CN111933602A - Aluminum-silicon bonding process for removing film - Google Patents
Aluminum-silicon bonding process for removing film Download PDFInfo
- Publication number
- CN111933602A CN111933602A CN201910800765.6A CN201910800765A CN111933602A CN 111933602 A CN111933602 A CN 111933602A CN 201910800765 A CN201910800765 A CN 201910800765A CN 111933602 A CN111933602 A CN 111933602A
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- Prior art keywords
- welding
- aluminum
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- wafer
- bonding process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a membrane-removing aluminum-silicon bonding process, which belongs to the field of wafer welding and comprises the steps of putting a product to be packaged after being pasted into a plasma cleaning machine to clean and remove oxidation and foreign matters, putting the product to be welded into a machine filled with nitrogen-hydrogen mixed inert gas to protect, fixing the product in the machine by using a carrier, editing a program according to the position of a welding line, and finally welding an aluminum wire and a silicon wafer by adjusting ultrasonic and pressure parameters. The high-temperature welding which is necessary to be used in gold wire welding is removed, the influence limitation on a high-temperature sensitive PCB or a component is reduced, an aluminum wire and a silicon wafer are directly used for bonding, the aluminum plating process is omitted, a plurality of subsequent processes can be reduced, the cost is reduced, the reliability is improved, the subsequent processing in wafer production is realized, and the corresponding welding packaging and electrical testability test can be completed only by using an original silicon wafer.
Description
Technical Field
The invention relates to a membrane removing aluminum-silicon bonding process.
Background
Gold wires are often used in semiconductor bonding processes to bond on aluminum-plated silicon wafers, and gold has oxidation and corrosion resistance and high conductivity, and can be easily bonded to a designated position by a thermal compression method and an ultrasonic welding technology, but gold wires are expensive, which results in high packaging cost. For some temperature-sensitive PCBs or components, gold wire bonding will not meet the requirements for producing packages.
Disclosure of Invention
The invention aims to provide a membrane-removing aluminum-silicon bonding process.
The technical scheme adopted by the invention for solving the technical problems is as follows: a membrane-removing aluminum-silicon bonding process comprises the following steps:
the method comprises the following steps: putting the product to be packaged after being pasted into a plasma cleaning machine for cleaning so as to remove an oxide layer or foreign matters and the like on the product;
step two: putting the product into an ultrasonic welding machine filled with mixed inert gas to prevent the aluminum wire and the product from being oxidized in the package;
step three: fixing the product in an ultrasonic welding machine by using a carrier, and editing a program according to the position of a welding line;
step four: the aluminum wire and the wafer silicon chip are welded by adjusting the ultrasonic and pressure parameters of the ultrasonic welding machine, the aluminum wire and the silicon chip are directly bonded, high-temperature welding which is necessary to be used in gold wire welding is removed, the influence limitation on a high-temperature sensitive PCB or a component is reduced, the aluminizing process is omitted, a plurality of subsequent processes can be reduced, the cost is reduced, the reliability is improved, the subsequent processing in wafer production is realized, and the corresponding welding packaging and electrical testability test can be completed only by the original silicon chip.
Further, the method comprises the following steps: and the inert mixed gas in the second step is nitrogen-hydrogen mixed gas.
Further, the method comprises the following steps: in the fourth step, the power of ultrasonic welding the wafer and the aluminum wire is 70-90lvl, the welding time is 15-25ms, and the welding pressure is 15-25 gf.
Detailed Description
The present invention will be further described with reference to the following embodiments.
A membrane-removing aluminum-silicon bonding process comprises the following steps:
the method comprises the following steps: the product to be packaged after being pasted is put into a plasma cleaning machine to be cleaned so as to remove an oxide layer or foreign matters and the like on the product, the quality of the lead key platform of the integrated circuit has a decisive influence on the reliability of the microelectronic device, a bonding area must be free of pollutants and have good bonding characteristics, and the existence of the pollutants, such as chloride, organic residues and the like, can seriously weaken the tension value of the lead key platform. The traditional wet cleaning method can not completely or completely remove the pollutants in the bonding area, and Plasma cleaning can effectively remove the pollutants on the surface and activate the surface, so that the bonding tension of a lead can be obviously improved, the reliability of a packaging device is greatly improved, and an Alpha Plasma microwave Plasma cleaning machine is selected in practical use;
step two: putting the product into an ultrasonic welding machine filled with mixed inert gas to prevent the aluminum wire and the product from being oxidized in the package;
step three: fixing a product in an ultrasonic welding machine by using a carrier, editing a program according to the position of a welding line, and directly inputting corresponding data in a KP3508 ultrasonic welding machine in actual use;
step four: and adjusting the ultrasonic and pressure parameters of the ultrasonic welding machine to weld the aluminum wire and the wafer silicon chip so as to bond the aluminum wire and the silicon chip. Under the action of pressure and vibration, the surfaces of the metals to be welded rub against each other, the oxide film is damaged, and plastic deformation occurs, so that the pure aluminum wire to be welded is tightly contacted with the silicon wafer, the atomic distance combination is achieved, and finally, firm mechanical connection is formed. Gold wires are needed in the traditional bonding, and an aluminum layer is generally needed to be plated on the area needing bonding; the existing process is to replace gold wires with aluminum wires and directly use the aluminum wires to bond with silicon wafers, the high-purity aluminum wires are good in conductivity and excellent in corrosion resistance, compared with the gold wires, the process is low in cost, the aluminum wires are directly used to bond with the silicon wafers, high-temperature welding which is necessary to be used in gold wire welding is removed, the influence limitation on high-temperature sensitive PCBs or components is reduced, the aluminum plating process is omitted, a plurality of subsequent processes can be reduced, the cost is reduced, the reliability is improved, the subsequent processing in wafer production is realized, and the corresponding welding packaging and electrical testability can be completed only by using the original silicon wafers.
On the basis of the above steps: and the inert mixed gas in the second step is nitrogen-hydrogen mixed gas.
On the basis of the above steps: in the fourth step, the power of ultrasonic welding the wafer and the aluminum wire is 70-90lvl, the welding time is 15-25ms, and the welding pressure is 15-25 gf.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (3)
1. A membrane-removing aluminum-silicon bonding process is characterized by comprising the following steps:
the method comprises the following steps: putting the product to be packaged after the surface mounting into a plasma cleaning machine for cleaning;
step two: putting the product into an ultrasonic welding machine filled with inert gas;
step three: fixing the product in an ultrasonic welding machine by using a carrier, and editing a program according to the position of a welding line;
step four: and adjusting the ultrasonic and pressure parameters of the ultrasonic welding machine to weld the aluminum wire and the silicon wafer.
2. The de-filmed aluminum silicon bonding process according to claim 1, wherein: and the inert mixed gas in the second step is nitrogen-hydrogen mixed gas.
3. The de-filmed aluminum silicon bonding process according to claim 1, wherein: in the fourth step, the power of ultrasonic welding the wafer and the aluminum wire is 70-90lvl, the welding time is 15-25ms, and the welding pressure is 15-25 gf.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910800765.6A CN111933602A (en) | 2019-08-28 | 2019-08-28 | Aluminum-silicon bonding process for removing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910800765.6A CN111933602A (en) | 2019-08-28 | 2019-08-28 | Aluminum-silicon bonding process for removing film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111933602A true CN111933602A (en) | 2020-11-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910800765.6A Pending CN111933602A (en) | 2019-08-28 | 2019-08-28 | Aluminum-silicon bonding process for removing film |
Country Status (1)
| Country | Link |
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| CN (1) | CN111933602A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6858943B1 (en) * | 2003-03-25 | 2005-02-22 | Sandia Corporation | Release resistant electrical interconnections for MEMS devices |
| CN101002314A (en) * | 2004-08-31 | 2007-07-18 | 松下电器产业株式会社 | Micromachine device |
| CN101022098A (en) * | 2006-02-15 | 2007-08-22 | 松下电器产业株式会社 | Connection structure and method for fabricating the same |
| CN101473707A (en) * | 2006-06-22 | 2009-07-01 | 松下电器产业株式会社 | Electrode bonding method and part mounting apparatus |
| CN101897012A (en) * | 2007-12-07 | 2010-11-24 | 株式会社新川 | Bonding apparatus and bonding method |
-
2019
- 2019-08-28 CN CN201910800765.6A patent/CN111933602A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6858943B1 (en) * | 2003-03-25 | 2005-02-22 | Sandia Corporation | Release resistant electrical interconnections for MEMS devices |
| CN101002314A (en) * | 2004-08-31 | 2007-07-18 | 松下电器产业株式会社 | Micromachine device |
| CN101022098A (en) * | 2006-02-15 | 2007-08-22 | 松下电器产业株式会社 | Connection structure and method for fabricating the same |
| CN101473707A (en) * | 2006-06-22 | 2009-07-01 | 松下电器产业株式会社 | Electrode bonding method and part mounting apparatus |
| CN101897012A (en) * | 2007-12-07 | 2010-11-24 | 株式会社新川 | Bonding apparatus and bonding method |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20201113 |