CN111954378B - Copper oxide layer reduction repairing agent for copper bonding pad surface and normal-temperature in-situ reduction repairing method - Google Patents
Copper oxide layer reduction repairing agent for copper bonding pad surface and normal-temperature in-situ reduction repairing method Download PDFInfo
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- CN111954378B CN111954378B CN202010699427.0A CN202010699427A CN111954378B CN 111954378 B CN111954378 B CN 111954378B CN 202010699427 A CN202010699427 A CN 202010699427A CN 111954378 B CN111954378 B CN 111954378B
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 80
- 239000010949 copper Substances 0.000 title claims abstract description 80
- 230000009467 reduction Effects 0.000 title claims abstract description 63
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 50
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 239000005751 Copper oxide Substances 0.000 title claims abstract description 32
- 229910000431 copper oxide Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 57
- 230000008439 repair process Effects 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000003466 welding Methods 0.000 claims abstract description 23
- 239000008367 deionised water Substances 0.000 claims abstract description 21
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims abstract description 19
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011975 tartaric acid Substances 0.000 claims abstract description 19
- 235000002906 tartaric acid Nutrition 0.000 claims abstract description 19
- FINXTJFVUXNTOQ-UHFFFAOYSA-N 2-hexyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCC)=NC2=C1 FINXTJFVUXNTOQ-UHFFFAOYSA-N 0.000 claims abstract description 18
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims abstract description 18
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims abstract description 18
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000012964 benzotriazole Substances 0.000 claims abstract description 18
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims abstract description 18
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 238000007598 dipping method Methods 0.000 claims abstract description 13
- 238000002845 discoloration Methods 0.000 claims abstract description 7
- 239000004744 fabric Substances 0.000 claims abstract description 4
- CQVPPLWYIDMWDA-UHFFFAOYSA-N OS(=O)(=O)c1ccccc1.CCCCCCCCCCCC[Na] Chemical compound OS(=O)(=O)c1ccccc1.CCCCCCCCCCCC[Na] CQVPPLWYIDMWDA-UHFFFAOYSA-N 0.000 claims description 12
- 239000004745 nonwoven fabric Substances 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000003223 protective agent Substances 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 11
- YCSMVPSDJIOXGN-UHFFFAOYSA-N CCCCCCCCCCCC[Na] Chemical compound CCCCCCCCCCCC[Na] YCSMVPSDJIOXGN-UHFFFAOYSA-N 0.000 abstract description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 description 46
- 239000010410 layer Substances 0.000 description 36
- 238000002791 soaking Methods 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0085—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Treatment Of Metals (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The invention provides a copper oxide layer reduction repairing agent on the surface of a copper bonding pad and a normal-temperature in-situ reduction repairing method, wherein the reduction repairing agent comprises the following raw materials in parts by mass: 1 to 20 parts of tartaric acid, 1 to 20 parts of acetic acid, 1 to 20 parts of thiourea, 1 to 20 parts of sodium hypophosphite, 0.1 to 1 part of n-dodecyl phosphate, 0.1 to 1 part of n-dodecyl sodium besylate, 0.1 to 1 part of 2-hexyl benzimidazole, 0.1 to 1 part of benzotriazole, 0.01 to 0.1 part of copper acetate, 0.01 to 0.1 part of hexadecyl trimethyl ammonium bromide and 60 to 95 parts of deionized water. During repair, dipping a fabric in a reduction repair liquid, and lightly wiping the surface of the copper bonding pad with the oxide layer until the copper natural color of the surface of the copper bonding pad is recovered; and removing the reduction repair liquid on the surface of the copper bonding pad before welding. The reduction repairing agent can be directly used for in-situ repairing on products at normal temperature, does not need to rework a printed circuit board, is particularly suitable for products with larger size (10 m), saves cost, is simple and convenient to operate, has good effect of treating the problem of oxidative discoloration of copper pads of the printed circuit board, and can effectively improve welding quality.
Description
Technical Field
The invention belongs to the technical field of surface treatment, and particularly relates to a copper oxide layer reduction repairing agent for a copper bonding pad surface and a normal-temperature in-situ reduction repairing method.
Background
With the development of the electronic industry, the yield of the printed circuit board is increased year by year, and the state of the copper bonding pad directly influences the welding quality of the subsequent electronic assembly of the printed circuit board. At present, in the printed circuit industry, an OSP organic protective agent is mainly used for performing anti-oxidation treatment on copper pads of a printed circuit board.
When the OSP preparation process fluctuates or the storage environment and the storage time of the printed circuit board exceed the specified requirements due to reasons, the protective layer on the surface of the copper pad will be in gradual failure, the copper pad of the printed circuit board will have local oxidation discoloration, the welding reliability of the product will be greatly reduced, and the product usually needs to be reworked or directly scrapped. At present, some large-size products have the characteristic of long assembly period, part of interfaces are assembled and solidified, and if the rest parts are oxidized, the in-situ treatment cannot be carried out, and the whole products are required to be disassembled and reworked or are directly scrapped.
The working center of gravity of the current industry is mainly used for improving the environmental tolerance and the preparation process stability of the OSP, and the in-situ treatment method of the copper surface oxide layer is limited to physical polishing, so that the method is difficult to quantitatively control, and the deformation damage of the ultrathin copper layer can be caused to influence the reliability of subsequent welding. Ex-situ methods, such as grinding or chemical pickling, require disassembly for rework and can also cause thinning of the copper layer to damage the copper layer, affecting the reliability of subsequent welds. At present, limited and detectable copper reducing agents and nondestructive reduction technologies are adopted to repair the oxide layer on the copper surface by adopting a soaking element mode, and heating or high temperature is usually required during soaking, so that the method cannot be directly implemented on products. In particular, a continuous flexible printed circuit board such as a flat type inter-board cable for solar cell wing power transmission in the aerospace field has a length of about 30m, and when the exposed bonding pad is oxidized, in-situ reduction repair cannot be performed by adopting a currently known technical method because other space environment protection plating layers exist on the surface of the cable.
Disclosure of Invention
In order to overcome the defects in the prior art, the inventor performs intensive research and provides a copper oxide layer reduction repairing agent and a normal-temperature in-situ reduction repairing method for the surface of a copper bonding pad, and the reduction repairing agent and the normal-temperature in-situ reduction repairing method can be used for simply and economically treating the problem of oxidative discoloration of the surface of the copper bonding pad of a printed circuit board, so that the welding quality is effectively improved without causing thinning of the copper layer to damage the copper layer, and the copper bonding pad is particularly suitable for products with larger size (more than 10 m), thereby completing the invention.
The technical scheme provided by the invention is as follows:
In the first aspect, the reducing and repairing agent for the copper oxide layer on the surface of the copper bonding pad comprises the following raw materials in parts by mass: 1 to 20 parts of tartaric acid, 1 to 20 parts of acetic acid, 1 to 20 parts of thiourea, 1 to 20 parts of sodium hypophosphite, 0.1 to 1 part of n-dodecyl phosphate, 0.1 to 1 part of n-dodecyl sodium besylate, 0.1 to 1 part of 2-hexyl benzimidazole, 0.1 to 1 part of benzotriazole, 0.01 to 0.1 part of copper acetate, 0.01 to 0.1 part of hexadecyl trimethyl ammonium bromide and 60 to 95 parts of deionized water.
In a second aspect, a normal temperature in situ reduction repair method for a copper oxide layer on a copper pad surface is implemented by the reduction repair agent in the first aspect, and includes the following steps:
step 1, preparing a copper oxide layer reduction repair liquid according to a set mass part;
Step 2, dipping a fabric in a reduction repair liquid, and lightly wiping the surface of the copper bonding pad with an oxide layer until the copper natural color of the surface of the copper bonding pad is recovered;
And 3, removing the reduction repair liquid on the surface of the copper bonding pad before welding.
According to the copper oxide layer reduction repairing agent and the normal-temperature in-situ reduction repairing method for the surface of the copper bonding pad, the copper oxide layer reduction repairing agent and the normal-temperature in-situ reduction repairing method have the following beneficial effects:
the reducing repairing agent is prepared from specific components in a specific proportion, so that the repairing method integrates copper in-situ reduction and protection after reduction, is suitable for rapidly repairing copper bonding pads of products in situ at normal temperature, does not need heating or soaking treatment, and is particularly suitable for products with larger size (more than 10 m). When the copper pad surface of the printed circuit board should fail and local oxidation discoloration occurs, the reworking operation of grinding or pickling is not needed, the method can be used for carrying out wiping treatment on the color-changing area on the surface of the copper pad in situ to reduce the copper oxide, the main body of the reaction is reduction reaction, the copper pad surface is not damaged, and the oxidation discoloration phenomenon of the copper pad is eliminated after the treatment by the method, so that the weldability is greatly improved.
Detailed Description
The features and advantages of the present invention will become more apparent and clear from the following detailed description of the invention.
According to the first aspect of the invention, a copper oxide layer reduction repairing agent for the surface of a copper bonding pad is provided, which comprises the following raw materials in parts by mass: 1 to 20 parts of tartaric acid, 1 to 20 parts of acetic acid, 1 to 20 parts of thiourea, 1 to 20 parts of sodium hypophosphite, 0.1 to 1 part of n-dodecyl phosphate, 0.1 to 1 part of n-dodecyl sodium besylate, 0.1 to 1 part of 2-hexyl benzimidazole, 0.1 to 1 part of benzotriazole, 0.01 to 0.1 part of copper acetate, 0.01 to 0.1 part of hexadecyl trimethyl ammonium bromide and 60 to 95 parts of deionized water.
Preferably, the reducing repair agent comprises the following raw materials in parts by mass: 3 to 12 parts of tartaric acid, 3 to 12 parts of acetic acid, 3 to 12 parts of thiourea, 4 to 12 parts of sodium hypophosphite, 0.2 to 0.8 part of n-dodecyl phosphate, 0.2 to 0.8 part of n-dodecyl sodium benzenesulfonate, 0.3 to 0.8 part of 2-hexyl benzimidazole, 0.3 to 0.8 part of benzotriazole, 0.05 to 0.1 part of copper acetate, 0.05 to 0.1 part of cetyltrimethylammonium bromide and 60 to 80 parts of deionized water.
Preferably, the reducing repair agent comprises the following raw materials in parts by mass: 3 to 5 parts of tartaric acid, 3 to 6 parts of acetic acid, 3 to 8 parts of thiourea, 4 to 6 parts of sodium hypophosphite, 0.2 to 0.8 part of n-dodecyl phosphate, 0.5 to 0.8 part of sodium n-dodecyl benzene sulfonate, 0.3 to 0.4 part of 2-hexyl benzimidazole, 0.3 to 0.4 part of benzotriazole, 0.05 to 0.1 part of copper acetate, 0.05 to 0.1 part of cetyltrimethylammonium bromide and 60 to 80 parts of deionized water.
Preferably, the reducing repair agent comprises the following raw materials in parts by mass: 5 parts of tartaric acid, 5 parts of acetic acid, 4 parts of thiourea, 4 parts of sodium hypophosphite, 0.5 part of n-dodecyl phosphoric acid, 0.5 part of n-dodecyl sodium benzenesulfonate, 0.4 part of 2-hexyl benzimidazole, 0.4 part of benzotriazole, 0.1 part of copper acetate, 0.1 part of hexadecyl trimethyl ammonium bromide and 80 parts of deionized water.
Preferably, the reducing repair agent comprises the following raw materials in parts by mass: 3 parts of tartaric acid, 6 parts of acetic acid, 3 parts of thiourea, 6 parts of sodium hypophosphite, 0.8 part of n-dodecyl phosphoric acid, 0.5 part of n-dodecyl sodium benzenesulfonate, 0.3 part of 2-hexyl benzimidazole, 0.3 part of benzotriazole, 0.05 part of copper acetate, 0.05 part of hexadecyl trimethyl ammonium bromide and 80 parts of deionized water.
Preferably, the reducing repair agent comprises the following raw materials in parts by mass: 3 parts of tartaric acid, 3 parts of acetic acid, 8 parts of thiourea, 4 parts of sodium hypophosphite, 0.2 part of n-dodecyl phosphoric acid, 0.8 part of n-dodecyl sodium benzenesulfonate, 0.4 part of 2-hexyl benzimidazole, 0.4 part of benzotriazole, 0.1 part of copper acetate, 0.1 part of hexadecyl trimethyl ammonium bromide and 80 parts of deionized water.
In the components of the reduction repairing agent, tartaric acid and acetic acid mainly provide an acidic environment, and the reduction reaction of a copper oxide layer on the surface of a copper bonding pad can be realized in an acid-base environment, but polyimide is generally adopted as an insulating layer in a flexible printed circuit, and the insulating effect is reduced in an alkaline environment, so that the acidic environment is adopted; and the tartaric acid is matched with the acetic acid, so that the rapid repair can be realized on the premise of not damaging the copper plating layer. The thiourea in the components can form a complex with copper ions to capture the copper ions in the oxide layer, and the thiourea is slightly dissolved in alcohol to facilitate removal, so that subsequent welding is not affected, and the welding tension is reduced. Sodium hypophosphite is a mild reducing agent and can react with copper oxide at normal temperature without heating to promote the reaction, so that the reducing repairing agent and the repairing method have wide applicability. N-dodecyl phosphate provides the acidity of the composition and improves the temperature resistance of the OSP system, sodium n-dodecyl benzene sulfonate mainly performs an additional cleaning function on the surface of the welding disc, 2-hexyl benzimidazole and benzotriazole mainly repair the OSP system, copper acetate is used for activating copper ions in an oxide layer, cetyl trimethyl ammonium bromide is used as a surface dispersing agent, and a small amount of the surface dispersing agent can improve the reduction repair efficiency in consideration of non-soaking environment.
According to a second aspect of the present invention, there is provided a method for in-situ reduction repair of a copper oxide layer on a copper pad at room temperature, which is implemented by the reduction repair agent according to the first aspect, and includes:
step 1, preparing a copper oxide layer reduction repair liquid according to a set mass part;
Step 2, dipping a fabric in a reduction repair liquid, and lightly wiping the surface of the copper bonding pad with an oxide layer until the copper natural color of the surface of the copper bonding pad is recovered;
And 3, removing the reduction repair liquid on the surface of the copper bonding pad before welding.
In step 1, the ratio of raw materials in the reduction repair liquid is the same as that described in the first aspect, and will not be described again here.
In the step 2, the non-woven fabric is used for dipping the prepared reduction repair liquid, and the part of the surface of the copper bonding pad, which is provided with the oxide layer, is lightly wiped in one direction until the original copper color of the surface of the copper bonding pad is recovered.
In the step 3, the specific implementation method for removing the reduction repair liquid on the surface of the copper bonding pad before welding comprises the following steps: and dipping the non-woven fabric into the alcohol solution, wiping the surface of the copper bonding pad for about 3-5 times, performing an acid-base test (such as a pH test paper wet by deionized water) on the surface of the copper bonding pad, and repeating the alcohol wiping operation until the pH value is more than or equal to 7.0 if the detection result shows that the pH value is less than 7.0.
Examples
Example 1
A copper oxide layer reduction repairing agent and normal temperature in situ reduction repairing method for copper bonding pad surface are as follows:
Step 1, preparing a copper oxide layer reduction repairing agent according to the mass portions, wherein 5g of tartaric acid, 5g of acetic acid, 4g of thiourea, 4g of sodium hypophosphite, 0.5g of n-dodecyl phosphate, 0.5g of n-dodecyl sodium benzenesulfonate, 0.4g of 2-hexyl benzimidazole, 0.4g of benzotriazole, 0.1g of copper acetate, 0.1g of hexadecyl trimethyl ammonium bromide and 80g of deionized water are stirred and mixed uniformly.
And 2, dipping the prepared copper oxide layer reduction repairing agent by using non-woven fabrics at room temperature, and lightly wiping the surface of the copper pad with partial color change according to one direction until the copper pad returns to the original color of copper.
And 3, wiping the surface of the copper pad by dipping the non-woven fabric in an alcohol solution before welding until the test result of the wide pH test paper wetted by deionized water shows that the pH value is more than or equal to 7.0.
A plurality of samples (15) are welded by adopting a resistance butt welding mode, and the tension value of a single welding point (phi 2 mm) is larger than 30N.
Example 2
A copper oxide layer reduction repairing agent and normal temperature in situ reduction repairing method for copper bonding pad surface are as follows:
Step 1, preparing a copper oxide layer reduction repairing agent according to the mass portions, wherein 3g of tartaric acid, 6g of acetic acid, 3g of thiourea, 6g of sodium hypophosphite, 0.8g of n-dodecyl phosphate, 0.5g of n-dodecyl sodium benzenesulfonate, 0.3g of 2-hexyl benzimidazole, 0.3g of benzotriazole, 0.05g of copper acetate, 0.05g of hexadecyl trimethyl ammonium bromide and 80g of deionized water are stirred and mixed uniformly.
And 2, dipping the prepared copper oxide layer reduction repairing agent by using non-woven fabrics at room temperature, and lightly wiping the surface of the copper pad with partial color change according to one direction until the copper pad returns to the original color of copper.
And 3, wiping the surface of the copper pad by dipping the non-woven fabric in an alcohol solution before welding until the test result of the wide pH test paper wetted by deionized water shows that the pH value is more than or equal to 7.0.
A plurality of samples (15) are welded by adopting a resistance butt welding mode, and the tension value of a single welding point (phi 2 mm) is larger than 30N.
Example 3
A copper oxide layer reduction repairing agent and normal temperature in situ reduction repairing method for copper bonding pad surface are as follows:
Step 1, preparing a copper oxide layer reduction repairing agent according to the mass portions, wherein 3g of tartaric acid, 3g of acetic acid, 8g of thiourea, 4g of sodium hypophosphite, 0.2g of n-dodecyl phosphate, 0.8g of n-dodecyl sodium benzenesulfonate, 0.4g of 2-hexyl benzimidazole, 0.4g of benzotriazole, 0.1g of copper acetate, 0.1g of hexadecyl trimethyl ammonium bromide and 80g of deionized water are stirred and mixed uniformly.
And 2, dipping the prepared copper oxide layer reduction repairing agent by using non-woven fabrics at room temperature, and lightly wiping the surface of the copper pad with partial color change according to one direction until the copper pad returns to the original color of copper.
And 3, wiping the surface of the copper pad by dipping the non-woven fabric in an alcohol solution before welding until the test result of the wide pH test paper wetted by deionized water shows that the pH value is more than or equal to 7.0.
A plurality of samples (15) are welded by adopting a resistance butt welding mode, and the tension value of a single welding point (phi 2 mm) is larger than 30N.
The invention has been described in detail in connection with the specific embodiments and exemplary examples thereof, but such description is not to be construed as limiting the invention. It will be understood by those skilled in the art that various equivalent substitutions, modifications or improvements may be made to the technical solution of the present invention and its embodiments without departing from the spirit and scope of the present invention, and these fall within the scope of the present invention. The scope of the invention is defined by the appended claims.
What is not described in detail in the present specification is a well known technology to those skilled in the art.
Claims (9)
1. The copper oxide layer reduction repairing agent is characterized in that an OSP organic protective agent is adopted for oxidation prevention treatment on the surface of a copper bonding pad, when partial oxidation discoloration occurs due to OSP failure on the surface of the copper bonding pad of a printed circuit board, reworking operation of grinding or pickling is not needed, and the copper oxide layer reduction repairing agent is adopted for wiping a discoloration area on the surface of the bonding pad to reduce copper oxide:
the copper oxide layer reduction repairing agent on the surface of the copper bonding pad comprises the following raw materials in parts by mass:
1-20 parts of tartaric acid, 1-20 parts of acetic acid, 1-20 parts of thiourea, 1-20 parts of sodium hypophosphite, 0.1-1 part of n-dodecyl phosphate, 0.1-1 part of n-dodecyl sodium benzenesulfonate, 0.1-1 part of 2-hexyl benzimidazole, 0.1-1 part of benzotriazole, 0.01-0.1 part of copper acetate, 0.01-0.1 part of hexadecyl trimethyl ammonium bromide and 60-95 parts of deionized water.
2. The reducing repair agent according to claim 1, characterized in that the reducing repair agent comprises the following raw materials in parts by mass:
3-12 parts of tartaric acid, 3-12 parts of acetic acid, 3-12 parts of thiourea, 4-12 parts of sodium hypophosphite, 0.2-0.8 part of n-dodecyl phosphate, 0.2-0.8 part of n-dodecyl sodium benzenesulfonate, 0.3-0.8 part of 2-hexyl benzimidazole, 0.3-0.8 part of benzotriazole, 0.05-0.1 part of copper acetate, 0.05-0.1 part of hexadecyl trimethyl ammonium bromide and 60-80 parts of deionized water.
3. The reducing repair agent according to claim 1, characterized in that the reducing repair agent comprises the following raw materials in parts by mass:
3-5 parts of tartaric acid, 3-6 parts of acetic acid, 3-8 parts of thiourea, 4-6 parts of sodium hypophosphite, 0.2-0.8 part of n-dodecyl phosphate, 0.5-0.8 part of sodium n-dodecyl benzene sulfonate, 0.3-0.4 part of 2-hexyl benzimidazole, 0.3-0.4 part of benzotriazole, 0.05-0.1 part of copper acetate, 0.05-0.1 part of hexadecyl trimethyl ammonium bromide and 60-80 parts of deionized water.
4. The reducing repair agent according to claim 1, characterized in that the reducing repair agent comprises the following raw materials in parts by mass:
5 parts of tartaric acid, 5 parts of acetic acid, 4 parts of thiourea, 4 parts of sodium hypophosphite, 0.5 part of n-dodecyl phosphoric acid, 0.5 part of n-dodecyl sodium benzenesulfonate, 0.4 part of 2-hexyl benzimidazole, 0.4 part of benzotriazole, 0.1 part of copper acetate, 0.1 part of hexadecyl trimethyl ammonium bromide and 80 parts of deionized water.
5. The reducing repair agent according to claim 1, characterized in that the reducing repair agent comprises the following raw materials in parts by mass:
3 parts of tartaric acid, 6 parts of acetic acid, 3 parts of thiourea, 6 parts of sodium hypophosphite, 0.8 part of n-dodecyl phosphoric acid, 0.5 part of n-dodecyl sodium benzenesulfonate, 0.3 part of 2-hexyl benzimidazole, 0.3 part of benzotriazole, 0.05 part of copper acetate, 0.05 part of hexadecyl trimethyl ammonium bromide and 80 parts of deionized water.
6. The reducing repair agent according to claim 1, characterized in that the reducing repair agent comprises the following raw materials in parts by mass:
3 parts of tartaric acid, 3 parts of acetic acid, 8 parts of thiourea, 4 parts of sodium hypophosphite, 0.2 part of n-dodecyl phosphoric acid, 0.8 part of n-dodecyl sodium benzenesulfonate, 0.4 part of 2-hexyl benzimidazole, 0.4 part of benzotriazole, 0.1 part of copper acetate, 0.1 part of hexadecyl trimethyl ammonium bromide and 80 parts of deionized water.
7. A method for in-situ reduction repair of a copper oxide layer on a copper pad surface at normal temperature, which is characterized by adopting the reduction repair agent in one of claims 1 to 6 to implement in-situ reduction repair of the copper oxide layer at normal temperature, comprising the following steps:
Step 1, preparing a copper oxide layer reduction repairing agent according to a set mass part;
step 2, dipping a fabric in a reducing repairing agent, and lightly wiping the surface of the copper bonding pad with the oxide layer until the copper natural color of the surface of the copper bonding pad is recovered;
And 3, removing the reducing repairing agent on the surface of the copper bonding pad before welding.
8. The reduction repair method according to claim 7, wherein in step 2, the non-woven fabric is used to dip the prepared reduction repair agent, and the part of the copper pad surface where the oxide layer exists is lightly wiped in one direction until the copper pad surface recovers the original copper color.
9. The reduction repair method according to claim 7, wherein in step 3, the specific implementation method for removing the reduction repair agent on the surface of the copper pad before welding is as follows: and dipping the non-woven fabric into an alcohol solution, wiping the surface of the copper bonding pad, performing an acid-base test on the surface of the copper bonding pad, and repeating the alcohol wiping operation until the pH value is more than or equal to 7.0 if the detection result shows that the pH value is less than 7.0.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000002426A1 (en) * | 1998-07-01 | 2000-01-13 | Fry's Metals, Inc. D/B/A Alpha Metals, Inc. | Post-treatment for copper on printed circuit boards |
| CN105143517A (en) * | 2013-04-22 | 2015-12-09 | 高级技术材料公司 | Copper cleaning and protection formulations |
| CN105671538A (en) * | 2016-01-08 | 2016-06-15 | 滁州嘉泰科技有限公司 | Compound organic solderability preservatives (OSP) treating agent for lead-free printed circuit board (PCB) |
| CN108431301A (en) * | 2015-12-23 | 2018-08-21 | 埃托特克德国有限公司 | Copper and copper alloy surface etching solution |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4997516A (en) * | 1989-07-10 | 1991-03-05 | Edward Adler | Method for improving adherence of copper foil to resinous substrates |
| US5861076A (en) * | 1991-07-19 | 1999-01-19 | Park Electrochemical Corporation | Method for making multi-layer circuit boards |
| CN110724943A (en) * | 2019-11-29 | 2020-01-24 | 四川英创力电子科技股份有限公司 | Palladium-free activating solution before chemical nickel plating on copper surface, preparation method and nickel plating method |
-
2020
- 2020-07-20 CN CN202010699427.0A patent/CN111954378B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000002426A1 (en) * | 1998-07-01 | 2000-01-13 | Fry's Metals, Inc. D/B/A Alpha Metals, Inc. | Post-treatment for copper on printed circuit boards |
| CN105143517A (en) * | 2013-04-22 | 2015-12-09 | 高级技术材料公司 | Copper cleaning and protection formulations |
| CN108431301A (en) * | 2015-12-23 | 2018-08-21 | 埃托特克德国有限公司 | Copper and copper alloy surface etching solution |
| CN105671538A (en) * | 2016-01-08 | 2016-06-15 | 滁州嘉泰科技有限公司 | Compound organic solderability preservatives (OSP) treating agent for lead-free printed circuit board (PCB) |
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