CN111864357A - Low-profile microstrip antenna - Google Patents

Low-profile microstrip antenna Download PDF

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Publication number
CN111864357A
CN111864357A CN202010843696.XA CN202010843696A CN111864357A CN 111864357 A CN111864357 A CN 111864357A CN 202010843696 A CN202010843696 A CN 202010843696A CN 111864357 A CN111864357 A CN 111864357A
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CN
China
Prior art keywords
metal
layer
radiation
microstrip
semi
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Pending
Application number
CN202010843696.XA
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Chinese (zh)
Inventor
宋长宏
梅丽荣
牛茂刚
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CETC 54 Research Institute
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CETC 54 Research Institute
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Priority to CN202010843696.XA priority Critical patent/CN111864357A/en
Publication of CN111864357A publication Critical patent/CN111864357A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna

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Abstract

The invention discloses a low-profile microstrip antenna, and belongs to the technical field of antennas. The antenna comprises a micro-strip patch layer, a coupling gap layer and a back cavity layer, wherein the micro-strip patch layer and the coupling gap layer adopt a multi-layer printed board processing technology, the integrated design of a close fit structure between layers is realized, and the back cavity layer is arranged right below an antenna radiator and can finish the resonant reflection of signals and widen the impedance bandwidth. The invention has the function of circularly polarized radiation and can meet the rigorous technical requirements of the digital multi-beam antenna on the radiation unit; and compact structure, simplicity, small electrical size.

Description

Low-profile microstrip antenna
Technical Field
The invention relates to the technical field of antennas, in particular to a low-profile microstrip antenna.
Background
At present, the frequency spectrum of communication in the satellite communication field is wider and the requirement for radio frequency terminals is higher and higher, which requires that the working bandwidth of the antenna must be widened gradually. Satellite communication and navigation communication systems often require equipment to have functions of receiving and transmitting signals; since the frequency bands for transmitting and receiving signals are different, the antenna is required to be capable of operating in multiple frequencies and in a wide band. With the rapid development of the phased array antenna technology, the phased array antenna has unique technical advantages so that the phased array antenna is more and more emphasized by the great engineering technicians, the antenna radiation unit is used as one of the key technical components of the phased array antenna, and the excellent degree of the performance of the antenna radiation unit directly influences the satellite communication quality.
At present, circularly polarized microstrip antennas mainly have the following forms:
1. diagonal corner cut circular polarization microstrip antenna: the antenna in the form has a simple structure and a low profile, but the axial ratio and the standing wave bandwidth of the antenna are less than 2%.
2. The axis ratio and standing wave bandwidth of the circular polarization microstrip antenna of the integrated electric bridge are wider, the axis ratio bandwidth of the microstrip antenna is usually less than 3dB and is more than 15%, the standing wave bandwidth of the microstrip antenna is less than 2 and is more than 20%, but the external circular polarization electric bridge occupies a larger space, is long in feeder line and has larger difference loss, and the integrated design of the antenna and a network is not facilitated.
3. Compared with the traditional circularly polarized microstrip antenna, the circularly polarized microstrip antenna in the form has the characteristics of impedance and wide axial ratio bandwidth, but due to the asymmetry of the slot structure, the wider axial ratio bandwidth is usually realized by loading an isolation resistor, so that two problems are caused: on one hand, the isolation resistors need to be welded manually, and when the array scale is large, huge workload is needed, and the consistency of unit welding is difficult to ensure; on the other hand, the isolation resistance causes a certain difference loss, resulting in a reduction of the radiation gain to a different extent.
The above circularly polarized microstrip antennas have advantages and disadvantages, and although individual index characteristics are excellent, they have a common defect that they cannot satisfy the technical requirements of miniaturized broadband operation, especially the phased array antenna units of broadband and multi-frequency operation.
Disclosure of Invention
Accordingly, the present invention provides a low profile microstrip antenna. The dual-band circularly polarized radiation device has the characteristics of miniaturization, wide bandwidth, compact structure and capability of realizing dual-band circularly polarized radiation.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a low-profile microstrip antenna comprises a microstrip patch layer, a coupling slot layer and a back cavity layer which are sequentially arranged from top to bottom, wherein the microstrip patch layer comprises a first square dielectric plate, two radiation patches are arranged on the upper surface of the first square dielectric plate, and the two radiation patches are symmetrical about the geometric center of the first square dielectric plate; each radiation patch comprises a semi-elliptical radiation piece and a rectangular branch which are connected together, the straight side of the semi-elliptical radiation piece is the long axis of the semi-elliptical radiation piece, and the long side and the long axis of the rectangular branch are positioned on the same straight line; metal through holes with equal spacing are arranged at the edge of the long axis of the semi-elliptical radiating patch;
the coupling gap layer comprises a second square dielectric plate, a metal ground is arranged on the upper surface of the second square dielectric plate, and the metal through hole is used for conducting the radiator sheet and the metal ground; a metal gap is arranged on the metal ground, the metal gap is positioned right below the space between the two semi-elliptical radiating sheets, and the long edge of the metal gap is parallel to the long axis of the semi-elliptical radiating sheet; a microstrip feeder line is arranged on the lower surface of the second square dielectric plate, is positioned right below the metal gap and is orthogonal to the metal gap;
one end of the microstrip feeder line is provided with a connection point for connecting with external equipment, and the other end of the microstrip feeder line is an open line;
the back cavity layer is a metal aluminum block with an open rectangular cavity, and the long edge of the open rectangular cavity is parallel to the long edge of the metal gap.
The invention adopts the technical scheme to produce the beneficial effects that:
1. the invention has the characteristics of compact and simple structure and small electric size.
2. According to the invention, through the special-shaped structure of the microstrip patch, the eddy current design of the surface current of the antenna is realized, so that the antenna has a circular polarization radiation function; by loading the electromagnetic structure of the via array, the impedance bandwidth of the patch antenna is improved on the premise of not increasing the thickness of the antenna, and the technical requirements of the digital multi-beam antenna on the radiation unit are met.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Fig. 2 is a schematic top surface structure of the first square dielectric plate in fig. 1.
Fig. 3 is a schematic top surface structure of the second square dielectric plate in fig. 1.
Fig. 4 is a schematic view of a lower surface structure of the second square dielectric plate in fig. 1.
Fig. 5 is a schematic structural diagram of the back cavity layer in fig. 1.
In the figure: 1. the antenna comprises a micro-strip patch layer 2, a coupling gap layer 3, a back cavity layer 4, a radiation patch 5, a metal through hole 6, a semi-elliptical radiation sheet 7, a rectangular branch section 8, a metal ground 9, a metal gap 10 and a micro-strip feeder line.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments.
A low-profile microstrip antenna comprises a microstrip patch layer, a coupling slot layer and a back cavity layer which are sequentially arranged from top to bottom, wherein the microstrip patch layer comprises a first square dielectric plate, two radiation patches are arranged on the upper surface of the first square dielectric plate, and the two radiation patches are symmetrical about the geometric center of the first square dielectric plate; each radiation patch comprises a semi-elliptical radiation piece and a rectangular branch which are connected together, the straight side of the semi-elliptical radiation piece is the long axis of the semi-elliptical radiation piece, and the long side and the long axis of the rectangular branch are positioned on the same straight line; metal through holes with equal spacing are arranged at the edge of the long axis of the semi-elliptical radiating patch;
the coupling gap layer comprises a second square dielectric plate, a metal ground is arranged on the upper surface of the second square dielectric plate, and the metal through hole is used for conducting the radiator sheet and the metal ground; a metal gap is arranged on the metal ground, the metal gap is positioned right below the space between the two semi-elliptical radiating sheets, and the long edge of the metal gap is parallel to the long axis of the semi-elliptical radiating sheet; a microstrip feeder line is arranged on the lower surface of the second square dielectric plate, is positioned right below the metal gap and is orthogonal to the metal gap;
one end of the microstrip feeder line is provided with a connection point for connecting with external equipment, and the other end of the microstrip feeder line is an open line;
the back cavity layer is a metal aluminum block with an open rectangular cavity, and the long edge of the open rectangular cavity is parallel to the long edge of the metal gap.
The following is a more specific example:
as shown in fig. 1 to 4, the microstrip patch layer 1, the coupling slot layer 2, and the back cavity layer 3 are included in this embodiment, where the microstrip patch layer 1 and the coupling slot layer 2 adopt a multilayer printed board processing technology, so as to implement an integrated design of a close-fit structure between layers, and the back cavity layer 3 is located right below an antenna radiator, so as to complete resonant reflection of signals and widen the impedance bandwidth.
The microstrip patch layer 1 is positioned on the uppermost layer of the antenna body, the main body of the microstrip patch layer is a first square dielectric plate which is made of an RF35 plate manufactured by Tastic company, the dielectric constant is 3.5, and the thickness is 2.5 mm; two radiation patches are arranged on the surface of the first square dielectric plate, and the two radiation patches are in 180-degree rotational symmetry with respect to the geometric center point of the upper surface of the first square dielectric plate.
Further, each radiation patch is composed of two parts, one part is a semielliptical radiation piece which is divided equally along the long axis direction for the whole elliptical radiation piece, and one half of the semielliptical radiation piece is formed.
Further, the length of the semielliptic radiating patch along the major axis is 0.35 lambda0Wherein λ is0The wavelength corresponding to the working center frequency of the antenna; short axis of 0.29 lambda0The interval d between the two semi-elliptical radiating fins is 0.05 lambda0。
The semielliptical radiating fin is provided with a rectangular branch 7 at the end point of one side of the semielliptical radiating fin in the major axis direction, and the rectangular branch 7 extends out of the semielliptical radiating fin 6 area; the overhanging length c is 0.07 lambda0Width e is 0.02 lambda0。
The edge of the long axis of the semielliptical radiating patch 6 is provided with a via hole array 8, the via holes are arranged at equal intervals, the diameter of each via hole is 1mm, and the length of the array is close to the straight line section of the semielliptical radiating patch; the via array is used for conducting the radiation patch and the metal ground on the upper surface of the coupling gap layer.
The coupling gap layer 2 is arranged right below the microstrip patch layer 1, and is also made of an RF35 board manufactured by Taconic company, the dielectric constant is 3.5, the thickness is 1mm, the upper surface of the coupling gap layer is provided with metal copper plating to form a metal ground, and a metal gap 9 is arranged on the metal ground;
furthermore, the metal slot 9 is rectangular, the extending direction of the metal slot is consistent with the projection extending direction of the surface of the semielliptic radiation piece along the long axis of the semielliptic radiation piece, the metal slot 9 is on the geometric central line of the upper surface of the coupling slot layer 2, the slot length is S1＝0.27λ0。
Further, the lower surface of the coupling gap layer 2 is provided with a microstrip feed line 10, and the extension direction of the microstrip feed line 10 is orthogonal to the extension direction of the projection of the metal gap 9 on the lower surface.
Furthermore, one end of the microstrip feed line 10 is connected to an external device as the feed line, the other end arranged in the orthogonal direction of the metal slot 9 is an open-circuit line structure, extends through the projection area of the metal slot 9 on the lower surface of the coupling slot layer 2, and the line width of the microstrip feed line 10 is 2.2 mm.
The back cavity layer 3 is positioned right below the coupling gap layer 2 and is of a metal aluminum block structure, a rectangular cavity is arranged right below the metal gap 9, and the extending direction of the rectangular cavity is consistent with that of the metal gap 9; which acts as an integral support structure for the antenna to produce directional radiation from the antenna.
Further, the rectangular cavity length C1＝0.32λ0Width of C2＝0.015λ0High C of3＝0.025λ0。
The low-profile microstrip antenna device mainly comprises two microwave dielectric plates and a back cavity layer 3, wherein the microwave dielectric layers adopt a multilayer plate processing technology, and the inside of the dielectric is provided with a plurality of layers of dielectric and metallized through holes, so that the structure is compact, the profile is low, the technical requirements of a digital communication system on the structure and the electrical property of an antenna part are met, and the technical advantage is obvious.
The working principle of the low-profile microstrip antenna is as follows: when a transmitting signal enters a radio frequency connector and enters a microstrip feeder line 10, the microstrip feeder line 10 excites resonant current of the microstrip feeder line on a metal gap 9, the resonant current is reflected by a rectangular cavity 11 to generate secondary resonant current, the two resonant currents are superposed, a voltage difference is generated between two rows of through holes of two radiation patches, antinode current is formed on a half-wave oscillator formed by the radiation patches, the current on the rectangular branch and the micro-winding current with orthogonal polarization are jointly superposed in a far field, and the antenna circularly polarized electromagnetic wave is realized.

Claims (1)

1. A low-profile microstrip antenna comprises a microstrip patch layer (1), a coupling gap layer (2) and a back cavity layer (3) which are sequentially arranged from top to bottom, and is characterized in that the microstrip patch layer comprises a first square dielectric plate, two radiation patches (4) are arranged on the upper surface of the first square dielectric plate, and the two radiation patches are symmetrical about the geometric center of the first square dielectric plate; each radiation patch comprises a semi-elliptical radiation piece (6) and a rectangular branch (7) which are connected together, the straight side of the semi-elliptical radiation piece is the long axis of the semi-elliptical radiation piece, and the long side and the long axis of the rectangular branch are positioned on the same straight line; metal through holes (5) with equal spacing are arranged at the edge of the long axis of the semi-elliptical radiating fin (6);
the coupling gap layer comprises a second square dielectric plate, the upper surface of the second square dielectric plate is provided with a metal ground, and the metal via hole is used for conducting the radiation patch and the metal ground (8); a metal gap is arranged on the metal ground, the metal gap is positioned right below the space between the two semi-elliptical radiating sheets, and the long edge of the metal gap (9) is parallel to the long axis of the semi-elliptical radiating sheet; a microstrip feeder line (10) is arranged on the lower surface of the second square dielectric plate, is positioned right below the metal slot and is orthogonal to the metal slot;
one end of the microstrip feeder line is provided with a connection point for connecting with external equipment, and the other end of the microstrip feeder line is an open line;
the back cavity layer is a metal aluminum block with an open rectangular cavity, and the long edge of the open rectangular cavity is parallel to the long edge of the metal gap.
CN202010843696.XA 2020-08-20 2020-08-20 Low-profile microstrip antenna Pending CN111864357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010843696.XA CN111864357A (en) 2020-08-20 2020-08-20 Low-profile microstrip antenna

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010843696.XA CN111864357A (en) 2020-08-20 2020-08-20 Low-profile microstrip antenna

Publications (1)

Publication Number Publication Date
CN111864357A true CN111864357A (en) 2020-10-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010843696.XA Pending CN111864357A (en) 2020-08-20 2020-08-20 Low-profile microstrip antenna

Country Status (1)

Country Link
CN (1) CN111864357A (en)

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