CN111952138A - 一种原位原子层沉积扫描电子显微镜 - Google Patents

一种原位原子层沉积扫描电子显微镜 Download PDF

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CN111952138A
CN111952138A CN202010823490.0A CN202010823490A CN111952138A CN 111952138 A CN111952138 A CN 111952138A CN 202010823490 A CN202010823490 A CN 202010823490A CN 111952138 A CN111952138 A CN 111952138A
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atomic layer
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张跃飞
屠金磊
张泽
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Zhejiang Qiyue Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16FSPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F15/00Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
    • F16F15/02Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16MFRAMES, CASINGS OR BEDS OF ENGINES, MACHINES OR APPARATUS, NOT SPECIFIC TO ENGINES, MACHINES OR APPARATUS PROVIDED FOR ELSEWHERE; STANDS; SUPPORTS
    • F16M7/00Details of attaching or adjusting engine beds, frames, or supporting-legs on foundation or base; Attaching non-moving engine parts, e.g. cylinder blocks

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Abstract

本发明公开一种原位原子层沉积扫描电子显微镜,涉及原位测试领域,包括机架,所述机架上设置有电镜腔室,所述电镜腔室一侧设置有开口,所述电镜腔室一侧的开口端固定连接有密封阀,所述密封阀远离所述电镜腔室的一侧固定安装有原子层沉积室,所述原子层沉积室远离所述密封阀的一侧固定安装有水平设置的磁力杆,所述磁力杆内活动穿设有磁力杆轴,所述磁力杆轴端部能够水平运动于原子层沉积室或电镜腔室内;所述电镜腔室顶部密封安装有电子枪,所述电镜腔室底部密封连接有分子泵。本发明能够进行原位原子层沉积的测试,且能对原子层沉积薄膜后材料的微观形貌全程动态监测。

Description

一种原位原子层沉积扫描电子显微镜
技术领域
本发明涉及原位测试技术领域,特别是涉及一种原位原子层沉积扫描电子显微镜。
背景技术
原位测试技术的应用对材料学的发展起到了推动作用,材料测试过程中,通过电子显微镜对材料微观形貌进行全程动态监测,能够更深入地揭示各类材料及其制品的微观形貌。
工业生产中为了改善各种各样材料的性能,进行表面涂层是应用最广泛的方法之一,目前制备方法主要有物理气相沉积(PVD)、化学气相沉积(CVD)、溶胶-凝胶法(sol-gel)、原子层沉积(ALD)。其中,原子层沉积技术作为一种特殊的化学气相沉积技术,制备的涂层相比于其他方法具有多种优点。原子层沉积(ALD)技术正逐渐成为了微电子器件制造,半导体领域的必要技术。
目前,已有的装置无法进行原位原子层沉积的测试,且不能对原子层沉积薄膜后材料的微观形貌全程动态监测,因此开发原位原子层沉积测试系统,对研究材料薄膜的形貌具有重要意义。
发明内容
本发明的目的是提供一种原位原子层沉积扫描电子显微镜,以解决上述现有技术存在的问题,能够进行原位原子层沉积的测试,且能对原子层沉积薄膜后材料的微观形貌全程动态监测。
为实现上述目的,本发明提供了如下方案:
本发明提供一种原位原子层沉积扫描电子显微镜,包括机架,所述机架上设置有电镜腔室,所述电镜腔室一侧设置有开口,所述电镜腔室一侧的开口端固定连接有密封阀,所述密封阀远离所述电镜腔室的一侧固定安装有原子层沉积室,所述原子层沉积室远离所述密封阀的一侧固定安装有水平设置的磁力杆,所述磁力杆内活动穿设有磁力杆轴,所述磁力杆轴端部能够水平运动于原子层沉积室或电镜腔室内;所述电镜腔室顶部密封安装有电子枪,所述电镜腔室底部密封连接有分子泵。
可选的,所述机架上固定安装有减震台,所述电镜腔室固定设置于所述减震台上;所述减震台上开设有通孔,所述分子泵通过所述减震台的通孔与所述电镜腔室连接。
可选的,所述电镜腔室侧壁上设置有观察窗,所述观察窗采用透明材质制成。
可选的,所述机架底部对称设置有四个地脚,所述地脚的高度能够调节。
可选的,所述机架底部安装有滚轮,所述滚轮设置于相邻两个所述地脚之间。
可选的,所述电镜腔室底部对称设置有四个垫块,所述电镜腔室通过垫块与所述减震台固定连接。
本发明相对于现有技术取得了以下技术效果:
本发明结构简单、使用方便,能够进行原位原子层沉积的测试,且能对原子层沉积薄膜后材料的微观形貌全程动态监测;减震台能够消除振动以免影响设备。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1为本发明原位原子层沉积扫描电子显微镜结构示意图;
图2为本发明原位原子层沉积扫描电子显微镜内试样镀膜状态示意图;
图3为本发明原位原子层沉积扫描电子显微镜内试样形貌观测状态示意图;
其中,1为机架、2为电镜腔室、3为密封阀、4为原子层沉积室、5为磁力杆、6为磁力杆轴、7为电子枪、8为分子泵、9为减震台、10为地脚、11为滚轮、12为垫块、13为试样。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明的目的是提供一种原位原子层沉积扫描电子显微镜,以解决上述现有技术存在的问题,能够进行原位原子层沉积的测试,且能对原子层沉积薄膜后材料的微观形貌全程动态监测。
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图和具体实施方式对本发明作进一步详细的说明。
本发明提供一种原位原子层沉积扫描电子显微镜,如图1-图3所示,包括机架1,机架1上设置有电镜腔室2,电镜腔室2一侧设置有开口,电镜腔室2一侧的开口端固定连接有密封阀3,密封阀3远离电镜腔室2的一侧固定安装有原子层沉积室4,原子层沉积室4远离密封阀3的一侧固定安装有水平设置的磁力杆5,磁力杆5内活动穿设有磁力杆轴6,磁力杆轴6端部能够水平运动于原子层沉积室4或电镜腔室2内;电镜腔室2顶部密封安装有电子枪7,电镜腔室2底部密封连接有分子泵8。
进一步优选的,机架1上固定安装有减震台9,电镜腔室2固定设置于减震台9上;减震台9上开设有通孔,分子泵8通过减震台9的通孔与电镜腔室2连接。电镜腔室2侧壁上设置有观察窗,观察窗采用透明材质制成。机架1底部对称设置有四个地脚10,地脚10的高度能够调节。机架1底部安装有滚轮11,滚轮11设置于相邻两个地脚10之间。电镜腔室2底部对称设置有四个垫块12,电镜腔室2通过垫块12与减震台9固定连接。
本发明使用时首先将试样13放在磁力杆轴6的一端,在原子层沉积室4里面镀膜,镀完薄膜打开密封阀3,推动磁力杆轴6将试样13传递到电镜腔室2里面,使试样13位于电子枪7下方,进行形貌观测,观测完成后,拉动磁力杆轴6将试样13传递回原子层沉积室4进行第二次镀膜后取出试样13。分子泵8用于电镜腔室2抽真空,减震台9可以消除振动以免影响设备。
本发明中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的一般技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处。综上所述,本说明书内容不应理解为对本发明的限制。

Claims (6)

1.一种原位原子层沉积扫描电子显微镜,其特征在于:包括机架,所述机架上设置有电镜腔室,所述电镜腔室一侧设置有开口,所述电镜腔室一侧的开口端固定连接有密封阀,所述密封阀远离所述电镜腔室的一侧固定安装有原子层沉积室,所述原子层沉积室远离所述密封阀的一侧固定安装有水平设置的磁力杆,所述磁力杆内活动穿设有磁力杆轴,所述磁力杆轴端部能够水平运动于原子层沉积室或电镜腔室内;所述电镜腔室顶部密封安装有电子枪,所述电镜腔室底部密封连接有分子泵。
2.根据权利要求1所述的原位原子层沉积扫描电子显微镜,其特征在于:所述机架上固定安装有减震台,所述电镜腔室固定设置于所述减震台上;所述减震台上开设有通孔,所述分子泵通过所述减震台的通孔与所述电镜腔室连接。
3.根据权利要求1所述的原位原子层沉积扫描电子显微镜,其特征在于:所述电镜腔室侧壁上设置有观察窗,所述观察窗采用透明材质制成。
4.根据权利要求1所述的原位原子层沉积扫描电子显微镜,其特征在于:所述机架底部对称设置有四个地脚,所述地脚的高度能够调节。
5.根据权利要求4所述的原位原子层沉积扫描电子显微镜,其特征在于:所述机架底部安装有滚轮,所述滚轮设置于相邻两个所述地脚之间。
6.根据权利要求2所述的原位原子层沉积扫描电子显微镜,其特征在于:所述电镜腔室底部对称设置有四个垫块,所述电镜腔室通过垫块与所述减震台固定连接。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1607636A (zh) * 2003-08-06 2005-04-20 应用材料有限公司 利用整合度量工具监测制程的稳定度
US20080274282A1 (en) * 2007-02-14 2008-11-06 Bent Stacey F Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
CN108461417A (zh) * 2018-01-17 2018-08-28 北京北方华创微电子装备有限公司 半导体设备
CN109671666A (zh) * 2017-10-14 2019-04-23 应用材料公司 用于beol互连的ald铜与高温pvd铜沉积的集成
CN110534405A (zh) * 2018-05-23 2019-12-03 台湾积体电路制造股份有限公司 处理工件的工作站及方法
CN111033712A (zh) * 2017-08-03 2020-04-17 应用材料以色列公司 用于移动基板的方法和系统
CN111272792A (zh) * 2020-03-24 2020-06-12 深圳市速普仪器有限公司 电镜样品前处理设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1607636A (zh) * 2003-08-06 2005-04-20 应用材料有限公司 利用整合度量工具监测制程的稳定度
US20080274282A1 (en) * 2007-02-14 2008-11-06 Bent Stacey F Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
CN111033712A (zh) * 2017-08-03 2020-04-17 应用材料以色列公司 用于移动基板的方法和系统
CN109671666A (zh) * 2017-10-14 2019-04-23 应用材料公司 用于beol互连的ald铜与高温pvd铜沉积的集成
CN108461417A (zh) * 2018-01-17 2018-08-28 北京北方华创微电子装备有限公司 半导体设备
CN110534405A (zh) * 2018-05-23 2019-12-03 台湾积体电路制造股份有限公司 处理工件的工作站及方法
CN111272792A (zh) * 2020-03-24 2020-06-12 深圳市速普仪器有限公司 电镜样品前处理设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
G. JEEVANANDAM , ET AL.: "‘Cleanroom’ in SEM" *

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