CN111863768A - TSV adapter plate with micro-channel heat dissipation function and preparation method thereof - Google Patents

TSV adapter plate with micro-channel heat dissipation function and preparation method thereof Download PDF

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Publication number
CN111863768A
CN111863768A CN202010885806.9A CN202010885806A CN111863768A CN 111863768 A CN111863768 A CN 111863768A CN 202010885806 A CN202010885806 A CN 202010885806A CN 111863768 A CN111863768 A CN 111863768A
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China
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micro
channel
plate body
adapter plate
heat dissipation
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CN202010885806.9A
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朱家昌
张爱兵
王刚
吉勇
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CETC 58 Research Institute
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CETC 58 Research Institute
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Priority to CN202010885806.9A priority Critical patent/CN111863768A/en
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0231—Manufacturing methods of the redistribution layers
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
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    • H01L2224/02333—Structure of the redistribution layers being a bump
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02381—Side view

Abstract

The invention discloses a TSV adapter plate with a micro-channel heat dissipation function and a preparation method thereof, belonging to the technical field of integrated circuit packaging, and comprising an adapter plate body, wherein a micro-channel plate body groove is concavely arranged in the adapter plate body; a micro-channel plate body formed by bonding a micro-channel inlet and a micro-channel outlet and a micro-channel is arranged in the groove of the micro-channel plate body, and the micro-channel plate body is connected with the switching plate body through a switching plate bonding body; an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body. According to the invention, the micro-channel plate body is embedded in the switching plate body, the TSV switching plate with the micro-channel plate body embedded inside is formed, the defect that the TSV switching plate body is limited by the traditional heat dissipation capability is overcome, the active heat dissipation capability of the switching plate body is endowed, the heat dissipation level of the switching plate body is effectively improved, the heat dissipation capability of the TSV switching plate body can be effectively increased, the 2.5D/3D system-level packaging with high power density is realized, and the safety and reliability are realized.

Description

TSV adapter plate with micro-channel heat dissipation function and preparation method thereof
Technical Field
The invention relates to the technical field of integrated circuit packaging, in particular to a TSV adapter plate with a micro-channel heat dissipation function and a preparation method thereof.
Background
With the development of electronic products in the directions of miniaturization, high performance, high reliability and the like, the system integration level is also increasingly improved. Under the circumstances, the way of improving the performance by further reducing the feature size of the integrated circuit and the line width of the interconnection line is limited by the physical characteristics of the material and the equipment process, the conventional moore's law has been difficult to develop, and thus, 2.5D/3D integration technology based on the TSV is proposed.
The ITRS (International Technology Roadmap for Semiconductors) report indicates that when the gate width of a silicon transistor reaches 10nm, the energy density of a single high-performance chip will exceed 100W/cm2(ii) a If 2.5D/3D high-density integration based on TSV is performed on a high-performance chip, high-power points are distributed in a three-dimensional space, and the energy density is the sum of the energy densities of stacked chips, which is far higher than the heat dissipation capability of the existing heat dissipation mode, and how to perform effective heat dissipation becomes a significant challenge in research and development and application of a 2.5D/3D integration technology. Therefore, in order to meet the development requirements of high performance and high heat dissipation of a 2.5D/3D microelectronic system, it is urgently needed to develop an embedded TSV adapter plate structure with a micro-channel heat dissipation function.
Disclosure of Invention
The invention aims to provide a TSV adapter plate with a micro-channel heat dissipation function and a preparation method thereof, and aims to solve the problem that the existing TSV adapter plate structure is poor in heat dissipation function.
In order to solve the above technical problems, the present invention provides a TSV interposer with a microchannel heat dissipation function, comprising:
the micro-channel plate body groove is concavely arranged in the adapter plate body;
the micro-channel plate body is arranged in the groove of the micro-channel plate body;
an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body.
Optionally, the micro flow channel plate body includes a micro flow channel inlet and outlet and a micro flow channel, and the micro flow channel inlet and outlet and the micro flow channel are bonded through a bonding layer.
Optionally, the depth of the micro flow channel plate body groove does not exceed the thickness of the adapter plate body; the depth of the inlet and the outlet of the micro-channel does not exceed the depth of the plate body groove of the micro-channel; the thickness of the micro-channel is not more than the depth of the micro-channel plate body groove.
Optionally, the material of the bonding layer includes gold, copper, tin-lead, tin-silver-copper, and organic resin.
Optionally, the micro-channel plate body is fixed in the micro-channel plate body groove through an adapter plate bonding body.
Optionally, a through hole is formed in the adapter plate body, a connector is filled in the through hole, and the upper rewiring layer and the lower rewiring layer are electrically connected through the connector.
Optionally, the materials of the adapter plate body include silicon and glass.
Optionally, a plurality of array bumps are arranged on the lower rewiring layer, and the array bumps are electrically connected with the lower rewiring layer.
Optionally, the structure of the micro flow channel includes a straight line type, an S-type and a zigzag line type.
The invention also provides a preparation method of the TSV adapter plate with the micro-channel heat dissipation function, which comprises the following steps:
providing a substrate, and manufacturing a plurality of adapter plate bodies with required pitch and depth-to-width ratio on the substrate;
manufacturing a through hole penetrating through the substrate and a required micro-channel plate body groove on each adapter plate body; the size of the micro-channel plate body groove is determined according to the requirement, and the depth of the micro-channel plate body groove does not exceed that of the switching plate body;
providing the substrate again to manufacture the inlet and outlet of the micro-channel and the micro-channel; the depth of the inlet and outlet of the micro-channel does not exceed the plate body groove of the micro-channel; the thickness of the micro-channel does not exceed the depth of the plate body groove of the micro-channel; the structure of the micro-channel comprises a linear type, an S type and a broken line type;
bonding the inlet and outlet of the micro channel and the micro channel through a bonding layer to form a micro channel plate body;
embedding the micro-channel plate body into the groove of the micro-channel plate body through the adapter plate bonding body, and filling the through hole with a connecting body;
an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body; the upper rewiring layer and the lower rewiring layer are electrically connected through a connecting body;
and manufacturing a plurality of array bumps on the surface of the lower rewiring layer, wherein the array bumps are electrically connected with the lower rewiring layer.
The invention provides a TSV adapter plate with a microchannel heat dissipation function and a preparation method thereof, wherein the TSV adapter plate comprises an adapter plate body, and a microchannel plate body groove is concavely arranged in the adapter plate body; a micro-channel plate body formed by bonding a micro-channel inlet and a micro-channel outlet and a micro-channel is arranged in the groove of the micro-channel plate body, and the micro-channel plate body is connected with the switching plate body through a switching plate bonding body; an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body.
According to the invention, the micro-channel plate body is embedded in the switching plate body, the TSV switching plate with the micro-channel plate body embedded inside is formed, the defect that the TSV switching plate body is limited by the traditional heat dissipation capability is overcome, the active heat dissipation capability of the switching plate body is endowed, the heat dissipation level of the switching plate body is effectively improved, the heat dissipation capability of the TSV switching plate body can be effectively increased, the 2.5D/3D system-level packaging with high power density is realized, and the safety and reliability are realized.
Drawings
FIG. 1 is a schematic structural diagram of a TSV adapter plate with a microchannel heat dissipation function according to the present invention;
FIG. 2 is a schematic view of the structure of the microchannel plate;
fig. 3 is a schematic diagram of an adapter plate body prepared from a substrate;
FIG. 4 is a schematic view of a microfluidic port prepared through a substrate;
FIG. 5 is a schematic view of a micro flow channel prepared by a substrate;
fig. 6 is a schematic view of the micro flow channel plate being placed in the adapter plate body;
fig. 7 is a schematic diagram of upper and lower redistribution layers prepared on the upper and lower surfaces of the interposer body.
Detailed Description
The TSV interposer with micro-channel heat dissipation function and the method for manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Example one
The invention provides a TSV adapter plate with a micro-channel heat dissipation function, as shown in figure 1, the TSV adapter plate comprises an adapter plate body 1, and the adapter plate body 1 is made of silicon or glass. The switching plate body 1 is provided with a micro-channel plate body groove (not shown in fig. 1) in a concave manner, and the depth of the micro-channel plate body groove is not more than the thickness of the switching plate body 1. The micro-channel plate body 4 is fixedly arranged in the micro-channel plate body groove through the adapter plate bonding body 8, the TSV adapter plate with the micro-channel plate body embedded inside is formed, the adapter plate is endowed with active heat dissipation capacity, the heat dissipation level of the adapter plate is effectively improved, and the requirements of high-performance and high-heat-dissipation packaging of a 2.5D/3D microelectronic system can be met.
As shown in fig. 2, which is a schematic structural diagram of a micro flow channel plate 4, the micro flow channel plate 4 includes a micro flow channel inlet/outlet 5 and a micro flow channel 6, and the micro flow channel inlet/outlet 5 and the micro flow channel 6 are bonded by a bonding layer 7. The structure of the micro flow channel 6 may be a linear type, an S-type, a zigzag type, or other shapes. The material of the bonding layer 7 comprises gold, copper, tin-lead, tin-silver and tin-silver-copper. The depth of the micro-channel inlet and outlet 5 is not more than that of the micro-channel plate body groove 3; the thickness of the micro-channel 6 is not more than the depth of the micro-channel plate body groove 3.
With reference to fig. 1, an upper redistribution layer 9 and a lower redistribution layer 11 are respectively formed on the upper surface and the lower surface of the interposer 1. The through hole 2 is formed in the adapter plate body 1, the connecting body 10 is filled in the through hole 2, and the upper rewiring layer 9 and the lower rewiring layer 11 are electrically connected through the connecting body 10. A through hole 2 is formed in the adapter plate body 1, a connecting body 10 is filled in the through hole 2, and the upper rewiring layer 9 and the lower rewiring layer 11 are electrically connected through the connecting body 10. The lower rewiring layer 11 is provided with a plurality of array bumps 12, and the array bumps 12 are electrically connected with the lower rewiring layer 11.
Example two
The invention provides a preparation method of a TSV adapter plate with a micro-channel heat dissipation function, which comprises the following steps:
as shown in fig. 3, providing a substrate 13, wherein the material of the substrate 13 is silicon, glass or other materials; manufacturing a plurality of adapter plate bodies 1 which are distributed in an array and have the required pitch and depth-to-width ratio on the substrate 13 by adopting a conventional TSV process;
a through hole 2 is formed in each adapter plate body 1, and the through hole 2 penetrates through the substrate 13. A required micro-channel plate body groove 3 is manufactured on each adapter plate 1 by utilizing a conventional etching process, as shown in fig. 3; the size of the micro-channel plate body groove 3 is determined according to the requirement, and the depth of the micro-channel plate body groove does not exceed the thickness of the adapter plate body 1;
as shown in fig. 4, a substrate 13 is newly provided, and the material of the substrate 13 is silicon, glass or other materials; the micro flow channel inlet/outlet 5 having a desired size is formed on the substrate 13 by a conventional etching process. In fig. 4, a plurality of micro flow channel inlets and outlets 5 distributed in an array are obtained on the substrate 13, and the independent micro flow channel inlets and outlets 5 are obtained by cutting through a conventional scribing process, wherein the depth of the micro flow channel inlets and outlets 5 is not more than the depth of the micro flow channel plate body groove 3;
as shown in fig. 5, a substrate 13 is newly provided, and the material of the substrate 13 is silicon, glass or other materials; the micro flow channel 6 with the required structure and the depth-to-width ratio is manufactured on the substrate 13 by adopting a conventional etching process. In fig. 5, a plurality of micro flow channels 6 distributed in an array are obtained on the substrate 13, and the independent micro flow channels 6 are obtained by cutting through a conventional scribing process, wherein the thickness of the micro flow channels 6 is not more than the depth of the micro flow channel plate body grooves 3, and the structures of the micro flow channels 6 are linear, S-shaped, broken line-shaped and the like;
referring to fig. 2, a bonding layer 7 is formed on the surfaces of the inlet/outlet 5 and the micro flow channel 6 by electroplating, printing and bonding, and the inlet/outlet 5 and the micro flow channel 6 are bonded by the bonding layer 7 by a bonding process such as thermocompression bonding and reflow bonding to form an independent micro flow channel plate 4. In fig. 2, the size of the microchannel plate 4 does not exceed the size of the microchannel plate grooves 3; the thickness of the bonding layer 7 is determined according to the material of the bonding layer, the bonding process and the product requirements, and the material of the bonding layer 7 may be gold, copper, tin-lead, tin-silver-copper, organic resin and the like.
As shown in fig. 6, the microchannel plate 4 shown in fig. 2 is embedded in the microchannel plate 3, and the microchannel plate 4 is fixedly bonded to the adapter plate 1 by the adapter plate bonding member 8. The adapter plate bonding body 8 is made of common bonding materials such as bonding glue and alloy sheets. In fig. 6, a connecting body 10 may be filled in a through hole 2 of an adapter plate body 1 through a filling process, and the connecting body 10 fills the through hole 2, specifically, the connecting body 10 may be filled by a process commonly used in the art, and a detailed process is not repeated here;
as shown in fig. 7, an upper rewiring layer 9 and a lower rewiring layer 11 are respectively manufactured on the upper surface and the lower surface of the interposer body 1 by a process of photolithography but not limited to photolithography; the upper rewiring layer 9 and the lower rewiring layer 11 are electrically connected by a connector 10; the upper rewiring layer 9 covers the micro-channel plate body 4;
as shown in fig. 1, a laser drilling process, but not limited to laser drilling, is adopted to form a through hole at the position of the micro channel inlet/outlet 5, and a standard ball-planting process is adopted to manufacture an array bump 12 on the lower redistribution layer 11 to achieve signal extraction of the adapter plate body 1, wherein the size of the array bump 12 is determined according to the diameter and pitch of a pad on the surface of the adapter plate body 1. The material of the array bump 12 may be tin-lead, tin-silver-copper, and the like.
According to the manufacturing method provided by the invention, the micro-channel plate body 4 with the efficient active heat dissipation function is embedded in the adapter plate body 1, so that the heat dissipation capability of the adapter plate body 1 is effectively improved, and the requirements of high-performance and high-heat-dissipation packaging of a 2.5D/3D microelectronic system are met.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (10)

1. The utility model provides a TSV keysets that possesses microchannel heat dissipation function which characterized in that includes:
the device comprises a switching plate body (1), wherein a micro-channel plate body groove (3) is concavely arranged in the switching plate body (1);
a micro flow channel plate body (4) arranged in the micro flow channel plate body groove (3);
an upper rewiring layer (9) and a lower rewiring layer (11) are respectively manufactured on the upper surface and the lower surface of the adapter plate body (1).
2. The TSV adapter plate having the micro channel heat dissipation function according to claim 1, wherein the micro channel plate body (4) comprises a micro channel inlet/outlet (5) and a micro channel (6), and the micro channel inlet/outlet (5) and the micro channel (6) are bonded by a bonding layer (7).
3. The TSV adapter plate with microchannel heat dissipation function of claim 2, wherein the depth of the microchannel plate body groove (3) does not exceed the thickness of the adapter plate body (1); the depth of the micro-channel inlet and outlet (5) is not more than that of the micro-channel plate body groove (3); the thickness of the micro-channel (6) is not more than the depth of the micro-channel plate body groove (3).
4. The TSV adapter plate with micro channel heat dissipation function of claim 2, wherein the material of the bonding layer (7) comprises gold, copper, tin-lead, tin-silver-copper and organic resin.
5. The TSV adapter plate having micro-channel heat dissipation function of claim 1, wherein the micro-channel plate body (4) is fixed in the micro-channel plate body groove (3) by an adapter plate adhesive (8).
6. The TSV adapter plate with micro-channel heat dissipation function of claim 1, wherein a through hole (2) is formed in the adapter plate body (1), a connector (10) is filled in the through hole (2), and the upper redistribution layer (9) and the lower redistribution layer (11) are electrically connected through the connector (10).
7. The TSV adapter plate with microchannel heat dissipation function of claim 1, wherein the material of the adapter plate body (1) comprises silicon and glass.
8. The TSV adapter plate with micro-channel heat dissipation function of claim 1, wherein a plurality of array bumps (12) are formed on the lower redistribution layer (11), and the array bumps (12) are electrically connected to the lower redistribution layer (11).
9. The TSV adapter plate having a microchannel heat dissipation function according to claim 1, wherein the structure of the microchannel (6) includes a straight line type, an S-type and a zigzag type.
10. A preparation method of a TSV adapter plate with a micro-channel heat dissipation function is characterized by comprising the following steps:
providing a substrate, and manufacturing a plurality of adapter plate bodies with required pitch and depth-to-width ratio on the substrate;
manufacturing a through hole penetrating through the substrate and a required micro-channel plate body groove on each adapter plate body; the size of the micro-channel plate body groove is determined according to the requirement, and the depth of the micro-channel plate body groove does not exceed that of the switching plate body;
providing the substrate again to manufacture the inlet and outlet of the micro-channel and the micro-channel; the depth of the inlet and outlet of the micro-channel does not exceed the plate body groove of the micro-channel; the thickness of the micro-channel does not exceed the depth of the plate body groove of the micro-channel; the structure of the micro-channel comprises a linear type, an S type and a broken line type;
bonding the inlet and outlet of the micro channel and the micro channel through a bonding layer to form a micro channel plate body;
embedding the micro-channel plate body into the groove of the micro-channel plate body through the adapter plate bonding body, and filling the through hole with a connecting body;
an upper rewiring layer and a lower rewiring layer are respectively manufactured on the upper surface and the lower surface of the adapter plate body; the upper rewiring layer and the lower rewiring layer are electrically connected through a connecting body;
and manufacturing a plurality of array bumps on the surface of the lower rewiring layer, wherein the array bumps are electrically connected with the lower rewiring layer.
CN202010885806.9A 2020-08-28 2020-08-28 TSV adapter plate with micro-channel heat dissipation function and preparation method thereof Pending CN111863768A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117219518A (en) * 2023-11-07 2023-12-12 之江实验室 Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof
CN117219518B (en) * 2023-11-07 2024-04-23 之江实验室 Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117219518A (en) * 2023-11-07 2023-12-12 之江实验室 Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof
CN117219518B (en) * 2023-11-07 2024-04-23 之江实验室 Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof

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