CN111964800A - Temperature sensor, preparation method thereof and sensing device applying temperature sensor - Google Patents
Temperature sensor, preparation method thereof and sensing device applying temperature sensor Download PDFInfo
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- CN111964800A CN111964800A CN202010598521.7A CN202010598521A CN111964800A CN 111964800 A CN111964800 A CN 111964800A CN 202010598521 A CN202010598521 A CN 202010598521A CN 111964800 A CN111964800 A CN 111964800A
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- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- G—PHYSICS
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K15/00—Testing or calibrating of thermometers
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Abstract
The invention relates to the technical field of temperature sensors, in particular to a temperature sensor, a preparation method thereof and a sensing device applying the temperature sensor. The preparation method of the temperature sensor is provided, and the temperature sensor with self-calibration and characterization functions and capable of realizing in-situ self-heating is manufactured.
Description
Technical Field
The present invention relates to the field of temperature sensor technology, and more particularly, to a temperature sensor, a method for manufacturing the same, and a sensing device using the same.
Background
The temperature sensor has wide application prospect in a plurality of fields such as human health monitoring, manufacturing industry and biological medicine. For example, body temperature is an important indicator of body function, and often reflects whether a tissue or organ is at a normal level. In real life, extremely small temperature change (such as 0.1 ℃) is often used for indicating potential abnormal conditions, so that the development of a sensor capable of monitoring the extremely small temperature change has great significance for human health monitoring and actual life. At present, temperature sensors based on various thermosensitive materials, such as metals, inorganic ceramic materials, conductive polymers, Carbon Nanotubes (CNTs), graphene and the like, which have high thermal sensitivity, are reported, and for example, CN109632121A discloses a temperature sensor packaging structure based on conductive through holes and a preparation method thereof. However, in practical applications, when calibration is performed, the current temperature sensor needs to use a bulky external heating box or heating plate, which not only causes problems of high power consumption and high cost, but also increases potential safety hazards and reduces production efficiency. Meanwhile, in devices requiring high temperature operating conditions, the heater is often implemented by adding a wire after the temperature sensor is manufactured, which increases the complexity of the structure and process, and also leads to an increase in the volume and power consumption of the temperature sensor. Therefore, how to miniaturize the temperature sensor and the heater, optimize the device structure, and simplify the process flow without damaging the performance is a problem that is not solved at present.
Disclosure of Invention
The invention provides the temperature sensor, the preparation method thereof and the sensing device applying the temperature sensor, aiming at overcoming the problem of miniaturization of the heater of the temperature sensor in the prior art, wherein the micro heater is integrated on the temperature sensor, has the functions of self calibration and characterization, and realizes in-situ self heating.
In order to solve the technical problems, the invention adopts the technical scheme that: a temperature sensor comprises a substrate, a thermosensitive material, an electrode and a micro-heater, wherein the electrode is arranged on the substrate, the micro-heater is arranged under the substrate, and the thermosensitive material is arranged on the electrode.
In the scheme, the electrode is arranged on the substrate, the micro heater is arranged below the substrate, and the thermosensitive material is arranged on the electrode. The change of the temperature to be measured can cause the change of the carrier concentration in the thermosensitive material, and further cause the change of the current. When the temperature to be measured rises, the current carrier is activated, the concentration rises, and the current increases, and when the temperature to be measured falls, the activation degree of the current carrier is weakened, the concentration falls, and the current decreases, and the temperature is measured through the change of the current. The heater is used for calibrating and characterizing the temperature sensor, and the micro-heater supplies heat under the excitation of the direct current power supply due to the Joule effect, so that the heat-sensitive material is heated, the required temperature is reached, and then the temperature sensor is calibrated.
In one embodiment, the micro-heater includes a serpentine heating wire and a contact pad, the serpentine heating wire being connected to the contact pad. The snake-shaped heating wire of the micro-heater can increase the heating area of the micro-heater, and effectively heats the electrode arranged on the micro-heater.
In one embodiment, the electrodes are interdigitated electrodes.
In one embodiment, the thermally sensitive material is graphene. When the temperature rises, the charge carriers are thermally activated to influence the current flowing through the graphene, so that an electrical signal is generated, and the response of the graphene to the temperature to be measured is formed.
In one embodiment, the substrate is composed of a liquid crystal polymer or a silicon wafer with silicon dioxide grown on the surface. The liquid crystal polymer has good flexibility, and the temperature sensor on the substrate can still stably work in a bending deformation state.
A sensing device, a temperature sensor.
Preferably, the alarm device is further included and is connected with the temperature sensor. The alarm is connected with the temperature sensor, and when the temperature sensed by the temperature sensor exceeds a threshold value, the alarm can be used for alarming.
A preparation method of a temperature sensor comprises the following steps:
s1: preparing dispersion liquid by adopting a microwave plasma enhanced chemical vapor deposition method;
introducing mixed gas into a reaction chamber under a high-temperature condition, depositing on a metal substrate under the assistance of plasma to obtain three-dimensional porous graphene, dispersing the three-dimensional porous graphene in a solution, performing ultrasonic dispersion and centrifugation to form a dispersion liquid, and using the metal substrate to catalyze the formation of the three-dimensional porous graphene;
s2: preparing an electrode:
preparing an interdigital electrode on a substrate by photoetching and evaporation processes;
s3: preparing a micro heater:
preparing a micro-heater on the lower part of the substrate by photoetching and sputtering processes;
s4: integration of the heat sensitive material to the substrate:
and (3) dripping the dispersed liquid onto the interdigital electrodes, connecting gaps among the electrodes to form a thermosensitive material, forming a passage between the electrodes, and drying to obtain the temperature sensor.
In one embodiment, in step S1, the metal substrate is a Ni substrate, the solution is ethanol, the ultrasonic dispersion time is 10min to 30min, the centrifugal rotation number is 3000rpm to 4000rpm, and the duration is 10min to 30 min;
the specific steps of step S1 are:
introducing hydrogen and mixed gas C taking argon as carrier gas into a reaction chamber2H4O2The method comprises the steps of carrying out catalytic deposition on mixed gas by a Ni substrate at 400-500 ℃ in a plasma environment to obtain three-dimensional porous graphene, dispersing the obtained three-dimensional porous graphene in ethanol, and carrying out ultrasonic dispersion for 10-30 min, ultrasonic dispersion at 3000-4000 rpm and centrifugal treatment for 10-30 min to obtain a dispersion liquid.
In one embodiment, in step S2, a photoresist is spin-coated on the substrate, the interdigital electrode pattern is photo-etched, and cadmium with a thickness of 5nm to 20nm is evaporated as a transition layer;
continuously evaporating 100nm-300nm Au or Pt to prepare an Au or Pt interdigital electrode;
the width of each electrode and the width of a gap between the electrodes are both 20-50 mu m; in step S3, spin-coating photoresist on the other side of the substrate, photoetching to obtain a micro-heater pattern, and evaporating or sputtering 5-20 nm cadmium as a transition layer; continuously evaporating Au or Pt with the thickness of 150nm-450nm to prepare an Au or Pt micro-heater;
the width size between the snake-shaped heating wires of the micro-heater is 20-50 mu m, and the area of the contact pad is 0.5mm2～2mm2。
Compared with the prior art, the invention has the following advantages:
1. self-calibration and characterization. Traditional temperature sensor adopts external heating board or hot box to calibrate and characterize, brings the big consumption problem, and has increased the safety risk. The micro-heater is integrated on the temperature sensor, and the in-situ self-heating is realized by controlling the resistance and the voltage of the micro-heater to reach the required temperature.
2. Device integration and miniaturization. Under the micro-nano scale, the electrodes, the heater and the like are integrated together, so that the volume of the device is reduced, the process flow is simplified, the miniaturization of the device is realized, and a plurality of temperature sensors can be simultaneously prepared to obtain the array. Self-heating and miniaturization enable the sensor to achieve low power consumption, even when the micro-heater provides a temperature of 100 ℃, the power consumption is less than 1.5W.
2. The resolution is high. The temperature sensor provided by the invention can obtain obvious response even if the temperature is only raised by 0.1 ℃, has high sensitivity and can be applied to the field of high-precision detection.
3. The substrate of the temperature sensor provided by the invention has good flexibility, so that the sensor can still stably work in a bending deformation state. In addition, the sensor can sensitively sense the temperature change of the skin of the human body, and can be applied to wearable electronic devices.
Drawings
FIG. 1 is a schematic structural diagram of a temperature sensor according to an embodiment of the present invention;
FIG. 2 is a flow chart of a temperature sensor according to an embodiment of the present invention;
FIG. 3 is a microscopic topography of a three-dimensional porous graphene according to an embodiment of the present invention;
FIG. 4 a is a diagram showing the relationship between the current and temperature of the micro-heater and the voltage across the micro-heater according to the embodiment of the present invention; b is a graph of the relationship between the resistance and the temperature of the micro-heater in the embodiment of the invention;
fig. 5 is a graph of the relationship between the thermal index and the reduction time of the three-dimensional porous graphene obtained through different reduction times in the embodiment of the present invention;
FIG. 6 is a graph of response change of a three-dimensional porous graphene temperature sensor to 55 ℃ within two months according to an embodiment of the invention;
fig. 7 is a photograph of a three-dimensional porous graphene temperature sensor according to an embodiment of the present invention in a bent state;
fig. 8 is a response curve of the three-dimensional porous graphene temperature sensor according to the embodiment of the invention when a human finger is touched and removed.
Detailed Description
The drawings are for illustration purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the terms may be understood by those skilled in the art according to specific circumstances.
The first embodiment is as follows:
as shown in fig. 1 and fig. 2, the present invention provides a temperature sensor, which includes a substrate 1, a thermosensitive material 4, an electrode 2, and a micro-heater, wherein the electrode 2 is an interdigital electrode, the electrode 2 is disposed on the substrate 1, the micro-heater is disposed under the substrate 1, and the thermosensitive material 4 is disposed on the electrode 2. An electrode 2 is provided on a substrate 1, a micro-heater is provided below the substrate 1, and a thermosensitive material 4 is provided on the electrode 2. The micro heater comprises a snake-shaped heating wire 5 and a contact pad 3, the snake-shaped heating wire 5 is connected with the contact pad 3, and the micro heater is excited by a direct current power supply and supplies heat due to the joule effect, so that the heat sensitive material 4 is heated, the required temperature is reached, and then the temperature sensor is calibrated.
The change of the temperature to be measured can cause the change of the carrier concentration in the thermosensitive material 4, and further cause the change of the current. When the temperature to be measured rises, the current carrier is activated, the concentration rises, and the current increases, and when the temperature to be measured falls, the activation degree of the current carrier is weakened, the concentration falls, and the current decreases, and the temperature is measured through the change of the current. The heater is used for calibrating and characterizing the temperature sensor, and the micro-heater heats the thermosensitive material 4 under the excitation of the direct-current power supply due to Joule effect, so that the temperature required by the heating is reached and the temperature sensor is calibrated.
In this embodiment, the thermosensitive material 4 is graphene, and the graphene has a defect site, a three-dimensional porous structure, and a functional group. When the temperature is increased, the graphene surface generates thermal adsorption, the charge carriers are activated, the concentration is increased, and the mobility is improved. The change of the charge flow can be reflected by parameters such as the current of the graphene, so that the response of the graphene to the temperature to be measured is formed. The graphene comprises at least one of original graphene, graphene reduced for 0.5 hour and graphene reduced for 2 hours, and can be a mixture of several kinds of graphene, and the graphene reduced for 2 hours is preferred. The graphene has structural defects and functional groups, and can reduce the carrier concentration of the graphene, so that higher sensitivity can be achieved in temperature sensing. Meanwhile, the graphene can also have a three-dimensional porous structure, and the remarkably increased surface area is beneficial to the processes of heat adsorption, transfer and charge transmission. The temperature to be measured is a certain temperature range higher than room temperature, and is preferably 26-103 ℃.
Part of oxygen-containing groups of the graphene can be removed through heating reduction for a certain time, so that the graphene has better deoxidation resistance and heat resistance, the temperature sensor is favorable for keeping a stable working state, the heating time is 1-5 hours, and the heating temperature is 70-130 ℃.
Graphene has a negative temperature coefficient of resistance (NTC), exhibiting semiconductor-like properties. The forbidden bandwidth of the intrinsic graphene is zero, and the graphene obtained by the chemical vapor deposition method has residual oxygen-containing groups, so that the forbidden bandwidth of the graphene is opened, and the NTC is shown.
The three-dimensional porous structure is realized by a chemical vapor deposition method, and carbon source gas is introduced into a high-temperature reaction chamber and is deposited under the catalysis of a substrate to obtain the three-dimensional porous graphene. In general, the specific surface area of two-dimensional graphene is far from a theoretical value due to stacking of graphene sheets. The surface area of the three-dimensional porous graphene obtained by the chemical vapor deposition method is remarkably increased, so that the three-dimensional porous graphene is beneficial to a thermal adsorption process and a charge transfer process.
The chemical vapor deposition process is enhanced with a microwave plasma, preferably hydrogen. The reaction chamber is preferably a quartz tube. The carbon source can be organic substances such as methane, ethanol and the like, and is preferably methyl formate (C)2H4O2) And argon gas was used as a carrier gas. The substrate is in a foam shape, and may be a metal such as copper or nickel, and preferably nickel (Ni). The temperature is between 400 ℃ and 500 ℃, preferably 450 ℃. And (3) cracking carbon atoms from the carbon source gas under the action of the microwave plasma at the temperature, and then catalyzing the carbon atoms to be deposited into graphene by the metal substrate. The graphene obtained by the chemical vapor deposition method has a three-dimensional porous structure, and also has a large number of defect sites and oxygen-containing groups, which reduce the carrier concentration of the graphene, so that when the sensing temperature rises, the carriers are activated, and the current of a detection circuit is remarkably increased, which is beneficial to obtaining higher sensitivity and faster recovery speed.
The substrate 1 is composed of a liquid crystal polymer or a silicon wafer with silicon dioxide growing on the surface, the liquid crystal polymer has a porous structure and good flexibility, so that the temperature sensor has good flexibility, and the temperature sensor is made into a flexible device and can still stably work in a bending deformation state. Conventional deformation behavior (such as stretching and bending) does not result in damage to the temperature sensor. In the deformation state, the response of the sensor to the same temperature does not change obviously.
In this embodiment, the temperature sensor has a micro-scale characteristic, and a plurality of sensors may be fabricated on the basis of the same substrate 1 to form a sensor array on the same substrate 1.
As shown in fig. 4, when a dc voltage is applied across the micro-heater, the metal generates heat due to the joule effect. As the applied voltage changes, the magnitude of the current in the circuit and the temperature to which the heat is applied also changes. The current magnitude and resulting temperature magnitude versus voltage across the microheater is shown in fig. 4 a. When the voltage across the micro-heater is 33.875V, a temperature of 103 ℃ can be provided. In FIG. 4, b is the relationship between the resistance of the micro-heater and the temperature, and the characteristic is close to that of Au. Therefore, by adjusting the resistance and voltage of the micro-heater, the substrate 1 can be adjusted to a desired temperature.
A sensing device comprises a temperature sensor and an alarm, wherein the alarm is connected with the temperature sensor. The alarm is connected with the temperature sensor, and when the temperature sensed by the temperature sensor exceeds a threshold value, the alarm can be used for alarming.
A preparation method of a temperature sensor comprises the following steps:
s1: preparing dispersion liquid by adopting a microwave plasma enhanced chemical vapor deposition method;
introducing mixed gas into a reaction chamber at 400-500 ℃, depositing on a metal substrate under the assistance of plasma to obtain three-dimensional porous graphene, dispersing the three-dimensional porous graphene in a solution, and performing ultrasonic dispersion and centrifugation to form a dispersion liquid, wherein the metal substrate is used for catalyzing the formation of the three-dimensional porous graphene;
introducing hydrogen and mixed gas C taking argon as carrier gas into a reaction chamber2H4O2The three-dimensional porous graphene is obtained by the catalytic deposition of the mixed gas by a Ni substrate under the high-temperature and plasma environment, the obtained three-dimensional porous graphene is dispersed in ethanol, ultrasonic dispersion is carried out for 10min to 30min, and then centrifugal treatment is carried out for 3000rpm to 4000rpm and 10min to 30min, so that dispersion liquid is obtained. As shown in fig. 3, in the obtained dispersion liquid, the three-dimensional porous graphene shows a flower-like morphology.
S2: preparing an electrode 2:
preparing an interdigital electrode on a substrate 1 by photoetching and evaporation processes;
the method comprises the following specific steps: spin-coating photoresist on the substrate 1, photoetching an interdigital electrode pattern, and evaporating chromium with the thickness of 5nm-20nm as a transition layer; continuously evaporating 100nm-300nm Au or Pt to prepare an Au or Pt interdigital electrode;
s3: preparing a micro heater:
preparing a micro-heater on the lower part of the substrate 1 by photoetching and sputtering processes;
the method comprises the following specific steps: spin-coating photoresist on the other surface of the substrate 1 opposite to the interdigital electrode, photoetching a micro-heater pattern, and evaporating or sputtering 5-20 nm of chromium as a transition layer; continuously evaporating Au or Pt with the thickness of 150nm-450nm to prepare an Au or Pt micro-heater; the width dimension between the snake-shaped heating wires 5 of the micro-heater is 20-50 mu m, and the area of the contact pad 3 is 0.5mm2～2mm2。
S4: the heat sensitive material 4 is integrated to the substrate 1:
and dripping the dispersed liquid onto the interdigital electrodes, connecting gaps among the electrodes 2 to form a thermosensitive material 4, forming a passage among the electrodes 2, and drying to obtain the temperature sensor.
Example two:
the present embodiment is similar to the first embodiment, except that the method for manufacturing a temperature sensor in the present embodiment includes the following steps:
s1: the reaction chamber is a quartz tube reaction chamber, and C taking hydrogen and argon as carrier gas is introduced into the quartz tube reaction chamber2H4O2The preparation method comprises the following steps of (1) carrying out catalytic deposition on mixed gas by a Ni substrate at 400-500 ℃ in a plasma environment to obtain three-dimensional porous graphene, dispersing the obtained three-dimensional porous graphene in ethanol, and centrifuging for 10-30 min at an ultrasonic dispersion speed of 3000-3500 rpm and a duration of 10-30 min to obtain a dispersion liquid;
in step S1, the ratio of the flow rate of the gas as the plasma source to the flow rate of the gas as the carbon source is 18-25: 1, and it is preferable that the plasma source is 190sccm and the carbon source is 10 sccm. The high temperature required for the reaction is between 400 ℃ and 500 ℃, preferably 450 ℃.
S2: spin-coating photoresist on the substrate 1, photoetching an interdigital electrode pattern, and evaporating or sputtering 5-20 nm of chromium (Cr) as a transition layer, preferably 10 nm;
continuously evaporating 100nm-300nm Au or Pt to prepare Au or Pt interdigital electrodes, preferably 180nm, wherein the width of each electrode 2 of the interdigital electrodes and the width of a gap between the electrodes 2 are between 20 microns and 50 microns, the width of each electrode 2 is preferably 30 microns, and the width of the gap between the electrodes 2 is preferably 20 microns;
s3: coating photoresist on the other surface of the substrate 1 opposite to the interdigital electrode in a spinning mode, photoetching a micro-heater pattern, and evaporating or sputtering 5nm-20nm of chromium (Cr) as a transition layer, preferably 10 nm;
continuously evaporating 150nm-450nm Au or Pt to prepare an Au or Pt micro heater, preferably 300nm, wherein the width of the metal wire in the middle part is 20 μm-50 μm, preferably 30 μm, and the area of the contact pad 3 at two ends is 0.5mm2～2mm2Preferably 1mm, of2；
S4: and dripping the obtained dispersion liquid onto the interdigital electrodes by adopting a dripping method, connecting gaps among the electrodes 2 to form a thermosensitive material 4, forming a passage among the electrodes 2, and drying to obtain the temperature sensor.
S5: the obtained temperature sensor reduces graphene under the condition that a micro heater provides 103 ℃, and the reduction time is 0.5 h.
Example three:
the present embodiment is similar to embodiment 2, except that in this embodiment, the reduction time for reducing graphene in step S5 is 2 h.
Example 1, example 2, and example 3 are reduced graphene for 0h, 0.5h, and 2h, respectively. As shown in fig. 5, the thermal index B of the pristine graphene obtained in example 1 (i.e. reduced for 0h) is maximal and reaches 3193K. The temperature index decreased slightly with increasing reduction time. Meanwhile, the resistance temperature coefficient obtained by calculation also shows a similar trend, and the original graphene is the largest and is 3.55 percent K-1。
As shown in fig. 6, when the thermal sensitivity of the sensor obtained in example 3 is detected every ten days, the response value of the graphene to 55 ℃ is not changed significantly within two months, which indicates that the graphene has good stability.
As shown in fig. 7, the sensor obtained in example 3 was bent, and the sensor was not broken, and maintained a normal operation state even when deformed.
As shown in FIG. 8, when a finger was touched to the sensor obtained in example 3, the current was immediately increased, and when the finger was moved away, the current was immediately decreased, indicating that the sensor could perform real-time temperature detection on human skin.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. The temperature sensor is characterized by comprising a substrate, a thermosensitive material, an electrode and a micro-heater, wherein the electrode is arranged on the substrate, the micro-heater is arranged under the substrate, and the thermosensitive material is arranged on the electrode.
2. The temperature sensor of claim 1, wherein the micro-heater comprises a serpentine heating wire and a contact pad, the serpentine heating wire being connected to the contact pad.
3. The temperature sensor of claim 1, wherein the electrodes are interdigitated electrodes.
4. The temperature sensor of claim 1, wherein the thermally sensitive material is graphene.
5. The temperature sensor according to claim 1, wherein the substrate is composed of a liquid crystal polymer or a silicon wafer on which silicon dioxide is grown.
6. A sensing device comprising a temperature sensor according to any one of claims 1 to 5.
7. The sensing device of claim 6, further comprising an alarm, wherein the alarm is connected to the temperature sensor.
8. The preparation method of the temperature sensor is characterized by comprising the following steps of:
s1: preparing dispersion liquid by adopting a microwave plasma enhanced chemical vapor deposition method;
introducing mixed gas into a reaction chamber at 400-500 ℃, depositing on a metal substrate under the assistance of plasma to obtain three-dimensional porous graphene, dispersing the three-dimensional porous graphene in a solution, and performing ultrasonic dispersion and centrifugation to form a dispersion liquid, wherein the metal substrate is used for catalyzing the formation of the three-dimensional porous graphene;
s2: preparing an electrode:
preparing an interdigital electrode on a substrate by photoetching and evaporation processes;
s3: preparing a micro heater:
preparing a micro-heater on the lower part of the substrate by photoetching and sputtering processes;
s4: integration of the heat sensitive material to the substrate:
and dripping the dispersed liquid onto the interdigital electrodes, connecting gaps among the electrodes to form a thermosensitive material, forming a passage between the electrodes, and drying to obtain the temperature sensor.
9. The method for manufacturing a temperature sensor according to claim 8, wherein in the step S1, the metal substrate is a Ni substrate, the solution is ethanol, the ultrasonic dispersion time is 10min to 30min, the centrifugal rotation number is 3000rpm to 4000rpm, and the duration is 10min to 30 min;
the specific steps of step S1 are:
introducing hydrogen and mixed gas C taking argon as carrier gas into a reaction chamber2H4O2The mixed gas is catalyzed and deposited by a Ni substrate at 400-500 ℃ in a plasma environment to obtain three-dimensional porous graphene, the obtained three-dimensional porous graphene is dispersed in ethanol, ultrasonic dispersion is carried out for 10-30 min, and then centrifugal treatment is carried out at 3000-4000 rpm for 10-30 min to obtain dispersion liquid.
10. The method for manufacturing a temperature sensor according to claim 8, wherein in step S2, a photoresist is spin-coated on the substrate, the interdigital electrode pattern is photo-etched, and cadmium with a thickness of 5nm to 20nm is evaporated as a transition layer;
continuously evaporating 100nm-300nm Au or Pt to prepare an Au or Pt interdigital electrode;
the width of each electrode of the interdigital electrodes and the width of gaps among the electrodes are both between 20 and 50 microns;
in the step S3, spin-coating photoresist on the other surface of the substrate, photoetching a micro-heater pattern, and evaporating or sputtering 5-20 nm cadmium as a transition layer; continuously evaporating Au or Pt with the thickness of 150nm-450nm to prepare an Au or Pt micro-heater;
the width size between the snake-shaped heating wires of the micro-heater is 20-50 mu m, and the area of the contact pad is 0.5mm2～2mm2。
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