CN111947791B - Infrared radiation detection device and dark field backscattering optical reading method - Google Patents
Infrared radiation detection device and dark field backscattering optical reading method Download PDFInfo
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The invention is suitable for the radiation detection field, and provides an infrared radiation detection device and a dark field back scattering optical reading method, which comprises an infrared transparent substrate, an optical transparent substrate and a connecting ring, wherein the middle position of the bottom of the infrared transparent substrate is connected with a thermo-optic modulation unit through a support column, the thermo-optic modulation unit comprises an infrared absorption layer and an optical microcavity layer positioned on the bottom surface of the infrared absorption layer, a nanoparticle layer is arranged in the optical microcavity layer, a lens system is arranged at the top of the optical transparent substrate, a photoelectric detector is arranged at the bottom of the optical transparent substrate, a photosensitive unit is arranged in the photoelectric detector, and the connecting ring is connected with the infrared transparent substrate and the optical transparent substrate through annular ports at two ends and forms a closed vacuum cavity with a certain height, the volume and the weight of the system are relatively small, and the miniaturized detection system is easy to realize.
Description
Technical Field
The invention belongs to the field of radiation detection, and particularly relates to an infrared radiation detection device and a dark field backscattering optical reading method.
Background
The main principle of the optical reading method is to convert the heat-sensitive electrical effect generated by the heat absorption of infrared radiation (including medium-long wave infrared to far-infrared electromagnetic radiation) into heat-sensitive mechanical effect or optical effect, abandon the heat-sensitive electrical effect, read the change of the optical parameter of the illuminating light caused by mechanical change or optical change by using a low-cost visible light or near-infrared illuminating light source and a detector thereof, and indirectly measure the variation of the heat effect of the infrared radiation. The existing optical reading methods are basically divided into reflection type reading and transmission type reading, the two types of optical reading methods belong to bright field detection, background light noise is large, sensitivity is influenced, and meanwhile, transmission type optical reading needs to be carried out on the optical front end and the infrared common light path, so that an optical system is complex and large in size.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide an infrared radiation detection apparatus and a dark field backscattering optical readout method, which are intended to solve the technical problems of large noise, poor sensitivity and complex system of the conventional optical readout method.
The invention adopts the following technical scheme:
on the one hand, infrared radiation detection device includes infrared absorption structure, optics transparent substrate and go-between, infrared absorption structure includes infrared transparent substrate, support column and thermophoto modulation unit, infrared transparent substrate bottom intermediate position passes through the support column is connected thermophoto modulation unit, thermophoto modulation unit includes infrared absorbing layer and the optics microcavity layer that is located infrared absorbing layer bottom surface, be equipped with the nanoparticle layer in the optics microcavity layer, optics transparent substrate top is equipped with lens system, optics transparent substrate bottom is equipped with photoelectric detector, be equipped with photosensitive unit in the photoelectric detector, the go-between passes through the annular mouth at both ends and connects infrared transparent substrate and optics transparent substrate to form the closed vacuum cavity that has certain height.
Furthermore, the optical microcavity layer sequentially comprises a visible light reflecting layer, a thermo-optic thin film layer and a high refractive index layer from top to bottom, and the nanoparticle layer is attached to or embedded in the bottom surface of the thermo-optic thin film layer.
Furthermore, the thermo-optic modulation unit is a single group, the lens system is a single-channel optical system, and the photosensitive unit is a single unit.
Furthermore, the thermo-optic modulation units are arranged in a horizontal array, each thermo-optic modulation unit is connected with the bottom of the infrared transparent substrate through a support column, the lens system is a multi-channel optical system consisting of a plurality of micro lenses arranged in the horizontal array, a plurality of diaphragms are arranged between the optical transparent substrate and the photoelectric detector and are arranged in the horizontal array, and the photosensitive units are arranged in the horizontal array.
Furthermore, the annular openings at the two ends of the connecting ring are large and small, the opening at one end connected with the infrared transparent substrate is large, and the opening at one end connected with the optical transparent substrate is small, so that a circular truncated cone shape is formed.
Furthermore, the support column is made of low heat-conducting medium material, and the cross-sectional area is 4-36 μm2。
Further, a cavity is formed between the thermo-optic modulation unit and the infrared transparent substrate, and the height of the cavity ranges from 2 to 20 micrometers.
In another aspect, the dark field backscatter optical readout method comprises the steps of:
s1, irradiating the coupling system composed of the optical microcavity layer and the nanoparticle layer by visible or near-infrared optical radiation at a large angle of more than 45 degrees, wherein the external infrared radiation is absorbed by the infrared absorption structure to cause temperature change, the temperature change causes the change of the optical resonance condition of the coupling system, and the optical scattering spectrum of the nanoparticles shifts along with the temperature change;
s2, collecting the backward scattered light generated by the optical radiation irradiation coupling system through the lens system, and detecting the backward scattered light by the photoelectric detector;
and S3, obtaining the corresponding relation between the scattering light intensity and the intensity or temperature of the external infrared radiator through data processing and radiation temperature calibration.
Further, the lens system is a single-channel optical system, and the photodetector includes a single photosensitive unit therein.
Furthermore, the lens system is a multi-channel optical system composed of a plurality of micro lenses arranged in a horizontal array, a plurality of diaphragms are arranged at the top of the photoelectric detector and are arranged in a horizontal array, and a plurality of photosensitive units arranged in a horizontal array are contained in the photoelectric detector.
The invention has the beneficial effects that: the invention provides an infrared radiation detection device and a dark field backscattering optical reading method, wherein dark field scattered light is adopted for reading, and compared with the traditional bright field reflected light reading, the dark field scattered light reading method has lower noise and higher sensitivity; the invention adopts the scattered light collection technology based on the micro-lens array, can greatly reduce the volume and the weight of the optical reading system, and is easy to realize a miniaturized detection system; compared with a mechanical optical reading system, the optical reading system has lower manufacturing cost.
Drawings
FIG. 1 is a block diagram of an infrared radiation detection device provided by an embodiment of the present invention;
FIG. 2 is a block diagram of a thermo-optic modulation unit according to an embodiment of the present invention;
FIG. 3 is another block diagram of an infrared radiation detection device provided in an embodiment of the present invention;
FIG. 4 is a scattering spectrum distribution diagram of a microcavity-particle coupling system using PDMS thermo-optic films at different temperatures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 shows a structure of an infrared radiation detection apparatus provided by an embodiment of the present invention, and only a part related to the embodiment of the present invention is shown for convenience of explanation.
As shown in fig. 1 to 3, the present embodiment provides an infrared radiation detecting apparatus comprising an infrared absorbing structure, an optically transparent substrate 2 and a connection ring 3, the infrared absorption structure comprises an infrared transparent substrate 1, support pillars 4 and a thermo-optic modulation unit, the middle position of the bottom of the infrared transparent substrate 1 is connected with the thermo-optic modulation unit through the support column 4, the thermo-optical modulation unit comprises an infrared absorption layer 5 and an optical microcavity layer 6 positioned on the bottom surface of the infrared absorption layer, a nano particle layer 7 is arranged in the optical microcavity layer 6, a lens system 8 is arranged at the top of the optical transparent substrate 2, the bottom of the optical transparent substrate 2 is provided with a photoelectric detector 9, a photosensitive unit 10 is arranged in the photoelectric detector 9, the connecting ring 3 is connected with the infrared transparent substrate 1 and the optical transparent substrate 2 through annular ports at two ends, and forms a closed vacuum cavity with a certain height.
The infrared absorption layer 5 in the thermo-optic modulation unit can adopt a traditional multilayer film to obtain higher absorption rate at a common long-wavelength infrared band of 8-14 μm, and can also adopt a surface micro-nano structure to obtain high absorption rate at one or more narrow spectrums or obtain high absorption rate at a plurality of spectrums. By means of SiO2The structural material of the support column 12 is cylindrical and has a cross-sectional dimension of 4-36 μm2Range, thermal conductivity can be greatly reduced.
In this embodiment, the optical microcavity layer 6 is sequentially formed by a visible light reflecting layer 11, a thermo-optic thin film layer 12 and a high refractive index layer 13 from top to bottom, and the nanoparticle layer 7 is attached to or embedded in the bottom surface of the thermo-optic thin film layer 12. The optical microcavity layer 6 is actually an FP cavity reflection filter, and when visible light or near-infrared light enters from the high refractive index layer 13 side, multi-beam interference of reflected waves is generated in the FP cavity to form a cavity mode. The wavelength position and bandwidth of the cavity modes are determined by the cavity layer thickness (here, mainly the thickness of the thermo-optic film layer) and the reflectivity of the cavity walls. When the nano-particle layer exists on the surface of the micro-cavity, under a proper condition, a cavity mode and a nano-particle excitation coupling resonance mode appear, and then the nano-particle is scattered to a far field. When the nanoparticle layer is embedded in the microcavity layer, resonant scattering modes of the cavity and particle coupling can still be excited.
In this embodiment, optically transparent Polydimethylsiloxane (PDMS) is selected as the material of the thermo-optic film layer 12, and PDMS has a high linear negative thermo-optic coefficient up to-4.5 × 10-4K-1. Other alternative materials for thermo-optic films in common use are silicon (1.8X 10)-4K-1). The backscattering intensity spectra of the constructed nanoparticle microcavity obtained at different temperatures at an incident angle θ of 70 ° are shown in fig. 4, taking the thickness of PDMS as 2 μm. It can be seen from the results in the graph that the resonance scattering spectrum undergoes a blue shift when the temperature range is changed from 0 ℃ to 150 ℃, the amount of shift increasing with increasing wavelength. Defining a relative temperature sensitivity parameter
Wherein WkRepresenting the order of modulesThe amount of wavelength drift per unit temperature of the number k, i.e. the temperature sensitivity, Delta lambdakRepresenting the corresponding line width versus sensitivity parameter at that mode. RTThe sensitivity, R, of the change in light intensity of the microcavity scattering spectrum as the ambient temperature changes can be characterizedTThe larger the relative change in the intensity of the scattered light at the resonance wavelength of the corresponding mode in a certain temperature change range. For each FP cavity mode, a corresponding temperature variation range Δ T ═ λ can also be calculatedk-λk+1)/Wk. The relative temperature sensitivity parameters R at different resonance wavelengths in FIG. 4 were calculated by linear fitting of the temperature and resonance wavelengthTAnd a measurable temperature range Δ T, the results are shown in table 1 below. Different FP cavity modes show different characteristics when facing temperature change, the temperature sensitivity of the mode 6 is the highest, and the range of temperature measurement is the widest, which shows that the mode can be used for detecting high-temperature infrared objects; the highest relative temperature sensitivity of mode 10 indicates that this mode can be used to achieve infrared object detection with a relatively high temperature resolution requirement and a relatively narrow temperature range. Therefore, in practical use, according to the requirements of different temperature resolutions and temperature ranges, the proper resonance scattering wavelength and bandwidth can be selected for measurement.
TABLE 1 resonance wavelength linewidth, temperature sensitivity, relative temperature sensitivity and measurable temperature range under different FP modes
As a specific structure, as shown in fig. 1, the thermo-optic modulation unit is a single group, the lens system 8 is a single-channel optical system, and the photosensitive unit 10 is a single unit.
As another specific structure, as shown in fig. 3, the thermo-optic modulation units have multiple groups and are arranged in a horizontal array, each group of thermo-optic modulation units is connected with the bottom of the infrared transparent substrate 1 through a supporting column 4, the lens system 8 is a multi-channel optical system composed of multiple microlenses arranged in a horizontal array, multiple diaphragms 14 are arranged between the optical transparent substrate 2 and the photodetectors 9 and are arranged in a horizontal array, and multiple photosensitive units 10 are arranged in a horizontal array. When the thermo-optic modulation units on the infrared absorption structure are arranged in a horizontal array, a plurality of microlenses arranged in the horizontal array can be adopted for collecting corresponding scattered light, and then the scattered light is subjected to spatial filtering through the diaphragm array and is detected by the area array photosensitive unit on the CCD or CMOS image sensor. And finally, obtaining the image distribution of the scattered light intensity through a multi-channel imaging algorithm, and further restoring the target thermal image. After the radiation temperature is calibrated, the temperature distribution of the target can be obtained. Therefore, the embodiment can be used for infrared thermal imaging and imaging thermometry.
The two ends of the connecting ring 3 are provided with a large annular opening and a small annular opening, the end connected with the infrared transparent substrate 1 is provided with a large opening, and the end connected with the optical transparent substrate 2 is provided with a small opening to form a circular truncated cone shape.
A cavity is formed between the thermo-optical modulation unit and the infrared transparent substrate 1, and the height range of the cavity is 2-20 mu m.
The working principle of the device is as follows: when external infrared radiation enters the infrared absorption structure and irradiates the thermo-optic modulation unit, the infrared absorption layer in the thermo-optic modulation unit absorbs the external infrared radiation to generate heat, and the temperature of the modulation unit rises. The change in temperature causes a change in the refractive index of the thermo-optic film in the optical microcavity. Thereby causing the shift of the resonance spectrum of the microcavity, such as the shift of the peak wavelength from λ before temperature rise to λ - Δ λ after temperature rise. When infrared optical radiation irradiates on the thermo-optic modulation unit at a large angle, resonant backscattered light is excited in a coupling system consisting of the optical microcavity and the nano-particles. The back scattering is collected by a lens system on the optical transparent substrate and then converged or imaged on a light detector, so that a scattered light intensity signal is obtained. The peak of the scattering spectrum will also shift to some extent when the temperature of the thermo-optic modulation unit changes, resulting in a change in the intensity of a fixed wavelength in the spectrum. The strength of the fixed wavelength is detected by the photoelectric detector, so that the information of temperature change and the strength of external infrared radiation can be obtained. And the temperature information of the external radiator can be obtained after radiometric calibration. Under the condition of proper microcavity and nanoparticle structure parameters, scattering peaks of different orders can exist simultaneously in an optical wave band. Generally, the scattering peak of long wave has larger bandwidth, and the scattering peak of short wave has smaller bandwidth. The bandwidth is large, the range of the measured temperature is large, but the precision is slightly low; the bandwidth is small, the range of the temperature measurement is small, but the precision is high. Therefore, different scattering orders (wavelengths) can be selectively detected according to the sensitivity requirement, and different temperature measurement ranges and accuracy requirements can be met.
Based on the infrared radiation detection device, the present embodiment further provides a dark field backscattering optical readout method, including the following steps:
s1, irradiating the coupling system composed of the optical microcavity layer and the nanoparticle layer by visible or near infrared optical radiation at a large angle of more than 45 degrees, wherein the external infrared radiation is absorbed by the infrared absorption structure to cause temperature change, the temperature change causes the optical resonance condition of the coupling system to change, and the optical scattering spectrum of the nanoparticles shifts along with the temperature change.
The optical microcavity including the thermo-optic film also has a shift in the resonance peak wavelength to some extent when the temperature changes. Generally, the larger the thermo-optic coefficient, the larger the shift in the resonance peak wavelength. If a fixed wavelength in the resonance spectrum is measured, the transmitted or reflected intensity of that wavelength will vary with temperature. The optical microcavity in the invention can be a Fabry-Perot microcavity or a photonic crystal microcavity, and the surface nanoparticle structure can be a metal conductive particle or a dielectric particle with high optical refractive index, and the shape of the optical microcavity can be spherical, disc-shaped, circular or other shapes. The nano-particles can be positioned on the surface of the micro-cavity and can also be positioned in the micro-cavity, and the size of the nano-particles is in the range of 50-300 nm.
For a reflective optical microcavity, when a surface has nanoparticles, there is a scattering spectrum in addition to the specular reflection spectrum if there is optical radiation that strikes the surface at a large angle. When no microcavity is provided, the scattering spectrum of the nano particles has a wider bandwidth; when the microcavity exists, a hybrid mode containing the composite characteristics of a cavity mode and a particle scattering resonant mode is present, and the hybrid mode is characterized by narrower bandwidth than a pure particle resonant mode, which is mainly due to the fact that the optical microcavity has a higher Q value, so that narrow-spectrum resonance can be realized. In fact, the wavelength of the cavity mode and the required bandwidth thereof can be obtained by adjusting the parameters of the structural layer of the microcavity. Therefore, specific resonance wavelength and proper bandwidth can be obtained by adjusting the structural parameters of the microcavity according to requirements. On the other hand, the higher order mode in the hybrid mode has a narrower bandwidth than the lower order mode, so selecting the appropriate mode order is also a method for obtaining the appropriate bandwidth.
When the refractive index of the thermo-optic film changes with temperature, the optical scattering spectrum of particles in the coupling system shifts, and the scattering intensity of a specific scattering wavelength increases or decreases. By measuring the amount of change in the optical scattering intensity, the amount of change in temperature can be determined, and the amount of change in the intensity of infrared radiation can be known.
And S2, collecting the backward scattered light generated by the optical radiation illumination coupling system through the lens system, and detecting the backward scattered light by the photoelectric detector.
As a specific structure, a lens system for collecting scattered light adopts a single-channel optical system, a unit detector is adopted for measuring the scattered spectrum intensity of a certain wave band or a single wavelength, and a corresponding wavelength optical filter is added.
As another specific structure, the lens system for collecting scattered light adopts a multi-channel optical system consisting of a plurality of micro lenses arranged in a horizontal array, an optical image sensor in an area array form is adopted for measuring the scattered spectrum intensity of a certain waveband or single wavelength, and a corresponding wavelength filter is added.
And S3, obtaining the corresponding relation between the scattering light intensity and the intensity or temperature of the external infrared radiator through data processing and radiation temperature calibration.
The infrared radiation intensity and its distribution are calculated based on the acquired data of the detector or image sensor, and a certain algorithm is required to perform data processing. After radiation calibration is performed by a standard black body, the measured intensity data can also be converted into temperature data.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. Infrared radiation detection device, its characterized in that, including infrared absorption structure, optics transparent substrate and go-between, infrared absorption structure includes infrared transparent substrate, support column and thermo-optic modulation unit, infrared transparent substrate bottom intermediate position passes through the support column is connected thermo-optic modulation unit, thermo-optic modulation unit includes infrared absorbing layer and the optics microcavity layer that is located infrared absorbing layer bottom surface, be equipped with the nanoparticle layer in the optics microcavity layer, optics transparent substrate top is equipped with lens system, optics transparent substrate bottom is equipped with photoelectric detector, be equipped with photosensitive unit in the photoelectric detector, the go-between passes through the annular mouth at both ends and connects infrared transparent substrate and optics transparent substrate to form the closed vacuum chamber that has a take the altitude, wherein optics microcavity layer is from last to being visible light reflection layer, optical reflection layer, go-between in proper order down, The nano particle layer is attached to or embedded into the bottom surface of the thermo-optic thin film layer.
2. The infrared radiation detection device as recited in claim 1, wherein said thermo-optic modulation elements are a single set, said lens system is a single channel optical system, and said light sensitive elements are a single element.
3. The infrared radiation detection device as claimed in claim 1, wherein the thermo-optic modulation units are arranged in a plurality of groups in a horizontal array, each group of thermo-optic modulation units is connected to the bottom of the infrared transparent substrate through a support column, the lens system is a multi-channel optical system consisting of a plurality of micro-lenses arranged in a horizontal array, a plurality of diaphragms are arranged between the optical transparent substrate and the photodetectors in a horizontal array, and the photosensitive units are arranged in a plurality of groups in a horizontal array.
4. The infrared radiation detection device as recited in any one of claims 1 to 3, wherein the annular openings at both ends of the connection ring are larger and smaller, the opening at one end connected to the infrared transparent substrate is larger, and the opening at one end connected to the optical transparent substrate is smaller, so as to form a circular truncated cone shape.
5. The infrared radiation detection device of claim 4, wherein the support columns are of low thermal conductivity dielectric material with cross-sectional area of 4-36 μm.
6. The infrared radiation detection device of claim 5, wherein a cavity is formed between the thermo-optic modulation unit and the infrared transparent substrate, and a height of the cavity is in a range of 2-20 μm.
7. A dark field backscattering optical readout method, characterized in that the method comprises the steps of:
s1, irradiating the coupling system composed of the optical microcavity layer and the nanoparticle layer by visible or near-infrared optical radiation at a large angle of more than 45 degrees, wherein the external infrared radiation is absorbed by the infrared absorption structure to cause temperature change, the temperature change causes the change of the optical resonance condition of the coupling system, and the optical scattering spectrum of the nanoparticles shifts along with the temperature change;
s2, collecting the backward scattered light generated by the optical radiation irradiation coupling system through the lens system, and detecting the backward scattered light by the photoelectric detector;
and S3, obtaining the corresponding relation between the scattering light intensity and the intensity or temperature of the external infrared radiator through data processing and radiation temperature calibration.
8. The dark field backscatter optical readout method of claim 7, wherein the lens system is a single channel optical system and the photodetector comprises a single photosensitive element.
9. The dark field backscattering optical readout method according to claim 7, wherein the lens system is a multi-channel optical system consisting of a plurality of microlenses arranged in a horizontal array, the photodetector has a plurality of apertures on top and is arranged in a horizontal array, and the photodetector includes a plurality of photosensitive units arranged in a horizontal array.
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