CN111854933B - Particle vibration velocity sensor with wide response frequency band - Google Patents
Particle vibration velocity sensor with wide response frequency band Download PDFInfo
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- CN111854933B CN111854933B CN202010863143.0A CN202010863143A CN111854933B CN 111854933 B CN111854933 B CN 111854933B CN 202010863143 A CN202010863143 A CN 202010863143A CN 111854933 B CN111854933 B CN 111854933B
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- 239000002245 particle Substances 0.000 title claims abstract description 50
- 230000004044 response Effects 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 21
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000005236 sound signal Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 79
- 239000011651 chromium Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011540 sensing material Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005237 high-frequency sound signal Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H17/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves, not provided for in the preceding groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
Abstract
The invention relates to a particle vibration velocity sensor with wide response frequency band, which comprises a sensitive element, and is characterized in that the sensitive element (2) comprises: a substrate (21) having a bridge opening (211) formed therein; and a plurality of sensing wires (20) arranged in parallel on the bridge orifice (211); the sensitive wire (20) sequentially comprises a sensitive material layer (206) and a supporting layer (205) from top to bottom, and the sensitive material layer (206) is of a hollow structure. The invention adopts the hollow sensitive wire to reduce the equivalent density of the sensitive wire, thereby reducing the thermal mass of the sensitive wire, improving the structural heat exchange rate, effectively improving the upper limit of the response frequency of the sensor, expanding the response frequency band of the sensor and detecting the particle vibration velocity of the broadband sound signal without distortion.
Description
Technical Field
The invention relates to the field of sensors, in particular to a particle vibration velocity sensor with a wide response frequency band.
Background
The acoustic signal comprises two parameter values, a scalar acoustic pressure signal and a vector particle velocity signal, which respectively reflect different characteristics of the acoustic field. The sound field vector particle velocity signal carries sound wave propagation direction information, can be used for sound source positioning tracking, sound field imaging and other aspects, and has wide application prospects in various fields of aeroacoustics, hydroacoustics and the like. For scalar sound pressure signals, measurements can be made by a variety of sensors such as electret condenser microphones, piezoelectric transducers, and the like. For acoustic vector signals, the traditional measurement method generally carries out indirect measurement based on the principle of sound pressure gradient, namely, carries out gradient calculation through sound pressures detected by two microphones at a certain distance, and indirectly obtains particle vibration velocity signals. The traditional acoustic vector signal measurement method often has various problems of low measurement precision, large aperture size of the sensor array and the like.
At the end of the 90 s of the last century, related researchers in the netherlands have proposed a particle velocity sensor based on a thermal temperature difference based microelectromechanical (MEMS) process that can directly measure the particle velocity signal of sound waves. When an acoustic signal acts on the sensor, the sensor can realize the direct measurement of the acoustic wave particle vibration velocity signal through the change of the temperature of a temperature measuring beam (thermal resistance wire). The sensor based on the structure has the advantages of simple process, small array aperture, high measurement precision and the like, and has good directivity.
Currently, thermal temperature differential particle velocity sensors mainly have two structures: one is parallel and parallel, and has three heat resistance wire structures with certain interval, namely a heating wire positioned in the middle position and two sensitive wires symmetrically distributed on two sides of the heating wire; the other is a parallel and parallel structure with two heat resistance wires with a certain interval, and the two heat resistance wires are both sensitive wires and heating wires. When the sound signal acts on the particle vibration velocity sensor with the structure, the temperature of the two sensitive wires is disturbed by the influence of the sound signal, so that the resistance values of the two sensitive wires are different, and the particle vibration velocity of the sound signal is detected.
For a thermal differential particle vibration velocity sensor, both the sensor material and the sensitive wire structure have a large influence on the sensor performance. Currently, for traditional thermal temperature difference type particle vibration velocity sensors, a plurality of materials are adopted to design and manufacture sensitive wires with solid structures through MEMS (micro electro mechanical systems) process and other technological means. Wherein platinum is mostly used as a sensitive material, and silicon dioxide, silicon nitride, chromium and other materials are simultaneously selected to form a bonding layer, a bearing layer, an adhesion layer and other structures. A schematic cross-sectional structure of a conventional thermal-differential particle velocity sensor sensing filament is shown in FIG. 1.
However, the conventional thermal temperature difference type particle vibration velocity sensor based on the above structure has a limited thermal mass due to the sensitive layer material, so that the heat exchange rate is difficult to keep up with the change rate of the sound wave amplitude in response to the high-frequency sound signal, and thus a wide response frequency band cannot be realized. This causes a series of problems such as distortion of the sensor when detecting a wide frequency sound signal, and high noise in the frequency band. The defect directly affects the detection of the particle vibration velocity sensor on broadband sound signals, and limits the application scene and application range of the particle vibration velocity sensor. Microflown, etc., have expanded the response band of the thermal-differential particle velocity sensor to some extent by hardware circuits, etc., but have also introduced greater noise.
Disclosure of Invention
The invention aims to solve the technical problem of providing a particle vibration velocity sensor with high sensitivity and high signal-to-noise ratio and wide response frequency band.
The invention is realized by the following technical scheme:
A wide response band particle velocity sensor comprising a sensing element comprising:
a substrate having a bridge opening formed thereon; and
The sensitive wires are arranged on the bridge orifice in parallel;
the sensitive wire sequentially comprises a sensitive material layer and a supporting layer from top to bottom, and the sensitive material layer is of a hollow structure.
Further, the wide response band particle vibration velocity sensor, the sensing element further comprises:
A plurality of pairs of electrodes arranged on two sides of the bridge hole on the substrate;
and two ends of the sensitive wire are respectively and correspondingly connected with the electrodes at two sides of the bridge hole.
Further, the wide response band particle vibration velocity sensor, the sensing element further comprises:
and the heating wire is arranged on the bridge hole and parallel to the sensitive wire.
Further, the wide response band particle vibration velocity sensor, the sensing element further comprises:
A heating wire disposed on the bridge orifice and parallel to the sensing wire;
The two ends of the heating wire are respectively and correspondingly connected with the electrodes on the two sides of the bridge hole, and a plurality of sensitive wires are symmetrically distributed on the two sides of the heating wire.
Further, the wide response band particle velocity sensor includes an upper boundary material layer and side boundary material layers extending downward from both sides of the upper boundary material layer.
Further, in the wide-response-band particle vibration velocity sensor, the sensitive material layer further includes a lower boundary material layer connected to the lower ends of the two side boundary material layers, and the upper boundary material layer, the two side boundary material layers and the lower boundary material layer are connected to each other to surround and form a hollow structure.
Further, in the wide-response-band particle vibration velocity sensor, the upper boundary material layer, the two boundary material layers and the side edges of the supporting layer are connected, and a hollow structure is formed by surrounding.
Further, the supporting layer of the wide-response-band particle vibration velocity sensor sequentially comprises a combination layer, a bearing layer and an adhesion layer from bottom to top.
Further, in the broad-band particle vibration velocity sensor, the bonding layer is SiO 2, the bearing layer is Si 3N4, and the adhesion layer is Cr or Ti.
Further, in the particle vibration velocity sensor with wide response frequency band, the sensitive material layer is Pt or Au.
The invention has the advantages and effects that:
1. The particle vibration velocity sensor with wide response frequency band provided by the invention optimizes the structure of the sensitive wire under the conditions of not changing the topological structure of the sensor, not introducing an additional circuit and not reducing the sensitivity and the signal-to-noise ratio by MEMS and other technological means on the basis of the traditional thermal temperature difference type particle vibration velocity sensor. The sensor adopts the sensitive wires with hollow structures, reduces the equivalent density of the sensitive wires, reduces the thermal mass of the sensitive wires, improves the structural heat exchange rate, effectively improves the upper limit of the response frequency of the sensor, expands the response frequency band of the sensor, and can detect the particle vibration velocity of broadband sound signals without distortion.
2. The particle vibration velocity sensor with the wide response frequency band provided by the invention further comprises the heating wire, and the plurality of sensitive wires are symmetrically distributed on two sides of the heating wire, so that the sensitivity of the sensor can be further improved.
Drawings
FIG. 1 shows a schematic cross-sectional structure of a sensing wire of a conventional thermal-differential particle velocity sensor;
FIG. 2 is a schematic diagram of a wide response band particle velocity sensor according to embodiment 1 of the present invention;
FIG. 3 shows a first preferred structural schematic of the sensing wire of section A of FIG. 2;
FIG. 4 shows a schematic cross-sectional view of another preferred construction of the sensing wire of FIG. 2;
FIG. 5 shows a schematic diagram of a wide response band particle velocity sensor according to embodiment 2 of the present invention.
Reference numerals illustrate:
in fig. 1: 11-sensitive material layer, 12-adhesive layer, 13-carrier layer, 14-bonding layer.
Fig. 2 to 5: 2-sensitive element, 20-sensitive wire, 201-upper boundary material layer, 202-lower boundary material layer, 203-left boundary material layer, 204-right boundary material layer, 205-support layer, 206-sensitive material layer, 21-substrate, 211-bridge hole, 22-electrode, 23-heating wire.
Detailed Description
In order to make the purposes, technical solutions and advantages of the implementation of the present invention more clear, the technical solutions in the embodiments of the present invention are described in more detail below with reference to the accompanying drawings in the embodiments of the present invention. The described embodiments are some, but not all, embodiments of the invention. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention. Embodiments of the present invention will be described in detail below with reference to the attached drawings:
In the description of the present invention, it is to be understood that, unless otherwise indicated, the meaning of "a plurality" is two or more; the terms "center," "longitudinal," "transverse," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not denote or imply that the devices or elements being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the scope of the invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present invention can be understood as appropriate by those of ordinary skill in the art.
According to the working principle of the thermal temperature difference type particle vibration velocity sensor, the response frequency bandwidth of the sensor is influenced by the characteristics of sensitive materials of the sensor and the topological structure of the sensor. When the sensitive wire topological structure of the thermal temperature difference type particle vibration velocity sensor is fixed, the response frequency bandwidth of the sensor is inversely proportional to the product of the density and specific heat capacity of the sensitive wire material, namely inversely proportional to the thermal mass of the sensitive wire. Therefore, the invention improves the response frequency bandwidth of the sensor under the condition of not changing the topological structure of the sensor by reducing the thermal mass of the sensor sensitive wire. When the material selection of the sensor sensitive wire is determined, the aim of reducing the thermal quality of the sensor sensitive wire is achieved through optimizing the structure of the sensor sensitive wire, so that the response frequency bandwidth is improved.
FIG. 2 shows a schematic diagram of a wide response band particle velocity sensor according to embodiment 1 of the present invention. The wide response band particle velocity sensor provided by the invention comprises a sensing element 2 for sensing sound signals. The sensor 2 is a bridge structure comprising a substrate 21 and a number of sensor wires 20. The number of sensing filaments 20 is at least 2. The substrate 21 has a bridge opening 211 formed therein, and the cross section of the bridge opening 211 may be, but is not limited to, trapezoidal or square. The sensing wires 20 are arranged on the bridge hole 211 in parallel, that is, two ends of the sensing wires 20 are lapped on the substrates 21 at two sides of the bridge hole 211. The sensing element 2 further comprises a plurality of pairs of electrodes 22 arranged on two sides of the bridge hole 211 on the substrate 21, and two ends of the sensing wire 20 are respectively connected with the electrodes 22 on two sides of the bridge hole 211 correspondingly, namely, each sensing wire 20 is connected with one pair of electrodes 22. Sensing wire 20 is connected to peripheral circuitry via electrode 22 to enable the sensor to function properly.
The sensing wire 20 of the present invention can be implemented in a variety of configurations, see fig. 3 and 4, where two preferred sensing wire configurations are shown, respectively.
As shown in fig. 3, there is shown a first preferred structural schematic of the sensing wire of detail a of fig. 2. Referring to fig. 3, the sensing wire 20 sequentially includes a sensing material layer 206 and a supporting layer 205 from top to bottom, and the sensing material layer 206 has a hollow structure. Specifically, the sensitive material layer 206 includes an upper boundary material layer 201, side boundary material layers (i.e., a left side boundary material layer 203 and a right side boundary material layer 204) extending downward from both sides of the upper boundary material layer 201, and a lower boundary material layer 202 connecting lower ends of the both side boundary material layers. The upper boundary material layer 201, the left boundary material layer 203, the right boundary material layer 204, and the side edges of the lower boundary material layer 202 are connected to enclose a hollow structure. The support layer 205 comprises a plurality of material layers and functional layers, and the support layer 205 comprises, but is not limited to, a bonding layer, a carrier layer, and an adhesion layer in this order from bottom to top, depending on the requirements and considerations of the selected process, physical strength of the sensor, etc. In particular, the bonding layer is preferably, but not limited to, siO 2; the carrier layer is preferably but not limited to Si 3N4; the adhesion layer is Cr or Ti, preferably Cr, and the adhesion of Cr is better; the sensitive material layer 206 is Pt or Au, preferably Pt, which has better thermal resistance, better material uniformity and stronger oxidation resistance. The sensitive material layer, the bonding layer, the bearing layer and the adhesive layer can also be other materials or composite materials meeting the performance requirements. The hollow-structured sensitive wire can reduce the equivalent density of the sensitive wire, thereby reducing the thermal mass of the sensitive wire, improving the heat exchange rate of the structure and effectively improving the upper limit of the response frequency of the sensor.
Fig. 4 shows a schematic cross-sectional view of another preferred construction of the sensing wire of fig. 2. Unlike the structure shown in fig. 3, the sensing wire 20 does not include a lower boundary material layer. The sensing wire 20 sequentially comprises a sensing material layer 206 and a supporting layer 205 from top to bottom, and the sensing material layer 206 is of a hollow structure. Specifically, the sensitive material layer 206 includes an upper boundary material layer 201 and side boundary material layers (i.e., a left side boundary material layer 203 and a right side boundary material layer 204) extending downward from both sides of the upper boundary material layer 201. The upper boundary material layer 201, the left boundary material layer 203, the right boundary material layer 204 and the side edges of the supporting layer 205 are connected to enclose a hollow structure. The hollow-structured sensitive wire can also reduce the equivalent density of the sensitive material layer, thereby reducing the thermal quality of the sensitive wire, improving the heat exchange rate of the structure and effectively improving the response frequency bandwidth of the sensor.
FIG. 5 shows a schematic diagram of a wide response band particle velocity sensor according to embodiment 2 of the present invention. Unlike embodiment 1, the sensor 2 further comprises a heating wire 23 disposed on the bridge hole 211 and parallel to the plurality of sensor wires 20, i.e., two ends of the heating wire 23 are overlapped on the substrates 21 on both sides of the bridge hole 211. Specifically, two ends of the heating wire 23 are respectively connected to the electrodes 22 on two sides of the bridge hole 211, that is, the heating wire 23 is connected to a pair of electrodes 22. The heating wire 23 is connected with a peripheral circuit through the electrode 22, so that the sensor can work normally. The sensing wires 20 are symmetrically distributed on both sides of the heating wire 23, and the structure can further improve the sensitivity of the sensor.
In addition, the physical shapes of the sensitive wires and the heating wires in the wide-response frequency band particle vibration velocity sensor are not limited to the cuboid structures shown in the drawings, and can be any shape capable of meeting actual requirements and production processes.
The above embodiments are only for illustrating the technical solution of the present invention, and are not intended to limit the implementation scope of the present invention. All equivalent changes and modifications within the scope of the present invention should be considered as falling within the scope of the present invention.
Claims (6)
1. A wide response band particle velocity sensor comprising a sensing element, wherein the sensing element (2) comprises:
A substrate (21) having a bridge opening (211) formed therein; and
A plurality of sensitive wires (20) arranged in parallel on the bridge orifice (211);
the sensitive wire (20) sequentially comprises a sensitive material layer (206) and a supporting layer (205) from top to bottom, and the sensitive material layer (206) is of a hollow structure;
-the sensitive material layer (206) comprises an upper border material layer (201) and side border material layers (203, 204) extending downwards from both sides of the upper border material layer (201);
The sensitive material layer (206) further comprises a lower boundary material layer (202) connected with the lower ends of the two side boundary material layers (203, 204), and the upper boundary material layer (201), the two side boundary material layers (203, 204) and the lower boundary material layer (202) are connected to form a hollow structure in a surrounding manner; or, the upper boundary material layer (201), the two side boundary material layers (203, 204) and the side edges of the supporting layer (205) are connected to form a hollow structure in a surrounding manner;
The sensitive material layer (206) is Pt or Au.
2. A wide response band particle velocity sensor as in claim 1 wherein the sensing element (2) further comprises:
A plurality of pairs of electrodes (22) arranged on both sides of the bridge hole (211) on the substrate (21);
The two ends of the sensitive wire (20) are respectively and correspondingly connected with the electrodes (22) on the two sides of the bridge hole (211).
3. A wide response band particle velocity sensor as claimed in claim 1 or 2 wherein the sensing element (2) further comprises:
-a heating wire (23) placed on said bridge orifice (211) and parallel to said sensitive wire (20).
4. A wide response band particle velocity sensor as claimed in claim 2 wherein the sensing element (2) further comprises:
-a heating wire (23) placed on the bridge orifice (211) and parallel to the sensitive wire (20);
the two ends of the heating wire (23) are respectively and correspondingly connected with the electrodes (22) on the two sides of the bridge hole (211), and a plurality of sensitive wires (20) are symmetrically distributed on the two sides of the heating wire (23).
5. A wide response band particle velocity sensor according to claim 1 or 2, wherein the support layer (205) comprises a binding layer, a carrier layer and an adhesion layer in that order from bottom to top.
6. The sensor of claim 5, wherein the binding layer is SiO 2, the carrier layer is Si 3N4, and the adhesion layer is Cr or Ti.
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| CN212391112U (en) * | 2020-08-25 | 2021-01-22 | 中国电子科技集团公司第三研究所 | Wide-response-band particle vibration velocity sensor |
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| HU173035B (en) * | 1975-01-09 | 1979-02-28 | Banyaszati Kutato Intezet | Device for measuring the speed of low-frequency mechanical vibrations |
| CN205642606U (en) * | 2016-05-25 | 2016-10-12 | 中国电子科技集团公司第三研究所 | Particle vibration velocity measuring transducer packaging structure |
| CN109060108B (en) * | 2018-07-02 | 2020-11-06 | 中国电子科技集团公司第三研究所 | Low-frequency sound field particle vibration velocity sensitive structure and preparation method thereof |
| CN109696236A (en) * | 2018-12-27 | 2019-04-30 | 中国电子科技集团公司第三研究所 | A kind of sound field particle vibration velocity sensitive structure and preparation method |
| CN109916501B (en) * | 2019-01-17 | 2020-05-05 | 北京大学 | MEMS thermal type sound particle vibration velocity sensor with sound field enhanced microstructure and method |
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