CN111951662A - Physical information hiding structure based on size difference of structural units and preparation method thereof - Google Patents
Physical information hiding structure based on size difference of structural units and preparation method thereof Download PDFInfo
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- CN111951662A CN111951662A CN202010496000.0A CN202010496000A CN111951662A CN 111951662 A CN111951662 A CN 111951662A CN 202010496000 A CN202010496000 A CN 202010496000A CN 111951662 A CN111951662 A CN 111951662A
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- G09F3/00—Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
- G09F3/02—Forms or constructions
- G09F3/0291—Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time
- G09F3/0294—Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time where the change is not permanent, e.g. labels only readable under a special light, temperature indicating labels and the like
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- G—PHYSICS
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Abstract
The invention discloses a physical information hiding structure based on size difference of structural units and a preparation method thereof, wherein the physical information hiding structure comprises a substrate and a metal reflecting layer which are stacked from bottom to top, a plurality of structural units are arranged on the metal reflecting layer, and each structural unit comprises a dielectric layer arranged on the metal reflecting layer and a metal particle semi-continuous film covering the upper surface of the dielectric layer; the structure unit comprises a hidden information unit and an adjacent unit, wherein the absolute value of the difference between the characteristic sizes of the hidden information unit and the adjacent unit is 0-20 nm, and the absolute value of the difference between the characteristic sizes is not 0. Under a common light source, the hidden information unit and the adjacent unit of the physical information hiding structure of the invention present similar colors, and have higher secrecy and security; and the characteristic size of the structural unit is less than 400nm, the spatial information capacity is very high, the hidden information capacity is large, and the application prospect is wide.
Description
Technical Field
The invention relates to the technical field of information hiding, in particular to a physical information hiding structure based on size difference of structural units and a preparation method thereof.
Background
The physical information hiding technology is a technology for hiding information by using a physical method, includes a hidden ink technology, a microdot technology (microdot) and the like, and is widely applied to the fields of anti-counterfeiting, property protection, secret communication and the like, for example, hidden anti-counterfeiting information is added into money to improve safety, and hidden property information is added into automobile parts to prevent vehicles from being stolen.
However, the conventional physical information hiding technology has a small information capacity and low security when used for hiding private information, and it is necessary to develop a physical information hiding structure having a large hidden information capacity and high security.
Disclosure of Invention
In order to overcome the defects of small hidden information capacity and low safety in the prior art, the invention provides the physical information hiding structure based on the size difference of the structural units, and the provided physical information hiding structure has the advantages of large hidden information capacity, high safety and wide application prospect.
The invention also aims to provide a preparation method of the physical information hiding structure.
In order to solve the technical problems, the invention adopts the technical scheme that:
a physical information hiding structure based on size difference of structural units comprises a substrate and a metal reflecting layer which are stacked from bottom to top, wherein the metal reflecting layer is provided with a plurality of structural units, and each structural unit comprises a dielectric layer arranged on the metal reflecting layer and a metal particle semi-continuous film covering the upper surface of the dielectric layer; each structural unit is provided with a hole which penetrates through the dielectric layer and the metal particle semi-continuous film along the direction vertical to the metal reflecting layer; defining the aperture of the hole as the characteristic size of the structural unit to which the hole belongs; the distance between the centers of the holes of any two adjacent structural units is larger than the characteristic size of any one structural unit and is smaller than 400 nm; the shape of any two structural units is the same;
the structure unit comprises a hidden information unit and an adjacent unit, wherein the absolute value of the difference between the characteristic sizes of the hidden information unit and the adjacent unit is 0-20 nm, and the absolute value of the difference between the characteristic sizes is not 0.
Preferably, the structure unit further comprises a camouflage unit for forming camouflage information, and an absolute value of a difference between feature sizes of the camouflage unit and the hidden information unit is greater than 20 nm.
The principle is as follows:
the hidden information unit, the adjacent unit and the camouflage unit on the metal reflecting layer form a pattern. Under a common light source, the hidden information unit and the adjacent unit present similar colors, the hidden information cannot be directly detected by naked eyes and a microscope, and only the pattern formed by the camouflage unit (namely the camouflage information formed by the camouflage unit) is presented. If there is no disguising element, no pattern will be present.
Under a narrow-band light source or a monochromatic light source with a proper central wavelength, the hidden information unit and the adjacent units show brightness difference, and the pattern formed by the hidden information unit (namely the hidden information formed by the hidden information unit) can be observed by naked eyes or a camera.
Therefore, under a common light source, the hidden information unit and the adjacent unit of the physical information hiding structure of the invention present similar colors, the hidden information can not be directly detected by naked eyes and a microscope, and the invention has higher secrecy and safety. The hidden information can only be extracted under a narrow-band light source or a monochromatic light source with a specific and proper center wavelength. Moreover, the physical information hiding structure has a large hidden information capacity because the feature size of the structural unit is less than 400nm and the physical information hiding structure has a high information capacity in space.
In the present application, the hidden information unit refers to a structure unit with hidden information; the adjacent unit refers to a structural unit without hidden information, and under a common light source, the color of the adjacent unit is similar to that of the hidden information unit.
The substrate may be a flat-surfaced substrate as is conventional in the art.
Preferably, the substrate is a silicon wafer or a glass sheet.
The metal reflecting layer can be made of a metal material which is silver white in a normal condition.
Preferably, the metal reflective layer is made of aluminum or silver.
Preferably, the thickness of the metal reflective layer is greater than 40 nm.
Preferably, the dielectric layer is a cured electronic glue. The electronic glue of the solidified electronic glue can be ZEP electronic glue, ARP electronic glue or PMMA electronic glue. Preferably, the thickness of the dielectric layer is 150-1200 nm.
The metal particle semi-continuous film can be prepared from metal which absorbs visible light and is solid at normal temperature.
Preferably, the metal particle semi-continuous film is made of aluminum, silver, gold or nickel.
Preferably, the structural units are closely arranged on the metal reflective layer.
Preferably, the dielectric layers of any two adjacent structural units are connected with each other to form a whole.
Preferably, the metal particle semi-continuous films of any two adjacent structural units are connected with each other to form a whole.
Preferably, the dielectric layers in all the structural units on the metal reflecting layer are integrally prepared.
Preferably, the metal particle semi-continuous film in all the structural units on the metal reflecting layer is integrally prepared.
The invention also provides a preparation method of the physical information hiding structure, which comprises the following steps:
s1, cleaning a substrate;
s2, preparing a metal reflecting layer: preparing a metal reflecting layer on the substrate by a thermal evaporation device, an electron beam evaporation device or a sputtering instrument;
s3, spin coating of electron beam glue: spin coating electron beam glue on the metal reflecting layer;
s4, manufacturing a layout: manufacturing a layout for electron beam etching with information to be hidden by using drawing software;
s5, electron beam etching and developing: exposing the pattern of the layout in the step S4 on the metal reflecting layer spin-coated with the electron beam glue by using electron beam etching equipment, and then developing by using a developer to obtain a developed substrate;
s6, sputtering a metal particle semi-continuous film: and sputtering a metal particle semi-continuous film on the surface of the developed substrate to obtain the physical information hiding structure.
Specifically, in step S1, the substrate is immersed in acetone, the whole is placed in an ultrasonic cleaning machine for ultrasonic cleaning for 5-10 minutes, then the acetone is changed into isopropanol and then ultrasonic cleaning is carried out for 5-10 minutes, then the isopropanol is changed into water and then ultrasonic cleaning is carried out for 5-10 minutes, finally the silicon wafer is taken out, and the surface of the silicon wafer is dried by a nitrogen gun. The isopropanol may be replaced by ethanol.
The electron beam paste in step S3 may be a ZEP electron beam paste. The thickness of the electron beam paste in step S3 may be 150-1200 nm.
The drawing software in the step S4 may be L-edit software, Matlab software, or KLayout software.
The sputtering in step S6 is performed by a sputter.
Preferably, the current for sputtering in step S6 is 3-150 mA, and the time is 20-350S.
The invention also protects a hidden information extraction method of the physical information hiding structure, which comprises the following steps: irradiating the physical information hiding structure by using a narrow-band light source or a monochromatic light source to extract hidden information; the bandwidth of the narrow-band light source is less than or equal to 30 nm;
the wavelength of the monochromatic light source is within +/-40 nm near the wave trough wavelength of the reflection spectrum of the structural unit with the hidden information;
the wavelength of the narrow-band light source is within +/-30 nm near the wave bottom wavelength of the reflection spectrum of the structural unit with the hidden information.
Compared with the prior art, the invention has the beneficial effects that:
under a common light source, the hidden information unit and the adjacent unit of the physical information hiding structure of the invention present similar colors, the hidden information can not be directly detected by naked eyes and a microscope, the invention has higher secrecy and safety, and the hidden information can be extracted only under a specific narrow-band light source or a monochromatic light source with proper central wavelength; and the characteristic size of the structural unit is less than 400nm, the spatial information capacity is very high, the hidden information capacity is large, and the application prospect is wide.
Drawings
Fig. 1 is a schematic structural diagram of a metal reflective layer, a dielectric layer and a metal particle semi-continuous film in a physical information hiding structure according to the present invention.
Fig. 2 shows that the physical information hiding structure of embodiment 1 of the present invention shows disguised information under a normal light source.
Fig. 3 shows that the physical information hiding structure of embodiment 1 of the present invention extracts hidden information under a narrow-band light source (bandwidth 10nm) with a center wavelength of 500 nm.
In fig. 1, from bottom to top, a metal reflective layer, a dielectric layer and a metal particle semi-continuous film are sequentially arranged, and the metal reflective layer, the dielectric layer and the metal particle semi-continuous film are in a sandwich structure.
Detailed Description
The present invention will be further described with reference to the following embodiments.
The raw materials in the examples are all commercially available;
reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Example 1
The embodiment provides a physical information hiding structure based on structural unit size difference, which comprises a substrate and a metal reflecting layer which are stacked from bottom to top, wherein the metal reflecting layer is provided with a plurality of structural units. As shown in fig. 1, the structural unit includes a dielectric layer disposed on the metal reflective layer and a semi-continuous film of metal particles covering the upper surface of the dielectric layer; as shown in FIG. 1, each structural unit is provided with a hole penetrating through the dielectric layer and the semi-continuous film of metal particles in a direction perpendicular to the metal reflective layer. The aperture of the hole is defined as the characteristic size of the structural unit to which the hole belongs. Any two structural units have the same shape, and in the embodiment, the radial section of the hole is a circle.
The substrate can be a silicon wafer or a glass sheet; specifically, the substrate in this embodiment is a silicon wafer.
The metal reflecting layer can be prepared from aluminum or silver; specifically, in this embodiment, the metal reflective layer is made of aluminum, that is, the metal reflective layer is an aluminum thin film.
The thickness of the metal reflecting layer is more than 40 nm; specifically, the thickness of the metal reflective layer in this embodiment is 100 nm.
The dielectric layer is solidified ZEP electronic glue. The thickness of the dielectric layer can be 150-1200 nm; specifically, the thickness of the dielectric layer in this embodiment is 360 nm.
The metal particle semi-continuous film can be prepared from aluminum, silver, gold or nickel; specifically, the semi-continuous film of metal particles in this example was prepared from aluminum.
The characteristic size of the structural unit is less than 400 nm; specifically, the feature size of the structural unit in this embodiment is less than 100 nm.
The distance between the centers of the holes of any two adjacent structural units is larger than the characteristic size of any one structural unit, but smaller than 400nm, and the distance between the centers is 300nm in the embodiment.
The structure unit includes a hidden information unit and a neighboring unit, the absolute value of the difference between the feature sizes of the hidden information unit and the neighboring unit is 0-20 nm, and the absolute value of the difference between the feature sizes is not 0. Specifically, in this embodiment, the absolute value of the difference between the feature sizes of the hidden information unit and the neighboring unit is 10nm, the feature size of the hidden information unit is 65nm, and the feature size of the neighboring unit is 75 nm.
In this embodiment, the structure unit further includes a camouflage unit for forming camouflage information, an absolute value of a difference between feature sizes of the camouflage unit and the hidden information unit is greater than 20nm, and the feature size of the camouflage unit is 190 nm.
The information extraction method comprises the following steps: and a narrow-band light source or a monochromatic light source with a proper central wavelength is used as an illuminating light source of the sample, the observation is carried out by human eyes or the recording is carried out by a camera, and the hidden information is extracted.
The physical information hiding structure of the embodiment shows only camouflage information of the sample under a common light source, as shown in fig. 2; after the light source is changed to a narrow-band light source (bandwidth 10nm) with a center wavelength of 500nm, hidden information can be extracted, such as a two-dimensional code shown in a dashed box in fig. 3.
Example 2
The present embodiment provides a method for preparing a physical information hiding structure based on size difference of structural units in embodiment 1, including the following steps:
s1, cleaning a substrate: namely, cleaning a silicon wafer, and washing the silicon wafer by using acetone to obtain a wafer with a thickness of 1X 1cm2Immersing the silicon wafer, putting the whole silicon wafer into an ultrasonic cleaning machine for ultrasonic cleaning for 5 minutes, then changing acetone into isopropanol and then ultrasonically cleaning for 5 minutes, then changing the isopropanol into water and ultrasonically cleaning for 5 minutes, finally taking out the silicon wafer, and drying the surface of the silicon wafer by using a nitrogen gun.
S2, preparing a metal reflecting layer: namely evaporating an aluminum film, and evaporating an aluminum film with the thickness of 100nm on the cleaned silicon wafer by using a thermal evaporation device.
S3, spin coating of electron beam glue: and spin-coating a layer of ZEP electronic glue with the thickness of about 360nm on the substrate plated with aluminum by using a spin coater.
S4, manufacturing a layout: and manufacturing a layout for electron beam etching with information to be hidden by using L-edit software. Each cell of the layout is a geometric figure with the minimum size characteristic smaller than 300nm, the center distance of adjacent cells is 300nm, wherein the cell with hidden information has a size difference of 10nm compared with the adjacent cells, and the cell with the structure size difference of more than 20nm compared with the cell with hidden information is used for forming camouflage information. The unit with hidden information refers to a hidden information unit. The unit for forming disguised information means a disguising unit.
S5, electron beam etching and developing: and exposing the pattern of the layout in the step S4 on the metal reflecting layer spin-coated with the electron beam glue by using electron beam etching equipment, and developing by using a developer to obtain a developed substrate.
S6, sputtering a metal particle semi-continuous film: and (3) putting the substrate subjected to the electron beam etching and developing into a sputtering instrument, and sputtering an aluminum film on the surface of the substrate, wherein the sputtering current is 100mA, and the sputtering time is 30 s. The obtained film is a metal particle semi-continuous film, so that the formed final structure is a sandwich structure comprising the metal particle semi-continuous film, a dielectric layer with a hole structure unit and a bottom metal reflecting layer, as shown in fig. 1. Thereby, the physical type information hiding structure of embodiment 1 was obtained.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A physical information hiding structure based on size difference of structural units is characterized by comprising a substrate and a metal reflecting layer which are stacked from bottom to top, wherein the metal reflecting layer is provided with a plurality of structural units, and each structural unit comprises a dielectric layer arranged on the metal reflecting layer and a metal particle semi-continuous film covering the upper surface of the dielectric layer; each structural unit is provided with a hole which penetrates through the dielectric layer and the metal particle semi-continuous film along the direction vertical to the metal reflecting layer; defining the aperture of the hole as the characteristic size of the structural unit to which the hole belongs; the distance between the centers of the holes of any two adjacent structural units is larger than the characteristic size of any one structural unit and is smaller than 400 nm; the shape of any two structural units is the same;
the structure unit comprises a hidden information unit and an adjacent unit, wherein the absolute value of the difference between the characteristic sizes of the hidden information unit and the adjacent unit is 0-20 nm, and the absolute value of the difference between the characteristic sizes is not 0.
2. The physical-type information hiding structure of claim 1, wherein said structure unit further comprises a disguise unit for forming disguise information, and an absolute value of a difference between feature sizes of the disguise unit and the hidden information unit is greater than 20 nm.
3. The physical information hiding structure according to claim 1, wherein said substrate is a silicon wafer or a glass sheet.
4. The physical-type information hiding structure as claimed in claim 1, wherein said metal reflective layer is made of aluminum or silver.
5. The physical-type information hiding structure of claim 1, wherein said metal reflective layer has a thickness greater than 40 nm.
6. The physical information hiding structure of claim 1, wherein said dielectric layer is a cured electronic glue.
7. The physical-type information hiding structure according to claim 1, wherein said metal particle semi-continuous film is made of aluminum, silver, gold or nickel.
8. A method for preparing a physical information hiding structure as claimed in any one of claims 1 to 7, comprising the steps of:
s1, cleaning a substrate;
s2, preparing a metal reflecting layer: preparing a metal reflecting layer on the substrate by a thermal evaporation device, an electron beam evaporation device or a sputtering instrument;
s3, spin coating of electron beam glue: spin coating electron beam glue on the metal reflecting layer;
s4, manufacturing a layout: manufacturing a layout for electron beam etching with information to be hidden by using drawing software;
s5, electron beam etching and developing: exposing the pattern of the layout in the step S4 on the metal reflecting layer spin-coated with the electron beam glue by using electron beam etching equipment, and then developing by using a developer to obtain a developed substrate;
s6, sputtering a metal particle semi-continuous film: and sputtering a metal particle semi-continuous film on the surface of the developed substrate to obtain the physical information hiding structure.
9. The method according to claim 8, wherein the sputtering current in step S6 is 3-150 mA for 20-350S.
10. The method for extracting the hidden information of the physical information hiding structure according to any one of claims 1 to 8, wherein the hidden information is extracted by irradiating the physical information hiding structure with a narrow-band light source or a monochromatic light source; the bandwidth of the narrow-band light source is less than or equal to 30 nm;
the wavelength of the monochromatic light source is within +/-40 nm near the wave trough wavelength of the reflection spectrum of the structural unit with the hidden information;
the wavelength of the narrow-band light source is within +/-30 nm near the wave bottom wavelength of the reflection spectrum of the structural unit with the hidden information.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114351236A (en) * | 2021-12-28 | 2022-04-15 | 哈尔滨工程大学 | Panchromatic domain structural color encryption module and preparation method thereof |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190298A1 (en) * | 2005-01-14 | 2007-08-16 | Cabot Corporation | Security features, their use and processes for making them |
| KR20110120722A (en) * | 2010-04-29 | 2011-11-04 | 엘지디스플레이 주식회사 | Method of nano patterning and method of fabricating surface plasmon color filter using thereof |
| CN103243368A (en) * | 2013-03-28 | 2013-08-14 | 中国科学院化学研究所 | Full-spectrum color-regulated two-dimensional photonic crystal structure design and porous alumina material-based preparation method |
| KR20140033595A (en) * | 2012-09-07 | 2014-03-19 | 한국과학기술원 | Method of manufacturing surface plasmonic color filter using laser interference lithography |
| CN103777264A (en) * | 2014-01-22 | 2014-05-07 | 浙江大学 | Ultrahigh transmittivity color subtraction filter applicable to any light and preparation method of ultrahigh transmittivity color subtraction filter |
| CN103862031A (en) * | 2014-02-20 | 2014-06-18 | 天津大学 | Composite nano metal materials prepared in combination with ordered porous support or rough surface and method thereof |
| US20150042702A1 (en) * | 2013-08-11 | 2015-02-12 | NanoMedia Solutions Inc. | Nano-media information carrier based on pixelated nano-structures combined with an intensity control layer |
| CN104914494A (en) * | 2015-06-13 | 2015-09-16 | 复旦大学 | A method for obtaining full-color-spectrum structural color through preparing metal holes having a chassis by utilizing nano-imprint lithography |
| CN105723252A (en) * | 2013-09-02 | 2016-06-29 | 丹麦技术大学 | Nanostructures for structural colouring |
| CN106228901A (en) * | 2016-08-23 | 2016-12-14 | 南方科技大学 | Anti-counterfeiting structure, anti-counterfeiting product and manufacturing method thereof |
| CN106480484A (en) * | 2016-10-12 | 2017-03-08 | 中山大学 | A kind of preparation of reflective image device and application process |
| CN106847849A (en) * | 2016-12-30 | 2017-06-13 | 中国科学院西安光学精密机械研究所 | Multispectral chip based on super-surface narrow-band light filtering and preparation method thereof |
| CN110023952A (en) * | 2016-12-13 | 2019-07-16 | 索尼半导体解决方案公司 | Data processing equipment, data processing method, program and electronic device |
| CN110220881A (en) * | 2019-05-08 | 2019-09-10 | 山东大学 | Flexible SERS substrate and its preparation method and application based on nanostructure and ordered nano particle |
| CN110264860A (en) * | 2019-06-14 | 2019-09-20 | 长春理工大学 | A kind of multispectral image camouflage method based on multimembrane system array |
-
2020
- 2020-06-03 CN CN202010496000.0A patent/CN111951662B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190298A1 (en) * | 2005-01-14 | 2007-08-16 | Cabot Corporation | Security features, their use and processes for making them |
| KR20110120722A (en) * | 2010-04-29 | 2011-11-04 | 엘지디스플레이 주식회사 | Method of nano patterning and method of fabricating surface plasmon color filter using thereof |
| KR20140033595A (en) * | 2012-09-07 | 2014-03-19 | 한국과학기술원 | Method of manufacturing surface plasmonic color filter using laser interference lithography |
| CN103243368A (en) * | 2013-03-28 | 2013-08-14 | 中国科学院化学研究所 | Full-spectrum color-regulated two-dimensional photonic crystal structure design and porous alumina material-based preparation method |
| US20150042702A1 (en) * | 2013-08-11 | 2015-02-12 | NanoMedia Solutions Inc. | Nano-media information carrier based on pixelated nano-structures combined with an intensity control layer |
| CN105723252A (en) * | 2013-09-02 | 2016-06-29 | 丹麦技术大学 | Nanostructures for structural colouring |
| CN103777264A (en) * | 2014-01-22 | 2014-05-07 | 浙江大学 | Ultrahigh transmittivity color subtraction filter applicable to any light and preparation method of ultrahigh transmittivity color subtraction filter |
| CN103862031A (en) * | 2014-02-20 | 2014-06-18 | 天津大学 | Composite nano metal materials prepared in combination with ordered porous support or rough surface and method thereof |
| CN104914494A (en) * | 2015-06-13 | 2015-09-16 | 复旦大学 | A method for obtaining full-color-spectrum structural color through preparing metal holes having a chassis by utilizing nano-imprint lithography |
| CN106228901A (en) * | 2016-08-23 | 2016-12-14 | 南方科技大学 | Anti-counterfeiting structure, anti-counterfeiting product and manufacturing method thereof |
| CN106480484A (en) * | 2016-10-12 | 2017-03-08 | 中山大学 | A kind of preparation of reflective image device and application process |
| CN110023952A (en) * | 2016-12-13 | 2019-07-16 | 索尼半导体解决方案公司 | Data processing equipment, data processing method, program and electronic device |
| CN106847849A (en) * | 2016-12-30 | 2017-06-13 | 中国科学院西安光学精密机械研究所 | Multispectral chip based on super-surface narrow-band light filtering and preparation method thereof |
| CN110220881A (en) * | 2019-05-08 | 2019-09-10 | 山东大学 | Flexible SERS substrate and its preparation method and application based on nanostructure and ordered nano particle |
| CN110264860A (en) * | 2019-06-14 | 2019-09-20 | 长春理工大学 | A kind of multispectral image camouflage method based on multimembrane system array |
Non-Patent Citations (3)
| Title |
|---|
| JIANCAI XUE: "Gold nanoarray deposited using alternating current", 《NANOSCALE RESEARCH LETTERS》 * |
| 陈希荣: "纳米防伪技术及其应用研究(二)", 《中国包装》 * |
| 陈礼诚等，: "基于微纳结构与金属纳米层的颜色调控技术研究", 《物理学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351236A (en) * | 2021-12-28 | 2022-04-15 | 哈尔滨工程大学 | Panchromatic domain structural color encryption module and preparation method thereof |
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