CN111987089A - Reverse conducting IGBT power integrated module - Google Patents

Reverse conducting IGBT power integrated module Download PDF

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Publication number
CN111987089A
CN111987089A CN202010837962.8A CN202010837962A CN111987089A CN 111987089 A CN111987089 A CN 111987089A CN 202010837962 A CN202010837962 A CN 202010837962A CN 111987089 A CN111987089 A CN 111987089A
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Prior art keywords
igbt
frd
reverse conducting
devices
chip
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CN202010837962.8A
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Chinese (zh)
Inventor
尚敬
肖强
朱利恒
罗海辉
覃荣震
刘鹏飞
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Zhuzhou CRRC Times Semiconductor Co Ltd
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Zhuzhou CRRC Times Semiconductor Co Ltd
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Priority to CN202010837962.8A priority Critical patent/CN111987089A/en
Publication of CN111987089A publication Critical patent/CN111987089A/en
Priority to PCT/CN2021/113322 priority patent/WO2022037622A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The utility model provides a reverse-conducting IGBT power integrated module, which comprises a lining board and a reverse-conducting IGBT chip arranged on the lining board; the lining plate comprises an emitter conducting layer and a collector conducting layer; the reverse conducting IGBT chip comprises a terminal area, a plurality of IGBT devices and a plurality of FRD devices; the total area of the IGBT device is 50-90% of the area of the reverse conducting type IGBT chip, an emitting electrode PAD area of the IGBT device and an anode PAD area of the FRD device are connected with the emitting electrode conducting layer through a binding line, and a collecting electrode PAD area of the IGBT device and a cathode PAD area of the FRD device are connected with the collecting electrode conducting layer through a welding layer. A plurality of IGBT devices and FRD devices are integrated on one chip to form a reverse conducting type IGBT chip, so that the IGBT devices and the FRD devices share a terminal area of the chip, and the current capacity of the lining plate is improved.

Description

Reverse conducting IGBT power integrated module
Technical Field
The disclosure relates to the technical field of semiconductor devices, in particular to a reverse conducting IGBT power integration module.
Background
Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a Bipolar Transistor and a metal oxide semiconductor field effect Transistor, and is widely used in the industrial fields such as industry, 4C (communications, computers, consumer electronics, automotive electronics), and home appliances as a core semiconductor device for weak current control of strong current. In general, in the application of the IGBT, a Fast Recovery Diode (FRD) with a corresponding specification needs to be connected in anti-parallel as a current leakage loop when being turned off, and the FRD is used in cooperation with the current leakage loop to play a role in afterflow protection of the IGBT chip.
However, since the current capability of a single IGBT chip is small, in order to obtain sufficient power capacity, a plurality of IGBT chips are connected in parallel. Typically, this parallel connection is achieved in two steps, where a portion of the chips are first connected in parallel to the substrate and then connected in parallel via the substrate to form a module. The structure of a conventional IGBT power integrated module is shown in fig. 1, and includes: the integrated circuit includes a substrate 101, 4 IGBT chips 102, and 2 FRD chips 103, wherein the substrate 101 includes an insulating layer 1011, a collector conductive layer 1012, an emitter conductive layer 1013, and a gate conductive layer 1014, the IGBT chip 102 includes a terminal region 1021, an emitter PAD region 1022, a gate PAD region 1023, and a collector PAD region 1024, and the FRD chip 103 includes a terminal region 1031, an anode PAD region 1032, and a cathode PAD region 1033. The structure connects four IGBT chips in parallel by means of parallel connection of the lining plates. However, the way of realizing parallel connection of chips by using the substrate has some problems, mainly each chip has a terminal region and a gate PAD region, which results in waste of the flow area of the chip, and in order to consider the chip mounting process, the space exists between the chips, which also wastes the flow area of the substrate.
Disclosure of Invention
To the above problem, the present disclosure provides a reverse conducting type IGBT power integration module, which solves the technical problem that the current integration mode results in the waste of the flow area of the chip and the lining board.
In a first aspect, the present disclosure provides a reverse conducting IGBT power integration module, including a substrate and a reverse conducting IGBT chip disposed on the substrate;
the lining plate comprises an emitter conducting layer and a collector conducting layer;
the reverse conducting IGBT chip comprises a terminal area, a plurality of IGBT devices and a plurality of FRD devices;
the total area of the IGBT device is 50-90% of the area of the reverse conducting type IGBT chip, an emitting electrode PAD area of the IGBT device and an anode PAD area of the FRD device are connected with the emitting electrode conducting layer through a binding line, and a collecting electrode PAD area of the IGBT device and a cathode PAD area of the FRD device are connected with the collecting electrode conducting layer through a welding layer.
According to the embodiment of the present disclosure, preferably, the number of the reverse conducting IGBT chips is 2.
According to the embodiment of the present disclosure, preferably, in each of the reverse conducting IGBT chips, the number of the IGBT devices is 1, and the number of the FRD devices is 1;
in each reverse conducting IGBT chip, the IGBT device is isolated from the FRD device through a first isolation region;
wherein the width of the first isolation region is 2 to 3 times of the thickness of the IGBT chip.
According to the embodiment of the present disclosure, preferably, in each of the reverse conducting IGBT chips, the number of the IGBT devices is greater than or equal to 2, and the number of the IGBT devices is 1 more than the number of the FRD devices;
in each reverse conducting IGBT chip, the IGBT devices and the FRD devices are longitudinally and alternately arranged or transversely and alternately arranged.
According to the embodiment of the present disclosure, preferably, the IGBT device includes a plurality of IGBT cells, and the FRD device includes a plurality of FRD cells;
the number of the IGBT units in each IGBT device is the same as that of the FRD units in each FRD device, and the side length of the IGBT units and the side length of the FRD units are 10-100 um.
According to the embodiment of the present disclosure, preferably, the number of the reverse conducting IGBT chips is 1.
According to the embodiment of the present disclosure, preferably, the number of the IGBT devices is greater than or equal to 2, and the number of the IGBT devices is 1 more than the number of the FRD devices;
the IGBT devices and the FRD devices are longitudinally and alternately arranged or transversely and alternately arranged.
According to the embodiment of the present disclosure, preferably, the IGBT device includes a plurality of IGBT cells, and the FRD device includes a plurality of FRD cells;
wherein the number of the IGBT units in each IGBT device is the same as the number of the FRD units in each FRD device.
According to the embodiment of the present disclosure, preferably, the reverse conducting IGBT chip further includes a second isolation region to divide the reverse conducting IGBT chip into two parts;
the second isolation region is a gate wiring region or a scribing channel.
According to the embodiment of the present disclosure, preferably, the reverse conducting IGBT chip further includes a third isolation region and a fourth isolation region that are perpendicularly crossed with each other to divide the reverse conducting IGBT chip into four parts;
the third isolation region and the fourth isolation region are gate wiring regions or scribing channels.
According to the embodiment of the present disclosure, preferably, in each section of the reverse conducting IGBT chip, the number of IGBT devices is greater than or equal to 2, and the number of IGBT devices is 1 more than the number of FRD devices;
in each part of the reverse conducting type IGBT chip, the IGBT devices and the FRD devices are longitudinally and alternately arranged or transversely and alternately arranged.
According to the embodiment of the present disclosure, preferably, the IGBT device includes a plurality of IGBT cells, and the FRD device includes a plurality of FRD cells;
wherein the number of the IGBT units in each IGBT device is the same as the number of the FRD units in each FRD device.
According to the embodiment of the present disclosure, each portion of the reverse conducting IGBT chip preferably corresponds to one gate PAD region, so as to enhance the uniform distribution of gate signals.
By adopting the technical scheme, the following technical effects can be at least achieved:
the utility model provides a reverse-conducting IGBT power integrated module, which comprises a lining board and a reverse-conducting IGBT chip arranged on the lining board; the lining plate comprises an emitter conducting layer and a collector conducting layer; the reverse conducting IGBT chip comprises a terminal area, a plurality of IGBT devices and a plurality of FRD devices; the total area of the IGBT device is 50-90% of the area of the reverse conducting type IGBT chip, an emitting electrode PAD area of the IGBT device and an anode PAD area of the FRD device are connected with the emitting electrode conducting layer through a binding line, and a collecting electrode PAD area of the IGBT device and a cathode PAD area of the FRD device are connected with the collecting electrode conducting layer through a welding layer. A plurality of IGBT devices and a plurality of FRD devices are integrated on a chip to form a reverse conducting type IGBT chip, so that the IGBT devices and the FRD devices share the terminal area of the chip, the total terminal area and the total chip spacing area of the chip are reduced, and the through-current capacity of the lining plate is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a schematic structural diagram of a conventional IGBT power integration module;
fig. 2 is a schematic structural diagram of a reverse conducting IGBT power integration module according to an exemplary embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another reverse conducting IGBT power integration module according to an exemplary embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another reverse conducting IGBT power integration module shown in an exemplary embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of another reverse conducting IGBT power integration module shown in an exemplary embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of another reverse conducting IGBT power integration module shown in an exemplary embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of another reverse conducting IGBT power integration module shown in an exemplary embodiment of the present disclosure;
in the drawings, wherein like parts are designated with like reference numerals, the drawings are not necessarily to scale;
101-a lining plate; 102-IGBT chip; 103-FRD chip; 1011-an insulating layer; 1012-collector conductive layer; 1013-an emitter conductive layer; 1014-a gate conductive layer; 1021-a terminal region of the IGBT chip; 1022-an emitter PAD region of the IGBT chip; 1023-a gate PAD area of the IGBT chip; a PAD region of a collector of the 1024-IGBT chip; 1031-terminal region of FRD chip; 1032-anode PAD region of FRD chip; 1033-a cathode PAD region of the IGBT chip; 201-lining board; 202-reverse conducting type IGBT chip; 2011-insulating layer; 2012-a collector conductive layer; 2013-an emitter conductive layer; 2014-a gate conductive layer; 2021-a termination region; 2022-IGBT devices; 2023-FRD devices; 2024-a first isolation region; 301-a liner plate; 302-reverse conducting type IGBT chip; 3011-an insulating layer; 3012-a collector conductive layer; 3013-an emitter conductive layer; 3014-a gate conductive layer; 3021-terminal area; 3022-IGBT devices; 3023-FRD device; 401-lining board; 402-reverse conducting type IGBT chip; 4011-an insulating layer; 4012-a collector conductive layer; 4013-emitter conductive layer; 4014-a gate conductive layer; 4021-terminal area; 4022-IGBT device; 4023-FRD device; 501-lining board; 502-reverse conducting type IGBT chip; 5011-insulating layer; 5012-a collector conductive layer; 5013-an emitter conductive layer; 5014-gate conductive layer; 5021-terminal area; 5022-IGBT device; 5023-FRD device; 601-lining board; 602-reverse conducting type IGBT chip; 6011-an insulating layer; 6012-a collector conductive layer; 6013-an emitter conductive layer; 6014-a gate conductive layer; 6021-terminal region; 6022-IGBT devices; 6023-FRD device; 6024-a second isolation region; 6025-third isolation region; 6026-fourth isolation region.
Detailed Description
Embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, so that how to apply technical means to solve technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and the features of the embodiments of the present disclosure can be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure.
It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present disclosure, a detailed structure will be set forth in the following description in order to explain the technical solutions proposed by the present disclosure. The following detailed description of the preferred embodiments of the present disclosure, however, the present disclosure may have other embodiments in addition to these detailed descriptions.
Example one
As shown in fig. 2, the present embodiment provides an IGBT power integrated module including a substrate 201 and a reverse conducting IGBT chip 202 disposed on the substrate 201.
Liner 201 includes insulating layer 2011, collector conductive layer 2012, emitter conductive layer 2013 and gate conductive layer 2014, wherein collector conductive layer 2012, emitter conductive layer 2013 and gate conductive layer 2014 are spaced apart to achieve insulation therebetween.
The number of the reverse conducting IGBT chips 202 is 2, the two reverse conducting IGBT chips 202 are respectively located on both sides of the substrate 201, and the reverse conducting IGBT chip 202 includes a termination region 2021, an IGBT device 2022, an FRD device 2023, and a first isolation region 2024.
IGBT device 2022 includes an emitter PAD region (not shown) disposed on the front surface, a gate PAD region (not shown) and a collector PAD region (not shown) disposed on the back surface thereof. Note that, in one reverse conducting IGBT chip 202, there are two gate PAD regions.
The FRD device 2023 includes an anode PAD region (not labeled) disposed on its front surface and a cathode PAD region (not shown) disposed on its rear surface.
The emitter PAD area and the anode PAD area are connected to the emitter conductive layer 2013 through a bonding line (not shown), the gate PAD area is connected to the gate conductive layer 2014 through a bonding line (not shown), and the collector PAD area and the cathode PAD area are connected to the collector conductive layer 2012 through a solder layer (not shown).
In each reverse conducting IGBT chip 202, the total area of the IGBT devices 2022 is 50% to 90% of the area of the reverse conducting IGBT chip 202.
In this embodiment, each reverse conducting IGBT chip 202 includes one IGBT device 2022 and one FRD device 2023, and the IGBT device 2022 and the FRD device 2023 are isolated from each other by a first isolation region 2024. The first isolation region 2024 and the termination region 2021 have the same structure, the width of the first isolation region 2024 is 2 to 3 times the thickness of the reverse conducting IGBT chip 202, and the emitter PAD region and the anode PAD region may be metal layers that are connected to each other or metal layers that are not connected to each other. According to the reverse conducting type IGBT chip, the IGBT device 2022 and the FRD device 2023 are integrated on the same chip and share the same terminal area, so that the total terminal area and the total chip interval area of the chip are reduced, and the flow area proportion of the reverse conducting type IGBT chip 202 and the flow capacity of a lining plate can be further improved.
The embodiment of the disclosure provides an IGBT power integrated module, which integrates an IGBT device 2022 and an FRD device 2023 on the same chip, and shares the same terminal area, and the IGBT power integrated module can improve the flow area ratio of a reverse conducting IGBT chip 202, and improve the flow capacity of a lining plate.
Example two
As shown in fig. 3, the present embodiment provides another IGBT power integrated module, which includes a substrate 301 and a reverse conducting IGBT chip 302 disposed on the substrate 301.
The liner 301 includes an insulating layer 3011, a collector conductive layer 3012, an emitter conductive layer 3013, and a gate conductive layer 3014, wherein the collector conductive layer 3012, the emitter conductive layer 3013, and the gate conductive layer 3014 are disposed at intervals to achieve insulation therebetween.
The number of the reverse conducting IGBT chips 302 is 2, two reverse conducting IGBT chips 302 are respectively located on both sides of the substrate 301, and the reverse conducting IGBT chip 302 includes a terminal region 3021, an IGBT device 3022, and an FRD device 3023.
IGBT device 3022 includes an emitter PAD region (not shown) disposed on the front surface, a gate PAD region (not shown) and a collector PAD region (not shown) disposed on the back surface thereof. Note that, in a reverse conducting IGBT chip 302, there is a gate PAD region.
FRD device 3023 includes an anode PAD area (not shown) disposed on its front surface and a cathode PAD area (not shown) disposed on its rear surface.
The emitter PAD area and the anode PAD area are connected to the emitter conductive layer 3013 through a bonding wire (not shown), the gate PAD area is connected to the gate conductive layer 3014 through a bonding wire (not shown), and the collector PAD area and the cathode PAD area are connected to the collector conductive layer 3012 through a solder layer (not shown).
In the present embodiment, each reverse conducting IGBT chip 302 includes a plurality of IGBT devices 3022 and a plurality of FRD devices 3023, and in each reverse conducting IGBT chip 302, the number of IGBT devices 3022 is greater than or equal to 2, and the number of IGBT devices 3022 is 1 more than the number of FRD devices 3023. In each reverse conducting IGBT chip 302, the IGBT devices 3022 and the FRD devices 3023 are alternately arranged in the longitudinal direction or alternately arranged in the lateral direction, that is, in each reverse conducting IGBT chip 302, in the direction in which the IGBT devices 3022 and the FRD devices 3023 are alternately arranged, at the edge of the reverse conducting IGBT chip 302 is the IGBT device 3022.
In each reverse conducting IGBT chip 302, the width W1 of each IGBT device 3022 is larger than the thickness of the reverse conducting IGBT chip 302 in the direction in which the IGBT device 3022 and the FRD device 3023 are alternately arranged, so as to avoid the occurrence of the voltage folding back problem. That is, when the IGBT device 3022 and the FRD device 3023 are disposed alternately in the longitudinal direction, the width W1 of the IGBT device 3022 in the longitudinal direction is larger than the thickness of the reverse conducting IGBT chip 302; when the IGBT devices 3022 and the FRD devices 3023 are laterally alternately arranged, the width W1 of the IGBT devices 3022 in the lateral direction is larger than the thickness of the reverse conducting IGBT chip 302.
In this embodiment, the area of each IGBT device 3022 may be uniformly set or may have different area sizes in each reverse conducting IGBT chip 302, as long as the total area of the IGBT devices 3022 in each reverse conducting IGBT chip 302 is 50% to 90% of the area of the reverse conducting IGBT chip 302.
In this embodiment, the PAD area of the emitter of the IGBT device 3022 and the PAD area of the anode of the FRD device 3023 may be the same metal layer.
According to the reverse conducting IGBT chip, the plurality of IGBT devices 3022 and the plurality of FRD devices 3023 are integrated on the same chip and share the same terminal area, so that the total terminal area and the total chip spacing area of the chip are reduced, and the flow area ratio of the reverse conducting IGBT chip 302 and the flow capacity of the lining plate are improved. Moreover, the area of the single IGBT device 3022 and the single FRD device 3023 is reduced, and the IGBT device 3022 and the FRD device 3023 are alternately and periodically arranged, so that the electrothermal distribution is more uniform when the IGBT device 3022 and the FRD device 3023 respectively work.
The embodiment of the present disclosure provides an IGBT power integrated module, which can increase the flow area ratio of the reverse conducting IGBT chip 302 and the flow capacity of the lining board, and reduce the area of a single IGBT device 3022 and a single FRD device 3023, so that when the IGBT device 3022 and the FRD device 3023 work respectively, the electric heat distribution is more uniform.
EXAMPLE III
As shown in fig. 4, on the basis of the second embodiment, the present embodiment provides another IGBT power integrated module, which includes a substrate 401 and a reverse conducting IGBT chip 402 disposed on the substrate 401.
The liner 401 includes an insulating layer 4011, a collector conductive layer 4012, an emitter conductive layer 4013, and a gate conductive layer 4014, wherein the collector conductive layer 4012, the emitter conductive layer 4013, and the gate conductive layer 4014 are spaced apart from each other to insulate them from each other.
The number of the reverse conducting IGBT chips 402 is 2, two reverse conducting IGBT chips 402 are respectively located on both sides of the substrate 401, and the reverse conducting IGBT chips 402 include a terminal region 4021, an IGBT device 4022, and an FRD device 4023.
IGBT device 4022 includes an emitter PAD region (not shown) disposed on the front surface, a gate PAD region (not shown), and a collector PAD region (not shown) disposed on the back surface thereof. Note that, in one reverse conducting IGBT chip 402, there is one gate PAD region.
The FRD device 4023 includes an anode PAD region (not shown) disposed on a front surface thereof and a cathode PAD region (not shown) disposed on a rear surface thereof.
The emitter PAD area and the anode PAD area are connected to the emitter conductive layer 4013 through a bonding line (not shown), the gate PAD area is connected to the gate conductive layer 4014 through a bonding line (not shown), and the collector PAD area and the cathode PAD area are connected to the collector conductive layer 4012 through a solder layer (not shown).
In this embodiment, each reverse conducting IGBT chip 402 includes a plurality of IGBT devices 4022 and a plurality of FRD devices 4023, and in each reverse conducting IGBT chip 402, the number of IGBT devices 4022 is greater than or equal to 2, and the number of IGBT devices 4022 is greater than the number of FRD devices 4023 by 1, and the IGBT devices 4022 and the FRD devices 4023 are arranged alternately in the longitudinal direction or in the lateral direction. That is, in each reverse conducting IGBT chip 402, in the direction in which the IGBT devices 4022 and the FRD devices 4023 are alternately arranged, at the edge of the reverse conducting IGBT chip 402 is the IGBT device 4022.
In each reverse conducting IGBT chip 402, the width W1 of each IGBT device 4022 is larger than the thickness of the reverse conducting IGBT chip 402 in the direction in which the IGBT devices 4022 and the FRD devices 4023 are alternately arranged. That is, when the IGBT devices 4022 and the FRD devices 4023 are arranged alternately in the longitudinal direction, the width W1 of the IGBT devices 4022 in the longitudinal direction is larger than the thickness of the reverse conducting IGBT chip 402; when the IGBT devices 4022 and the FRD devices 4023 are arranged laterally alternately, the width W1 of the IGBT devices 4022 in the lateral direction is larger than the thickness of the reverse conducting IGBT chip 402.
In this embodiment, the area of each IGBT device 4022 may be uniformly set or may have different areas for each reverse conducting IGBT chip 402, as long as the total area of the IGBT devices 4022 in each reverse conducting IGBT chip 402 is 50% to 90% of the area of the reverse conducting IGBT chip 402.
In this embodiment, the PAD area of the emitter of the IGBT device 4022 and the PAD area of the anode of the FRD device 4023 may be the same metal layer.
In this embodiment, each IGBT device 4022 includes a plurality of IGBT cells, and each FRD device 4023 includes a plurality of FRD cells. The geometry of the IGBT cells and FRD cells may be triangular, square, rectangular, circular, and regular polygonal, and the number of IGBT cells in each IGBT device 4022 is the same as the number of FRD cells in each FRD device 4023. That is, in each reverse conducting IGBT chip 402, IGBT cells are present on both sides of each FRD cell in the direction in which the IGBT devices 4022 and FRD devices 4023 are alternately arranged.
In this embodiment, the minimum size of the IGBT unit and the FRD unit is the size of the cross section of the cell of the IGBT device, and is generally 10 to 100 um.
According to the reverse conducting type IGBT chip, the plurality of IGBT devices 4022 and the plurality of FRD devices 4023 are integrated on the same chip and share the same terminal area, so that the total terminal area and the total chip interval area of the chip are reduced, and the flow area proportion of the reverse conducting type IGBT chip 402 and the flow capacity of the lining plate are improved. And IGBT device 4022 and FRD device 4023 are further divided, the area of single IGBT region and single FRD region is reduced, and electric heating distribution is more uniform when IGBT device 4022 and FRD device 4023 work respectively.
The embodiment of the disclosure provides an IGBT power integrated module, this IGBT power integrated module can promote the through-flow area proportion of reverse conducting type IGBT chip 402 and the through-flow capacity of welt, and divide single IGBT device 4022 into a plurality of IGBT units, single FRD device 4023 divides into a plurality of FRD units, further reduce the area in single IGBT region and single FRD region, further make IGBT device 4022 and FRD device 4023 during operation respectively, the electric heat distribution is more even.
Example four
As shown in fig. 5, the present embodiment provides another IGBT power integrated module, which includes a substrate 501 and a reverse conducting IGBT chip 502 disposed on the substrate 501.
The liner plate 501 includes an insulating layer 5011, a collector conductive layer 5012, an emitter conductive layer 5013, and a gate conductive layer 5014, wherein the collector conductive layer 5012, the emitter conductive layer 5013, and the gate conductive layer 5014 are disposed at intervals to achieve insulation from each other.
The number of the reverse conducting type IGBT chips 502 is 1, and two smaller reverse conducting type IGBT chips are further integrated to obtain a single-chip IGBT power integrated module.
The reverse conducting IGBT chip 502 includes a termination region 5021, an IGBT device 5022, and an FRD device 5023.
The IGBT device 5022 includes an emitter PAD region (not shown) disposed on the front surface, a gate PAD region (not shown), and a collector PAD region (not shown) disposed on the back surface thereof. Note that, in a reverse conducting IGBT chip 502, there is a gate PAD region.
The FRD device 5023 includes an anode PAD region (not labeled) disposed on the front surface thereof and a cathode PAD region (not shown) disposed on the rear surface thereof.
The emitter PAD area and the anode PAD area are connected to the emitter conductive layer 5013 through bonding wires (not shown), the gate PAD area is connected to the gate conductive layer 5014 through bonding wires (not shown), and the collector PAD area and the cathode PAD area are connected to the collector conductive layer 5012 through solder layers (not shown).
In this embodiment, the reverse conducting IGBT chip 502 includes a plurality of IGBT devices 5022 and a plurality of FRD devices 5023, and in the reverse conducting IGBT chip 502, the number of the IGBT devices 5022 is greater than or equal to 2, and the number of the IGBT devices 5022 is 1 more than the number of the FRD devices 5023. The IGBT device 5022 and the FRD device 5023 are longitudinally and alternately arranged or transversely and alternately arranged, that is, in each reverse conducting IGBT chip 502, in the direction in which the IGBT device 5022 and the FRD device 5023 are alternately arranged, the IGBT device 5022 is located at the edge of the reverse conducting IGBT chip 502.
In each reverse-conducting IGBT chip 502, the width W1 of each IGBT device 5022 is greater than the thickness of the reverse-conducting IGBT chip 502 in the direction in which the IGBT device 5022 and the FRD device 5023 are alternately arranged. That is, when the IGBT device 5022 and the FRD device 5023 are longitudinally and alternately arranged, the width W1 of the IGBT device 5022 in the longitudinal direction is greater than the thickness of the reverse conducting IGBT chip 502; when the IGBT device 5022 and the FRD device 5023 are laterally alternately disposed, the width W1 of the IGBT device 5022 in the lateral direction is greater than the thickness of the reverse conducting IGBT chip 502.
In this embodiment, the area of each IGBT device 5022 in each reverse conducting IGBT chip 502 may be uniform or may have different areas, as long as the total area of the IGBT devices 5022 in each reverse conducting IGBT chip 502 is 50% to 90% of the area of the reverse conducting IGBT chip 502.
In addition, each IGBT device 5022 includes a number of IGBT cells, and each FRD device 5023 includes a number of FRD cells. The geometric shapes of the IGBT cells and the FRD cells may be triangle, square, rectangle, circle, and regular polygon, and the number of IGBT cells in each IGBT device 5022 is the same as the number of FRD cells in each FRD device 5023. That is, in each reverse conducting IGBT chip 502, IGBT cells are present on both sides of each FRD cell in a direction in which the IGBT device 5022 and the FRD device 5023 are alternately disposed.
In this embodiment, the minimum size of the IGBT unit and the FRD unit is the size of the cross section of the cell of the IGBT device, and is generally 10 to 100 um.
In this embodiment, the PAD area of the emitter of the IGBT device 5022 and the PAD area of the anode of the FRD device 5023 may be the same metal layer.
This kind of reverse conducting type IGBT chip integrates a plurality of IGBT devices 5022 and a plurality of FRD device 5023 on same chip, shares same terminal region 5021, and the area occupied by terminal region 5021 is reduced to the at utmost to the design of this kind of single-chip, and the maximize utilizes welt circulation area. And further divide IGBT device 5022 and FRD device 5023, reduced the area of IGBT unit and FRD unit, further make IGBT device 5022 and FRD device 5023 during operation respectively, the electric heat distributes more evenly.
The embodiment of the disclosure provides an IGBT power integrated module. Due to the design of the single chip, the occupied area of the terminal area 5021 is reduced to the maximum extent, and the flow area of the lining plate is utilized to the maximum extent.
EXAMPLE five
On the basis of the fourth embodiment, the present embodiment provides another IGBT power integrated module, which includes a substrate 601 and a reverse conducting IGBT chip 602 disposed on the substrate 601.
The liner 601 includes an insulating layer 6011, a collector conductive layer 6012, an emitter conductive layer 6013, and a gate conductive layer 6014, wherein the collector conductive layer 6012, the emitter conductive layer 6013, and the gate conductive layer 6014 are disposed at intervals to achieve insulation therebetween.
The number of the reverse conducting type IGBT chips 602 is 1, and two smaller reverse conducting type IGBT chips are further integrated to obtain a single-chip IGBT power integrated module.
As shown in fig. 6, the reverse conducting IGBT chip 602 includes a termination region 6021, an IGBT device 6022, and an FRD device 6023, and a second isolation region 6024 to divide the reverse conducting IGBT chip 602 into two parts. Or as shown in fig. 7, the reverse conducting IGBT chip 602 includes a termination region 6021, an IGBT device 6022, and an FRD device 6023, and a third isolation region 6025 and a fourth isolation region 6026 that perpendicularly intersect with each other to divide the reverse conducting IGBT chip 602 into four parts.
The IGBT device 6022 includes an emitter PAD region (not labeled) disposed on the front surface, a gate PAD region (not labeled) disposed on the back surface, and a collector PAD region (not shown) disposed on the back surface.
The FRD device 6023 includes an anode PAD region (not labeled) disposed on its front surface and a cathode PAD region (not shown) disposed on its rear surface.
The emitter PAD area and the anode PAD area are connected to the emitter conductive layer 6013 through a bonding line (not shown), the gate PAD area is connected to the gate conductive layer 6014 through a bonding line (not shown), and the collector PAD area and the cathode PAD area are connected to the collector conductive layer 6012 through a solder layer (not shown).
In this embodiment, each portion of the reverse conducting IGBT chip 602 corresponds to a gate PAD region, so as to enhance the uniform distribution of the gate signal. As in the structure shown in fig. 6, the number of gate PAD regions is 2; in the structure shown in fig. 7, the number of gate PAD regions is 4.
In the present embodiment, the number of IGBT devices 6022 is greater than or equal to 2 and the number of IGBT devices 6022 is 1 more than the number of FRD devices 6023 in each part of the reverse conducting IGBT chip 602. In each section of the reverse-conducting IGBT chip 602, the IGBT devices 6022 and FRD devices 6023 are alternately arranged in the vertical direction or in the horizontal direction, that is, in each section of the reverse-conducting IGBT chip 602, at the edge of each section of the reverse-conducting IGBT chip 602 in the direction in which the IGBT devices 6022 and FRD devices 6023 are alternately arranged, is the IGBT device 6022.
The width W1 of each IGBT device 6022 is larger than the thickness of the reverse conducting IGBT chip 602 in the direction in which the IGBT devices 6022 and FRD devices 6023 are alternately arranged. That is, when the IGBT devices 6022 and FRD devices 6023 are alternately arranged in the longitudinal direction, the width W1 of the IGBT devices 6022 in the longitudinal direction is larger than the thickness of the reverse conducting IGBT chip 602; when the IGBT devices 6022 and FRD devices 6023 are laterally alternately arranged, the width W1 of the IGBT devices 6022 in the lateral direction is larger than the thickness of the reverse conducting IGBT chip 602.
In this embodiment, the area size of each IGBT device 6022 may be uniform or may have different area sizes in the reverse conducting IGBT chip 602, as long as the total area of the IGBT devices 6022 is 50% to 90% of the area of the reverse conducting IGBT chip 602 in each reverse conducting IGBT chip 602.
In addition, as shown in fig. 6 and 7, each IGBT device 6022 includes several IGBT cells and each FRD device 6023 includes several FRD cells. The geometry of the IGBT cells and FRD cells may be triangular, square, rectangular, circular, and regular polygonal, with the number of IGBT cells in each IGBT device 6022 being the same as the number of FRD cells in each FRD device 6023. That is, in each section of the reverse conducting IGBT chip 602, there are IGBT cells on both sides of each FRD cell in the direction in which the IGBT devices 6022 and FRD devices 6023 are alternately arranged.
In this embodiment, the minimum size of the IGBT unit and the FRD unit is the size of the cross section of the cell of the IGBT device, and is generally 10 to 100 um.
In this embodiment, the emitter PAD region of the IGBT device 6022 and the anode PAD region of the FRD device 6023 may be the same metal layer.
The second isolation region 6024, the third isolation region 6025, and the fourth isolation region 6026 are gate runner regions or scribe lanes. The grid routing can enhance the uniform distribution of grid signals, the scribing process is simple and easy to realize, and the size of a large chip is realized by designing the specific chip size and the special scribing process. Although the scribing channel can not reduce the area of the terminal, the area of the chip space of the chip during the welding of the lining plate can be reduced, and the through-flow capacity of the lining plate is improved.
The reverse conducting IGBT chip avoids the problem of gate signal delay caused by overlarge chip area in the fourth embodiment.
The embodiment of the disclosure provides an IGBT power integration module, which is designed into a single chip, has good liner plate through-current capacity, avoids the problem of gate signal delay, and enhances the distribution uniformity of gate signals of a large-size reverse-conducting IGBT chip.
The above is merely a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, which may be variously modified and varied by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure. Although the embodiments disclosed in the present disclosure are described above, the embodiments are merely used for understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the appended claims.

Claims (13)

1. The reverse conducting type IGBT power integrated module is characterized by comprising a lining plate and a reverse conducting type IGBT chip arranged on the lining plate;
the lining plate comprises an emitter conducting layer and a collector conducting layer;
the reverse conducting IGBT chip comprises a terminal area, a plurality of IGBT devices and a plurality of FRD devices;
the total area of the IGBT device is 50-90% of the area of the reverse conducting type IGBT chip, an emitting electrode PAD area of the IGBT device and an anode PAD area of the FRD device are connected with the emitting electrode conducting layer through a binding line, and a collecting electrode PAD area of the IGBT device and a cathode PAD area of the FRD device are connected with the collecting electrode conducting layer through a welding layer.
2. The reverse conducting IGBT power integration module according to claim 1, wherein the number of the reverse conducting IGBT chips is 2.
3. The reverse conducting IGBT power integrated module according to claim 2,
in each reverse conducting IGBT chip, the number of the IGBT devices is 1, and the number of the FRD devices is 1;
in each reverse conducting IGBT chip, the IGBT device is isolated from the FRD device through a first isolation region;
wherein the width of the first isolation region is 2 to 3 times of the thickness of the IGBT chip.
4. The reverse conducting IGBT power integrated module according to claim 2,
in each reverse conducting IGBT chip, the number of the IGBT devices is greater than or equal to 2, and the number of the IGBT devices is 1 more than that of the FRD devices;
in each reverse conducting IGBT chip, the IGBT devices and the FRD devices are longitudinally and alternately arranged or transversely and alternately arranged.
5. The reverse conducting IGBT power integration module of claim 4, wherein the IGBT device comprises a number of IGBT cells and the FRD device comprises a number of FRD cells;
the number of the IGBT units in each IGBT device is the same as that of the FRD units in each FRD device, and the side length of the IGBT units and the side length of the FRD units are 10-100 um.
6. The reverse conducting IGBT power integration module according to claim 1, wherein the number of the reverse conducting IGBT chips is 1.
7. The reverse conducting IGBT power integrated module according to claim 6,
the number of the IGBT devices is greater than or equal to 2, and the number of the IGBT devices is 1 more than that of the FRD devices;
the IGBT devices and the FRD devices are longitudinally and alternately arranged or transversely and alternately arranged.
8. The reverse conducting IGBT power integration module of claim 7, wherein the IGBT device comprises a number of IGBT cells and the FRD device comprises a number of FRD cells;
wherein the number of the IGBT units in each IGBT device is the same as the number of the FRD units in each FRD device.
9. The reverse conducting IGBT power integrated module according to claim 6,
the reverse conducting IGBT chip also comprises a second isolation region for dividing the reverse conducting IGBT chip into two parts;
the second isolation region is a gate wiring region or a scribing channel.
10. The reverse conducting IGBT power integrated module according to claim 6,
the reverse conducting IGBT chip further comprises a third isolation region and a fourth isolation region which are vertically crossed with each other so as to divide the reverse conducting IGBT chip into four parts;
the third isolation region and the fourth isolation region are gate wiring regions or scribing channels.
11. The reverse conducting IGBT power integrated module according to claim 9 or 10,
in each part of the reverse conducting IGBT chip, the number of the IGBT devices is greater than or equal to 2, and the number of the IGBT devices is 1 more than that of the FRD devices;
in each part of the reverse conducting type IGBT chip, the IGBT devices and the FRD devices are longitudinally and alternately arranged or transversely and alternately arranged.
12. The reverse conducting IGBT power integration module of claim 11, wherein the IGBT device comprises a number of IGBT cells and the FRD device comprises a number of FRD cells;
wherein the number of the IGBT units in each IGBT device is the same as the number of the FRD units in each FRD device.
13. The reverse conducting IGBT power integration module according to claim 9 or 10, wherein each portion of the reverse conducting IGBT chip corresponds to one gate PAD region to enhance uniform distribution of gate signals.
CN202010837962.8A 2020-08-19 2020-08-19 Reverse conducting IGBT power integrated module Pending CN111987089A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022037622A1 (en) * 2020-08-19 2022-02-24 株洲中车时代半导体有限公司 Reverse conducting igbt power integration module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020038873A1 (en) * 2000-09-29 2002-04-04 Michiaki Hiyoshi Semiconductor device including intermediate wiring element
US20130336033A1 (en) * 2012-06-14 2013-12-19 Infineon Technologies Austria Ag Integrated Power Semiconductor Component, Production Method and Chopper Circuit Comprising Integrated Semiconductor Component
CN104282689A (en) * 2013-07-05 2015-01-14 上海华虹宏力半导体制造有限公司 IGBT device embedded with FRD and manufacturing method thereof
US20160293595A1 (en) * 2015-04-06 2016-10-06 Mitsubishi Electric Corporation Semiconductor device
US20180350960A1 (en) * 2017-05-30 2018-12-06 Fuji Electric Co., Ltd. Semiconductor device
CN109314143A (en) * 2016-06-14 2019-02-05 株式会社电装 Semiconductor device
CN110310990A (en) * 2018-03-20 2019-10-08 株式会社东芝 Semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057235A (en) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp Insulated gate type bipolar transistor, its manufacturing method, and inverter circuit
EP2862202B1 (en) * 2012-06-19 2016-04-27 ABB Technology AG Substrate for mounting multiple power transistors thereon and power semiconductor module
CN103311245B (en) * 2013-06-08 2015-07-15 株洲南车时代电气股份有限公司 Reverse conducting IGBT (insulated gate bipolar transistor) chip and method for manufacturing same
CN105210187B (en) * 2013-10-04 2017-10-10 富士电机株式会社 Semiconductor device
JP6197773B2 (en) * 2014-09-29 2017-09-20 トヨタ自動車株式会社 Semiconductor device
JP6598739B2 (en) * 2016-07-14 2019-10-30 三菱電機株式会社 Semiconductor module
JP6589817B2 (en) * 2016-10-26 2019-10-16 株式会社デンソー Semiconductor device
CN111987089A (en) * 2020-08-19 2020-11-24 株洲中车时代半导体有限公司 Reverse conducting IGBT power integrated module

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020038873A1 (en) * 2000-09-29 2002-04-04 Michiaki Hiyoshi Semiconductor device including intermediate wiring element
US20130336033A1 (en) * 2012-06-14 2013-12-19 Infineon Technologies Austria Ag Integrated Power Semiconductor Component, Production Method and Chopper Circuit Comprising Integrated Semiconductor Component
CN104282689A (en) * 2013-07-05 2015-01-14 上海华虹宏力半导体制造有限公司 IGBT device embedded with FRD and manufacturing method thereof
US20160293595A1 (en) * 2015-04-06 2016-10-06 Mitsubishi Electric Corporation Semiconductor device
CN109314143A (en) * 2016-06-14 2019-02-05 株式会社电装 Semiconductor device
US20180350960A1 (en) * 2017-05-30 2018-12-06 Fuji Electric Co., Ltd. Semiconductor device
CN110310990A (en) * 2018-03-20 2019-10-08 株式会社东芝 Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022037622A1 (en) * 2020-08-19 2022-02-24 株洲中车时代半导体有限公司 Reverse conducting igbt power integration module

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