CN111856138A - Device and method for measuring resistivity of micro-scale metal sample - Google Patents
Device and method for measuring resistivity of micro-scale metal sample Download PDFInfo
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- CN111856138A CN111856138A CN202010610197.6A CN202010610197A CN111856138A CN 111856138 A CN111856138 A CN 111856138A CN 202010610197 A CN202010610197 A CN 202010610197A CN 111856138 A CN111856138 A CN 111856138A
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000002184 metal Substances 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 25
- 238000012360 testing method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000008859 change Effects 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000233 ultraviolet lithography Methods 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
Abstract
The invention relates to a device and a method for measuring the resistivity of a micro-scale metal sample, wherein a test electrode and a temperature measuring electrode are firstly manufactured on a substrate, the sample is placed on the substrate and is connected with the test electrode, and the test electrode is connected with a four-wire method resistance measuring circuit; and (3) placing the substrate on a heating table, placing the substrate and the heating table into a vacuum chamber, and drawing a curve of the change relation of the resistivity with the temperature by adjusting the temperature. The invention can measure the resistivity of samples with various shapes and smaller sizes, and selects different processes for depositing electrodes according to the size and the shape of the samples.
Description
Technical Field
The invention belongs to the field of resistivity test of metal samples, relates to a four-wire method technology, and particularly relates to a device and a method for measuring the resistivity of a micro-scale metal sample based on a four-wire method.
Background
At present, a lot of methods and devices are used for measuring the resistivity of a metal sample, but most of the methods are directed to a sample with a large size and have certain requirements on the shape, thickness, surface state and the like of the sample, while the methods are less directed to a micro-scale metal sample, and the methods are also directed to a method for measuring the size of the sample in millimeter level and have the same requirements on the shape of the sample. In order to measure the resistivity of samples with various shapes and smaller sizes, a new method needs to be developed for measurement.
Four wire connection as shown in fig. 1, two requirements are connected: each test point is provided with an excitation line and a detection line which are strictly separated to form independent loops respectively; at the same time, the detection line must be connected to a test loop with very high input impedance, so that the current flowing through the detection line is very small and is approximately zero. The excitation line is a current supply circuit, the detection line is a voltage measurement circuit, and the current circuit and the voltage circuit are independent. The two terminals of the current supply loop and the two terminals of the voltage measuring loop are four terminals in total, so the test is called four-wire test. V1I 1 xR (because I2 (small current) is multiplied by small resistance to obtain smaller voltage drop), because the internal impedance of the voltmeter is very high (m omega level), and is far greater than the feeder resistances R3 and R4 (omega level) of the voltage measuring loop, almost all the current flows through R, the current I2 flowing through the voltmeter is almost zero, the measured voltage is almost the voltage drop of R, the feeder resistance can be completely ignored, the measured R is almost similar to R, therefore, the tiny resistance value of the measured resistance can be accurately measured, and the measuring accuracy of the four-wire test can reach m omega level. In the four-terminal test (fig. 2), the current supply circuit and the voltage measurement circuit are independent (4 terminals are counted as the terminal of the current supply circuit 2 and the terminal of the voltage measurement circuit 2), and because the internal impedance of the voltage measurement meter is very high, the flat cable impedance, the contact impedance and the internal impedance in the voltage measurement circuit can be ignored, so that the tiny resistance value of the measured resistor can be accurately measured.
The advantage of the four-wire method is that not only the lead resistance and the contact resistance are eliminated, but also the influence of the thermal electromotive force can be greatly reduced. Because the current terminal is a heating source, but under the action of the constant current after the current terminal is separated, how large a resistor is connected in series to the bottom, even a battery is connected in series, the resistor is constant current, and therefore the current terminal can also be used in common. On the other hand, the two voltage terminals do not generate heat because no current flows, and the distance between the two voltage terminals and the current terminal generating heat is kept constant, so that the heat conduction can be reduced, and the wiring terminal can adopt low-heat.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a method for measuring the resistivity of a micro-scale metal sample based on a four-wire method, which can measure the resistivity of samples with various shapes and smaller sizes.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a device for measuring the resistivity of a micro-scale metal sample comprises a substrate, wherein a graphical test electrode is arranged on the substrate, a sample to be measured is arranged on the substrate and is connected with the test electrode, and the test electrode is connected with a resistance measuring circuit.
Moreover, the patterned test electrode is manufactured by adopting a photoetching method or a method of combining a metal physical mask plate with physical vapor deposition or an ink-jet printing method.
Furthermore, the apparatus includes a heater for changing the temperature of the sample. The heater is disposed below the substrate.
Moreover, the device also comprises a vacuum chamber for avoiding sample oxidation, and the substrate is arranged in the vacuum chamber.
And the substrate is provided with a temperature measuring resistor, and the temperature measuring electrode is connected with a temperature display and can display real-time temperature.
Moreover, a cover plate is mounted above the base plate.
A method for measuring the resistivity of a micro-scale metal sample based on a four-wire method comprises the steps of firstly manufacturing a test electrode on a substrate, placing the sample on the substrate, connecting the sample with the test electrode, connecting the test electrode with a four-wire method resistance measuring circuit, and continuously measuring the resistivity of the sample.
A method for measuring the resistivity of a micro-scale metal sample based on a four-wire method comprises the steps of firstly manufacturing a test electrode and a temperature measuring electrode on a substrate, placing the sample on the substrate and connecting the sample with the test electrode, wherein the test electrode is connected with a four-wire method resistance measuring circuit; and (3) placing the substrate on a heating table, placing the substrate and the heating table into a vacuum chamber, and drawing a curve of the change relation of the resistivity with the temperature by adjusting the temperature.
The invention has the advantages and positive effects that:
1. the invention can measure the resistivity of samples with various shapes and smaller sizes, and selects different processes for depositing electrodes according to the size and the shape of the samples.
2. The invention is provided with the heating table, and can measure the relation of the conductivity of the sample along with the temperature change in situ.
3. The temperature measuring electrode is deposited on the substrate, so that the actual temperature of the sample can be accurately measured, and the measurement accuracy is improved.
4. The invention adopts a four-wire method to measure the resistance, can avoid the influence of contact resistance and line resistance on the test result and improve the test accuracy.
5. The present invention can manufacture a vacuum degree up to 10 by using molecular pump set-4And the Pa vacuum test environment avoids the sample from being oxidized or damaged due to the reaction of the sample and the gas in the air in the test process.
Drawings
FIG. 1 is a circuit diagram of a four-wire method for measuring resistance;
FIG. 2 is a schematic diagram of resistance measurement by a four-wire method;
FIG. 3 is a schematic view of the structure of the device of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following embodiments, which are illustrative only and not limiting, and the scope of the present invention is not limited thereby.
The device for measuring the resistivity of the micro-scale metal sample comprises a substrate 8, a heating table 9 and a vacuum chamber 4, wherein the vacuum chamber is connected with a molecular pump 3. A heating table and a substrate are arranged in a vacuum chamber, and patterned electrodes are arranged on the upper surface of the substrate and comprise a test electrode 2 and a temperature measuring electrode 7. The sample 1 to be tested is connected with the test electrode, the test electrode is connected with the resistance measuring circuit, and the temperature measuring electrode is connected with the temperature display, so that the real-time temperature can be displayed.
A cover plate 5 is arranged above the base plate, four limiting columns 6 are symmetrically arranged at four corners of the bottom surface of the cover plate, and four limiting holes are arranged at the positions, corresponding to the four limiting columns, of the four corners of the base plate.
The heating table is used for heating a test original and a sample, can be used for testing the resistivity of the sample at different temperatures, and draws a change relation curve of the resistivity along with the temperature.
The temperature measuring electrode accurately records the actual temperature of the sample by measuring the resistance of the electrode by utilizing the linear relation of the resistance of the electrode material along with the change of the temperature.
The vacuum chamber is used for preventing the sample from being oxidized in the temperature rising process.
The substrate is made of insulating high-temperature-resistant materials such as mica, quartz, polyether-ether-ketone and the like or high-temperature-resistant materials with passivation layers on the surfaces such as silicon oxide sheets and the like, and the patterned electrode is manufactured on the substrate so as to achieve the purpose of measuring the miniaturized metal sample.
The patterned electrode material can be prepared by the following methods:
1. the patterned template is manufactured by common ultraviolet lithography or electron beam exposure lithography, and then metal materials such as Au, Pt and the like are deposited by using a physical vapor deposition (such as magnetron sputtering and electron beam evaporation) method. The minimum electrode width can be up to 2 microns (ultraviolet lithography) and 200nm (electron beam exposure), and the minimum in-plane dimension of the sample can be measured to be 100 microns by 10 microns.
2. The electrode is prepared by combining a metal physical mask plate and physical vapor deposition, the minimum width of the electrode can reach 50 mu m, and the minimum size of the measurable sample plane can reach 1mm 20 mu m.
3. And printing conductive ink on the insulating substrate by using an ink-jet printing technology, wherein the conductive ink is made of Ag-doped conductive solution. The minimum electrode width can reach 100 microns, and the minimum size of the sample plane can be measured to be 2mm by 20 microns.
A method for measuring the resistivity of a micro-scale metal sample based on a four-wire method comprises the steps of firstly manufacturing a test electrode and a temperature measuring electrode on a substrate; placing a sample on a substrate, connecting the sample with a test electrode, and connecting the test electrode with a four-wire resistance measurement circuit; the substrate is placed on the heating table, the substrate and the heating table are placed in a vacuum chamber, the resistivity of the sample is continuously measured, and a change relation curve of the resistivity along with the temperature can be drawn by adjusting the temperature. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the inventive concept, and these changes and modifications are all within the scope of the present invention.
Claims (8)
1. An apparatus for measuring the resistivity of a microscale metal sample, comprising: the device comprises a substrate, wherein a graphical test electrode is arranged on the substrate, a sample to be tested is arranged on the substrate and is connected with the test electrode, and the test electrode is connected with a resistance measuring circuit.
2. The apparatus for measuring resistivity of a micro-scale metal sample according to claim 1, wherein: the patterned test electrode is manufactured by adopting a photoetching method or a method of combining a metal physical mask plate with physical vapor deposition or an ink-jet printing method.
3. The apparatus for measuring resistivity of a micro-scale metal sample according to claim 1, wherein: the device also comprises a heater for changing the temperature of the sample, wherein the heater is arranged below the substrate and is controlled by the temperature controller.
4. The apparatus for measuring resistivity of a micro-scale metal sample according to claim 1 or 3, wherein: the device also comprises a vacuum chamber for avoiding sample oxidation, and the substrate is arranged in the vacuum chamber.
5. The apparatus for measuring resistivity of a micro-scale metal sample according to claim 1 or 2, wherein: the substrate is provided with a temperature measuring resistor, and the temperature measuring electrode is connected with a temperature display.
6. The apparatus for measuring resistivity of a micro-scale metal sample according to claim 1 or 3, wherein: a cover plate is mounted above the base plate.
7. A method for measuring the resistivity of a micro-scale metal sample based on a four-line method is characterized by comprising the following steps: firstly, a test electrode is manufactured on a substrate, a sample is placed on the substrate and is connected with the test electrode, and the test electrode is connected with a four-wire resistance measuring circuit to continuously measure the resistivity of the sample.
8. A method for measuring the resistivity of a micro-scale metal sample based on a four-line method is characterized by comprising the following steps: firstly, manufacturing a test electrode and a temperature measuring electrode on a substrate, placing a sample on the substrate, connecting the sample with the test electrode, and connecting the test electrode with a four-wire resistance measuring circuit; and (3) placing the substrate on a heating table, placing the substrate and the heating table into a vacuum chamber, and drawing a curve of the change relation of the resistivity with the temperature by adjusting the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010610197.6A CN111856138A (en) | 2020-06-30 | 2020-06-30 | Device and method for measuring resistivity of micro-scale metal sample |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010610197.6A CN111856138A (en) | 2020-06-30 | 2020-06-30 | Device and method for measuring resistivity of micro-scale metal sample |
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| Publication Number | Publication Date |
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| CN111856138A true CN111856138A (en) | 2020-10-30 |
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| CN202010610197.6A Pending CN111856138A (en) | 2020-06-30 | 2020-06-30 | Device and method for measuring resistivity of micro-scale metal sample |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186411A (en) * | 1996-09-30 | 1998-07-01 | 赫罗伊斯传感器－奈特股份有限公司 | Manufacture of printed circuit board with contacting area, and connecting method and use |
| CN101692111A (en) * | 2009-10-13 | 2010-04-07 | 中国科学院上海光学精密机械研究所 | Device and method for testing resistivity of tin dioxide electrode |
| CN102539932A (en) * | 2010-10-19 | 2012-07-04 | 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 | Conductivity sensor |
| CN107765092A (en) * | 2016-08-22 | 2018-03-06 | 兴亚株式会社 | Probe unit |
| CN109581060A (en) * | 2018-12-20 | 2019-04-05 | 云南大学 | A method of in uneven temperature test material conductivity off field |
-
2020
- 2020-06-30 CN CN202010610197.6A patent/CN111856138A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186411A (en) * | 1996-09-30 | 1998-07-01 | 赫罗伊斯传感器－奈特股份有限公司 | Manufacture of printed circuit board with contacting area, and connecting method and use |
| CN101692111A (en) * | 2009-10-13 | 2010-04-07 | 中国科学院上海光学精密机械研究所 | Device and method for testing resistivity of tin dioxide electrode |
| CN102539932A (en) * | 2010-10-19 | 2012-07-04 | 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 | Conductivity sensor |
| CN107765092A (en) * | 2016-08-22 | 2018-03-06 | 兴亚株式会社 | Probe unit |
| CN109581060A (en) * | 2018-12-20 | 2019-04-05 | 云南大学 | A method of in uneven temperature test material conductivity off field |
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