CN111934100A - Double-tuned electromagnetic induction transparent unit structure insensitive to polarization - Google Patents
Double-tuned electromagnetic induction transparent unit structure insensitive to polarization Download PDFInfo
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- CN111934100A CN111934100A CN202010812068.5A CN202010812068A CN111934100A CN 111934100 A CN111934100 A CN 111934100A CN 202010812068 A CN202010812068 A CN 202010812068A CN 111934100 A CN111934100 A CN 111934100A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/004—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective using superconducting materials or magnetised substrates
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Abstract
The invention relates to a double-tuned multi-band electromagnetic induction transparent unit structure insensitive to polarization, which comprises a substrate layer, a dielectric layer and a top layer, wherein the substrate layer and the dielectric layer are square, the top layer is a graphene square ring-shaped nested vanadium dioxide square block, a cross-shaped etching part is etched on the vanadium dioxide square block, and the dielectric layer at the bottom is exposed. The invention has the electromagnetic induction transparent phenomenon that multiband polarization is insensitive, and the electromagnetic induction transparent window can be respectively tuned by voltage and temperature, thereby having the electromagnetic induction transparent characteristic of double tuning.
Description
Technical Field
The invention relates to the technical field of electromagnetic metamaterials, in particular to a double-tuned polarization insensitive electromagnetic induction transparent unit structure.
Background
The electromagnetic induction transparent effect refers to a quantum interference effect between an electromagnetic field and an atomic level system in the interaction process of a material medium and the electromagnetic field. This effect enables a larger transmission peak to be present at the resonance excitation frequency of the transmission spectrum where the reflection spectrum is originally smaller. In recent years, new tunable materials such as liquid crystal, superconducting, graphene, and solid plasma materials have been introduced into metamaterials to achieve tunable characteristics of EIT. A graphene metamaterial is designed in the literature of analog of dual-controlled electromagnetic induced transparency on a graphene metal, Carbon 142(2019)354-362, and the dual-tuned electromagnetic induced transparency phenomenon is realized by changing the Fermi level of graphene and the incident angle of an incident electromagnetic wave. A metamaterial structure is designed in documents of dynamic Temperature-Voltage Controlled Multifunctional Device Based on VO2 and Graphene Hybrid metals, namely a Perfect Absorber and a high efficiency Polarization Converter, and Nanomaterials 2019,9 and 1101 to realize double-tuned Perfect wave absorption and efficient Polarization converters. However, the polarization insensitive electromagnetically induced transparency phenomenon of dual-parameter tunable multiband remains a challenge.
Vanadium dioxide (VO)2) The phase change material is a novel phase change material discovered in recent years, and can show different characteristics under different temperature conditions, specifically, the phase change material has an insulator band structure at a temperature of 300K (room temperature condition) and shows a metal surface state at a temperature of about 340K. When the temperature is recovered, the material characteristics are also changed, and the material is the memoryless material. Therefore, the method has wide application prospect in the aspects of devices such as switches and the like under the environment of temperature change.
Graphene (Graphene) is a novel two-dimensional material, the Fermi level of the Graphene can be changed under the regulation and control of different external voltages, the conductivity and the dielectric constant of the Graphene also change, and the Graphene is a flexible electrically-tuned two-dimensional material. And the conductivity and dielectric constant of the graphene do not change with temperature.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides an electromagnetically-induced transparent unit structure which can be double-tuned and insensitive to polarization.
In order to achieve the above object, the present invention adopts the following technical solutions.
The double-tuned polarization insensitive electromagnetic induction transparent unit structure comprises a substrate layer, wherein the front surface of the substrate layer is coated with a dielectric layer, a graphene square ring is manufactured on the dielectric layer, and the pattern of the graphene square ring is formed by the part between a square with a larger center and a square with a smaller center overlapped; a square vanadium dioxide layer is coated on the dielectric layer inside the graphene square ring; a cross-shaped etching part is etched in the vanadium dioxide layer, and the dielectric layer at the bottom is exposed; one transverse direction of the cross-shaped etching part is parallel to one side of the square vanadium dioxide layer, and the vanadium dioxide layer is etched through at two ends of the cross-shaped etching part; one vertical column of the cross-shaped etching part is parallel to the other side of the vanadium dioxide layer, and one end of the cross-shaped etching part etches the vanadium dioxide layer through; the substrate layer and the dielectric layer are square.
Specifically, the thickness of the substrate layer is 1-6 μm, and the thickness of the dielectric layer is 0.5-3 μm.
Specifically, the side length of the square of the substrate layer and the dielectric layer is 100-120 μm.
Specifically, the dielectric layer material is a material which can be processed and has a dielectric constant not more than 2, including magnesium fluoride.
Specifically, the width of the transverse and vertical etching parts of the etched cross-shaped etching part in the vanadium dioxide layer is 1-5 μm, and the thickness of the vanadium dioxide layer is 1-3 μm.
Specifically, the side length of the outer square ring of the graphene square ring is 80-100 microns, the width of the graphene square ring is 20-60 microns, and the thickness of the graphene square ring is 1-2 nm.
Specifically, the base layer material is a material which can be processed and has a dielectric constant not greater than 20, and comprises silicon dioxide, silicon, sapphire, glass fiber and silicon carbide.
For the unit structure, no matter the external electromagnetic wave is selected to be transverse electric wave or transverse magnetic wave, when the unit structure is transmitted from the graphene square ring and the dielectric layer on the top layer to the substrate layer, the unit structure can generate electromagnetic induction transparent characteristics at certain specific frequency points.
When the polarization angle of the selected external electromagnetic wave is changed from 0 to 90 degrees, the frequency point of the unit structure generating the electromagnetic induction transparent characteristic is unchanged.
When the applied voltage or the ambient temperature is changed, the obtained electromagnetically induced transparent window is changed, namely the applied voltage and the temperature change can respectively have a tuning effect on the electromagnetically induced transparent phenomenon.
The invention relates to a double-tuned polarization insensitive electromagnetic induction transparent unit structure, namely an electromagnetic induction transparent phenomenon can be controlled through two different parameters. The invention can generate the electromagnetic induction transparent phenomenon with insensitive polarization, and has the characteristic of tunable temperature and voltage parameters, thereby having the characteristic of double tuning. Therefore, the invention has the characteristics of double tuning, insensitive polarization, multiple wave bands and the like, and is suitable for different environments and application requirements.
Drawings
FIG. 1 is a front view of the cell structure of the present invention.
Fig. 2 is a cross-sectional view of the cell structure of the present invention.
Fig. 3 is a graph of the effect of an applied voltage on the dielectric constant of graphene in an experiment.
Fig. 4 is a graph of the effect of temperature change on the dielectric constant of graphene in an experiment.
FIG. 5 is a graph showing the effect of temperature change on the dielectric constant of vanadium dioxide during an experiment.
Fig. 6 shows the response characteristics of electromagnetic waves when voltages are applied to different graphenes at a temperature of 340K according to the present invention.
Fig. 7 shows the response characteristics of electromagnetic waves when voltages are applied to different graphenes at a temperature of 300K according to the present invention.
Fig. 8 is an effect of the change in temperature of 300K and 340K on the response characteristic of the electromagnetic wave under the same voltage (uc ═ 0.3ev) in the present invention.
Fig. 9 is a response characteristic of the present invention to a change in polarization angle of an electromagnetic wave.
FIG. 10 is a comparison of the response of the inventive cell to electromagnetic waves in the light and dark modes.
Detailed Description
The invention is further illustrated by the following figures and examples.
The double-tuned polarization insensitive electromagnetic induction transparent unit structure has the characteristic of double-parameter tunability, namely, the voltage and the temperature can simultaneously adjust the response characteristic of the structure to electromagnetic waves. The structure of the invention is mainly characterized by the existence of two materials which are respectively sensitive to temperature and voltage: vanadium dioxide and graphene materials, and the conductivity and dielectric constant of vanadium dioxide are only sensitive to temperature, as shown in fig. 5, while the conductivity and dielectric constant of graphene are only sensitive to voltage, as shown in fig. 3 and 4.
The invention has the characteristic of insensitivity to the polarization mode of the electromagnetic wave, namely, the electromagnetic wave in an incident transverse wave mode and a transverse magnetic wave mode can generate an electromagnetic induction transparent phenomenon on the front surface of the structure. The graphene square ring is mainly in central symmetry in the structure, exists as a bright mode in the electromagnetic induction transparency phenomenon, and is coupled with a dark mode, so that the graphene square ring plays a leading role in the electromagnetic induction transparency result. The vanadium dioxide layer 1 exists as a dark mode, and the graphene square ring 2 is coupled with the vanadium dioxide layer 1 to generate an electromagnetic induction transparency phenomenon.
As shown in fig. 1-2, the structure of the invention specifically comprises a substrate layer 4, a dielectric layer 3 is coated on the front surface of the substrate layer 4, a graphene square ring 2 is manufactured on the dielectric layer 3, a square vanadium dioxide layer 1 is nested in the graphene square ring 2 on the dielectric layer 3, a cross-shaped etching part 1-1 is etched in the vanadium dioxide layer 1, and the dielectric layer 3 at the bottom is exposed; one transverse side of the cross-shaped etching part 1-1 is parallel to one side of the vanadium dioxide layer 1, the vanadium dioxide layer 1 is etched through at two ends, one vertical side of the cross-shaped etching part 1-1 is parallel to the other side of the vanadium dioxide layer 1, and the vanadium dioxide layer 1 is etched through at one end; the substrate layer 4 and the dielectric layer 3 are square.
During specific processing, a plurality of graphene square ring arrays are manufactured on the prepared substrate layer 4 and the prepared dielectric layer 3, and finally, the unit structure is cut according to the requirement.
Wherein, the side length p of the substrate layer 4 and the dielectric layer 3 is 100-120 μm, and the thickness is 1-6 μm (graph h1) and 0.5-3 μm (graph h2), respectively. Variations in the thickness and side length dimensions of the above materials can cause frequency shifts. The graphene is few layers, and the thickness h3 of the graphene square ring 2 is 1-2nm, which is much less than the thickness of the vanadium dioxide layer 1 (the same drawing is made in fig. 2 for convenience). The thickness of the vanadium dioxide layer 1 is 1-3 μm.
The side length l of the outer ring square of the top layer graphene square ring 2 is 80-100 mu m, and the width of the graphene square ring is 20-60 mu m (namely the side length l of the outer ring square-the side length l of the inner ring square)1). Side length of vanadium dioxide layer 1 and side length l of graphene inner ring square1And (5) the consistency is achieved. The width w of one transverse part and one vertical part of the cross-shaped etching part 1-1 is 1-5 mu m, and the length of one transverse part is consistent with the side length of the vanadium dioxide. The preferred parameters in the examples are: the side length of the top vanadium dioxide layer 1 is 20 μm, and the horizontal and vertical width w of the etched cross-shaped etching part 1-1 is 5 μm.
In the embodiment shown in FIG. 1, the etching cross portion 1-1 is vertically and horizontally symmetrical. The slight asymmetry has little effect on the results as tested experimentally.
A preferred material for the base layer 4 is silicon dioxide. Other inorganic materials such as sapphire, glass fiber, silicon carbide, silicon and the like, materials with dielectric constants within 20 can produce similar effects, but the frequency points are slightly shifted along with the increase of the dielectric constant and the corresponding loss, so that the similar results produced by changing the substrate material are within the protection scope of the invention. The preferred material for the dielectric layer 3 is magnesium fluoride, but other materials capable of being processed with a dielectric constant of not more than 2 can be used.
In the structure shown in fig. 1 and 2, when external electromagnetic waves are selected as transverse electric waves TE or transverse magnetic waves TM and are transmitted from the graphene square ring 2 and the dielectric layer 3 on the top layer to the substrate layer 4, the unit structure generates an electromagnetic induction transparent characteristic at a specific frequency point; when the polarization angle of the external electromagnetic wave is selected to change from 0 to 90 degrees, the unit structure can generate electromagnetic induction transparent characteristic at the same frequency point.
Since the vanadium dioxide material of the top layer is sensitive to temperature, when the temperature is room temperature (300K), the vanadium dioxide is equivalent to an insulator, the cross-shaped etching part 1-1 etched on the vanadium dioxide layer 1 of the top layer is equivalent to a cavity, and energy can be gathered in the cavity, so that electromagnetic induction transparency is generated. When the temperature is increased to 340K, the conductivity and the dielectric coefficient of the topological insulator layer are changed, and at the moment, the vanadium dioxide shows the metal characteristic, and the electromagnetic induction transparency effect disappears. Temperature will have an effect on the electromagnetically induced transparency response of the present cell structure. By adjusting the ambient temperature, the electromagnetically induced transparency characteristics will change.
To further illustrate the features of the present invention, experiments were conducted below on the materials described herein. The dimensional parameters of the unit structure of the materials used in the experiments are as follows: the base layer 4 is made of silicon dioxide and has a thickness of 1 μm, and the dielectric layer 3 has a thickness of 2 μm. The dimensions of the base layer 4 and the dielectric layer 3 are 120 μm on a side. The material of the dielectric layer 3 is magnesium fluoride. The side length of the square of the outer ring of the graphene square ring 2 is 80 microns, the width of the graphene square ring 2 is 60 microns, and the thickness of the graphene square ring is 1-2 nm. The thickness of the vanadium dioxide layer 1 is 1-3 μm. The horizontal and vertical widths of the cross-shaped etching part 1-1 etched in the vanadium dioxide layer 1 are both 5 micrometers. The experiment finds that the width has no influence on the experimental result.
As shown in fig. 6, when the incident electromagnetic wave is a transverse electric wave or a transverse magnetic wave at room temperature (T ═ 300K), and the applied voltage is changed so that the chemical potential of graphene increases from 0.1 to 0.8eV, respectively, the electromagnetically induced transparency characteristic still exists and the electromagnetically induced transparent window (i.e., the transmission spectrum in the present invention) undergoes a blue shift. Therefore, the electromagnetically induced transparent response can be adjusted by the applied voltage, and the change of the applied voltage only changes the conductivity and the dielectric constant of the graphene and has no influence on the conductivity and the dielectric constant of the vanadium dioxide.
As shown in fig. 7, the electrical conductivity of vanadium dioxide increases substantially when the temperature is increased to 340K, at which time there is no electromagnetically induced transparency effect. To further illustrate the phenomenon, as shown in fig. 8, when the temperature is increased from 300K to 340K when the applied voltage makes the chemical potential of graphene be 0.3eV, the change in temperature makes the characteristics of vanadium dioxide change significantly, specifically, the increase in temperature makes the characteristics of vanadium dioxide transition from insulator to metal, so that the unit structure of the present invention can generate a significant electromagnetically induced transparency phenomenon at a temperature of 300K, and the electromagnetically induced transparency phenomenon disappears at a temperature of 340K. Meanwhile, the conductivity and dielectric constant of graphene are hardly affected by temperature. Thus, it can be seen from a combination of FIGS. 6 and 7 that the applied voltage and temperature changes can be tuned to the electromagnetically induced transparency phenomenon, respectively. I.e. the invention has a double tuned electromagnetically induced transparency effect.
As shown in fig. 9, under the condition that the incident electromagnetic wave is selected to be a transverse electric wave or a transverse magnetic wave is incident, when the polarization angle of the electromagnetic wave is changed from 0 to 90 degrees, the electromagnetically induced transparent window is substantially unchanged, i.e., the present invention has the electromagnetically induced transparent characteristic that the polarization is insensitive.
The basic mechanism of the present invention for producing electromagnetically induced transparency is illustrated below in conjunction with fig. 10, which illustrates the comparison of the response of the bright mode and the dark mode of the cell of the present invention to electromagnetic waves. When only the top-layer graphene square ring exists in the structure, the graphene square ring and incident electromagnetic waves can generate resonance to generate 2 resonance points, wherein the low-frequency-band resonance point is a basic mode, the high-frequency-band resonance point is high-order harmonic, at the moment, the electromagnetic induction is transparent and is not generated, and the graphene square ring is expressed as a bright mode; when only the top vanadium dioxide layer exists in the structure, the vanadium dioxide layer cannot be coupled with incident electromagnetic waves, the transmission spectrum shows an invariant value which is approximately 1, and the vanadium dioxide layer is a dark mode. After the graphene square ring layer and the vanadium dioxide layer are nested and combined, the energy coupled by incident electromagnetic waves of the graphene square ring is coupled to the vanadium dioxide layer serving as a dark mode, the coupling is generated between the vanadium dioxide layer and the graphene square ring, the direction of a coupled electric field is opposite to the direction of the electric field of the incident electromagnetic waves, destructive interference is generated, transparent frequency points are generated, and therefore the electromagnetic induction transparency phenomenon is generated.
In conclusion, the invention can generate double-tuned electromagnetic induction transparent effect with insensitive polarization, has flexible tuning and simple structure, and is very suitable for preparing miniaturized devices.
Claims (10)
1. A double-tuned polarization insensitive electromagnetically induced transparent cell structure, characterized by: the graphene square ring structure comprises a substrate layer (4), wherein the front surface of the substrate layer (4) is coated with a dielectric layer (3), a graphene square ring (2) is manufactured on the dielectric layer (3), and the pattern of the graphene square ring (2) is formed by the part between a square with a larger center and a smaller center overlapped; a square vanadium dioxide layer (1) is coated on the dielectric layer (3) in the graphene square ring (2); a cross-shaped etching part (1-1) is etched in the vanadium dioxide layer (1) to expose the dielectric layer (3) at the bottom; one transverse side of the cross-shaped etching part (1-1) is parallel to one side of the square vanadium dioxide layer (1), and the vanadium dioxide layer (1) is etched through at two ends; one vertical end of the cross-shaped etching part (1-1) is parallel to the other side of the vanadium dioxide layer (1), and one end of the cross-shaped etching part etches the vanadium dioxide layer (1) through; the base layer (4) and the dielectric layer (3) are square.
2. A double tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 1, characterized in that the thickness of the base layer (4) is 1-6 μm and the thickness of the dielectric layer (3) is 0.5-3 μm.
3. A double-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 1, characterized in that the square sides of the substrate layer (4) and the dielectric layer (3) have a side length of 100-120 μm.
4. A double-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 1, characterized in that the material of said dielectric layer (3) is a material having a processable dielectric constant not exceeding 2, including magnesium fluoride.
5. A double tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 1, characterized in that the etched cross-shaped etching (1-1) in the vanadium dioxide layer (1) has a lateral and vertical width of 1-5 μm and the vanadium dioxide layer (1) has a thickness of 1-3 μm.
6. A double-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 1, characterized in that the outer square side of the graphene square ring (2) is 80-100 μm, the width of the graphene square ring (2) is 20-60 μm, and the thickness is 1-2 nm.
7. A double-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 1, wherein the substrate layer (4) is of a material having a processable dielectric constant of not more than 20, including silica, silicon, sapphire, glass fiber, silicon carbide.
8. The double-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in any one of claims 1 to 7, wherein the cell structure generates electromagnetically induced transparent properties at specific frequency points when transmitted from the graphene square ring (2) and the dielectric layer (3) on the top layer to the substrate layer (4) regardless of whether the applied electromagnetic wave is selected to be a transverse electric wave or a transverse magnetic wave.
9. The double-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 8, wherein the cell structure produces a frequency point of electromagnetically induced transparency characteristics which are invariant when the polarization angle of the applied electromagnetic wave is selected to vary from 0 to 90 degrees.
10. The dual-tuned polarization insensitive electromagnetically induced transparent cell structure as claimed in claim 8, wherein the resulting electromagnetically induced transparent window is altered when the applied voltage or ambient temperature is changed, i.e. the applied voltage and temperature changes are tuned to the electromagnetically induced transparency phenomenon, respectively.
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| CN113300118A (en) * | 2021-06-03 | 2021-08-24 | 桂林电子科技大学 | Double-function device for realizing electromagnetic induction transparency and perfect absorption |
| CN113948876A (en) * | 2021-11-22 | 2022-01-18 | 郑州大学 | Demetallized dynamic thermally-adjustable three-narrow-band terahertz perfect wave absorber |
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| CN113948876A (en) * | 2021-11-22 | 2022-01-18 | 郑州大学 | Demetallized dynamic thermally-adjustable three-narrow-band terahertz perfect wave absorber |
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