogen anion X is Cl-、Br-、I-Any one ion and any combination of several ions, the thickness of the ion is 100-500 nm;
the precursor solution of the hole transport layer 4 adopts any one of triphenylamine derivative solution, 2,7, 7-tetra [ N, N-di (4-methoxyphenyl) amino ] -9, 9-spirobifluorene Spiro-OMeTAD, poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate PEDOT, PSS solution, poly (3-hexylthiophene) P3HT solution, cuprous thiocyanate CuSCN solution and nickel oxide NiO solution, and the thickness of the precursor solution is 50-500 nm;
the metal electrode 5 is any one of gold Au, silver Ag, copper Cu and carbon electrode, and the thickness of the metal electrode is 100-300 nm.
Referring to fig. 2, the method of the present invention for preparing a perovskite solar cell using a double perovskite material as a light absorption layer is given as follows.
Example 1: the transparent conductive substrate is made of Indium Tin Oxide (ITO), and the electron transport layer is made of [6,6 ]]-phenyl radical C61PCBM, and Cs for perovskite light absorption layer2AgInBr6The hole transport layer adopts 3, 4-ethylenedioxythiophene, polystyrene sulfonate PEDOT, PSS, and the top metal electrode adopts a silver Ag perovskite solar cell.
Step 1, selecting a transparent conductive substrate ITO and preprocessing the transparent conductive substrate ITO.
1.1) selecting an Indium Tin Oxide (ITO) transparent material as a conductive substrate;
1.2) ultrasonically cleaning a transparent conductive substrate by using a Decon-90 glass cleaning solution, deionized water, acetone and an isopropanol solution at the temperature of 50 ℃ for 20 minutes respectively;
1.3) drying the glass surface of the ultrasonically cleaned transparent conductive substrate by using nitrogen, and treating for 30 minutes by using ultraviolet ozone UV-zone to obtain a pretreated substrate;
and step 2, preparing an electron transport layer.
2.1) taking 20mg of [6,6 ]]-phenyl radical C61Butyric acid methyl esterPCBM was dissolved in 1ml of chlorobenzene, and the solution was stirred on a magnetic stirrer for 8 hours to dissolve the PCBM sufficiently, thereby obtaining a PCBM solution.
2.2) spin-coating the PCBM solution on the pretreated substrate by using a spin coater, wherein the spin-coating speed is 2000rpm, and the spin-coating time is 42s, so as to obtain the electron transport layer.
And 3, preparing a perovskite solution.
3.1) 1mL of the mixture was taken in the form of dimethyl sulfoxide DMSO, [ gamma ] -butyrolactone GBL ═ 3: 7, dissolving 213mg of cesium bromide CsBr in the mixed solvent prepared according to the volume ratio to obtain a cesium bromide CsBr solution;
3.2) to the cesium bromide CsBr solution were added 93.9mg of silver bromide AgBr and 177mg of indium bromide InBr3Heating and stirring at 75 deg.C until completely dissolved to obtain Cs2AgInBr6And (3) solution.
And 4, preparing the perovskite absorption layer by adopting a one-step method.
The prepared Cs2AgInBr6Placing the solution on a hot table, heating to 65 ℃, and spin-coating the solution on the prepared electron transmission layer by using spin coater equipment at the rotating speed of 1000rpm for 10 s; and spin-coating at 3000rpm for 30s, and annealing at 280 deg.C for 10min to obtain the perovskite absorption layer.
And 5, preparing a hole transport layer.
And (3) taking filtered 3, 4-ethylenedioxythiophene, polystyrene sulfonate PEDOT and PSS, spin-coating the filtered 3, 4-ethylenedioxythiophene and the polystyrene sulfonate PEDOT and PSS on the prepared perovskite absorption layer by using a spin coater, wherein the spin-coating speed is 7000rpm, the spin-coating time is 45s, then placing the perovskite absorption layer on a hot bench for annealing, and the annealing temperature is 150 ℃ and the annealing time is 15min to obtain the hole transport layer.
And 6, preparing a top metal electrode.
Under the condition of vacuum degree of the chamber being 10-5Pa is below so that
The silver Ag is evaporated on the prepared hole transport layer to obtain an Ag metal electrode with the thickness of 100nmAnd finishing the preparation of the perovskite solar cell.
Example 2: the transparent conductive substrate is prepared by fluorine-doped tin oxide (FTO), and the electron transport layer is prepared by titanium dioxide (TiO)2The perovskite light absorption layer adopts Cs2AgBiBrxI6-xThe hole transport layer adopts 2,2,7, 7-tetra [ N, N-di (4-methoxyphenyl) amino]9, 9-spirobifluorene (spiro-OMeTAD), and the top metal electrode adopts a gold Au perovskite solar cell.
Step 1, selecting a transparent conductive substrate FTO and pretreating the FTO.
1a) Selecting a fluorine-doped tin oxide (FTO) transparent material as a conductive substrate;
1b) pretreating a conductive substrate
The specific implementation of this step is the same as 1.1) and 1.2) of example 1.
Step 2, preparing TiO2An electron transport layer.
2a) 0.2mol/L of titanium dioxide TiO2The solution is spin-coated on a fluorine-doped tin oxide FTO substrate for 45s at the speed of 4000rpm, and then annealing is carried out for 5min at the temperature of 125 ℃;
2b) 0.4mol/L of titanium dioxide TiO2The solution was spin coated on the substrate obtained in 2a) at 4000rpm for 45s, followed by annealing at a temperature of 125 ℃ for 5min,
2c) after repeating the step 2b) twice, annealing the obtained substrate at 450 ℃ for 15 min;
2d) after the substrate obtained in 2c) had cooled to room temperature, it was immersed in 40mmol/L titanium TiCl chloride at a temperature of 70 deg.C4Soaking in water solution for 45min, and annealing at 450 deg.C for 20min to obtain electron transport layer.
Step 3, electron transport layer TiO2Surface passivation of
10mg of [6,6 ]]-phenyl radical C61Butyric acid methyl ester PC61BM was dissolved in 1mL of chlorobenzene to give PC61And (3) carrying out spin coating on the BM solution at the speed of 6000rpm for 45s above the prepared electron transport layer, and then annealing at the temperature of 100 ℃ for 5min to obtain the passivated electron transport layer.
And 4, preparing a perovskite solution.
4a) Mix 1.36M of BiI30.24M BiBr3And 1.6M AgBr powder in 20. mu.L dimethylformamide DMF and stirred at 75 ℃ for 2 hours to give BiX3And AgBr;
4b) and dissolving 100mg of CsI in 1mL of mixed solvent of DMSO and GBL, wherein the volume ratio of the DMSO to the GBL is 3: 7, obtaining a CsI solution;
step 5, preparing the perovskite layer by adopting a two-step process
5a) Firstly, adopting a spin coater to obtain BiX3And the mixed solution of AgBr is spin-coated on the passivated electron transport layer for 45s at the speed of 3000rpm to obtain BiX3And a mixed film of AgBr;
5b) secondly, spin-coating the CsI solution on the BiX with spin coater at 3000rpm3And 45s on the AgBr mixed film; and then annealing for 8min at the temperature of 280 ℃ to obtain the perovskite absorption layer.
And 6, preparing a hole transport layer.
6a) Dissolving 170mg of lithium bis (trifluoromethane sulfonyl) imide Li-TFSI powder in 1mL of acetonitrile solution to obtain a Li-TFSI solution; dissolving 1.014g of tert-butylpyridine tBP powder in 1mL of acetonitrile solution to obtain a tBP solution; dissolving 11.27g of Co (III) complex FK209 powder in 1mL of acetonitrile solution to obtain a Co (III) complex FK209 solution;
6b) dissolving 90mg of Spiro-OMeTAD powder, 45 μ L of Li-TFSI solution, 10 μ L of tBP solution and 75 μ L of Co (III) complex FK209 solution in 1mL of chlorobenzene together to obtain 2,2,7, 7-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9, 9-spirobifluorene Spiro-OMeTAD solution;
6c) and spin-coating the prepared Spiro-OMeTAD solution on the perovskite absorption layer for 45s at the speed of 4000rpm by adopting a spin coater device to obtain the hole transport layer.
And 7, preparing a top layer metal electrode.
Under the condition of vacuum degree of the chamber being 10-5Pa is below so that
And (3) evaporating Au on the prepared hole transport layer to obtain an Au metal electrode with the thickness of 150nm, thereby completing the preparation of the perovskite solar cell.
Example 3: the transparent conductive substrate is prepared by doping tin oxide FTO with fluorine, and the electron transmission layer is prepared by tin dioxide SnO2The perovskite light absorption layer adopts Cs2InSbBr6The hole transport layer adopts cuprous thiocyanate CuSCN, and the top metal electrode adopts a copper Cu perovskite solar cell.
And step A, selecting a transparent conductive substrate FTO and pretreating the FTO.
The specific implementation of this step is the same as in step 1 of example 2.
Step B, preparing SnO of the perovskite solar cell2An electron transport layer.
B1) 1mL of tin dioxide SnO with the concentration of 15 percent2The solution is dissolved in 2mL of deionized water to obtain tin dioxide SnO with the concentration of 5 percent2A solution;
B2) SnO with the concentration of 5%2The solution was spin-coated on the pretreated FTO substrate at 5000rpm for 30 seconds, and then annealed at 150 ℃ for 30min to obtain an electron transport layer.
And step C, preparing a perovskite solution.
C1) 1.0M InBr powder and 1.0M SbBr3The powder was dissolved in 20. mu.L of dimethylformamide DMF and stirred at 75 ℃ for 2 hours to give InBr and SbBr3The mixed solution of (1);
C2) and dissolving 100mg of CsBr powder in 1mL of mixed solvent of dimethyl sulfoxide DMSO and gamma-butyrolactone GBL, wherein the volume ratio of DMSO to GBL is 3: 7, obtaining CsBr solution;
step D, preparing the perovskite layer by adopting a two-step process
D1) Step one, adopting a spin coater to mix InBr and SbBr obtained from C1)3The mixed solution is spin-coated on the prepared electron transport layer for 30s at the speed of 2000rpm to obtain InBr and SbBr3The mixed film of (1);
D2) second, C2) to obtain CsBrSolution spin coating at 3500rpm in prepared InBr and SbBr3And (3) mixing the thin film for 30s, and then annealing for 10min at the temperature of 280 ℃ to obtain the perovskite absorption layer.
And E, preparing a hole transport layer.
E1) Dissolving 35mg of cuprous thiocyanide CuSCN powder with the purity of 99% in 1mL of diethyl sulfide with the purity of 98%, and stirring at constant temperature for 30min at room temperature to obtain a cuprous thiocyanide CuSCN solution;
E2) and spin-coating the obtained cuprous thiocyanide CuSCN solution on the prepared perovskite absorption layer for 30s at the speed of 5000rpm by adopting a spin coater device to obtain a hole transport layer.
And F, preparing a top layer metal electrode.
Under the condition of vacuum degree of the chamber being 10-5Pa is below so that
And (3) evaporating Cu on the prepared hole transport layer to obtain a metal Cu electrode with the thickness of 150nm, thereby completing the preparation of the perovskite solar cell.
The foregoing description is only three specific examples of the present invention and is not intended to limit the invention in any way, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principles and structures of the invention, after understanding the principles of the present invention. For example, in addition to the materials used in the above three examples, the electron transport layer further includes a zinc oxide ZnO solution, C60A solution; perovskite solution A2BⅠBⅢX6In, further comprising that A is K+、Rb+Any one of them or a combination of several ions, BⅠIs Ag+、Au+、Li+、Na+、K+、Rb+、Cs+One or more of BⅢIs As3 +、Rh3+、Cr3+、Co3+、Ga3+、Fe3+、Ru3+、Ir3+、Au3+、Y3+Any one of or combination of several ions in the above-mentioned formula, X also includes Cl-(ii) a The hole transport layer also comprises triphenylamine derivative solution, poly (3-hexylthiophene) P3HT solution and nickel oxide NiO solution; the metal electrode further includes a carbon electrode. The solution coating method used comprises a one-step method and a two-step method in three embodiments, and further comprises a blade coating method, a slit coating method and an ultrasonic spraying method, wherein the solutions required by the three methods are the same as the solutions used in the one-step method in the embodiments, and only the parameters comprising ink injection speed, coating speed and coating time need to be set when the three methods are specifically implemented, wherein the ultrasonic spraying method also needs to further set ultrasonic power and a distance between a spray head and a substrate. Such modifications and variations that are based on the idea of the invention are still within the scope of the claims of the invention.
Claims (10)
1. The solar cell based on the double perovskite material comprises a transparent conductive substrate (1), an electron transmission layer (2), a perovskite light absorption layer (3), a hole transmission layer (4) and a metal electrode (5) from bottom to top, and is characterized in that the perovskite light absorption layer (3) is made of the double perovskite material without toxic lead elements, so that the stability of the solar cell is improved.
2. The solar cell of claim 1, wherein the double perovskite material is a2BⅠBⅢX6Structure, A is a monovalent cation, BⅠIs a monovalent metal cation, BⅢIs a trivalent metal cation, wherein the monovalent cation A adopts K+、Rb+、Cs+Any one kind of ion and any combination of several kinds of ions; monovalent metal cation BⅠUsing Cu+、Ag+、Au+、Li+、Na+、K+、Rb+、Cs+、In+Any one kind of ion and any combination of several kinds of ions; trivalent metal cation BⅢUsing As3+、Bi3+、Rh3+、Sb3+、Cr3+、Co3+、Ga3+、Fe3+、Ru3+、In3+、Ir3+、Au3+、Y3+Any one kind of ion and any combination of several kinds of ions; the monovalent halogen anion X is Cl-、Br-、I-Any one kind of ion and any combination of several kinds of ions.
3. Solar cell according to claim 1, characterized in that the transparent conductive substrate (1) is made of Indium Tin Oxide (ITO) or fluorine doped tin oxide (FTO) material.
4. A preparation method of a perovskite solar cell taking a double perovskite material as an absorption layer is characterized by comprising the following steps:
1) selecting a transparent conductive substrate, and carrying out pretreatment:
2) spin-coating the precursor solution of the electron transport layer on the pretreated substrate by adopting a spin-coating method, and then annealing the spin-coated substrate to obtain the prepared electron transport layer;
3) preparing a double perovskite solution:
one-step spin coating solution: mixing AX powder and BⅠX powder, BⅢX3The powder was prepared according to the following formula 2: 1: 1 is dissolved in one or more organic solutions of dimethyl sulfoxide DMSO, gamma-butyrolactone GBL and isopropanol IPA and stirred in a hot bench to form the double perovskite A2BⅠBⅢX6Solution for one-step spin coating;
two-step spin coating solution: firstly, B isⅠX powder, BⅢX3The powder is prepared by the following steps of 1: dissolving the mixture in dimethyl formamide DMF organic solution in the proportion of 1 to obtain BⅠX、BⅢX3Dissolving AX powder in one or more organic solutions of dimethyl sulfoxide (DMSO) and gamma-butyrolactone (GBL) Isopropanol (IPA) to obtain an AX precursor solution; the B isⅠX、BⅢX3The precursor solution of (2) and the precursor solution of AX are used for spin coating by a two-step method;
4) coating a solution corresponding to the solution on the prepared electron transport layer by adopting a one-step method or a two-step method, and annealing the spin-coated device to obtain a prepared perovskite absorption layer;
5) depositing the hole transport layer solution on the prepared perovskite absorption layer by adopting a spin-coating method to obtain a hole transport layer;
6) and (3) evaporating the metal electrode on the hole transport layer by using a vacuum coating instrument to obtain the prepared metal electrode, thereby completing the preparation of the perovskite solar cell.
5. The method of claim 4, wherein the pretreatment of the selected transparent conductive substrate in 1) is carried out as follows:
1.1) carrying out ultrasonic cleaning on a selected transparent conductive substrate by using a Decon-90 glass cleaning solution, deionized water, acetone and an isopropanol solution in sequence at the temperature of 50 ℃ for 20 minutes respectively;
1.2) drying the glass surface of the ultrasonically cleaned transparent conductive substrate by nitrogen, and treating for 30 minutes by using ultraviolet ozone UV-zone to obtain a pretreated substrate.
6. The method according to claim 4, wherein the precursor solution of the electron transport layer used in 2) is titanium dioxide TiO2Solution, tin dioxide SnO2Solution, zinc oxide ZnO solution, C60Solution, [6,6 ]]-phenyl radical C61Any one of methyl butyrate PCBM solution.
7. The method according to claim 4, wherein 5) the hole transport layer solution is any one of triphenylamine derivative solution, 2,7, 7-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9, 9-spirobifluorene Spiro-OMeTAD, poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate PEDOT, PSS solution, poly (3-hexylthiophene) P3HT solution, cuprous thiocyanate, CuSCN solution, and nickel oxide NiO solution.
8. The method of claim 4, wherein the metal electrode in 6) is any one of Au, Ag, Cu, and C.
9. The method according to claim 4, wherein the spin coating method used in 2) is performed at a rotation speed of 1000-5000rpm, an annealing temperature of 100-200 ℃ and an annealing time of 5-30 min.
10. The method according to claim 4, wherein the solution coating method used in 3) is performed at a rotation speed of 1000 to 5000rpm, an annealing temperature of 100 to 200 ℃, and an annealing time of 10 to 30 min.
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