CN111845003A - Controllable hot-pressing implementation method of nano material - Google Patents

Controllable hot-pressing implementation method of nano material Download PDF

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CN111845003A
CN111845003A CN202010557982.XA CN202010557982A CN111845003A CN 111845003 A CN111845003 A CN 111845003A CN 202010557982 A CN202010557982 A CN 202010557982A CN 111845003 A CN111845003 A CN 111845003A
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hot
nano material
pressing
layer
substrate
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CN111845003B (en
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王玉容
孙雷蒙
肖东阳
杜欢欢
涂良成
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B32B37/1054—Regulating the dimensions of the laminate, e.g. by adjusting the nip or platen gap
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/18—Handling of layers or the laminate
    • B32B38/1808—Handling of layers or the laminate characterised by the laying up of the layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/18—Handling of layers or the laminate
    • B32B38/1825—Handling of layers or the laminate characterised by the control or constructional features of devices for tensioning, stretching or registration
    • B32B38/1833—Positioning, e.g. registration or centering
    • B32B38/1841—Positioning, e.g. registration or centering during laying up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/18—Handling of layers or the laminate
    • B32B38/1866—Handling of layers or the laminate conforming the layers or laminate to a convex or concave profile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/246—Vapour deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
    • B32B2038/0016—Abrading

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  • Fluid Mechanics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

The invention discloses a controllable hot-pressing realization method of a nano material, belonging to the technical field of nano material processing and application, and comprising the following steps: firstly, selecting a primary substrate suitable for growing a nano material to prepare the nano material; secondly, preparing an auxiliary interface layer and a hot pressing stop layer on an ideal target substrate; then the nanometer material on the primary substrate is attached to the auxiliary interface layer on the surface of the target substrate, the auxiliary interface layer is subjected to physical or chemical reaction through heating, and the nanometer material is in embedded contact with the auxiliary interface layer under certain pressure; and finally, cooling the device, removing the primary substrate and the auxiliary growth layer, and removing the hot pressing stop layer by using an immersion cleaning agent or directly removing the hot pressing stop layer, namely transferring the nano material structure on the target substrate to obtain the required nano material structure. The invention realizes the appearance integrity and the uniformity of the nano material on the planar substrate by preparing the hot-pressing cut-off layer with specific flatness and height so as to ensure the stability of the physical and chemical properties of the nano material.

Description

Controllable hot-pressing implementation method of nano material
Technical Field
The invention belongs to the technical field of nano material processing and application, and particularly relates to a controllable hot pressing implementation method of a nano material.
Background
The nano material has wide application in the fields of energy, electric appliances, environment, communication, biomedicine and the like, and the integration of the nano structure as a functional structure in a chip becomes an indispensable application method. But has faced a challenge in practical research and production: the contact mode of the nano material and the auxiliary growth layer attached to the surface of the growth substrate is unreliable, and the mechanical, electrical and thermal properties of the nano material on the substrate are influenced. The unreliable contact is caused by the fact that the two phase materials are contacted with each other by van der waals force or partial chemical bonds during the connection process of the nanometer materials on the surface of the auxiliary growth layer, and the contact strength generated by the adhesion is weak, so that the mechanical stability, the electrical contact property and the heat transfer property of the nanometer materials on the substrate are limited. Therefore, it is important to get rid of this weak adhesion with the auxiliary growth layer to allow the nanomaterial to adhere to the substrate surface with a stronger bonding mechanism (e.g., chemical bonding). This has resulted in the creation of embedded contacts of nanomaterials through auxiliary interfacial layers. The realization of embedded contact requires preparing an auxiliary interface layer on the surface of the substrate in advance, under the heating, making the material of the auxiliary interface layer in a molten state or generating a chemical reaction, at this time, placing the grown nano material on the surface of the substrate, applying pressure to embed the nano material into the auxiliary interface layer, and after cooling, the nano material and the auxiliary interface layer can form a stable contact structure.
However, hot pressing of nanomaterials has some drawbacks: the pressure itself can damage the spatial morphology of the material, causing buckling of the material elements. However, when the pressure is within the tolerable range, the unevenness of the hot-pressed mass causes an imbalance in the hot-pressing effect, resulting in partial defects and non-uniformity in orientation of the three-dimensional thin film. When the range of pressure applied by the equipment is not accurate to the most appropriate pressure requirement, the pressure redundancy is applied causing excessive damage to the material, or excessive compression in thickness. When hot pressing is usually performed for a long time when a stable structure is required to be formed, and during this time, the pressure control of the instrument is deviated, and inaccurate precision control may result in an excessively large or small pressure value. Above, excessive or non-uniform pressure may cause the mechanical stability, electrical contact properties and thermal conduction properties of the nanomaterial to be affected. Moreover, the high-precision pressure control and pressure feedback module needs a complex design, and the formed hot-pressing device is large in size and high in price. In addition, the hot pressing process of the nano material is mostly carried out in a single-chip mode, the influence of uncertainty is easily introduced in the repeated operation process, an array type flow sheet process is urgently needed, and a simple and array processing mode is urgently needed for the hot pressing of the nano material so as to accelerate the research process and the industrial application pace of the nano material. In summary, there is a need for a hot pressing method that provides uniform, repeatable, and stable precision to ensure the precise controllability and integrity of the morphology and performance of the material.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a controllable hot-pressing implementation method of a nano material, so that the technical problem that the nano material prepared by a hot-pressing instrument in the prior art is poor in appearance integrity and uniformity is solved.
To achieve the above object, according to one aspect of the present invention, there is provided a controllable hot-pressing implementation method of a nanomaterial, the method comprising the steps of:
s1, preprocessing a native substrate, depositing an auxiliary growth layer required by the growth of the nano material on the surface of the native substrate, heating the auxiliary growth layer, introducing reaction gas, and masking the native substrate in advance or removing the nano material on the edge to obtain a convex structure;
s2, preprocessing a target substrate, and depositing or coating an auxiliary interface layer on the target substrate;
s3, respectively arranging hot-pressing cut-off layers on the outer sides of the auxiliary interface layers by taking the target substrate as a substrate according to the thickness of the nano material to obtain a concave structure;
s4, fixing the concave structure and the convex structure on the opposite sides of the upper hot pressing plate and the lower hot pressing plate respectively through fixing devices;
S5, setting the heating temperature and time of the upper hot press plate and the lower hot press plate, and causing the upper hot press plate and the lower hot press plate to relatively displace under the action of an external force so as to continuously reduce the distance between the upper hot press plate and the lower hot press plate, thereby finally forming an embedded contact between the nanomaterial and the auxiliary interface layer;
and S6, separating the upper hot pressing plate and the lower hot pressing plate after cooling to remove the primary substrate and the auxiliary growth layer, and removing the hot pressing stop layer through an immersion cleaning agent or directly removing the hot pressing stop layer to obtain the structure of the required nano material containing the target substrate and the auxiliary interface layer.
Preferably, the hot-pressing reaction temperature of the auxiliary interface layer in the step S1 is lower than the melting point of the nanomaterial or the reaction temperature of the nanomaterial with air.
Preferably, when the thickness of the nano material is in a micro-scale or nano-scale, the method for disposing the thermal pressure cutoff layer in step S2 includes depositing or spin-coating a thin film.
Preferably, when the thickness of the nano material is greater than micron level, the thermal cut-off layer in step S2 is disposed by placing the ground and polished material.
Preferably, the tolerance temperature of the hot-pressing cut-off layer is higher than the temperature applied during hot-pressing, so that the hot-pressing cut-off layer is kept in a stable state during hot-pressing.
Preferably, the fixing device is a vacuum pipeline or a limiting clamp.
Preferably, the step S4 is followed by the following steps:
aligning the native substrate and the target substrate such that tips of nanomaterials are disposed within a planar extent of the auxiliary interface layer.
Preferably, in the step S2, the order of manufacturing the auxiliary interface layer and the thermal pressing stop layer may be changed.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
1. according to the invention, by building an auxiliary device for realizing hot pressing by combining a vertical multilayer structure, the hot pressing can be successfully realized under overload/floating pressure, the appearance of the nano material is protected, and the physical and chemical properties are prevented from being changed or even damaged due to the damage of the appearance of the nano material; the method realizes the distance control and ensures the optimal use height required by the nano material;
2. the invention can remove the high-precision pressure control module and the pressure feedback/detection module, remarkably reduce the research and development cost of the hot-pressing instrument and has simple operation;
3. The spacing is controlled by the hot-pressing stop layer, the hot-pressing stop layer is a thin film prepared by a semiconductor process or a smooth material prepared by polishing, the surface roughness is small, the formed pressure is uniform, the hot-pressing success rate is high, and the uniform performance of the nano material in all directions is ensured; under the support of the hot-pressing stop layer, the hot-pressing process cannot be interfered by the roughness of the bottom of the substrate and the nanometer material film, and the substrate and the nanometer material can be widely applied;
4. the hot-pressing stop layer can realize array preparation through a semiconductor process, an array sample can be adopted in the hot-pressing process, and the whole method is suitable for a rapid batch hot-pressing process.
Drawings
FIG. 1 is a schematic cross-sectional view of an auxiliary interfacial layer deposited on a surface of a target substrate in an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a hot press stop layer deposited or placed on a target substrate surface in one embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of the growth of nanomaterials on a native substrate with an auxiliary growth layer deposited thereon in one embodiment of the invention;
FIG. 4 is a schematic cross-sectional view of a vacuum line as an embodiment of the present invention;
FIG. 5 is a schematic diagram of one embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a retaining device in the form of a stop clip according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of one embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of the nanomaterial-auxiliary interface layer-target substrate obtained after removing the native substrate, the auxiliary growth layer and the hot pressing stop layer after hot pressing in one embodiment of the invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: a target substrate 101; an auxiliary interface layer 102; a hot-pressing cut-off layer 103; a native substrate 201; an auxiliary growth layer 202; a nanomaterial 203; an upper hot press plate 301 a; a lower hot press plate 301 b; a fixture 302; a thermally insulating material 303.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1 to 8, the present invention provides a controllable hot-pressing method for nano materials, which is implemented by building a vertical multi-layer structure, and comprises: a native substrate 201, an auxiliary growth layer 202, a nano material 203, a hot pressing stop layer 103, an auxiliary interface layer 102 and a target substrate 101, and an auxiliary device for implementing hot pressing: a movable upper hot press plate 301a, a lower hot press plate 301b and a fixture 302. The method specifically comprises the following steps:
S1, preprocessing the original substrate, depositing an auxiliary growth layer required by the growth of the nano material on the surface of the original substrate, heating the auxiliary growth layer, introducing reaction gas, and masking the original substrate in advance or removing the nano material on the edge to obtain the convex structure.
Specifically, in the embodiment of the present invention, the native substrate 201 is a silicon wafer, the nano material 203 is a carbon nanotube, and the auxiliary growth layer 202 is SiO2，Al2O3Or TiN, and depositing Fe, Ni, Co or other metal, wherein the reaction gas is Ar gas plus hydrocarbon.
Specifically, as shown in fig. 3, a schematic cross-sectional view of growing a nano material on a native substrate deposited with an auxiliary growth layer according to an embodiment of the present invention is provided, the native substrate 201 is subjected to a pretreatment such as cleaning, the auxiliary growth layer 202 is deposited on the surface of the native substrate 201, and the auxiliary growth layer 202 is used for auxiliarily growing a nano material 203 on the surface of the native substrate 201.
S2, preprocessing the target substrate, and depositing or coating an auxiliary interface layer on the target substrate.
Specifically, the target substrate 101 is pretreated by cleaning, etc., wherein the target substrate 101 may be quartz or aluminum nitride, and the auxiliary interface layer 102 is deposited or coated on the surface of the target substrate 101, as shown in fig. 1, which is a schematic cross-sectional view illustrating the deposition of the auxiliary interface layer on the surface of the target substrate according to the embodiment of the present invention, the auxiliary interface layer 102 is configured to form an embedded contact with the nanomaterial, and enhance the contact strength between the nanomaterial and the target substrate 101, so as to ensure the mechanical stability, electrical conductivity and thermal conductivity of the nanomaterial. Specifically, the hot-pressing reaction temperature of the auxiliary interface layer 102 should be lower than the melting point of the nanomaterial or the reaction temperature of the nanomaterial with air, and the auxiliary interface layer may be a metal layer such as gold and tin, an alloy, a compound, a polymer, a colloid, or the like, which can achieve the final purpose.
And S3, respectively arranging hot-pressing cut-off layers on the outer sides of the auxiliary interface layers by taking the target substrate as a substrate according to the thickness of the nano material to obtain a concave structure.
Specifically, as shown in FIG. 2, the embodiment of the present inventionAccording to the schematic cross-sectional view of depositing or placing the hot-pressing stop layer on the surface of the target substrate, a thin film is deposited or spin-coated on the surface of the target substrate 101 by a thin film preparation technology, such as electron beam evaporation coating, magnetron sputtering, electroplating, or the like, or a polished material is placed as the hot-pressing stop layer 103, and the preparation method of the hot-pressing stop layer 103 is determined according to the height of the required nano material. When the thickness of the required nano material is micron-sized or nano-sized, a film preparation technology is adopted, and at the moment, the film preparation technology can be matched with a semiconductor process to carry out graphical preparation of a film, so that a batch hot-pressing process is realized, and the adopted film can be SiO2SiN, polymers, etc.; if the required nano material is thicker, the material, such as stone, heat-resistant plastic, silicon chip, glass and the like, is processed into a flat block by adopting the technologies of grinding, polishing and the like. And adjusting the process to control the thickness of the hot-pressing stop layer according to the requirement, wherein the tolerance temperature of the hot-pressing stop layer is higher than the temperature applied during hot pressing, and the hot-pressing stop layer is kept in a stable state during hot pressing.
And S4, fixing the concave structure and the convex structure on the opposite sides of the upper hot pressing plate and the lower hot pressing plate respectively through fixing devices.
Specifically, as shown in fig. 4-7, fig. 4 is a schematic cross-sectional view of a vacuum pipeline as a fixing device 302, wherein the native substrate 201 and the target substrate 101 are respectively fixed on an upper hot pressing plate 301a and a lower hot pressing plate 301b by means of the vacuum pipeline; fig. 6 is a cross-sectional view of a fixing device 302 as a limiting clamp, wherein the native substrate 201 and the target substrate 101 are respectively fixed on an upper hot press plate 301a and a lower hot press plate 301b by the limiting clamp.
Specifically, after the native substrate 201 and the target substrate 101 are fixed, the native substrate 201 and the target substrate 101 need to be aligned by human eyes and a camera, so as to ensure the stability of the hot pressing.
And S5, setting the heating temperature and time of the upper hot pressing plate and the lower hot pressing plate, and enabling the upper hot pressing plate and the lower hot pressing plate to relatively displace under the action of external force so as to continuously reduce the distance between the upper hot pressing plate and the lower hot pressing plate, thereby finally enabling the nano material and the auxiliary interface layer to form embedded contact.
Specifically, as shown in fig. 5 and 7, the embodiment of the present invention provides two different fixing methods, namely, an upper hot press plate 301a and a lower hot press plate 301b are heated, the peripheries of the upper hot press plate 301a and the lower hot press plate 301b are wrapped with a heat insulating material 303, and the upper portion of the upper hot press plate 301a is moved or pressed downward by applying pressure until the upper portion cannot be moved and held downward, so that the hot pressing of the nanomaterial 203 is completed.
And S6, separating the upper hot pressing plate and the lower hot pressing plate after cooling to remove the primary substrate and the auxiliary growth layer, and removing the hot pressing stop layer through an immersion cleaning agent or directly removing the hot pressing stop layer to obtain the structure of the required nano material containing the target substrate and the auxiliary interface layer.
Specifically, as shown in fig. 8, a schematic cross-sectional view of a nanomaterial-auxiliary interface layer-target substrate is obtained by removing a native substrate, an auxiliary growth layer and a hot pressing stop layer after hot pressing, after the hot pressing is completed, the native substrate 201, the auxiliary growth layer 202 and the nanomaterial 203 need to be separated, and the separation method includes cooling the entire structure, moving the upper hot pressing plate 301a upward after cooling until the native substrate 201 and the auxiliary growth layer 202 are completely separated from the nanomaterial 203.
Specifically, the hot-pressing cut-off layer 103 needs to be removed, and for the hot-pressing cut-off layer prepared by a thin film preparation technology, the nano material 203 needs to be protected by a mask, and then the nano material reacts with the hot-pressing cut-off layer 103 through a corresponding immersion cleaning agent, so that the purpose of removal is achieved; for the block-shaped hot-pressing stop layer prepared by grinding and polishing, the hot-pressing stop layer can be directly removed. Finally, the required nano material structure is obtained, as shown in fig. 8.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1. The controllable hot pressing realization method of the nano material is characterized by comprising the following steps:
s1, preprocessing a native substrate, depositing an auxiliary growth layer required by the growth of the nano material on the surface of the native substrate, heating the auxiliary growth layer, introducing reaction gas, and masking the native substrate in advance or removing the nano material on the edge to obtain a convex structure;
S2, preprocessing a target substrate, and depositing or coating an auxiliary interface layer on the target substrate;
s3, respectively arranging hot-pressing cut-off layers on the outer sides of the auxiliary interface layers by taking the target substrate as a substrate according to the thickness of the nano material to obtain a concave structure;
s4, fixing the concave structure and the convex structure on the opposite sides of the upper hot pressing plate and the lower hot pressing plate respectively through fixing devices;
s5, setting the heating temperature and time of the upper hot press plate and the lower hot press plate, and causing the upper hot press plate and the lower hot press plate to relatively displace under the action of an external force so as to continuously reduce the distance between the upper hot press plate and the lower hot press plate, thereby finally forming an embedded contact between the nanomaterial and the auxiliary interface layer;
and S6, separating the upper hot pressing plate and the lower hot pressing plate after cooling to remove the primary substrate and the auxiliary growth layer, and removing the hot pressing stop layer through an immersion cleaning agent or directly removing the hot pressing stop layer to obtain the structure of the required nano material containing the target substrate and the auxiliary interface layer.
2. The controllable hot-pressing realization method of the nano material according to claim 1, characterized in that: the hot-pressing reaction temperature of the auxiliary interface layer in the step S1 is lower than the melting point of the nanomaterial or the reaction temperature of the nanomaterial and air.
3. The controllable hot-pressing realization method of the nano material according to claim 1, characterized in that: when the thickness of the nano material is in a micro-scale or nano-scale, the method for disposing the thermal pressure cutoff layer in step S2 includes depositing or spin-coating a thin film.
4. The controllable hot-pressing realization method of the nano material according to claim 1, characterized in that: when the thickness of the nano material is greater than the micron level, the setting method of the hot pressing cut-off layer in the step S2 is to place the polished material.
5. The controllable hot-pressing realization method of the nano material according to claim 3 or 4, characterized in that: the tolerance temperature of the hot-pressing stop layer is higher than the temperature applied during hot pressing, so that the hot-pressing stop layer is kept in a stable state during hot pressing.
6. The controllable hot-pressing realization method of the nano material according to claim 1, characterized in that: the fixing device is a vacuum pipeline or a limiting clamp.
7. The controllable hot-pressing implementation method of the nano material according to claim 1, wherein the step S4 is further followed by the following steps:
aligning the native substrate and the target substrate such that tips of nanomaterials are disposed within a planar extent of the auxiliary interface layer.
8. The controllable hot-pressing realization method of the nano material according to claim 1, characterized in that: in step S2, the order of manufacturing the auxiliary interface layer and the thermal pressing stop layer may be changed.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114987031A (en) * 2022-05-23 2022-09-02 广东骏亚电子科技股份有限公司 Multilayer pressing manufacturing method

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