CN111854933A - Wide-response-band particle vibration velocity sensor - Google Patents
Wide-response-band particle vibration velocity sensor Download PDFInfo
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- CN111854933A CN111854933A CN202010863143.0A CN202010863143A CN111854933A CN 111854933 A CN111854933 A CN 111854933A CN 202010863143 A CN202010863143 A CN 202010863143A CN 111854933 A CN111854933 A CN 111854933A
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- 239000002245 particle Substances 0.000 title claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 71
- 230000004044 response Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000011540 sensing material Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000005236 sound signal Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005237 high-frequency sound signal Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H17/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves, not provided for in the preceding groups
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
Abstract
The invention relates to a particle vibration velocity sensor with a wide response frequency band, which comprises a sensitive element, and is characterized in that the sensitive element (2) comprises: a substrate (21) on which a bridge hole (211) is formed; and a plurality of sensitive wires (20) arranged in parallel on the bridge holes (211); the sensitive wire (20) sequentially comprises a sensitive material layer (206) and a supporting layer (205) from top to bottom, and the sensitive material layer (206) is of a hollow structure. The invention adopts the sensitive wire with the hollow structure, reduces the equivalent density of the sensitive wire, thereby reducing the thermal mass of the sensitive wire, and improving the heat exchange rate of the structure, thereby effectively improving the upper limit of the response frequency of the sensor, expanding the response frequency band of the sensor, and being capable of detecting the particle vibration speed of the broadband sound signal without distortion.
Description
Technical Field
The invention relates to the field of sensors, in particular to a wide-response-band particle vibration velocity sensor.
Background
The sound signal comprises two parameter values of a scalar sound pressure signal and a vector particle vibration velocity signal, which respectively reflect different characteristics of a sound field. The sound field vector particle vibration velocity signals carry sound wave propagation direction information, can be used for multiple aspects such as sound source positioning and tracking and sound field imaging, and has wide application prospects in various fields such as aeroacoustics and hydroacoustics. The scalar sound pressure signal can be measured by various sensors such as an electret condenser microphone, a piezoelectric transducer and the like. For acoustic vector signals, the traditional measurement method generally performs indirect measurement based on the sound pressure gradient principle, that is, the sound pressure detected by two microphones at a certain distance is subjected to gradient calculation to indirectly obtain particle velocity signals. The traditional acoustic vector signal measurement method has various problems of low measurement precision, large aperture size of a sensor array and the like.
At the end of the last 90 s, researchers in the netherlands proposed a particle vibration velocity sensor based on a thermal temperature difference method based on a micro-electro-mechanical system (MEMS) process, which can directly measure a particle vibration velocity signal of a sound wave. When an acoustic signal acts on the sensor, the sensor can realize direct measurement of the vibration velocity signal of the acoustic particle through the temperature change of the temperature measuring beam (thermal resistance wire). The sensor based on the structure has the advantages of simple process, small array aperture, high measurement accuracy and the like, and has good directivity.
Currently, thermal differential particle velocity sensors mainly have two structures: one is parallel and parallel, three pieces of thermal resistance filament structure with certain interval, namely a heating wire positioned in the middle and two pieces of sensitive filament symmetrically distributed on two sides of the heating wire; the other is a structure of two parallel hot resistance wires with a certain distance, and the two hot resistance wires are both sensitive wires and heating wires. When the sound signal acts on the particle vibration velocity sensor with the structure, the temperature of the two sensitive wires is disturbed under the influence of the sound signal, so that the resistance values of the two sensitive wires are different, and the particle vibration velocity of the sound signal is detected.
For a thermal differential particle vibration velocity sensor, the sensor material and the sensitive wire structure have great influence on the performance of the sensor. At present, for a traditional thermal temperature difference type particle vibration velocity sensor, a sensitive wire with a solid structure is designed and manufactured by adopting various materials through technological means such as an MEMS (micro-electromechanical systems) process. Platinum is mostly adopted as a sensitive material, and materials such as silicon dioxide, silicon nitride and chromium are simultaneously selected to form structures such as a bonding layer, a bearing layer and an adhesion layer. Fig. 1 shows a schematic cross-sectional structure of a sensing wire of a conventional thermal differential particle velocity sensor.
However, the conventional thermal differential particle vibration velocity sensor based on the above structure has limited thermal mass of the sensitive layer material, so that the heat exchange rate is difficult to keep up with the change rate of the amplitude of the sound wave when responding to the high-frequency sound signal, and thus a wide response frequency band cannot be realized. This causes a series of problems such as distortion and large noise in the frequency band when the sensor detects a wide-frequency sound signal. The defect directly influences the detection of the particle vibration velocity sensor on the broadband sound signal, and limits the application scene and the application range of the particle vibration velocity sensor. Company of Microfloat et al has expanded the response band of thermal differential particle velocity sensor to some extent by hardware circuits, but also introduced more noise.
Disclosure of Invention
The invention aims to solve the technical problem of providing a wide-response-band particle vibration velocity sensor with high sensitivity and high signal-to-noise ratio.
The invention is realized by the following technical scheme:
a wide response band particle velocity sensor comprising a sensing element, the sensing element comprising:
a substrate on which a bridge hole is formed; and
a plurality of sensitive wires which are arranged on the bridge hole in parallel;
the sensitive wire sequentially comprises a sensitive material layer and a supporting layer from top to bottom, and the sensitive material layer is of a hollow structure.
Further, in the wide response band particle velocity sensor, the sensing element further includes:
a plurality of pairs of electrodes disposed on both sides of the bridge hole on the substrate;
and two ends of the sensitive wire are respectively and correspondingly connected with the electrodes on two sides of the bridge hole.
Further, in the wide response band particle velocity sensor, the sensing element further includes:
and the heating wire is arranged on the bridge hole and is parallel to the sensitive wire.
Further, in the wide response band particle velocity sensor, the sensing element further includes:
the heating wire is arranged on the bridge hole and is parallel to the sensitive wire;
the two ends of the heating wire are respectively and correspondingly connected with the electrodes on the two sides of the bridge hole, and the plurality of sensitive wires are symmetrically distributed on the two sides of the heating wire.
Further, the wide response band particle velocity sensor comprises an upper boundary material layer and side boundary material layers extending downwards from two sides of the upper boundary material layer.
Furthermore, the sensitive material layer further comprises a lower boundary material layer which connects the lower ends of the two side boundary material layers, and the upper boundary material layer, the two side boundary material layers and the lower boundary material layer are connected and surround to form a hollow structure.
Furthermore, the wide-response-band particle vibration velocity sensor is characterized in that the upper boundary material layer, the two side boundary material layers and the side edges of the supporting layer are connected to form a hollow structure in an enclosing manner.
Furthermore, the supporting layer sequentially comprises a bonding layer, a bearing layer and an adhesion layer from bottom to top.
Furthermore, in the wide-response-band particle vibration velocity sensor, the bonding layer is made of SiO2The bearing layer is Si3N4And the adhesion layer is Cr or Ti.
Furthermore, in the wide-response-band particle velocity sensor, the sensitive material layer is made of Pt or Au.
The invention has the advantages and effects that:
1. according to the wide-response-band particle vibration velocity sensor provided by the invention, on the basis of the traditional thermal temperature difference type particle vibration velocity sensor, the structure of a sensitive wire is optimized by MEMS and other process means under the conditions of not changing the topological structure of the sensor, not introducing an additional circuit and not reducing the sensitivity and the signal-to-noise ratio. The sensing wire with the hollow structure is adopted, the equivalent density of the sensing wire is reduced, the thermal mass of the sensing wire is reduced, the structural heat exchange rate is improved, the upper limit of the response frequency of the sensor is effectively improved, the response frequency band of the sensor is expanded, and the particle vibration velocity of the broadband sound signal can be detected without distortion.
2. The wide-response-band particle vibration velocity sensor also comprises heating wires, and the plurality of sensitive wires are symmetrically distributed on two sides of the heating wires, so that the sensitivity of the sensor can be further improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a sensing wire of a conventional thermal differential particle velocity sensor;
FIG. 2 is a schematic structural diagram of embodiment 1 of a wide response band particle velocity sensor provided by the present invention;
FIG. 3 shows a first preferred structural schematic of the sensing wire of detail A of FIG. 2;
FIG. 4 shows a schematic cross-sectional structure of another preferred structure of the sensing wire of FIG. 2;
fig. 5 is a schematic structural diagram of embodiment 2 of the wide response band particle velocity sensor according to the present invention.
Description of reference numerals:
in fig. 1: 11-sensitive material layer, 12-adhesion layer, 13-bearing layer and 14-binding layer.
In fig. 2 to 5: 2-sensitive element, 20-sensitive filament, 201-upper boundary material layer, 202-lower boundary material layer, 203-left boundary material layer, 204-right boundary material layer, 205-supporting layer, 206-sensitive material layer, 21-substrate, 211-bridge hole, 22-electrode, 23-heating filament.
Detailed Description
In order to make the implementation objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention are described in more detail below with reference to the accompanying drawings in the embodiments of the present invention. The described embodiments are only some, but not all embodiments of the invention. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Embodiments of the present invention are described in detail below with reference to the accompanying drawings:
in the description of the present invention, it is to be understood that, unless otherwise specified, "a plurality" means two or more; the terms "central," "longitudinal," "lateral," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated in a particular orientation, and are therefore not to be construed as limiting the scope of the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood as appropriate to those of ordinary skill in the art.
According to the working principle of the thermal temperature difference type particle vibration velocity sensor, the response frequency bandwidth of the sensor is influenced by the characteristics of the sensitive material of the sensor and the topological structure of the sensitive material. When the sensitive wire topological structure of the thermal temperature difference type particle vibration velocity sensor is constant, the response frequency bandwidth of the sensor is inversely proportional to the product of the density and the specific heat capacity of the sensitive wire material, namely inversely proportional to the thermal mass of the sensitive wire. Therefore, the invention improves the response bandwidth of the sensor by reducing the thermal mass of the sensitive wire of the sensor under the condition of not changing the topological structure of the sensor. When the material of the sensor sensitive wire is determined, the purpose of reducing the thermal mass of the sensor sensitive wire is achieved by optimizing the structure of the sensor sensitive wire, so that the response frequency bandwidth is improved.
Fig. 2 is a schematic structural diagram of embodiment 1 of the wide response band particle velocity sensor according to the present invention. The invention provides a wide response band particle velocity sensor comprising a sensing element 2 for sensing a sound signal. The sensor 2 is a bridge structure comprising a substrate 21 and a number of sensing filaments 20. The number of filaments 20 is at least 2. A bridge hole 211 is formed in the substrate 21, and the cross section of the bridge hole 211 can be, but is not limited to, a trapezoid or a square. Several sensitive wires 20 are arranged in parallel on the bridge opening 211, i.e. both ends of the sensitive wires 20 are lapped on the substrate 21 at both sides of the bridge opening 211. The sensing element 2 further includes a plurality of pairs of electrodes 22 disposed at two sides of the bridge hole 211 on the substrate 21, and two ends of the sensing wires 20 are respectively and correspondingly connected to the electrodes 22 at two sides of the bridge hole 211, that is, each sensing wire 20 is connected to one pair of electrodes 22. The sensing wire 20 is connected with peripheral circuits through an electrode 22, so that the sensor can work normally.
The wire 20 of the present invention can be implemented in a variety of configurations, see fig. 3 and 4, wherein two preferred wire configurations are shown, respectively.
As shown in fig. 3, a first preferred structural diagram of the sensitive wire of the part a in fig. 2 is shown. Referring to fig. 3, the sensing filament 20 includes a sensing material layer 206 and a supporting layer 205 in sequence from top to bottom, and the sensing material layer 206 is a hollow structure. Specifically, the sensitive material layer 206 includes an upper boundary material layer 201, side boundary material layers (i.e., a left side boundary material layer 203 and a right side boundary material layer 204) extending downward from both sides of the upper boundary material layer 201, and a lower boundary material layer 202 connecting lower ends of the both side boundary material layers. The sides of the upper border material layer 201, the left border material layer 203, the right border material layer 204 and the lower border material layer 202 are connected to surround and form a hollow structure. The support layer 205 may comprise a variety of material layers and work functions depending on the selected process, physical strength of the sensor, and other requirements and considerationsThe energy layer, the support layer 205, includes, but is not limited to, a bonding layer, a carrier layer, and an adhesion layer in this order from bottom to top. Specifically, the bonding layer is preferably, but not limited to, SiO2(ii) a The carrier layer is preferably, but not limited to, Si3N4(ii) a The adhesion layer is Cr or Ti, preferably Cr, and the Cr has better adhesion; the sensitive material layer 206 is made of Pt or Au, preferably Pt, and the thermal resistance effect, the uniformity of the material and the oxidation resistance of Pt are better. The sensitive material layer, the bonding layer, the bearing layer and the adhesion layer can also be other materials or composite materials meeting the performance requirements, and the like. The sensitive wire with the hollow structure can reduce the equivalent density of the sensitive wire, thereby reducing the thermal mass of the sensitive wire, improving the heat exchange rate of the structure and effectively improving the upper limit of the response frequency of the sensor.
Fig. 4 shows a schematic cross-sectional structure of another preferred structure of the sensing wire of fig. 2. Unlike the structure shown in fig. 3, the sensing filaments 20 do not include a lower boundary material layer. The sensing wire 20 sequentially comprises a sensing material layer 206 and a supporting layer 205 from top to bottom, wherein the sensing material layer 206 is a hollow structure. Specifically, the sensitive material layer 206 includes an upper boundary material layer 201 and side boundary material layers (i.e., a left side boundary material layer 203 and a right side boundary material layer 204) extending downward from both sides of the upper boundary material layer 201. The upper border material layer 201, the left border material layer 203, the right border material layer 204 and the side edges of the support layer 205 are connected to form a hollow structure. The sensitive wire with the hollow structure can also reduce the equivalent density of the sensitive material layer, thereby reducing the thermal mass of the sensitive wire, improving the heat exchange rate of the structure and effectively improving the response frequency bandwidth of the sensor.
Fig. 5 is a schematic structural diagram of embodiment 2 of the wide response band particle velocity sensor according to the present invention. Unlike embodiment 1, the sensing element 2 further includes a heating wire 23 disposed on the bridge hole 211 and parallel to the plurality of sensing wires 20, that is, both ends of the heating wire 23 are overlapped on the substrate 21 on both sides of the bridge hole 211. Specifically, two ends of the heating wire 23 are respectively connected to the electrodes 22 on two sides of the bridge hole 211, that is, the heating wire 23 is connected to a pair of electrodes 22. The heating wire 23 is connected to a peripheral circuit through the electrode 22, so that the sensor can normally operate. The plurality of sensitive wires 20 are symmetrically distributed on two sides of the heating wire 23, and the structure can further improve the sensitivity of the sensor.
In addition, the physical shapes of the sensitive wire and the heating wire in the wide response frequency band particle vibration velocity sensor provided by the invention are not limited to the cuboid structures shown in the figures, and can be any shapes which can meet the actual requirements and the production process.
The above examples are only for illustrating the technical solutions of the present invention, and are not intended to limit the scope of the present invention. But all equivalent changes and modifications within the scope of the present invention should be considered as falling within the scope of the present invention.
Claims (10)
1. A wide response band particle velocity sensor comprising a sensing element, wherein the sensing element (2) comprises:
a substrate (21) on which a bridge hole (211) is formed; and
a plurality of sensitive wires (20) which are arranged on the bridge holes (211) in parallel;
the sensitive wire (20) sequentially comprises a sensitive material layer (206) and a supporting layer (205) from top to bottom, and the sensitive material layer (206) is of a hollow structure.
2. A wide response band particle velocity sensor according to claim 1 wherein the sensing element (2) further comprises:
a plurality of pairs of electrodes (22) disposed on both sides of the bridge hole (211) on the substrate (21);
and two ends of the sensitive wire (20) are respectively and correspondingly connected with the electrodes (22) on two sides of the bridge hole (211).
3. A wide response band particle velocity sensor according to claim 1 or claim 2 wherein the sensing element (2) further comprises:
a heating wire (23) placed on the bridge opening (211) and parallel to the sensitive wire (20).
4. A wide response band particle velocity sensor according to claim 2 wherein said sensing element (2) further comprises:
a heating wire (23) placed on the bridge opening (211) and parallel to the sensitive wire (20);
the two ends of the heating wire (23) are respectively and correspondingly connected with the electrodes (22) on the two sides of the bridge hole (211), and the sensitive wires (20) are symmetrically distributed on the two sides of the heating wire (23).
5. A wide response band particle velocity sensor according to claim 1 or claim 2 wherein the sensing material layer (206) comprises an upper boundary material layer (201) and side boundary material layers (203,204) extending down from either side of the upper boundary material layer (201).
6. The wide response band particle velocity sensor of claim 5 wherein the sensing material layer (206) further comprises a lower boundary material layer (202) connecting the lower ends of the two side boundary material layers (203,204), and the upper boundary material layer (201), the two side boundary material layers (203,204) and the lower boundary material layer (202) are connected to form a hollow structure.
7. The wide response band particle velocity sensor of claim 5 wherein the upper boundary material layer (201), the two side boundary material layers (203,204) and the sides of the support layer (205) are connected to form a hollow structure.
8. The wide response band particle velocity sensor of claim 1 or 2 wherein the support layer (205) comprises, from bottom to top, a bonding layer, a carrier layer and an adhesion layer.
9. The wide response band particle velocity sensor of claim 8 wherein the bonding layer is SiO2The bearing layer is Si3N4The adhesion layer is Cr or Ti。
10. A broad response band particle velocity sensor according to claim 1 or claim 2 wherein the layer of sensing material (206) is Pt or Au.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114674416A (en) * | 2022-03-14 | 2022-06-28 | 北京大学 | Thermal acoustic vector sensor for inhibiting vibration interference and implementation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4051718A (en) * | 1975-01-09 | 1977-10-04 | Banyaszati Kutato Intezet | Apparatus for measuring the velocity of low frequency vibrations |
| CN205642606U (en) * | 2016-05-25 | 2016-10-12 | 中国电子科技集团公司第三研究所 | Particle vibration velocity measuring transducer packaging structure |
| CN109060108A (en) * | 2018-07-02 | 2018-12-21 | 中国电子科技集团公司第三研究所 | A kind of low frequency sound field particle vibration velocity sensitive structure and preparation method |
| CN109696236A (en) * | 2018-12-27 | 2019-04-30 | 中国电子科技集团公司第三研究所 | A kind of sound field particle vibration velocity sensitive structure and preparation method |
| CN109916501A (en) * | 2019-01-17 | 2019-06-21 | 北京大学 | A kind of the MEMS hot type sound particle vibration velocity sensor and method of sound field enhancing micro-structure |
| CN212391112U (en) * | 2020-08-25 | 2021-01-22 | 中国电子科技集团公司第三研究所 | Wide-response-band particle vibration velocity sensor |
-
2020
- 2020-08-25 CN CN202010863143.0A patent/CN111854933B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4051718A (en) * | 1975-01-09 | 1977-10-04 | Banyaszati Kutato Intezet | Apparatus for measuring the velocity of low frequency vibrations |
| CN205642606U (en) * | 2016-05-25 | 2016-10-12 | 中国电子科技集团公司第三研究所 | Particle vibration velocity measuring transducer packaging structure |
| CN109060108A (en) * | 2018-07-02 | 2018-12-21 | 中国电子科技集团公司第三研究所 | A kind of low frequency sound field particle vibration velocity sensitive structure and preparation method |
| CN109696236A (en) * | 2018-12-27 | 2019-04-30 | 中国电子科技集团公司第三研究所 | A kind of sound field particle vibration velocity sensitive structure and preparation method |
| CN109916501A (en) * | 2019-01-17 | 2019-06-21 | 北京大学 | A kind of the MEMS hot type sound particle vibration velocity sensor and method of sound field enhancing micro-structure |
| CN212391112U (en) * | 2020-08-25 | 2021-01-22 | 中国电子科技集团公司第三研究所 | Wide-response-band particle vibration velocity sensor |
Non-Patent Citations (1)
| Title |
|---|
| 赵龙江等: "用于空气声测量的质点振速传感器", 《声学学报》, vol. 40, no. 4, 31 December 2015 (2015-12-31), pages 598 - 606 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114674416A (en) * | 2022-03-14 | 2022-06-28 | 北京大学 | Thermal acoustic vector sensor for inhibiting vibration interference and implementation method thereof |
| CN114674416B (en) * | 2022-03-14 | 2023-03-28 | 北京大学 | Thermal type acoustic vector sensor for inhibiting vibration interference and implementation method thereof |
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