CN111863788A - 具有集成无源部件的磁场传感器封装件 - Google Patents

具有集成无源部件的磁场传感器封装件 Download PDF

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Publication number
CN111863788A
CN111863788A CN202010326510.3A CN202010326510A CN111863788A CN 111863788 A CN111863788 A CN 111863788A CN 202010326510 A CN202010326510 A CN 202010326510A CN 111863788 A CN111863788 A CN 111863788A
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magnetic field
field sensor
sensor package
integrated
semiconductor chip
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CN202010326510.3A
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M·辛德勒
H·托伊斯
M·韦伯
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Infineon Technologies AG
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Infineon Technologies AG
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    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector

Abstract

本公开涉及一种具有集成无源部件的磁场传感器封装件。磁场传感器封装件包括芯片载体、布置在芯片载体上的磁场传感器、布置在芯片载体上的集成电路以及至少一个集成无源部件，该磁场传感器被设计为用于获取磁场，该集成电路被设计为用于逻辑地处理由磁场传感器提供的传感器信号，该至少一个集成无源部件与磁场传感器或集成电路中的至少一个电耦合。

Description

具有集成无源部件的磁场传感器封装件
技术领域
本公开总体上涉及传感器装置。特别地，本公开涉及具有集成无源部件的磁场传感器封装件。
背景技术
磁场传感器可以例如用于获取速度、位置或角度。特别地，这样的传感器的典型应用是在汽车领域中。磁场传感器可以具有用于获取磁场的传感器单元，并且磁场传感器与用于逻辑地处理所获取的信号的电路连接。磁场传感器的制造商一直致力于改善它们的产品。特别地，期望的是提供具有改善的性能的、低成本的磁场传感器。
发明内容
本公开的多个方面涉及一种磁场传感器封装件，包括芯片载体、布置在芯片载体上的磁场传感器、布置在芯片载体上的集成电路以及至少一个集成无源部件，该磁场传感器被设计为用于获取磁场，该集成电路被设计为用于逻辑地处理由磁场传感器提供的传感器信号，该至少一个集成无源部件与磁场传感器或集成电路中的至少一个电耦合。
附图说明
在下文中借助附图具体地阐释根据本公开的磁场传感器封装件。在附图中示出的元件不必相对于彼此按比例绘制。相同的附图标记可以表示相同的部件。
图1示意性地示出了根据本公开的磁场传感器封装件100的横截面侧视图。
图2A示意性地示出了根据本公开的磁场传感器封装件200A的横截面侧视图。
图2B示意性地示出了根据本公开的磁场传感器封装件200B的横截面侧视图。
图2C示意性地示出了根据本公开的磁场传感器封装件200C的横截面侧视图。
图3示意性地示出了根据本公开的磁场传感器封装件300的横截面侧视图。
图4示意性地示出了根据本公开的磁场传感器封装件400的俯视图。
图5示意性地示出了根据本公开的磁场传感器封装件500的透视图。磁场传感器封装件500在反偏置磁体(Back-Bias Magnet)上相对于铁磁轮以顶部读取配置被布置。
图6示意性地示出了根据本公开的磁场传感器封装件600的透视图。磁场传感器封装件600在反偏置磁体上相对于铁磁轮以侧部读取配置被布置。
具体实施方式
图1示意性地示出了根据本公开的磁场传感器封装件100的横截面侧视图。以一般方式图示了磁场传感器封装件100，以定性地说明本公开的各个方面。磁场传感器封装件100可以具有在图1中为了简单起见而未示出的其它方面。
磁场传感器封装件100可以具有芯片载体2，该芯片载体2可以是例如引线框架或具有可选的电气再分布层的陶瓷基板。磁场传感器封装件100还可以包含布置在芯片载体2上的集成电路4。在图1的示例中，磁场传感器6可以集成到集成电路4中。备选地，磁场传感器6还可以是分立的磁场传感器，也就是说磁场传感器6可以实现为分立的组件。磁场传感器6可以被设计为用于获取磁场，并且基于所获取的磁场输出电信号。集成电路4可以被设计为用于逻辑地处理由磁场传感器6提供的传感器信号。集成电路4可以包含例如专用集成电路(ASIC:Application Specific Integrated Circuit)。如果磁场传感器6包含在集成电路4中，则集成电路4也可以称为ASIC传感器。
磁场传感器封装件100还可以具有至少一个集成无源部件，所述至少一个集成无源部件与磁场传感器6或集成电路4中的至少一个电耦合。在图1的示例中，至少一个集成无源部件可以集成到布置在芯片载体2上的半导体芯片8中。半导体芯片8和集成电路4可以彼此电连接。此外，半导体芯片8可以与芯片载体2电连接。在图1的示例中，这样的电连接可以通过一个或多个键合线10和12实现。图4中示出和讨论了这样的电连接的详细的示例性图示。
磁场传感器封装件100还可以具有封装材料14，该封装材料14至少部分地封装集成电路4和半导体芯片8。封装材料可以例如由层压板、环氧树脂、热塑性塑料或热固性聚合物制成。集成电路4和半导体芯片8的从封装材料14外部的电接触可以通过芯片载体2提供。在图1的示例中，这样的电接触可以通过引线框架的一个或多个连接导体提供。图4中示出和讨论了这样的引线框架的示例性设计。
在一个示例中，磁场传感器6可以是霍尔磁场传感器。在其它的示例中，磁场传感器6可以是xMR传感器，特别是AMR传感器、GMR传感器或TMR传感器。例如，在霍尔传感器的情况下可以将霍尔元件或霍尔传感器单元集成到集成电路4中。在这样的霍尔IC中可以进行信号放大、模拟数字转换、数字信号处理和/或偏移补偿和温度补偿。
集成在半导体芯片8中的无源部件可以具有至少一个电容器。这样的集成电容器可以例如是“SilCap”(代表“silicon capacitor”)。至少一个电容器可以被设计为用于以下功能中的一个或多个功能。在一个示例中，电容器可以提供磁场传感器封装件100的供电电压，特别是当磁场传感器封装件100的实际的供电电压短暂失效时。因此，电容器可以提供缓冲电容器的功能，以便桥接或保障磁场传感器封装件100的供电电压。在另一个示例中，电容器可以为磁场传感器封装件100提供ESD(Electro Static Discharge)保护。因此，电容器可以被设计为用于保护磁场传感器封装件100免受电压击穿，该电压击穿例如可以由运行电压尖峰或雷击引起。在又一个示例中，电容器可以提供磁场传感器封装件100的电磁兼容性(EMV)，例如当磁场传感器封装件100被安装到电路板上时，应当提供该电磁兼容性。特别地，电容器可以提供信号平滑并且防止自激的谐振(sich aufschaukelndeResonanzen)。
至少一个电容器可以具有大于约22nF的电容。特别地，电容可以取直到约500nF的值。在将电容器集成到半导体芯片8的半导体材料中时，可以相对精确地从连续的范围中选择和设置电容器的电容值。与此相反，例如SMD(Surface Mount Device)电容器仅提供选定的离散电容值。
磁场传感器封装件100不必限于单个集成部件，而是可以包含至少一个其它的集成无源部件，该集成无源部件可以例如被集成到半导体芯片8中。多个无源部件可以以简单的方式被集成到半导体材料中。在一个示例中，半导体芯片8可以具有多个电容器。在其它的示例中，半导体芯片8可以包括电阻器、电感器、二极管中的至少一个。与无源部件由SMD器件实现的磁场传感器封装件相比，通过将多个无源的集成部件集成到同一半导体芯片8中可以减小磁场传感器封装件100的尺寸。
因为集成电路4、磁场传感器6和集成无源部件全都可以集成在半导体材料中，所以存在将这些部件或这些部件的功能灵活且任意地分配到一个或多个半导体芯片上的可能性。在图1的示例中，集成电路4和磁场传感器6一起被集成到与第一半导体芯片8分离的第二半导体芯片中。作为图1的示例的备选方案，例如可以出现以下的其它情形。在第一示例中，集成电路4和集成无源部件可以一起被集成在第一半导体芯片8中。在第二示例中，磁场传感器6和集成无源部件可以一起被集成在第一半导体芯片8中，而集成电路4可以被集成在与第一半导体芯片8分离的第二半导体芯片中。在第三示例中，磁场传感器6、集成电路4和集成无源部件可以一起被集成在第一半导体芯片8中。在这样的情况下，集成无源部件可以特别地包括具有大于1nF、或大于2nF、或大于3nF、或大于4nF电容的电容器，以便例如提供EMV功能。
集成电路4和半导体芯片8可以借助相同的安装技术固定在芯片载体2上。由此可以防止使用其它固定技术，从而避免其它的成本。在一个示例中，两个部件可以通过粘合剂固定在芯片载体2上，其中粘合剂可以特别地是电绝缘的。与此相反，固定无源SMD部件将需要焊接工序或使用导电粘合剂。例如，这样的导电粘合剂可以是银导电粘合剂，该银导电粘合剂容易受到电化学迁移过程的影响，该电化学迁移过程可能会导致不期望有的短路。因此，在根据本公开的磁场传感器封装件中可以避免这样的电化学迁移过程。
集成电路4和半导体芯片8可以以相同的方式电接触。在图1的示例中，集成电路4的上侧上的电接触部和半导体芯片8的上侧上的电接触部通过键合线10和12接触。如上面已经提及的，与此相反，使用无源SMD部件将需要至少一个额外的工序，以用于SMD部件的电接触。因此，用于芯片载体2的电接触的表面可以根据本公开具有如下的特性，这样的特性被设计用于借助引线键合工艺进行接触，而不必被设计用于借助焊接工序进行接触。因此，在使用根据本公开的磁场传感器封装件时，可以降低芯片载体2表面结构的复杂性。
在图1的示例中，集成电路4和第一半导体芯片8二者均被封装在相同的封装材料14中。备选地，磁场传感器封装件可以具有不止一个封装材料。例如，集成电路4可以被封装到第一封装材料中，并且半导体芯片8可以被封装到与第一封装材料分离的第二封装材料中。特别地，第一封装材料和第二封装材料可以由相同的材料制成。
通过使用集成无源部件可以减小磁场传感器封装件100的大小。特别地，磁场传感器封装件100或封装材料14在垂直于芯片载体2的方向上的尺寸“d”可以小于约1.2mm。在一个具体示例中，尺寸“d”可以具有约1.1mm的值。与此相比，具有无源SMD部件的常规的磁场传感器封装件的类似的尺寸可以由于SMD部件的大小而具有明显大于1.2mm的值。在一个具体示例中，常规的磁场传感器封装件的这样的尺寸可以具有约1.56mm的值。在这样的情况下，使用根据本公开的集成无源部件可以将尺寸“d”减小约460微米的值。
半导体芯片8或其中所集成的无源部件可以被设计为用于在超过160℃的温度下工作。与此相比，具有SMD器件(诸如陶瓷电容器)的磁场传感器封装件仅可以在直到约150℃的运行温度下使用。因此，在某些应用中，在使用磁场传感器封装件100时可以省去额外的冷却。例如，在载重汽车的制动器的周围环境中可以出现直到200℃的温度。在使用具有SMD器件的磁场传感器封装件时必须提供冷却，以便将温度降低到150℃以下。与此相反，在使用根据本公开的磁场传感器封装件时，可以省去这样的冷却。
特别地，磁场传感器封装件100可以不具有无源SMD部件。在常规的磁场传感器封装件中，大部分无源部件可以由SMD部件实现。与此相反，在根据本公开的磁场传感器封装件中，这些SMD部件的功能性可以被综合在半导体芯片8中。
图2A示意性地示出了根据本公开的磁场传感器封装件200A的横截面侧视图。磁场传感器封装件200A可以与图1的磁场传感器封装件100至少部分地相似，使得用于图1的实施方式也可以适用于图2A。
与图1相反，在图2A中集成电路4和半导体芯片8以彼此堆叠的方式被布置在芯片载体2的同一安装面上。为了简单起见，未明确示出图1中的磁场传感器6。在图2A的示例中，通过一个或多个键合线10和12提供集成电路4、半导体芯片8和芯片载体2之间的电连接。
作为图2A中所示的示例的备选方案，半导体芯片8可以是布置在集成电路4上的倒装芯片。在图2B的横截面侧视图中示意性地示出了根据本公开的示例性的磁场传感器封装件200B。可以通过在半导体芯片8的下侧上的焊料沉积或焊料球9来提供半导体芯片8与集成电路4之间的电连接。布置在半导体芯片8下方的集成电路4可以通过一个或多个键合线12与芯片载体2电连接。
图2C示意性地示出了根据本公开的磁场传感器封装件200C的横截面侧视图。磁场传感器封装件200C可以与图2A的磁场传感器封装件200A至少部分地相似。与图2A相反，在图2C的示例中半导体芯片8通过通孔11(诸如一个或多个“硅通孔”(TSV))与集成电路4电连接。通过使用通孔11代替键合线10(参见图2A)，可以减小磁场传感器封装件200C与发送器元件(参见图5和图6)之间的气隙。同时可以避免键合线10的电感的影响。
图3示意性地示出了根据本公开的磁场传感器封装件300的横截面侧视图。磁场传感器封装件300可以与图1的磁场传感器封装件100至少部分地相似，使得用于图1的实施方式也可以适用于图3。
与图1相反，在图3中集成电路4和第一半导体芯片8被布置在芯片载体2的相对的安装面上。为了简单起见，未明确示出图1中的磁场传感器6。例如，可以通过芯片载体2提供集成电路4与半导体芯片8之间的电连接。例如，芯片载体可以是具有电气再分布层的陶瓷基板，通过该电气再分布层可以实现这样的电连接。
图4示意性地示出了根据本公开的磁场传感器封装件400的俯视图。磁场传感器封装件400可以与图1的磁场传感器封装件100相符或至少部分地相似，使得用于图1的实施方式也可以适用于图4。
磁场传感器封装件400包含集成电路4和具有至少一个集成无源部件的半导体芯片8，该集成电路4和该半导体芯片8被布置在芯片载体2上。为了简单起见，未明确示出图1中的磁场传感器6。在图4的示例中，芯片载体2可以以引线框架的形式形成，该引线框架例如可以由铜、镍、铝或不锈钢制成。引线框架可以具有裸片焊盘16和例如三个连接导体18A、18B和18C。裸片焊盘16和中间的连接导体18B可以一体地形成。上部的连接导体18A可以是输入/输出接触部(参见“I/O”)。中间的连接导体18B可以与地电位(参见“GND”)连接。下部的连接导体18C可以提供供电电压(参见“VDD”)。连接导体18A、18B和18C相对于彼此的在图4中所示的布置是示例性的。
集成电路4可以通过键合线10与半导体芯片8电连接。半导体芯片8可以通过第一键合线12A与I/O连接导体18A电连接。此外，半导体芯片8可以通过第二键合线12B并且通过连接导体18C与供电电压连接。此外，半导体芯片8可以通过第三键合线12C与裸片焊盘16连接，即接地。在图4的示例中，集成电路4和半导体芯片8被嵌入到封装材料14中。可以通过连接导体18A至18B从封装材料14的外部电接触所嵌入的部件。
集成电路4和半导体芯片8可以被布置在裸片焊盘16上，即被布置在芯片载体2的同一安装面上。集成电路4和第一半导体芯片8可以处于相同的电位(参见“GND”)。在常规的磁场传感器封装件中，应当提供例如EMV或ESD功能的无源SMD部件常常必须被布置为使得这些无源SMD部件桥接引线框架的不同连接导体之间形成的间隙或开口。在这样布置的多个无源SMD部件的情况下，由于所需的复杂的芯片载体结构而严重地限制了布置集成电路的可能性。与此相反，根据本公开的磁场传感器封装件的无源部件可以被集成到一个或多个半导体芯片8中，半导体芯片8可以与集成电路4以相同的电位布置在芯片载体2的共同表面上。因此，在根据本公开的磁场传感器封装件中，不需要在芯片载体2中形成用于布置无源SMD部件的间隙或开口。相反，可以使用具有不太复杂的几何形状的芯片载体。
图5示意性地示出了根据本公开的磁场传感器封装件500的透视图。例如，磁场传感器封装件500可以与图1至图4的磁场传感器封装件中的一个磁场传感器封装件相似。为了简单起见，图5中仅示出了磁场传感器封装件500的半导体芯片8。在一个示例中，可以在半导体芯片8中集成磁场传感器6、用于处理磁场传感器6的电信号的电路和至少一个无源部件。在其它的示例中，磁场传感器封装件500可以具有多个半导体芯片，如已经结合图1所讨论的，所提及的部件的功能在不同情形下可以被分布到这些半导体芯片上。
磁场传感器封装件500可以被布置在反偏置磁体20上并且相对于铁磁轮22。磁场传感器封装件500和铁磁轮22可以通过气隙24彼此分离。磁场传感器封装件500和反偏置磁体20可以至少部分地被嵌入在第二封装材料26中。芯片载体2或芯片载体2的连接导体可以至少部分地从第二封装材料26凸出，使得还可以从第二封装材料26的外部电接触磁场传感器封装件500的电气部件。第二封装材料26可以例如由层压板、环氧树脂、热塑性塑料或热固性聚合物制成。
磁场传感器6可以被设计为用于获取铁磁轮22的速度。在图5的示例中，如在图中所示，铁磁轮22具有北极和南极(参见“N”和“S”)。在另一示例中，铁磁轮22可以是铁磁齿轮。反偏置磁体20可以为磁场传感器6产生辅助场。由于图5中的铁磁轮22的磁极性(或由于另一示例中的齿轮的不均匀的形状)，由磁场传感器6获取的磁场在铁磁轮22旋转期间发生变化，并且磁场传感器6可以产生输出脉冲。输出脉冲可以被传递到逻辑集成电路(例如ASIC)，该逻辑集成电路可以对输出脉冲进行计数，并且计算旋转的铁磁轮22的速度。图5的布置可以例如在汽车应用中用于确定车轮速度，特别是在安全相关的应用中，诸如ABS(防抱死制动系统)、发动机或变速器。
图6示意性地示出了根据本公开的磁场传感器封装件600的透视图。磁场传感器封装件600可以与图5的磁场传感器封装件500至少部分地相似，使得用于图5的实施方式也可以适用于图6。与图5相反，磁场传感器封装件600和反偏置磁体20相对于彼此以另一方式布置。特别地，芯片载体2可以围绕反偏置磁体20弯曲。磁场传感器封装件500与反偏置磁体20在图5中的相对布置可以被称为顶部读取(Top-Read)配置。磁场传感器封装件600与反偏置磁体20在图6中的相对布置可以被称为侧部读取(Side-Read)配置。
在图5和图6的示例中，铁磁轮22用作发送器元件。在其它的示例中，其它部件可以具有发送器元件的功能，诸如多极磁体。例如，可以想到没有反偏置磁体但具有磁性目标(诸如多极轮)的配置。
如上面已经结合图1所讨论的，与使用无源SMD部件相比，通过使用集成在半导体芯片中的无源部件可以特别地减小磁场传感器封装件的尺寸。因此，根据本公开的磁场传感器封装件可以特别地被设计为相对于反偏置磁体能够以顶部读取配置被布置，而且能够以侧部读取配置被布置。如上面已经阐释的，在常规的磁场传感器封装件中使用多个无源SMD部件可能会由于复杂的芯片载体结构而严重地限制集成电路的布置。因此，以顶部读取配置布置这样的常规磁场传感器封装件可能会变得困难，并且在最坏的情况下是不可能的。
在下文中借助示例阐释磁场传感器封装件。
示例1是一种磁场传感器封装件，包括：芯片载体；布置在芯片载体上的磁场传感器，该磁场传感器被设计为用于获取磁场；布置在芯片载体上的集成电路，该集成电路被设计为用于逻辑地处理由磁场传感器提供的传感器信号；以及至少一个集成无源部件，该至少一个集成无源部件与磁场传感器或集成电路中的至少一个电耦合。
示例2是根据示例1的磁场传感器封装件，还包括：布置在芯片载体上的第一半导体芯片，其中至少一个集成无源部件被集成到第一半导体芯片中。
示例3是根据示例1或2的磁场传感器封装件，其中集成无源部件包括至少一个电容器，其中至少一个电容器被设计为用于以下功能中的至少一个功能：提供磁场传感器封装件的供电电压；为磁场传感器封装件提供ESD保护；以及提供磁场传感器封装件的电磁兼容性。
示例4是根据示例3的磁场传感器封装件，其中至少一个电容器具有大于22nF的电容。
示例5是根据前述示例中的任一个示例的磁场传感器封装件，还包括：至少一个其它的集成无源部件，其中至少一个其它的集成无源部件包括电阻器、电感器、电容器、二极管中的至少一个。
示例6是根据前述示例中的任一个示例的磁场传感器封装件，其中集成电路和集成无源部件一起被集成在半导体芯片中。
示例7是根据示例2至5中的任一个示例的磁场传感器封装件，其中磁场传感器和集成电路一起被集成在与第一半导体芯片分离的第二半导体芯片中。
示例8是根据示例2至5中的任一个示例的磁场传感器封装件，其中磁场传感器和集成无源部件一起被集成在第一半导体芯片中，并且集成电路被集成在与第一半导体芯片分离的第二半导体芯片中。
示例9是根据示例2至5中的任一个示例的磁场传感器封装件，其中磁场传感器、集成电路和集成无源部件一起被集成在第一半导体芯片中，其中集成无源部件包括具有大于1nF的电容的至少一个电容器。
示例10是根据示例2至9中的任一个示例的磁场传感器封装件，其中第一半导体芯片和集成电路被布置在芯片载体的同一安装面上。
示例11是根据示例2至9中的任一个示例的磁场传感器封装件，其中第一半导体芯片和集成电路被布置在芯片载体的相对的安装面上。
示例12是根据示例2至9中的任一个示例的磁场传感器封装件，其中第一半导体芯片和集成电路以彼此堆叠的方式被布置在芯片载体的同一安装面上。
示例13是根据示例2至12中的任一个示例的磁场传感器封装件，还包括：封装材料，其中第一半导体芯片和集成电路二者均被封装在相同的封装材料中。
示例14是根据示例13的磁场传感器封装件，其中封装材料在垂直于芯片载体的方向上的尺寸小于1.2mm。
示例15是根据示例2至12中的任一个示例的磁场传感器封装件，还包括：第一封装材料，其中第一半导体芯片被封装在第一封装材料中；以及与第一封装材料分离的第二封装材料，其中集成电路被封装在第二封装材料中。
示例16是根据前述示例中的任一个示例的磁场传感器封装件，其中该磁场传感器封装件被设计为相对于反偏置磁体能够以顶部读取配置被布置，而且能够以侧部读取配置被布置。
示例17是根据前述示例中的任一个示例的磁场传感器封装件，其中该磁场传感器封装件被布置在反偏置磁体上，磁场传感器相对于发送器元件被布置，磁场传感器被设计为用于获取发送器元件的速度，并且磁场传感器封装件与发送器元件通过气隙分离。
示例18是根据示例2至17中的任一个示例的磁场传感器封装件，其中第一半导体芯片的电接触部和集成电路的电接触部通过键合线接触。
示例19是根据前述示例中的任一个示例的磁场传感器封装件，其中集成无源部件被设计为用于在超过160℃的温度下工作。
示例20是根据前述示例中的任一个示例的磁场传感器封装件，其中该磁场传感器封装件不具有无源SMD部件。
尽管在本文中示出和说明了特定实施方式，但是对于本领域普通技术人员来说显而易见的是，多个备选的和/或等效的实施方式可以代替所示出和说明的特定实施方式，而不偏离本公开的范围。本申请应当覆盖在本文中所讨论的特定实施方式的所有修改或变型。因此，本公开仅由权利要求和权利要求的等同物限制。

Claims (20)

1.一种磁场传感器封装件，包括：
芯片载体；
磁场传感器，被布置在所述芯片载体上，所述磁场传感器被设计为用于获取磁场；
集成电路，被布置在所述芯片载体上，所述集成电路被设计为用于逻辑地处理由所述磁场传感器提供的传感器信号；以及
至少一个集成无源部件，所述至少一个集成无源部件与所述磁场传感器或所述集成电路中的至少一个电耦合。
2.根据权利要求1所述的磁场传感器封装件，还包括：
第一半导体芯片，被布置在所述芯片载体上，其中所述至少一个集成无源部件被集成到所述第一半导体芯片中。
3.根据权利要求1或2所述的磁场传感器封装件，其中所述集成无源部件包括至少一个电容器，其中所述至少一个电容器被设计为用于以下功能中的至少一个功能：
提供所述磁场传感器封装件的供电电压；
为所述磁场传感器封装件提供ESD保护；以及
提供所述磁场传感器封装件的电磁兼容性。
4.根据权利要求3所述的磁场传感器封装件，其中所述至少一个电容器具有大于22nF的电容。
5.根据前述权利要求中任一项所述的磁场传感器封装件，还包括：
至少一个其它的集成无源部件，其中所述至少一个其它的集成无源部件包括电阻器、电感器、电容器、二极管中的至少一个。
6.根据前述权利要求中任一项所述的磁场传感器封装件，其中所述集成电路和所述集成无源部件一起被集成在半导体芯片中。
7.根据权利要求2至5中任一项所述的磁场传感器封装件，其中所述磁场传感器和所述集成电路一起被集成在与所述第一半导体芯片分离的第二半导体芯片中。
8.根据权利要求2至5中任一项所述的磁场传感器封装件，其中所述磁场传感器和所述集成无源部件一起被集成在所述第一半导体芯片中，并且所述集成电路被集成在与所述第一半导体芯片分离的第二半导体芯片中。
9.根据权利要求2至5中任一项所述的磁场传感器封装件，其中所述磁场传感器、所述集成电路和所述集成无源部件一起被集成在所述第一半导体芯片中，其中所述集成无源部件包括具有大于1nF的电容的至少一个电容器。
10.根据权利要求2至9中任一项所述的磁场传感器封装件，其中所述第一半导体芯片和所述集成电路被布置在所述芯片载体的同一安装面上。
11.根据权利要求2至9中任一项所述的磁场传感器封装件，其中所述第一半导体芯片和所述集成电路被布置在所述芯片载体的相对的安装面上。
12.根据权利要求2至9中任一项所述的磁场传感器封装件，其中所述第一半导体芯片和所述集成电路以彼此堆叠的方式被布置在所述芯片载体的同一安装面上。
13.根据权利要求2至12中任一项所述的磁场传感器封装件，还包括：
封装材料，其中所述第一半导体芯片和所述集成电路二者均被封装在相同的封装材料中。
14.根据权利要求13所述的磁场传感器封装件，其中所述封装材料在垂直于所述芯片载体的方向上的尺寸小于1.2mm。
15.根据权利要求2至12中任一项所述的磁场传感器封装件，还包括：
第一封装材料，其中所述第一半导体芯片被封装在所述第一封装材料中；以及
第二封装材料，与所述第一封装材料分离，其中所述集成电路被封装在所述第二封装材料中。
16.根据前述权利要求中任一项所述的磁场传感器封装件，其中所述磁场传感器封装件被设计为相对于反偏置磁体能够以顶部读取配置被布置，而且能够以侧部读取配置被布置。
17.根据前述权利要求中任一项所述的磁场传感器封装件，其中
所述磁场传感器封装件被布置在反偏置磁体上；
所述磁场传感器相对于发送器元件被布置；
所述磁场传感器被设计为用于获取所述发送器元件的速度；并且
所述磁场传感器封装件与所述发送器元件通过气隙分离。
18.根据权利要求2至17中任一项所述的磁场传感器封装件，其中所述第一半导体芯片的电接触部和所述集成电路的电接触部通过键合线接触。
19.根据前述权利要求中任一项所述的磁场传感器封装件，其中所述集成无源部件被设计为用于在超过160℃的温度下工作。
20.根据前述权利要求中任一项所述的磁场传感器封装件，其中所述磁场传感器封装件不具有无源SMD部件。
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US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
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