CN111948701A - Single event effect detector - Google Patents
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- CN111948701A CN111948701A CN202010651473.3A CN202010651473A CN111948701A CN 111948701 A CN111948701 A CN 111948701A CN 202010651473 A CN202010651473 A CN 202010651473A CN 111948701 A CN111948701 A CN 111948701A
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- G01T5/02—Processing of tracks; Analysis of tracks
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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Abstract
The invention discloses a single event effect detector, which comprises a case, an integrated probe and four circuit boards, wherein the integrated probe and the four circuit boards are arranged in the case; the integrated probe includes: the large-scale integrated chip comprises two LET spectrum sensors and a large-scale integrated chip to be tested, wherein the large-scale integrated chip is positioned between the two LET spectrum sensors; the chip is used for capturing a single event upset event; the four circuit boards include: the circuit board comprises a mother board for connecting signals among circuit boards and fixing an integrated probe, an analog board for processing signals of the LET spectrum sensor, a computer board for acquiring and storing data and a power supply board for supplying power to the LET spectrum sensor and the circuit boards. The detector can directly reflect the relation between the single event upset event and the LET spectrum of the device, on one hand, provides evidence for the accuracy of LET spectrum detection, and on the other hand, can improve the accuracy of a satellite single event upset rate prediction method.
Description
Technical Field
The invention relates to the field of aerospace, in particular to a single event effect detector.
Background
The space charged particle sources mainly comprise earth radiation band particles, Galaxy cosmic rays and solar cosmic rays, the range of LET spectrum of various high-energy particle radiation is wide, and the range of 0.001-100 MeV/(mg/cm2) is covered.
The acquired data cannot directly correspond to a single event effect by a space high-energy particle radiation LET spectrum detector (detection range: 1-100 MeV/(mg/cm2)) carried on a spacecraft at present, and in an in-orbit single event upset test, only the in-orbit upset probability of a device can be obtained, the LET value causing the device upset cannot be determined, and the LET value cannot be directly applied to the safety design and guarantee of a satellite.
Disclosure of Invention
The invention aims to overcome the technical defects, and in order to intuitively obtain the relationship between the LET value of the device and the single event upset, the invention ensures that the sensitive surface of the sensor can cover the effective size of a chip by selecting the appropriate size of the sensitive surface of the sensor, the integrated chip and the reasonable layout, and each single event upset event can be traced back to the corresponding LET value (the measurable LET value is required to be as low as possible, and all energy sections which can cause the single event upset are covered); meanwhile, the designed single event effect detector is used for solving the problem of electromagnetic interference of a large-scale integrated circuit on a sensor weak signal measuring system and avoiding false triggering and false counting.
In order to achieve the aim, the invention provides a single event effect detector which comprises a case, an integrated probe and four circuit boards, wherein the integrated probe and the four circuit boards are arranged in the case;
the integrated probe includes: the large-scale integrated chip comprises two LET spectrum sensors and a large-scale integrated chip to be tested, wherein the large-scale integrated chip is positioned between the two LET spectrum sensors; the chip is used for capturing a single event upset event;
the four circuit boards include: the circuit board comprises a mother board for connecting signals among circuit boards and fixing an integrated probe, an analog board for processing signals of the LET spectrum sensor, a computer board for acquiring and storing data and a power supply board for supplying power to the LET spectrum sensor and the circuit boards.
The integrated probe is divided into three layers, the upper layer is an LET spectrum sensor fixed in an upper shielding box and a corresponding preamplification forming circuit thereof, the middle layer is a large-scale integrated chip to be detected, the lower layer is an LET spectrum sensor fixed in a lower shielding box and a corresponding preamplification circuit thereof, and the sizes of the upper shielding box and the lower shielding box are the same; the two shielding boxes are arranged on the front surface and the back surface of the mother board, so that the edges of the two shielding boxes correspond to each other; the large-scale integrated chip to be tested is directly welded on the motherboard and is arranged between the sensitive surfaces of the two sensors; the pre-amplification shaping circuit is used for performing voltage conversion and shaping amplification on the charge pulse signal output by the LET spectrum sensor.
As an improvement of the above device, the signal line and the power line of the lsi to be tested are disposed in an inner layer of the motherboard; the outputs of the two preamplification circuits are respectively led out to the analog board through the inner layer of the motherboard after being connected to the bonding pad of the motherboard.
As an improvement of the device, the analog board is provided with two circuits formed by connecting an amplifying circuit, a peak-hold circuit and a trigger circuit in series, and one circuit receives a signal output by a pre-amplifying and forming circuit in an upper shielding box; the other path receives the signal output by the preamplification forming circuit in the lower shielding box;
the amplifying circuit is used for further amplifying the signal output by the pre-amplifying and shaping circuit;
the peak-hold circuit is used for holding the peak value of the output signal of the amplifying circuit;
and the trigger circuit is used for outputting a trigger signal according to the condition that the signal amplitude exceeds the set threshold value, and informing the computing board to carry out A/D conversion on the signal output by the peak-hold circuit.
As an improvement of the device, the computer board is provided with two paths of A/D conversion circuits, an FPGA control circuit, a crystal oscillator circuit, a data storage SRAM and a 1553 interface; the two A/D conversion circuits are respectively connected with one peak protection circuit; the 1553 interface is an interface between the detector and the satellite platform;
the two A/D conversion circuits are respectively used for carrying out analog-to-digital conversion on the peak value of the signal output by the peak protection circuit connected with the two A/D conversion circuits under the control of the FPGA control circuit,
the crystal oscillator circuit is used for providing a 16MHz clock for the FPGA control circuit;
and the FPGA control circuit is used for controlling the A/D conversion circuits to work after receiving the trigger signal, storing the signal amplitude numerical values output by the two A/D conversion circuits into the data storage SRAM, reading the data of the large-scale integrated chip to be tested and storing the data into the data storage SRAM, and reading the data of the data storage SRAM and sending the data to the satellite platform through a 1553 interface.
As an improvement of the device, the satellite platform packs and downloads the incident moment of the incident particles, the signal amplitudes output by the two paths of A/D conversion circuits and the addresses of the large-scale integrated chips to be detected with numerical values turned to an upper computer on the ground;
the upper computer calculates the loss energy delta E according to the signal amplitude numerical values output by the two A/D conversion circuits, calculates the length D of a path through which the particles pass in the sensor according to the thickness of the sensor, namely the thickness of the sensor when the incident direction is 45 degrees, and then the LET value of the particles in the sensor material is as follows: and (4) obtaining the position of the single event upset event through the address where the numerical value of the large-scale integrated chip to be tested is upset.
As an improvement of the device, the power panel is provided with a power interface circuit, a telemetering interface circuit and a high-voltage circuit.
The power interface circuit is used for converting a primary power supply provided by the satellite platform and providing working voltage for each circuit;
the telemetering interface circuit is used for detecting the +12V and +5V working voltages so as to judge the working state of the detector;
the high-voltage circuit is used for providing proper bias voltage for the LET spectrum sensor.
The invention has the advantages that:
1. the detector can directly reflect the relation between the single event upset event and the LET spectrum of the device, on one hand, the detector provides evidence for the accuracy of LET spectrum detection, and on the other hand, the detector can improve the accuracy of a satellite single event upset rate prediction method;
2. the detector integrates LET spectrum detection and single event upset detection into one probe, and is more visual in analyzing single event effect compared with data obtained by respectively and independently detecting in other schemes in the prior art, and satellite resources can be saved by the design.
3. According to the on-orbit actual measurement result, the single-particle upset times and the corresponding relation between the single-particle upset and the LET, which are obtained by the detector, have good conformity with the ground calibration, and the detection mode is very effective.
Drawings
FIG. 1 is a schematic view of an integrated probe of the present invention;
FIG. 2 is an electrical schematic block diagram of a single event effect detector of the present invention;
FIG. 3 is a three-dimensional schematic diagram of a single event effect detector of the present invention;
FIG. 4 is a three-view diagram of the structure of the single event effect detector of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
The invention changes the structural design of the original LET spectrum detector, adds a large-scale integrated chip to be detected between two thin silicon semiconductor sensors, and directly corresponds single-particle overturning to an LET value.
1. Composition and connection relation
The single event effect detector of the invention comprises: the integrated probe, the circuit board and the case structure are composed of an LET spectrum sensor and a large-scale integrated chip to be tested. The case comprises a bottom plate, a top plate and four side plates, wherein 4 printed circuit boards are arranged inside the case, and the 4 printed circuit boards are respectively 1 motherboard (used for signal connection and probe installation among the circuit boards), 1 analog board (used for processing sensor signals), 1 computer board (used for processing collected data) and 1 power supply board (used for supplying power to the sensor and each circuit module). The motherboard is parallel to the mounting surface, and the power supply board, the computer board and the simulation board are parallel to each other, perpendicular to the motherboard and inserted on the motherboard.
The probe is fixed on a mother board and is divided into three layers, wherein the upper layer is an LET spectrum sensor and a corresponding preamplification circuit thereof, the LET spectrum sensor and the preamplification circuit thereof are fixed in a shielding box by using screws, the middle layer is a large-scale integrated chip to be detected, and the lower layer is an LET spectrum sensor and a corresponding preamplification circuit thereof, and the LET spectrum sensor and the preamplification circuit thereof are fixed in the shielding box by using screws; the two shield boxes are the same size.
The two shielding boxes are arranged on the front surface and the back surface of the mother board, so that the edges of the two shielding boxes correspond to each other. The chip to be tested is directly welded on the motherboard at the position corresponding to the sensor, so that the chip to be tested is arranged between the sensitive surfaces of the two sensors.
The signal and power supply wiring of the large-scale integrated chip to be tested are all routed to the inner layer of the circuit board; the output signal of the LET spectrum sensor is connected to the front amplifier circuit, and the output of the front amplifier circuit is connected to the bonding pad and then led out to the analog board through the inner layer of the motherboard, so that further amplification and collection are performed.
2. Detection scheme and operating principle
The detection scheme is shown in figure 1. The probe is a telescope system consisting of 2 silicon sensors. The large-scale integrated chip to be measured is positioned between the two sensors to form a sandwich-type probe structure. The thickness of the sensor was 300 μm and the diameter of the sensor was 26 mm. When high-energy protons or heavy ions are incident to the probe, electron-hole pairs are formed inside the sensor due to the ionization effect of radiation, and the electron-hole pairs are collected to the output end of the sensor under the action of a high-voltage electric field inside the sensor to generate a charge output signal. Particle deposition energy information can be obtained through analysis of a back end circuit, and a radiation LET spectrum is calculated by combining the thickness of the sensor and the particle incidence direction information.
LET is defined as the energy loss per path length of the charged particle, i.e.:
LET＝ΔE/Δx
where Δ E is the energy lost by the charged particle (MeV) and Δ x is the mass length (mg/cm) through which the charged particle passes2)。
By definition, LET detection works on the principle that a measurement particle loses energy Δ E in the sensor. And calculating the path length d of the particles passing through the sensor according to the direction of the particles and the thickness of the sensor, wherein the LET of the particles in the sensor material is equal to delta E/d.
The LSI chips tested were 512K 8 SRAM, model AT68166HT, from ATMEL. The total dose resistance is 300krad (Si), and the single particle locking threshold is more than or equal to 80MeV/mg/cm 2. The kernel of the device is divided into four parts, each part can be initialized and assigned (for example, each byte is set to 0x55), the data packet is read and judged before the end of each data packet cycle, and the address of the position where the data packet is overturned is recorded. Since the number of particles of the LET value that can cause device flip is much less than 1/s, the period of the data packet is set to 1s, i.e. a single event flip event can be associated with a captured particle.
3. Implementation scheme of electronics
The LET spectrum detection comprises two silicon semiconductor detectors, and the signal of each sensor is output respectively without signal coincidence. And each path of signal is subjected to amplification and peak-hold processing and then is subjected to A/D acquisition. The deposition energy range measurable by each sensor is above 70keV, and the mass thickness is 70mg/cm due to the thickness of the sensor being 300 mu m2The minimum measurable LET value is 0.001 MeV/(mg/cm) according to LET definition2) The pre-amplification output signal is amplified in multiple stages, and the upper limit of the measurable LET value can reach 100 MeV/(mg/cm)2)。
The schematic block diagram of the electronics is shown in fig. 2, and the electronics part comprises two paths of front-end amplifier forming circuits, two paths of main amplifiers, two paths of peak-hold circuits, two paths of A/D conversion circuits, an FPGA control circuit, a 1553 communication interface, a data storage SRAM, a crystal oscillator, a telemetering interface and a power supply interface.
As shown in fig. 3 and 4, the probe of the present invention has a cubic structure with three connectors on the top: x01 is the power and telemetry contacts, and X02 and X03 are the primary and backup for 1553B serial communications.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (7)
1. A single event effect detector is characterized by comprising a case, an integrated probe and four circuit boards, wherein the integrated probe and the four circuit boards are arranged in the case;
the integrated probe includes: the large-scale integrated chip comprises two LET spectrum sensors and a large-scale integrated chip to be tested, wherein the large-scale integrated chip is positioned between the two LET spectrum sensors; the chip is used for capturing a single event upset event;
the four circuit boards include: the circuit board comprises a mother board for connecting signals among circuit boards and fixing an integrated probe, an analog board for processing signals of the LET spectrum sensor, a computer board for acquiring and storing data and a power supply board for supplying power to the LET spectrum sensor and the circuit boards.
2. The single event effect detector of claim 1; the integrated probe is characterized by comprising three layers, wherein the upper layer is an LET spectrum sensor fixed in an upper shielding box and a corresponding preamplification forming circuit thereof, the middle layer is a large-scale integrated chip to be detected, the lower layer is an LET spectrum sensor fixed in a lower shielding box and a corresponding preamplification circuit thereof, and the sizes of the upper shielding box and the lower shielding box are the same; the two shielding boxes are arranged on the front surface and the back surface of the mother board, so that the edges of the two shielding boxes correspond to each other; the large-scale integrated chip to be tested is directly welded on the motherboard and is arranged between the sensitive surfaces of the two sensors; the pre-amplification shaping circuit is used for performing voltage conversion and shaping amplification on the charge pulse signal output by the LET spectrum sensor.
3. The single event effect detector of claim 2; the signal line and the power line of the large-scale integrated chip to be tested are arranged on the inner layer of the motherboard; the outputs of the two preamplification circuits are respectively led out to the analog board through the inner layer of the motherboard after being connected to the bonding pad of the motherboard.
4. The single event effect detector of claim 2; the analog board is provided with two circuits formed by connecting an amplifying circuit, a peak-hold circuit and a trigger circuit in series, and one circuit receives a signal output by a pre-amplifying forming circuit in an upper shielding box; the other path receives the signal output by the preamplification forming circuit in the lower shielding box;
the amplifying circuit is used for further amplifying the signal output by the pre-amplifying and shaping circuit;
the peak-hold circuit is used for holding the peak value of the output signal of the amplifying circuit;
and the trigger circuit is used for outputting a trigger signal according to the condition that the signal amplitude exceeds the set threshold value, and informing the computing board to carry out A/D conversion on the signal output by the peak-hold circuit.
5. The single event effect detector of claim 4; the computer board is provided with two paths of A/D conversion circuits, an FPGA control circuit, a crystal oscillator circuit, a data storage SRAM and a 1553 interface; the two A/D conversion circuits are respectively connected with one peak protection circuit; the 1553 interface is an interface between the detector and the satellite platform;
the two A/D conversion circuits are respectively used for carrying out analog-to-digital conversion on the peak value of the signal output by the peak protection circuit connected with the two A/D conversion circuits under the control of the FPGA control circuit,
the crystal oscillator circuit is used for providing a 16MHz clock for the FPGA control circuit;
and the FPGA control circuit is used for controlling the A/D conversion circuits to work after receiving the trigger signal, storing the signal amplitude numerical values output by the two A/D conversion circuits into the data storage SRAM, reading the data of the large-scale integrated chip to be tested and storing the data into the data storage SRAM, and reading the data of the data storage SRAM and sending the data to the satellite platform through a 1553 interface.
6. The single event effect detector of claim 5; the satellite platform is characterized in that the satellite platform packs and downloads the incident moment of the incident particles, the signal amplitudes output by the two paths of A/D conversion circuits and the addresses of the large-scale integrated chips to be detected, wherein the addresses are turned over by the numerical values, and the addresses are transmitted to an upper computer on the ground;
the upper computer calculates the loss energy delta E according to the signal amplitude numerical values output by the two A/D conversion circuits, calculates the length D of a path through which the particles pass in the sensor according to the thickness of the sensor, namely the thickness of the sensor when the incident direction is 45 degrees, and then the LET value of the particles in the sensor material is as follows: and (4) obtaining the position of the single event upset event through the address where the numerical value of the large-scale integrated chip to be tested is upset.
7. The single event effect detector of claim 1; the power panel is provided with a power interface circuit, a telemetering interface circuit and a high-voltage circuit;
the power interface circuit is used for converting a primary power supply provided by the satellite platform and providing working voltage for each circuit;
the telemetering interface circuit is used for detecting the +12V and +5V working voltages so as to judge the working state of the detector;
the high-voltage circuit is used for providing proper bias voltage for the LET spectrum sensor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112946397A (en) * | 2021-02-09 | 2021-06-11 | 中国科学院近代物理研究所 | Air high-temperature test box for heavy ion irradiation of electronic device |
| CN113109859A (en) * | 2021-04-08 | 2021-07-13 | 西北核技术研究所 | Method for obtaining heavy ion single event upset cross section with low LET value |
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| CN113109859A (en) * | 2021-04-08 | 2021-07-13 | 西北核技术研究所 | Method for obtaining heavy ion single event upset cross section with low LET value |
| CN113109859B (en) * | 2021-04-08 | 2024-04-30 | 西北核技术研究所 | Method for obtaining low LET value heavy ion single event upset section |
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