CN111885807A - Measurement method for representing characteristics of radio frequency ion source ion beam - Google Patents
Measurement method for representing characteristics of radio frequency ion source ion beam Download PDFInfo
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- CN111885807A CN111885807A CN202010672938.3A CN202010672938A CN111885807A CN 111885807 A CN111885807 A CN 111885807A CN 202010672938 A CN202010672938 A CN 202010672938A CN 111885807 A CN111885807 A CN 111885807A
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 76
- 238000000691 measurement method Methods 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000605 extraction Methods 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000002474 experimental method Methods 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
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- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention relates to a measuring method for characterizing the ion beam characteristics of a radio frequency ion source, which comprises the steps of S1, fixing a silicon wafer in a vacuum chamber, and vertically projecting a stabilized ion beam on the silicon wafer, namely alpha is 0; s2, adjusting the distance WD between the ion beam extraction end face and the silicon wafer to adjust the beam spot formed on the silicon wafer, and analyzing the ion beam form into a focused ion beam or a parallel ion beam according to the beam spot; s3, acquiring a beam spot shape PV value formed by projecting ion beams on a silicon wafer, and analyzing and calculating the diameter of a beam spot by using Metropro software; and S4, measuring the major axis a and the minor axis b of the beam spot, and determining the shape of the beam spot to be a circular light spot or an elliptical light spot according to the ratio a/b of the two. The invention can intuitively reflect the ion beam form, the beam diameter size and the beam spot shape, is convenient for accurately analyzing the ion beam characteristics and provides a guidance basis for later-stage process experiments.
Description
Technical Field
The invention relates to the technical field of ion beam sputtering coating and ultra-precision polishing, in particular to a measuring method for representing the characteristics of a radio frequency ion source ion beam.
Background
The radio frequency ion source has the advantages of simple structure and electrodeless discharge, and a film layer plated by adopting ion beam sputtering coating has the advantages of less absorption, small drift, high efficiency and good compactness. Rf ion sources are also used in ion beam polishing in the field of precision manufacturing, which is generally used for final processing of ultra-precision optical elements, a polishing technique in which the removal accuracy reaches the atomic level. In the process, ion beams with certain energy and space distribution bombard the surface of the optical element, the surface material of the optical element is removed by utilizing the physical sputtering effect generated during bombardment, the purpose of correcting surface shape errors is achieved, and the processing precision reaches the nanometer level. Lower energy ion beams are widely used in industrial processes such as ion thinning, ion polishing, ion beam punching, ion beam etching, ion beam sputtering of metal films, and the like.
High performance ion beam current is indispensable for both optical film preparation and nanoscale ion beam etching and polishing. In the research of ion beam ultra-precision machining, an ion source plays a very important role. The ion source is a device for generating ion beam current and is a key component in ion beam equipment.
The Radio Frequency (RF) ion source generates plasma by magnetic induction, so that electrodeless discharge is realized, no filament is used as a cathode in a discharge chamber, the filament-free plasma source can work in reaction gas for a long time, and pollution to the ion beam is greatly reduced. Because the plasma generated by the radio frequency induction only has single-charge ions and almost no double-charge ions, the pollution caused by screen grid sputtering is particularly reduced, and meanwhile, the uniformity of the ion beam is also increased. When the ion source works, gas passes through the quartz discharge chamber, radio frequency discharge is carried out through certain radio frequency power, and ionized gas generates plasma. Charged particles are accelerated through an electrostatic field, the voltage of an ion beam is controlled, the power of a discharge chamber is increased, the concentration of discharge plasma is improved, and the ion beam with certain energy is formed through the focusing acceleration of an ion tri-grid optical system.
The ion beam generated by the radio frequency ion source is excited in the vacuum chamber, the characteristics of the ion beam are known before sputtering coating or ion beam polishing, the selection of the later-stage proper experimental parameters is very important, and the color of the excited ion beam is easy to observe and is usually a purple light beam. The Faraday cup can detect the beam current density of the ion beam, but the characteristics of the ion beam, such as the beam diameter, the ion beam form, such as a focused ion beam or a parallel ion beam, and the shape of the beam spot are difficult to directly detect, and the characteristics of the ion beam directly influence the quality of sputtering coating or the etching and polishing effect of the ion beam, so that the accurate analysis of the characteristics of the ion beam provides a guidance basis for later-stage process experiments.
Disclosure of Invention
In view of the above problems, the present invention provides a measurement method for characterizing the ion beam of an rf ion source, which is simple and easy to operate, and can intuitively reflect the ion beam shape, the beam diameter size, and the beam spot shape.
In order to achieve the purpose, the technical scheme of the invention is as follows: a measurement method for characterizing the characteristics of an ion beam of an RF ion source, comprising: the method comprises the following steps of,
s1, fixing the silicon wafer in the vacuum chamber and vertically projecting the stabilized ion beam on the silicon wafer, wherein alpha is 0;
s2, adjusting the distance WD between the ion beam extraction end face and the silicon wafer to adjust the beam spot formed on the silicon wafer, and analyzing the ion beam form into a focused ion beam or a parallel ion beam according to the beam spot;
s3, acquiring a beam spot shape PV value formed by projecting ion beams on a silicon wafer, and analyzing and calculating the diameter of a beam spot by using Metropro software;
and S4, measuring the major axis a and the minor axis b of the beam spot, and determining the shape of the beam spot to be a circular light spot or an elliptical light spot according to the ratio a/b of the two.
Furthermore, the silicon wafer is plated with a silicon oxide film.
Further, the thickness of the silicon oxide film is 200-800 μm.
Furthermore, the size of the silicon wafer is circular or square, when the silicon wafer is circular, the diameter range of the circular silicon wafer is 50-500mm, and when the silicon wafer is square, the side length of the square silicon wafer is 50-400 mm.
Further, the distance WD is in the range of 10-60 mm.
Further, the silicon wafer is fixed by a clamp or a flat-plate base plate.
Compared with the prior art, the invention has the advantages that:
the method can intuitively reflect the ion beam form, the beam diameter size and the beam spot shape, is convenient for accurately analyzing the ion beam characteristics, and provides guidance basis for later-stage process experiments.
Drawings
FIG. 1 is a schematic diagram of a structure of a beam spot obtained according to the present invention.
Fig. 2 is a schematic diagram of a circular beam spot structure.
FIG. 3 is a schematic diagram of an elliptical beam spot configuration.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
As shown in fig. 1 to 3, the structural schematic diagram of the measurement method for characterizing the characteristics of the rf ion source ion beam according to the present application is shown, in the measurement process, the equipment such as the power supply of the ion beam polishing system, the water cooling device, the working argon gas, etc. is needed to be opened first, then the silicon wafer is placed, the silicon wafer is fixed by using a suitable fixture, the test environment is vacuumized until the pressure of the vacuum chamber reaches 5.0 × 10-3Pa or above.
Then, starting the ion source, starting 'Beam + Acc' of the ion source firstly, and waiting for the ion source to enter a stable working state, wherein the process takes about 0.5-1 h; after the ion source is stabilized, performing Faraday scanning, then starting a neutralization electrode, after the ion source is stabilized again, enabling the ion beam to be vertically projected on a silicon wafer, namely alpha is 0, adjusting the distance WD between the ion beam extraction end face and the silicon wafer to adjust beam spots formed on the silicon wafer, and analyzing the ion beam form into a focused ion beam or a parallel ion beam according to the beam spots; the distance WD ranges from 10 mm to 60 mm. It is apparent that when the formed beam spot is a spot shape, it means that the ion beam is a focused ion beam, and when the formed beam spot is a non-spot shape, it means that the ion beam is a parallel ion beam.
In order to obtain the diameter of the beam spot, the invention firstly obtains the PV value of the beam spot shape formed by projecting the ion beam on a silicon wafer, and then the diameter of the beam spot is analyzed and calculated by using Metropro software; when the shape of the beam spot is determined, the shape of the beam spot is determined to be a circular light spot or an elliptical light spot by measuring a major semi-axis a and a minor semi-axis b of the beam spot and according to the ratio a/b of the two.
Specifically, the beam spot is a circular beam spot when a/b is 1, and is a non-circular beam spot when a/b is not equal to 1, and is an elliptical beam spot when a/b is 1.98:1 in the present application, as shown in fig. 2 and 3.
Meanwhile, by setting the coordinates (-R/3, + R/3) of the position region by using the optical element of the grid mesh having a representative diameter of R, the ion beam is reciprocated 25 times on the surface thereof within this range, and the effective beam diameter and the affected area thereof are obtained after the end of the processing, which will not be described in detail herein.
In the present application, the silicon wafer is a silicon wafer plated with a silicon oxide film, and the thickness of the silicon oxide film is 200-. The silicon wafer can be round or square, when the silicon wafer is round, the diameter range of the round is 50-500mm, when the silicon wafer is square, the side length of the square is 50-400mm, and the silicon wafer is fixed by a clamp or a flat plate base plate.
The method can intuitively reflect the ion beam form, the beam diameter size and the beam spot shape, is convenient for accurately analyzing the ion beam characteristics, and provides guidance basis for later-stage process experiments.
While embodiments of the invention have been shown and described, it will be understood by those skilled in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (6)
1. A measurement method for characterizing the characteristics of an ion beam of an RF ion source, comprising: the method comprises the following steps of,
s1, fixing the silicon wafer in the vacuum chamber and vertically projecting the stabilized ion beam on the silicon wafer, wherein alpha is 0;
s2, adjusting the distance WD between the ion beam extraction end face and the silicon wafer to adjust the beam spot formed on the silicon wafer, and analyzing the ion beam form into a focused ion beam or a parallel ion beam according to the beam spot;
s3, acquiring a beam spot shape PV value formed by projecting ion beams on a silicon wafer, and analyzing and calculating the diameter of a beam spot by using Metropro software;
and S4, measuring the major axis a and the minor axis b of the beam spot, and determining the shape of the beam spot to be a circular light spot or an elliptical light spot according to the ratio a/b of the two.
2. The method of claim 1, wherein the step of measuring the characteristic of the ion beam comprises:
the silicon chip is a silicon chip plated with a silicon oxide film.
3. The method of claim 2, wherein the step of measuring the characteristic of the ion beam comprises:
the thickness of the silicon oxide film is 200-800 μm.
4. The method of claim 1, wherein the step of measuring the characteristic of the ion beam comprises:
the silicon wafer is round or square, when the silicon wafer is round, the diameter range of the round is 50-500mm, and when the silicon wafer is square, the side length of the square is 50-400 mm.
5. The method of claim 1, wherein the step of measuring the characteristic of the ion beam comprises:
the distance WD ranges from 10 mm to 60 mm.
6. The method of claim 1, wherein the step of measuring the characteristic of the ion beam comprises:
the silicon chip is fixed by a clamp or a flat plate base plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010672938.3A CN111885807A (en) | 2020-07-14 | 2020-07-14 | Measurement method for representing characteristics of radio frequency ion source ion beam |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010672938.3A CN111885807A (en) | 2020-07-14 | 2020-07-14 | Measurement method for representing characteristics of radio frequency ion source ion beam |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0594800A (en) * | 1991-10-03 | 1993-04-16 | Nissin Electric Co Ltd | Method for recognizing ion beam spot shape |
| CN104965217A (en) * | 2015-06-26 | 2015-10-07 | 中国工程物理研究院核物理与化学研究所 | Measuring device and method for pulsed ion beam cross section image |
| CN110031887A (en) * | 2019-04-30 | 2019-07-19 | 清华大学 | Beam spot caliberating device and method |
| CN110383415A (en) * | 2017-02-07 | 2019-10-25 | Asml荷兰有限公司 | Method and apparatus for detection of charged particles |
| CN110398768A (en) * | 2019-07-15 | 2019-11-01 | 华中科技大学 | A kind of beam spot dynamic monitoring method and system based on pixel ionisation chamber |
| CN110782418A (en) * | 2019-10-25 | 2020-02-11 | 上海精测半导体技术有限公司 | Scanning planning method, device and equipment for charged particle beam equipment |
| CN111308542A (en) * | 2020-02-28 | 2020-06-19 | 中国科学院电工研究所 | Measuring device and measuring method for beam spot performance of electron gun |
-
2020
- 2020-07-14 CN CN202010672938.3A patent/CN111885807A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0594800A (en) * | 1991-10-03 | 1993-04-16 | Nissin Electric Co Ltd | Method for recognizing ion beam spot shape |
| CN104965217A (en) * | 2015-06-26 | 2015-10-07 | 中国工程物理研究院核物理与化学研究所 | Measuring device and method for pulsed ion beam cross section image |
| CN110383415A (en) * | 2017-02-07 | 2019-10-25 | Asml荷兰有限公司 | Method and apparatus for detection of charged particles |
| CN110031887A (en) * | 2019-04-30 | 2019-07-19 | 清华大学 | Beam spot caliberating device and method |
| CN110398768A (en) * | 2019-07-15 | 2019-11-01 | 华中科技大学 | A kind of beam spot dynamic monitoring method and system based on pixel ionisation chamber |
| CN110782418A (en) * | 2019-10-25 | 2020-02-11 | 上海精测半导体技术有限公司 | Scanning planning method, device and equipment for charged particle beam equipment |
| CN111308542A (en) * | 2020-02-28 | 2020-06-19 | 中国科学院电工研究所 | Measuring device and measuring method for beam spot performance of electron gun |
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