CN111879785B - Method for detecting abnormal film thickness - Google Patents
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- CN111879785B CN111879785B CN202010757295.2A CN202010757295A CN111879785B CN 111879785 B CN111879785 B CN 111879785B CN 202010757295 A CN202010757295 A CN 202010757295A CN 111879785 B CN111879785 B CN 111879785B
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
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Abstract
The application discloses a detection method for abnormal conditions of film thickness, and relates to the field of semiconductor manufacturing. The method comprises the steps of carrying out bright field scanning on the surface of a wafer to obtain the morphology information of a die surface film layer on the wafer, wherein the morphology information comprises a brightness difference value and a roughness difference value; for each die of the obtained morphology information, detecting whether the morphology information corresponding to each film point on the die meets a preset condition, wherein the preset condition is that the brightness difference value is smaller than a first preset value and the roughness difference value is smaller than a second preset value; if the morphology information corresponding to the film points is detected to meet the preset condition, determining that the film thickness of the film points is not abnormal; if the morphology information corresponding to the film points is detected to not meet the preset condition, determining that the film thickness of the film points is abnormal; the problem that the current film thickness detection is limited and the film thickness condition is difficult to detect in real time is solved; the film thickness is detected in time after the film layer is manufactured, and the effect of detecting the abnormal film thickness in the current station is achieved.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a method for detecting abnormal conditions of film thickness.
Background
In the integrated circuit manufacturing process, the method comprises the step of growing different film layers on the surface of a wafer. The thin film may be formed by a deposition process, a thermal growth process, or the like. The quality of the thin film is related to the performance of the semiconductor device, and the abnormality of the thin film can cause the abnormality of the later yield.
At present, a film thickness machine and a defect detection machine cannot measure the film thickness of a thin film in a certain special area on a wafer, and finally, the abnormality of the film thickness can be found only when a chip probe is tested. At this time, it is found that the film thickness is abnormal, so that effective improvement measures cannot be performed, and the problem of unqualified wafer yield in a large batch is easily caused.
Disclosure of Invention
In order to solve the problems in the related art, the present application provides a method for detecting abnormal conditions of film thickness. The technical scheme comprises the following steps:
in one aspect, an embodiment of the present application provides a method for detecting an abnormal film thickness condition, where the method includes:
carrying out bright field scanning on the surface of the wafer to obtain the morphology information of die surface film layers on the wafer, wherein the morphology information comprises a brightness difference value and a roughness difference value; a plurality of die are distributed on the wafer, and any one film point on each die corresponds to one coordinate information;
for each die of the obtained morphology information, detecting whether the morphology information corresponding to each film point on the die meets a preset condition, wherein the preset condition is that the brightness difference value is smaller than a first preset value and the roughness difference value is smaller than a second preset value;
if the morphology information corresponding to the film points is detected to meet the preset condition, determining that the film thickness of the film points is not abnormal;
if the morphology information corresponding to the film points is detected to not meet the preset condition, determining that the film thickness of the film points is abnormal.
Optionally, performing bright field scanning on the surface of the wafer to obtain morphology information of a die surface film layer on the wafer, including:
carrying out bright field scanning on the surface of the wafer for a plurality of times;
the method comprises the steps of obtaining the morphology information of a die surface film layer for a plurality of times, and obtaining the morphology information of each film point on n die each time;
wherein, coordinate information corresponding to die of the morphology information obtained at any two times is different; n die are positioned in the same column or the same row on the wafer, m die are arranged between any two adjacent die at intervals, n is an integer greater than or equal to 3, and m is an integer greater than or equal to 1.
Alternatively, n=3, m=1.
Optionally, for each die from which the morphology information is obtained, detecting whether the morphology information corresponding to each film point on the die meets a predetermined condition includes:
making an anomaly analysis chart according to the obtained morphology information, wherein each film point of the morphology information corresponds to one point in the anomaly analysis chart, and the ordinate and the abscissa of the anomaly analysis chart are a brightness difference value and a roughness difference value;
determining an abnormal-free region and an abnormal region in the abnormal analysis chart, wherein the brightness difference value corresponding to the abnormal-free region is smaller than a first preset value, and the roughness difference value corresponding to the abnormal-free region is smaller than a second preset value;
detecting the areas of the points in the abnormality analysis map.
Optionally, the method comprises:
if the point is detected to be positioned in the abnormal-free area, determining that the film thickness of the film point corresponding to the point is abnormal;
if the detected point is located in the abnormal area, determining that the film thickness of the film point corresponding to the point is abnormal.
Optionally, the illumination conditions are the same for each bright field scan.
Optionally, the method further comprises:
marking film points corresponding to the morphology information which does not meet the preset conditions as defect film points, and acquiring coordinate information of the defect film points;
marking the defect film points in the wafer map according to the coordinate information of the defect film points, wherein the wafer map comprises a plurality of die patterns, and the die patterns are in one-to-one correspondence with die on the wafer.
Optionally, the method further comprises:
counting the density of defective film points;
detecting whether the density of the defect film points exceeds a preset density;
if the density of the defect film points exceeds the preset density, determining that the wafer is unqualified;
and if the density of the defect film points is detected not to exceed the preset density, determining that the wafer is qualified.
The technical scheme of the application at least comprises the following advantages:
the method comprises the steps of carrying out bright field scanning on the surface of a wafer to obtain a brightness difference value and a roughness difference value of a die surface film layer on the wafer, and detecting whether the morphology information corresponding to each film point on the die meets a preset condition or not according to each die of the morphology information, wherein the film thickness of the film point of which the morphology information meets the preset condition is not abnormal, and the film thickness of the film point of which the morphology information does not meet the preset condition is abnormal; the problem that a common machine is more limited in detecting the film thickness and is difficult to detect the film thickness in real time is solved; the method achieves the effect of timely detecting the film thickness after the wafer surface film layer is manufactured, and realizing the on-site detection of the abnormal film thickness.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for detecting abnormal film thickness according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a wafer surface die distribution according to an embodiment of the present disclosure;
FIG. 3 is a flowchart of a method for detecting abnormal film thickness according to another embodiment of the present application;
FIG. 4 is a schematic diagram of an implementation of a method for detecting abnormal film thickness provided in an embodiment of the present application;
FIG. 5 is an anomaly analysis graph provided by an embodiment of the present application;
fig. 6 is a diagram of a marked wafer according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made apparent and complete in conjunction with the accompanying drawings, in which embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In addition, the technical features described below in the different embodiments of the present application may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a flowchart of a method for detecting abnormal film thickness provided in an embodiment of the present application is shown, where the method at least includes the following steps:
and step 101, carrying out bright field scanning on the surface of the wafer to obtain the morphology information of the die surface film layer on the wafer, wherein the morphology information comprises a brightness difference value and a roughness difference value.
As shown in fig. 2, a plurality of die22 are distributed on a wafer 21, and the die22 are sequentially arranged on the wafer, and each die includes a chip.
One die may be divided into a plurality of points, and any one point on each die on the wafer 21 corresponds to one coordinate information, and one die corresponds to a plurality of coordinate information.
The die distribution condition on each wafer corresponds to a wafer map, die patterns on the wafer map are in one-to-one correspondence with die on the wafer, die patterns on the wafer map also have coordinate information, and the coordinate information corresponding to die on the wafer is the same as the coordinate information corresponding to die patterns on the wafer map, namely, each point on the wafer has a one-to-one correspondence position on the wafer map.
The surface of the wafer is provided with a film, the film layer on the surface of the wafer is divided according to die, each die is provided with a plurality of film points, and any one film point on each die corresponds to one piece of coordinate information.
Optionally, the automatic optical scanner is used for carrying out bright field scanning on the surface of the wafer to obtain the morphology information of the die surface film layer on the wafer.
For die of the obtained morphology information, any one film point on each die corresponds to a group of morphology information, and the morphology information comprises a brightness difference value and a roughness difference value.
Under the same conditions, if the thickness of the film is not abnormal, the roughness and the brightness of the film point tend to be consistent, if the thickness of the film is abnormal, the roughness and the brightness of the film point are unstable, and the brightness and the roughness of the film point are greatly different.
Optionally, by bright field scanning, all die on the wafer acquire the morphology information, or part of die on the wafer acquire the morphology information; when part of die on the wafer acquires the morphology information, the die acquiring the morphology information is preselected.
The predetermined condition is that the shading difference value is smaller than a first predetermined value and the roughness difference value is smaller than a second predetermined value.
The first predetermined value and the second predetermined value are determined according to actual conditions. The illumination conditions during bright field scanning are different, and the first preset value and the second preset value may be changed.
The first predetermined value and the second predetermined value are preset.
The smaller the shading difference value and the roughness difference value, the more uniform the film layer, and the less possibility of occurrence of abnormality in film thickness.
Aiming at each film point of the acquired morphology information:
if the morphology information corresponding to the film point is detected to meet the preset condition, determining that the film thickness of the film point is not abnormal;
if the morphology information corresponding to the film point is detected to not meet the preset condition, determining that the film thickness of the film point is abnormal.
The failure to meet the predetermined condition means that: the shading difference value is larger than a first preset value, and the roughness difference value is larger than a second preset value; or, the brightness difference value is larger than a first preset value, and the roughness difference value is smaller than a second preset value; or, the shading difference value is smaller than a first predetermined value, and the roughness difference value is larger than a second predetermined value.
In summary, according to the method for detecting abnormal film thickness conditions provided by the embodiment of the present application, bright field scanning is performed on the surface of a wafer to obtain a brightness difference value and a roughness difference value of a die surface film layer on the wafer, and for each die for which morphology information is obtained, whether morphology information corresponding to each film point on the die meets a predetermined condition is detected, film thickness of the film point for which the morphology information meets the predetermined condition is not abnormal, and film thickness of the film point for which the morphology information does not meet the predetermined condition is abnormal; the problem that a common machine is more limited in detecting the film thickness and is difficult to detect the film thickness in real time is solved; the method achieves the effect of timely detecting the film thickness after the wafer surface film layer is manufactured, and realizing the on-site detection of the abnormal film thickness.
Since the film thickness is detected by dividing the area by die, a specific area on the wafer can be detected, such as a smaller area. The automatic optical scanning machine is used for scanning the wafer, so that the detection of the film thickness condition of any area on the wafer can be realized.
Referring to fig. 3, a flowchart of a method for detecting abnormal film thickness according to another embodiment of the present application is shown, where the method at least includes the following steps:
in step 301, a plurality of bright field scans are performed on the wafer surface.
Alternatively, the wafer surface is scanned several times with an automated optical scanner, each time scanning a row or column of die on the wafer, or each time scanning several die in a row/column die.
Coordinate information corresponding to die of the morphology information obtained at any two times is different. The die is not repeatedly scanned, and the morphology information is not repeatedly acquired for the die.
The topography information includes shading differential values and roughness differential values.
A plurality of die are distributed on the wafer, and each film point on each die corresponds to one piece of coordinate information.
The method is characterized in that morphology information acquisition processing can be carried out after each bright field scanning; or, the die may be subjected to the shape information acquiring process after the bright field scanning of the wafer is completed.
Optionally, a part of the die scanned by the bright field is obtained the morphology information, or all the die scanned by the bright field is obtained the morphology information.
The n die of the morphology information obtained each time are positioned in the same column or the same row on the wafer, and m die are arranged between any two adjacent die in the n die of the morphology information obtained each time.
n is an integer of 3 or more, and m is an integer of 1 or more.
When the morphology information is acquired, at least 3 die are selected each time, and film thickness condition comparison of die surface film layers can be completed, so that brightness difference values and roughness difference values of all film points on die are obtained.
Because the difference of the surface film layers of the adjacent die is small, when the morphology information acquisition processing is carried out, the capability of analyzing the film thickness abnormality can be improved by spacing at least one die between any two adjacent die.
In one example, m=1, n=3. The method comprises the steps of obtaining the morphology information of each membrane point on 3 die at a time, and spacing 1 die between any two adjacent die in the 3 die with the obtained morphology information.
As shown in fig. 4, a plurality of die21 are distributed on the wafer 22, and die41, die42, die43 are grabbed when the morphology information is acquired and processed for a certain time, 1 die is arranged between die41 and die42, and one die is arranged between die42 and die 43; die41, die42, die43 are located in the same row.
The die on the wafer is scanned entirely or part of die on the wafer is scanned, and the die to be scanned can be determined according to practical situations.
And 303, making an anomaly analysis graph according to the obtained morphology information, wherein each film point of the morphology information corresponds to one point on the anomaly analysis graph, and the ordinate and the abscissa of the anomaly analysis graph are a brightness difference value and a roughness difference value.
The abscissa of the anomaly analysis graph is a brightness difference value, and the ordinate is a roughness difference value; alternatively, the abscissa of the anomaly analysis map is the roughness difference value, and the ordinate is the shading difference value.
In one example, as shown in fig. 5, the abscissa of the anomaly analysis map is a roughness difference value, and the ordinate is a shading difference value, and each point 51 in the anomaly analysis map corresponds to a film point.
Each film point in the anomaly analysis graph has coordinate information, and the positions of the film point wafer and the wafer graph can be positioned according to the coordinate information.
Taking fig. 5 as an example, the smaller the roughness difference value and the shading difference value, the more uniform the film layer of the film point, and the non-abnormal region S1 and the abnormal regions S2 and S3 are determined in the abnormality analysis chart.
In the S1 area, the brightness difference value is smaller than a first preset value, and the roughness difference value is smaller than a second preset value; in the S2 area, the brightness difference value is larger than a first preset value, and the roughness difference value is smaller than a second preset value; in the S3 region, the roughness difference value is larger than the second predetermined value, and the S3 region is a region other than the S1 region and the S2 region in the abnormality analysis map. That is, when the roughness difference value in the morphology information is greater than a second predetermined value, or the brightness difference value in the morphology information is greater than a first predetermined value, the film layer of the film point corresponding to the morphology information is abnormal.
In step 305, the areas of the points in the abnormality analysis map are detected.
If the point is detected to be positioned in the abnormal-free area, determining that the film thickness of the film point corresponding to the point is abnormal.
If the point is detected to be located in the abnormal area, determining that the film thickness of the film point corresponding to the point is abnormal.
Referring to fig. 5, there is no abnormality in film thickness at the film points corresponding to the points located in the region S1, and abnormality occurs in film thickness at the film points corresponding to the points located in the regions S2 and S2.
And 306, marking the film points corresponding to the morphology information which does not meet the preset conditions as defect film points, and acquiring coordinate information of the defect film points.
The failure to meet the predetermined condition means that: the shading difference value is larger than a first preset value, and the roughness difference value is larger than a second preset value; or, the brightness difference value is larger than a first preset value, and the roughness difference value is smaller than a second preset value; or, the shading difference value is smaller than a first predetermined value, and the roughness difference value is larger than a second predetermined value.
The morphology condition of the points located in the abnormal region in the abnormal analysis chart does not meet the preset condition, and the film points corresponding to the points located in the abnormal region are marked as defect film points.
Taking fig. 5 as an example, film points corresponding to points located in the region S2 and the region S3 are both defective film points.
And step 307, marking the defect film points in the wafer map according to the coordinate information of the defect film points.
The wafer map comprises a plurality of die patterns, and the die patterns in the wafer map are in one-to-one correspondence with die on the wafer.
Because the coordinate information of the film point pattern in the wafer map is consistent with the coordinate information of the film point on the wafer, the film point pattern corresponding to the defect film point can be marked in the wafer map according to the coordinate information of the film point.
In one example, as shown in fig. 6, the wafer map marked according to the coordinate information of the defective film points corresponds to the defective film points on the wafer map 61 by the darkened film point pattern 62.
And visually observing the abnormal condition of the film thickness on the wafer according to the marked wafer graph.
And performing interval scanning on die on the wafer to obtain a brightness difference value and a roughness difference value of die surface film thickness on the wafer, and establishing an analysis model according to the brightness difference value and the roughness difference value, wherein the analysis model can be found when the die surface film thickness is abnormal, so that the detection effect of the film thickness abnormality is improved.
When the station finds that the film thickness is abnormal, control measures can be timely taken, and the risk of low yield of the wafer is reduced.
In an alternative embodiment based on the embodiment shown in fig. 1 or 3, the illumination conditions are the same for each bright field scan.
In an alternative embodiment based on the embodiment shown in fig. 1 or 3, the method further comprises the steps of:
and step 41, counting the density of defective film points.
In step 42, the inspection determines whether the density of defective film dots exceeds a predetermined density.
The predetermined density is predetermined according to the actual situation.
And if the density of the detected defect film points exceeds the preset density, determining that the wafer is unqualified.
And if the density of the defect film points is detected not to exceed the preset density, determining that the wafer is qualified.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While nevertheless, obvious variations or modifications may be made to the embodiments described herein without departing from the scope of the invention.
Claims (7)
1. A method for detecting abnormal conditions of film thickness, the method comprising:
carrying out bright field scanning on the surface of the wafer for a plurality of times;
obtaining the morphology information of the die surface film layer for a plurality of times, and obtaining the morphology information of each film point on n die each time, wherein the morphology information comprises a brightness difference value and a roughness difference value; a plurality of die are distributed on the wafer, and any one film point on each die corresponds to one coordinate information; wherein, coordinate information corresponding to die of the morphology information obtained at any two times is different; the n die are positioned in the same column or the same row on the wafer, m die are arranged between any two adjacent die at intervals, n is an integer greater than or equal to 3, and m is an integer greater than or equal to 1;
for each die of the obtained morphology information, detecting whether the morphology information corresponding to each film point on the die meets a preset condition, wherein the preset condition is that the brightness difference value is smaller than a first preset value and the roughness difference value is smaller than a second preset value;
if the morphology information corresponding to the film points is detected to meet the preset conditions, determining that the film thickness of the film points is not abnormal;
if the morphology information corresponding to the film points is detected not to meet the preset condition, determining that the film thickness of the film points is abnormal.
2. The method of claim 1, wherein n = 3 and m = 1.
3. The method according to claim 1, wherein the detecting whether the morphology information corresponding to each film point on the die satisfies the predetermined condition for each die from which the morphology information is obtained comprises:
an abnormal analysis chart is manufactured according to the obtained morphology information, each film point of the morphology information is obtained to correspond to one point in the abnormal analysis chart, and the ordinate and the abscissa of the abnormal analysis chart are a brightness difference value and a roughness difference value;
determining an abnormal-free region and an abnormal region in the abnormal analysis chart, wherein the brightness difference value corresponding to the abnormal-free region is smaller than a first preset value, and the roughness difference value corresponding to the abnormal-free region is smaller than a second preset value;
detecting the areas of the points in the abnormality analysis chart.
4. A method according to claim 3, characterized in that the method comprises:
if the point is detected to be positioned in the abnormal-free area, determining that the film thickness of the film point corresponding to the point is abnormal;
if the point is detected to be positioned in the abnormal area, determining that the film thickness of the film point corresponding to the point is abnormal.
5. The method of claim 1, wherein the illumination conditions are the same for each bright field scan.
6. The method according to claim 1, wherein the method further comprises:
marking film points corresponding to the morphology information which does not meet the preset conditions as defect film points, and acquiring coordinate information of the defect film points;
marking the defect film points in a wafer map according to the coordinate information of the defect film points, wherein the wafer map comprises a plurality of die patterns, and the die patterns are in one-to-one correspondence with die on the wafer.
7. The method of claim 6, wherein the method further comprises:
counting the density of defective film points;
detecting whether the density of the defect film points exceeds a preset density;
if the density of the defect film points exceeds the preset density, determining that the wafer is unqualified; and if the density of the defect film points is detected not to exceed the preset density, determining that the wafer is qualified.
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