CN111987221A - Solar cell based on vacancy perovskite material and preparation method - Google Patents
Solar cell based on vacancy perovskite material and preparation method Download PDFInfo
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Abstract
The invention discloses a perovskite solar cell taking a vacancy perovskite as a perovskite light absorption layer, and mainly solves the problems of toxicity, poor stability and insufficient light absorption coefficient of the conventional perovskite light absorption layer. The device comprises a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, a hole transport layer and a metal electrode from bottom to top. Wherein the perovskite light absorption layer is composed of cation A, cation B, anion X and anion Y and has a chemical formula of A2BXmY6‑mWherein A is one or more of potassium, rubidium or cesium, B is one or more of molybdenum, tungsten, titanium, zirconium, hafnium, germanium, tin, iridium, platinum, palladium and gold, X, Y is chlorine, bromine or iodine, and m is 1-6. The invention eliminates the toxicity of perovskite light absorption layer, improves the light absorption coefficient and improves the photoelectric conversionThe energy and the stability can be realized, and the photoelectric conversion device can be used for photoelectric conversion in the fields of photovoltaic transformer stations, artificial satellites, household solar energy and the like.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and further relates to a solar cell which can be used for photoelectric conversion in the fields of photovoltaic transformer stations, artificial satellites, household solar energy and the like.
Background
As a novel solar cell, the perovskite solar cell can be processed by a solution method and can be combined with a printing process, so that the production cost is greatly saved. Meanwhile, the perovskite solar cell has the characteristics of lightness and thinness and can be deposited on a flexible substrate. In recent years, the photoelectric conversion efficiency, the preparation method and the device structure of the perovskite solar cell are remarkably improved, and the perovskite solar cell comprises a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, a hole transport layer and a metal electrode from bottom to top. However, the perovskite absorption layer applied to the solar cell still has the problems of toxicity, low light absorption efficiency and poor stability.
The university of south and middle school discloses a perovskite solar cell in the patent document "perovskite solar cell" applied by the university of south and middle school (application number: 201711145073.X application publication number: CN 107910444A). The perovskite solar cell adopts inorganic materials selenium and tellurium to be applied to a hole transport layer of the perovskite solar cell to replace organic hole transport materials, so that the manufacturing cost of a device can be reduced, the stability of the device can be improved, the carrier transport capacity can be improved, and better device performance can be obtained. However, this method employs PbI2、PbBr2、PbCl2、SnI2、SnBr2Or SnCl2The material is used as one of compounds for preparing a perovskite light absorption layer, so that the light absorption layer is poor in stability and has Pb toxicity, and the performance of a device is influenced.
Patent document filed by university of Changzhou at the university of Changzhou' a perovskite solar cell moduleA method for manufacturing a perovskite solar cell module is disclosed in application No. 201810314934.0 application publication No. CN 108389975A. According to the method, the stainless steel wire is used for shielding FTO, the titanium oxide or tin oxide film is prepared by thermal spraying, and the isolation wire formed after the steel wire is removed is utilized, so that the problem of effective series connection among perovskite solar cells is solved, and the implementation efficiency is high. However, this method employs CsxFA1-xPbI3The perovskite thin film is used as a perovskite light absorption layer, so that the light absorption layer is poor in stability and contains Pb toxicity, and further application of the device is influenced.
Disclosure of Invention
The invention aims to provide a solar cell based on a vacancy perovskite material and a preparation method thereof, aiming at the existing defects, so as to reduce the toxicity of a perovskite light absorption layer, improve the light absorption efficiency and improve the photoelectric response and stability of a device.
The technical scheme of the invention is realized as follows:
1. a solar cell based on vacancy perovskite material comprises a transparent conductive substrate, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer and a metal electrode from bottom to top, and is characterized in that the perovskite light absorption layer is made of vacancy perovskite material and used for eliminating the toxicity of the perovskite light absorption layer, improving the light absorption coefficient and the light absorption efficiency, and improving the chemical stability of the light absorption layer so as to improve the photoelectric response, the stability and the environmental protection degree of a device;
furthermore, the vacancy perovskite is formed by selecting a chemical formula A consisting of a cation A, a cation B, an anion X and an anion Y2BXmY6-mWherein A is one or more of potassium, rubidium or cesium, B is one or more of molybdenum, tungsten, titanium, zirconium, hafnium, germanium, tin, iridium, platinum, palladium and gold, X, Y is chlorine, bromine or iodine, and m is 1-6.
Further, the transparent conductive substrate is made of Indium Tin Oxide (ITO) or fluorine-doped tin oxide (FTO) material, and the thickness of the transparent conductive substrate is 300-800 nm;
further, the electron transport layer adopts titanium dioxide TiO2Zinc oxide ZnO, tin dioxide SnO2、C60、[6,6]-phenyl radical C61Any one of methyl butyrate PCBM, the thickness of which is 70-350 nm;
further, the thickness of the vacancy perovskite light absorption layer is 150-550 nm;
further, the hole transport layer adopts 2,2 ', 7, 7' -tetra [ N, N-di (4-methoxyphenyl) amino]-9, 9' -spirobifluorene Spiro-OMeTAD, triphenylamine derivatives, polyethylenedioxythiophene- (polyvinylsulfonate) PEDOT: PSS, poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine]PTAA, poly-3 hexylthiophene P3HT, cuprous thiocyanate CuSCN, nickel oxide NiO and cuprous oxide Cu2O, the thickness of which is 50-500 nm.
Furthermore, the metal electrode adopts any one of gold Au, silver Ag, copper Cu and carbon electrode, and the thickness of the metal electrode is 90-300 nm.
2. A preparation method of a perovskite solar cell based on vacancy perovskite as a light absorption layer is characterized by comprising the following steps:
1) sequentially carrying out ultrasonic cleaning on the transparent conductive substrate at the temperature of 50 ℃ by using glass cleaning liquid, deionized water, acetone, isopropanol solution and deionized water, blow-drying the glass surface of the transparent conductive substrate subjected to ultrasonic cleaning by using nitrogen, and treating the glass surface by using ultraviolet ozone to obtain a pretreated substrate;
2) spin-coating the precursor solution of the electron transport layer on the pretreated transparent conductive substrate by using a spin-coating method to obtain the electron transport layer;
3) preparing a vacancy perovskite solution A according to the balanced stoichiometric ratio2BXmY6-m：
3a) Selecting two halide powders containing A cations and B cations, configuring the required vacancy perovskite material according to the molar ratio of 2:1, and enabling the halogen content of the required halide to meet the relation of m:6-m to obtain the vacancy perovskite powder;
3b) adding one or more of dimethyl sulfoxide DMSO, gamma-butyrolactone GBL, dimethylformamide DMF and isopropanol IPA solvent into the vacancy perovskite powder to prepare the required vacancy perovskite solution A2BXmY6-mStirring the solution by using a hot table until the solute is completely dissolved;
4) adopting a solution coating method to coat the vacancy perovskite solution A2BXmY6-mCoating the sample piece on the prepared electron transmission layer, and annealing the sample piece after spin coating to obtain a perovskite absorption layer;
5) spin-coating the hole transport layer precursor solution on the prepared perovskite absorption layer by adopting a spin-coating method to obtain a hole transport layer;
6) and (4) evaporating a metal electrode on the hole transport layer by using a vacuum coating instrument to finish the preparation of the perovskite solar cell.
Compared with the prior art, the perovskite light absorption layer of the perovskite solar cell adopts the novel vacancy perovskite, and has the following advantages:
firstly, the chemical stability of the perovskite material is improved, the oxidation of Sn ions from two to four is prevented, the stability and the preparation feasibility of the perovskite material are enhanced, and the stability and the service life of a device are improved.
Secondly, by introducing the element containing the d orbit, the light absorption capacity of the perovskite material is improved, the absorption capacity of the material to visible light and infrared light is enhanced, and the photoelectric response of the device is improved.
And thirdly, the environmental protection degree of the solar cell is improved, the introduction of Pb element is avoided, the toxicity of Pb in the perovskite light absorption layer is eliminated, and the device is non-toxic and environment-friendly.
Drawings
Fig. 1 is a structural view of a perovskite solar cell of the present invention.
Fig. 2 is a flow chart of the preparation of the perovskite solar cell of the present invention.
Detailed Description
The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
Referring to fig. 1, the perovskite solar cell structure of the present invention includes a transparent conductive substrate 1, an electron transport layer 2, a perovskite light absorption layer 3, a hole transport layer 4, and a metal electrode 5. Wherein:
the transparent conductive substrate 1 is made of an Indium Tin Oxide (ITO) material or a fluorine-doped tin oxide (FTO) material with the thickness of 300-800 nm.
The electron transmission layer 2 is positioned on the transparent conductive substrate 1 and adopts titanium dioxide TiO2Zinc oxide ZnO, tin dioxide SnO2、C60、[6,6]-phenyl radical C61And (3) any one of methyl butyrate PCBM, and the thickness of the methyl butyrate PCBM is 70-350 nm.
The perovskite light absorption layer 3 is positioned on the electron transmission layer 2 and adopts perovskite material A with the thickness of 150-550nm2BXmY6-mThe cation A, the cation B, the anion X and the anion Y form a chemical formula A2BXmY6-mWherein A is one or more of potassium, rubidium or cesium, B is one or more of molybdenum, tungsten, titanium, zirconium, hafnium, germanium, tin, iridium, platinum, palladium and gold, X, Y is chlorine, bromine or iodine, and m is 1-6;
the hole transport layer 4 is positioned on the perovskite light absorption layer 3 and adopts 2,2 ', 7, 7' -tetra [ N, N-di (4-methoxyphenyl) amino]-9, 9' -spirobifluorene Spiro-OMeTAD, triphenylamine derivatives, polyethylenedioxythiophene- (polyvinylsulfonate) PEDOT: PSS, poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine]PTAA, poly-3 hexylthiophene P3HT, cuprous thiocyanate CuSCN, nickel oxide NiO and cuprous oxide Cu2And any one of O with the thickness of 50-500 nm.
The metal electrode 5 is positioned on the hole transport layer 4, and is made of any one of gold Au, silver Ag, copper Cu and carbon electrodes, and the thickness of the metal electrode is 90-300 nm.
Referring to fig. 2, the process of the present invention for making a perovskite solar cell having a novel vacancy perovskite as the perovskite light absorbing layer is given in the following three examples.
Example 1: the transparent conductive substrate is made of Indium Tin Oxide (ITO), and the electron transport layer is made of [6,6 ]]-phenyl radical C61PCBM, the perovskite light absorption layer adopts Cs2SnI6The hole transport layer adopts Spiro-OMeTAD, and the top metal electrode adopts a silver Ag perovskite solar cell.
Step one, selecting a transparent conductive substrate and pretreating the transparent conductive substrate.
1.1) selecting ITO with the thickness of 400nm as a transparent conductive substrate;
1.2) carrying out ultrasonic cleaning on the selected substrate for 20min by sequentially using glass cleaning liquid, deionized water, acetone, isopropanol solution and deionized water at the temperature of 50 ℃;
1.3) drying the glass surface of the substrate cleaned by ultrasonic by using nitrogen, and irradiating the glass surface by using ultraviolet ozone for 20 minutes to obtain the pretreated transparent conductive substrate.
And step two, preparing an electron transport layer of the perovskite solar cell.
In a glove box, 20mg of [6,6 ]]-phenyl radical C61Dissolving methyl butyrate PCBM in 1mL chlorobenzene, stirring for 8 hours by using a magnetic stirring table to fully dissolve the methyl butyrate PCBM, uniformly dropwise adding the solution onto a substrate by using a spin coater, and spin-coating at 2000rpm for 45s to obtain a prepared electron transport layer with the thickness of 170 nm.
And step three, preparing the perovskite absorption layer.
3.1) preparing a perovskite precursor solution: according to the following dimethylsulfoxide DMSO: γ -butyrolactone GBL ═ 3: 7, carrying out gentle shaking to fully mix, and dissolving 351mg of cesium iodide CsI in the 1mL of mixed solvent to obtain a cesium iodide CsI solution;
3.2) adding 423mg of SnI iodide into the solution4Mixing, heating at 75 deg.C under stirring to dissolve completely to obtain Cs2SnI6And (3) solution.
3.3) preparing the prepared Cs2SnI6The solution is placed on a hot table and heated to the temperature of 60 ℃, and two times of spin coating are carried out by utilizing the spin coater equipment and adopting a one-step method, namely the Cs is spin-coated on the prepared electron transmission layer at the rotating speed of 1000rpm2SnI6And (3) spin-coating the solution for 20s at the rotation speed of 4000rpm, and then annealing at the temperature of 100 ℃ for 20min to obtain the 350nm thick perovskite absorption layer.
And step four, preparing a hole transport layer.
4.1) adding a lithium bis (trifluoromethylsulfonyl) imide Li-TFSI material at a concentration of 520mg/ml, a tris (2- (1H-pyrazol-1-yl) -4-tert-butylpyridinium) -cobalt (III) tris (bis (trifluoromethylsulfonyl)) FK209 material at a concentration of 100mg/ml, and 2,2 ', 7,7 ' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9 ' -spirobifluorene Spiro-OMeTAD and tert-butylpyridinium tBP material to 1ml of chlorobenzene to give a Spiro-OMeTAD solution in which the weight of Spiro-OMeTAD is 90mg, the volume of Li-TFSI is 18. mu.L, the volume of FK209 is 29. mu.L and the volume of tBP is 29. mu.L;
4.2) spin-coating a Spiro-OMeTAD solution on the prepared perovskite absorption layer for 30s at the rotating speed of 4000rpms by adopting a spin coater device to obtain a hole transport layer with the thickness of 150 nm.
And step five, preparing a top layer metal electrode.
Under the condition of vacuum degree of the chamber being 10-5Pa is below so that
And (3) evaporating Ag on the prepared hole transport layer to obtain a metal electrode with the thickness of 100nm, and finishing the preparation of the perovskite solar cell.
Example 2: the transparent conductive substrate is prepared by adopting Indium Tin Oxide (ITO), the electron transmission layer ZnO and the perovskite light absorption layer Cs2TiI6-xClxThe hole transport layer adopts cuprous thiocyanate CuSCN, and the top metal electrode adopts a Cu perovskite solar cell.
The specific implementation of this step is the same as the first step of example 1.
And 2, preparing an electron transport layer of the perovskite solar cell.
2.1) adding 2.95g of zinc acetate powder into 125mL of methanol solution, immediately heating to 70 ℃, and continuously stirring to obtain transparent liquid A;
2.2) dissolving 1.48g of potassium hydroxide powder in 65mL of methanol solution at 70 ℃, and continuously stirring to obtain a mixed solution B;
2.3) dropwise adding the mixed solution B into the transparent solution A while stirring, then stirring for 2h, standing to cool to room temperature, removing supernatant, cleaning the precipitate with methanol, adding 70mL of n-butyl alcohol, 5mL of methanol and 5mL of chloroform into the precipitate, stirring at constant speed, and filtering to obtain a zinc oxide nanoparticle solution;
and 2.4) spin-coating the zinc oxide nano particle solution on the pretreated transparent conductive substrate ITO for 30s at the rotating speed of 3000rmp, and repeating the spin-coating for three times to obtain a prepared electron transmission layer with the thickness of 170 nm.
And 3, preparing a perovskite absorption layer of the perovskite solar cell.
3.1) 1.36M of TiI4And 0.24M TiCl4Dissolved in 20. mu.L DMF and stirred at 75 ℃ for 2 hours to give TiX4Precursor solution;
3.2) dissolve 130mg CsI in 1mL IPA, add another 10 μ L DMF to get CsI solution;
3.3) through a two-step method, firstly adopting a spin coater device to spin TiX on the prepared electron transmission layer at the rotating speed of 3000rpm4Precursor solution for 35s to obtain TiX4A film; then adopting a spin coater to prepare the TiX at the rotating speed of 3000rpm4Spin-coating CsI solution on the film for 35 s;
3.4) annealing at the temperature of 100 ℃ for 20min to obtain a perovskite absorption layer with the thickness of 440 nm.
And 4, preparing a hole transport layer.
4.1) dissolving a CuSCN material with the concentration of 99% in diethyl sulfide with the concentration of 98%, and stirring for 30 minutes at room temperature to obtain a CuSCN solution, wherein the weight of CuSCN is 35mg, and the volume of diethyl sulfide is 1 mL;
and 4.2) spin-coating 35 mu L of CuSCN solution on the prepared perovskite absorption layer for 30s at the rotating speed of 5000rpm by adopting spin coater equipment to obtain a hole transport layer with the thickness of 200 nm.
And 5, preparing a top layer metal electrode.
Under the condition of vacuum degree of the chamber being 10-5Pa is below so that
Rate ofAnd evaporating Cu on the prepared hole transport layer to obtain a metal electrode with the thickness of 110nm, thereby completing the preparation of the perovskite solar cell.
Example 3: FTO is adopted for preparing the transparent conductive substrate, and [6,6 ] is adopted for the electron transmission layer]-phenyl radical C61PCBM, and Cs for perovskite light absorption layer2ZrI6The hole transport layer adopts poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine]PTAA, perovskite solar cell with Au as top metal electrode.
And step A, selecting a transparent conductive substrate and pretreating the transparent conductive substrate.
A1) Selecting FTO with the thickness of 400nm as a transparent conductive substrate;
A2) pre-treating the selected substrate:
the pretreatment in this step was carried out in the same manner as in 1.2) to 1.3) of example 1.
And B, preparing an electron transport layer.
In a glove box 20mg of [6,6 ]]-phenyl radical C61Methyl butyrate PCBM is dissolved in 1mL chlorobenzene, stirred for 8 hours by a magnetic stirring table to be fully dissolved, and spin-coated by a spin coater at the rotating speed of 2000rpm for 45s to obtain a prepared electron transport layer with the thickness of 180 nm.
And step C, preparing the perovskite absorption layer.
C1) 1.6M ZrI4Dissolved in 20. mu.L dimethylformamide DMF and stirred at 75 ℃ for 2 hours to give ZrI4Precursor solution; dissolving 100mg of CsI powder in 1mL of isopropanol IPA, and adding 10 mu L of dimethyl formamide DMF to obtain a CsI precursor solution;
C2) the prepared electron transmission layer is spin-coated with ZrI at 2000rpm by a two-step method using a spin coater4Precursor solution 40s to obtain ZrI4A film; then the prepared ZrI is processed at the rotating speed of 3500rpm4Spin-coating CsI solution 40s on the film;
C3) annealing at 100 deg.C for 10min to obtain 450nm thick perovskite absorption layer.
And D, preparing a hole transport layer.
D1) Dissolving 2mg of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] PTAA in 1ml of toluene to obtain a solution of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] PTAA;
D2) spin-coating poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] PTAA solution on the prepared perovskite absorption layer for 30s at the rotating speed of 3000rpm by adopting spin coater equipment, and then annealing at the temperature of 90 ℃ for 30min to obtain a hole transport layer with the thickness of 160 nm.
And E, preparing a top metal electrode.
Under the condition of vacuum degree of the chamber being 10-5Pa is below so that
And (3) evaporating Au on the prepared hole transport layer to obtain a metal electrode with the thickness of 150nm, thereby completing the preparation of the perovskite solar cell.
The foregoing description is only three specific examples of the present invention and is not intended to limit the invention in any way, and it will be apparent to those skilled in the art that, having the benefit of the teachings of the present invention, various modifications and variations are possible in form and detail without departing from the principles and structures of the invention, the electron transport layer comprising, in addition to the materials used in the three examples described above, titanium dioxide, TiO2SnO, tin dioxide2、C60(ii) a Perovskite solution A2BXmY6-mAlso comprises A is one or more of rubidium or potassium, B is one or more of molybdenum, tungsten, hafnium, germanium, iridium, platinum, palladium and gold, X, Y also comprises bromine, and m is 1-6; the hole transport layer further comprises triphenylamine derivatives, polyethylenedioxythiophene- (polyvinylsulfonate) PEDOT: PSS, poly-3 hexyl thiophene P3HT, nickel oxide NiO and cuprous oxide Cu2O; the metal electrode comprises carbon. In addition to the solution coating methods used in the above three examples, the methods also include a blade coating method, a slit coating method and an ultrasonic spraying method, the solutions required by the three methods are the same as the solution used in the one-step method in the examples, the coating speed and the coating length need to be further set, and the ultrasonic spraying method also needs to be further provided with ultrasonic power, so that the perovskite can be realizedAnd (4) preparing a light absorption layer. Such modifications and variations that are based on the idea of the invention are still within the scope of the claims of the invention.
Claims (10)
1. The perovskite solar cell based on the vacancy perovskite as the light absorption layer comprises a transparent conductive substrate (1), an electron transmission layer (2), a perovskite light absorption layer (3), a hole transmission layer (4) and a metal electrode (5) from bottom to top.
2. The solar cell of claim 1, wherein the vacancy perovskite is selected from the group consisting of cation A, cation B, anion X and anion Y having a chemical formula A2BXmY6-mWherein A is one or more of potassium, rubidium or cesium, B is one or more of molybdenum, tungsten, titanium, zirconium, hafnium, germanium, tin, iridium, platinum, palladium and gold, X, Y is chlorine, bromine or iodine, and m is 1-6.
3. The solar cell according to claim 1, wherein the transparent conductive substrate (1) is made of ITO or FTO material with a thickness of 300-800 nm.
4. The solar cell of claim 1, wherein: the electron transport layer (2) adopts titanium dioxide TiO2Zinc oxide ZnO, tin dioxide SnO2、C60、[6,6]-phenyl radical C61The thickness of any one of the methyl butyrate PCBM is 70-350 nm.
5. The solar cell of claim 1, wherein: the thickness of the vacancy perovskite light absorption layer (3) is 150-550 nm.
6. Root of herbaceous plantThe solar cell of claim 1, wherein: the hole transport layer (4) adopts 2,2 ', 7, 7' -tetra [ N, N-di (4-methoxyphenyl) amino]-9, 9' -spirobifluorene Spiro-OMeTAD, triphenylamine derivatives, polyethylenedioxythiophene- (polyvinylsulfonate) PEDOTPSS, poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine]PTAA, poly-3 hexylthiophene P3HT, cuprous thiocyanate CuSCN, nickel oxide NiO and cuprous oxide Cu2O, the thickness of which is 50-500 nm.
7. The solar cell of claim 1, wherein: the metal electrode (5) adopts any one of gold Au, silver Ag, copper Cu and carbon electrode, and the thickness of the metal electrode is 90-300 nm.
8. A preparation method of a perovskite solar cell based on vacancy perovskite as a light absorption layer is characterized by comprising the following steps:
1) sequentially carrying out ultrasonic cleaning on the transparent conductive substrate at the temperature of 50 ℃ by using glass cleaning liquid, deionized water, acetone, isopropanol solution and deionized water, blow-drying the glass surface of the transparent conductive substrate subjected to ultrasonic cleaning by using nitrogen, and treating the glass surface by using ultraviolet ozone to obtain a pretreated substrate;
2) spin-coating the precursor solution of the electron transport layer on the pretreated transparent conductive substrate by using a spin-coating method to obtain the electron transport layer;
3) preparing a vacancy perovskite solution A according to the balanced stoichiometric ratio2BXmY6-m：
3a) Selecting two halide powders containing A cations and B cations, configuring the required vacancy perovskite material according to the molar ratio of 2:1, and enabling the halogen content of the required halide to meet the relation of m:6-m to obtain the vacancy perovskite powder;
3b) adding one or more of dimethyl sulfoxide DMSO, gamma-butyrolactone GBL, dimethylformamide DMF and isopropanol IPA solvent into the vacancy perovskite powder to prepare the required vacancy perovskite solution A2BXmY6-mStirring the mixture until the mixture is dissolved by using a hot tableCompletely dissolving the materials;
4) adopting a solution coating method to coat the vacancy perovskite solution A2BXmY6-mCoating the sample piece on the prepared electron transmission layer, and annealing the sample piece after spin coating to obtain a perovskite absorption layer;
5) spin-coating the hole transport layer precursor solution on the prepared perovskite absorption layer by adopting a spin-coating method to obtain a hole transport layer;
6) and (4) evaporating a metal electrode on the hole transport layer by using a vacuum coating instrument to finish the preparation of the perovskite solar cell.
9. The method as claimed in claim 8, wherein the cleaning time of each step in 1) is 20min and the UV ozone treatment is 20 min.
10. The method according to claim 8, wherein the solution coating method in 4) employs any one of a one-step spin coating method, a two-step spin coating method, a blade coating method, a slit coating method, and an ultrasonic spray coating method.
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|---|---|---|---|---|
| CN112582550A (en) * | 2020-12-07 | 2021-03-30 | 上海黎元新能源科技有限公司 | Perovskite solar cell based on polymer functional layer and preparation method thereof |
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| WO2022161117A1 (en) * | 2021-01-26 | 2022-08-04 | 浙江大学 | Germanium-based perovskite photoelectric material, application thereof and preparation method therefore, and device and manufacturing method therefor |
| CN114156412A (en) * | 2021-12-08 | 2022-03-08 | 重庆大学 | Application of potassium salt containing large-size strong coordination organic anion in perovskite solar cell |
| CN114156412B (en) * | 2021-12-08 | 2023-04-07 | 重庆大学 | Application of potassium salt containing large-size strong coordination organic anion in perovskite solar cell |
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