CN111968926A - Semiconductor equipment and semiconductor processing method - Google Patents
Semiconductor equipment and semiconductor processing method Download PDFInfo
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- CN111968926A CN111968926A CN201910421269.XA CN201910421269A CN111968926A CN 111968926 A CN111968926 A CN 111968926A CN 201910421269 A CN201910421269 A CN 201910421269A CN 111968926 A CN111968926 A CN 111968926A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a semiconductor device and a wafer transmission method, wherein the semiconductor device comprises: equipment front end module and transmission platform still include: the dual-function cavity is arranged between the equipment front-end module and the transmission platform and has a transfer function and a process function; wherein the transfer function is to enable transfer of wafers between the equipment front end module and the transfer platform while transitioning the chamber between an atmospheric state and a vacuum state; the process function is to realize the process treatment of the workpiece to be processed. The invention improves the production efficiency of the semiconductor equipment.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to semiconductor equipment and a semiconductor process treatment method.
Background
Currently, semiconductor devices are essential in the fabrication process of integrated circuits. In the process treatment (such as etching) of metal aluminum, chlorine is widely used as a reaction gas, a main product of the reaction gas is aluminum chloride, and the reaction of the product with water generates highly corrosive hydrogen chloride, which can corrode aluminum.
As shown in fig. 1, which is a block diagram of a semiconductor device in the prior art, a transfer platform can generally carry 4 chambers, and the 4 chambers include 2 glue removing chambers. The transmission sequence of the wafers is a wafer box Foup, an equipment front end module EFEM, a wafer transfer station LoadLock, a transmission platform, a reaction cavity PM, a transmission platform, a photoresist removing cavity, a transmission platform, a wafer transfer station LoadLock, an equipment front end module EFEM, a wafer box Foup. And gate valves are used for state isolation among different modules. The transmission platform is vacuum state all the time, and equipment front end module EFEM is atmospheric state all the time, and wafer transfer station loadLock is used for the conversion of vacuum and atmospheric state, and when the wafer transmitted between equipment front end module EFEM and wafer transfer station loadLock, wafer transfer station loadLock was atmospheric state, and when the wafer transmitted between transmission platform and wafer transfer station loadLock, wafer transfer station loadLock was vacuum state.
In conclusion, the photoresist removing cavity in the prior art occupies a hanging position of the transmission cavity which can be used for hanging the process cavity, so that the production efficiency of the whole semiconductor equipment is greatly reduced, and the productivity of the equipment is influenced.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a semiconductor device and a semiconductor processing method, so as to improve the working efficiency of the semiconductor device and the device productivity.
To achieve the object of the present invention, there is provided a semiconductor device including: equipment front end module and transmission platform, its characterized in that still includes: the dual-function cavity is arranged between the equipment front-end module and the transmission platform and has a transfer function and a process function; wherein the transfer function is to enable transfer of wafers between the equipment front end module and the transfer platform while transitioning the chamber between an atmospheric state and a vacuum state; the process function is to realize the process treatment of the workpiece to be processed.
Preferably, the dual function chamber comprises:
the cavity is provided with two film transmission ports which are respectively butted with the respective film transmission ports of the equipment front-end module and the transmission platform;
the sealing door is arranged corresponding to the film conveying opening and is used for opening or sealing the film conveying opening; and
the process base is used for realizing the process treatment of the workpiece to be processed loaded on the process base, preferably, the process function comprises a photoresist removing process used for removing photoresist of the workpiece to be processed.
Preferably, the dual function chamber is two.
Preferably, the method further comprises the following steps: a detection device;
the detection device is used for detecting the workpiece to be processed in the dual-function cavity.
Preferably, the method further comprises the following steps: the reaction chambers are hung on the conveying platform.
A semiconductor process method using the semiconductor device described in the present application, the semiconductor process method comprising:
judging whether the dual-function cavity is to be processed or not, if so, waiting and returning to continue the judging step; if not, the dual-function cavity is switched to the air pressure state consistent with the air pressure state of the workpiece to be processed conveying end, and the workpiece to be processed in the workpiece to be processed conveying end is conveyed into the dual-function cavity.
Preferably, the workpiece to be processed is transferred to the front end module of the apparatus, and if there is no workpiece to be processed in the dual-function chamber, the dual-function chamber is switched to an atmospheric state.
Preferably, the conveying end of the workpiece to be processed is the conveying platform, and if the dual-function chamber has no workpiece to be processed, the dual-function chamber is switched to a vacuum state.
Preferably, after the workpiece to be processed is introduced into the dual-function chamber, a photoresist stripping process may be performed.
The invention has the following beneficial effects:
the semiconductor equipment provided by the invention is provided with the double-function cavity with the transfer function and the process function between the equipment front-end module and the transmission platform, wherein the transfer function is that a wafer can be transferred between the equipment front-end module and the transmission platform, and the cavity is switched between an atmospheric state and a vacuum state; the process function enables one of the process steps for processing the wafer. The semiconductor equipment provided by the invention can enable wafer transmission, wafer processing technology processing and conversion between an atmospheric state and a vacuum state to be completed by one dual-function chamber, so that the hanging position of an original transmission platform capable of hanging the chamber is increased, and the semiconductor equipment can be used for hanging the process chamber, thereby increasing the number of the process chambers, improving the production efficiency of the semiconductor equipment and improving the productivity of the equipment.
The semiconductor process method provided by the invention judges whether the dual-function cavity has a workpiece to be processed, and waits and returns to continue the judging step if the dual-function cavity has the workpiece to be processed; if not, the dual-function cavity is switched to the air pressure state consistent with the air pressure state of the to-be-processed workpiece transmitting end, and the to-be-processed workpiece in the to-be-processed workpiece transmitting end is transmitted into the dual-function cavity, so that the safety of transmission and process of the to-be-processed workpiece in the semiconductor equipment is ensured.
Drawings
FIG. 1 is a block diagram of a semiconductor device in the prior art;
fig. 2 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a dual function chamber in an embodiment of the present invention;
fig. 4 is another schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
FIG. 5 is a flow chart of a method of semiconductor process processing according to an embodiment of the present invention;
fig. 6 is another flow chart of a semiconductor processing method according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the semiconductor device and the semiconductor processing method provided by the present invention are described in detail below with reference to the accompanying drawings.
Fig. 2 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention, where the semiconductor device includes: equipment front end module E and transmission platform T still include: the double-function cavity is arranged between the equipment front-end module E and the transmission platform T and has a transfer function and a process function, wherein the transfer function is that a wafer can be transferred between the equipment front-end module E and the transmission platform T, and the cavity is switched between an atmospheric state and a vacuum state; the process function is to realize the process treatment of the workpiece to be processed.
The semiconductor device provided by the embodiment of the invention has the double-function cavity, the double-function cavity has a transfer function and a process function, the transfer function is to transfer a wafer between the front-end module of the device and the transmission platform, and simultaneously, the cavity is switched between an atmospheric state and a vacuum state; the process function is that the process treatment can be carried out on the workpiece to be processed; the semiconductor equipment provided by the embodiment of the invention can enable wafer transmission, wafer processing process steps and conversion between an atmospheric state and a vacuum state to be completed by one dual-function chamber, thereby increasing the process chambers and improving the production efficiency of the semiconductor equipment.
Specifically, the semiconductor device provided in this embodiment further includes: a plurality of reaction chambers, a plurality of reaction chambers all articulate on transmission platform T. Referring to fig. 1, there are four reaction chambers (PM1, PM2, PM3, PM 4); further, the number of the reaction chambers is determined by the structure of the transfer platform T, and may be plural, and is not limited to four.
Specifically, as shown in fig. 3, the dual function chamber comprises: cavity 1, technology base 3 and sealing door 2.
The cavity 1 is provided with a film transfer port (not shown in the figure), and is respectively butted with respective film transfer ports of the equipment front-end module E and the transmission platform T. The sealing door 2 corresponds to the device of the film transferring port and is used for opening or sealing the film transferring port. And the process base 3 is arranged in the cavity 1 and is used for carrying out process treatment on the workpiece to be processed loaded on the process base. The dual function chamber is at atmospheric conditions when wafers are transferred between the front end module E of the apparatus and the dual function chamber, and at vacuum conditions when wafers are transferred between the transfer platform T and the dual function chamber. Because the gas mainly used by the cavity 1 is oxygen, special gas is not involved, the atmospheric vacuum state can be repeatedly switched, and only one wafer can be stored in the cavity 1; and the dual-function cavity is respectively isolated from the equipment front end module E and the transmission platform T by adopting a gate valve.
The dual-function cavity provided by the embodiment of the invention is positioned between the equipment front-end module and the transmission platform, and is provided with the sealing door, so that the conversion between the atmospheric state of the equipment front-end module and the vacuum state of the transmission platform can be facilitated; further, a process base is arranged in the cavity, and process functions can be achieved.
Further, in another embodiment of the present invention, the process function includes a photoresist stripping process for stripping a workpiece to be processed. The photoresist removing process is mainly used for removing photoresist on the surface of the wafer, the process is simple, after the photoresist removing process is completed by the photoresist removing device, the chamber is inflated to an atmospheric state, and then the wafer is transmitted to the front end module E of the equipment through a mechanical arm; furthermore, in the embodiment of the present invention, four reaction chambers may be provided in the semiconductor device, and compared with the existing semiconductor device, the semiconductor device provided in the embodiment of the present invention has a function of performing a photoresist stripping process on the dual-function chamber, and the dual-function chamber does not occupy a space of the reaction chamber, so that the semiconductor device can carry more reaction chambers, and the production efficiency of the semiconductor device is improved.
Further, in another embodiment of the present invention, referring to fig. 4, there are two dual function chambers. The two dual-function cavities are positioned between the equipment front-end module and the transmission platform and are arranged in parallel, a workpiece to be processed in the equipment front-end module can be transmitted to the transmission platform from any one cavity of the two dual-function cavities, and the workpiece to be processed in the transmission platform can also be transmitted to the equipment front-end module from any one cavity of the two dual-function cavities; furthermore, the working sequence of the two dual-function chambers can be reasonably set according to the process time, so that the maximum production efficiency is achieved. Of course, the number of the dual-function chambers may be more than two, and the number of the specific dual-function chambers may be determined by the process requirement configuration of the semiconductor device.
Further, in another embodiment of the present invention, the semiconductor apparatus further includes: and the detection device is used for detecting whether the workpiece is to be processed in the dual-function cavity. Specifically, since the dual function chamber has a relay function and a process function, which are incompatible, the dual function chamber can perform only one function at a time, when the dual function chamber is required to perform any one function, it is necessary to determine whether a wafer is in the dual function chamber by the detecting means in order to detect whether the dual function chamber is idle, and when there is no wafer, any one of the relay function and the process function can be performed.
In view of the semiconductor device, the present invention further provides a semiconductor process processing method, where the semiconductor process processing method adopts the semiconductor device in the foregoing embodiment, and as shown in fig. 5, a flowchart of the semiconductor process processing method provided in the embodiment of the present invention is provided, and in this embodiment, the semiconductor process processing method includes the following steps:
step 101: judging whether the dual-function cavity is to be processed or not; if yes, go on to step 101; otherwise, step 102 is performed.
Step 102: the dual-function cavity is switched to an air pressure state consistent with the workpiece to be processed input end, and the workpiece to be processed in the workpiece to be processed input end is input into the dual-function cavity.
Specifically, the air pressure state may be an atmospheric state or a vacuum state, for example, if the input end of the workpiece to be processed is an equipment front-end module, and the equipment front-end module is in the atmospheric state, the dual-function chamber is converted into the atmospheric state.
Specifically, the to-be-processed workpiece input end is an equipment front end module, and if the dual-function chamber has no to-be-processed workpiece, the dual-function chamber is switched to an atmospheric state.
Specifically, in another embodiment of the present invention, when the workpiece to be processed is transferred to the transfer platform, the dual-function chamber is switched to a vacuum state if the dual-function chamber has no workpiece to be processed.
According to the semiconductor process processing method provided by the embodiment of the invention, when the wafer in the equipment front-end module needs to be transferred to the transmission platform or before the wafer in the transmission platform needs to be transferred to the equipment front-end module, whether the workpiece to be processed is judged firstly, so that the transfer function and the process function of the dual-function chamber are ensured not to conflict, and the wafer transfer between the equipment front-end module and the transmission platform and the conversion between the atmospheric state and the vacuum state in the chamber are carried out on the basis of no conflict.
In one embodiment of the present invention, a photoresist strip process may be performed after the workpiece to be processed is introduced into the dual function chamber. .
Specifically, when it is determined that the dual-function chamber has no workpiece to be processed, the dual-function chamber may be switched to an atmospheric state, and the wafer in the front-end module of the apparatus may be transferred to the transfer platform through the dual-function chamber; or the dual function chamber may be switched to a vacuum state and the wafer in the transport platform may be transferred through the dual function chamber to the device front end module.
In the embodiment of the invention, whether the double-function cavity is processed or not is detected by detecting whether a wafer exists in the double-function cavity or not, so that the execution of the transfer function of the double-function cavity can be effectively ensured, the transfer function and the process function of the double-function cavity are not in conflict, the wafer transmission safety of the semiconductor equipment is ensured, and the efficiency of the semiconductor equipment is improved.
Further, regarding the semiconductor device shown in fig. 4, when there are two dual-function chambers, as shown in fig. 6, another flow chart of the semiconductor processing method according to the embodiment of the present invention is shown, and the semiconductor processing method according to the embodiment includes the following steps:
step 201: judging whether the two dual-function cavities are to be processed or not; if yes, go on to step 201; otherwise, step 202 is performed.
Step 202: any one of the two dual-function cavities without the workpiece to be processed is switched to the air pressure state consistent with the workpiece to be processed input end, and the workpiece to be processed in the workpiece to be processed input end is input into the dual-function cavity.
Specifically, the following describes in detail a semiconductor process flow of a semiconductor device;
when the wafer is transferred from the wafer conveying box to the front end module of the device, the detection device judges whether all the double-function cavities have wafers or not, if not, any double-function cavity without the wafer in the double-function cavities is converted to be in an atmospheric state, the wafer is transferred to the double-function cavity and then transferred to the transfer platform through the double-function cavity, if all the double-function cavities have the wafers, the detection device waits, the process judgment is carried out on whether all the double-function cavities have the wafers or not again, until the wafer is transferred to the transfer platform, the wafer in the transfer platform is transferred to the reaction cavity for process processing, the processed wafer is transferred to the transfer platform from the reaction cavity, at the moment, the detection unit judges whether all the double-function cavities have the wafers or not, if not, any double-function cavity without the wafer in the double-function cavities is converted to be in a vacuum state, and the wafer is transferred to the, and then transferred to the equipment front end module and then back to the pod, and if all dual function chambers are in process, wait, re-determine if there are wafers in all dual function chambers, and finally complete the process through the dual function chambers and transfer the wafers back to the pod.
According to the wafer transmission method provided by the embodiment of the invention, when the number of the two dual-function cavities is two, when the wafer in the front-end module of the equipment needs to be transmitted to the transmission platform, or before the wafer in the transmission platform needs to be transmitted to the front-end module of the equipment, whether the two dual-function cavities are both provided with the workpiece to be processed is judged, and the wafer transmission or the process can be carried out only when any one of the two dual-function cavities is not provided with the workpiece to be processed, so that the wafer transmission and process safety of the semiconductor equipment is ensured, and the efficiency of the semiconductor equipment is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A semiconductor device, comprising: equipment front end module and transmission platform, its characterized in that still includes: the dual-function cavity is arranged between the equipment front-end module and the transmission platform and has a transfer function and a process function; wherein the transfer function is to enable transfer of wafers between the equipment front end module and the transfer platform while transitioning the chamber between an atmospheric state and a vacuum state; the process function is to realize the process treatment of the workpiece to be processed.
2. The semiconductor device of claim 1, wherein the dual function chamber comprises:
the cavity is provided with two film transmission ports which are respectively butted with the respective film transmission ports of the equipment front-end module and the transmission platform;
the sealing door is arranged corresponding to the film conveying opening and is used for opening or sealing the film conveying opening; and
and the process base is used for realizing the process treatment of the workpiece to be processed borne on the process base.
3. The semiconductor device of claim 1, wherein the process function comprises a photoresist stripping process for stripping the workpiece to be processed.
4. A semiconductor device according to any of claims 1-3, wherein there are two dual function chambers.
5. The semiconductor device according to any one of claims 1 to 3, further comprising: a detection device;
the detection device is used for detecting whether a workpiece is to be processed in the dual-function chamber.
6. The semiconductor device according to any one of claims 1 to 3, further comprising: the reaction chambers are hung on the conveying platform.
7. A semiconductor process treatment method, characterized in that the semiconductor equipment of any one of claims 1 to 6 is used, the semiconductor process treatment method comprising:
judging whether the dual-function cavity is to be processed or not, if so, waiting and returning to continue the judging step; if not, the dual-function cavity is switched to the air pressure state consistent with the air pressure state of the workpiece to be processed conveying end, and the workpiece to be processed in the workpiece to be processed conveying end is conveyed into the dual-function cavity.
8. The semiconductor process treatment method of claim 7, wherein the workpiece to be processed input end is an equipment front end module, and the dual function chamber is switched to an atmospheric state if the dual function chamber has no workpiece to be processed.
9. The method of claim 7 wherein the workpiece to be processed transfer end is the transfer platen, and wherein the dual-function chamber is switched to a vacuum state if the dual-function chamber has no workpiece to be processed.
10. The method of claim 7, wherein a photoresist strip process is performed after the workpiece to be processed is introduced into the dual-function chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910421269.XA CN111968926A (en) | 2019-05-20 | 2019-05-20 | Semiconductor equipment and semiconductor processing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910421269.XA CN111968926A (en) | 2019-05-20 | 2019-05-20 | Semiconductor equipment and semiconductor processing method |
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| CN111968926A true CN111968926A (en) | 2020-11-20 |
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| CN201910421269.XA Pending CN111968926A (en) | 2019-05-20 | 2019-05-20 | Semiconductor equipment and semiconductor processing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114551308A (en) * | 2022-01-28 | 2022-05-27 | 上海广川科技有限公司 | Vacuum side wafer state obtaining method for semiconductor vacuum transmission system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050016454A1 (en) * | 1999-12-15 | 2005-01-27 | Applied Materials, Inc. | Dual substrate loadlock process equipment |
| US20070107598A1 (en) * | 2005-11-14 | 2007-05-17 | Jin-Goo Lee | Load-lock and semiconductor device manufacturing equipment comprising the same |
-
2019
- 2019-05-20 CN CN201910421269.XA patent/CN111968926A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050016454A1 (en) * | 1999-12-15 | 2005-01-27 | Applied Materials, Inc. | Dual substrate loadlock process equipment |
| US20070107598A1 (en) * | 2005-11-14 | 2007-05-17 | Jin-Goo Lee | Load-lock and semiconductor device manufacturing equipment comprising the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114551308A (en) * | 2022-01-28 | 2022-05-27 | 上海广川科技有限公司 | Vacuum side wafer state obtaining method for semiconductor vacuum transmission system |
| CN114551308B (en) * | 2022-01-28 | 2023-12-01 | 上海广川科技有限公司 | Vacuum side wafer state acquisition method for semiconductor vacuum transmission system |
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