CN111863739B - RF (radio frequency) communication module and manufacturing method thereof - Google Patents

RF (radio frequency) communication module and manufacturing method thereof Download PDF

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Publication number
CN111863739B
CN111863739B CN202010744455.XA CN202010744455A CN111863739B CN 111863739 B CN111863739 B CN 111863739B CN 202010744455 A CN202010744455 A CN 202010744455A CN 111863739 B CN111863739 B CN 111863739B
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radio frequency
communication module
wires
pads
manufacturing
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CN111863739A (en
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侯新飞
崔文杰
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Shenzhen Bontest Testing Technology Co ltd
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Shenzhen Bontest Testing Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The invention provides an RF radio frequency communication module and a manufacturing method thereof. The RF chip is arranged in the inverted convex groove of the substrate, so that the interference of the RF chip to other chips on the substrate can be prevented, the signal transmission of the lead can be ensured, and the reliability and the flexibility of the electric connection of the lead are ensured. The invention emphasizes the welding mode of the connecting points of the wires, and also utilizes the extra redundant bonding pads to carry out one-time arrangement of the wires, thereby not only ensuring the flexibility of the wires, but also realizing the multifunctional electric connection of the RF chip to other chips.

Description

RF (radio frequency) communication module and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor packaging test, in particular to an RF (radio frequency) communication module and a manufacturing method thereof.
Background
In the whole radio frequency communication, the following frequencies are mainly included: transmission frequency, reception frequency, intermediate frequency, and baseband frequency. The baseband frequency is the signal frequency used to modulate the data. The real transmission frequency is much higher than the baseband frequency, and the general spectrum range is 500MHz to 38GHz, and the data signal is transmitted at this high frequency. Generally, a radio frequency system has a very powerful function of transmitting a modulated signal, and even in the presence of an interfering signal and a blocking signal, the system can transmit at the highest quality and receive the modulated signal at the best sensitivity. At the transmitting end, the intermediate frequency is often used to filter out all spurious data and noise that may be generated during the conversion from baseband to intermediate frequency.
In radio frequency communication, it is often necessary to integrate a radio frequency chip and other chips, including a controller, an amplifier, a filter, etc., which need to be electrically connected to each other when they are integrated, and when the connection is implemented by a wiring layer, electromagnetic shielding is not easy to avoid, and when the connection is made by using a bonding wire, flexibility is not sufficient.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for manufacturing an RF radio frequency communication module, comprising the steps of:
(1) providing a ceramic substrate, wherein the upper surface of the ceramic substrate is provided with a groove which is in an inverted convex shape and is provided with a step surface, the step surface is provided with a plurality of first bonding pads, and the upper surface is provided with a plurality of second bonding pads;
(2) fixing an RF chip on the bottom surface of the groove, wherein the RF chip is provided with a plurality of third bonding pads;
(3) electrically connecting the plurality of third pads to the plurality of first pads, respectively, with a plurality of first wires;
(4) sealing the plurality of first leads by using first sealant, wherein the top ends of the plurality of first leads are exposed out of the top of the first sealant to form a plurality of first joints;
(5) electrically connecting the plurality of first contacts to the plurality of second pads, respectively, using a plurality of second conductive lines;
(6) and sealing the plurality of second conducting wires by using a second sealant.
According to an embodiment of the present invention, there is a first wiring layer in the ceramic substrate, the first wiring layer electrically connecting at least a part of the plurality of first pads.
According to an embodiment of the present invention, the lower surface of the ceramic substrate has a ground metal layer, and the first circuit layer includes a conductive path electrically connected to the ground metal layer.
According to an embodiment of the present invention, the plurality of first pads includes at least one redundancy pad, and the redundancy pad is insulated from the first line layer.
According to an embodiment of the present invention, in the step (5), the plurality of second wires are directly welded at the plurality of first junctions, respectively.
According to an embodiment of the present invention, the second sealant is a laser activated polymer material.
According to an embodiment of the present invention, in step (5), further comprising laser activating the laser activated polymer material to form an activated metal layer, the activated metal layer electrically connecting at least two of the plurality of first contacts.
According to an embodiment of the present invention, the plurality of second wires includes at least a wire directly soldered to the activated metal layer.
According to the embodiment of the invention, an air gap which is not filled by the first sealing adhesive is arranged between the side surface of the RF chip and the side surface of the groove.
The invention also provides an RF communication module according to the manufacturing method.
According to the invention, the RF radio frequency chip is arranged in the inverted convex groove of the substrate, so that the interference of the RF radio frequency chip on other chips on the substrate can be prevented, the signal transmission of a lead can be ensured, and the reliability and the flexibility of the electric connection of the lead can be ensured; the invention emphasizes the welding mode of the connecting points of the wires, and also utilizes the extra redundant bonding pads to carry out one-time arrangement of the wires, thereby not only ensuring the flexibility of the wires, but also realizing the multifunctional electric connection of the RF chip to other chips.
Drawings
FIG. 1 is a cross-sectional view of an RF radio frequency communication module;
fig. 2 is a top view of the RF radio frequency communication module of the first embodiment;
fig. 3 is a top view of a second embodiment of an RF radio frequency communication module;
fig. 4 is a top view of a third embodiment of an RF radio frequency communication module;
fig. 5-9 are schematic diagrams of a method of manufacturing an RF radio frequency communication module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
An RF radio frequency communication module and a method of manufacturing the same according to the disclosed embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Referring to fig. 1 and 2, an RF communication module according to a first embodiment of the present application includes a ceramic substrate 10. The ceramic substrate 10 may be a multilayer ceramic substrate structure such as LTCC (low temperature co-fired ceramic substrate). The thickness of the ceramic substrate 10 should be greater than the thickness of the RF chip.
The ceramic substrate 10 has a first wiring layer inside, which may be formed by forming a wiring layer on a plurality of ceramic layers and sintering. The first line layer may include a plurality of metal layers and a plurality of interconnection vias (not shown). The first circuit layer includes a conductive path 14, and the conductive path 14 is connected to the ground metal layer 13 on the lower surface of the ceramic substrate 10 to form a ground shield.
The ceramic substrate 10 has a groove 11 on the upper surface, and the groove 11 is of an inverted convex shape, i.e. the upper part has a wider opening and the lower part has a narrower opening. The recess 11 has a step 12, and the step 12 has a plurality of first pads 101 thereon. Most of the first pads 101 are electrically connected to the first wiring layer, but in order to facilitate bonding of the first wires and distribution of the first wires, the plurality of first pads 101 further include redundant pads 102, and the redundant pads 102 may be plural or one, which are suspended without connecting the first wiring layer or other wirings. The redundant pad 102 is provided to ensure flexibility of the wire and reduce parasitic inductance.
On the ceramic substrate 10, there are a second wiring layer (not shown), which may be a metal wiring layer, which may be implemented by an electroplating method, and a plurality of second pads 111. The second pads 111 are electrically connected to the second circuit layer, and are disposed around the groove 11.
The RF chip 20 is fixed to the bottom of the recess 11, for example, by an adhesive layer or a solder layer. The RF chip 20 may be electrically connected to other chips, such as a filter, a controller, an amplifier, etc., and these functional chips may be disposed on the upper surface of the ceramic substrate 10 and electrically connected to the second circuit layer.
The upper surface of the RF chip has a plurality of third pads 21, and the top surfaces of the third pads 21 are lower than the upper surface of the ceramic substrate 10, and the array arrangement may have a plurality of rows.
The plurality of first wires 30 electrically connect the plurality of third pads 21 with the plurality of first pads 101, whereby the RF chip 20 can perform electrical signal transmission through the first wiring layer. At least one first conductive line 30 is bonded to the redundant pad 102. The plurality of first wires 30 may have a curved shape, and the highest point thereof may be slightly lower than the upper surface of the ceramic substrate 10 or equal to the upper surface of the ceramic substrate 10.
In order to protect the first wires 30, a first sealant 40 is coated on the plurality of wires 30, and top ends of the plurality of first wires 30 are exposed from a top of the first sealant 40 to form a plurality of first contacts S1. The first contacts S1 are exposed portions of the conductive lines. The first sealant 40 may be a photo-curable material, a thermosetting material, an adhesive material, or the like.
And, the first sealant 40 is formed by means of dropping to form an air gap C between the sidewall of the RF chip 20 and the side surface of the recess 11, and the formation of the air gap C can save materials and prevent solid contact transmission of signals.
The plurality of second conductive lines 50 electrically connect the plurality of first contacts S1 with the plurality of second pads 111, so that the RF chip 20 can perform electrical signal transmission through the second wiring layer. The plurality of second wires 50 have a curved shape, and one end thereof is soldered to the first contact S1 to form a bonding portion, and the other end thereof is soldered to the second pad 111 to form a bonding portion.
In order to protect the second wires 50, a second sealant 60 is coated on the plurality of wires 50, and top ends of the plurality of second wires 50 are exposed from a top of the second sealant 60 to form a plurality of second contacts S2. The plurality of second contacts S2 are exposed portions of the conductive lines. The material of the second sealant 60 may be a molded material with a flat planar top.
Referring to fig. 3, as another embodiment of the RF module according to the present invention, the second sealant 60 is a laser-activated polymer material, which can be activated by a laser to form an activated metal layer 70, and in this case, the activated metal layer 70 can flexibly achieve the electrical connection between the plurality of first wires 30. At this time, the second lead 50 is also directly soldered to the first contact S1.
Referring to fig. 3, as another embodiment of the RF module according to the present invention, the second sealant 60 is a laser-activated polymer material, which can be activated by a laser to form an activated metal layer 70, and in this case, the activated metal layer 70 can flexibly achieve the electrical connection between the plurality of first wires 30. And at this time, the second lead 50 may be directly soldered to the active metal layer 70 to secure a contact area for soldering and to secure reliability of electrical connection.
In order to obtain the RF radio frequency communication module, the present invention further provides a method for manufacturing an RF radio frequency communication module, comprising the steps of:
(1) providing a ceramic substrate, wherein the upper surface of the ceramic substrate is provided with a groove which is in an inverted convex shape and is provided with a step surface, the step surface is provided with a plurality of first bonding pads, and the upper surface is provided with a plurality of second bonding pads;
(2) fixing an RF chip on the bottom surface of the groove, wherein the RF chip is provided with a plurality of third bonding pads;
(3) electrically connecting the plurality of third pads to the plurality of first pads, respectively, with a plurality of first wires;
(4) sealing the plurality of first leads by using first sealant, wherein the top ends of the plurality of first leads are exposed out of the top of the first sealant to form a plurality of first joints;
(5) electrically connecting the plurality of first contacts to the plurality of second pads, respectively, using a plurality of second conductive lines;
(6) and sealing the plurality of second conducting wires by using a second sealant.
The above method will be described in detail with reference to fig. 5 to 9.
Referring to fig. 5, a ceramic substrate 10 is provided, the ceramic substrate 10 may be an LTCC substrate having an inverse convex groove 11. The recess has a step surface 12, the step surface 12 having a plurality of first pads 101 thereon and the upper surface having a plurality of second pads 111 thereon.
The ceramic substrate 10 has a first wiring layer therein, which electrically connects at least a part of the plurality of first pads 101.
The lower surface of the ceramic substrate 10 has a ground metal layer 13, and the first circuit layer includes a conductive path 14 electrically connected to the ground metal layer.
Referring next to fig. 6, an RF chip 20 is fixed to the bottom surface of the recess 11, and the RF chip 20 has a plurality of third pads 21 thereon.
Referring to fig. 7, the plurality of third pads 21 are electrically connected to the plurality of first pads 101 with a plurality of first wires 30, respectively. Wherein the plurality of first pads 101 includes at least one redundant pad 101, and the redundant pad 101 is insulated from the first circuit layer.
Referring to fig. 8, in order to protect the first conductive wires 30, a first sealant 40 is dispensed on the plurality of conductive wires 30, and top ends of the plurality of first conductive wires 30 are exposed from a top of the first sealant 40 to form a plurality of first contacts S1. The first contacts S1 are exposed portions of the conductive lines. The first sealant 40 may be a photo-curable material, a thermosetting material, an adhesive material, or the like.
The first sealant 40 is formed by dropping to form an air gap C between the sidewall of the RF chip 20 and the side surface of the recess 11, and the formation of the air gap C can save materials and prevent solid contact transmission of signals.
Referring to fig. 9 again, the plurality of first contacts S1 are electrically connected to the plurality of second pads 111 by a plurality of second wires 50, respectively; the plurality of second conductive lines 50 are sealed by the second sealant 60, and the upper ends of the second conductive lines 50 are exposed to form second contacts S2.
According to the invention, the RF radio frequency chip is arranged in the inverted convex groove of the substrate, so that the interference of the RF radio frequency chip on other chips on the substrate can be prevented, the signal transmission of a lead can be ensured, and the reliability and the flexibility of the electric connection of the lead can be ensured; the invention emphasizes the welding mode of the connecting points of the wires, and also utilizes the extra redundant bonding pads to carry out one-time arrangement of the wires, thereby not only ensuring the flexibility of the wires, but also realizing the multifunctional electric connection of the RF chip to other chips.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.

Claims (7)

1. A method of manufacturing an RF radio frequency communication module, comprising the steps of:
(1) providing a ceramic substrate, wherein the upper surface of the ceramic substrate is provided with a groove which is in an inverted convex shape and is provided with a step surface, the step surface is provided with a plurality of first bonding pads, and the upper surface is provided with a plurality of second bonding pads; the plurality of first pads comprise at least one redundant pad which is not electrically connected with the line layer;
(2) fixing an RF chip on the bottom surface of the groove, wherein the RF chip is provided with a plurality of third bonding pads;
(3) electrically connecting the plurality of third pads to the plurality of first pads, respectively, with a plurality of first wires;
(4) sealing the plurality of first leads by using first sealant, wherein the top ends of the plurality of first leads are exposed out of the top of the first sealant to form a plurality of first joints;
(5) electrically connecting the plurality of first contacts to the plurality of second pads, respectively, using a plurality of second conductive lines;
(6) sealing the plurality of second wires with a second sealant;
the second sealant is a laser activated polymer material; in step (5), further comprising laser activating the laser-activated polymer material to form an activated metal layer, the activated metal layer electrically connecting at least two of the plurality of first contacts.
2. The method of manufacturing an RF radio frequency communication module of claim 1,
the ceramic substrate is provided with a first circuit layer which is electrically connected with at least one part of the first bonding pads.
3. The method of manufacturing an RF radio frequency communication module of claim 2,
the lower surface of the ceramic substrate has a ground metal layer, and the first circuit layer includes a conductive path electrically connected to the ground metal layer.
4. The method of manufacturing an RF radio frequency communication module of claim 1,
in step (5), the plurality of second wires are directly soldered at the plurality of first junctions, respectively.
5. The method of manufacturing an RF radio frequency communication module of claim 1,
the plurality of second wires includes at least a wire directly soldered to the activated metal layer.
6. The method of manufacturing an RF radio frequency communication module of claim 1,
and an air gap which is not filled by the first sealant is arranged between the side surface of the RF chip and the side surface of the groove.
7. An RF radio frequency communication module formed by the method of manufacturing an RF radio frequency communication module of any one of claims 1 to 6.
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US5814883A (en) * 1995-10-04 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Packaged semiconductor chip
CN1832166A (en) * 2005-03-11 2006-09-13 株式会社瑞萨科技 Semiconductor device and a method for manufacturing the same

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DE10209922A1 (en) * 2002-03-07 2003-10-02 Infineon Technologies Ag Electronic module, use of electronic modules to be separated and processes for their production
TWM266539U (en) * 2004-11-05 2005-06-01 Altus Technology Inc Integrate circuit chip encapsulation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814883A (en) * 1995-10-04 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Packaged semiconductor chip
CN1832166A (en) * 2005-03-11 2006-09-13 株式会社瑞萨科技 Semiconductor device and a method for manufacturing the same

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CN111863739A (en) 2020-10-30

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