CN111930166A - Control circuit, linear compensation method and solid-state photomultiplier module - Google Patents
Control circuit, linear compensation method and solid-state photomultiplier module Download PDFInfo
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Abstract
The embodiment of the invention provides a control circuit, a linear compensation method and a solid-state photomultiplier module. The control circuit comprises an adjustable high-voltage power supply circuit used for driving the solid photomultiplier and a front-end analog circuit used for second-order linear compensation. The adjustable high-voltage power supply circuit comprises a preceding-stage negative high-voltage switch conversion circuit and a succeeding-stage linear voltage stabilizing circuit; the preceding-stage negative high-voltage switch conversion circuit comprises a low-voltage power supply, a switch booster circuit and a negative high-voltage conversion circuit; the post-stage linear voltage stabilizing circuit is realized by adopting a high-voltage operational amplifier and is used for stabilizing the output of the pre-stage negative high-voltage switch conversion circuit. The linear compensation method comprises the following steps: and performing second-order polynomial fitting on the response curve of the nonlinear area, calculating parameters of a second-order linear compensation circuit according to the parameters of the second-order polynomial, and then performing parameter setting on the second-order linear compensation circuit. The solid-state photomultiplier module comprises a control circuit, an optical receiving lens and a solid-state photomultiplier.
Description
Technical Field
The embodiment of the invention relates to the field of single photon detection, in particular to a control circuit of a solid state photomultiplier (SiPM), a linear compensation method of the control circuit and a solid state photomultiplier module.
Background
Conventional sensors for single photon imaging and fluorescence detection typically employ a glass vacuum-sealed photomultiplier tube (PMT). The photoelectric gain of 10 to the power of 6 can be realized by the high-voltage electric field drive of about 1000V. However, the glass vacuum packaging and the high voltage over kilovolt cause the problems of complex structure, large miniaturization difficulty, sensitive magnetic field and the like when the tube is used. The solid-state photomultiplier (SiPM) adopts a semiconductor process, is composed of an Avalanche Photo Diode (APD) array working in a Geiger mode, can realize photoelectric gain of 10 th order and large-area optical signal detection, has flexible use environment and structure, is convenient to integrate, can overcome the defects of the PMT, can work only by bias voltage of dozens of volts, and is good supplement and replacement for the PMT in the field of single photon imaging and fluorescence detection.
Solid state photomultipliers (sipms) need to be loaded with a bias voltage of tens of volts to allow APD cells inside the detector to operate in a geiger mode, resulting in high gain. The operating voltage in the geiger mode is a further increase in the voltage at the avalanche point of the APD cells of about 2 to 5 volts, this further increase being referred to as the overvoltage value. The electron avalanche gain is controlled by the overvoltage value and presents a linear control relation. The noise of the high-voltage power supply not only affects the avalanche gain of the detector and brings signal noise, but also interferes the detection signal circuit, so that the signal-to-noise ratio of the detection circuit is reduced. A high voltage power supply providing high stability and low noise to the SiPM is required to fully develop the characteristics of the SiPM.
A solid-state photomultiplier (SiPM) is composed of an APD cell array, once photons are captured by internal cells, high-gain current pulses are formed by an avalanche effect, and ignition is carried out, so that a period of recovery time needs to be waitedt p New photons can be captured for secondary ignition, the number of APD unit arrays is limited, and when all the units are ignited, the upper limit of light energy detection of the detector is reached, namely the sensor reaches a saturation state. Therefore, as the number of detected photons increases, the output of the detector exhibits nonlinearity, leading to the problem of a narrow linear operating region of the solid state photomultiplier (SiPM).
The sensor is realized by adopting a solid photomultiplier (SiPM), photons of the sensor are captured in a depletion layer in a PN node of a diode, low-energy electrons in the depletion layer capture the photons, the transition is free electrons, and the photomultiplier is formed through an avalanche effect in a Geiger mode. However, due to the characteristics of semiconductors, there is a transition of free electrons even in a dark environment without photon irradiation, and dark count noise is formed by multiplication; meanwhile, in the electron multiplication process of the optical signal in the Geiger mode, the randomness of electron collision can also form shot noise and crosstalk noise of pixels. Temperature is an important influence factor of solid-state photomultiplier (SiPM) dark count noise, and the lower the temperature is, the more stable the depletion layer in the PN junction is, and the lower the dark count noise is generated. The lower the temperature at which the detector is operated, the lower the dark count noise. However, the shot noise of the SiPM in the process of responding to the optical signal is generated from the process of avalanche collision, and the more stable the electron state in the depletion layer is, the more monotonous the directionality of avalanche collision is, and instead, the gain difference in each avalanche process is enhanced, and the shot noise becomes larger. Thus, a lower temperature will make the electronic state more stable and the shot noise becomes larger. In addition, in pursuit of lower operating temperature, the more cooling power consumption the device is required to provide, and the interference of power supply noise is increased.
Disclosure of Invention
However, in the technical scheme of the existing detector, the high-voltage power supply voltage of the solid-state photomultiplier is not stable enough and has high noise, the linear working area of the solid-state photomultiplier (SiPM) is narrow, and a contradiction exists between dark count noise and shot noise.
Therefore, there is a need for an improved power module of a solid-state photomultiplier and a control method thereof, so that the power voltage of the solid-state photomultiplier is stable and has low noise, the linear working area is widened, and a good balance point between the working temperature and the shot noise is achieved.
In this context, embodiments of the present invention are directed to a control circuit, a linearity compensation method and a solid-state photomultiplier module.
In a first aspect of embodiments of the present invention, there is provided a control circuit comprising:
the adjustable high-voltage power supply circuit is used for driving the solid photomultiplier and comprises a preceding-stage negative high-voltage switch conversion circuit and a succeeding-stage linear voltage stabilizing circuit; the preceding-stage negative high-voltage switch conversion circuit comprises a low-voltage power supply, a switch booster circuit and a negative high-voltage conversion circuit; the switch booster circuit is connected with the low-voltage power supply and is used for performing voltage conversion on the output voltage of the low-voltage power supply so as to output positive high voltage; the negative high-voltage conversion circuit is connected with the switch boosting circuit and is used for performing voltage conversion on the positive high voltage output by the switch boosting circuit so as to output a switch negative high voltage; the rear-stage linear voltage stabilizing circuit is realized by adopting a high-voltage operational amplifier and is used for stabilizing the output of the front-stage negative high-voltage switch conversion circuit; and
and the front-end analog circuit is realized by adopting a second-order linear compensation circuit and is used for filtering the response signal of the solid photomultiplier and compensating the response of the nonlinear area of the solid photomultiplier so as to convert the signal of the nonlinear area into a linear response signal and output the linear response signal.
In another embodiment of the present invention, the switching boost circuit includes a first inductor L1, a first switch SW1, and a first capacitor C1;
one end of the first inductor L1 is connected to the positive output end of the low-voltage power supply, the other end of the first inductor L1 is connected to one end of a first switch SW1 and one end of a first capacitor C1, the other end of the first switch SW1 is connected to the power ground, and the other end of the first capacitor C1 is used as the output end of the switching boost circuit.
In still another embodiment of the present invention, the negative high voltage conversion circuit includes a first diode D1, a second inductor L2, and a second capacitor C2;
the anode of the first diode D1 is connected with one end of the second inductor L2, and the connection point is used as the input end of the negative high-voltage transformation circuit; the other end of the second inductor L2 is connected with one end of the second capacitor C2, and the connection point is used as the output end of the negative high-voltage conversion circuit; the other end of the second capacitor C2 and the cathode of the first diode D1 are both connected to the power ground.
In another embodiment of the present invention, the post-stage linear voltage regulator circuit includes:
a low noise reference circuit for outputting a reference voltage signal;
the digital-to-analog converter circuit is connected with the low-noise reference circuit and is used for converting the digital signals output by the low-noise reference circuit into analog signals; and
and the high-voltage operational amplifier circuit is connected with the digital-to-analog converter circuit and the negative high-voltage conversion circuit, and is used for amplifying the output voltage of the negative high-voltage conversion circuit by taking the output voltage of the digital-to-analog converter circuit as a reference signal, and the output end of the high-voltage operational amplifier circuit is used as the output end of the post-stage linear voltage stabilizing circuit.
In yet another embodiment of the present invention, the low noise reference circuit is implemented using a zener diode.
In yet another embodiment of the present invention, the low noise reference circuit is implemented using a low noise reference voltage chip.
In yet another embodiment of the present invention, the front-end analog circuit includes:
the front-end filtering following circuit is used for carrying out secondary filtering and voltage following on the output signals of the solid photomultiplier;
the voltage comparison circuit is connected with the front-end filter follower circuit and used for judging whether the output signal of the solid-state photomultiplier is in a linear region or a nonlinear region and outputting a switching signal according to a judgment result;
the second-order linear compensation circuit is connected with the front-end filter follower circuit and is used for performing linear compensation on the output signal of the solid photomultiplier in a nonlinear area; and
and the analog switch switching circuit is connected with the voltage comparison circuit, the front end filter following circuit and the second-order linear compensation circuit and is used for outputting an output signal of the front end filter following circuit or outputting an output signal of the second-order linear compensation circuit according to the switching signal.
In a further embodiment of the present invention, the front-end filter follower circuit is implemented by using an operational amplifier, a non-inverting input terminal of the operational amplifier is connected to a capacitor, and a resistor is connected in series between the non-inverting input terminal of the operational amplifier and a signal input terminal of the front-end filter follower circuit to implement voltage following.
In yet another embodiment of the present invention, the voltage comparison circuit is implemented using an operational amplifier.
In still another embodiment of the present invention, the second order linear compensation circuit includes:
a bias voltage source for providing a bias voltage;
the two input signal attenuation circuits which are connected in parallel and have different attenuation coefficients are connected with the front-end filter follower circuit and are used for attenuating signals output by the front-end filter follower circuit;
the multiplier circuit is connected with the two input signal attenuation circuits and is used for multiplying output signals of the two input signal attenuation circuits to obtain a second-order compensation value; and
and the addition circuit is connected with the front-end filter following circuit, the multiplier circuit and the bias voltage source and is used for adding the output signals of the front-end filter following circuit, the multiplier circuit and the bias voltage source to obtain a signal value after second-order linear compensation.
In yet another embodiment of the present invention, the input signal attenuation circuit is implemented using an operational amplifier.
In yet another embodiment of the present invention, the control circuit further includes:
and the low-noise transimpedance circuit is used for converting the current signal output by the solid photomultiplier into a voltage signal, filtering the voltage signal and outputting the filtered signal to the front-end analog circuit.
In yet another embodiment of the present invention, the control circuit further includes:
and the detector interface circuit is used for connecting the solid photomultiplier with the adjustable high-voltage power supply circuit and is also used for connecting the solid photomultiplier with the low-noise transimpedance circuit.
In yet another embodiment of the present invention, the control circuit further includes: and the temperature control circuit is used for controlling the working temperature of the solid photomultiplier.
In a further embodiment of the present invention, the temperature control circuit is configured to control the operating temperature of the solid state photomultiplier by controlling the cooling temperature of the semiconductor cooling plate.
In yet another embodiment of the present invention, the control circuit further includes:
and the digital control circuit is used for realizing parameter adjustment of each circuit.
In another embodiment of the present invention, the digital control circuit is implemented by a single chip.
In yet another embodiment of the present invention, the digital control circuit is implemented using an analog potentiometer.
In yet another embodiment of the present invention, the control circuit further includes:
the high-noise circuit board is used for integrating the preceding-stage negative high-voltage switch conversion circuit, the digital control circuit and the detector interface circuit;
the low-noise circuit board is used for integrating other circuits except the preceding-stage negative high-voltage switch conversion circuit, the digital control circuit and the detector interface circuit; and
and the shielding cover is used for shielding the noise generated by the high-noise circuit board.
In a second aspect of embodiments of the present invention, there is provided a linearity compensation method of the control circuit, the method comprising:
calculating a response curve between the output current and the input optical power of the solid-state photomultiplier according to the characteristics of the solid-state photomultiplier;
the response curve is divided into three segments: a linear region, a nonlinear region, and a saturated region;
performing second-order polynomial fitting on the response curve of the nonlinear area to obtain parameters of a second-order polynomial;
calculating the related parameters of the second-order linear compensation circuit by using the parameters of the second-order polynomial;
and setting parameters of the second-order linear compensation circuit according to the related parameters of the second-order linear compensation circuit.
In a third aspect of the embodiments of the present invention, a solid-state photomultiplier module including the control circuit is provided, the solid-state photomultiplier module further including an optical receiving lens and a solid-state photomultiplier tube sequentially arranged along an optical path direction.
In an embodiment of the present invention, the optical receiving lens includes a converging lens, a lens barrel and an aperture stop, which are sequentially arranged along a light path direction, the converging lens is fixed at a front end of the lens barrel, and the lens barrel is implemented by using a telescopic assembly structure.
In another embodiment of the present invention, the solid state photomultiplier is equipped with a cooling element.
In another embodiment of the present invention, the cooling element is a semiconductor cooling plate.
In another embodiment of the present invention, the solid-state photomultiplier further includes a sealed enclosure, the solid-state photomultiplier and the refrigeration element are both disposed inside the sealed enclosure, and the sealed enclosure is filled with nitrogen.
In another embodiment of the present invention, the solid state photomultiplier further includes:
and the module packaging shell is used for packaging the solid photomultiplier and the control circuit.
In another embodiment of the present invention, a heat dissipation element is further disposed outside the module packaging housing for dissipating heat generated by each element in the module packaging housing.
In yet another embodiment of the present invention, the heat dissipating element is a heat sink.
In yet another embodiment of the invention, the heat sink is further equipped with a fan.
According to the control circuit, the linear compensation method and the solid-state photomultiplier module, high-stability low-noise working voltage can be provided for the solid-state photomultiplier, the solid-state photomultiplier can work at the optimal temperature, the sum of dark count noise and shot noise is reduced to the minimum, and the linear working area of the solid-state photomultiplier (SiPM) is widened through linear compensation. The control circuit, the linear compensation method and the solid-state photomultiplier module are particularly suitable for the fields of single photon counting, fluorescent signal detection, laser ranging and the like.
Drawings
The above and other objects, features and advantages of exemplary embodiments of the present invention will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:
fig. 1 schematically shows a schematic structural diagram of an adjustable high voltage power supply circuit according to an embodiment of the present invention;
fig. 2 schematically shows a schematic diagram of a front-end analog circuit according to an embodiment of the present invention, where 72 denotes an output signal of an analog switch switching circuit;
FIG. 3 schematically illustrates a schematic diagram of a circuit board structure according to an embodiment of the disclosure, in which a double-headed arrow indicates transmission of electrical signals between two circuit boards;
FIG. 4 schematically illustrates a structural schematic diagram of a solid state photomultiplier module according to an embodiment of the present disclosure;
FIG. 5 schematically illustrates a flow chart of a method of linearity compensation of a control circuit according to an embodiment of the present disclosure;
FIG. 6 schematically illustrates a response curve between detector output current and input optical power according to an embodiment of the disclosure;
fig. 7 schematically shows a structural schematic diagram of a solid-state photomultiplier with a semiconductor chilling plate according to an embodiment of the present disclosure.
In the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
Detailed Description
The principles and spirit of the present invention will be described with reference to a number of exemplary embodiments. It is understood that these embodiments are given solely for the purpose of enabling those skilled in the art to better understand and to practice the invention, and are not intended to limit the scope of the invention in any way. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
According to an embodiment of the invention, a control circuit, a linearity compensation method and a solid-state photomultiplier module are provided.
In this document, it is to be understood that any number of elements in the figures are provided by way of illustration and not limitation, and any nomenclature is used for differentiation only and not in any limiting sense.
The principles and spirit of the present invention are explained in detail below with reference to several representative embodiments of the invention.
Summary of The Invention
The inventor finds that in the technical scheme of the existing solid-state photomultiplier, the high-voltage power supply voltage of the solid-state photomultiplier is not stable enough and has high noise, the linear working area of the solid-state photomultiplier (SiPM) is narrow, and a contradiction exists between dark count noise and shot noise.
The invention provides a control circuit, a linear compensation method and a solid-state photomultiplier module aiming at the technical problem. The control circuit comprises an adjustable high-voltage power supply circuit and a front-end analog circuit, wherein the adjustable high-voltage power supply circuit outputs an adjustable negative high-voltage power supply in a mode of boosting by a first-stage Boost switch, negative high-voltage conversion by a second-stage LC and filtering and voltage stabilization by a three-stage high-voltage operational amplifier, provides an adjustable high-voltage power supply with high stability and low noise for the SiPM, and fully exerts the characteristics of the SiPM; the front-end analog circuit has a second-order polynomial linear compensation function and is used for compensating a nonlinear area of SiPM photoelectric response and expanding the linear detection range of the detector.
Having described the general principles of the invention, various non-limiting embodiments of the invention are described in detail below.
Fig. 1 schematically illustrates an exemplary structure diagram of an adjustable high-voltage power circuit of a control circuit according to an embodiment of the disclosure.
Fig. 2 schematically shows an exemplary structure diagram of a front-end analog circuit of a control circuit according to an embodiment of the disclosure.
As shown in fig. 1 and 2, the control circuit 30 includes:
the adjustable high-voltage power supply circuit 51 is used for driving a solid photomultiplier, and the adjustable high-voltage power supply circuit 51 comprises a preceding-stage negative high-voltage switch conversion circuit and a succeeding-stage linear voltage stabilizing circuit 65; the front-stage negative high-voltage switch conversion circuit comprises a low-voltage power supply 61, a switch booster circuit 62 and a negative high-voltage conversion circuit 63; the switch boosting circuit 62 is connected to the low-voltage power supply 61, and is configured to perform voltage conversion on the output voltage of the low-voltage power supply 61 to output a positive high voltage; the negative high voltage conversion circuit 63 is connected with the switch boosting circuit 62, and is configured to perform voltage conversion on the positive high voltage output by the switch boosting circuit 62 to output a switch negative high voltage 64; the rear-stage linear voltage stabilizing circuit 65 is implemented by a high-voltage operational amplifier and is used for stabilizing the output of the front-stage negative high-voltage switch conversion circuit; and
and the front-end analog circuit 7 is realized by adopting a second-order linear compensation circuit 76 and is used for filtering the response signal of the solid photomultiplier and compensating the response of the nonlinear area of the solid photomultiplier so as to convert the signal of the nonlinear area into a linear response signal and output the linear response signal.
The traditional switch-type high-voltage power supply adopts a boost switch topological structure to convert a SiPM module low-voltage power supply into positive high voltage, only one-level LC filtering exists in the boost topological structure, the positive high voltage for driving a detector is changed into negative high voltage, and then two-level LC filtering can be introduced into the switch-type high-voltage power supply topology to reduce the switch current noise. In addition, according to the low power consumption characteristic of the SiPM module, a three-stage linear voltage stabilizing circuit is introduced to supply power to the high-voltage operational amplifier by the aid of the negative high voltage of the previous stage, the high-voltage operational amplifier is adopted to form an amplifying circuit to directly output an adjustable negative high-voltage power supply, noise interference of the switching power supply is suppressed by means of the high power supply noise rejection ratio characteristic of the operational amplifier, and the adjustable negative high-voltage bias power supply with high stability and low noise for driving the SiPM is achieved. Meanwhile, a low-noise and low-temperature-drift reference voltage chip is used as a reference voltage of the high-voltage operational amplifier, and the voltage of the input end of the operational amplifier is set by a digital-to-analog converter (DAC) in the digital control circuit 57.
As an example, the switching boost circuit 62 in the embodiment of the present invention includes a first inductor L1, a first switch SW1, and a first capacitor C1;
one end of the first inductor L1 is connected to the positive output end of the low voltage power supply 61, the other end of the first inductor L1 is simultaneously connected to one end of a first switch SW1 and one end of a first capacitor C1, the other end of the first switch SW1 is connected to the power ground, and the other end of the first capacitor C1 is used as the output end of the switching boost circuit 62.
As an example, the negative high voltage conversion circuit 63 in the embodiment of the present invention includes a first diode D1, a second inductor L2, and a second capacitor C2;
the anode of the first diode D1 is connected to one end of the second inductor L2, and the connection point is used as the input end of the negative high voltage transformation circuit 63; the other end of the second inductor L2 is connected to one end of the second capacitor C2, and the connection point is used as the output end of the negative high voltage transformation circuit 63; the other end of the second capacitor C2 and the cathode of the first diode D1 are both connected to the power ground.
By way of example, the subsequent-stage linear voltage stabilizing circuit 65 in the embodiment of the present invention includes:
a low-noise reference circuit 651 for outputting a reference voltage signal;
a digital-to-analog converter circuit 652 connected to the low noise reference circuit 651, for converting the digital signal output from the low noise reference circuit 651 into an analog signal; and
the high-voltage operational amplifier circuit 653 is connected to the digital-to-analog converter circuit 652 and the negative high-voltage converting circuit 63, and configured to amplify the output voltage of the negative high-voltage converting circuit 63 by using the output voltage of the digital-to-analog converter circuit 652 as a reference signal, and output the amplified voltage signal 66 by using the output end of the negative high-voltage converting circuit 63 as the output end of the subsequent linear voltage stabilizing circuit 65.
As an example, the low noise reference circuit 651 in the embodiment of the present invention is implemented using a zener diode.
By way of example, the low-noise reference circuit 651 in embodiments of the present invention is implemented using a low-noise reference voltage chip.
The operation principle of the adjustable high-voltage power supply circuit 51 is as follows: the low-voltage power supply 61 generates positive high voltage through the switch boosting circuit 62, and outputs a switch negative high-voltage power supply 64 through the negative high-voltage conversion circuit 63, the switch negative high-voltage power supply 64 provides high-voltage power supply for the high-voltage operational amplifier 653 in the rear-end adjustable linear voltage stabilizing circuit 65, and the negative feedback voltage amplifying circuit taking the high-voltage operational amplifier 653 as a core outputs a stabilized negative high-voltage power supply 66. The subsequent linear voltage stabilizing circuit 65 adopts the low-noise reference circuit 651 to provide reference voltage for the digital-to-analog converter circuit 652, and the digital-to-analog converter circuit 652 outputs the digitally adjustable reference voltage to the high-voltage operational amplifier 653, so as to realize the voltage adjustment of the negative high-voltage power supply.
As an example, the front-end analog circuit 7 in the embodiment of the present invention includes:
a front-end filter following circuit 75, configured to perform secondary filtering and voltage following on the solid-state photomultiplier output signal 71;
a voltage comparison circuit 74, connected to the front-end filter follower circuit 75, for determining whether the output signal of the solid-state photomultiplier is in a linear region or a nonlinear region, and outputting a switching signal according to the determination result;
a second-order linear compensation circuit 76 connected to the front-end filter follower circuit 75 for performing linear compensation on the output signal of the solid-state photomultiplier in a nonlinear region; and
and an analog switch switching circuit 77, connected to the voltage comparing circuit 74, the front-end filter follower circuit 75, and the second-order linear compensation circuit 76, for outputting an output signal of the front-end filter follower circuit or outputting an output signal of the second-order linear compensation circuit according to the switching signal.
The analog switch switching circuit 77 can realize signal splicing between a linear region and a nonlinear region, and prevent the signal originally belonging to the linear region from being changed into nonlinearity under the action of the second-order linear compensation circuit 76.
As an example, the front-end filter follower circuit 75 in the embodiment of the present invention is implemented by using an operational amplifier, a non-inverting input terminal of which is connected with a capacitor, and a resistor is connected in series between the non-inverting input terminal and a signal input terminal of the front-end filter follower circuit 75 to implement voltage following.
As an example, the voltage comparison circuit 74 in the embodiment of the present invention is implemented by an operational amplifier, and the switching point voltage 73 is input to an inverting input terminal of the voltage comparison circuit 74.
As an example, the second-order linearity compensation circuit 76 in the embodiment of the present invention includes:
a bias voltage source for providing a bias voltage 78;
two parallel input signal attenuation circuits 761 and 762 having different attenuation coefficients, connected to the front-end filter follower circuit 75, for attenuating the signal output by the front-end filter follower circuit 75; the two attenuated signals are respectively used as the input signal of the first stage and the input signal of the second stage of the rear-end multiplier circuit;
a multiplier circuit 763, connected to the two input signal attenuation circuits 761 and 762, for multiplying output signals of the two input signal attenuation circuits 761 and 762 to obtain a second-order compensation value; and
and an adding circuit 764, connected to the front-end filter follower circuit 75, the multiplier circuit 763, and the bias voltage source, for adding the output signals 78 of the front-end filter follower circuit 75, the multiplier circuit 763, and the bias voltage source to obtain a second-order linearly compensated signal value.
The front-end analog circuit 7 compensates the response of the nonlinear region by using a second-order polynomial compensation method, performs signal re-splicing by using an analog switch, and converts the signal of the nonlinear region into a linear response signal to be output, thereby expanding the linear detection range of the detector.
As an example, the input signal attenuation circuits 761 and 762 in the embodiment of the present invention are implemented using operational amplifiers.
The front-end analog circuit 7 works according to the following principle: the input voltage signal 71 (i.e., the output signal of SiPM) is input to the front-end filter follower circuit 75, and is subjected to secondary filtering and voltage following, and the voltage comparator circuit 74 is used to determine the linear region and the nonlinear region of the input voltage signal 71, and the analog switch circuit 77 is controlled according to the determination result. If the input voltage signal 71 itself is in the linear region, it is directly output through one end of the analog switch circuit 77; if the input voltage signal 71 is in the nonlinear region, it enters the second-order linear compensation circuit 76 for linear compensation and then is output from the other end of the analog switch circuit 77. The critical point between the linear region and the non-linear region is called the switching point voltage 73, and the switching point voltage 73 can be set according to actual conditions. Signals with a voltage value less than the switching point voltage 73 belong to a linear region, and signals with a voltage value greater than the switching point voltage 73 belong to a nonlinear region. The second-order linear compensation circuit 76 firstly attenuates the signal output from the front-end filter follower circuit 75 by the first-order input signal attenuation circuit 761 and the second-order input signal attenuation circuit 762, then multiplies the signal by the rear-end multiplier circuit 763 to obtain a second-order compensation value, and finally adds the input signal, the compensation signal, and the bias voltage 78 by the rear-end addition circuit 764 to output a second-order linearly compensated signal value.
Fig. 3 schematically shows a structural schematic diagram of a circuit board of the control circuit 30 according to an embodiment of the present disclosure.
As shown in fig. 3, the control circuit 30 according to the embodiment of the present invention further includes:
and the low-noise transimpedance circuit 54 is configured to convert the current signal output by the solid-state photomultiplier into a voltage signal, filter the voltage signal, and output the filtered signal to the front-end analog circuit 7.
As an example, the control circuit 30 of the embodiment of the present invention further includes:
and the detector interface circuit 53 is used for connecting the solid photomultiplier with the adjustable high-voltage power supply circuit and is also used for connecting the solid photomultiplier with the low-noise transimpedance circuit 54.
As an example, the control circuit 30 of the embodiment of the present invention further includes: and the temperature control circuit 52 is used for controlling the working temperature of the solid-state photomultiplier.
By way of example, the temperature control circuit 52 of the embodiment of the present invention is used to control the operating temperature of the solid-state photomultiplier by controlling the cooling temperature of the semiconductor cooling plate. The temperature control circuit 52 is also provided with a temperature control power supply circuit 58 for supplying power to the temperature control circuit 52.
In order to balance dark count noise and shot noise of a solid photomultiplier (SiPM), the embodiment of the invention adopts a semiconductor refrigerating sheet to control the temperature of the SiPM, and controls the refrigerating temperature of the semiconductor refrigerating sheet through a digital control circuit 30, so that the SiPM works at an optimal temperature point and obtains the lowest noise output. And the SiPM, the semiconductor refrigerating sheet and the temperature sensor are packaged together in an independent closed packaging mode, so that the refrigerating volume is reduced, the power consumption is reduced, and the circuit noise is reduced.
As an example, the control circuit 30 of the embodiment of the present invention further includes:
and the digital control circuit 57 is used for realizing parameter adjustment of each functional circuit. For example, the cooling temperature of the semiconductor cooling plate is adjusted, the voltage at the input end of the high-voltage operational amplifier circuit 653 in the subsequent linear voltage stabilizing circuit 65 is adjusted, and the like.
As an example, the digital control circuit 57 of the embodiment of the present invention is implemented using an analog potentiometer.
As an example, the digital control circuit 57 of the embodiment of the present invention is implemented by a single chip microcomputer. The digital control circuit 57 may use a single chip Microcomputer (MCU) to respond to a user instruction, and use a digital-to-analog converter (DAC) to perform parameter setting of SiPM gain and operating temperature, thereby implementing digital adjustment and compensation of various functional circuit parameters. The mode that the singlechip replaces the mechanical adjusting parameters of the analog potentiometer effectively improves the efficiency and the reliability of circuit adjustment and is more convenient for users to use. And the digital control mode can execute more excellent circuit digital negative feedback control algorithm, accurately lock circuit parameters and improve control precision.
Fig. 4 schematically shows a structural diagram of a solid-state photomultiplier module according to an embodiment of the present disclosure, and this figure shows an application scenario of the control circuit 30 according to an embodiment of the present disclosure.
As shown in fig. 4, the control circuit 30 according to the embodiment of the present invention further includes:
the high-noise circuit board 31 is used for integrating the preceding-stage negative high-voltage switch conversion circuit, the digital control circuit 57 and the detector interface circuit;
a low-noise circuit board 32 for integrating the rest of the circuits except the preceding-stage negative high-voltage switching conversion circuit, the digital control circuit 57 and the detector interface circuit 53; and
and a shield cover for shielding the noise generated from the high noise circuit board 31.
The high-noise circuit board 31 is used for integrating functional circuits with larger noise, the functional circuits with larger noise include but are not limited to a preceding stage negative high-voltage switch conversion circuit, a digital control circuit 57 and a detector interface circuit, the low-noise circuit board 32 is used for integrating functional circuits with sensitive noise, and the integrated circuits on the high-noise circuit board 31 and the low-noise circuit board 32 are determined according to actual conditions. The high noise circuit board 31 and the low noise circuit board 32 can be connected by a circuit board connecting base 33. The heat-conducting potting adhesive 36 is filled around the low-noise circuit board 32, so that components with large heat productivity and large temperature influence can be radiated, the influence of noise increase caused by overhigh local temperature is reduced, and circuit noise is suppressed. The two circuit boards are separated into a double-layer structure, so that the interference of a strong interference circuit on a noise sensitive circuit can be isolated, the single-point common grounding is realized, and the noise is inhibited.
The number of the shielding cases may be two, and the two shielding cases are respectively a high-voltage power supply shielding case 34 and a digital circuit shielding case 35, and are respectively used for shielding noise generated by the adjustable high-voltage power supply circuit and the digital control circuit 57, and further suppressing interference of a high-noise circuit on the high-noise circuit board 31 on a noise-sensitive circuit.
Fig. 5 schematically illustrates a flow chart of a method of linearity compensation of the control circuit 30 according to an embodiment of the present disclosure.
As shown in fig. 5, the linearity compensation method of the control circuit 30 of the embodiment of the present disclosure may generally include:
step S1, calculating a response curve between the output current and the input optical power of the solid-state photomultiplier according to the characteristics of the solid-state photomultiplier;
step S2, dividing the response curve into three sections: a linear region, a nonlinear region, and a saturated region;
step S3, performing second-order polynomial fitting on the response curve of the nonlinear area to obtain parameters of a second-order polynomial;
step S3, calculating the related parameters of the second-order linear compensation circuit by using the parameters of the second-order polynomial; and
and step S5, setting parameters of the second-order linear compensation circuit according to the related parameters of the second-order linear compensation circuit.
A solid state photomultiplier (SiPM) is composed of an array of APD cells, and has the following photoresponse formula:
where Nfired is the number of APD cells to excite the ignition, M is the total number of APD cells in the detector, PDE is the photon detection efficiency, Nph is the incident photon number, and tp is the recovery time.
Where G is the multiplication gain of the detector and e is the charge constant.
N ph The relationship to the input optical power is as follows:
wherein Pin is input optical power, h is Planck constant, c is optical speed, and λ is detection signal optical wavelength.
According to the photoelectric response formula of the SiPM, given detector parameters are input into the formula, and a response curve of the detector output current Iout and the input optical power Pin shown in fig. 6 can be obtained.
As shown in fig. 6, the response curve is divided into three segments, namely a linear region 81, a nonlinear region 82 and a saturation region 83. And performing second-order polynomial fitting on the partial curve of the nonlinear region to obtain a second-order polynomial fitting curve 84. First, the second order coefficient of the second order polynomial fitting curve 84 is divided by the first order coefficient, and the obtained value is used for setting the attenuation coefficients of the first input signal attenuation circuit 761 and the second input signal attenuation circuit 762; the constant coefficients of the second order polynomial fit curve 84 are then divided by the first order coefficients and the resulting values are used to set the value of the bias voltage 78. Therefore, the response of the nonlinear area can be compensated by a second-order polynomial compensation method, and the signal of the nonlinear area is converted into a linear response signal to be output, so that the linear detection range of the detector is expanded.
Fig. 4 schematically shows a structural schematic diagram of a solid state photomultiplier module according to an embodiment of the present disclosure.
Fig. 6 schematically shows a structural schematic diagram of a solid-state photomultiplier with a semiconductor chilling plate according to an embodiment of the present disclosure.
As shown in fig. 4 and 6, the solid-state photomultiplier module according to the embodiment of the present disclosure includes the above-mentioned control circuit 30, and the optical receiving lens 10 and the solid-state photomultiplier 21 that are sequentially arranged along the optical path direction, where the control circuit 30 is configured to control the solid-state photomultiplier 21.
The optical receiving lens 10 of the embodiment of the invention comprises a convergent lens 11, a lens barrel 13 and an aperture diaphragm 12 which are sequentially arranged along the direction of an optical path, wherein the convergent lens 11 is fixed at the front end of the lens barrel 13, and the lens barrel 13 is realized by adopting a telescopic assembly structure. The converging lens 11 is used for converging a fluorescent signal to be detected, the small-hole diaphragm 12 is used for inhibiting a stray light signal, and the telescopic lens barrel 13 can adjust the distance between the converging lens 11 and the SiPM, so that the SiPM is uniformly covered by fluorescent light irradiated on the SiPM, and the dynamic detection range of the module is enlarged.
The fluorescence emitted by the fluorescence generating object 02 is received and converged by the optical receiving lens 10, covers the detection surface of the solid-state photomultiplier 20 (i.e., the detector), is absorbed by the detector and converted into a current signal, and the current signal is subjected to electrical signal processing by the control circuit 30 to output an analog voltage signal which can be recognized by the rear-end acquisition circuit, thereby completing the detection of a fluorescence signal.
As an example, the solid-state photomultiplier 21 of the embodiment of the present invention is equipped with a cooling element for adjusting the operating temperature of the SiPM so that the SiPM operates at an optimum temperature to effectively suppress noise.
As an example, the refrigeration element according to the embodiment of the present invention is a semiconductor refrigeration sheet 23, and is equipped with a temperature sensor 22, the temperature sensor 22 is used for sensing the temperature of the sipms, and both the solid-state photomultiplier tube 21 and the temperature sensor 22 are welded on the refrigeration surface of the semiconductor refrigeration sheet 23.
As an example, the solid-state photomultiplier module according to the embodiment of the present invention further includes a sealed enclosure 24, the solid-state photomultiplier 21, the semiconductor chilling plate 23, and the temperature sensor 22 are all disposed inside the enclosure 24, but the sensor pin is led out of the enclosure 24, the enclosure 24 is sealed by a glass window, and an anti-reflection film with a wavelength corresponding to the detected fluorescence is plated on the glass window, so as to ensure that the fluorescence is incident on the detection surface of the solid-state photomultiplier 21 as completely as possible without being reflected. The closed shell 24 is filled with nitrogen to prevent dew condensation on the surface of the sensor from affecting the detection of optical signals. The solid-state photomultiplier 21, the semiconductor refrigerating sheet 23 and the temperature sensor 22 are packaged together in an independent sealed packaging mode, so that the refrigerating volume and the power consumption can be reduced, and the circuit noise can be reduced.
As an example, the solid-state photomultiplier module of the embodiment of the present invention further includes:
and a module packaging housing 40 for packaging the solid state photomultiplier tube 21 and the control circuit 30.
As an example, the module package housing 40 of the embodiment of the present invention is further provided with a heat dissipation element at an outer side thereof for dissipating heat generated by each element in the module package housing. The low noise circuit board 32 is closely attached to the module enclosure 40 for good heat dissipation. The electrical pins of the solid state photomultiplier head 20 are soldered to the low noise circuit board 32 and heat is dissipated through the housing 40.
As an example, the heat dissipating element of the embodiment of the present invention is a heat sink.
As an example, the heat sink of the embodiment of the present invention is further equipped with a fan for dissipating heat from the heat sink.
By way of example, the solid state photomultiplier module of an embodiment of the present invention further includes a module electrical interface circuit 56, the module electrical interface circuit 56 being part of the control circuit 30 and being an interface circuit for the entire solid state photomultiplier module. The module electrical interface circuit 56 includes a power supply interface, an analog signal output interface, a digital control communication interface, an analog control interface, and the like, and realizes external interaction of the solid-state photomultiplier module.
The module electrical interface circuit 56 may also be noise shielded using the module electrical interface shielding 37.
While the spirit and principles of the invention have been described with reference to several particular embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, nor is the division of aspects, which is for convenience only as the features in such aspects may not be combined to benefit. The invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (29)
1. A control circuit, comprising:
the adjustable high-voltage power supply circuit is used for driving the solid photomultiplier and comprises a preceding-stage negative high-voltage switch conversion circuit and a succeeding-stage linear voltage stabilizing circuit; the preceding-stage negative high-voltage switch conversion circuit comprises a low-voltage power supply, a switch booster circuit and a negative high-voltage conversion circuit; the switch booster circuit is connected with the low-voltage power supply and is used for performing voltage conversion on the output voltage of the low-voltage power supply so as to output positive high voltage; the negative high-voltage conversion circuit is connected with the switch boosting circuit and is used for performing voltage conversion on the positive high voltage output by the switch boosting circuit so as to output a switch negative high voltage; the rear-stage linear voltage stabilizing circuit is realized by adopting a high-voltage operational amplifier and is used for stabilizing the output of the front-stage negative high-voltage switch conversion circuit; and
and the front-end analog circuit is realized by adopting a second-order linear compensation circuit and is used for filtering the response signal of the solid photomultiplier and compensating the response of the nonlinear area of the solid photomultiplier so as to convert the signal of the nonlinear area into a linear response signal and output the linear response signal.
2. The control circuit of claim 1, wherein the switching boost circuit comprises a first inductor L1, a first switch SW1, and a first capacitor C1;
one end of the first inductor L1 is connected to the positive output end of the low-voltage power supply, the other end of the first inductor L1 is connected to one end of a first switch SW1 and one end of a first capacitor C1, the other end of the first switch SW1 is connected to the power ground, and the other end of the first capacitor C1 is used as the output end of the switching boost circuit.
3. The control circuit of claim 1, wherein the negative high voltage converter circuit comprises a first diode D1, a second inductor L2, and a second capacitor C2;
the anode of the first diode D1 is connected with one end of the second inductor L2, and the connection point is used as the input end of the negative high-voltage transformation circuit; the other end of the second inductor L2 is connected with one end of the second capacitor C2, and the connection point is used as the output end of the negative high-voltage conversion circuit; the other end of the second capacitor C2 and the cathode of the first diode D1 are both connected to the power ground.
4. The control circuit of claim 1, wherein the subsequent linear voltage regulator circuit comprises:
a low noise reference circuit for outputting a reference voltage signal;
the digital-to-analog converter circuit is connected with the low-noise reference circuit and is used for converting the digital signals output by the low-noise reference circuit into analog signals; and
and the high-voltage operational amplifier circuit is connected with the digital-to-analog converter circuit and the negative high-voltage conversion circuit, and is used for amplifying the output voltage of the negative high-voltage conversion circuit by taking the output voltage of the digital-to-analog converter circuit as a reference signal, and the output end of the high-voltage operational amplifier circuit is used as the output end of the post-stage linear voltage stabilizing circuit.
5. The control circuit of claim 4, wherein the low noise reference circuit is implemented using a zener diode.
6. The control circuit of claim 4, wherein the low noise reference circuit is implemented using a low noise reference voltage chip.
7. The control circuit of claim 1, wherein the front-end analog circuit comprises:
the front-end filtering following circuit is used for carrying out secondary filtering and voltage following on the output signals of the solid photomultiplier;
the voltage comparison circuit is connected with the front-end filter follower circuit and used for judging whether the output signal of the solid-state photomultiplier is in a linear region or a nonlinear region and outputting a switching signal according to a judgment result;
the second-order linear compensation circuit is connected with the front-end filter follower circuit and is used for performing linear compensation on the output signal of the solid photomultiplier in a nonlinear area; and
and the analog switch switching circuit is connected with the voltage comparison circuit, the front end filter following circuit and the second-order linear compensation circuit and is used for outputting an output signal of the front end filter following circuit or outputting an output signal of the second-order linear compensation circuit according to the switching signal.
8. The control circuit of claim 7, wherein the front-end filter follower circuit is implemented by using an operational amplifier, a non-inverting input terminal of the operational amplifier is connected with a capacitor, and a resistor is connected in series between the non-inverting input terminal and a signal input terminal of the front-end filter follower circuit to implement voltage following.
9. The control circuit of claim 7, wherein the voltage comparison circuit is implemented using an operational amplifier.
10. The control circuit of claim 7, wherein the second order linearity compensation circuit comprises:
a bias voltage source for providing a bias voltage;
the two input signal attenuation circuits which are connected in parallel and have different attenuation coefficients are connected with the front-end filter follower circuit and are used for attenuating signals output by the front-end filter follower circuit;
the multiplier circuit is connected with the two input signal attenuation circuits and is used for multiplying output signals of the two input signal attenuation circuits to obtain a second-order compensation value; and
and the addition circuit is connected with the front-end filter following circuit, the multiplier circuit and the bias voltage source and is used for adding the output signals of the front-end filter following circuit, the multiplier circuit and the bias voltage source to obtain a signal value after second-order linear compensation.
11. The control circuit of claim 10, wherein the input signal attenuation circuit is implemented using an operational amplifier.
12. The control circuit of claim 1, further comprising:
and the low-noise transimpedance circuit is used for converting the current signal output by the solid photomultiplier into a voltage signal, filtering the voltage signal and outputting the filtered signal to the front-end analog circuit.
13. The control circuit of claim 12, further comprising:
and the detector interface circuit is used for connecting the solid photomultiplier with the adjustable high-voltage power supply circuit and is also used for connecting the solid photomultiplier with the low-noise transimpedance circuit.
14. The control circuit of claim 1, further comprising: and the temperature control circuit is used for controlling the working temperature of the solid photomultiplier.
15. The control circuit of claim 14, wherein the temperature control circuit is configured to control the operating temperature of the solid state photomultiplier by controlling a cooling temperature of a semiconductor cooling plate.
16. The control circuit of claim 13, further comprising:
and the digital control circuit is used for realizing parameter adjustment of each circuit.
17. The control circuit of claim 16, wherein the digital control circuit is implemented using a single-chip microcomputer.
18. The control circuit of claim 16, wherein the digital control circuit is implemented using an analog potentiometer.
19. The control circuit according to any one of claims 16 to 18, further comprising:
the high-noise circuit board is used for integrating the preceding-stage negative high-voltage switch conversion circuit, the digital control circuit and the detector interface circuit;
the low-noise circuit board is used for integrating other circuits except the preceding-stage negative high-voltage switch conversion circuit, the digital control circuit and the detector interface circuit; and
and the shielding cover is used for shielding the noise generated by the high-noise circuit board.
20. A method of linearity compensation of a control circuit according to any of claims 1 to 19, comprising:
calculating a response curve between the output current and the input optical power of the solid-state photomultiplier according to the characteristics of the solid-state photomultiplier;
the response curve is divided into three segments: a linear region, a nonlinear region, and a saturated region;
performing second-order polynomial fitting on the response curve of the nonlinear area to obtain parameters of a second-order polynomial;
calculating the related parameters of the second-order linear compensation circuit by using the parameters of the second-order polynomial;
and setting parameters of the second-order linear compensation circuit according to the related parameters of the second-order linear compensation circuit.
21. The solid-state photomultiplier module including the control circuit according to any one of claims 1 to 19, further comprising an optical receiving lens and a solid-state photomultiplier tube arranged in this order in the optical path direction.
22. The solid state photomultiplier module of claim 21, wherein the optical receiver lens includes a converging lens, a barrel and an aperture stop sequentially arranged along the optical path, the converging lens is fixed at the front end of the barrel, and the barrel is realized by a telescopic assembly structure.
23. The solid state photomultiplier module of claim 21, wherein the solid state photomultiplier tube is equipped with a cooling element.
24. The solid state photomultiplier module of claim 23 wherein the cooling element is a semiconductor cooling plate.
25. The solid state photomultiplier module of claim 23 or 24, further comprising a hermetically sealed enclosure, the solid state photomultiplier tube and the cooling element both being disposed within the enclosed enclosure, the enclosed enclosure being filled with nitrogen.
26. The solid state photomultiplier module of claim 21, further comprising:
and the module packaging shell is used for packaging the solid photomultiplier and the control circuit.
27. The solid state photomultiplier module of claim 26 wherein a heat sink is further disposed outside the module enclosure for dissipating heat generated by the components within the module enclosure.
28. The solid state photomultiplier module of claim 27 wherein the heat sink element is a heat sink.
29. The solid state photomultiplier module of claim 28, wherein the heat sink is further equipped with a fan.
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Address after: 350100 floor 5, building 19, phase II, innovation park, No. 7, middle wulongjiang Avenue, Shangjie Town, Minhou County, Fuzhou City, Fujian Province Patentee after: Fujian Haichuang Photoelectric Technology Co.,Ltd. Address before: 350100 27th floor, Pioneer Building, Haixi hi tech Industrial Park, high tech Zone, Fuzhou City, Fujian Province Patentee before: FUJIAN HAICHUANG PHOTOELECTRIC CO.,LTD. |
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