CN111950324A - Ultrasonic sensor, manufacturing method thereof and display panel - Google Patents
Ultrasonic sensor, manufacturing method thereof and display panel Download PDFInfo
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- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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Abstract
The application discloses an ultrasonic sensor, a manufacturing method thereof and a display panel, which are used for improving the signal receiving quantity of the ultrasonic sensor and improving the quality of fingerprint identification. The ultrasonic sensor comprises a bearing substrate, a plurality of receiving electrodes arranged on the bearing substrate in an array mode, a piezoelectric film layer positioned on the plurality of receiving electrodes, and a plurality of transmitting electrodes positioned on the piezoelectric film layer and arranged opposite to the plurality of receiving electrodes, wherein one receiving electrode corresponds to one transmitting electrode; the orthographic projection of any one transmitting electrode and the orthographic projection of the opposite receiving electrode on the bearing substrate have an overlapping region, and the overlapping region and the orthographic projection of the receiving electrode around the opposite receiving electrode on the bearing substrate do not overlap.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to an ultrasonic sensor, a manufacturing method thereof and a display panel.
Background
With the rapid development of display technologies, electronic devices with biometric functions are gradually entering people's lives and works. For example, the ultrasonic fingerprint recognition technology is one of the more widely used technologies in the biometric identification technology.
In the existing ultrasonic fingerprint identification technology, a transmitting electrode and a receiving electrode of an ultrasonic sensor simultaneously transmit and receive signals, and the transmitted waves of the transmitting electrode may be transmitted to adjacent receiving electrodes of the corresponding receiving electrode, that is, a phenomenon that signals are interfered between the adjacent receiving electrodes is generated, so that the signal receiving amount of the sensor is low, and the quality of fingerprint identification is influenced.
Disclosure of Invention
The embodiment of the application provides an ultrasonic sensor, a manufacturing method thereof and a display panel, which are used for improving the signal receiving quantity of the ultrasonic sensor and improving the quality of fingerprint identification.
In a first aspect, an embodiment of the present application provides an ultrasonic sensor, which includes a carrier substrate, a plurality of receiving electrodes arranged on the carrier substrate in an array, a piezoelectric film layer located on the plurality of receiving electrodes, and a plurality of transmitting electrodes located on the piezoelectric film layer and arranged opposite to the plurality of receiving electrodes, where one receiving electrode corresponds to one transmitting electrode; wherein,
any one transmitting electrode and the opposite receiving electrode have an overlapping area in the orthographic projection of the bearing substrate, and the overlapping area and the orthographic projection of the receiving electrode around the opposite receiving electrode in the bearing substrate are not overlapped.
In one possible embodiment, an orthographic projection of any one of the transmitting electrodes on the bearing substrate completely covers an orthographic projection of an opposite receiving electrode on the bearing substrate; or,
the orthographic projection of any one receiving electrode on the bearing substrate completely covers the orthographic projection of the opposite transmitting electrode on the bearing substrate; or,
the orthographic projection of any one receiving electrode on the bearing substrate and the orthographic projection of the opposite transmitting electrode on the bearing substrate are mutually overlapped.
In one possible embodiment, each emitter electrode has a square shape in an orthogonal projection on the carrier substrate.
In one possible embodiment, the connecting member between two adjacent emitter electrodes has a square shape in an orthogonal projection on the carrier substrate.
In one possible embodiment, the ultrasonic sensor further includes:
and the protective layer is positioned on one side of the plurality of transmitting electrodes far away from the plurality of receiving electrodes.
In one possible embodiment, the thickness of each of the transmitting electrodes in the thickness direction of the ultrasonic sensor is in the range of [3 μm, 30 μm ].
In one possible embodiment, the ultrasonic sensor further includes:
a backing electrode layer between the protective layer and the plurality of emitter electrodes;
an insulating layer between the plurality of emitter electrodes and the backing electrode layer;
wherein a thickness of a total thickness of each of the transmitting electrodes and the backing electrode layer in a thickness direction of the ultrasonic sensor is in a range of [10 μm, 20 μm ].
In one possible embodiment, the thickness of the insulating layer is less than 1 μm.
In a possible implementation manner, a first dielectric material is filled between two adjacent emission electrodes, so that the surface of the piezoelectric film layer adjacent to the plurality of emission electrodes is flat.
In one possible embodiment, a second dielectric material is disposed between two adjacent receiving electrodes, so that the surface of the piezoelectric film layer adjacent to the plurality of receiving electrodes is flat.
In a second aspect, an embodiment of the present application provides a display panel, which includes a display backplane, and the ultrasonic sensor according to any one of the first aspect, located on one side of the display backplane; the substrate base plate of the display back plate is a bearing base plate of the ultrasonic sensor.
In a third aspect, an embodiment of the present application provides a method for manufacturing an ultrasonic sensor, where the method includes:
sequentially manufacturing a plurality of receiving electrodes and piezoelectric film layers which are arranged in an array manner and a plurality of transmitting electrodes which are arranged in an array manner on a bearing substrate; wherein,
one receiving electrode corresponds to one transmitting electrode, any transmitting electrode and the opposite receiving electrode have an overlapping area in the orthographic projection of the bearing substrate, and the overlapping area and the orthographic projection of the receiving electrodes around the opposite receiving electrode on the bearing substrate are not overlapped.
In one possible embodiment, fabricating a plurality of emitter electrodes arranged in an array on the piezoelectric film layer includes:
manufacturing a first dielectric material layer on the piezoelectric film layer;
patterning the first dielectric material layer to form a plurality of complementary patterns of the emission electrode layer;
and manufacturing an emitting electrode material on the patterned first dielectric material layer to form the plurality of emitting electrodes.
In one possible embodiment, fabricating a plurality of emitter electrodes arranged in an array on the piezoelectric film layer includes:
manufacturing an emitting electrode material on the piezoelectric film layer;
and carrying out patterning treatment on the emission electrode material to form the plurality of emission electrodes.
In a possible implementation, after the plurality of emitter electrodes arranged in an array are fabricated on the piezoelectric film layer, the method further includes:
filling a second dielectric material between two adjacent transmitting electrodes so as to make the surface of the piezoelectric film layer adjacent to the plurality of transmitting electrodes flat;
and manufacturing a protective layer on the plurality of emission electrodes.
In a possible implementation, after the filling of the second dielectric material between two adjacent transmitting electrodes, the method further includes:
manufacturing an insulating layer on the plurality of transmitting electrodes;
and manufacturing a backing electrode layer on the insulating layer.
In the embodiment of the application, the ultrasonic sensor comprises a plurality of receiving electrodes and a plurality of transmitting electrodes which are arranged in an array, wherein any one transmitting electrode and the opposite receiving electrode have an overlapping area in the orthographic projection of the bearing substrate, and the overlapping area is not overlapped with the orthographic projection of the receiving electrode around the opposite receiving electrode on the bearing substrate, so that even if the transmitting electrode and the receiving electrode simultaneously receive and transmit signals, the transmitting wave of the receiving electrode cannot be transmitted to the adjacent receiving electrode of the corresponding receiving electrode, thereby avoiding the problem that crosstalk possibly occurs between the adjacent receiving electrodes of the signals, and improving the signal receiving capacity of the ultrasonic sensor.
Drawings
Fig. 1 is a schematic diagram illustrating a signal crosstalk phenomenon between adjacent receiving electrodes of a current ultrasonic sensor according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
FIG. 5 is a graph of an electric field profile of a piezoelectric film layer of a prior art ultrasonic sensor;
fig. 6 is an electric field distribution diagram of a piezoelectric film layer of an ultrasonic sensor provided in an embodiment of the present application;
FIG. 7 is a stress distribution diagram of a piezoelectric film layer and a carrier substrate of a prior art ultrasonic transducer;
FIG. 8 is a stress distribution diagram of a piezoelectric film layer and a supporting substrate thereof of an ultrasonic sensor provided in an embodiment of the present application;
FIG. 9 is a top view of a plurality of emitter electrodes provided in embodiments of the present application;
FIG. 10 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
fig. 11 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
FIG. 12 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
fig. 13 is a schematic structural diagram of an ultrasonic sensor provided in an embodiment of the present application;
fig. 14 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
fig. 15 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
fig. 16 is a flowchart of a method for manufacturing an ultrasonic sensor according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application.
In the current ultrasonic fingerprint identification technology, the transmitting electrode of the ultrasonic sensor is usually arranged on the whole surface, and the receiving electrode of the sensor is designed in a patterning mode. In general, in order to simultaneously transmit and receive signals, a transmitting electrode and a receiving electrode simultaneously transmit and receive signals, and since the transmitted waves are planar, part of the transmitted waves may be reflected to an adjacent receiving electrode of the corresponding receiving electrode, as shown in fig. 1. Fig. 1 exemplifies that the ultrasonic sensor has 4 receiving electrodes, and the 4 receiving electrodes are a receiving electrode 1, a receiving electrode 2, a receiving electrode 3, and a receiving electrode 4, respectively. Fig. 1 illustrates an example of a pixel transducer (illustrated by a dotted line in fig. 1) in which a receiving electrode 2 and an area where the receiving electrode coincides with an orthographic projection of the receiving electrode on a carrier substrate are defined, and transmits 1 beam of transmission waves (illustrated by arrows in fig. 1, the arrows indicate a plurality of sound waves emitted in a plurality of directions) to a transmitting electrode, where the transmission waves are beams with a beam angle different from 0 degree, and the sound waves respectively forming angles α and β with a vertical direction are reflected to the receiving electrode 1 and the receiving electrode 3, so that signals are subjected to crosstalk between adjacent receiving electrodes, and thus the signal receiving amount of a sensor is low, the utilization rate of ultrasonic signals is low, and the quality of fingerprint identification is affected.
In view of this, the embodiments of the present application provide a new ultrasonic sensor, in which the transmitting electrodes are also patterned, and one receiving electrode corresponds to one transmitting electrode, so as to avoid crosstalk that may occur between adjacent receiving electrodes, and improve the signal receiving amount of the ultrasonic sensor.
The following describes in detail specific embodiments of an ultrasonic sensor, a method for manufacturing the same, and a display panel according to embodiments of the present invention, with reference to the accompanying drawings. The thicknesses and shapes of the various film layers in the drawings are not to be considered true proportions, but are merely intended to illustrate the present invention.
Referring to fig. 2, an ultrasonic sensor according to an embodiment of the present invention includes a carrier substrate 10, a plurality of receiving electrodes 20 arranged on the carrier substrate 10 in an array, a piezoelectric film 30 located on the receiving electrodes 20, and a plurality of transmitting electrodes 40 located on the piezoelectric film 30 and opposite to the receiving electrodes 20, wherein one receiving electrode 20 corresponds to one transmitting electrode 40; any one of the transmitting electrodes 40 has an overlapping region with the orthogonal projection of the opposite receiving electrode 20 on the carrier substrate 10, and does not overlap with the orthogonal projection of the receiving electrode 20 around the opposite receiving electrode 20 on the carrier substrate 10.
In some embodiments, the orthographic projection of any one of the transmitting electrodes 40 and the opposite receiving electrode 20 on the carrier substrate 10 may have the following conditions:
in the first case: the orthographic projection of any one receiving electrode 20 on the carrier substrate 10 and the orthographic projection of the opposite emitting electrode 40 on the carrier substrate 10 are overlapped with each other as shown in fig. 2.
In the second case: the orthographic projection of any one of the transmitting electrodes 40 on the carrier substrate 10 completely covers the orthographic projection of the opposite receiving electrode 20 on the carrier substrate 10, as shown in fig. 3.
In the third case: the orthographic projection of any one receiving electrode 20 on the carrier substrate 10 completely covers the orthographic projection of the opposite emitting electrode 40 on the carrier substrate 10, as shown in fig. 4.
In any of the three cases, an overlapping region may be formed between the orthogonal projection of any transmitting electrode 40 and the opposite receiving electrode 20 on the carrier substrate 10, and the orthogonal projection of the receiving electrode 20 around the opposite receiving electrode 20 on the carrier substrate 10 does not overlap with each other, so that even if the transmitting electrode 40 and the receiving electrode 20 transmit and receive signals simultaneously, the transmitted wave of the receiving electrode 20 is not transmitted to the adjacent receiving electrode 20 of the corresponding receiving electrode 20, thereby avoiding the problem that crosstalk may occur between the adjacent receiving electrodes 20, and increasing the signal receiving amount of the ultrasonic sensor.
For ease of understanding, fig. 5 is a diagram illustrating an electric field distribution of the piezoelectric film 30 of the ultrasonic sensor in the prior art, and fig. 6 is a diagram illustrating an electric field distribution of the piezoelectric film 30 of the ultrasonic sensor according to the embodiment of the present application. In fig. 5 and 6, the electric field distribution diagrams are shown for the alternating voltage of 1V applied between the transmitting electrode 40 and the receiving electrode 20, and the colors at different depths in fig. 5 and 6 show different electric field strengths, respectively.
As can be seen from comparing fig. 5 and fig. 6, in fig. 6, the alternating electric field generated by the patterned transmitting electrode 40 is more concentrated on the effective area of each receiving electrode 20 than the alternating electric field generated by the entire transmitting electrode 40, so that the electric field coupling between the adjacent receiving electrodes 20 is reduced, i.e. the signal crosstalk is suppressed, and at the same time, the electromechanical conversion efficiency is improved.
In addition, please refer to fig. 7, which is a stress distribution diagram of a piezoelectric film layer and a carrier substrate thereof of an ultrasonic sensor in the prior art, and refer to fig. 8, which is a stress distribution diagram of a piezoelectric film layer 30 and a carrier substrate 10 thereof of an ultrasonic sensor provided in an embodiment of the present application. As can be seen in fig. 7, the stress transmitted between adjacent pixel transducers is not well defined, and thus, greater cross-talk between adjacent pixel transducers occurs. While the stress transmitted between adjacent pixel transducers remains sharply defined, as shown in fig. 8, which greatly reduces crosstalk from adjacent pixel transducers.
Furthermore, it can be known from the signal-to-noise ratio formula (SNR ═ 10log S/N) that the smaller the noise signal power, the larger the signal-to-noise ratio, where SNR represents the signal-to-noise ratio, S represents the power of the useful signal, and N represents the power of the noise signal. In the current ultrasonic sensor, a part of the noise signal power of the receiving electrode 20 is from crosstalk signal power, and a part of the noise signal power is from other noise signal power, but the embodiment of the present application avoids crosstalk of signals between adjacent receiving electrodes 20, so that the noise signal power of the receiving electrode 20 is reduced, thereby reducing the total noise signal power and improving the signal-to-noise ratio.
Since the transmitting electrode 40 divides the total transmitting voltage, the voltage actually applied to the piezoelectric film layer 30 is smaller than the total transmitting voltage, which affects the transmitting efficiency. The lower the resistance of the emitter electrode 40, the higher the voltage actually applied to the piezoelectric film layer 30, and thus the higher the emission efficiency of the emitter electrode 40 to the signal. Since the resistance of the emitter electrode 40 is minimized when the emitter electrode 40 is full-faced, the emitter electrode 40 is generally full-faced in order to secure high emission efficiency. However, the entire surface of the emitting electrode 40 may cause signal crosstalk, and therefore, the embodiment of the present application uses the patterned emitting electrode 40, that is, uses the emitting electrodes 40 corresponding to the receiving electrodes 20 made of, for example, Indium Tin Oxide (ITO), which may cause the resistance of the emitting electrode 40 to become large, which is not favorable for meeting the requirement of the emitting efficiency.
For this purpose, fig. 9 is a top view of the plurality of emitter electrodes 40. The orthographic projection of each emitter electrode 40 on the carrier substrate 10 in the embodiment of the present application is square, that is, the shape of each emitter electrode 40 is square. The connecting member 41 between the two further adjacent emitter electrodes 40 is also square in the orthogonal projection of the carrier substrate 10.
The resistance of any one of the emitter electrodes 40 can be obtained by equation (1):
in the formula (1), R is the resistance of the emitter electrode 40, L is the length of the emitter electrode 40, W is the width of the emitter electrode 40, h is the thickness of the emitter electrode 40,
is the sheet resistance of the emitter electrode 40 with a thickness h.
As can be seen from formula (1), when L is the same as W, the resistance of the emitter electrode 40 is equal to the square resistance thereof, so in the embodiment of the present application, each emitter electrode 40 is square, and the connecting member 41 between two adjacent emitter electrodes 40 is also square, so that the resistance of the emitter electrode 40 can be made as small as possible to satisfy higher emission efficiency. In addition, each transmitting electrode 40 and the connecting member 41 are square, that is, the shape formed by the plurality of transmitting electrodes 40 is square, so that the horizontal resolution and the longitudinal resolution of the ultrasonic sensor can be ensured to be the same, the ultrasonic imaging effect is not influenced by the placement direction of the finger to be detected, and the detection precision of the ultrasonic sensor is improved as much as possible. In some embodiments, the side length of the emitter electrodes 40 may be 60 μm to 70 μm, and the spacing between adjacent emitter electrodes 40 is smaller than the size of the object to be resolved, i.e., the side length of the connecting member 41 of adjacent emitter electrodes 40 may be, for example, 10 μm to 20 μm.
Referring to fig. 10, in the ultrasonic sensor provided in the embodiment of the present application, a protection layer 50 is further disposed on a side of the plurality of transmitting electrodes 40 away from the plurality of receiving electrodes 20, so as to seal and protect the plurality of transmitting electrodes 40, and reduce vibration of the plurality of transmitting electrodes 40 caused by an external force. In a possible implementation, the material of the protective layer 50 may be epoxy. Wherein, the epoxy resin can be doped with materials for adjusting the sound attenuation coefficient and the sound impedance, such as tungsten, tungsten oxide, iron oxide, titanium dioxide, silicon dioxide, talcum powder and the like.
In some embodiments, referring to fig. 11, a first dielectric material is further filled between two adjacent emitting electrodes 40 to form a first dielectric material layer 60, so that the surface of the piezoelectric film layer 30 adjacent to the plurality of emitting electrodes 40 is flat.
In some embodiments, referring to fig. 12, a second dielectric material may be filled between two adjacent receiving electrodes 20 to form a second dielectric material layer 70, so that the surface of the piezoelectric film layer 30 adjacent to the plurality of receiving electrodes 20 is flat. The second dielectric material layer 70 may be an epoxy layer or silicon nitride SiNx.
Generally, if the ultrasonic sensor is disposed on a display panel, one side of the receiving electrode 20 will carry other devices of the display panel, and the transmitting electrode 40 is generally thicker in order to balance the weight of the two sides of the piezoelectric film layer 30. However, due to the process limitation of patterning, the thicker emitter electrode 40 is not easily patterned, which is also the reason for using the whole emitter electrode 40 in the prior art.
The embodiment of the present application can increase the thickness of the protective layer 50 to reduce the thickness of the emitter electrode 40, and can balance the weight of the piezoelectric film 30 on both sides.
In some embodiments, the thickness of each transmitting electrode 40 in the thickness direction of the ultrasonic sensor is in the range of [3 μm, 30 μm ], or the thickness of each transmitting electrode 40 in the thickness direction of the ultrasonic sensor is in the range of [3 μm, 20 μm ], so that the thickness of the transmitting electrode 40 is thin for easy patterning.
When the thickness of the emitter electrode 40 is small, for example, the thickness of the emitter electrode 40 is 3 μm to 8 μm, the patterning process can be directly performed on the entire emitter electrode 40 to obtain the patterned emitter electrode 40, and the process is simple.
In some embodiments, referring to fig. 13, the ultrasonic sensor provided in the embodiments of the present invention further includes a backing electrode layer 80 disposed between the protective layer 50 and the plurality of transmitting electrodes 40, and an insulating layer 90 disposed between the plurality of transmitting electrodes 40 and the backing electrode layer. The provision of the backing electrode layer 80 and the insulating layer 90 may reduce the thickness of the emitter electrode 40 and/or the protective layer 50. For example, the thickness of the total thickness of each of the transmitting electrode 40 and the backing electrode layer 80 in the thickness direction of the ultrasonic sensor may be in the range of [10 μm, 20 μm ]. For another example, the thickness of each of the transmitting electrode 40 and the backing electrode layer 80 in the thickness direction of the ultrasonic sensor may be thicker or thinner due to differences in the metal from which the transmitting electrode 40 is made or the metal from which the backing electrode layer 80 is made, or the like, or due to the precision requirements of the manufacturing process. The backing electrode layer is understood to be a film layer added for making the emission electrode 40 thinner, and in order to utilize the film layer as much as possible, the film layer may be the backing electrode layer 80, which may serve as a power supply electrode for other devices, and the like.
In some embodiments, in a possible implementation, the insulating layer 90 may be a silicon nitride SiN layer, and the thickness of the insulating layer may be less than 1 μm, so as to not affect the vibration of the acoustic wave as much as possible and reduce the influence on the operation of the ultrasonic sensor.
The operation of the ultrasonic sensor is described below.
When the voltage is input to the transmitting electrode 40 and the receiving electrode 20, the piezoelectric film 30 deforms, i.e., the piezoelectric film 30 drives the upper and lower films to vibrate together, and then the sound wave is generated and transmitted. Taking the example that the transmitting electrode 40 transmits the sound wave, when a finger is placed on the side of the receiving electrode 20 of the ultrasonic sensor, the transmitting electrode 40 transmits the sound wave to the valley or ridge of the finger of the user, and the valley and the ridge of the finger are reflected by different signals because the energy reflected by the valley and the ridge of the finger is different.
Referring to fig. 14, based on the same inventive concept, an embodiment of the present invention further provides a display panel, which includes a display back plate and the above-mentioned ultrasonic sensor disposed on the display back plate; the carrier substrate 10 may be a substrate of a display backplane, which is exemplified in fig. 14. The base substrate may be, for example, a Thin Film Transistor (TFT) substrate. The carrier substrate 10 may not share a base substrate with the display backplane, in which case the carrier substrate 10 is bonded to the base substrate of the display backplane. Of course, the display panel also includes other necessary devices, such as the display light emitting device 100 and the glass cover 200, which are not described herein again.
In some embodiments, a matching layer may be disposed between the carrier substrate 10 and the display light emitting device 100, which may be a material having acoustic impedance that is a geometric mean of the acoustic impedances of the carrier substrate 10 and the display light emitting device 100. For example, the epoxy resin may be doped with a filler for adjusting acoustic impedance, such as tungsten, tungsten oxide, iron oxide, titanium dioxide, silica, or talc. In a possible embodiment, the thickness of the matching layer may be a quarter of the wavelength of the ultrasound waves to match as closely as possible the acoustic impedance of the carrier substrate 10 and the display light emitting device 100.
Referring to fig. 15, in some embodiments, a TFT pixel circuit is further disposed between the carrier substrate 10 and the receiving electrode 20. The TFT pixel circuit includes an active layer (active) patterned on a carrier substrate 10, a gate insulating layer (GI) on the active layer, a gate electrode (gate) on the gate insulating layer, and a source electrode (S) and a drain electrode (D) disposed on two sides of the gate insulating layer. Specifically, before the plurality of receiving electrodes 20 are fabricated on the carrier substrate 10, the TFT pixel circuits may be fabricated on the carrier substrate 10, then dielectric layers such as silicon nitride SiN and resin are deposited on the entire surfaces of the TFT pixel circuits, then the dielectric layers are opened on each pixel circuit, then the receiving electrodes 20 are deposited, and the source S is connected to the receiving electrodes 20 through the openings, thereby achieving the connection between the receiving electrodes 20 and the TFT pixel circuits.
Based on the same inventive concept, an embodiment of the present invention further provides a manufacturing method of the ultrasonic sensor, as shown in fig. 16, the manufacturing method includes the following steps:
s161, a plurality of receiving electrodes 20 arranged in an array are fabricated on the carrier substrate 10.
S162, the piezoelectric film layer 30 is formed on the plurality of receiving electrodes 20.
S163, a plurality of emitter electrodes 40 arranged in an array are fabricated on the piezoelectric film layer 30.
In step S161, the carrier substrate 10 may be glass, Polyimide (PI), or the like. In the embodiment of the present application, a metal layer may be formed on the carrier substrate 10 by an inkjet printing method, and then the metal layer is patterned to obtain a plurality of receiving electrodes 20 arranged in an array. Alternatively, a plurality of receiving electrodes 20 arranged in an array may be formed on the carrier substrate 10 by screen printing.
In step S162, a layer of piezoelectric material is deposited on the plurality of receiving electrodes 20, forming the piezoelectric film layer 30. The piezoelectric material may be formed of a polymer film that is easy to process, and may be polyvinylidene fluoride (PVDF), polyvinylidene fluoride trifluoroethylene (PVDF-TrFE), or the like, for example. In particular, the thickness of the piezoelectric film layer 30 may be in a range of 5 μm to 15 μm.
Since the plurality of receiving electrodes 20 between the piezoelectric film 30 and the carrier substrate 10 are arranged in an array, that is, air is left between the piezoelectric film 30 and the carrier substrate 10, the embodiment of the present application aims to achieve better ultrasonic wave propagation efficiency. Before the piezoelectric film layer 30 is formed on the plurality of receiving electrodes 20, a second dielectric material 70 may be filled between the adjacent receiving electrodes 20, so that the surface of the piezoelectric film layer 30 adjacent to the plurality of receiving electrodes 20 may be flat.
In step S163, the manufacturing of the plurality of emitter electrodes 40 arranged in an array on the piezoelectric film layer 30 may include the following two manufacturing methods.
The first manufacturing method comprises the following steps:
firstly, a dielectric material layer 60 is manufactured on the piezoelectric film layer 30, then patterning is carried out on the dielectric material layer 60 to form a plurality of patterns complementary to the emission electrode 40 layer, and then the emission electrode 40 material is manufactured on the patterned dielectric material layer 60 to form a plurality of emission electrodes 40.
For example, an epoxy layer, for example, having a thickness in the range of 2 μm to 10 μm, is deposited on the piezoelectric film layer 30, and the epoxy layer is patterned through a photolithography etching process to form a complementary pattern of the plurality of emitter electrode 40 layers. A metal layer is then deposited using an electroplating process or an inkjet printing technique to form a plurality of emitter electrodes 40. The metal layer includes, but is not limited to, metals with high acoustic impedance, such as Cu, Mo, Ag, and the like.
According to the fact that the reflectivity of the sound wave is equal to the sum of the acoustic impedances of the difference of the acoustic impedances of the two layers of media and the sum of the acoustic impedances, the reflectivity of the sound wave between the two interfaces with the larger acoustic impedance difference is known to be higher, and the sound wave emitted by the piezoelectric film layer 30 is reflected to the direction of a detected object. In some embodiments, the thickness of the plurality of emitter electrodes 40 is consistent with the thickness of the patterned dielectric material layer 60 to ensure that the emissivity of the piezoelectric film layer 30 is high while the surface of the piezoelectric film layer 30 adjacent to the plurality of emitter electrodes 40 is flat.
The second manufacturing method comprises the following steps:
an emitter electrode material is first formed on the piezoelectric film layer 30, and then the emitter electrode 40 material is patterned to form a plurality of emitter electrodes 40. This eliminates the need for a step of making a patterned epoxy.
In this way, considering the patterning process of the emitter electrode material, the emitter electrode material is usually a metal, and if the emitter electrode material is thicker, the patterning process is more demanding, so in some embodiments, the thickness of the emitter electrode material is thinner, for example, the thickness of the emitter electrode material may be less than 4 μm, and the patterning process is less demanding, which is easy to implement.
In both the first and second embodiments, the patterned emitter electrodes 40 are exposed and easily oxidized, so that the protective layer 50 may be formed on the emitter electrodes 40 after the emitter electrodes 40 are formed to protect the emitter electrodes 40.
Specifically, if the first manufacturing method is adopted to manufacture the plurality of emitter electrodes 40, an epoxy layer may be deposited on the plurality of emitter electrodes 40 as the protective layer 50. If the second manufacturing method is adopted to manufacture a plurality of emitter electrodes 40, the dielectric material 60 may be filled between adjacent emitter electrodes 40, and then the protective layer 50 may be manufactured. The thickness of the plurality of emitter electrodes 40 is consistent with the thickness of the filled dielectric material 60, so as to ensure that the emissivity of the piezoelectric film 30 is high, the surface of the piezoelectric film 30 adjacent to the plurality of emitter electrodes 40 is flat, and the vibration of the emitter electrodes 40 caused by external force can be reduced. Or, a thermal compression curing method may be adopted to coat a layer of epoxy resin, and a part of the epoxy resin layer is filled between adjacent emitting electrodes 40, so that the purpose of filling a dielectric material between adjacent emitting electrodes 40 is achieved, the purpose of manufacturing the protective layer 50 is also achieved, and the process is simplified.
In some embodiments, when the emitter electrodes 40 are manufactured by the second manufacturing method, in order to make the emitter electrodes 40 thinner, after the dielectric material 60 is filled between two adjacent emitter electrodes 40, the insulating layer 90 may be further manufactured on a plurality of emitter electrodes 40, then the backing electrode layer 80 is manufactured on the insulating layer 90, and then the protective layer 50 is manufactured on the backing electrode layer 80.
In summary, the ultrasonic sensor of the embodiment of the present application includes a plurality of receiving electrodes and a plurality of transmitting electrodes arranged in an array, wherein any transmitting electrode and the opposite receiving electrode have an overlapping region in the orthographic projection of the carrier substrate, and the overlapping region does not overlap with the orthographic projection of the receiving electrode around the opposite receiving electrode in the carrier substrate, so that even if the transmitting electrode and the receiving electrode simultaneously transmit and receive signals, the transmitting wave of the receiving electrode is not transmitted to the adjacent receiving electrode of the corresponding receiving electrode, thereby avoiding the problem that crosstalk may occur between the adjacent receiving electrodes, and improving the signal receiving amount of the ultrasonic sensor.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (16)
1. An ultrasonic sensor is characterized by comprising a bearing substrate, a plurality of receiving electrodes arranged on the bearing substrate in an array mode, a piezoelectric film layer positioned on the plurality of receiving electrodes, and a plurality of transmitting electrodes positioned on the piezoelectric film layer and opposite to the plurality of receiving electrodes, wherein one receiving electrode corresponds to one transmitting electrode; wherein,
any one transmitting electrode and the opposite receiving electrode have an overlapping area in the orthographic projection of the bearing substrate, and the overlapping area and the orthographic projection of the receiving electrode around the opposite receiving electrode in the bearing substrate are not overlapped.
2. The ultrasonic sensor of claim 1, wherein an orthographic projection of any one of the transmitting electrodes on the carrier substrate completely covers an orthographic projection of an opposite receiving electrode on the carrier substrate; or,
the orthographic projection of any one receiving electrode on the bearing substrate completely covers the orthographic projection of the opposite transmitting electrode on the bearing substrate; or,
the orthographic projection of any one receiving electrode on the bearing substrate and the orthographic projection of the opposite transmitting electrode on the bearing substrate are mutually overlapped.
3. The ultrasonic sensor of claim 1, wherein each transmitting electrode has a square shape in an orthogonal projection on the carrier substrate.
4. The ultrasonic sensor according to claim 1, wherein the connecting member between adjacent two of the transmitting electrodes has a square shape in an orthogonal projection on the carrier substrate.
5. The ultrasonic sensor of any one of claims 1-4, further comprising:
and the protective layer is positioned on one side of the plurality of transmitting electrodes far away from the plurality of receiving electrodes.
6. The ultrasonic sensor according to claim 5, wherein a thickness of each of the transmitting electrodes in a thickness direction of the ultrasonic sensor is in a range of [3 μm, 30 μm ].
7. The ultrasonic sensor of claim 5, further comprising:
a backing electrode layer between the protective layer and the plurality of emitter electrodes;
an insulating layer between the plurality of emitter electrodes and the backing electrode layer;
wherein a thickness of a total thickness of each of the transmitting electrodes and the backing electrode layer in a thickness direction of the ultrasonic sensor is in a range of [10 μm, 20 μm ].
8. The ultrasonic sensor of claim 7, wherein the insulating layer has a thickness of less than 1 μm.
9. The ultrasonic sensor according to claim 7, wherein a first dielectric material is filled between two adjacent transmitting electrodes, so that the surface of the piezoelectric film layer adjacent to the plurality of transmitting electrodes is flat.
10. The ultrasonic sensor according to any one of claims 1 to 4, wherein a second dielectric material is provided between adjacent two of the receiving electrodes so that a surface of the piezoelectric film layer adjacent to the plurality of receiving electrodes is flat.
11. A display panel comprising a display backplane, and the ultrasonic sensor of any one of claims 1-10 on one side of the display backplane; the substrate base plate of the display back plate is a bearing base plate of the ultrasonic sensor.
12. A method of fabricating an ultrasonic sensor, comprising:
sequentially manufacturing a plurality of receiving electrodes and piezoelectric film layers which are arranged in an array manner and a plurality of transmitting electrodes which are arranged in an array manner on a bearing substrate; wherein,
one receiving electrode corresponds to one transmitting electrode, any transmitting electrode and the opposite receiving electrode have an overlapping area in the orthographic projection of the bearing substrate, and the overlapping area and the orthographic projection of the receiving electrodes around the opposite receiving electrode on the bearing substrate are not overlapped.
13. The method of manufacturing according to claim 12, wherein manufacturing a plurality of emitter electrodes arranged in an array on the piezoelectric film layer includes:
manufacturing a first dielectric material layer on the piezoelectric film layer;
patterning the first dielectric material layer to form a plurality of complementary patterns of the emission electrode layer;
and manufacturing an emitting electrode material on the patterned first dielectric material layer to form the plurality of emitting electrodes.
14. The method of manufacturing according to claim 12, wherein manufacturing a plurality of emitter electrodes arranged in an array on the piezoelectric film layer includes:
manufacturing an emitting electrode material on the piezoelectric film layer;
and carrying out patterning treatment on the emission electrode material to form the plurality of emission electrodes.
15. The method of manufacturing according to claim 14, further comprising, after manufacturing a plurality of emitter electrodes arranged in an array on the piezoelectric film layer:
filling a second dielectric material between two adjacent transmitting electrodes so as to make the surface of the piezoelectric film layer adjacent to the plurality of transmitting electrodes flat;
and manufacturing a protective layer on the plurality of emission electrodes.
16. The method of claim 15, wherein after the filling the second dielectric material between two adjacent emitter electrodes, further comprising:
manufacturing an insulating layer on the plurality of transmitting electrodes;
and manufacturing a backing electrode layer on the insulating layer.
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