CN111916365A - Wafer position detection method, device, equipment, system and storage medium - Google Patents
Wafer position detection method, device, equipment, system and storage medium Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The application discloses a method, a device, equipment, a system and a storage medium for detecting the position of a wafer, wherein the method comprises the following steps: acquiring a position signal, wherein the position signal is obtained by measuring the position of a target wafer on a slide holder by a PSD sensor assembly; calculating an offset distance from the position signal; and when the offset distance exceeds the distance threshold, compensating the initial position of the target wafer according to the offset distance. According to the method and the device, the position of the target wafer on the slide holder is measured through the PSD sensor component to obtain the position signal, the position detection device calculates the offset distance according to the position signal after acquiring the position signal, and when the offset distance exceeds the distance threshold, the initial position of the target wafer is compensated according to the offset distance, so that the reworking phenomenon caused by error reporting of the wafer by the photoetching device when the offset distance of the target wafer exceeds the distance threshold is avoided, and the wafer manufacturing efficiency is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a method, an apparatus, a device, a system, and a storage medium for detecting a position of a wafer in a semiconductor manufacturing process.
Background
During the photolithography process of the semiconductor wafer, the wafer needs to be placed on a wafer handling structure (wafer handling) and transferred to a wafer stage (wafer stage), and photolithography equipment performs photolithography after aligning the wafer.
The alignment process of the lithography apparatus to the wafer sequentially includes pre-alignment, coarse alignment (CWA), and fine alignment (FWA). The pre-alignment is that the photoetching equipment detects whether the alignment mark on the wafer is in the scanning range, the rough alignment is that the photoetching equipment aligns the wafer through the alignment mark on the wafer at the micron-level precision, and the fine alignment is that the photoetching equipment aligns the wafer through the alignment mark on the wafer at the nanometer-level precision.
However, during the process of transferring the wafer from the wafer transferring mechanism to the wafer stage, a certain mechanical interference may occur, which may cause the position of the wafer to deviate from the scanning range, and cause the lithography apparatus to report a wafer error (wafer reject) to the wafer and then to withdraw the wafer for reloading, thereby causing rework of the wafer and reducing the manufacturing efficiency of the wafer.
Disclosure of Invention
The application provides a method, a device, equipment, a system and a storage medium for detecting the position of a wafer, which can solve the problem that the manufacturing efficiency of the wafer is low due to the error reporting problem during rough alignment in the alignment method of the wafer provided by the related technology.
In one aspect, an embodiment of the present application provides a method for detecting a position of a wafer, where the method is applied to a process of performing photolithography on a target wafer, and includes:
acquiring a position signal, wherein the position signal is obtained by measuring the position of the target wafer on the slide holder by a Position Sensitive (PSD) sensor assembly;
calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out;
when the offset distance exceeds a distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
Optionally, a direction of a first edge of the slide holder is an X axis, a direction of a second edge of the slide holder is a Y axis, and the first edge is perpendicular to the second edge;
the calculating the offset distance from the position signal includes:
calculating a first offset distance of the target wafer in the X-axis direction;
and calculating a second offset distance of the target wafer in the Y-axis direction.
Optionally, the target wafer includes a notch, and the notch has a notch height, which is a vertical distance between a top end of the notch and a bottom edge of the notch;
the calculating a first offset distance of the target wafer in the X-axis direction includes:
calculating the first offset distance according to the position signal and the gap height;
wherein the position signal comprises a signal of each quadrant on a four-quadrant photosurface of the PSD sensor.
Optionally, the calculating the first offset distance according to the position signal and the gap height includes:
calculating the first offset distance from the position signal and the notch height by:
wherein Δ X is the first offset distance, a is the notch height, S1Is the signal of the first quadrant of the four-quadrant photosurface, S2Is the signal of the second quadrant of the four-quadrant photosurface, S3Is the signal of the third quadrant of the four-quadrant photosurface, S4C is a constant and is a signal of a fourth quadrant in the four-quadrant photosurface.
Optionally, the calculating a second offset distance of the target wafer in the Y-axis direction includes:
calculating the second offset distance according to the position signal, the gap height, the gap width and the side length;
the notch width is the width of the bottom edge, and the side length is the side length of the four-quadrant photosurface.
Optionally, the calculating the second offset distance according to the position signal, the notch height, the notch width, and the side length includes:
calculating the second offset distance according to the position signal, the notch height, the notch width and the side length by the following formula:
wherein Δ Y is the first offset distance, a is the notch height, b1Is the width of the gap, b2To said side length, S1Is the signal of the first quadrant of the four-quadrant photosurface, S2Is the signal of the second quadrant of the four-quadrant photosurface, S3Is the signal of the third quadrant of the four-quadrant photosurface, S4Is the signal of the fourth quadrant in the four-quadrant photosurface.
On the other hand, the embodiment of the application provides a position detection device, which is used for detecting the position of a target wafer in the process of photoetching the target wafer, and comprises an acquisition module and a processing module;
the acquisition module is used for acquiring a position signal, wherein the position signal is obtained by measuring the position of the target wafer on the slide holder by the PSD sensor assembly;
the processing module is used for calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out; when the offset distance exceeds a distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
In another aspect, an embodiment of the present application provides a position detection apparatus, where the apparatus includes a processor and a memory, where the memory stores at least one instruction or program, and the instruction or program is loaded and executed by the processor to implement the position detection method for a wafer according to any one of the above.
In another aspect, an embodiment of the present application provides a position detection system, including:
the PSD sensor assembly is used for measuring the position of a target wafer on the slide holder to obtain a position signal;
a position detection device for acquiring the position signal; calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out; when the offset distance exceeds a distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
In another aspect, an embodiment of the present application provides a computer-readable storage medium, where at least one instruction or program is stored in the storage medium, and the instruction or program is loaded and executed by a processor to implement the wafer position detecting method as described in any of the above.
The technical scheme at least comprises the following advantages:
the position of a target wafer on a slide holder is measured through a PSD sensor assembly to obtain a position signal, a position detection device calculates an offset distance according to the position signal after obtaining the position signal, and when the offset distance exceeds a distance threshold value, the initial position of the target wafer is compensated according to the offset distance, so that the reworking phenomenon caused by error reporting of the wafer by a photoetching device when the offset distance of the target wafer exceeds the distance threshold value is avoided, and the wafer manufacturing efficiency is improved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic top view of a position detection system provided by an exemplary embodiment of the present application;
FIG. 2 is a schematic perspective view of a position detection system provided in an exemplary embodiment of the present application
FIG. 3 is a schematic diagram of a four quadrant photosurface of a PSD sensor provided by an exemplary embodiment of the present application;
FIG. 4 is a flowchart of a method for detecting a position of a wafer according to an exemplary embodiment of the present disclosure;
FIG. 5 is a block diagram of a position detection device provided in an exemplary embodiment of the present application;
fig. 6 is a block diagram of a position detection device provided in an exemplary embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to FIG. 1, a schematic top view of a position detection system provided by an exemplary embodiment of the present application is shown; referring to fig. 2, a perspective view of a position detection system provided in an exemplary embodiment of the present application is shown. As shown in fig. 1 and fig. 2, the position detection system is used for detecting the position of a target wafer 101 during photolithography of the target wafer 101, and includes a PSD sensor assembly 110 and a position detection device 120, and a communication connection is established between the PSD sensor assembly 110 and the position detection device 120 in a wired or wireless manner. Wherein:
the PSD sensor 110 is configured to measure a position of the target wafer 101 on a stage 200 of the lithographic apparatus to obtain a position signal.
Illustratively, as shown in fig. 1 and 2, the PSD sensor assembly 110 includes a PSD sensor 111 and a light source 112, wherein the light source 112 includes a red light source or a green light source. The PSD sensor 111 is arranged on the stage 200, the light source 112 is arranged above the stage 200, light emitted by the light source 112 irradiates on a sensitive surface of the PSD sensor 111 to generate a position signal, and since the target wafer 101 shields a part of the sensitive surface, when the position of the target wafer 101 changes in the moving process, the region shielding the sensitive surface also changes, so that the position signal changes, and the measurement of the position of the target wafer 101 on the stage 200 is realized.
Referring to FIG. 3, a schematic diagram of a four quadrant photosurface of a PSD sensor provided by an exemplary embodiment of the present application is shown. Illustratively, as shown in fig. 1 and 3, the sensitive surface of the PSD sensor 111 includes a four-quadrant photosensitive surface 1110 disposed below a notch (notch)1011 of the target wafer 101, and the light emitted from the light source 112 is irradiated onto the four-quadrant photosensitive surface 1110 through the notch 1011. Wherein the side length of the four-quadrant photo-sensitive surface 1110 is b2. The area of the four-quadrant photosurface 1110 can be selected as follows: 5X 5 square millimeter (mm)2)≤b2·b2≤10×10mm2。
A position detection device 120 for acquiring position signals generated by the PSD sensor assembly 110; calculating an offset distance from the position signal; and when the offset distance exceeds the distance threshold, compensating the initial position of the target wafer according to the offset distance. The position detection apparatus 120 may be disposed in the lithographic apparatus, or may be a separate computer apparatus, or may utilize a computer apparatus provided in the lithographic apparatus, which is not limited herein.
Wherein the offset distance is used to indicate a first time t when the target wafer 101 is placed on the stage 2001And a second time t for performing a coarse alignment2The offset between the locations. The initial position is eyeThe target wafer 101 is at its starting position during the rough alignment process of photolithography. When the target wafer 101 is placed on the stage 200, the position of the target wafer 101 is usually within the scanning range of the lithography apparatus, if the target wafer 101 is shifted during the movement process, if the shift distance is within the scanning range, the rough alignment is still possible, and if the shift distance is greater than the distance threshold, the lithography apparatus may have difficulty in scanning the alignment mark on the target wafer 101, so the initial position of the rough alignment can be compensated according to the shift distance, and the lithography apparatus can perform the rough alignment on the target wafer 101.
Referring to fig. 4, a flowchart of a method for detecting a position of a wafer according to an exemplary embodiment of the present application is shown, where the method may be performed by the position detection apparatus 120 in the embodiments of fig. 1 and fig. 2, and the method may be applied to a process of performing photolithography on a target wafer 101, and the method includes:
For example, as shown in fig. 1, after generating the position signal, the PSD sensor assembly 110 sends the position signal to the position detection device 120, so that the position detection device 120 obtains the position signal; or, the position detection device 120 obtains a position signal from the PSD sensor component 110 at predetermined time intervals; alternatively, the PSD sensor assembly 110 sends a position signal to the position detection device 120 at predetermined intervals.
Illustratively, as shown in FIG. 3, the position signals include signals for each quadrant of the four-quadrant photo-sensitive surface 1110, wherein the signal for the first quadrant 1111 is S1The signal of the second quadrant 1112 is S2The signal of the third quadrant 1113 is S3The signal of the fourth quadrant 1114 is S4。
And 402, calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out.
Illustratively, as shown in FIG. 3, the direction of the first side of the stage 200 is taken as the X-axis, and the direction of the second side of the stage 200 is taken as the Y-axis, wherein the first side and the second side are perpendicular. In step 302, "calculating an offset distance from the position signal" includes, but is not limited to: calculating a first offset distance of the target wafer 101 in the X-axis direction; a second offset distance of the target wafer 101 in the Y-axis direction is calculated.
The calculation of the first offset distance and the second offset distance is described below by an exemplary embodiment:
illustratively, as shown in FIG. 3, the notch 1011 has a notch height a, which is the perpendicular distance between the top of the notch 1011 and the bottom of the notch, and the width of the bottom of the notch 1011 is the notch width b 1.
(1) According to the position signal (S)1、S2、S3、S4) And gap height a calculating a first offset distance Δ X:
illustratively, the first offset distance Δ X may be calculated by the following formula:
wherein C is a constant. The value of DeltaX can be limited to [ X ]1,x2]Can solve the above formula, e.g., x1＝(1.5a-b22) millimeters (mm), x2＝(b2/2-1.5a)mm。
(2) According to the position signal (S)1、S2、S3、S4) A gap height a and a gap width b1And length of side b2Calculating a second offset distance Δ Y:
illustratively, the second offset distance Δ Y is calculated by the following formula:
wherein the value of Δ Y can be limited to [ Y1,y2]Within a range ofSolving the above equations, e.g. y1＝-b22 mm (mm), y2＝(b2/2-a)mm。
Optionally, the gap 1011 is parabolic, and the gap height a and gap width b1Satisfies the following conditions: b1In this case, C is 8/27, and a is defined as a ≧ a1Within the value range of (A), solving the formula to obtain delta X and delta Y, a1Has a value range of [0.3,1 ]]mm (which may be 0.61mm, for example).
And 403, when the offset distance exceeds the distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
For example, if Δ X is-1 mm and Δ Y is 1mm, the initial position of the coarse alignment determined by the position detection device 120 moves from (0,0) mm to (-1, 1) mm, and the lithography device performs the coarse alignment on the target wafer 101 according to the compensated initial position determined by the detection device 120, so as to implement the compensation.
To sum up, in the embodiment of the present application, the position of the target wafer on the stage is measured by the PSD sensor component to obtain the position signal, the position detection device calculates the offset distance according to the position signal after obtaining the position signal, and when the offset distance exceeds the distance threshold, the initial position of the target wafer is compensated according to the offset distance, so that the rework phenomenon caused by the error reporting of the lithography device on the wafer when the offset distance of the target wafer exceeds the distance threshold is avoided, and the wafer manufacturing efficiency is improved.
Referring to fig. 5, a block diagram of a position detection apparatus provided in an exemplary embodiment of the present application is shown. The device is used for detecting the position of a target wafer 101 in the process of photoetching the target wafer 101, is used for executing the wafer position detection method provided by any one of the above embodiments, and comprises an acquisition module 510 and a processing module 520.
An obtaining module 510, configured to perform step 301 in the foregoing embodiments, and the step that needs to obtain signals or data in any of the foregoing embodiments.
A processing module 520, configured to perform step 302 and step 303 in the foregoing embodiments, and perform steps that need processing and calculation in any of the foregoing embodiments.
Referring to fig. 6, a block diagram of a position detection device provided by an exemplary embodiment of the present application is shown. This device may be the location detection device 120 in the embodiment of fig. 1, comprising: a processor 601 and a memory 602.
The processor 601 may be a Central Processing Unit (CPU), a Network Processor (NP), or a combination of a CPU and an NP. The processor 601 may further include a hardware chip. The hardware chip may be an application-specific integrated circuit (ASIC), a Programmable Logic Device (PLD), or a combination thereof. The PLD may be a complex 6 programmable logic device (CPLD), a field-programmable gate array (FPGA), a General Array Logic (GAL), or any combination thereof.
The memory 602 is connected to the processor 601 through a bus or other means, and at least one instruction, at least one program, a code set, or a set of instructions is stored in the memory 602, and the at least one instruction, at least one program, code set, or set of instructions is loaded and executed by the processor 601 to implement the wafer position detecting method provided in the above embodiments. The memory 602 may be a volatile memory (volatile memory), a non-volatile memory (non-volatile memory), or a combination thereof. The volatile memory may be a random-access memory (RAM), such as a Static Random Access Memory (SRAM) or a Dynamic Random Access Memory (DRAM). The nonvolatile memory may be a Read Only Memory (ROM), such as a Programmable Read Only Memory (PROM), an Erasable Programmable Read Only Memory (EPROM), and an electrically erasable programmable read-only memory (EEPROM). The nonvolatile memory may also be a flash memory (flash memory), a magnetic memory such as a magnetic tape (magnetic tape), a floppy disk (floppy disk), and a hard disk. The non-volatile memory may also be an optical disc.
The present application further provides a computer-readable storage medium, in which at least one instruction, at least one program, a code set, or an instruction set is stored, and the at least one instruction, the at least one program, the code set, or the instruction set is loaded and executed by the processor to implement the wafer position detecting method according to any of the above embodiments.
The application also provides a computer program product, which when running on a computer, causes the computer to execute the wafer position detection method provided by the above method embodiments.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (10)
1. A method for detecting the position of a wafer is applied to the process of photoetching a target wafer, and comprises the following steps:
acquiring a position signal, wherein the position signal is obtained by measuring the position of the target wafer on the slide holder by a PSD sensor assembly;
calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out;
when the offset distance exceeds a distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
2. The method of claim 1, wherein a first side of the stage is oriented along an X-axis and a second side of the stage is oriented along a Y-axis, the first side being perpendicular to the second side;
the calculating the offset distance from the position signal includes:
calculating a first offset distance of the target wafer in the X-axis direction;
and calculating a second offset distance of the target wafer in the Y-axis direction.
3. The method of claim 2, wherein the target wafer comprises a notch having a notch height, the notch height being a vertical distance between a top end of the notch and a bottom edge of the notch;
the calculating a first offset distance of the target wafer in the X-axis direction includes:
calculating the first offset distance according to the position signal and the gap height;
wherein the position signal comprises a signal of each quadrant on a four-quadrant photosurface of the PSD sensor.
4. The method of claim 3, wherein said calculating the first offset distance from the position signal and the notch height comprises:
calculating the first offset distance from the position signal and the notch height by:
wherein Δ X is the first offset distance, a is the notch height, S1Is the signal of the first quadrant of the four-quadrant photosurface, S2Is the fourth quadrant photosurfaceSignal of two quadrants, S3Is the signal of the third quadrant of the four-quadrant photosurface, S4C is a constant and is a signal of a fourth quadrant in the four-quadrant photosurface.
5. The method of claim 3 or 4, wherein the calculating the second offset distance of the target wafer in the Y-axis direction comprises:
calculating the second offset distance according to the position signal, the gap height, the gap width and the side length;
the notch width is the width of the bottom edge, and the side length is the side length of the four-quadrant photosurface.
6. The method of claim 5, wherein said calculating the second offset distance from the position signal, the notch height, notch width, and edge length comprises:
calculating the second offset distance according to the position signal, the notch height, the notch width and the side length by the following formula:
wherein Δ Y is the first offset distance, a is the notch height, b1Is the width of the gap, b2To said side length, S1Is the signal of the first quadrant of the four-quadrant photosurface, S2Is the signal of the second quadrant of the four-quadrant photosurface, S3Is the signal of the third quadrant of the four-quadrant photosurface, S4Is the signal of the fourth quadrant in the four-quadrant photosurface.
7. The position detection device is characterized by being used for detecting the position of a target wafer in the photoetching process of the target wafer, and comprising an acquisition module and a processing module;
the acquisition module is used for acquiring a position signal, wherein the position signal is obtained by measuring the position of the target wafer on the slide holder by the PSD sensor assembly;
the processing module is used for calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out; when the offset distance exceeds a distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
8. A position detection apparatus, characterized in that the apparatus comprises a processor and a memory, in which at least one instruction or program is stored, which is loaded and executed by the processor to implement the method of position detection of a wafer according to any of claims 1 to 6.
9. A position detection system, comprising:
the PSD sensor assembly is used for measuring the position of a target wafer on the slide holder to obtain a position signal;
a position detection device for acquiring the position signal; calculating an offset distance according to the position signal, wherein the offset distance is used for indicating the offset between the position of a first moment when the target wafer is placed on the slide holder and the position of a second moment when coarse alignment is carried out; when the offset distance exceeds a distance threshold, compensating the initial position of the target wafer according to the offset distance, wherein the initial position is the initial position of the target wafer in the rough alignment process of the photoetching.
10. A computer-readable storage medium having stored therein at least one instruction or program for loading and execution by a processor to implement the method of wafer position detection as claimed in any one of claims 1 to 6.
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| CN112964725A (en) * | 2021-02-02 | 2021-06-15 | 深圳中科飞测科技股份有限公司 | Detection method and device, detection equipment and storage medium |
| CN112992752A (en) * | 2021-03-04 | 2021-06-18 | 深圳源明杰科技股份有限公司 | Wafer map display method, system, equipment and storage medium |
| CN113782470A (en) * | 2021-09-10 | 2021-12-10 | 长鑫存储技术有限公司 | Method and device for adjusting wafer transfer position and semiconductor equipment |
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| CN112992752B (en) * | 2021-03-04 | 2023-01-13 | 深圳源明杰科技股份有限公司 | Wafer map display method, system, equipment and storage medium |
| CN113782470A (en) * | 2021-09-10 | 2021-12-10 | 长鑫存储技术有限公司 | Method and device for adjusting wafer transfer position and semiconductor equipment |
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