CN111933754A - N-type polycrystalline silicon solar cell and manufacturing method thereof - Google Patents
N-type polycrystalline silicon solar cell and manufacturing method thereof Download PDFInfo
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- CN111933754A CN111933754A CN202010819612.9A CN202010819612A CN111933754A CN 111933754 A CN111933754 A CN 111933754A CN 202010819612 A CN202010819612 A CN 202010819612A CN 111933754 A CN111933754 A CN 111933754A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 76
- 238000005530 etching Methods 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 4
- 230000006835 compression Effects 0.000 claims description 18
- 238000007906 compression Methods 0.000 claims description 18
- 238000009434 installation Methods 0.000 claims description 8
- 235000009537 plain noodles Nutrition 0.000 claims description 5
- 239000007788 liquid Substances 0.000 description 14
- 230000002378 acidificating effect Effects 0.000 description 7
- 239000005341 toughened glass Substances 0.000 description 6
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 5
- 235000017491 Bambusa tulda Nutrition 0.000 description 5
- 241001330002 Bambuseae Species 0.000 description 5
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 5
- 239000011425 bamboo Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000007605 air drying Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of battery manufacturing, in particular to an n-type polycrystalline silicon solar battery and a manufacturing method thereof. A method for manufacturing an n-type polycrystalline silicon solar cell comprises the following steps: firstly, scribing a plurality of scratches on a silicon wafer; secondly, placing the silicon wafer into an acid etching solution to etch the surface of the silicon wafer, so as to increase the surface area of the silicon wafer; adding a glass layer and a back film layer on the upper side and the lower side of the silicon wafer, and then placing the silicon wafer, the glass layer and the back film layer into a rectangular metal frame; a polycrystalline silicon solar cell manufactured by the manufacturing method of the n-type polycrystalline silicon solar cell is composed of a silicon wafer, a glass layer and a back film layer which are put in a rectangular metal frame. The manufacturing device of the n-type polycrystalline silicon solar cell comprises a rectangular cylinder, a filter plate, a flat strip, an electric push rod II, a T-shaped rod, a rotary cylinder, a motor I, a friction wheel and a convex edge, wherein the filter plate is fixedly connected onto the rectangular cylinder, and the flat strip is arranged above the rectangular cylinder.
Description
Technical Field
The invention relates to the field of battery manufacturing, in particular to an n-type polycrystalline silicon solar battery and a manufacturing method thereof.
Background
The utility model discloses a quick connect formula polycrystalline silicon battery board subassembly, this utility model discloses a quick connect formula polycrystalline silicon battery board subassembly that application number is CN201920571457.6 discloses. The utility model discloses a quick-connect type polycrystalline silicon battery board assembly, including frame subassembly, polycrystalline silicon battery board and cleaning assembly, the frame subassembly includes fixed frame, toughened glass board and bottom plate, toughened glass board fixed connection is on polycrystalline silicon battery board upper surface, bottom plate fixed connection is on polycrystalline silicon battery board's lower surface, toughened glass board, polycrystalline silicon battery board and bottom plate all fix and set up in fixed frame; the cleaning assembly is arranged on the fixing frame and used for cleaning the toughened glass plate. The utility model discloses a frame subassembly of formula of connecing soon polycrystalline silicon battery board subassembly can avoid falling on the polycrystalline silicon battery board between the ash layer, and simple structure is easy to assemble moreover, still is equipped with the clean subassembly that is used for clean toughened glass board, can clear away the dust on toughened glass board surface, improves polycrystalline silicon battery board's conversion efficiency and generating efficiency. However, this patent cannot scribe a plurality of scratches on the silicon wafer, and is inconvenient for etching the surface of the silicon wafer with an acidic etching solution.
Disclosure of Invention
The invention provides an n-type polycrystalline silicon solar cell and a manufacturing method thereof, which have the beneficial effects that a plurality of scratches can be scratched on a silicon wafer, and the surface of the silicon wafer can be conveniently etched by acidic etching liquid.
The technical scheme adopted by the invention to solve the technical problem is as follows:
a method for manufacturing an n-type polycrystalline silicon solar cell comprises the following steps:
firstly, scribing a plurality of scratches on a silicon wafer;
secondly, placing the silicon wafer into an acid etching solution to etch the surface of the silicon wafer, so as to increase the surface area of the silicon wafer;
adding a glass layer and a back film layer on the upper side and the lower side of the silicon wafer, and then placing the silicon wafer, the glass layer and the back film layer into a rectangular metal frame;
the manufacturing method of the cell also relates to a manufacturing device of the n-type polycrystalline silicon solar cell;
n type polycrystalline silicon solar cell makes device includes a rectangle section of thick bamboo, the filter plate, the flat strip, electric putter II, T shape pole, the rotary drum, motor I, friction wheel and protruding sword, fixedly connected with filter plate on the rectangle section of thick bamboo, the flat strip sets up the top at the rectangle section of thick bamboo, the front portion of flat strip is rotated and is connected with the rotary drum, vertical sliding connection has T shape pole on the rotary drum, electric putter II's upper end fixed connection is on the upper portion of T shape pole, electric putter II's lower extreme fixed connection is on the rotary drum, the anterior fixedly connected with motor I of flat strip, fixedly connected with friction wheel on motor I's the output shaft, friction wheel and rotary drum friction transmission, the lower part equipartition of T shape pole has a plurality.
N type polycrystalline silicon solar cell manufacturing installation still includes push pedal, side lever, spreader and translation piece, the equal fixedly connected with side lever in both ends about the push pedal, and both ends difference fixed connection is on the upper portion of two side levers about the spreader, and the lower part sliding connection of translation piece is on the spreader, and compression spring I has all been cup jointed at both ends about the spreader, and two compression spring I are located the left and right sides of translation piece respectively, and the rear end fixed connection of plain noodles is on the upper portion of translation piece.
The n-type polycrystalline silicon solar cell manufacturing device further comprises a motor II, a rear extension rod and a shifting lever, the rear side of the pushing plate is fixedly connected with the motor II, the rear side of the translation block is fixedly connected with the rear extension rod, the shifting lever is fixedly connected to an output shaft of the motor II, and the shifting lever extends once after being rotated for one circle.
N type polycrystalline silicon solar cell manufacturing installation still includes erects the hack lever, door-shaped pole, the spring pocket post, the rectangular hole, rectangle hole pole and minor axis, the left side fixedly connected with minor axis of a rectangle section of thick bamboo, the minor axis rotates the lower part of connecting at erects the hack lever, rectangle hole pole fixed connection is at the left end of minor axis, be provided with the rectangular hole on the rectangle hole pole, the right side fixedly connected with door-shaped pole of erectting the hack lever, fixedly connected with fore-and-aft direction's spring pocket post on the door-shaped pole, the spring pocket post passes the rectangular hole, two compression spring II have been cup jointed on the spring pocket post, two compression spring II are located the front and back.
N type polycrystalline silicon solar cell manufacturing installation still includes bottom plate, hollow pole, electric putter III, L shape frame and founds the seat, and fixedly connected with founds the seat on the bottom plate, and push pedal fixed connection is on the upper portion of founding the seat, and the hollow pole of the anterior fixedly connected with of bottom plate, vertical sliding connection have L shape frame on the hollow pole, and electric putter III's lower extreme fixed connection is on the bottom plate, and electric putter III's upper end fixed connection is on L shape frame, and the upper end fixed connection of erectting the hack lever is on the upper portion of L shape frame.
N type polycrystalline silicon solar cell manufacturing installation still includes rectangle box, arc, cover plate and trapezoidal strip, the trapezoidal strip of downside fixedly connected with of rectangle box, and sliding connection is on founding the seat about trapezoidal strip is about the orientation, the equal fixedly connected with cover plate in the left and right sides of rectangle box, the equal fixedly connected with arc in upper end of two cover plates.
The n-type polycrystalline silicon solar cell manufacturing device further comprises a lower extension rod and parallel columns, the lower side of the translation block is fixedly connected with the lower extension rod, the middle part of the rear side of the rectangular box is fixedly connected with the two parallel columns, and the lower extension rod is located between the two parallel columns.
N type polycrystalline silicon solar cell manufacturing installation still includes triangular prism, electric putter I, convex cylinder and perpendicular slide bar, a plurality of triangular prisms of fixedly connected with from a left side to the right side in the rear side of a rectangle section of thick bamboo, a plurality of triangular prisms's pointed end down, erect the vertical sliding connection of slide bar on the plain noodles, erect the lower extreme fixedly connected with convex cylinder of slide bar, convex cylinder is located a plurality of triangular prisms's downside, fixedly connected with electric putter I on the plain noodles, electric putter I's expansion end fixed connection is on the upper portion of erecting the slide bar.
A polycrystalline silicon solar cell manufactured by the manufacturing method of the n-type polycrystalline silicon solar cell is composed of a silicon wafer, a glass layer and a back film layer which are put in a rectangular metal frame.
The n-type polycrystalline silicon solar cell and the manufacturing method thereof have the beneficial effects that:
according to the n-type polycrystalline silicon solar cell and the manufacturing method thereof, multiple scratches can be scratched on a silicon wafer, and the surface of the silicon wafer can be conveniently etched by acidic etching liquid.
Drawings
The invention is described in further detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic diagram of the overall structure of an n-type polycrystalline silicon solar cell manufacturing device;
FIG. 2 is a schematic diagram of the overall structure of an n-type polycrystalline silicon solar cell manufacturing apparatus II;
FIG. 3 is a first schematic structural diagram of a rectangular cylinder;
FIG. 4 is a schematic structural view II of a rectangular cylinder;
FIG. 5 is a schematic view of a flat bar construction;
FIG. 6 is a first schematic structural diagram of a push plate;
FIG. 7 is a second schematic structural view of a push plate;
FIG. 8 is a schematic structural view of a base plate;
FIG. 9 is a first schematic structural view of a rectangular box;
fig. 10 is a second structural schematic diagram of the rectangular box.
In the figure: a rectangular cylinder 1; a filter plate 101; a mast bar 102; a gate-shaped rod 103; a spring pocket post 104; a rectangular hole 105; a rectangular hole bar 106; a short axis 107; a triangular prism 108; a flat bar 2; an electric push rod I201; an electric push rod II 202; a T-bar 203; a rotating drum 204; a motor I205; a friction wheel 206; a convex edge 207; a convex cylinder 208; a vertical slide bar 209; a push plate 3; a side lever 301; a cross-post 302; a motor II 303; a rear boom 304; a translation block 305; a deflector rod 306; a lower boom 307; a base plate 4; a hollow shaft 401; an electric push rod III 402; an L-shaped frame 403; a vertical base 404; a rectangular box 5; an arc plate 501; a cover plate 502; parallel columns 503; trapezoidal bars 504.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The technical scheme adopted by the invention to solve the technical problem is as follows:
the first embodiment is as follows:
in the following, the present embodiment will be described with reference to fig. 1 to 10, and a method for manufacturing an n-type polycrystalline silicon solar cell includes the steps of:
firstly, scribing a plurality of scratches on a silicon wafer;
secondly, placing the silicon wafer into an acid etching solution to etch the surface of the silicon wafer, so as to increase the surface area of the silicon wafer;
adding a glass layer and a back film layer on the upper side and the lower side of the silicon wafer, and then placing the silicon wafer, the glass layer and the back film layer into a rectangular metal frame;
the manufacturing method of the cell also relates to a manufacturing device of the n-type polycrystalline silicon solar cell;
the n-type polycrystalline silicon solar cell manufacturing device comprises a rectangular cylinder 1, a filter plate 101, a flat bar 2, an electric push rod II202, a T-shaped rod 203, a rotary drum 204, a motor I205, a friction wheel 206 and convex edges 207, wherein the rectangular cylinder 1 is fixedly connected with the filter plate 101, the flat bar 2 is arranged above the rectangular cylinder 1, the front part of the flat bar 2 is rotatably connected with the rotary drum 204, the rotary drum 204 is vertically and slidably connected with the T-shaped rod 203, the upper end of the electric push rod II202 is fixedly connected to the upper part of the T-shaped rod 203, the lower end of the electric push rod II202 is fixedly connected to the rotary drum 204, the front part of the flat bar 2 is fixedly connected with the motor I205, the friction wheel 206 is fixedly connected to an output shaft of the motor I205, the friction wheel 206 is in friction transmission with the rotary drum 204. When in use, the silicon chip is placed on the filter plate 101 in the rectangular cylinder 1, the T-shaped rod 203 can be driven to vertically slide on the rotary cylinder 204 when the electric push rod II202 stretches, further adjusting the heights of the plurality of convex edges 207, when the motor I205 drives the friction wheel 206 to rotate, the motor I can drive the rotating drum 204 to rotate by taking the axis of the motor I as the axis, thereby driving the plurality of convex edges 207 to rotate around the axis of the rotary drum 204, contacting the plurality of convex edges 207 with the upper side of the silicon wafer, adjusting the plurality of convex edges 207 to be arranged in a front-back straight line, then, the plurality of convex edges 207 are moved left and right to scribe a plurality of transverse scratches, and then the plurality of convex edges 207 can be driven to rotate around the axis of the drum 204, thereby scribing a circular scratch, then when the silicon wafer is immersed in the acidic etching solution, the acidic etching solution is convenient to contact with the silicon wafer, irregular depressions are quickly formed on the silicon wafer, the surface area of the silicon wafer is increased, and the silicon wafer can absorb sunlight conveniently.
The second embodiment is as follows:
the present embodiment is described below with reference to fig. 1 to 10, the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a push plate 3, side bars 301, a cross column 302 and a translation block 305, the side bars 301 are fixedly connected to both left and right ends of the push plate 3, the left and right ends of the cross column 302 are respectively fixedly connected to upper portions of the two side bars 301, a lower portion of the translation block 305 is slidably connected to the cross column 302, compression springs I are respectively sleeved to both left and right ends of the cross column 302, the two compression springs I are respectively located on both left and right sides of the translation block 305, and a rear end of the flat bar 2 is fixedly connected to an upper portion of the translation block 305. Translation piece 305 can move about on spreader 302, and two compression spring I can carry out the return to translation piece 305, and then stir translation piece 305 when sliding to one side, translation piece 305 can carry out the return, and then makes translation piece 305 move about, and then draws multichannel mar on the silicon chip.
The third concrete implementation mode:
the embodiment is described below with reference to fig. 1 to 10, the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a motor II303, a rear extension rod 304, and a shift lever 306, the rear side of the pushing plate 3 is fixedly connected with the motor II303, the rear side of the translation block 305 is fixedly connected with the rear extension rod 304, the output shaft of the motor II303 is fixedly connected with the shift lever 306, and the shift lever 306 shifts the rear extension rod 304 once every turn. The motor II303 can drive the shifting lever 306 to rotate when rotating, the shifting lever 306 rotates a circle to shift the rear extension rod 304 once, and then the translation block 305 is driven to move left and right once, so that the translation block 305 moves left and right, and then a plurality of scratches are scribed on the silicon wafer.
The fourth concrete implementation mode:
the present embodiment is described below with reference to fig. 1 to 10, the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a vertical rod 102, a door-shaped rod 103, a spring sleeve column 104, a rectangular hole 105, a rectangular hole rod 106, and a short shaft 107, the short shaft 107 is fixedly connected to the left side of the rectangular tube 1, the short shaft 107 is rotatably connected to the lower portion of the vertical rod 102, the rectangular hole rod 106 is fixedly connected to the left end of the short shaft 107, the rectangular hole rod 106 is provided with the rectangular hole 105, the right side of the vertical rod 102 is fixedly connected with the door-shaped rod 103, the door-shaped rod 103 is fixedly connected with the spring sleeve column 104 in the front-rear direction, the spring sleeve column 104 passes through the rectangular hole 105, the spring sleeve column 104 is sleeved with two compression springs II, and the two compression springs II are respectively located at. Rectangular cylinder 1 can rotate in the lower part of erecting pole 102 through minor axis 107, and then rectangular hole pole 106 can rotate relative spring sleeve post 104 at this moment, and then can press one of them compression spring II, two compression spring II can return rectangular hole pole 106, can drive the silicon chip swing back and forth in the rectangular cylinder 1 when stirring rectangular cylinder 1 swing back and forth, be convenient for after the etching finishes with the silicon chip quick swing back and forth, throw away the etching solution, the air-drying of silicon chip has also been accelerated.
The fifth concrete implementation mode:
the present embodiment is described below with reference to fig. 1 to 10, where the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a bottom plate 4, a hollow rod 401, an electric push rod III402, an L-shaped frame 403, and a vertical base 404, where the bottom plate 4 is fixedly connected with the vertical base 404, the push plate 3 is fixedly connected to the upper portion of the vertical base 404, the front portion of the bottom plate 4 is fixedly connected with the hollow rod 401, the hollow rod 401 is vertically connected to the L-shaped frame 403 in a sliding manner, the lower end of the electric push rod III402 is fixedly connected to the bottom plate 4, the upper end of the electric push rod III402 is fixedly connected to the L-shaped frame 403, and the upper end of the vertical frame rod 102. Electric putter III402 can drive L shape frame 403 vertical slip on hollow rod 401 when flexible, and then drives erector pole 102 and reciprocate, and then drives a rectangular cylinder 1 and goes up and down, is convenient for rectangular cylinder 1 to insert in the etching solution or lift up from the etching solution.
The sixth specific implementation mode:
the present embodiment is described below with reference to fig. 1 to 10, the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a rectangular box 5, an arc plate 501, a cover plate 502, and a trapezoidal bar 504, the trapezoidal bar 504 is fixedly connected to the lower side of the rectangular box 5, the trapezoidal bar 504 is connected to the vertical base 404 in the left-right direction in a sliding manner, the cover plates 502 are fixedly connected to the left and right sides of the rectangular box 5, and the arc plates 501 are fixedly connected to the upper ends of the two cover plates 502. The rectangular box 5 is used for placing etching liquid, after scratches on the silicon wafer are finished, the rectangular cylinder 1 is lowered, and the silicon wafer is immersed into the etching liquid in the rectangular box 5 to be etched.
The seventh embodiment:
the present embodiment is described below with reference to fig. 1 to 10, the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a lower stretching rod 307 and two parallel columns 503, the lower stretching rod 307 is fixedly connected to the lower side of the translation block 305, the two parallel columns 503 are fixedly connected to the middle portion of the rear side of the rectangular box 5, and the lower stretching rod 307 is located between the two parallel columns 503. When the shifting rod 306 drives the translation block 305 to move left and right, the lower extension rod 307 is driven to move left and right, the lower extension rod 307 moves left and right between the two parallel columns 503 to drive the two parallel columns 503 to move left and right, and further drive the rectangular box 5 to slide left and right on the vertical seat 404 through the trapezoid bar 504, so that the liquid level of the etching liquid in the rectangular box 5 continuously flows obliquely left and right, the etching liquid is impacted on the silicon wafer and flows on the silicon wafer, and the etching liquid can etch scratches on the silicon wafer quickly.
The specific implementation mode is eight:
the present embodiment is described below with reference to fig. 1 to 10, the n-type polycrystalline silicon solar cell manufacturing apparatus further includes a triangular prism 108, an electric putter I201, a convex cylinder 208, and a vertical slide bar 209, a plurality of triangular prisms 108 are fixedly connected to the rear side of the rectangular cylinder 1 from left to right, tips of the plurality of triangular prisms 108 face downward, the vertical slide bar 209 is vertically slidably connected to the flat bar 2, the lower end of the vertical slide bar 209 is fixedly connected to the convex cylinder 208, the convex cylinder 208 is located at the lower side of the plurality of triangular prisms 108, the flat bar 2 is fixedly connected to the electric putter I201, and an active end of the electric putter I201 is fixedly connected to the upper portion of the vertical slide bar 209. After the etching finishes, with rectangular cylinder 1 and silicon chip after rising, electric putter I201 drives convex cylinder 208 and removes the downside to a plurality of triangular prism 108, when driving lever 306 drives translation piece 305 and removes, still can drive convex cylinder 208 and remove, the downside at a plurality of triangular prism 108 passes through when removing about convex cylinder 208, and then when driving rectangular cylinder 1 swing back and forth, make the silicon chip swing back and forth in the rectangular cylinder 1, be convenient for with the silicon chip swing back and forth fast after the etching finishes, throw away the etching solution, the air-drying of silicon chip has also been accelerated.
A polycrystalline silicon solar cell manufactured by the manufacturing method of the n-type polycrystalline silicon solar cell is composed of a silicon wafer, a glass layer and a back film layer which are put in a rectangular metal frame.
The working principle of the invention is as follows: when in use, the silicon chip is placed on the filter plate 101 in the rectangular cylinder 1, the T-shaped rod 203 can be driven to vertically slide on the rotary cylinder 204 when the electric push rod II202 stretches, further adjusting the heights of the plurality of convex edges 207, when the motor I205 drives the friction wheel 206 to rotate, the motor I can drive the rotating drum 204 to rotate by taking the axis of the motor I as the axis, thereby driving the plurality of convex edges 207 to rotate around the axis of the rotary drum 204, contacting the plurality of convex edges 207 with the upper side of the silicon wafer, adjusting the plurality of convex edges 207 to be arranged in a front-back straight line, then, the plurality of convex edges 207 are moved left and right to scribe a plurality of transverse scratches, and then the plurality of convex edges 207 can be driven to rotate around the axis of the drum 204, thereby scribing a circular scratch, then when the silicon wafer is immersed in the acidic etching solution, the acidic etching solution is convenient to contact with the silicon wafer, irregular depressions are quickly formed on the silicon wafer, the surface area of the silicon wafer is increased, and the silicon wafer can absorb sunlight conveniently. Translation piece 305 can move about on spreader 302, and two compression spring I can carry out the return to translation piece 305, and then stir translation piece 305 when sliding to one side, translation piece 305 can carry out the return, and then makes translation piece 305 move about, and then draws multichannel mar on the silicon chip. The motor II303 can drive the shifting lever 306 to rotate when rotating, the shifting lever 306 rotates a circle to shift the rear extension rod 304 once, and then the translation block 305 is driven to move left and right once, so that the translation block 305 moves left and right, and then a plurality of scratches are scribed on the silicon wafer. Rectangular cylinder 1 can rotate in the lower part of erecting pole 102 through minor axis 107, and then rectangular hole pole 106 can rotate relative spring sleeve post 104 at this moment, and then can press one of them compression spring II, two compression spring II can return rectangular hole pole 106, can drive the silicon chip swing back and forth in the rectangular cylinder 1 when stirring rectangular cylinder 1 swing back and forth, be convenient for after the etching finishes with the silicon chip quick swing back and forth, throw away the etching solution, the air-drying of silicon chip has also been accelerated. The rectangular box 5 is used for placing etching liquid, after scratches on the silicon wafer are finished, the rectangular cylinder 1 is lowered, and the silicon wafer is immersed into the etching liquid in the rectangular box 5 to be etched. When the shifting rod 306 drives the translation block 305 to move left and right, the lower extension rod 307 is driven to move left and right, the lower extension rod 307 moves left and right between the two parallel columns 503 to drive the two parallel columns 503 to move left and right, and further drive the rectangular box 5 to slide left and right on the vertical seat 404 through the trapezoid bar 504, so that the liquid level of the etching liquid in the rectangular box 5 continuously flows obliquely left and right, the etching liquid is impacted on the silicon wafer and flows on the silicon wafer, and the etching liquid can etch scratches on the silicon wafer quickly. After the etching finishes, with rectangular cylinder 1 and silicon chip after rising, electric putter I201 drives convex cylinder 208 and removes the downside to a plurality of triangular prism 108, when driving lever 306 drives translation piece 305 and removes, still can drive convex cylinder 208 and remove, the downside at a plurality of triangular prism 108 passes through when removing about convex cylinder 208, and then when driving rectangular cylinder 1 swing back and forth, make the silicon chip swing back and forth in the rectangular cylinder 1, be convenient for with the silicon chip swing back and forth fast after the etching finishes, throw away the etching solution, the air-drying of silicon chip has also been accelerated.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and that various changes, modifications, additions and substitutions which are within the spirit and scope of the present invention and which may be made by those skilled in the art are also within the scope of the present invention.
Claims (9)
1. A manufacturing method of an n-type polycrystalline silicon solar cell is characterized by comprising the following steps: the method comprises the following steps:
firstly, scribing a plurality of scratches on a silicon wafer;
secondly, placing the silicon wafer into an acid etching solution to etch the surface of the silicon wafer, so as to increase the surface area of the silicon wafer;
adding a glass layer and a back film layer on the upper side and the lower side of the silicon wafer, and then placing the silicon wafer, the glass layer and the back film layer into a rectangular metal frame;
the manufacturing method of the cell also relates to a manufacturing device of the n-type polycrystalline silicon solar cell;
the n-type polycrystalline silicon solar cell manufacturing device comprises a rectangular cylinder (1), a filter plate (101), a flat bar (2), an electric push rod II (202), a T-shaped rod (203), a rotary cylinder (204), a motor I (205), a friction wheel (206) and a convex edge (207), wherein the rectangular cylinder (1) is fixedly connected with the filter plate (101), the flat bar (2) is arranged above the rectangular cylinder (1), the front part of the flat bar (2) is rotatably connected with the rotary cylinder (204), the rotary cylinder (204) is vertically and slidably connected with the T-shaped rod (203), the upper end of the electric push rod II (202) is fixedly connected to the upper part of the T-shaped rod (203), the lower end of the electric push rod II (202) is fixedly connected to the rotary cylinder (204), the front part of the flat bar (2) is fixedly connected with the motor I (205), the friction wheel (206) is fixedly connected to an output shaft of the motor I (205), and the friction wheel (, a plurality of convex blades (207) are uniformly distributed at the lower part of the T-shaped rod (203).
2. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 1, wherein: n type polycrystalline silicon solar cell manufacturing installation still includes push pedal (3), side lever (301), spreader (302) and translation piece (305), equal fixedly connected with side lever (301) in both ends about push pedal (3), both ends difference fixed connection is on the upper portion of two side levers (301) about spreader (302), the lower part sliding connection of translation piece (305) is on spreader (302), compression spring I has all been cup jointed at both ends about spreader (302), two compression spring I are located the left and right sides of translation piece (305) respectively, the rear end fixed connection of ribbon (2) is on the upper portion of translation piece (305).
3. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 2, wherein: the n-type polycrystalline silicon solar cell manufacturing device further comprises a motor II (303), a rear extension rod (304) and a shifting rod (306), the rear side of the push plate (3) is fixedly connected with the motor II (303), the rear side of the translation block (305) is fixedly connected with the rear extension rod (304), the shifting rod (306) is fixedly connected to an output shaft of the motor II (303), and the shifting rod (306) is rotated for one circle and is shifted and then extended for one time, wherein the shifting rod (304) is arranged on the output shaft of the motor II (303).
4. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 3, wherein: the n-type polycrystalline silicon solar cell manufacturing device further comprises a vertical frame rod (102), a door-shaped rod (103), a spring sleeve column (104), a rectangular hole (105), a rectangular hole rod (106) and a short shaft (107), the left side of the rectangular cylinder (1) is fixedly connected with the short shaft (107), the short shaft (107) is rotatably connected to the lower portion of the vertical frame rod (102), the rectangular hole rod (106) is fixedly connected to the left end of the short shaft (107), the rectangular hole rod (106) is provided with the rectangular hole (105), the right side of the vertical frame rod (102) is fixedly connected with the door-shaped rod (103), the door-shaped rod (103) is fixedly connected with the spring sleeve column (104) in the front-back direction, the spring sleeve column (104) penetrates through the rectangular hole (105), the spring sleeve column (104) is sleeved with two compression springs II, and the two compression springs II are respectively located on the front side and the.
5. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 4, wherein: the n-type polycrystalline silicon solar cell manufacturing device further comprises a bottom plate (4), a hollow rod (401), an electric push rod III (402), an L-shaped frame (403) and a vertical seat (404), wherein the vertical seat (404) is fixedly connected to the bottom plate (4), a push plate (3) is fixedly connected to the upper portion of the vertical seat (404), the hollow rod (401) is fixedly connected to the front portion of the bottom plate (4), the L-shaped frame (403) is vertically and slidably connected to the hollow rod (401), the lower end of the electric push rod III (402) is fixedly connected to the bottom plate (4), the upper end of the electric push rod III (402) is fixedly connected to the L-shaped frame (403), and the upper end of the vertical frame rod (102) is fixedly connected to the upper portion of the L-shaped.
6. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 5, wherein: n type polycrystalline silicon solar cell manufacturing installation still includes rectangular box (5), arc (501), cover plate (502) and trapezoidal strip (504), and the trapezoidal strip (504) of downside fixedly connected with of rectangular box (5), sliding connection is on founding seat (404) about trapezoidal strip (504) orientation, the equal fixedly connected with cover plate (502) in the left and right sides of rectangular box (5), the equal fixedly connected with arc (501) in upper end of two cover plates (502).
7. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 6, wherein: the manufacturing device of the n-type polycrystalline silicon solar cell further comprises a lower extension rod (307) and parallel columns (503), the lower side of the translation block (305) is fixedly connected with the lower extension rod (307), the middle part of the rear side of the rectangular box (5) is fixedly connected with the two parallel columns (503), and the lower extension rod (307) is located between the two parallel columns (503).
8. The method for manufacturing an n-type polycrystalline silicon solar cell according to claim 7, wherein: n type polycrystalline silicon solar cell manufacturing installation still includes triangular prism (108), electric putter I (201), convex cylinder (208) and perpendicular slide bar (209), the rear side of rectangular cylinder (1) is from a left side to a plurality of triangular prisms (108) of right fixedly connected with, the pointed end of a plurality of triangular prisms (108) is down, the vertical sliding connection of perpendicular slide bar (209) is on plain noodles (2), the lower extreme fixedly connected with convex cylinder (208) of perpendicular slide bar (209), convex cylinder (208) are located the downside of a plurality of triangular prisms (108), fixedly connected with electric putter I (201) is gone up in plain noodles (2), the expansion end fixed connection of electric putter I (201) is on the upper portion of perpendicular slide bar (209).
9. The polycrystalline silicon solar cell manufactured by the n-type polycrystalline silicon solar cell manufacturing method of claim 8, wherein: the polycrystalline silicon solar cell is formed by putting a silicon wafer, a glass layer and a back film layer into a rectangular metal frame.
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Application publication date: 20201113 |