CN111929479A - Wafer test micro probe based on micro electro mechanical system - Google Patents

Wafer test micro probe based on micro electro mechanical system Download PDF

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Publication number
CN111929479A
CN111929479A CN202010779495.8A CN202010779495A CN111929479A CN 111929479 A CN111929479 A CN 111929479A CN 202010779495 A CN202010779495 A CN 202010779495A CN 111929479 A CN111929479 A CN 111929479A
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CN
China
Prior art keywords
probe
micro
layers
wafer test
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010779495.8A
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Chinese (zh)
Inventor
刘凯
殷岚勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Twinsolution Technology (suzhou) Ltd
Original Assignee
Twinsolution Technology (suzhou) Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Twinsolution Technology (suzhou) Ltd filed Critical Twinsolution Technology (suzhou) Ltd
Priority to CN202010779495.8A priority Critical patent/CN111929479A/en
Publication of CN111929479A publication Critical patent/CN111929479A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00111—Tips, pillars, i.e. raised structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00674—Treatments for improving wear resistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00682—Treatments for improving mechanical properties, not provided for in B81C1/00658 - B81C1/0065
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G01R1/06761—Material aspects related to layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing

Abstract

The invention discloses a wafer test micro probe based on a micro electro mechanical system, which comprises a probe main body, wherein the probe main body is of an approximate L-shaped structure, the probe main body comprises a first end part, a second end part and a connecting part, the connecting part is positioned between the first end part and the second end part and is used for connecting the first end part and the second end part, a groove parallel to the connecting part is arranged on the connecting part, and the groove penetrates through the connecting part from front to back. The probe of the invention can be used for testing chips with micro-spacing.

Description

Wafer test micro probe based on micro electro mechanical system
Technical Field
The invention relates to the field of semiconductor test equipment, in particular to a wafer test micro probe based on a micro electro mechanical system.
Background
With the increasing progress of chip manufacturing processes, the periphery of chip packages becomes smaller, resulting in the distance between chip pins becoming smaller and smaller. The conventional spring probe cannot meet the requirement of small-pitch test, and now it is necessary to develop a new structure of micro probe to meet the requirement of the existing small-pitch test.
Disclosure of Invention
The invention aims to provide a wafer test micro probe based on a micro electro mechanical system, and the probe can be used for testing chips with micro spacing.
The technical scheme is as follows:
wafer test fine probe based on micro-electromechanical system, including the probe main part, the probe main part is approximate "L" type structure, the probe main part includes first end, second end to and be located between first end, the second end, be used for connecting the connecting portion of first end, second end, be equipped with on the connecting portion and be on a parallel with the recess of connecting portion, link up in around the recess connecting portion.
Further, the probe body is formed by combining multiple layers of composite materials.
Furthermore, part of the layers of the probe main body are conductive layers, and part of the layers of the probe main body are wear-resistant layers.
Further, the conducting layer and the wear-resistant layer are distributed at intervals.
In one embodiment, the probe body is formed by combining five layers of composite materials, the conductive layers are two layers, the wear-resistant layers are three layers, the two conductive layers are distributed at intervals, and each conductive layer is respectively positioned between the two adjacent wear-resistant layers.
Further, the first end portion has at least a first projection, one end of which is fixed to the first end portion, and the other end of which extends obliquely downward from the second end portion.
Further, the first end portion is further provided with a second protrusion, and the distance from the second protrusion to the tail portion of the first end portion is larger than the distance from the first protrusion to the tail portion of the first end portion.
Further, the first protrusion and the second protrusion are respectively located on different sides of the first end portion.
The following illustrates the advantages or principles of the invention:
1. the probe comprises a first end part, a second end part and a connecting part, wherein a groove is arranged on the connecting part. When the probe is used for testing, the first end part is contacted with the PCB, and the second end part is contacted with the chip. In the specific application, the PCB side is fixed, after the chip contacts the probe, the probe is promoted to generate buckling deformation and generate micro elastic force, when the probe is buckled and deformed, the buckling elastic force of the probe can be reduced, the probe is elastically contacted with the chip, and therefore the chip is protected and is not damaged. The probe of the invention adopts the processing technology of a micro-electro-mechanical system, has smaller volume, can be made very thin and can be used for testing chips with tiny spacing.
2. The probe body can be made of a single-layer material, and can also be made of a multi-layer composite material. When the probe main body is made of a multi-layer composite material, part of the layers are made of a conductive material with good conductivity, so that the conductivity of the probe is improved, and the other part of the layers are made of a wear-resistant material with wear resistance, so that the mechanical wear life of the probe is prolonged.
Drawings
FIG. 1 is a schematic structural diagram of a probe body according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a probe body of an embodiment of the invention;
FIG. 3 is an enlarged view of a portion A of FIG. 2;
FIG. 4 is a cross-sectional view of a connection portion of an embodiment of the present invention;
FIG. 5 is a partial enlarged view of portion B of FIG. 4;
FIG. 6 is a state of use reference diagram of an embodiment of the present invention;
description of reference numerals:
1. a probe body; 2. a first end portion; 3. a second end portion; 4. a connecting portion; 5. a groove; 6. a conductive layer; 7. a wear layer; 8. a first protrusion; 9. a second protrusion; 10. an upper cover plate; 11. a lower cover plate; 12. a PCB board; 13. and (3) a chip.
Detailed Description
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "middle", "inner", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
As shown in fig. 1 to 5, the embodiment discloses a wafer testing micro probe based on a micro electro mechanical system, which includes a probe body 1, the probe body 1 is approximately "L" shaped, the probe body 1 includes a first end portion 2, a second end portion 3, and a connecting portion 4 located between the first end portion 2 and the second end portion 3 and used for connecting the first end portion 2 and the second end portion 3, a groove 5 parallel to the connecting portion 4 is disposed on the connecting portion 4, and the groove 5 penetrates the connecting portion 4 in front and back directions.
When the probe of the embodiment is used for testing, the first end part 2 is contacted with the PCB 12, and the second end part 3 is contacted with the chip 13. In specific application, the PCB 12 side is fixed, after the chip 13 contacts the probe, the probe is promoted to generate buckling deformation and generate micro elastic force, when the probe is buckled and deformed, the elastic force generated by buckling of the probe can be reduced, the probe is elastically contacted with the chip, and therefore the chip 13 is protected and the chip 13 is not damaged. The probe of the invention adopts the processing technology of a micro-electro-mechanical system, has small volume, can be made very thin and can be used for testing the chips 13 with tiny spacing.
In one embodiment, the probe body 1 can be made of a single layer of material, which is the conductive layer 6.
In one embodiment, the probe body 1 can be made of a two-layer composite material, preferably, one layer is a conductive layer 6, the other layer can be a wear-resistant layer 7, and the conductive layer 6 is connected with the wear-resistant layer 7.
In another embodiment, the probe body 1 may be made of a three-layer composite material, preferably, one layer is conductive, the other two layers are wear-resistant layers 7, and the conductive layer 6 is located in the middle of the two wear-resistant layers 7.
The probe body 1 can also be made of more than three layers of composite materials, and preferably can be made of five layers of composite materials, wherein two layers are conductive layers 6, and three layers are wear-resistant layers 7. The two conductive layers 6 are distributed at intervals, and each conductive layer 6 is respectively positioned between the two adjacent wear-resistant layers 7.
In the above embodiment, the conductive layer 6 is made of a material with good conductivity, which is used to improve the conductivity of the probe body 1, and preferably, the material with good conductivity is copper and an alloy of copper, silver and an alloy of silver, etc. The wear-resistant layer 7 is made of a relatively wear-resistant material, and is used for prolonging the mechanical wear life of the probe body 1.
The first end portion 2 of the present embodiment has a first protrusion 8, one end of the first protrusion 8 is fixed to the first end portion 2, and the other end of the first protrusion 8 extends obliquely downward from the second end portion 3.
The first end portion 2 is further provided with a second protrusion 9, the distance from the second protrusion 9 to the tail portion of the first end portion 2 is larger than the distance from the first protrusion 8 to the tail portion of the first end portion 2, and the first protrusion 8 and the second protrusion 9 are respectively located on different side faces of the first end portion 2.
As shown in fig. 6, fig. 6 is a reference view of the probe body 1 when used for a test. When the probe body 1 is used for testing, because the first end part 2 is provided with the first protrusion 8, and the width of the total section of the first protrusion 8 and the probe body 1 is larger than the width of the through hole of the upper cover plate 10, one end of the second end part 3 of the probe body 1 firstly passes through the through hole of the upper cover plate 10 and then passes through the through hole of the lower cover plate 11 during installation. After the probe body 1 is connected with the upper cover plate 10 and the lower cover plate 11, the probe body 1 cannot fall off from the through hole of the upper cover plate 10 due to the existence of the first protrusion 8. The second protrusion 9 is located in the through hole of the upper cover plate 10, and the second protrusion 9 has a certain friction force on the wall of the through hole, so that the mobility of the probe body 1 in the through hole can be limited.
The embodiments of the present invention are not limited thereto, and according to the above-mentioned contents of the present invention, the present invention can be modified, substituted or combined in other various forms without departing from the basic technical idea of the present invention.

Claims (8)

1. The utility model provides a wafer test fine probe based on micro-electromechanical system which characterized in that, includes the probe main part, the probe main part is approximate "L" type structure, the probe main part includes first end, second end to and be located between first end, the second end, be used for connecting the connecting portion of first end, second end, be equipped with on the connecting portion and be on a parallel with the recess of connecting portion, link up in around the recess connecting portion.
2. The mems-based wafer test micro-probe of claim 1, wherein the probe body is assembled from multiple layers of composite materials.
3. The mems-based wafer test micro-probe of claim 2, wherein the portion of the layer of the probe body is a conductive layer and the portion of the layer of the probe body is an abrasion resistant layer.
4. The mems-based wafer test micro-probe of claim 3, wherein the conductive layer is spaced apart from the wear layer.
5. The mems-based wafer test micro probe of claim 3, wherein the probe body is formed by combining five layers of composite materials, the conductive layers are two layers, the wear resistant layers are three layers, the two conductive layers are spaced apart, and each conductive layer is located between two adjacent wear resistant layers.
6. The micro-electromechanical system (MEMS) -based wafer test micro-probe according to any one of claims 1 to 5, wherein the first end portion has at least a first protrusion, one end of the first protrusion is fixed to the first end portion, and the other end of the first protrusion extends obliquely downward from the second end portion.
7. The mems-based wafer test micro-probe of claim 6, wherein the first end further defines a second bump, the second bump being spaced further from the first end tail than the first bump.
8. The mems-based wafer test micro-probe of claim 7, wherein the first bump and the second bump are located on different sides of the first end portion.
CN202010779495.8A 2020-08-05 2020-08-05 Wafer test micro probe based on micro electro mechanical system Pending CN111929479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010779495.8A CN111929479A (en) 2020-08-05 2020-08-05 Wafer test micro probe based on micro electro mechanical system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010779495.8A CN111929479A (en) 2020-08-05 2020-08-05 Wafer test micro probe based on micro electro mechanical system

Publications (1)

Publication Number Publication Date
CN111929479A true CN111929479A (en) 2020-11-13

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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2060921A1 (en) * 2007-11-16 2009-05-20 Technoprobe S.p.A Contact probe for testing head having vertical probes and related testing head for testing microstructure electric performance
JP2013024689A (en) * 2011-07-20 2013-02-04 Micronics Japan Co Ltd Probe allowing electric signals to pass, electric connecting device using the same, and probe manufacturing method
WO2016156002A1 (en) * 2015-03-31 2016-10-06 Technoprobe S.P.A. Contact probe and corresponding testing head with vertical probes, particularly for high frequency applications
US20170176497A1 (en) * 2015-12-16 2017-06-22 Mpi Corporation Microelectromechanical probe, method of manufacturing the same and probe set
CN107430151A (en) * 2015-03-31 2017-12-01 泰克诺探头公司 Especially suitable for frequency applications vertical contact probe and include its measuring head
CN206945747U (en) * 2017-05-17 2018-01-30 深圳凯智通微电子技术有限公司 Integrated chip test bench and integrated chip test module
US20180267083A1 (en) * 2017-03-14 2018-09-20 Mpi Corporation Microelectromechanical probe and probe head having the same
CN108593980A (en) * 2018-04-18 2018-09-28 强半导体（苏州）有限公司 A kind of manufacturing method of contact probe, measuring head and contact probe
US20190072586A1 (en) * 2017-09-01 2019-03-07 Chunghwa Precision Test Tech. Co., Ltd. Probe assembly and probe structure thereof
CN109564241A (en) * 2016-08-11 2019-04-02 泰克诺探头公司 For testing the contact probe and corresponding measuring head of the device of electronic device
US20190101568A1 (en) * 2017-09-29 2019-04-04 Chunghwa Precision Test Tech. Co., Ltd. Probe assembly and capacitive probe thereof
CN109581006A (en) * 2017-09-29 2019-04-05 中华精测科技股份有限公司 Probe unit and its rectangular probe
US20190137544A1 (en) * 2017-11-03 2019-05-09 Chunghwa Precision Test Tech. Co., Ltd. Probe assembly and engaged-type capacitive probe thereof

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2060921A1 (en) * 2007-11-16 2009-05-20 Technoprobe S.p.A Contact probe for testing head having vertical probes and related testing head for testing microstructure electric performance
JP2013024689A (en) * 2011-07-20 2013-02-04 Micronics Japan Co Ltd Probe allowing electric signals to pass, electric connecting device using the same, and probe manufacturing method
WO2016156002A1 (en) * 2015-03-31 2016-10-06 Technoprobe S.P.A. Contact probe and corresponding testing head with vertical probes, particularly for high frequency applications
CN107430151A (en) * 2015-03-31 2017-12-01 泰克诺探头公司 Especially suitable for frequency applications vertical contact probe and include its measuring head
US20170176497A1 (en) * 2015-12-16 2017-06-22 Mpi Corporation Microelectromechanical probe, method of manufacturing the same and probe set
CN109564241A (en) * 2016-08-11 2019-04-02 泰克诺探头公司 For testing the contact probe and corresponding measuring head of the device of electronic device
US20180267083A1 (en) * 2017-03-14 2018-09-20 Mpi Corporation Microelectromechanical probe and probe head having the same
CN206945747U (en) * 2017-05-17 2018-01-30 深圳凯智通微电子技术有限公司 Integrated chip test bench and integrated chip test module
US20190072586A1 (en) * 2017-09-01 2019-03-07 Chunghwa Precision Test Tech. Co., Ltd. Probe assembly and probe structure thereof
US20190101568A1 (en) * 2017-09-29 2019-04-04 Chunghwa Precision Test Tech. Co., Ltd. Probe assembly and capacitive probe thereof
CN109581006A (en) * 2017-09-29 2019-04-05 中华精测科技股份有限公司 Probe unit and its rectangular probe
US20190137544A1 (en) * 2017-11-03 2019-05-09 Chunghwa Precision Test Tech. Co., Ltd. Probe assembly and engaged-type capacitive probe thereof
CN108593980A (en) * 2018-04-18 2018-09-28 强半导体（苏州）有限公司 A kind of manufacturing method of contact probe, measuring head and contact probe

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Application publication date: 20201113