CN111985177A - Design method of radio frequency power amplifier - Google Patents

Design method of radio frequency power amplifier Download PDF

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CN111985177A
CN111985177A CN202010612033.7A CN202010612033A CN111985177A CN 111985177 A CN111985177 A CN 111985177A CN 202010612033 A CN202010612033 A CN 202010612033A CN 111985177 A CN111985177 A CN 111985177A
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radio frequency
power amplifier
simulation
frequency power
capacitor
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CN111985177B (en
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李军
尹希雷
毛伟
朱佳垟
代法亮
刘春秀
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Ningbo University
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    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
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    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The invention discloses a design method of a radio frequency power amplifier, which comprises the steps of firstly designing a simulation circuit schematic diagram of the radio frequency power amplifier, then researching the thermal property of the radio frequency power amplifier by constructing a thermal property analysis model of the radio frequency power amplifier, systematically analyzing the thermal property of the radio frequency power amplifier, optimizing the thickness of a copper-clad layer of the radio frequency power amplifier, then obtaining the thickness of the copper-clad layer and the plate thickness, the dielectric constant and the loss tangent parameter of the radio frequency power amplifier based on the thermal property analysis of the radio frequency power amplifier, converting all ideal microstrip lines existing in the simulation circuit schematic diagram of the radio frequency power amplifier into actual microstrip lines, and finally obtaining the actual circuit of the radio frequency power amplifier; the radio frequency power amplifier has the advantages that the thermal performance and the electrical performance are considered, the designed radio frequency power amplifier has better thermal performance and electrical performance, the overall performance is high, and the service life is long.

Description

Design method of radio frequency power amplifier
Technical Field
The invention relates to a radio frequency power amplifier design technology, in particular to a design method of a radio frequency power amplifier.
Background
A radio frequency power amplifier (hereinafter referred to as a radio frequency power amplifier) is one of important components of a wireless communication system, and the performance of the radio frequency power amplifier directly affects the communication quality of the whole wireless communication system. In recent years, researchers in the field of wireless communication have conducted extensive research into the design of radio frequency power amplifiers. In order to design a radio frequency power amplifier meeting the requirements of a wireless communication system, designers adopt a multi-frequency section type radio frequency power amplifier and research methods of multi-mode mixing, multi-structure fusion and the like, but the actual performance of the radio frequency power amplifier designed by the methods cannot reach the expected result. Theories and experiments prove that most of wireless communication system power can be consumed by the radio frequency power amplifier in actual work, and the consumed power can cause heat accumulation of the radio frequency power amplifier, so that the temperature of the radio frequency power amplifier is changed, and finally the electrical property of the radio frequency power amplifier is deviated from the expected property.
With the rapid development of wireless communication systems, especially the rapid popularization of 5G technologies, the application range of radio frequency power amplifiers is wider and wider, the application environment is more and more complex, and the design of radio frequency power amplifiers faces many challenges. The existing design method of the radio frequency power amplifier is not sufficient for researching the thermal performance of the radio frequency power amplifier, and the systematic analysis of the heat release characteristic of the radio frequency power amplifier is very little particularly when the radio frequency power amplifier is designed. The expected electrical performance of the existing radio frequency power amplifier during design is established under the condition of not considering the thermal performance of the radio frequency power amplifier, and the maximum temperature of the radio frequency power amplifier during normal work can reach 150 ℃. When the radio frequency power amplifier is actually applied, because the properties of each material in the radio frequency power amplifier structure are different, the change of temperature can generate thermal stress and thermal deformation in the radio frequency power amplifier structure, which will affect the electrical performance of the radio frequency power amplifier, resulting in the reduction of the overall performance of the radio frequency power amplifier, and in severe cases, the radio frequency power amplifier structure can be damaged, which affects the service life.
Disclosure of Invention
The invention aims to solve the technical problem of providing a design method of a radio frequency power amplifier, wherein the design method gives consideration to thermal property and electrical property in the design process, and the designed radio frequency power amplifier has better thermal property, high overall performance and long service life on the basis of better electrical property.
The technical scheme adopted by the invention for solving the technical problems is as follows: a design method of a radio frequency power amplifier comprises the following steps:
(1) selecting a proper power tube as the power tube of the radio frequency power amplifier according to the working frequency band and the design index of the radio frequency power amplifier, wherein the selection range of the power tube is limited to the power tube which can be downloaded by the company official website to obtain a corresponding model file; downloading a model file corresponding to the power tube in the selected power tube company official website, and importing the model file into ADS simulation software, wherein the ADS simulation software stores the selected power tube;
(2) according to the working frequency band, the design index and the selected power tube of the radio frequency power amplifier, adopting ADS simulation software to design and obtain a simulation circuit schematic diagram of the radio frequency power amplifier, simulating the simulation circuit schematic diagram of the radio frequency power amplifier to obtain a simulation result diagram of the radio frequency power amplifier, observing and recording the dissipation power of the radio frequency power amplifier in the simulation result diagram, and calculating to obtain the average value of the dissipation power; aiming at a simulation circuit schematic diagram of a radio frequency power amplifier, selecting a Layout button in a menu bar of ADS simulation software, clicking a Generator Layout to Generate a Layout of the radio frequency power amplifier, and recording the size of the Layout and the relative position size parameters of a power tube in the Layout; selecting a plate of a circuit board of the radio frequency power amplifier, searching a parameter manual of the power tube for a size parameter of the power tube, a thermal conductivity coefficient, an elastic modulus, a thermal expansion coefficient and a Poisson ratio parameter of the power tube according to the selected plate of the circuit board of the radio frequency power amplifier and the selected plate of the power tube, and searching a parameter manual of the plate of the circuit board of the radio frequency power amplifier for a thickness parameter, a dielectric constant parameter, a loss tangent parameter, a thermal conductivity coefficient, an elastic modulus, a thermal expansion coefficient and a Poisson ratio parameter of the plate;
(3) calling a Geometry module in ANSYS software to construct a thermal characteristic analysis model of the radio frequency power amplifier, which specifically comprises the following steps: the circuit board of the radio frequency power amplifier is represented by a cuboid, the length and the width of the cuboid are determined according to the layout size of the radio frequency power amplifier in the step (2), the height is determined by the thickness of a plate of the circuit board of the radio frequency power amplifier, then a power tube of the radio frequency power amplifier is divided into three layers of structures of a packaging layer, a heat source layer and a heat sink layer and is placed in the circuit board of the radio frequency power amplifier, the position of the power tube of the radio frequency power amplifier in the circuit board of the radio frequency power amplifier is determined according to the relative position size of the power tube in the layout in the step (2), the sizes of the packaging layer, the heat source layer and the heat sink layer are determined according to the size parameters of the power tube in a parameter manual of the power tube, finally, copper cladding is respectively carried out on the upper surface and the lower surface of the circuit board of the radio frequency, obtaining a thermal characteristic analysis model of the radio frequency power amplifier, wherein the thermal characteristic analysis model of the radio frequency power amplifier is drawn by a linear tool in a Geometry module, any two of the circuit board, the power tube and the copper-clad layer are provided with contact surfaces, and any other two parts without contact are non-contact surfaces;
(4) calling a Steady-State-Thermal module (Steady-State temperature simulation module) in ANSYS software, and setting parameters of the Thermal conductivity, the elastic modulus, the Thermal expansion coefficient and the Poisson ratio of a power tube of the radio frequency power amplifier and parameters of the Thermal conductivity, the elastic modulus, the Thermal expansion coefficient and the Poisson ratio of a board of a circuit board of the radio frequency power amplifier in an Engineering Date in the Steady-State-Thermal module;
(5) selecting a Mesh option in a Mechanical interface in a Steady-State-Thermal module, selecting an Insert Sizing command in a popped menu, then selecting the Thermal characteristic analysis model of the radio frequency power amplifier built in the step (3), selecting a Fine Mesh with the Mesh Size in the Element Sizing, finally clicking a right button of a mouse to select a Generator Mesh command in the popped shortcut menu, and finishing the Mesh division of the radio frequency power amplifier model;
(6) in the interface of the step (5), selecting a hot source layer in a radio frequency power amplifier Thermal characteristic analysis model as a load, clicking the hot source layer in the radio frequency power amplifier Thermal characteristic analysis model in a Steady-State-Thermal module, selecting an Internal Heat Generation command in a Heat command in an environmental toolbar and double-clicking, setting the Heat flow density of the hot source layer in a popped up parameter setting window, adding a Convection and Heat exchange boundary condition on a non-contact surface in the radio frequency power amplifier Thermal characteristic analysis model, wherein the value of the Heat flow density is the quotient of the average value of the dissipated power divided by the volume of a Heat source layer, selecting a Convection command in the environmental toolbar in the Steady-State-Thermal module and double-clicking, setting the Convection and Heat exchange coefficient in the Convection boundary condition of the radio frequency power amplifier in the popped up parameter setting window according to the environmental temperature measured by the thermometer under the actually applied working Environment, after the setting is finished, selecting a Temperature option in Thermal in a Solution toolbar, and finally clicking a Solution command to perform simulation Solution calculation so as to obtain a Temperature distribution simulation result of the radio frequency power amplifier Thermal characteristic analysis model;
(7) calling a Static Structural module (Static structure simulation module) in ANSYS software, loading a Temperature distribution simulation result of a radio frequency power amplifier thermal characteristic analysis model into the radio frequency power amplifier thermal characteristic analysis model as a load through an input Body Temperature option, sequentially selecting a Fixed Support option in Supports to load a full constraint boundary condition on the bottom and the periphery of the radio frequency power amplifier thermal characteristic analysis model in a toolbar, selecting a Deformation option and an Equivalent Stress option in a Solution toolbar after the steps are completed, and finally clicking a Solution command to perform simulation Solution calculation to obtain a thermal Stress and thermal Deformation distribution simulation result of the radio frequency power amplifier;
(8) performing optimized design of the thickness of the copper-clad layer: in the interface of the step (5), selecting a hot source layer in a radio frequency power amplifier Thermal characteristic analysis model as a load, clicking the hot source layer in the radio frequency power amplifier Thermal characteristic analysis model in a Steady-State-Thermal module, selecting an Internal Heat Generation command in a Heat command in an environmental toolbar and double-clicking, setting the Heat flow density of the hot source layer in a popped up parameter setting window, adding a Convection and Heat exchange boundary condition on a non-contact surface in the radio frequency power amplifier Thermal characteristic analysis model, wherein the value of the Heat flow density is the quotient of the average value of the dissipated power divided by the volume of a Heat source layer, selecting a Convection command in the environmental toolbar in the Steady-State-Thermal module and double-clicking, setting the Convection and Heat exchange coefficient in the Convection boundary condition of the radio frequency power amplifier in the popped up parameter setting window according to the environmental temperature measured by the thermometer under the actually applied working Environment, selecting a Parameter Set option in ANSYS software and right-clicking, selecting an Edit command from the Parameter Set option to input the thickness range and the step value of the copper-clad layer, selecting a Temperature option in Thermal in a Solution toolbar after the setting is finished, and finally clicking the Solution command to perform simulation Solution calculation so as to obtain Temperature distribution simulation results of the Thermal characteristic analysis model of the radio frequency power amplifier under different copper-clad layer thicknesses; calling a Static Structural module (Static structure simulation module) in ANSYS software, loading Temperature distribution simulation results of the thermal characteristic analysis models of the radio frequency power amplifier under different copper-clad layer thicknesses into the thermal characteristic analysis models of the radio frequency power amplifier as loads in sequence through an input Body Temperature option, selecting a Fixed Support option in Supports to load a full constraint boundary condition on the bottom and the periphery of the thermal characteristic analysis model of the radio frequency power amplifier in a toolbar, selecting a Deformation option and an Equivalent Stress option in a Solution toolbar after the steps are completed, and finally clicking a Solution command to perform simulation Solution calculation so as to obtain thermal Stress and thermal Deformation distribution simulation results of the radio frequency power amplifier under different copper-clad layer thicknesses respectively; according to the simulation result, combining practical application and considering process cost factors, selecting the appropriate thickness of the copper-clad layer as the thickness of the copper-clad layer on the upper surface and the lower surface of the circuit board of the radio frequency power amplifier;
(9) in the simulation circuit schematic diagram interface of the radio frequency power amplifier in ADS simulation software, Linecalc in a toolbar is clicked, a microstrip line conversion tool Linecalc is called out, the plate thickness, the dielectric constant, the loss tangent and the copper-clad layer thickness of the radio frequency power amplifier are arranged in the parameter setting columns corresponding to the plate thickness, the dielectric constant, the loss tangent and the copper-clad layer thickness in the Linecalc working interface, setting the center frequency of the radio frequency power amplifier in the frequency parameter column, wherein the center frequency is determined according to the working frequency band of the radio frequency power amplifier, setting the electrical length parameter of the ideal microstrip line in the electrical parameter bar, clicking the integrated button in the interface to obtain the length and width of the actual microstrip line, according to the method, all ideal microstrip lines existing in the simulation circuit schematic diagram of the radio frequency power amplifier obtained in the step (2) are converted into actual microstrip lines, and finally an actual circuit of the radio frequency power amplifier is obtained;
(10) selecting a Layout button in a menu bar of ADS simulation software, clicking the generated Layout to Generate a Layout of an actual circuit of the radio frequency power amplifier, adjusting the Layout, and finally performing actual processing test on the drawn Layout to complete the design of the radio frequency power amplifier.
The specific process of obtaining the simulation circuit schematic diagram of the radio frequency power amplifier by adopting ADS simulation software design according to the working frequency band, the design index and the selected power tube of the radio frequency power amplifier in the step (2) is as follows:
A. opening a design window in ADS simulation software, calling an FET (field effect transistor) Curve Tracer template at the design window, replacing an original power tube in the Curve Tracer template with a selected power tube, setting drain voltage at VGS (voltage gradient system) of the Curve Tracer template and setting grid voltage at VDS (very high voltage digital subscriber line) according to the drain voltage and the grid voltage in an experimental manual of the selected power tube; selecting a simulate menu in a design window menu bar and clicking the simulate to carry out simulation to obtain an output curve of the drain voltage and the drain current of the selected power tube, acquiring the drain current corresponding to the drain voltage in the selected power tube experiment manual from the output curve, and taking a coordinate point of the drain current as a static working point;
B. a new design window is created in ADS simulation software for stable circuit design, and the specific process is as follows:
b-1, adopting a resistor and a capacitor to build a circuit structure of a stable circuit: the resistor is called a first resistor, the capacitor is called a first capacitor, one end of the first resistor and one end of the first capacitor are connected to be used as one end of the stabilizing circuit, and the other end of the first resistor and the other end of the first capacitor are connected to be used as the other end of the stabilizing circuit;
b-2, determining the resistance value of the first resistor and the capacitance value of the first capacitor, specifically: calling out a selected power tube, two ideal capacitors, grid direct current voltage, drain direct current voltage, a resistor, a capacitor, a StabFact1 control and an S parameter simulation template at the design window of ADS simulation software; connecting a grid electrode of a power tube with one end of a grid electrode direct current voltage and a capacitor respectively, connecting the other end of the capacitor with one end of a first ideal capacitor, connecting one end of a resistor with one end of the capacitor, connecting the other end of the resistor with the other end of the capacitor, and connecting a drain electrode of the power tube with a drain electrode direct current voltage and one end of a second ideal capacitor respectively; connecting the other end of the first ideal capacitor with a first simulation port in the S parameter simulation template, connecting the other end of the second ideal capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar and clicking the Simulte to Simulate the stabilizing circuit to obtain an output curve of the Stabfact1 control; the method comprises the steps that a resistor and a capacitor are sequentially clicked in a double mode, the resistance value of the resistor is adjusted in a popped up resistance parameter setting column, the capacitance value of the capacitor is adjusted in a capacitance parameter setting column, an output curve of a StabFact1 control is observed at the same time, when the output value of the StabFact1 control in the working frequency band of a radio frequency power amplifier is larger than 1 and smaller than 2, the adjustment is finished, the capacitance value of the capacitor and the resistance value of the resistor are recorded, the capacitance value is recorded as the capacitance value of a first capacitor, and the resistance value is the resistance value of the;
b-3, completing the design of a stable circuit;
C. a new design window is created in ADS simulation software for bias circuit design, and the specific process is as follows:
c-1, calling an ideal microstrip line, four capacitors, a power ground and an S parameter simulation template at the design window, wherein the ideal microstrip line is a quarter-wave line;
c-2, building a circuit structure of the grid bias circuit: the ideal microstrip line is called a first ideal microstrip line, the four capacitors are respectively called a second capacitor, a third capacitor, a fourth capacitor and a fifth capacitor, one end of the first ideal microstrip line is connected with one end of the second capacitor, the other end of the second capacitor is connected with a power ground, one end of the third capacitor is connected with one end of the second capacitor, the other end of the third capacitor is connected with the power ground, one end of the fourth capacitor is connected with one end of the third capacitor, the other end of the fourth capacitor is connected with the power ground, one end of the fifth capacitor is connected with one end of the fourth capacitor, and the other end of the fifth capacitor is connected with the power ground;
c-3, connecting the other end of the first ideal microstrip line with a first simulation port in the S parameter simulation template, connecting the other end of the fifth capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of the S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar, clicking the Simulte to Simulate the grid bias circuit, and selecting S in a popped simulation result window21A curve;
c-4, determining capacitance values of the second capacitor to the fifth capacitor, specifically: double-clicking each capacitor in sequence, adjusting the capacitance value of the capacitor at the popped up capacitor parameter setting column, and simultaneously observing S21Output curve when in the working frequency band of the RF power amplifier21When the value is less than-50 dB, the adjustment is finished, and the capacitance value of each capacitor at the moment is recorded;
c-5, completing the design of a grid biasing circuit;
c-6, calling an ideal microstrip line, four capacitors, a power ground and an S parameter simulation template at the design window, wherein the ideal microstrip line is a quarter-wave line;
c-7, building a circuit structure of the drain electrode bias circuit: the ideal microstrip line is called a second ideal microstrip line, the four capacitors are respectively called a sixth capacitor, a seventh capacitor, an eighth capacitor and a ninth capacitor, one end of the second ideal microstrip line is connected with one end of the sixth capacitor, the other end of the sixth capacitor is connected with a power ground, one end of the seventh capacitor is connected with one end of the sixth capacitor, the other end of the seventh capacitor is connected with the power ground, one end of the eighth capacitor is connected with one end of the seventh capacitor, the other end of the eighth capacitor is connected with the power ground, one end of the ninth capacitor is connected with one end of the eighth capacitor, and the other end of the ninth capacitor is connected with the power ground;
c-8, connecting the other end of the second ideal microstrip line with a first simulation port in the S parameter simulation template, connecting the other end of the ninth capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of the S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar, clicking the Simulte to Simulate the drain electrode bias circuit, and selecting S in a popped simulation result window21A curve;
c-9, determining capacitance values of a sixth capacitor to a ninth capacitor, specifically: double-clicking each capacitor in sequence, adjusting the capacitance value of the capacitor at the popped up capacitor parameter setting column, and simultaneously observing S21Output curve when in the working frequency band of the RF power amplifier21When the value is less than-50 dB, the adjustment is finished, and the capacitance value of each capacitor at the moment is recorded;
c-10, completing the design of a drain electrode biasing circuit;
D. calling a Source-Pull simulation template in ADS software, replacing an original power tube with a selected power tube in the Source-Pull simulation template, setting the simulation Frequency range at the Frequency position in the template to be the working Frequency range of a radio Frequency power amplifier, setting the drain voltage at the VGS position to be the drain voltage corresponding to a static working point, setting the grid voltage at the VDS position to be the grid voltage corresponding to the static working point, setting the input power at the Pin position to be the difference value of an output power value and a gain value in a selected power tube data manual, and simulating by adopting a Source traction method to obtain the optimal input impedance;
E. a new design window is created in ADS software for input matching circuit design, specifically: calling out an S parameter simulation template and a Smith match Match (Smith matching tool) control in a component column, connecting a left port of the Smith matching tool with a first simulation port of the S parameter simulation template, connecting a right port of the Smith matching tool with a second simulation port of the S parameter simulation template, setting the impedance value of the first simulation port to be 50 omega, setting the impedance value of the second simulation port to be the conjugate of the obtained optimal input impedance, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template to be the working frequency range of a radio frequency power amplifier, singly striking the Smith Chart tool under a toolbar Tools and associating the Smith Chart tool with the Smith match, and using the Smith Chart tool to carry out input matching circuit design to obtain an input matching circuit;
F. calling a Load-Pull simulation template in ADS software, replacing an original power tube with a selected power tube at the Load-Pull simulation template, setting a Frequency range at a Frequency position in the template as a working Frequency range of a radio Frequency power amplifier, setting a drain voltage at a VGS position as a drain voltage corresponding to a static working point, setting a grid voltage at a VDS position as a grid voltage corresponding to the static working point, setting an input power at a Pin position as a difference value of an output power value and a gain value in a selected power tube data manual, and simulating by adopting a Load traction method to obtain an optimal output impedance;
G. a new design window is created in ADS software for output matching circuit design, specifically: calling out an S parameter simulation template and a Smith Chart match (Smith matching tool) control in a component column, connecting a left port of the Smith matching tool with a first simulation port of the S parameter simulation template, connecting a right port of the Smith matching tool with a second simulation port of the S parameter simulation template, setting the impedance value of the first simulation port of the S parameter simulation template to be the conjugate of the obtained optimal output impedance, setting the impedance value of the second simulation port of the S parameter simulation template to be 50 ohms, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template to be the working frequency range of a radio frequency power amplifier, simply striking a Smith Chart tool under a toolbar Tools and associating the Smith Chart tool with the Smith Chart match, and using the Smith Chart tool to design an output matching circuit to obtain an output matching circuit;
H. creating a new design window in ADS software, copying a stabilizing circuit, a grid bias circuit, a drain bias circuit, an input matching circuit and an output matching circuit to the design window, calling out a selected power tube and a power ground, connecting the grid of the power tube with one end of the stabilizing circuit, connecting the other end of the stabilizing circuit with the input matching circuit, connecting the other end of a first ideal microstrip line in the grid bias circuit with the grid of the power tube, connecting the other end of a second ideal microstrip line in the drain bias circuit with the drain of the power tube, connecting the output matching circuit with the drain of the power tube, and connecting the source of the power tube with the power ground to obtain the whole circuit structure of the radio frequency power amplifier.
And (10) adding a plurality of through holes for heat dissipation at proper positions in the layout after the layout is adjusted.
Compared with the prior art, the invention has the advantages that firstly, the simulation circuit schematic diagram of the radio frequency power amplifier is designed, then the thermal performance of the radio frequency power amplifier is researched by constructing a thermal characteristic analysis model of the radio frequency power amplifier, the thermal characteristic of the radio frequency power amplifier is systematically analyzed, the temperature, the thermal stress and the thermal deformation of the radio frequency power amplifier are simulated, calculated, the thickness of the copper-clad layer and the thickness of the plate material, the dielectric constant and the loss tangent parameter of the radio frequency power amplifier are substituted into the Linecalc working interface of the simulation circuit schematic diagram interface toolbar of the radio frequency power amplifier by analyzing the analysis results of the temperature, the thermal stress and the thermal deformation of the radio frequency power amplifier under different thicknesses of the copper-clad layer, selecting the proper thickness of the copper-clad layer as the thicknesses of the copper-clad layer on the upper surface and the lower surface of the circuit board of the radio frequency power amplifier by combining practical, meanwhile, the central frequency of the radio frequency power amplifier is set on a frequency parameter bar, the electrical length parameter of an ideal microstrip line is set on an electrical parameter bar, the length and the width of an actual microstrip line are obtained by clicking a comprehensive button in an interface, the ideal microstrip line existing in a simulation circuit schematic diagram of the radio frequency power amplifier is completely converted into the actual microstrip line according to the method, and finally an actual circuit of the radio frequency power amplifier is obtained, the radio frequency power amplifier designed by the design method is processed, manufactured and tested, in the aspect of electrical property, in the working frequency band of the radio frequency power amplifier, the output power is not less than 39.2dBm (the design value is 40dBm), the gain is not less than 12dB (the design value is not less than 12dB), the power additional efficiency is not less than 62.6% (the design value is not less than 50%), in the aspect of thermal property, the temperature of the radio frequency power amplifier, the maximum temperature of the radio frequency power amplifier in normal operation is 90.0 ℃, the maximum temperature is consistent with the thermal characteristic analysis result of the radio frequency power amplifier, and the temperature measurement result and the thermal characteristic analysis result of the radio frequency power amplifier are both smaller than the maximum temperature of the existing radio frequency power amplifier in normal operation designed under the condition that the thermal performance of the radio frequency power amplifier is not considered, therefore, the design method of the invention gives consideration to the thermal performance and the electrical performance in the design process of the radio frequency power amplifier, and the designed radio frequency power amplifier has better thermal performance and electrical performance, high overall performance and long service life.
Drawings
Fig. 1 is a simulation result diagram of a radio frequency power amplifier obtained by simulating a simulation circuit schematic diagram of the radio frequency power amplifier in the design method of the radio frequency power amplifier of the present invention;
fig. 2 is a schematic structural diagram of a thermal characteristic analysis model of the rf power amplifier constructed in the method for designing the rf power amplifier according to the present invention;
fig. 3 is a schematic structural diagram of a radio frequency power amplifier after meshing is performed on a thermal characteristic analysis model of the radio frequency power amplifier in the design method of the radio frequency power amplifier of the present invention;
FIG. 4 is a temperature distribution simulation diagram of a thermal characteristic analysis model of the RF power amplifier in the design method of the RF power amplifier of the present invention;
FIG. 5 is a thermal stress distribution simulation diagram of a thermal characteristic analysis model of the RF power amplifier in the design method of the RF power amplifier of the present invention;
FIG. 6 is a thermal deformation distribution simulation diagram of a thermal characteristic analysis model of the RF power amplifier in the design method of the RF power amplifier of the present invention;
FIG. 7 is a temperature variation curve of the RF power amplifier at different copper clad layer thicknesses according to the design method of the RF power amplifier of the present invention;
FIG. 8 is a graph showing the variation of thermal stress and thermal deformation of the RF power amplifier at different thicknesses of the copper-clad layer in the design method of the RF power amplifier of the present invention;
fig. 9 is a temperature distribution simulation diagram after a plurality of via holes for heat dissipation are added in a layout in the design method of the radio frequency power amplifier of the present invention;
fig. 10 is a comparison graph of the results of the simulation and actual test of the electrical performance of the rf power amplifier obtained by the method for designing the rf power amplifier of the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
Example (b): a design method of a radio frequency power amplifier comprises the following steps:
(1) selecting a proper power tube as the power tube of the radio frequency power amplifier according to the working frequency band and the design index of the radio frequency power amplifier, wherein the selection range of the power tube is limited to the power tube which can be downloaded by the company official website to obtain a corresponding model file; downloading a model file corresponding to the power tube in the selected power tube company official website, and importing the model file into ADS simulation software, wherein the ADS simulation software stores the selected power tube;
(2) according to the working frequency band, the design index and the selected power tube of the radio frequency power amplifier, adopting ADS simulation software to design and obtain a simulation circuit schematic diagram of the radio frequency power amplifier, simulating the simulation circuit schematic diagram of the radio frequency power amplifier to obtain a simulation result diagram of the radio frequency power amplifier, as shown in figure 1, observing and recording the dissipation power of the radio frequency power amplifier in the simulation result diagram, and calculating to obtain the average value of the dissipation power; aiming at a simulation circuit schematic diagram of a radio frequency power amplifier, selecting a Layout button in a menu bar of ADS simulation software, clicking a Generator Layout to Generate a Layout of the radio frequency power amplifier, and recording the size of the Layout and the relative position size parameters of a power tube in the Layout; selecting a plate of a circuit board of the radio frequency power amplifier, searching a parameter manual of the power tube for a size parameter of the power tube, a thermal conductivity coefficient, an elastic modulus, a thermal expansion coefficient and a Poisson ratio parameter of the power tube according to the selected plate of the circuit board of the radio frequency power amplifier and the selected plate of the power tube, and searching a parameter manual of the plate of the circuit board of the radio frequency power amplifier for a thickness parameter, a dielectric constant parameter, a loss tangent parameter, a thermal conductivity coefficient, an elastic modulus, a thermal expansion coefficient and a Poisson ratio parameter of the plate;
(3) calling a Geometry module in ANSYS software to construct a thermal characteristic analysis model of the radio frequency power amplifier, which specifically comprises the following steps: the circuit board of the radio frequency power amplifier is represented by a cuboid 1, the length and the width of the cuboid 1 are determined according to the layout size of the radio frequency power amplifier in the step (2), the height is determined by the thickness of a plate of the circuit board of the radio frequency power amplifier, then a power tube of the radio frequency power amplifier is divided into three layers of a packaging layer 2, a heat source layer 3 and a heat sink layer 4 and is placed in the circuit board of the radio frequency power amplifier, the position of the power tube of the radio frequency power amplifier in the circuit board of the radio frequency power amplifier is determined according to the relative position size of the power tube in the layout in the step (2), the sizes of the packaging layer 2, the heat source layer 3 and the heat sink layer 4 are determined according to the size parameter of the power tube in a parameter manual of the power tube, finally, copper cladding is respectively carried out on the upper surface and the lower surface of the circuit board of the radio frequency power amplifier, obtaining a thermal characteristic analysis model of the radio frequency power amplifier, as shown in fig. 2, wherein the thermal characteristic analysis model of the radio frequency power amplifier is drawn by a linear tool in a Geometry module, any two of the circuit board, the power tube and the copper-clad layer have contact parts which are contact surfaces, and any other two parts which do not have contact are non-contact surfaces;
(4) calling a Steady-State-Thermal module (Steady-State temperature simulation module) in ANSYS software, and setting parameters of the Thermal conductivity, the elastic modulus, the Thermal expansion coefficient and the Poisson ratio of a power tube of the radio frequency power amplifier and parameters of the Thermal conductivity, the elastic modulus, the Thermal expansion coefficient and the Poisson ratio of a board of a circuit board of the radio frequency power amplifier in an Engineering Date in the Steady-State-Thermal module;
(5) selecting a Mesh option in a Mechanical interface in a Steady-State-Thermal module, selecting an Insert Sizing command in a popped menu, then selecting the radio frequency power amplifier Thermal characteristic analysis model constructed in the step (3), selecting a Fine Mesh with the Mesh Size in the Element Sizing, finally clicking a right mouse button to select a Generator Mesh command in the popped shortcut menu to complete the Mesh division of the radio frequency power amplifier model, as shown in FIG. 3;
(6) in the interface of the step (5), selecting a Heat source layer in a radio frequency power amplifier Thermal characteristic analysis model as a load, clicking the Heat source layer in the radio frequency power amplifier Thermal characteristic analysis model in a Steady-State-Thermal module, selecting an Internal Heat Generation command in a Heat command in an environmental toolbar and double-clicking, setting the Heat flow density of the Heat source layer in a popped up parameter setting window, adding a Convection Heat transfer boundary condition on a non-contact surface in the radio frequency power amplifier Thermal characteristic analysis model, wherein the value of the Heat flow density is the quotient of the average value of the dissipated power divided by the volume of the Heat source layer 3, selecting a Convection command in the environmental toolbar in the Steady-State-Thermal module and double-clicking, setting the Convection Heat transfer coefficient in the Convection Heat transfer boundary condition of the radio frequency power amplifier in the popped up parameter setting window according to the environmental temperature measured by the thermometer in the actually applied working Environment, after the setting is finished, selecting a Temperature option in Thermal in a Solution toolbar, and finally clicking a Solution command to perform simulation solving calculation to obtain a Temperature distribution simulation result of the radio frequency power amplifier Thermal characteristic analysis model, wherein the Temperature distribution diagram is shown in fig. 4;
(7) calling a Static Structural module (Static structure simulation module) in ANSYS software, loading a Temperature distribution simulation result of a radio frequency power amplifier thermal characteristic analysis model into the radio frequency power amplifier thermal characteristic analysis model as a load through an input Body Temperature option, sequentially selecting a Fixed Support option in Supports to load a full constraint boundary condition on the bottom and the periphery of the radio frequency power amplifier thermal characteristic analysis model in a toolbar, selecting a Deformation option and an Equivalent Stress option in a Solution toolbar after the steps are completed, and finally clicking a Solution command to perform simulation Solution calculation to obtain a thermal Stress and thermal Deformation distribution simulation result of the radio frequency power amplifier, wherein a thermal Stress distribution diagram is shown in FIG. 5, and a thermal Deformation distribution diagram is shown in FIG. 6;
(8) performing optimized design of the thickness of the copper-clad layer: in the interface of the step (5), selecting a hot source layer in a radio frequency power amplifier Thermal characteristic analysis model as a load, clicking the hot source layer in the radio frequency power amplifier Thermal characteristic analysis model in a Steady-State-Thermal module, selecting an Internal Heat Generation command in a Heat command in an environmental toolbar and double-clicking, setting the Heat flow density of the hot source layer in a popped up parameter setting window, adding a Convection and Heat exchange boundary condition on a non-contact surface in the radio frequency power amplifier Thermal characteristic analysis model, wherein the value of the Heat flow density is the quotient of the average value of the dissipated power divided by the volume of a Heat source layer, selecting a Convection command in the environmental toolbar in the Steady-State-Thermal module and double-clicking, setting the Convection and Heat exchange coefficient in the Convection boundary condition of the radio frequency power amplifier in the popped up parameter setting window according to the environmental temperature measured by the thermometer under the actually applied working Environment, selecting a Parameter Set option in ANSYS software and right-clicking, selecting an Edit command from the Parameter Set option to input a copper-clad layer thickness range, wherein the range is 0.5-4.0 (ounce: oz) and a step value is 0.5 (ounce: oz), after the setting is finished, selecting a Temperature option in Thermal in a Solution toolbar, and finally clicking a Solution command to perform simulation Solution calculation to obtain a Temperature distribution simulation result of the radio frequency power amplifier Thermal characteristic analysis model under different copper-clad layer thicknesses, wherein Temperature change curves of the radio frequency power amplifier under different copper-clad layer thicknesses are shown in FIG. 7; calling a Static Structural module (Static structure simulation module) in ANSYS software, loading Temperature distribution simulation results of the thermal characteristic analysis models of the radio frequency power amplifiers under different copper-clad layer thicknesses into the thermal characteristic analysis models of the radio frequency power amplifiers as loads in sequence through an input Body Temperature option, selecting a Fixed Support option in Supports to load a full constraint boundary condition on the bottom and the periphery of the thermal characteristic analysis models of the radio frequency power amplifiers, selecting a Deformation option and an Equivalent Stress option in a Solution toolbar after the steps are completed, and finally clicking a Solution command to perform simulation Solution calculation to obtain thermal Stress and thermal Deformation distribution simulation results of the radio frequency power amplifiers under different copper-clad layer thicknesses respectively, wherein thermal Stress and thermal Deformation change curves of the radio frequency power amplifiers under different copper-clad layer thicknesses are shown in FIG. 8; according to the simulation result, combining practical application and considering process cost factors, selecting the appropriate thickness of the copper-clad layer as the thickness of the copper-clad layer on the upper surface and the lower surface of the circuit board of the radio frequency power amplifier;
(9) in the simulation circuit schematic diagram interface of the radio frequency power amplifier in ADS simulation software, Linecalc in a toolbar is clicked, a microstrip line conversion tool Linecalc is called out, the plate thickness, the dielectric constant, the loss tangent and the copper-clad layer thickness of the radio frequency power amplifier are arranged in the parameter setting columns corresponding to the plate thickness, the dielectric constant, the loss tangent and the copper-clad layer thickness in the Linecalc working interface, setting the center frequency of the radio frequency power amplifier in the frequency parameter column, wherein the center frequency is determined according to the working frequency band of the radio frequency power amplifier, setting the electrical length parameter of the ideal microstrip line in the electrical parameter bar, clicking the integrated button in the interface to obtain the length and width of the actual microstrip line, according to the method, all ideal microstrip lines existing in the simulation circuit schematic diagram of the radio frequency power amplifier obtained in the step (2) are converted into actual microstrip lines, and finally an actual circuit of the radio frequency power amplifier is obtained;
(10) selecting a Layout button in a menu bar of ADS simulation software, clicking the generated Layout to Generate a Layout of an actual circuit of the radio frequency power amplifier, adjusting the Layout, and finally performing actual processing test on the drawn Layout to complete the design of the radio frequency power amplifier.
In this embodiment, the specific process of obtaining the schematic diagram of the simulation circuit of the radio frequency power amplifier by using the ADS simulation software design according to the working frequency band of the radio frequency power amplifier, the design index, and the selected power tube in step (2) is as follows:
A. opening a design window in ADS simulation software, calling an FET (field effect transistor) Curve Tracer template at the design window, replacing an original power tube in the Curve Tracer template with a selected power tube, setting drain voltage at VGS (voltage gradient system) of the Curve Tracer template and setting grid voltage at VDS (very high voltage digital subscriber line) according to the drain voltage and the grid voltage in an experimental manual of the selected power tube; selecting a simulate menu in a design window menu bar and clicking the simulate to carry out simulation to obtain an output curve of the drain voltage and the drain current of the selected power tube, acquiring the drain current corresponding to the drain voltage in the selected power tube experiment manual from the output curve, and taking a coordinate point of the drain current as a static working point;
B. a new design window is created in ADS simulation software for stable circuit design, and the specific process is as follows:
b-1, adopting a resistor and a capacitor to build a circuit structure of a stable circuit: the resistor is called a first resistor, the capacitor is called a first capacitor, one end of the first resistor and one end of the first capacitor are connected to be used as one end of the stabilizing circuit, and the other end of the first resistor and the other end of the first capacitor are connected to be used as the other end of the stabilizing circuit;
b-2, determining the resistance value of the first resistor and the capacitance value of the first capacitor, specifically: calling out a selected power tube, two ideal capacitors, grid direct current voltage, drain direct current voltage, a resistor, a capacitor, a StabFact1 control and an S parameter simulation template at the design window of ADS simulation software; connecting a grid electrode of a power tube with one end of a grid electrode direct current voltage and a capacitor respectively, connecting the other end of the capacitor with one end of a first ideal capacitor, connecting one end of a resistor with one end of the capacitor, connecting the other end of the resistor with the other end of the capacitor, and connecting a drain electrode of the power tube with a drain electrode direct current voltage and one end of a second ideal capacitor respectively; connecting the other end of the first ideal capacitor with a first simulation port in the S parameter simulation template, connecting the other end of the second ideal capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar and clicking the Simulte to Simulate the stabilizing circuit to obtain an output curve of the Stabfact1 control; the method comprises the steps that a resistor and a capacitor are sequentially clicked in a double mode, the resistance value of the resistor is adjusted in a popped up resistance parameter setting column, the capacitance value of the capacitor is adjusted in a capacitance parameter setting column, an output curve of a StabFact1 control is observed at the same time, when the output value of the StabFact1 control in the working frequency band of a radio frequency power amplifier is larger than 1 and smaller than 2, the adjustment is finished, the capacitance value of the capacitor and the resistance value of the resistor are recorded, the capacitance value is recorded as the capacitance value of a first capacitor, and the resistance value is the resistance value of the;
b-3, completing the design of a stable circuit;
C. a new design window is created in ADS simulation software for bias circuit design, and the specific process is as follows:
c-1, calling an ideal microstrip line, four capacitors, a power ground and an S parameter simulation template at the design window, wherein the ideal microstrip line is a quarter-wave line;
c-2, building a circuit structure of the grid bias circuit: the ideal microstrip line is called a first ideal microstrip line, the four capacitors are respectively called a second capacitor, a third capacitor, a fourth capacitor and a fifth capacitor, one end of the first ideal microstrip line is connected with one end of the second capacitor, the other end of the second capacitor is connected with a power ground, one end of the third capacitor is connected with one end of the second capacitor, the other end of the third capacitor is connected with the power ground, one end of the fourth capacitor is connected with one end of the third capacitor, the other end of the fourth capacitor is connected with the power ground, one end of the fifth capacitor is connected with one end of the fourth capacitor, and the other end of the fifth capacitor is connected with the power ground;
c-3, connecting the other end of the first ideal microstrip line with a first simulation port in the S parameter simulation template, connecting the other end of the fifth capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of the S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar, clicking the Simulte to Simulate the grid bias circuit, and selecting S in a popped simulation result window21A curve;
c-4, determining capacitance values of the second capacitor to the fifth capacitor, specifically: each click in turnA capacitor for adjusting the capacitance value of the capacitor in the popped up capacitor parameter setting column and simultaneously observing S21Output curve when in the working frequency band of the RF power amplifier21When the value is less than-50 dB, the adjustment is finished, and the capacitance value of each capacitor at the moment is recorded;
c-5, completing the design of a grid biasing circuit;
c-6, calling an ideal microstrip line, four capacitors, a power ground and an S parameter simulation template at the design window, wherein the ideal microstrip line is a quarter-wave line;
c-7, building a circuit structure of the drain electrode bias circuit: the ideal microstrip line is called a second ideal microstrip line, the four capacitors are respectively called a sixth capacitor, a seventh capacitor, an eighth capacitor and a ninth capacitor, one end of the second ideal microstrip line is connected with one end of the sixth capacitor, the other end of the sixth capacitor is connected with a power ground, one end of the seventh capacitor is connected with one end of the sixth capacitor, the other end of the seventh capacitor is connected with the power ground, one end of the eighth capacitor is connected with one end of the seventh capacitor, the other end of the eighth capacitor is connected with the power ground, one end of the ninth capacitor is connected with one end of the eighth capacitor, and the other end of the ninth capacitor is connected with the power ground;
c-8, connecting the other end of the second ideal microstrip line with a first simulation port in the S parameter simulation template, connecting the other end of the ninth capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of the S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar, clicking the Simulte to Simulate the drain electrode bias circuit, and selecting S in a popped simulation result window21A curve;
c-9, determining capacitance values of a sixth capacitor to a ninth capacitor, specifically: double-clicking each capacitor in sequence, adjusting the capacitance value of the capacitor at the popped up capacitor parameter setting column, and simultaneously observing S21Output curve when in the working frequency band of the RF power amplifier21When the value is less than-50 dB, the adjustment is finished, and the capacitance value of each capacitor at the moment is recorded;
c-10, completing the design of a drain electrode biasing circuit;
D. calling a Source-Pull simulation template in ADS software, replacing an original power tube with a selected power tube in the Source-Pull simulation template, setting the simulation Frequency range at the Frequency position in the template to be the working Frequency range of a radio Frequency power amplifier, setting the drain voltage at the VGS position to be the drain voltage corresponding to a static working point, setting the grid voltage at the VDS position to be the grid voltage corresponding to the static working point, setting the input power at the Pin position to be the difference value of an output power value and a gain value in a selected power tube data manual, and simulating by adopting a Source traction method to obtain the optimal input impedance;
E. a new design window is created in ADS software for input matching circuit design, specifically: calling out an S parameter simulation template and a Smith match Match (Smith matching tool) control in a component column, connecting a left port of the Smith matching tool with a first simulation port of the S parameter simulation template, connecting a right port of the Smith matching tool with a second simulation port of the S parameter simulation template, setting the impedance value of the first simulation port to be 50 omega, setting the impedance value of the second simulation port to be the conjugate of the obtained optimal input impedance, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template to be the working frequency range of a radio frequency power amplifier, singly striking the Smith Chart tool under a toolbar Tools and associating the Smith Chart tool with the Smith match, and using the Smith Chart tool to carry out input matching circuit design to obtain an input matching circuit;
F. calling a Load-Pull simulation template in ADS software, replacing an original power tube with a selected power tube at the Load-Pull simulation template, setting a Frequency range at a Frequency position in the template as a working Frequency range of a radio Frequency power amplifier, setting a drain voltage at a VGS position as a drain voltage corresponding to a static working point, setting a grid voltage at a VDS position as a grid voltage corresponding to the static working point, setting an input power at a Pin position as a difference value of an output power value and a gain value in a selected power tube data manual, and simulating by adopting a Load traction method to obtain an optimal output impedance;
G. a new design window is created in ADS software for output matching circuit design, specifically: calling out an S parameter simulation template and a Smith Chart match (Smith matching tool) control in a component column, connecting a left port of the Smith matching tool with a first simulation port of the S parameter simulation template, connecting a right port of the Smith matching tool with a second simulation port of the S parameter simulation template, setting the impedance value of the first simulation port of the S parameter simulation template to be the conjugate of the obtained optimal output impedance, setting the impedance value of the second simulation port of the S parameter simulation template to be 50 ohms, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template to be the working frequency range of a radio frequency power amplifier, simply striking a Smith Chart tool under a toolbar Tools and associating the Smith Chart tool with the Smith Chart match, and using the Smith Chart tool to design an output matching circuit to obtain an output matching circuit;
H. creating a new design window in ADS software, copying a stabilizing circuit, a grid bias circuit, a drain bias circuit, an input matching circuit and an output matching circuit to the design window, calling out a selected power tube and a power ground, connecting the grid of the power tube with one end of the stabilizing circuit, connecting the other end of the stabilizing circuit with the input matching circuit, connecting the other end of a first ideal microstrip line in the grid bias circuit with the grid of the power tube, connecting the other end of a second ideal microstrip line in the drain bias circuit with the drain of the power tube, connecting the output matching circuit with the drain of the power tube, and connecting the source of the power tube with the power ground to obtain the whole circuit structure of the radio frequency power amplifier.
In this embodiment, in step (10), after the layout is adjusted, a plurality of via holes for dissipating heat are further added to appropriate positions in the layout. Fig. 9 shows a simulation diagram of temperature distribution after a plurality of via holes for heat dissipation are added to the layout.
The radio frequency power amplifier obtained by the design method of the radio frequency power amplifier is simulated, the actual product of the radio frequency power amplifier obtained by the design method of the radio frequency power amplifier is tested, the comparison graph of the electrical performance results of the radio frequency power amplifier and the actual product of the radio frequency power amplifier is shown in figure 10, and the analysis of figure 10 shows that: in the working frequency band of the radio frequency power amplifier, the gain of the radio frequency power amplifier is not lower than 12 dB; the output power is not lower than 39.2dBm, the power added efficiency is not lower than 62.6 percent, and the test result is similar to the simulation result, so that the radio frequency power amplifier designed by the design method of the radio frequency power amplifier has better electrical property. In addition, the temperature of the actual product of the radio frequency power amplifier is measured by the infrared thermometer according to the design method of the radio frequency power amplifier, the highest temperature of the radio frequency power amplifier reaches 90.0 ℃, the analysis result of the thermal characteristic of the radio frequency power amplifier is more consistent with the analysis result of the thermal characteristic of the radio frequency power amplifier, and the temperature measurement result of the radio frequency power amplifier and the thermal characteristic analysis result of the radio frequency power amplifier are both smaller than the highest temperature of the existing radio frequency power amplifier designed under the condition that the thermal performance of the radio frequency power amplifier is not considered when the radio frequency. Therefore, the radio frequency power amplifier designed by the design method of the radio frequency power amplifier has better thermal performance.

Claims (3)

1. A method for designing a radio frequency power amplifier, comprising the steps of:
(1) selecting a proper power tube as the power tube of the radio frequency power amplifier according to the working frequency band and the design index of the radio frequency power amplifier, wherein the selection range of the power tube is limited to the power tube which can be downloaded by the company official website to obtain a corresponding model file; downloading a model file corresponding to the power tube in the selected power tube company official website, and importing the model file into ADS simulation software, wherein the ADS simulation software stores the selected power tube;
(2) according to the working frequency band, the design index and the selected power tube of the radio frequency power amplifier, adopting ADS simulation software to design and obtain a simulation circuit schematic diagram of the radio frequency power amplifier, simulating the simulation circuit schematic diagram of the radio frequency power amplifier to obtain a simulation result diagram of the radio frequency power amplifier, observing and recording the dissipation power of the radio frequency power amplifier in the simulation result diagram, and calculating to obtain the average value of the dissipation power; aiming at a simulation circuit schematic diagram of a radio frequency power amplifier, selecting a Layout button in a menu bar of ADS simulation software, clicking a Generator Layout to Generate a Layout of the radio frequency power amplifier, and recording the size of the Layout and the relative position size parameters of a power tube in the Layout; selecting a plate of a circuit board of the radio frequency power amplifier, searching a parameter manual of the power tube for a size parameter of the power tube, a thermal conductivity coefficient, an elastic modulus, a thermal expansion coefficient and a Poisson ratio parameter of the power tube according to the selected plate of the circuit board of the radio frequency power amplifier and the selected plate of the power tube, and searching a parameter manual of the plate of the circuit board of the radio frequency power amplifier for a thickness parameter, a dielectric constant parameter, a loss tangent parameter, a thermal conductivity coefficient, an elastic modulus, a thermal expansion coefficient and a Poisson ratio parameter of the plate;
(3) calling a Geometry module in ANSYS software to construct a thermal characteristic analysis model of the radio frequency power amplifier, which specifically comprises the following steps: the circuit board of the radio frequency power amplifier is represented by a cuboid, the length and the width of the cuboid are determined according to the layout size of the radio frequency power amplifier in the step (2), the height is determined by the thickness of a plate of the circuit board of the radio frequency power amplifier, then a power tube of the radio frequency power amplifier is divided into three layers of structures of a packaging layer, a heat source layer and a heat sink layer and is placed in the circuit board of the radio frequency power amplifier, the position of the power tube of the radio frequency power amplifier in the circuit board of the radio frequency power amplifier is determined according to the relative position size of the power tube in the layout in the step (2), the sizes of the packaging layer, the heat source layer and the heat sink layer are determined according to the size parameters of the power tube in a parameter manual of the power tube, finally, copper cladding is respectively carried out on the upper surface and the lower surface of the circuit board of the radio frequency, obtaining a thermal characteristic analysis model of the radio frequency power amplifier, wherein the thermal characteristic analysis model of the radio frequency power amplifier is drawn by a linear tool in a Geometry module, any two of the circuit board, the power tube and the copper-clad layer are provided with contact surfaces, and any other two parts without contact are non-contact surfaces;
(4) calling a Steady-State-Thermal module (Steady-State temperature simulation module) in ANSYS software, and setting parameters of the Thermal conductivity, the elastic modulus, the Thermal expansion coefficient and the Poisson ratio of a power tube of the radio frequency power amplifier and parameters of the Thermal conductivity, the elastic modulus, the Thermal expansion coefficient and the Poisson ratio of a board of a circuit board of the radio frequency power amplifier in an Engineering Date in the Steady-State-Thermal module;
(5) selecting a Mesh option in a Mechanical interface in a Steady-State-Thermal module, selecting an Insert Sizing command in a popped menu, then selecting the Thermal characteristic analysis model of the radio frequency power amplifier built in the step (3), selecting a Fine Mesh with the Mesh Size in the Element Sizing, finally clicking a right button of a mouse to select a Generator Mesh command in the popped shortcut menu, and finishing the Mesh division of the radio frequency power amplifier model;
(6) in the interface of the step (5), selecting a hot source layer in a radio frequency power amplifier Thermal characteristic analysis model as a load, clicking the hot source layer in the radio frequency power amplifier Thermal characteristic analysis model in a Steady-State-Thermal module, selecting an Internal Heat Generation command in a Heat command in an environmental toolbar and double-clicking, setting the Heat flow density of the hot source layer in a popped up parameter setting window, adding a Convection and Heat exchange boundary condition on a non-contact surface in the radio frequency power amplifier Thermal characteristic analysis model, wherein the value of the Heat flow density is the quotient of the average value of the dissipated power divided by the volume of a Heat source layer, selecting a Convection command in the environmental toolbar in the Steady-State-Thermal module and double-clicking, setting the Convection and Heat exchange coefficient in the Convection boundary condition of the radio frequency power amplifier in the popped up parameter setting window according to the environmental temperature measured by the thermometer under the actually applied working Environment, after the setting is finished, selecting a Temperature option in Thermal in a Solution toolbar, and finally clicking a Solution command to perform simulation Solution calculation so as to obtain a Temperature distribution simulation result of the radio frequency power amplifier Thermal characteristic analysis model;
(7) calling a Static Structural module (Static structure simulation module) in ANSYS software, loading a Temperature distribution simulation result of a radio frequency power amplifier thermal characteristic analysis model into the radio frequency power amplifier thermal characteristic analysis model as a load through an input Body Temperature option, sequentially selecting a Fixed Support option in Supports to load a full constraint boundary condition on the bottom and the periphery of the radio frequency power amplifier thermal characteristic analysis model in a toolbar, selecting a Deformation option and an Equivalent Stress option in a Solution toolbar after the steps are completed, and finally clicking a Solution command to perform simulation Solution calculation to obtain a thermal Stress and thermal Deformation distribution simulation result of the radio frequency power amplifier;
(8) performing optimized design of the thickness of the copper-clad layer: in the interface of the step (5), selecting a hot source layer in a radio frequency power amplifier Thermal characteristic analysis model as a load, clicking the hot source layer in the radio frequency power amplifier Thermal characteristic analysis model in a Steady-State-Thermal module, selecting an Internal Heat Generation command in a Heat command in an environmental toolbar and double-clicking, setting the Heat flow density of the hot source layer in a popped up parameter setting window, adding a Convection and Heat exchange boundary condition on a non-contact surface in the radio frequency power amplifier Thermal characteristic analysis model, wherein the value of the Heat flow density is the quotient of the average value of the dissipated power divided by the volume of a Heat source layer, selecting a Convection command in the environmental toolbar in the Steady-State-Thermal module and double-clicking, setting the Convection and Heat exchange coefficient in the Convection boundary condition of the radio frequency power amplifier in the popped up parameter setting window according to the environmental temperature measured by the thermometer under the actually applied working Environment, selecting a Parameter Set option in ANSYS software and right-clicking, selecting an Edit command from the Parameter Set option to input the thickness range and the step value of the copper-clad layer, selecting a Temperature option in Thermal in a Solution toolbar after the setting is finished, and finally clicking the Solution command to perform simulation Solution calculation so as to obtain Temperature distribution simulation results of the Thermal characteristic analysis model of the radio frequency power amplifier under different copper-clad layer thicknesses; a Static Structural module (Static structure simulation module) is called out in ANSYS software, loading the Temperature distribution simulation results of the thermal characteristic analysis model of the radio frequency power amplifier under different copper-clad layer thicknesses into the thermal characteristic analysis model of the radio frequency power amplifier as loads in sequence through an Imported Body Temperature selection, selecting a Fixed Support option in Supports to load full constraint boundary conditions on the bottom and the periphery of a thermal characteristic analysis model of the radio frequency power amplifier in a toolbar, selecting a Deformation option and an Equivalent Stress option in a Solution toolbar after the steps are completed, finally clicking a Solution command to perform simulation Solution calculation so as to respectively obtain thermal Stress and thermal Deformation distribution simulation results of the radio frequency power amplifier under different copper-clad layer thicknesses, according to the simulation result, combining practical application and considering process cost factors, selecting the appropriate thickness of the copper-clad layer as the thickness of the copper-clad layer on the upper surface and the lower surface of the circuit board of the radio frequency power amplifier;
(9) in the simulation circuit schematic diagram interface of the radio frequency power amplifier in ADS simulation software, Linecalc in a toolbar is clicked, a microstrip line conversion tool Linecalc is called out, the plate thickness, the dielectric constant, the loss tangent and the copper-clad layer thickness of the radio frequency power amplifier are arranged in the parameter setting columns corresponding to the plate thickness, the dielectric constant, the loss tangent and the copper-clad layer thickness in the Linecalc working interface, setting the center frequency of the radio frequency power amplifier in the frequency parameter column, wherein the center frequency is determined according to the working frequency band of the radio frequency power amplifier, setting the electrical length parameter of the ideal microstrip line in the electrical parameter bar, clicking the integrated button in the interface to obtain the length and width of the actual microstrip line, according to the method, all ideal microstrip lines existing in the simulation circuit schematic diagram of the radio frequency power amplifier obtained in the step (2) are converted into actual microstrip lines, and finally an actual circuit of the radio frequency power amplifier is obtained;
(10) selecting a Layout button in a menu bar of ADS simulation software, clicking the generated Layout to Generate a Layout of an actual circuit of the radio frequency power amplifier, adjusting the Layout, and finally performing actual processing test on the drawn Layout to complete the design of the radio frequency power amplifier.
2. The method according to claim 1, wherein in the step (2), according to the operating frequency band, the design index, and the selected power transistor of the radio frequency power amplifier, the specific process of designing and obtaining the simulation circuit schematic diagram of the radio frequency power amplifier by using the ADS simulation software is as follows:
A. opening a design window in ADS simulation software, calling an FET (field effect transistor) Curve Tracer template at the design window, replacing an original power tube in the Curve Tracer template with a selected power tube, setting drain voltage at VGS (voltage gradient system) of the Curve Tracer template and setting grid voltage at VDS (very high voltage digital subscriber line) according to the drain voltage and the grid voltage in an experimental manual of the selected power tube; selecting a simulate menu in a design window menu bar and clicking the simulate to carry out simulation to obtain an output curve of the drain voltage and the drain current of the selected power tube, acquiring the drain current corresponding to the drain voltage in the selected power tube experiment manual from the output curve, and taking a coordinate point of the drain current as a static working point;
B. a new design window is created in ADS simulation software for stable circuit design, and the specific process is as follows:
b-1, adopting a resistor and a capacitor to build a circuit structure of a stable circuit: the resistor is called a first resistor, the capacitor is called a first capacitor, one end of the first resistor and one end of the first capacitor are connected to be used as one end of the stabilizing circuit, and the other end of the first resistor and the other end of the first capacitor are connected to be used as the other end of the stabilizing circuit;
b-2, determining the resistance value of the first resistor and the capacitance value of the first capacitor, specifically: calling out a selected power tube, two ideal capacitors, grid direct current voltage, drain direct current voltage, a resistor, a capacitor, a StabFact1 control and an S parameter simulation template at the design window of ADS simulation software; connecting a grid electrode of a power tube with one end of a grid electrode direct current voltage and a capacitor respectively, connecting the other end of the capacitor with one end of a first ideal capacitor, connecting one end of a resistor with one end of the capacitor, connecting the other end of the resistor with the other end of the capacitor, and connecting a drain electrode of the power tube with a drain electrode direct current voltage and one end of a second ideal capacitor respectively; connecting the other end of the first ideal capacitor with a first simulation port in the S parameter simulation template, connecting the other end of the second ideal capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar and clicking the Simulte to Simulate the stabilizing circuit to obtain an output curve of the Stabfact1 control; the method comprises the steps that a resistor and a capacitor are sequentially clicked in a double mode, the resistance value of the resistor is adjusted in a popped up resistance parameter setting column, the capacitance value of the capacitor is adjusted in a capacitance parameter setting column, an output curve of a StabFact1 control is observed at the same time, when the output value of the StabFact1 control in the working frequency band of a radio frequency power amplifier is larger than 1 and smaller than 2, the adjustment is finished, the capacitance value of the capacitor and the resistance value of the resistor are recorded, the capacitance value is recorded as the capacitance value of a first capacitor, and the resistance value is the resistance value of the;
b-3, completing the design of a stable circuit;
C. a new design window is created in ADS simulation software for bias circuit design, and the specific process is as follows:
c-1, calling an ideal microstrip line, four capacitors, a power ground and an S parameter simulation template at the design window, wherein the ideal microstrip line is a quarter-wave line;
c-2, building a circuit structure of the grid bias circuit: the ideal microstrip line is called a first ideal microstrip line, the four capacitors are respectively called a second capacitor, a third capacitor, a fourth capacitor and a fifth capacitor, one end of the first ideal microstrip line is connected with one end of the second capacitor, the other end of the second capacitor is connected with a power ground, one end of the third capacitor is connected with one end of the second capacitor, the other end of the third capacitor is connected with the power ground, one end of the fourth capacitor is connected with one end of the third capacitor, the other end of the fourth capacitor is connected with the power ground, one end of the fifth capacitor is connected with one end of the fourth capacitor, and the other end of the fifth capacitor is connected with the power ground;
c-3, connecting the other end of the first ideal microstrip line with a first simulation port in the S parameter simulation template, connecting the other end of the fifth capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of the S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar, clicking the Simulte to Simulate the grid bias circuit, and selecting S in a popped simulation result window21A curve;
c-4, determining capacitance values of the second capacitor to the fifth capacitor, specifically: double-clicking each capacitor in sequence, adjusting the capacitance value of the capacitor at the popped up capacitor parameter setting column, and simultaneously observing S21Output curve when in the working frequency band of the RF power amplifier21The value is less than-50 dB, the adjustment is over, and each of these times is recordedThe capacitance value of the capacitor;
c-5, completing the design of a grid biasing circuit;
c-6, calling an ideal microstrip line, four capacitors, a power ground and an S parameter simulation template at the design window, wherein the ideal microstrip line is a quarter-wave line;
c-7, building a circuit structure of the drain electrode bias circuit: the ideal microstrip line is called a second ideal microstrip line, the four capacitors are respectively called a sixth capacitor, a seventh capacitor, an eighth capacitor and a ninth capacitor, one end of the second ideal microstrip line is connected with one end of the sixth capacitor, the other end of the sixth capacitor is connected with a power ground, one end of the seventh capacitor is connected with one end of the sixth capacitor, the other end of the seventh capacitor is connected with the power ground, one end of the eighth capacitor is connected with one end of the seventh capacitor, the other end of the eighth capacitor is connected with the power ground, one end of the ninth capacitor is connected with one end of the eighth capacitor, and the other end of the ninth capacitor is connected with the power ground;
c-8, connecting the other end of the second ideal microstrip line with a first simulation port in the S parameter simulation template, connecting the other end of the ninth capacitor with a second simulation port in the S parameter simulation template, setting the simulation frequency range of the S parameter simulator in the S parameter simulation template as the working frequency band of the radio frequency power amplifier, selecting Simulte in a menu bar, clicking the Simulte to Simulate the drain electrode bias circuit, and selecting S in a popped simulation result window21A curve;
c-9, determining capacitance values of a sixth capacitor to a ninth capacitor, specifically: double-clicking each capacitor in sequence, adjusting the capacitance value of the capacitor at the popped up capacitor parameter setting column, and simultaneously observing S21Output curve when in the working frequency band of the RF power amplifier21When the value is less than-50 dB, the adjustment is finished, and the capacitance value of each capacitor at the moment is recorded;
c-10, completing the design of a drain electrode biasing circuit;
D. calling a Source-Pull simulation template in ADS software, replacing an original power tube with a selected power tube in the Source-Pull simulation template, setting the simulation Frequency range at the Frequency position in the template to be the working Frequency range of a radio Frequency power amplifier, setting the drain voltage at the VGS position to be the drain voltage corresponding to a static working point, setting the grid voltage at the VDS position to be the grid voltage corresponding to the static working point, setting the input power at the Pin position to be the difference value of an output power value and a gain value in a selected power tube data manual, and simulating by adopting a Source traction method to obtain the optimal input impedance;
E. a new design window is created in ADS software for input matching circuit design, specifically: calling out an S parameter simulation template and a Smith match Match (Smith matching tool) control in a component column, connecting a left port of the Smith matching tool with a first simulation port of the S parameter simulation template, connecting a right port of the Smith matching tool with a second simulation port of the S parameter simulation template, setting the impedance value of the first simulation port to be 50 omega, setting the impedance value of the second simulation port to be the conjugate of the obtained optimal input impedance, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template to be the working frequency range of a radio frequency power amplifier, singly striking the Smith Chart tool under a toolbar Tools and associating the Smith Chart tool with the Smith match, and using the Smith Chart tool to carry out input matching circuit design to obtain an input matching circuit;
F. calling a Load-Pull simulation template in ADS software, replacing an original power tube with a selected power tube at the Load-Pull simulation template, setting a Frequency range at a Frequency position in the template as a working Frequency range of a radio Frequency power amplifier, setting a drain voltage at a VGS position as a drain voltage corresponding to a static working point, setting a grid voltage at a VDS position as a grid voltage corresponding to the static working point, setting an input power at a Pin position as a difference value of an output power value and a gain value in a selected power tube data manual, and simulating by adopting a Load traction method to obtain an optimal output impedance;
G. a new design window is created in ADS software for output matching circuit design, specifically: calling out an S parameter simulation template and a Smith Chart match (Smith matching tool) control in a component column, connecting a left port of the Smith matching tool with a first simulation port of the S parameter simulation template, connecting a right port of the Smith matching tool with a second simulation port of the S parameter simulation template, setting the impedance value of the first simulation port of the S parameter simulation template to be the conjugate of the obtained optimal output impedance, setting the impedance value of the second simulation port of the S parameter simulation template to be 50 ohms, setting the simulation frequency range of an S parameter simulator in the S parameter simulation template to be the working frequency range of a radio frequency power amplifier, simply striking a Smith Chart tool under a toolbar Tools and associating the Smith Chart tool with the Smith Chart match, and using the Smith Chart tool to design an output matching circuit to obtain an output matching circuit;
H. creating a new design window in ADS software, copying a stabilizing circuit, a grid bias circuit, a drain bias circuit, an input matching circuit and an output matching circuit to the design window, calling out a selected power tube and a power ground, connecting the grid of the power tube with one end of the stabilizing circuit, connecting the other end of the stabilizing circuit with the input matching circuit, connecting the other end of a first ideal microstrip line in the grid bias circuit with the grid of the power tube, connecting the other end of a second ideal microstrip line in the drain bias circuit with the drain of the power tube, connecting the output matching circuit with the drain of the power tube, and connecting the source of the power tube with the power ground to obtain the whole circuit structure of the radio frequency power amplifier.
3. The method according to claim 1, wherein in step (10), a plurality of vias for heat dissipation are added at suitable positions in the layout after the layout is adjusted.
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CN113064049A (en) * 2021-03-17 2021-07-02 深圳市时代速信科技有限公司 Radio frequency power amplifier chip test system
CN113688589A (en) * 2021-07-15 2021-11-23 电子科技大学 Electromagnetic thermal reliability life analysis method
CN117742441A (en) * 2024-02-07 2024-03-22 深圳市广能达半导体科技有限公司 Method for enabling high-power radio frequency power supply to output rated power in variable frequency environment

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CN110708701A (en) * 2019-08-16 2020-01-17 宁波大学 Broadband radio frequency power amplifier design method and 5G low-frequency band radio frequency power amplifier

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CN110708701A (en) * 2019-08-16 2020-01-17 宁波大学 Broadband radio frequency power amplifier design method and 5G low-frequency band radio frequency power amplifier

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CN113064049A (en) * 2021-03-17 2021-07-02 深圳市时代速信科技有限公司 Radio frequency power amplifier chip test system
CN113688589A (en) * 2021-07-15 2021-11-23 电子科技大学 Electromagnetic thermal reliability life analysis method
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CN117742441A (en) * 2024-02-07 2024-03-22 深圳市广能达半导体科技有限公司 Method for enabling high-power radio frequency power supply to output rated power in variable frequency environment

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