CN111983413B - Thyristor state monitoring system - Google Patents
Thyristor state monitoring system Download PDFInfo
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- CN111983413B CN111983413B CN202010723194.3A CN202010723194A CN111983413B CN 111983413 B CN111983413 B CN 111983413B CN 202010723194 A CN202010723194 A CN 202010723194A CN 111983413 B CN111983413 B CN 111983413B
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- G01R31/263—Circuits therefor for testing thyristors
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Abstract
The invention discloses a thyristor state monitoring system which comprises an AC voltage division module, a direct current voltage equalizing module, a negative zero-crossing monitoring module, a positive zero-crossing monitoring module, an overvoltage monitoring module and a pulse generation and control module, wherein the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module adopt discrete components to form a circuit. The beneficial effects of the invention are: the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module of the thyristor state monitoring system of the invention use discrete components, thereby improving the stability and reliability of the system, being suitable for occasions with high voltage and large electric field change rate, and the cost of the discrete components is lower than that of a digital chip.
Description
Technical Field
The invention relates to the field of ultra-high voltage power transmission protection, in particular to a thyristor state monitoring system.
Background
The control and protection system of the ultrahigh-voltage direct-current transmission converter valve mainly comprises pole control equipment at ground potential, valve base electronic equipment (an upper layer control system) and converter valve state monitoring equipment at high potential. The converter valve control protection system integrates valve side real-time voltage monitoring return and network side state to carry out scheduling control.
The large-capacity converter valve is used as one of main devices of an ultrahigh-voltage direct-current power transmission system and is mostly integrated by thyristor devices. The triggering modes of the thyristor converter valve are divided into an electrically triggered thyristor valve (ETT) and an optically triggered thyristor valve (LTT). The light-triggered converter valve thyristor voltage monitoring unit forms the thyristor-level direct-current voltage-sharing loop, and simultaneously monitors the voltages at two ends of the thyristor and generates a corresponding return signal. Whether the voltage monitoring system is in normal or not has great influence on the reliable operation of the converter valve, and may cause great safety accidents.
Each thyristor level is provided with a voltage monitoring system unit, and the thyristor voltage monitoring system needs to complete the following functions:
(1) monitoring the blocking capability of the thyristor;
(2) monitoring whether the thyristor can be turned on (monitoring of positive voltage build-up);
(3) monitoring thyristor zero crossings (monitoring of negative voltage build up);
(4) the thyristors are monitored for over-voltage (forward over-voltage) by an internally integrated over-voltage protection circuit.
The converter valve is in the environment with high voltage and large change rate of an electric field, and the reliability and stability of the thyristor monitoring system are higher.
The current thyristor monitoring system of the converter valve adopts an analog circuit and an AD chip of a digital circuit to the hardware of a threshold voltage monitoring part to convert an analog signal into a digital signal. Although the digital chip can reduce the number of parts and shorten the design time, it is insufficient in reliability and stability in the case of high performance requirements.
Disclosure of Invention
In view of the above problems, the present invention provides a thyristor status monitoring system, which mainly solves the problem of insufficient reliability and stability caused by using a digital chip in the thyristor status monitoring system.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a thyristor state monitoring system comprises an AC voltage division module, a direct current voltage equalizing module, a negative zero-crossing monitoring module, a positive zero-crossing monitoring module, an overvoltage monitoring module and a pulse generation and control module, wherein the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module adopt discrete components to form a circuit. The AC voltage division module is connected to one ends of the negative zero-crossing monitoring module and the positive zero-crossing monitoring module through Y2 lines, the direct current voltage sharing module is connected to one ends of the negative zero-crossing monitoring module and the overvoltage monitoring module through Y1 lines, the positive zero-crossing monitoring module is connected to the overvoltage monitoring module through Y3 lines, and the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module are connected to the common end of the pulse generation and control module through Y4 lines, Y5 lines and Y6 lines respectively.
In some embodiments, the negative zero crossing monitoring module has the following specific structure: the circuit comprises a diode D1-1 directly connected with a Y2 line end, wherein the anode of the diode D1-1 is connected with four groups of parallel branches, one group of branches is that the anode of the diode D1-2 is connected with the anode of a diode D1-3, the cathode of the diode D1-3 is connected with a resistor R1-2 in series, one group of branches is a resistor R1-3, one group of branches is that a capacitor C1-3 is connected with a resistor R1-5, the resistor R1-5 is connected to the drain electrode of a field effect transistor M1-2, one group of branches is a resistor R1-4 and a resistor R1-6 which are connected in series, the resistor R1-6 is connected to a Y4 line, and the node between the capacitor C1-3 and the resistor R1-5 is connected to the node between the resistor R1-4 and the resistor R1-6;
a diode D1-5 directly connected with a line end of Y1, the anode of the diode D1-5 is connected with the anode of the diode D1-6 and the collector of a triode B1-1, the cathode of the diode D1-6 is connected with the grid of a field effect transistor M1-2, the emitter of the triode B1-1 is connected with a control electrode G, the base of the triode B1-1 is connected with two groups of parallel branches, one group of branches is the connection of a capacitor C1-1 and the anode of a diode D1-7, one group of branches is a resistor R1-1 and a capacitor C1-4 which are connected in series, the base of the triode B1-1 is connected with the drain of a field effect transistor M1-1, the source of the field effect transistor M1-1 is connected with the cathode of a diode D1-4, a capacitor C1-2, a resistor R1-2 and a resistor R1-3 which are connected in parallel, the anode of the diode D1-4 is connected with the other end of the capacitor C1-2, the grid of the field effect transistor M1-1 and the cathode of the diode D1-3;
the anode of the diode D1-5 is connected with a capacitor C1-5 and a resistor R1-7 which are connected in parallel, and the source of the field effect transistor M1-2 is connected with the cathode of the diode D1-7, the capacitor C1-4, the capacitor C1-5 and the resistor R1-7 and connected to the control electrode G.
In some embodiments, the forward zero-cross monitoring module includes a diode D2-1, a diode D2-2, a diode D2-3, a diode D2-4, a diode D2-5, a resistor R2-1, a resistor R2-2, a resistor R2-3, a resistor R2-4, a resistor R2-5, a resistor R2-6, a resistor R2-7, a resistor R2-8, a capacitor C2-1, a capacitor C2-2, a capacitor C2-3, a capacitor C2-4, a triode B2-1, a field effect transistor M2-1, and a field effect transistor M2-2, an anode of the diode D2-1 is connected with a Y2 line, a cathode of the diode D2-1 is connected with an anode of the diode D2-2, a resistor R2-4, and a resistor R2-5 connected in parallel, and a control electrode of the resistor R2-5 is connected to the other end of the resistor R2-5, the cathode of a diode D2-2 is connected with the cathode of a diode D2-3 and a resistor R2-3 in series in sequence, a Y3 circuit is connected with the emitter of a triode B2-1, a capacitor C2-1 and a resistor R2-1 which are connected in parallel, the base of the triode B2-1 is connected with the other ends of the capacitor C2-1 and the resistor R2-1 and is connected with the resistor R2-2, the other end of the resistor R2-2 is connected with the drain of a field effect tube M2-1, the gate of the field effect tube M2-1 is connected with the capacitor C2-2 and then connected with the anode of the diode D2-3, the source of the field effect tube M2-1 is connected with the capacitor C2-2 and the resistor R2-3 which are connected in parallel, the cathode of a diode D2-4 is connected with the gate of the field effect tube M2-1, the anode of a diode D2-4 is connected with a control electrode G, the collector of the triode B2-1 is connected with the cathode of the diode D2-5, the anode of the diode D2-5 is connected with the grid of the capacitor C2-3, the resistor R2-6 and the field-effect tube M2-2 which are connected in parallel, the drain of the field-effect tube M2-2 is connected with the other end of the resistor R2-4, the source of the field-effect tube M2-2 is connected with the resistor R2-7, the other end of the resistor R2-7 is connected with the control electrode G, the source of the field-effect tube M2-2 is connected with one end of the capacitor C2-4, the other end of the capacitor C2-4 is connected with the resistor R2-6, the source of the field-effect tube M2-2 is connected with the resistor R2-8, and the resistor R2-8 is connected with the line Y5.
In some embodiments, the overvoltage monitoring module comprises a diode D3-1, a diode D3-2, a diode D3-3, a capacitor C3-1, a capacitor C3-2, a capacitor C3-3, a resistor R3-1, a resistor R3-2, a resistor R3-3, a resistor R3-4, a resistor R3-5, a resistor R3-6, a transistor B3-1, a Y1 line and a Y3 line which are connected through the diode D3-1, a cathode of the diode D3-1 is connected with an emitter of the transistor B3-1, a cathode of the diode D3-1 is connected with the capacitor C3-2, the resistor R3-2, the resistor R3-3 and the resistor R3-4 which are connected in parallel, the resistor R3-4 is connected with a cathode of the diode D3-3, an anode of the diode D3-3 is connected with a control electrode G, the base electrode of the triode B3-1 is connected with a capacitor C3-2, a resistor R3-2 and the cathode of a diode D3-2, the anode of the diode D3-2 is connected with a resistor R3-3 and a resistor R3-4, the collector electrode of the triode B3-1 is connected with a resistor R3-6, a Y6 circuit is connected with one end of a resistor R3-1, the other end of the resistor R3-1 is connected with a capacitor C3-1 and a resistor R3-6 which are connected in parallel, and a resistor R3-5 and a capacitor C3-3 which are connected in parallel are connected between the other end of the resistor R3-6 and the cathode of the diode D3-1.
In some embodiments, the input end of the thyristor state monitoring system is connected with a damping circuit for inputting the divided voltage.
In some embodiments, the damping circuit is a primary RC circuit, the primary RC circuit is connected in parallel to two ends of a thyristor by connecting a resistor and a capacitor in series, one end of the resistor connected with the thyristor is connected to the dc voltage-sharing module, and a serial node of the resistor and the capacitor is connected to the AC voltage-dividing module.
The invention has the beneficial effects that: the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module of the thyristor state monitoring system of the invention use discrete components, thereby improving the stability and reliability of the system, being suitable for occasions with high voltage and large electric field change rate, and the cost of the discrete components is lower than that of a digital chip.
Drawings
FIG. 1 is a schematic circuit diagram of a thyristor status monitoring system according to an embodiment of the invention;
FIG. 2 is a schematic circuit diagram of a negative zero crossing monitoring module according to an embodiment of the invention;
FIG. 3 is a schematic circuit diagram of a forward zero-crossing monitoring module according to an embodiment of the present invention;
fig. 4 is a circuit diagram of an overvoltage monitoring module according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the following detailed description of the present invention is provided with reference to the accompanying drawings and detailed description. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some but not all of the relevant aspects of the present invention are shown in the drawings.
As shown in fig. 1, this embodiment provides a thyristor state monitoring system, which includes an AC voltage dividing module, a dc voltage equalizing module, a negative zero-crossing monitoring module, a positive zero-crossing monitoring module, an overvoltage monitoring module, and a pulse generating and controlling module, where the negative zero-crossing monitoring module, the positive zero-crossing monitoring module, and the overvoltage monitoring module form a circuit by using discrete components. The input end of the thyristor state monitoring system is connected with a damping circuit and used for inputting divided voltage. The damping circuit is a primary RC circuit, the primary RC circuit is connected with two ends of the thyristor in parallel after a resistor and a capacitor are connected in series, one end of the resistor, which is connected with the thyristor, is connected with the direct-current voltage-sharing module, and the serial node of the resistor and the capacitor is connected with the AC voltage-dividing module.
The negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module of the thyristor state monitoring system of the invention use discrete components, thereby improving the stability and reliability of the system, being suitable for occasions with high voltage and large electric field change rate, and the cost of the discrete components is lower than that of a digital chip. The state monitoring function of the thyristor is realized through a voltage threshold monitoring unit built by the transistor and the FET discrete elements, the reliability and the stability of the thyristor monitoring system are improved, and the cost of the discrete device is lower than that of a digital chip.
The AC voltage division module is connected to one ends of the negative zero-crossing monitoring module and the positive zero-crossing monitoring module through Y2 lines, the direct current voltage sharing module is connected to one ends of the negative zero-crossing monitoring module and the overvoltage monitoring module through Y1 lines, the positive zero-crossing monitoring module is connected to the overvoltage monitoring module through Y3 lines, and the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module are connected to the common end of the pulse generation and control module through Y4 lines, Y5 lines and Y6 lines respectively. The AC voltage division module in the thyristor state monitoring system is used for adjusting the voltage phase and dividing the voltage, and the voltage phase at the tail end of the AC voltage division module can be about 90 degrees higher than that at the tail end of the DC voltage equalizing module. The pulse is generated in the pulse generation and control module, and information sent by the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module is converted into optical signals and sent to the upper control system. The thyristor monitoring system sends three return signals to the upper control system by monitoring the voltage at two ends of the thyristor, and the upper control system judges the running state of the thyristor according to the signals uploaded by the thyristor monitoring system and is used as a basis for issuing control and protection commands.
(1) Positive voltages at two ends of the thyristor establish a return signal, the forward zero-crossing monitoring module works, and when the forward voltages at the two ends of the thyristor reach 50-70V, the thyristor monitoring system sends positive voltages to the upper control system to establish the return signal.
(2) And when the negative voltage at the two ends of the thyristor reaches-150V to-170V, the thyristor monitoring system sends the negative voltage to an upper control system to establish a return signal.
(3) When the forward voltage at the two ends of the thyristor reaches 6500-7500V, the overvoltage monitoring module works, and the thyristor monitoring system sends an overvoltage protection return signal to an upper control system.
As shown in fig. 2, the negative zero-crossing monitoring module has the following specific structure: the circuit comprises a diode D1-1 directly connected with a Y2 line end, wherein the anode of the diode D1-1 is connected with four groups of parallel branches, one group of branches is that the anode of the diode D1-2 is connected with the anode of a diode D1-3, the cathode of the diode D1-3 is connected with a resistor R1-2 in series, one group of branches is a resistor R1-3, one group of branches is that a capacitor C1-3 is connected with a resistor R1-5, the resistor R1-5 is connected to the drain electrode of a field effect transistor M1-2, one group of branches is a resistor R1-4 and a resistor R1-6 which are connected in series, the resistor R1-6 is connected to a Y4 line, and the node between the capacitor C1-3 and the resistor R1-5 is connected to the node between the resistor R1-4 and the resistor R1-6;
a diode D1-5 directly connected with a line end of Y1, the anode of the diode D1-5 is connected with the anode of the diode D1-6 and the collector of a triode B1-1, the cathode of the diode D1-6 is connected with the grid of a field effect transistor M1-2, the emitter of the triode B1-1 is connected with a control electrode G, the base of the triode B1-1 is connected with two groups of parallel branches, one group of branches is the connection of a capacitor C1-1 and the anode of a diode D1-7, one group of branches is a resistor R1-1 and a capacitor C1-4 which are connected in series, the base of the triode B1-1 is connected with the drain of a field effect transistor M1-1, the source of the field effect transistor M1-1 is connected with the cathode of a diode D1-4, a capacitor C1-2, a resistor R1-2 and a resistor R1-3 which are connected in parallel, the anode of the diode D1-4 is connected with the other end of the capacitor C1-2, the grid of the field effect transistor M1-1 and the cathode of the diode D1-3;
the anode of the diode D1-5 is connected with a capacitor C1-5 and a resistor R1-7 which are connected in parallel, and the source of the field effect transistor M1-2 is connected with the cathode of the diode D1-7, the capacitor C1-4, the capacitor C1-5 and the resistor R1-7 and connected to the control electrode G.
When the voltage across the thyristor changes from positive voltage zero crossing to negative voltage, the potential at the point G is higher than that at the point Y1, when the potential difference is higher than a certain threshold value, M1-2 is conducted, and Y4 sends a pulse signal. And when the negative voltage at the two ends of the thyristor reaches-150V to-170V, the thyristor monitoring system sends the negative voltage to an upper control system to establish a return signal.
As shown in FIG. 3, the forward zero-cross monitoring module includes a diode D2-1, a diode D2-2, a diode D2-3, a diode D2-4, a diode D2-5, a resistor R2-1, a resistor R2-2, a resistor R2-3, a resistor R2-4, a resistor R2-5, a resistor R2-6, a resistor R2-7, a resistor R2-8, a capacitor C2-1, a capacitor C2-2, a capacitor C2-3, a capacitor C2-4, a triode B2-1, a field effect transistor M2-1 and a field effect transistor M2-2, wherein the anode of the diode D2-1 is connected with a Y2 line, the cathode of the diode D2-1 is connected with the anode of the diode D2-2, the resistor R2-4 and the resistor R2-5 which are connected in parallel, and the other end of the resistor R2-5 is connected with a control electrode, the cathode of a diode D2-2 is connected with the cathode of a diode D2-3 and a resistor R2-3 in series in sequence, a Y3 circuit is connected with the emitter of a triode B2-1, a capacitor C2-1 and a resistor R2-1 which are connected in parallel, the base of the triode B2-1 is connected with the other ends of the capacitor C2-1 and the resistor R2-1 and is connected with the resistor R2-2, the other end of the resistor R2-2 is connected with the drain of a field effect tube M2-1, the gate of the field effect tube M2-1 is connected with the capacitor C2-2 and then connected with the anode of the diode D2-3, the source of the field effect tube M2-1 is connected with the capacitor C2-2 and the resistor R2-3 which are connected in parallel, the cathode of a diode D2-4 is connected with the gate of the field effect tube M2-1, the anode of a diode D2-4 is connected with a control electrode G, the collector of the triode B2-1 is connected with the cathode of the diode D2-5, the anode of the diode D2-5 is connected with the grid of the capacitor C2-3, the resistor R2-6 and the field-effect tube M2-2 which are connected in parallel, the drain of the field-effect tube M2-2 is connected with the other end of the resistor R2-4, the source of the field-effect tube M2-2 is connected with the resistor R2-7, the other end of the resistor R2-7 is connected with the control electrode G, the source of the field-effect tube M2-2 is connected with one end of the capacitor C2-4, the other end of the capacitor C2-4 is connected with the resistor R2-6, the source of the field-effect tube M2-2 is connected with the resistor R2-8, and the resistor R2-8 is connected with the line Y5.
When the voltage at two ends of the thyristor changes from zero crossing of a negative voltage to positive voltage, the potential at the point Y2 reaches a certain threshold value, the partial voltage at the point R2-3 reaches a certain value, so that M2-1 is turned on, the potential at the point Y2 is about 90 degrees ahead of the potential at the point Y3, so that M2-1 is allowed to communicate in advance, and when the partial voltage of the potential at the point Y2 on the point R2-1 exceeds a certain value, B2-1 is turned on. Further, when the partial pressure of R2-6 reaches a certain value, M2-2 is turned on, and Y5 sends a pulse signal. Positive voltages at two ends of the thyristor establish a return signal, the forward zero-crossing monitoring module works, and when the forward voltages at the two ends of the thyristor reach 50-70V, the thyristor monitoring system sends positive voltages to the upper control system to establish the return signal.
As shown in FIG. 4, the overvoltage monitoring module includes a diode D3-1, a diode D3-2, a diode D3-3, a capacitor C3-1, a capacitor C3-2, a capacitor C3-3, a resistor R3-1, a resistor R3-2, a resistor R3-3, a resistor R3-4, a resistor R3-5, a resistor R3-6, a transistor B3-1, a Y1 line and a Y3 line connected through the diode D3-1, a cathode of the diode D3-1 connected to an emitter of the transistor B3-1, a cathode of the diode D3-1 connected in parallel to the capacitor C3-2, the resistor R3-2, the resistor R3-3 and the resistor R3-4, a resistor R3-4 connected to a cathode of the diode D3-3, an anode of the diode D3-3 connected to a control electrode G, the base electrode of the triode B3-1 is connected with a capacitor C3-2, a resistor R3-2 and the cathode of a diode D3-2, the anode of the diode D3-2 is connected with a resistor R3-3 and a resistor R3-4, the collector electrode of the triode B3-1 is connected with a resistor R3-6, a Y6 circuit is connected with one end of a resistor R3-1, the other end of the resistor R3-1 is connected with a capacitor C3-1 and a resistor R3-6 which are connected in parallel, and a resistor R3-5 and a capacitor C3-3 which are connected in parallel are connected between the other end of the resistor R3-6 and the cathode of the diode D3-1.
When the Y1 point exceeds a certain value, B3-1 is switched on after the partial voltage of R3-2 reaches 0.7V, and then Y6 sends a pulse signal. When the forward voltage at the two ends of the thyristor reaches 6500-7500V, the overvoltage monitoring module works, and the thyristor monitoring system sends an overvoltage protection return signal to an upper control system.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention accordingly, and not to limit the protection scope of the present invention accordingly. All equivalent changes or modifications made in accordance with the spirit of the present disclosure are intended to be covered by the scope of the present disclosure.
Claims (5)
1. A thyristor state monitoring system comprises an AC voltage division module, a direct current voltage equalizing module, a negative zero-crossing monitoring module, a positive zero-crossing monitoring module, an overvoltage monitoring module and a pulse generation and control module, and is characterized in that the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module adopt discrete components to form a circuit;
the AC voltage division module is connected to one ends of the negative zero-crossing monitoring module and the positive zero-crossing monitoring module through Y2 lines, the direct-current voltage sharing module is connected to one ends of the negative zero-crossing monitoring module and the overvoltage monitoring module through Y1 lines, the positive zero-crossing monitoring module is connected to the overvoltage monitoring module through Y3 lines, and the negative zero-crossing monitoring module, the positive zero-crossing monitoring module and the overvoltage monitoring module are respectively connected to the common end of the pulse generation and control module through Y4 lines, Y5 lines and Y6 lines;
the negative zero-crossing monitoring module has the following specific structure: comprises the steps of (a) preparing a mixture of a plurality of raw materials,
the diode D1-1 is directly connected with the Y2 line end, the anode of the diode D1-1 is connected with four groups of branches connected in parallel, one group of branches is the anode of the diode D1-2 and the anode of the diode D1-3, the cathode of the diode D1-3 is connected with the resistor R1-2 in series, one group of branches is the resistor R1-3, one group of branches is the capacitor C1-3 and the resistor R1-5 in connection, the resistor R1-5 is connected to the drain electrode of the field effect transistor M1-2, one group of branches is the resistor R1-4 and the resistor R1-6 in series, the resistor R1-6 is connected to the Y4 line, and the node between the capacitor C1-3 and the resistor R1-5 is connected to the node between the resistor R1-4 and the resistor R1-6;
a diode D1-5 directly connected with the line end of the Y1, the anode of the diode D1-5 is connected with the anode of the diode D1-6 and the collector of a triode B1-1, the cathode of the diode D1-6 is connected with the gate of a field effect transistor M1-2, the emitter of the triode B1-1 is connected with a control electrode G, the base of the triode B1-1 is connected with two groups of parallel branches, one group of branches is the connection of a capacitor C1-1 and the anode of a diode D1-7, one group of branches is a resistor R1-1 and a capacitor C1-4 connected in series, the base of the triode B1-1 is connected with the drain of the field effect transistor M1-1, the source of the field effect transistor M1-1 is connected with the cathode of a diode D1-4, a capacitor C1-2, a resistor R1-2 and a resistor R1-3 connected in parallel, the anode of the diode D1-4 is connected with the other end of the capacitor C1-2, the grid of the field effect transistor M1-1 and the cathode of the diode D1-3;
the positive electrode of the diode D1-5 is connected with a capacitor C1-5 and a resistor R1-7 which are connected in parallel, and the source electrode of the field effect transistor M1-2 is connected with the negative electrode of the diode D1-7, the capacitor C1-4, the capacitor C1-5 and the resistor R1-7 and is connected with the control electrode G.
2. The thyristor status monitoring system of claim 1, wherein the forward zero-cross monitoring module comprises a diode D2-1, a diode D2-2, a diode D2-3, a diode D2-4, a diode D2-5, a resistor R2-1, a resistor R2-2, a resistor R2-3, a resistor R2-4, a resistor R2-5, a resistor R2-6, a resistor R2-7, a resistor R2-8, a capacitor C2-1, a capacitor C2-2, a capacitor C2-3, a capacitor C2-4, a triode B2-1, a field effect transistor M2-1, and a field effect transistor M2-2, wherein the anode of the diode D2-1 is connected with a Y2 line, and the cathode of the diode D2-1 is connected with the anode of the diode D2-2 in parallel, The resistor R2-4 and the resistor R2-5 are connected, the other end of the resistor R2-5 is connected with the control electrode G, the cathode of the diode D2-2 is sequentially connected with the cathode of the diode D2-3 and the resistor R2-3 in series, a Y3 circuit is connected with the emitter of the triode B2-1, the capacitor C2-1 and the resistor R2-1 which are connected in parallel, the base of the triode B2-1 is connected with the other ends of the capacitor C2-1 and the resistor R2-1 and is connected with the resistor R2-2, the other end of the resistor R2-2 is connected with the drain of the field effect tube M2-1, the grid of the field effect tube M2-1 is connected with the capacitor C2-2 and then connected with the anode of the diode D2-3, the source of the field effect tube M2-1 is connected with the capacitor C2-2 and the resistor R2-3 which are connected in parallel, the negative electrode of the diode D2-4 is connected with the gate of the field effect transistor M2-1, the positive electrode of the diode D2-4 is connected with the control electrode G, the collector of the triode B2-1 is connected with the negative electrode of the diode D2-5, the positive electrode of the diode D2-5 is connected with the capacitor C2-3, the resistor R2-6 and the gate of the field effect transistor M2-2 which are connected in parallel, the drain of the field effect transistor M2-2 is connected with the other end of the resistor R2-4, the source of the field effect transistor M2-2 is connected with the resistor R2-7, the other end of the resistor R2-7 is connected with the control electrode G, the source of the field effect transistor M2-2 is connected with one end of the capacitor C2-4, the other end of the capacitor C2-4 is connected with the resistor R2-6, and the source of the field effect transistor M2-2 is connected with the resistor R2-8, the resistor R2-8 is connected with a line Y5.
3. The thyristor status monitoring system according to claim 1, wherein the overvoltage monitoring module comprises a diode D3-1, a diode D3-2, a diode D3-3, a capacitor C3-1, a capacitor C3-2, a capacitor C3-3, a resistor R3-1, a resistor R3-2, a resistor R3-3, a resistor R3-4, a resistor R3-5, a resistor R3-6, a transistor B3-1, a Y1 line and a Y3 line which are connected through the diode D3-1, a cathode of the diode D3-1 is connected with an emitter of the transistor B3-1, a cathode of the diode D3-1 is connected with the capacitor C3-2, the resistor R3-2, the resistor R3-3 and the resistor R3-4 which are connected in parallel, and a resistor R3-4 is connected with a cathode of a diode D3-3, the positive electrode of the diode D3-3 is connected with a control electrode G, the base electrode of the triode B3-1 is connected with a capacitor C3-2, a resistor R3-2 and the negative electrode of the diode D3-2, the positive electrode of the diode D3-2 is connected with a resistor R3-3 and a resistor R3-4, the collector electrode of the triode B3-1 is connected with a resistor R3-6, a Y6 circuit is connected with one end of a resistor R3-1, the other end of the resistor R3-1 is connected with the capacitor C3-1 and the resistor R3-6 which are connected in parallel, and a resistor R3-5 and a capacitor C3-3 which are connected in parallel are connected between the other end of the resistor R3-6 and the negative electrode of the diode D3-1.
4. The thyristor condition monitoring system of claim 1, wherein the thyristor condition monitoring system input is connected to a damping circuit for inputting a divided voltage.
5. The thyristor status monitoring system according to claim 4, wherein the damping circuit is a primary RC circuit, the primary RC circuit is connected in parallel with two ends of the thyristor by connecting a resistor and a capacitor in series, one end of the resistor connected with the thyristor is connected to the DC voltage-sharing module, and a serial node of the resistor and the capacitor is connected to the AC voltage-dividing module.
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