CN111900148A - Anti-irradiation GaN-based high electron mobility transistor and preparation method thereof - Google Patents
Anti-irradiation GaN-based high electron mobility transistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000002161 passivation Methods 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- 229910001020 Au alloy Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- -1 AlInN Inorganic materials 0.000 claims description 3
- 229910002902 BiFeO3 Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 229910004349 Ti-Al Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910004692 Ti—Al Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 2
- 238000006073 displacement reaction Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000003471 anti-radiation Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- Power Engineering (AREA)
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Abstract
The invention discloses an anti-irradiation GaN-based high electron mobility transistor and a preparation method thereof. Aiming at the problem that the performance degradation of the conventional GaN HEMT is obvious after high-energy particle irradiation, barium titanate with high displacement threshold energy and the like are introduced as a second passivation layer, so that the influence of the high-energy particles on most irradiation of a barrier layer and a channel layer can be effectively shielded, and the working reliability of the GaN HEMT device under extreme environmental conditions in the fields of aerospace, communication satellites, space exploration and the like is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to an anti-irradiation GaN-based high electron mobility transistor and a preparation method thereof.
Background
In recent years, third-generation semiconductor GaN has important application prospects in the fields of wireless communication, power systems, photoelectric detection and the like because of its excellent physical properties such as wide band gap, high breakdown field strength, high saturated electron drift velocity and the like. As a wide bandgap semiconductor, the theoretical displacement threshold energies of Ga atoms and N atoms in GaN are respectively 20.5eV and 10.8eV, which are far higher than the theoretical values of GaAs and the like, and the GaN has excellent radiation resistance.
However, due to the influence of factors such as the epitaxial quality of the current material, the technological level of the device and the like, the output characteristic of the GaN HEMT device is obviously degraded under the irradiation of high-energy particles such as gamma rays, electrons, protons and neutrons, the irradiation resistance performance is far from reaching the theoretical level, and the application of the GaN HEMT device in the fields of aerospace, communication satellites, space detection and the like under extreme environmental conditions is greatly limited.
Disclosure of Invention
The invention aims to provide an anti-irradiation GaN-based high electron mobility transistor and a preparation method thereof.
The technical scheme for realizing the purpose of the invention is as follows: the transistor structure sequentially comprises a substrate, a buffer layer, a channel layer and a barrier layer from bottom to top, wherein a source electrode, a grid electrode and a drain electrode are sequentially arranged above the barrier layer in parallel, a first passivation layer and a second passivation layer sequentially cover the barrier layer, the source electrode, the drain electrode and the grid electrode, and windows in electrical contact with the outside are formed in positions corresponding to the source electrode, the drain electrode and the grid electrode.
Further, the substrate is any one of Si, sapphire, SiC, diamond, and GaN free-standing substrates.
Further, the buffer layer is a single-layer or multi-layer structure composed of one or more of GaN, AlN and AlGaN.
Further, the channel layer is one of GaN, AlGaN, and AlN.
Further, the barrier layer is one of AlGaN, AlInN, AlN, and AlInGaN.
Furthermore, the metal of the source electrode and the metal of the drain electrode are respectively one of Ti-Al alloy, Ti-Al-Ti-TiN alloy, Ti-Al-Ti-Au alloy, Ti-Al-Ni-Au alloy and Ti-Al-Mo-Au alloy, and can be the same or different.
Further, the grid electrode is one of W, Ni, Pt, TiN, Ni-Au alloy and Pt-Al alloy.
Further, the first passivation layer is SiO2、Si3N4、Al2O3、Ga2O3、HfO2And one or more of diamond.
Further, the second passivation layer is BaTiO3、SrTiO3、PZT、HfZrOx、BiFeO3One or more of them.
A preparation method of an anti-radiation GaN-based high electron mobility transistor comprises the following steps:
and 7, defining an interconnection opening area mask above the source electrode, the drain electrode and the grid electrode, and etching the first passivation layer and the second passivation layer by an etching method to form interconnection openings.
Compared with the prior art, the invention has the following remarkable advantages:
(1) through investigation and research, BaTiO3、SrTiO3The theoretical displacement threshold energy average value of the equal materials is about 80eV, and the total dose irradiation resistance which can be born by the equal materials can reach 108rad, much higher than GaN; thus introducing BaTiO3、SrTiO3The radiation-resistant reinforcing layer can effectively reduce the radiation damage effect of high-energy particles such as gamma rays, electrons, protons and neutrons on the GaN HEMT, and greatly improve the working reliability of the device under extreme environmental conditions;
(2) the first passivation layer in the double-passivation-layer structure is an optimized passivation medium in the process of the GaN HEMT device, and can form an excellent interface structure with the barrier layer, so that the influence of the preparation process of the second passivation layer on the barrier layer interface is reduced, and the working stability of the device is improved.
Drawings
Fig. 1 is a schematic view of a structure of an anti-irradiation GaN-based high electron mobility transistor according to the present invention.
Fig. 2(a) is a schematic diagram of an epitaxial growth step of the radiation-resistant GaN-based high electron mobility transistor according to the present invention.
Fig. 2(b) is a schematic diagram of the source-drain electrode preparation step of the anti-irradiation GaN-based high electron mobility transistor provided by the present invention.
Fig. 2(c) is a schematic diagram of the gate electrode preparation step of the radiation-resistant GaN-based hemt according to the present invention.
Fig. 2(d) is a schematic diagram of a first passivation layer preparation step of the radiation-resistant GaN-based hemt according to the present invention.
Fig. 2(e) is a schematic diagram of a second passivation layer preparation step of the radiation-resistant GaN-based hemt according to the present invention.
Fig. 2(f) is a schematic diagram of a dielectric opening preparation step of the radiation-resistant GaN-based hemt according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention are further described below with reference to the accompanying drawings and examples.
Fig. 1 is a schematic structural diagram of an irradiation-resistant GaN-based high electron mobility transistor according to the present invention, which includes a substrate 1, a buffer layer 2, a channel layer 3, and a barrier layer 4 in sequence from bottom to top; a source 5, a gate 7 and a drain 6 are sequentially arranged above the barrier layer 4 from left to right in parallel, a first passivation layer 8 and a second passivation layer 9 sequentially cover the barrier layer 4, the source 5, the drain 6 and the gate 7, and windows for electrically contacting with the outside are formed in positions corresponding to the source 5, the drain 6 and the gate 7.
Referring to fig. 2(a) to fig. 2(f), the method for preparing an anti-radiation GaN-based high electron mobility transistor provided by the invention comprises the following specific steps:
1) sequentially growing a buffer layer 2, a channel layer 3 and a barrier layer 4 over a substrate 1 by an epitaxial growth method, as shown in fig. 2 (a);
wherein the substrate 1 is any one of Si, sapphire, SiC, diamond and GaN self-supporting substrate; the buffer layer 2 is a single-layer or multi-layer structure consisting of one or more of GaN, AlN and AlGaN; the channel layer 3 is one of GaN, AlGaN and AlN; the barrier layer 4 is one of AlGaN, AlInN, AlN, and AlInGaN. Epitaxial growth methods include MOCVD (metal organic chemical vapor deposition), MBE (molecular beam epitaxy), and HVPE (hydride vapor phase epitaxy).
2) Defining a mask of a source electrode 5 and a drain electrode 6 above the barrier layer 4, depositing ohmic metal by evaporation or sputtering, forming the source electrode 5 and the drain electrode 6 by a lift-off process, and forming ohmic contacts by an annealing process, as shown in fig. 2 (b); the mask is made by optical lithography or electron beam direct writing, and the source electrode 5 and the drain electrode 6 are made of one of Ti-Al alloy, Ti-Al-Ti-TiN alloy, Ti-Al-Ti-Au alloy, Ti-Al-Ni-Au alloy and Ti-Al-Mo-Au alloy, and can be the same or different.
3) Defining a mask of a gate 7 above the barrier layer 4, depositing a gate metal by evaporation or sputtering, and forming the gate 7 by a stripping process, as shown in fig. 2 (c); wherein, the metal of the grid 7 is one of W, Ni, Pt, TiN, Ni-Au alloy and Pt-Al alloy.
4) And manufacturing an active area mask above the barrier layer 4, and then performing isolation by adopting an etching or ion implantation mode to form an active area.
5) Depositing a first passivation layer 8 over the barrier layer 4, source 5, drain 6 and gate 7, fig. 2 (d); wherein the first passivation layer 8 is SiO2、Si3N4、Al2O3、Ga2O3、HfO2One or more of diamond; the growth method of the first passivation layer 8 includes LPCVD (low pressure chemical vapor deposition), PECVD (plasma enhanced chemical vapor deposition) and ALD (atomic layer epitaxy).
6) Depositing a first passivation layer 9 over the first passivation layer 8, as in fig. 2 (e); wherein the second passivation layer 9 is BaTiO3、SrTiO3、PZT(PbZr1-xTixO3)、HfZrOx、BiFeO3One or more of the materials with equal height displacement threshold energy; the growth method of the second passivation layer 9 includes magnetron sputtering, ALD (atomic layer epitaxy), and the like.
7) Defining an interconnection opening area mask above the source electrode, the drain electrode and the grid electrode, and etching the first passivation layer 8 and the second passivation layer 9 by an etching method to form interconnection openings, as shown in fig. 2 (f); the etching method comprises dry etching and wet etching.
Aiming at the problem that the performance of a device is obviously degraded after the conventional GaN HEMT is irradiated by high-energy particles, the invention introduces barium titanate (BaTiO) with high displacement threshold energy3) The second passivation layer can effectively shield the barrier layer and the channel layer of energetic particlesThe reliability and the stability of the GaN HEMT device under extreme environmental conditions in the fields of aerospace, communication satellites, space exploration and the like are improved.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the particular structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by one of ordinary skill in the art, for example:
(1) groove etching and F ion implantation can be carried out on the barrier layer according to specific requirements, or a p-GaN or p-AlGaN layer is introduced to prepare an enhancement device;
(2) field plate structures and the like can be prepared at the source electrode, the drain electrode and the grid electrode according to specific requirements so as to optimize the electric field distribution of the device;
(3) according to specific requirements, a dielectric layer can be deposited below the grid to prepare a metal-insulating layer-semiconductor (MIS) structure and the like so as to optimize the grid leakage and breakdown characteristics of the device.
It is also noted that the illustrations herein may provide examples of parameters that include particular values, but that these parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error tolerances or design constraints. Directional phrases used in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., refer only to the direction of the attached drawings and are not intended to limit the scope of the present invention. In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An anti-irradiation GaN-based high electron mobility transistor, characterized in that: the transistor structure sequentially comprises a substrate (1), a buffer layer (2), a channel layer (3) and a barrier layer (4) from bottom to top, wherein a source electrode (5), a grid electrode (7) and a drain electrode (6) are sequentially arranged above the barrier layer (4) in parallel, a first passivation layer (8) and a second passivation layer (9) sequentially cover the barrier layer (4), the source electrode (5), the drain electrode (6) and the grid electrode (7) and a window which is electrically contacted with the outside is arranged at the position corresponding to the source electrode (5), the drain electrode (6) and the grid electrode (7).
2. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the second passivation layer (9) is BaTiO3、SrTiO3、PZT(PbZr1-xTixO3)、HfZrOx、BiFeO3One or more of them.
3. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the substrate (1) is any one of Si, sapphire, SiC, diamond and GaN self-supporting substrates.
4. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the buffer layer (2) is a single-layer or multi-layer structure composed of one or more of GaN, AlN and AlGaN.
5. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the channel layer (3) is one of GaN, AlGaN and AlN.
6. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the barrier layer (4) is one of AlGaN, AlInN, AlN and AlInGaN.
7. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the metal of the source electrode (5) and the metal of the drain electrode (6) are respectively one of Ti-Al alloy, Ti-Al-Ti-TiN alloy, Ti-Al-Ti-Au alloy, Ti-Al-Ni-Au alloy and Ti-Al-Mo-Au alloy, and can be the same or different.
8. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the grid (7) is one of W, Ni, Pt, TiN, Ni-Au alloy and Pt-Al alloy.
9. The radiation-resistant GaN-based high electron mobility transistor according to claim 1, wherein: the first passivation layer (8) is SiO2、Si3N4、Al2O3、Ga2O3、HfO2And one or more of diamond.
10. A method for preparing the radiation-resistant GaN-based hemt of any one of claims 1-9, comprising the steps of:
step 1, growing a buffer layer, a channel layer and a barrier layer in sequence above a substrate by using an epitaxial growth method;
step 2, defining a mask of a source electrode and a drain electrode above the barrier layer, depositing ohmic metal in an evaporation or sputtering mode, forming the source electrode and the drain electrode by a stripping process, and forming ohmic contact by an annealing process, wherein the mask is manufactured in an optical photoetching or electron beam direct writing mode;
step 3, defining a mask of the grid above the barrier layer, depositing grid metal in an evaporation or sputtering mode, and forming the grid through a stripping process;
step 4, manufacturing an active area mask above the barrier layer, and then isolating by adopting an etching or ion implantation mode to form an active area;
step 5, depositing a first passivation layer above the barrier layer, the source electrode, the drain electrode and the grid electrode, wherein the growth method of the first passivation layer comprises low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition and atomic layer deposition;
step 6, depositing a second passivation layer above the first passivation layer, wherein the growth method of the second passivation layer comprises magnetron sputtering and atomic layer deposition;
and 7, defining an interconnection opening area mask above the source electrode, the drain electrode and the grid electrode, and etching the first passivation layer and the second passivation layer by an etching method to form interconnection openings.
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| CN112928072A (en) * | 2021-01-29 | 2021-06-08 | 重庆两江卫星移动通信有限公司 | Gallium nitride field effect transistor irradiation-resistant reinforced packaging device |
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| US20090014757A1 (en) * | 2007-06-08 | 2009-01-15 | Takulapalli Bharath R | Quantum wire sensor and methods of forming and using same |
| CN102437182A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | SiO2/SiN double layer passivation layer T-typed grid AlGaN/GaN HEMT and manufacturing method thereof |
| CN206322705U (en) * | 2016-12-28 | 2017-07-11 | 成都海威华芯科技有限公司 | A kind of GaN HEMT devices |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090014757A1 (en) * | 2007-06-08 | 2009-01-15 | Takulapalli Bharath R | Quantum wire sensor and methods of forming and using same |
| CN102437182A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | SiO2/SiN double layer passivation layer T-typed grid AlGaN/GaN HEMT and manufacturing method thereof |
| CN206322705U (en) * | 2016-12-28 | 2017-07-11 | 成都海威华芯科技有限公司 | A kind of GaN HEMT devices |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112928072A (en) * | 2021-01-29 | 2021-06-08 | 重庆两江卫星移动通信有限公司 | Gallium nitride field effect transistor irradiation-resistant reinforced packaging device |
| CN112928072B (en) * | 2021-01-29 | 2023-09-19 | 重庆两江卫星移动通信有限公司 | Packaging device for radiation-resistant reinforcement of gallium nitride field effect transistor |
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Application publication date: 20201106 |