CN111908418B - High-uniformity large-mass MEMS structure and preparation method thereof - Google Patents
High-uniformity large-mass MEMS structure and preparation method thereof Download PDFInfo
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- CN111908418B CN111908418B CN202010675643.1A CN202010675643A CN111908418B CN 111908418 B CN111908418 B CN 111908418B CN 202010675643 A CN202010675643 A CN 202010675643A CN 111908418 B CN111908418 B CN 111908418B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims description 6
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000009740 moulding (composite fabrication) Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 54
- 238000007517 polishing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0075—For improving wear resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00674—Treatments for improving wear resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a high-uniformity large-mass MEMS structure and a preparation method thereof. Firstly, forming an anchor region on a substrate layer or a structural layer wafer through photoetching and etching, forming a bonding sheet in a wafer bonding mode, thinning the bonding sheet to a required thickness, and etching to form a movable mass block structure. In order to meet the requirement of processing the high uniformity of the thickness of the large-mass MEMS structure, a thinned supporting anchor area is designed at the bottom of the mass block, and the anchor area plays a role in supporting the mass block after wafer bonding. And removing the structural layer at the corresponding position during etching to release the mass block. Compared with the traditional MEMS movable mass block structure processing mode, the structure has the advantages that the support anchor area is designed at the bottom of the mass block, and the problem of uneven thickness reduction at the suspended movable mass block due to the pressure difference between the inside and outside of the wafer and the applied pressure in the thinning process is avoided.
Description
Technical Field
The invention belongs to the technical field of micro-electro-mechanical system (MEMS) manufacturing, and particularly relates to a large-mass MEMS structure and a preparation method thereof.
Background
In micro-electromechanical system (MEMS) sensors, a movable mass structure is often used to measure or convert physical quantities such as pressure, vibration, acceleration, angular velocity, etc., and the size of the movable mass has a direct influence on the detection sensitivity of the sensor.
One common process preparation method is to bond two layers of wafers in a wafer bonding mode, and form a mass block by thinning and etching the wafer on one side of the wafer. In the processing process of the large mass block structure, one problem of the method is that the lower part of the large mass block is suspended and has no structural support. In order to ensure bonding strength during wafer bonding, vacuum is often required, and in order to realize wafer level packaging or avoid particles or liquid entering the bonding sheet during the subsequent cleaning process, the periphery of the bonded wafer is often sealed. This can result in lower air pressure in the cavity below the mass on the bond pad, and in the thinning or polishing process of the structural layer, the structural layer at the mass becomes thinner, and the deformation increases, resulting in uneven thickness of the thinned layer. In addition to the vacuum applied during the bonding process, the mechanical pressure during the thinning and polishing process may also cause structural deformations at the suspended mass, resulting in non-uniform thickness.
Disclosure of Invention
The invention solves the technical problems that: the invention provides a high-uniformity large-mass MEMS structure and a preparation method thereof, which solve the problem of uneven thinning polishing thickness caused by structural deformation at a suspended movable mass block due to pressure difference between the inner and outer air pressure of a bonding wafer and pressure applied in the thinning polishing process in the processing process of the large-mass structure.
The technical scheme adopted by the invention is as follows: a high uniformity large mass MEMS structure comprises a substrate layer, a structural layer and an anchor region layer; the substrate layer wafer and the structure layer wafer are bonded by the wafer; the structural layer comprises an elastic beam, a mass block and a support hole; the anchor region layer comprises a supporting anchor region and a fixing anchor region; the mass block is connected with the elastic beam and is fixed on the substrate layer through the fixed anchor area; the plurality of support holes are distributed in the mass block, and support anchor areas are correspondingly arranged below the support holes.
The structural layer and the anchor region layer are both made of silicon materials, and the substrate layer is made of silicon, glass, quartz, ceramic or other materials; when the substrate layer is made of silicon material, the anchor region layer is formed by processing a silicon wafer of the structural layer or a silicon wafer of the substrate layer; when the substrate layer is a non-silicon material, the anchor region layer is formed by processing a silicon wafer of the structural layer.
The thickness of the substrate layer ranges from 200 to 1000 μm.
The anchor region layer is formed by dry etching or wet etching, and the thickness of the anchor region layer is 2-100 μm.
Wafer bonding modes between the substrate layer wafer and the structure layer wafer comprise silicon-silicon direct bonding, silicon-silicon oxide direct bonding, silicon-glass anodic bonding, eutectic bonding and solder bonding.
The structural layer wafer is thinned by mechanical grinding or wet etching, and the thickness range is 30-200 mu m.
The elastic beam, the mass block, the support opening and the structure layer are formed by dry etching at the positions corresponding to the anchor fixing areas.
The supporting anchor region is connected with the wafer of the structural layer before etching; after etching, a support releasing hole is formed at the corresponding position of the support anchor area, and the support anchor area is separated from the mass block.
The preparation method of the large-mass MEMS structure comprises the following steps:
Coating photoresist on the surface of a substrate layer wafer or a structural layer wafer, photoetching a supporting anchor region and a fixed anchor region pattern, etching the wafer by adopting a dry etching machine to form a supporting anchor region and a fixed anchor region structure, and removing the photoresist;
Bonding the substrate layer wafer and the structure layer wafer; the bonding mode comprises silicon-silicon direct bonding, silicon-silicon oxide direct bonding, silicon-glass anodic bonding, eutectic bonding and solder bonding;
Step three, mechanically grinding and thinning the wafer of the structural layer or carrying out wet etching and thinning by using KOH solution to the thickness of 30-200 mu m;
polishing the wafer of the structural layer by adopting chemical mechanical polishing to enable the surface of the structural layer to be smooth and flat;
and fifthly, processing the structural layer to form an elastic beam, a mass block and a support releasing hole.
The specific steps of the fifth step are as follows:
Coating photoresist on the surface of the polished wafer of the structural layer, and photoetching to form an elastic beam, a mass block, a support releasing hole and a pattern corresponding to the anchor fixing area on the wafer of the structural layer;
etching the wafer by adopting a dry etching machine to form an elastic beam, a mass block, a support opening and a structure corresponding to the anchor fixing area on the structural layer wafer;
and removing the photoresist by adopting a dry photoresist remover or a chemical solution.
Compared with the prior art, the invention has the beneficial effects that:
Compared with the traditional preparation method of the mass block structure, the preparation method has the advantages that before the mass block is etched, the supporting anchor area is arranged below the mass block, after the wafer is bonded, the supporting anchor area is bonded with the structural layer wafer, the supporting is left and right, the structural deformation of the mass block in the thinning polishing process is avoided, and the uneven thickness of the thinning polishing is avoided.
Drawings
FIG. 1 is a schematic plan view of a large mass MEMS structure;
FIG. 2 is a schematic cross-sectional view of a large mass MEMS structure;
FIGS. 3 a-3 d are process flow diagrams;
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Example 1
As shown in fig. 1 and 2, the present invention provides a high uniformity large mass MEMS structure. The structure comprises a substrate layer 1, a structural layer 2 and an anchor region layer 3; the structural layer 2 comprises elastic beams 4, a mass block 5 and a support release hole 7; the anchor region layer 3 comprises a supporting anchor region 6 and a fixing anchor region 8;
the mass 5 is connected to the spring beam 4 and is fixed to the substrate layer 1 by means of anchor areas 8. A plurality of support releasing holes 7 are designed in the mass block 5, and a support anchor area 6 is arranged below the support releasing holes 7. In the structure processing process, the supporting anchor area 6 is connected with the mass block 5 to provide support, so that uneven thickness caused by bending deformation in the mass block processing process is avoided. After the structure is machined, the supporting anchor area 6 is separated from the mass block 5.
The structural layer 2 and the anchor region layer 3 are both made of silicon materials, and the substrate layer 1 is made of silicon, glass, quartz, ceramic or other materials; when the substrate layer 1 is made of silicon material, the anchor region layer 3 is formed by processing a silicon wafer of the structural layer 2 or a silicon wafer of the substrate layer 1; when the substrate layer 1 is a non-silicon material, the anchor region layer 3 is formed by processing a silicon wafer of the structural layer 2.
The thickness of the substrate layer 1 ranges from 200 to 1000 μm. The anchor regions 8 and the support anchor regions 6 may be designed on the substrate layer 1 or the structural layer 2 wafer. The anchor region structure can be formed by dry etching or wet etching, and the height of the anchor region is 2-100 mu m. The substrate layer 1 wafer and the structural layer 2 wafer are realized by wafer bonding. The bonding modes which can be adopted are silicon-silicon direct bonding, silicon-silicon oxide direct bonding, silicon-glass anodic bonding, eutectic bonding and solder bonding. The wafer of the structural layer 2 is thinned by mechanical grinding or wet etching until the thickness is 30-200 mu m. The elastic beam 4, the mass block 5, the support opening 7 and the structure of the structure layer 2, which are arranged on the wafer and correspond to the anchor fixing area 8, are all realized by dry etching. The support anchor region 6 is positioned and connected with the wafer of the structural layer 2 before etching. And a support releasing hole 7 is formed at a corresponding position after etching, and the support anchor region 6 is separated from the mass block 5.
Preferably, after the structural layer 2 is thinned, the wafer of the structural layer 2 is polished by Chemical Mechanical Polishing (CMP) to smooth and planarize the surface of the mass 5.
A preparation method of a high-uniformity large-mass MEMS structure comprises the following steps:
Coating photoresist on the surface of a wafer of a substrate layer 1 or a wafer of a structural layer 2, photoetching patterns of a supporting anchor region 6 and a fixed anchor region 8, etching the wafer by a dry etching machine to form structures of the supporting anchor region 6 and the fixed anchor region 8, and removing the photoresist, wherein the figure 3a is shown;
step two, bonding the wafer of the substrate layer 1 and the wafer of the structural layer 2, as shown in fig. 3 b; the bonding mode comprises silicon-silicon direct bonding, silicon-silicon oxide direct bonding, silicon-glass anodic bonding, eutectic bonding and solder bonding;
step three, thinning the wafer of the structural layer 2 by mechanical grinding or wet etching with KOH solution to 30-200 μm thickness, as shown in figure 3 c;
Polishing the wafer of the structural layer 2 by adopting chemical mechanical polishing to enable the surface of the structural layer 2 to be smooth and flat;
And fifthly, as shown in fig. 3d, processing the structural layer 2 to form the elastic beam 4, the mass block 5 and the support opening 7.
The specific steps of the fifth step are as follows:
coating photoresist on the surface of the polished wafer of the structural layer 2, and photoetching to form an elastic beam 4, a mass block 5, a support opening 7 and a pattern corresponding to the anchor fixing area 8 on the wafer of the structural layer 2;
etching the wafer by adopting a dry etching machine to form an elastic beam 4, a mass block 5, a support opening 7 and a structure corresponding to the anchor fixing area 8 on the wafer of the structural layer 2;
and removing the photoresist by adopting a dry photoresist remover or a chemical solution.
The foregoing is merely illustrative of the best embodiments of the present invention, and the present invention is not limited thereto, but any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be construed as falling within the scope of the present invention.
The invention, in part not described in detail, is within the skill of those skilled in the art.
Claims (8)
1. A high uniformity bulk MEMS structure characterized by comprising a substrate layer (1), a structural layer (2) and an anchor region layer (3); the wafer bonding of the substrate layer (1) and the wafer of the structural layer (2) is realized; the structural layer (2) comprises an elastic beam (4), a mass block (5) and a support release hole (7); the anchor zone layer (3) comprises a supporting anchor zone (6) and a fixing anchor zone (8); the mass block (5) is connected with the elastic beam (4) and is fixed on the substrate layer (1) through the fixed anchor area (8); a plurality of support releasing holes (7) are distributed in the mass block (5), and support anchor areas (6) are correspondingly arranged below the support releasing holes (7);
the structural layer (2) and the anchor region layer (3) are made of silicon materials, and the substrate layer (1) is made of silicon, glass, quartz or ceramic; when the substrate layer (1) is made of silicon material, the anchor zone layer (3) is formed by processing a silicon wafer of the structural layer (2) or a silicon wafer of the substrate layer (1); when the substrate layer (1) is made of a non-silicon material, the anchor region layer (3) is formed by processing a silicon wafer of the structural layer (2);
The supporting anchor area (6) is connected with the wafer of the structural layer (2) before etching; after etching, a support opening (7) is formed at a corresponding position of the support anchor region (6), and the support anchor region (6) is separated from the mass block (5).
2. A high uniformity bulk MEMS structure according to claim 1, characterized in that the thickness of the substrate layer (1) is in the range of 200-1000 μm.
3. A high uniformity bulk MEMS structure according to claim 2, characterized in that the anchor region layer (3) is formed by dry etching, the thickness of the anchor region layer (3) being in the range of 2-100 μm.
4. A high uniformity bulk MEMS structure according to claim 3, wherein the wafer bonding means between the substrate layer (1) wafer and the structural layer (2) wafer comprises silicon-silicon direct bonding, silicon-silicon oxide direct bonding, silicon-glass anodic bonding, eutectic bonding, solder bonding.
5. A high uniformity bulk MEMS structure according to claim 4, wherein the structural layer (2) wafer is thinned by mechanical grinding or wet etching, with a thickness in the range of 30-200 μm.
6. A high uniformity bulk MEMS structure according to claim 5, wherein the spring beam (4), the mass (5), the support opening (7) and the structure of the structural layer (2) at the location corresponding to the anchor region (8) are formed by dry etching.
7. A method of fabricating a high uniformity bulk MEMS structure according to any of claims 1-6, comprising the steps of:
coating photoresist on the surface of a wafer of a substrate layer (1) or a wafer of a structural layer (2), photoetching patterns of a supporting anchor region (6) and a fixed anchor region (8), etching the wafer by adopting a dry etching machine to form structures of the supporting anchor region (6) and the fixed anchor region (8), and removing the photoresist;
Bonding the wafer of the substrate layer (1) and the wafer of the structural layer (2); the bonding mode comprises silicon-silicon direct bonding, silicon-silicon oxide direct bonding, silicon-glass anodic bonding, eutectic bonding and solder bonding;
step three, mechanically grinding and thinning the wafer of the structural layer (2) or carrying out wet etching and thinning by using KOH solution to the thickness of 30-200 mu m;
polishing the wafer of the structural layer (2) by adopting chemical mechanical polishing to enable the surface of the structural layer (2) to be smooth and flat;
and fifthly, processing the structural layer (2) to form an elastic beam (4), a mass block (5) and a support releasing hole (7).
8. The preparation method according to claim 7, wherein the specific steps of the fifth step are as follows:
Coating photoresist on the surface of the polished wafer of the structural layer (2), and photoetching to form an elastic beam (4), a mass block (5), a support opening (7) and a pattern corresponding to the anchor fixing area (8) on the wafer of the structural layer (2);
etching the wafer by adopting a dry etching machine to form an elastic beam (4), a mass block (5), a support opening (7) and a structure corresponding to the anchor fixing region (8) on the wafer of the structural layer (2);
and removing the photoresist by adopting a dry photoresist remover or a chemical solution.
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| JP2012183612A (en) * | 2011-03-07 | 2012-09-27 | Toyota Central R&D Labs Inc | Mems device |
| CN104692319A (en) * | 2015-03-16 | 2015-06-10 | 安徽北方芯动联科微系统技术有限公司 | Manufacturing method of MEMS chip insensitive to packaging stress and MEMS chip |
| CN105621348A (en) * | 2015-12-29 | 2016-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS inertial sensor device and preparation method thereof |
| CN110723712A (en) * | 2019-10-18 | 2020-01-24 | 中国航空工业集团公司西安飞行自动控制研究所 | MEMS device structure and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6872319B2 (en) * | 2002-09-30 | 2005-03-29 | Rockwell Scientific Licensing, Llc | Process for high yield fabrication of MEMS devices |
| US20180244513A1 (en) * | 2017-02-28 | 2018-08-30 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon carbide structure, device, and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012183612A (en) * | 2011-03-07 | 2012-09-27 | Toyota Central R&D Labs Inc | Mems device |
| CN104692319A (en) * | 2015-03-16 | 2015-06-10 | 安徽北方芯动联科微系统技术有限公司 | Manufacturing method of MEMS chip insensitive to packaging stress and MEMS chip |
| CN105621348A (en) * | 2015-12-29 | 2016-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS inertial sensor device and preparation method thereof |
| CN110723712A (en) * | 2019-10-18 | 2020-01-24 | 中国航空工业集团公司西安飞行自动控制研究所 | MEMS device structure and manufacturing method |
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