CN111835303B - Weak pulse signal amplifying circuit and tiny dust detector - Google Patents
Weak pulse signal amplifying circuit and tiny dust detector Download PDFInfo
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- CN111835303B CN111835303B CN202010735178.6A CN202010735178A CN111835303B CN 111835303 B CN111835303 B CN 111835303B CN 202010735178 A CN202010735178 A CN 202010735178A CN 111835303 B CN111835303 B CN 111835303B
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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Abstract
The invention relates to the technical field of amplifying circuits, and provides a weak pulse signal amplifying circuit and a dust detector, which comprises an input capacitor, an impact sensor, a charge-sensitive pre-amplifying sub-circuit and a charge-sensitive post-amplifying sub-circuit, wherein the input capacitor and the impact sensor are respectively and electrically connected with the input end of the charge-sensitive pre-amplifying sub-circuit, the charge-sensitive post-amplifying sub-circuit and the charge-sensitive pre-amplifying sub-circuit are cascaded to form the charge-sensitive amplifying sub-circuit, the amplifying power of the charge-sensitive amplifying sub-circuit is increased by times, the signal amplifying capability of the charge-sensitive amplifying sub-circuit is improved, the charge-sensitive amplifying sub-circuit is tested to be matched with the impact sensor by utilizing the input capacitor when the impact sensor is in an idle state, and the input capacitor prevents weak charge pulse signals from being output to the charge-sensitive amplifying sub-circuit when the impact sensor is in a detection state, so that signal interference is avoided by the input capacitor to the impact sensor.
Description
Technical Field
The invention relates to the technical field of amplifying circuits, in particular to a weak pulse signal amplifying circuit and a dust detector.
Background
The conventional dust detector generally includes a weak pulse signal discharge circuit, referring to fig. 1, which shows a weak pulse signal discharge circuit including an impact sensor and a charge-sensitive pre-amplifier sub-circuit, the charge-sensitive pre-amplifier sub-circuit being directly electrically connected to the impact sensor, the impact sensor being impacted by micro-sized solid particles at a high speed (for a brief description, the micro-sized solid particles are called dust), generating a weak charge pulse signal, and outputting the weak charge pulse signal to the charge-sensitive pre-amplifier sub-circuit (for a brief description, the weak charge pulse signal output from the impact sensor is called a first charge signal), the charge-sensitive pre-amplifier sub-circuit amplifying the first charge signal, thereby improving the detection accuracy of the dust.
However, in the weak pulse signal discharge circuit, the amplification factor of the charge-sensitive preamplifier sub-circuit is limited, and the signal amplification capability is limited, so that the performance of the dust detector for detecting dust is limited.
Disclosure of Invention
Aiming at the problem that a weak pulse signal discharge circuit in the prior art limits signal amplification capacity due to the amplification factor of a charge sensitive pre-amplification sub-circuit, the invention provides a weak pulse signal amplification circuit and an impact sensor.
The first aspect of the invention provides a weak pulse signal amplifying circuit, which comprises an input capacitor, an impact sensor and a charge sensitive preamplifier sub-circuit, wherein the input capacitor and the impact sensor are respectively and electrically connected with the input end of the charge sensitive preamplifier sub-circuit, and the output end of the charge sensitive preamplifier sub-circuit is electrically connected with the input end of the charge sensitive post-amplifier sub-circuit;
the input capacitor is configured to receive an ac pulse signal and convert the ac pulse signal into a weak charge pulse signal when the impact sensor is in a first idle state, and output the weak charge pulse signal to an input end of the charge-sensitive preamplifier sub-circuit, where the first idle state is a state when the impact sensor is not impacted by dust particles;
the input capacitor is further configured to maintain a second idle state when the impact sensor is in a detection state, where the second idle state is adapted for the input capacitor to prevent the weak charge pulse signal from being output to the charge-sensitive pre-amplifier sub-circuit.
The beneficial effects of the technical scheme are as follows: the input capacitor and the impact sensor are respectively and directly coupled with the input end of the charge sensitive pre-amplifying sub-circuit, so that the impact sensor is prevented from being coupled with the charge sensitive pre-amplifying sub-circuit through the input capacitor, and the input capacitor is prevented from working along with the impact sensor.
The charge sensitive post-amplifying sub-circuit and the charge sensitive pre-amplifying sub-circuit are cascaded to form the charge sensitive amplifying sub-circuit with grading property, compared with the charge sensitive amplifying sub-circuit with single-stage property, the amplifying power of the charge sensitive amplifying sub-circuit is improved in a multiplied way, and the signal amplifying capability of the charge sensitive amplifying sub-circuit is improved.
In the idle state of the impact sensor, the input capacitor has the performances of receiving an alternating current pulse signal, converting the alternating current pulse signal into a weak charge pulse signal and outputting the weak charge pulse signal to the charge-sensitive pre-amplification subcircuit (for the sake of brief description, the weak charge pulse signal output from the input capacitor is called a second charge signal), the charge-sensitive amplification subcircuit with the grading attribute is subjected to performance test through the second charge signal, and on the basis of preventing the impact sensor from generating signal interference on the input capacitor, the charge-sensitive amplification subcircuit with the grading attribute is conveniently predicted to be matched with the impact sensor, so that the working independence of the input capacitor and the reliability of the weak pulse signal amplification circuit are improved.
When the impact sensor is in a detection state, the input capacitor has the performance of preventing the weak charge pulse signal from being output to the charge-sensitive pre-amplification subcircuit, so that the impact sensor can directly output the first charge signal to the input end of the charge-sensitive pre-amplification subcircuit, the charge-sensitive amplification subcircuit with grading properties can amplify the first charge signal, and the reliability of the weak pulse signal amplification circuit is improved.
On the basis of the technical scheme, the invention also makes the following improvements.
Optionally, the capacitance of the input capacitance is close to or equal to the capacitance of the impact sensor.
The beneficial effects of the technical scheme are as follows: the capacitance difference between the input capacitance and the impact sensor is ensured to be smaller, compared with the capacitance difference between the input capacitance and the impact sensor, the detection state of the impact sensor is more accurately simulated through the input capacitance, the noise of a second charge signal is reduced, the signal-to-noise ratio of the second charge signal is improved, and the accuracy of performance indexes such as the working point, the amplification factor and the like of the charge sensitive pre-amplifier sub-circuit is improved.
Optionally, the impact sensor is an ionization sensor having a capacitance greater than or equal to 2 picofarads and less than or equal to 200 picofarads.
The beneficial effects of the technical scheme are as follows: the capacitance of the ionization type sensor is prevented from exceeding the range from 2 picofarads to 200 picofarads, so that the performance of the charge-sensitive pre-amplifier sub-circuit is better adapted to the ionization type sensor, and the reliability of the direct coupling operation of the ionization type sensor and the charge-sensitive pre-amplifier sub-circuit is ensured.
Optionally, the ionization sensor comprises a deflection electrode net, a coated electrode plate, a first insulating layer, a second insulating layer and a protective layer;
the deflection electrode net and the first insulating layer are arranged in parallel and opposite to each other and form a discharge space, the film-coated electrode plate is clamped between the first insulating layer and the second insulating layer, and the second insulating layer is attached to the protective layer;
the deflection electrode net is grounded, and the coated electrode plate is electrically connected with the input end of the charge sensitive preamplifier sub-circuit.
The beneficial effects of the technical scheme are as follows: the first insulating layer is used for preventing local arc light from forming in the discharge space, the coated electrode plate is positioned in an insulating interlayer formed by the first insulating layer and the second insulating layer, so that the interference of an external electric field can be restrained for the coated electrode plate, the protective layer is used for providing damage prevention protection for the second insulating layer, and the service life of the ionization sensor can be prolonged.
Optionally, the coated electrode plate comprises a metal coating and a tip-removing metal substrate, the metal coating is coated outside the tip-removing metal substrate, the thickness of the metal coating is greater than or equal to 0.01 micron and less than or equal to 0.1 micron, and the area of the tip-removing metal substrate is greater than or equal to 4 square centimeters and less than or equal to 150 square centimeters.
The beneficial effects of the technical scheme are as follows: the metal coating has good conductive uniformity and high density, no tip is arranged on the tip-removed metal substrate, the initiation of the tip discharge is prevented, the enhancement of a first charge signal on the coated electrode plate is facilitated, the thickness of the metal coating is prevented from exceeding the range of 0.01-0.1 micrometer, the requirements of the metal coating on the aspects of easy forming and thinning are effectively balanced, the area of the tip-removed metal substrate is prevented from exceeding the range of 4-150 square centimeters, the miniaturization of the tip-removed metal substrate is facilitated, the material is saved, and the cost is reduced.
Optionally, the charge-sensitive pre-amplifier sub-circuit includes a junction field effect transistor, a first operational amplifier, a first dc voltage regulator, a first feedback capacitor, a first feedback resistor, a current limiting resistor, and a decoupling capacitor;
the grid electrode of the junction field effect transistor is set as the input end of the charge sensitive preamplifier sub-circuit, the drain electrode of the junction field effect transistor is electrically connected with the inverting input end of the first operational amplifier, and the source electrode of the junction field effect transistor is electrically connected with the non-inverting input end of the first operational amplifier;
the non-inverting input end of the first operational amplifier is grounded, the positive end of the first operational amplifier is electrically connected with the positive end of the first direct current voltage stabilizer, the negative end of the first operational amplifier is electrically connected with the negative end of the first direct current voltage stabilizer, and the output end of the first operational amplifier is electrically connected with the grid electrode of the junction field effect transistor through the first feedback capacitor and the first feedback resistor which are connected in parallel;
One end of the current limiting resistor is electrically connected with the output end of the first operational amplifier, the other end of the current limiting resistor is grounded through the decoupling capacitor, a common end between the current limiting resistor and the decoupling capacitor is a first resistance-capacitance coupling end, and the first resistance-capacitance coupling end is set as the output end of the charge-sensitive preamplifier sub-circuit.
The beneficial effects of the technical scheme are as follows: the junction field effect transistor and the first operational amplifier form a cascade amplifying network, the voltage of the negative end is reduced for the first operational amplifier through the first direct current voltage stabilizer, the voltage of the first operational amplifier is lower than that of the positive end, the pre-amplifying sub-circuit is ensured to be at a normal working point, the first feedback capacitor and the first feedback resistor form a first feedback network, the high-frequency gain and the limiting amplification factor are reduced for the cascade amplifying network through the first feedback network, the high-frequency interference is restrained, the oscillation is prevented, and compared with the first feedback network, the voltage of the first operational amplifier is lower than that of the first operational amplifier, which is connected in parallel with the inverting input end and the output end of the first operational amplifier, and the utilization rate of the first feedback network is improved.
Optionally, the decoupling capacitor and the current limiting resistor form a low-pass filtering branch, and the passband cut-off frequency of the low-pass filtering branch is greater than or equal to 200Hz and less than or equal to 10MHz.
The beneficial effects of the technical scheme are as follows: the passband cut-off frequency of the low-pass filtering branch is prevented from exceeding the range from 200Hz to 10MHz, after the first operational amplifier, the suppression performance is enhanced for high-frequency signals with the frequency higher than the passband cut-off frequency of the low-pass filtering branch, the charge sensitive pre-amplifier sub-circuit is helped to improve the high-frequency signal interference resistance, the signal amplification capacity of the charge sensitive pre-amplifier sub-circuit is helped to improve, and therefore the charge sensitive pre-amplifier sub-circuit is helped to adapt to the ionization sensor better in performance.
Optionally, the charge-sensitive post-amplifier sub-circuit includes a second operational amplifier, a second dc voltage regulator, a second feedback capacitor, and a second feedback resistor;
the inverting input end of the second operational amplifier is set as the input end of the charge sensitive post-amplifying sub-circuit, the non-inverting input end of the second operational amplifier is grounded, the positive electrode end of the second operational amplifier is electrically connected with the positive electrode end of the second direct current voltage stabilizer, the negative electrode end of the second operational amplifier is electrically connected with the negative electrode end of the second direct current voltage stabilizer, and the output end of the second operational amplifier is electrically connected with the inverting input end of the second operational amplifier through the second feedback capacitor and the second feedback resistor which are connected in parallel.
The beneficial effects of the technical scheme are as follows: the voltage of the negative end of the second operational amplifier is reduced by the second direct current voltage stabilizer, so that the voltage of the negative end of the second operational amplifier is lower than that of the positive end, the charge-sensitive post-amplification subcircuit is ensured to be at a normal working point, a second feedback network is formed by the second feedback capacitor and the second feedback resistor, the high-frequency gain and the limiting amplification factor of the second operational amplifier are reduced by the second feedback network, the high-frequency interference is restrained, the oscillation is prevented, and the stability of the charge-sensitive post-amplification subcircuit is improved.
Optionally, the charge-sensitive post-amplifier sub-circuit includes a coupling capacitor, a ground resistor, a third operational amplifier, a third dc voltage regulator, a third feedback capacitor, and a third feedback resistor;
one end of the coupling capacitor is electrically connected with the output end of the second operational amplifier, the other end of the coupling capacitor is grounded through the grounding resistor, a common end between the coupling capacitor and the grounding resistor is a second resistance-capacitance coupling end, and the second resistance-capacitance coupling end is electrically connected with the inverting input end of the third operational amplifier;
the non-inverting input end of the third operational amplifier is grounded, the positive end of the third operational amplifier is electrically connected with the positive end of the third direct current voltage stabilizer, the negative end of the third operational amplifier is electrically connected with the negative end of the third direct current voltage stabilizer, and the output end of the third operational amplifier is electrically connected with the inverting input end of the third operational amplifier through the third feedback capacitor and the third feedback resistor which are connected in parallel.
The beneficial effects of the technical scheme are as follows: the second operational amplifier and the third operational amplifier are coupled through the coupling capacitor, so that the coupling capacitor blocks direct current signals between the second operational amplifier and the third operational amplifier, and the high-pass filtering branch consisting of the coupling capacitor and the grounding resistor filters the signals between the second operational amplifier and the third operational amplifier, thereby improving the utilization rate of the coupling capacitor, and simplifying the electric connection mode among the coupling capacitor, the grounding resistor and the third operational amplifier by utilizing the second resistance-capacitance coupling end.
The voltage of the negative end of the third operational amplifier is reduced by the third direct current voltage stabilizer for the third operational amplifier, so that the voltage of the negative end of the third operational amplifier is lower than that of the positive end, the charge-sensitive post-amplification subcircuit is ensured to be at a normal working point, a third feedback network is formed by a third feedback capacitor and a third feedback resistor, the high-frequency gain and the limiting amplification factor of the third operational amplifier are reduced by the third feedback network, the high-frequency interference is restrained, the oscillation is prevented, and the stability and the signal amplification capability of the charge-sensitive post-amplification subcircuit are improved.
Optionally, the grounding resistor and the coupling capacitor form a high-pass filtering branch, and the passband cut-off frequency of the high-pass filtering branch is greater than or equal to 200Hz and less than or equal to 10MHz.
The beneficial effects of the technical scheme are as follows: the passband cut-off frequency of the high-pass filtering branch is prevented from exceeding the range from 200Hz to 10MHz, the suppression performance is enhanced between the second operational amplifier and the third operational amplifier for low-frequency signals with the frequency lower than the passband cut-off frequency of the high-pass filtering branch, the low-frequency signal interference resistance of the charge sensitive post-amplification sub-circuit is improved, the signal amplification capacity of the charge sensitive post-amplification sub-circuit is improved, and therefore the good performance of the charge sensitive post-amplification sub-circuit is facilitated to be suitable for the ionization sensor.
A second aspect of the invention provides a dust particle detector comprising a weak pulse signal amplification circuit as described in the first aspect.
The beneficial effects of the technical scheme are as follows: in the weak pulse signal amplifying circuit, an input capacitor and an impact sensor are respectively and directly coupled with the input end of the charge sensitive pre-amplifying sub-circuit, so that the impact sensor is prevented from being coupled with the charge sensitive pre-amplifying sub-circuit through the input capacitor, and the input capacitor is prevented from working along with the impact sensor.
The charge sensitive post-amplifying sub-circuit and the charge sensitive pre-amplifying sub-circuit are cascaded to form the charge sensitive amplifying sub-circuit with grading property, compared with the charge sensitive amplifying sub-circuit with single-stage property, the amplification factor of the charge sensitive amplifying sub-circuit is improved in a multiplied way, the signal amplifying capability of the charge sensitive amplifying sub-circuit is improved, and the space range for detecting the dust is enlarged on the basis of ensuring the detection precision of the dust detector.
When the impact sensor is in an idle state, the input capacitor has the performances of receiving an alternating current pulse signal, converting the alternating current pulse signal into a weak charge pulse signal and outputting the weak charge pulse signal to the charge-sensitive pre-amplification subcircuit, the charge-sensitive amplification subcircuit with the grading attribute is subjected to performance test through the second charge signal, and on the basis of preventing the impact sensor from generating signal interference on the input capacitor, the charge-sensitive amplification subcircuit with the grading attribute is conveniently predicted to be matched with the impact sensor, so that the working independence of the input capacitor and the reliability of the weak pulse signal amplification circuit are improved.
When the impact sensor is in a detection state, the input capacitor has the performance of preventing the weak charge pulse signal from being output to the charge-sensitive pre-amplification subcircuit, so that the impact sensor can directly output the first charge signal to the input end of the charge-sensitive pre-amplification subcircuit, the charge-sensitive amplification subcircuit with grading properties can amplify the first charge signal, and the reliability of the weak pulse signal amplification circuit is improved.
Drawings
FIG. 1 is a schematic diagram of a weak pulse signal discharge circuit in the prior art;
FIG. 2 is a schematic diagram of a weak pulse signal amplifying circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an ionization sensor according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a coated electrode plate according to an embodiment of the present invention;
FIG. 5 is a schematic waveform diagram of a first charge signal according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the relationship between the electrical signal output from the charge-sensitive post-amplifier sub-circuit and the mass and velocity of the mote in accordance with an embodiment of the present invention.
Reference numerals illustrate:
1-input capacitance, 2-impact sensor, 3-charge-sensitive pre-amplifier sub-circuit, 4-charge-sensitive post-amplifier sub-circuit;
21-deflection electrode net, 22-coated electrode plate, 23-first insulating layer, 24-second insulating layer, 25-protective layer, 221-metal coating and 222-tip-removed metal substrate;
31-junction field effect transistor, 32-first operational amplifier, 33-first direct current voltage stabilizer, 34-first feedback capacitor, 35-first feedback resistor, 36-current limiting resistor and 37-decoupling capacitor;
41-second operational amplifier, 42-second direct current voltage stabilizer, 43-second feedback capacitor, 44-second feedback resistor, 45-coupling capacitor, 46-ground resistor, 47-third operational amplifier, 48-third direct current voltage stabilizer, 49-third feedback capacitor, 410-third feedback resistor.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Referring to fig. 2, a weak pulse signal amplifying circuit according to an embodiment of the present invention includes an input capacitor 1, an impact sensor 2 and a charge-sensitive pre-amplifying sub-circuit 3, where one end of the input capacitor 1 and one end of the impact sensor 2 are directly connected to an input end of the charge-sensitive pre-amplifying sub-circuit 3, and the other end of the impact sensor 2 is grounded, so that the impact sensor 2 is prevented from being coupled to the charge-sensitive pre-amplifying sub-circuit 3 through the input capacitor 1, and the input capacitor 1 is prevented from following the impact sensor 2.
The output end of the charge sensitive pre-amplifying sub-circuit 3 is electrically connected with the input end of the charge sensitive post-amplifying sub-circuit 4, so that the charge sensitive post-amplifying sub-circuit 4 and the charge sensitive pre-amplifying sub-circuit 3 are cascaded to form a charge sensitive amplifying sub-circuit with grading property.
Optionally, the other end of the input capacitor 1 and the output end of the charge-sensitive pre-amplifying sub-circuit 3 may be electrically connected to a controller, where the controller outputs an ac pulse signal to the input capacitor 1 when the impact sensor 2 is in the first idle state, and under the action of the ac pulse signal, the input capacitor 1 enters a working state, where the working state is suitable for the input capacitor 1 to receive the ac pulse signal, convert the ac pulse signal into a second charge signal, and output the second charge signal to the input end of the charge-sensitive pre-amplifying sub-circuit 3, and perform a performance test on the charge-sensitive amplifying sub-circuit with the grading attribute through the second charge signal, so that on the basis of preventing the impact sensor 2 from generating signal interference on the input capacitor 1, the charge-sensitive amplifying sub-circuit with the grading attribute is convenient to predict the adaptation of the impact sensor 2, thereby improving the working independence of the input capacitor 1 and the reliability of the weak pulse signal amplifying circuit.
When the impact sensor 2 enters a detection state from a first idle state, the controller stops outputting the alternating current pulse signal to the input capacitor 1, so that the input capacitor 1 enters a second idle state from a working state, and the impact sensor 2 can directly output the first charge signal to the input end of the charge sensitive pre-amplifying sub-circuit 3, so that the charge sensitive amplifying sub-circuit with the grading property amplifies the first charge signal, and the reliability of the weak pulse signal amplifying circuit is improved.
It should be noted that the first idle state refers to a state when the impact sensor 2 is not impacted by the dust, the detection state refers to a state when the impact sensor 2 generates a first charge signal under the impact of the dust and outputs the first charge signal to the charge-sensitive pre-amplification sub-circuit 3, the second idle state refers to a state when the input capacitor 1 prevents the output of a second charge signal to the charge-sensitive pre-amplification sub-circuit 3, and the working state refers to a state when the input capacitor 1 generates the second charge signal under the action of an ac pulse signal and outputs the second charge signal to the charge-sensitive pre-amplification sub-circuit 3.
Optionally, the capacitance of the input capacitor 1 is close to or equal to the capacitance of the impact sensor 2, so that the difference between the capacitance of the input capacitor 1 and the capacitance of the impact sensor 2 is smaller, compared with the difference between the capacitance of the input capacitor 1 and the capacitance of the impact sensor 2, the detection state of the impact sensor 2 is more accurately simulated through the input capacitor 1, the noise of the second charge signal is reduced, the signal-to-noise ratio of the second charge signal is improved, and the accuracy of performance indexes such as the working point, the amplification factor and the like of the charge sensitive preamplifier circuit 3 is improved.
Optionally, the impact sensor 2 is an ionization sensor, and the capacitance of the ionization sensor is greater than or equal to 2 picofarads and less than or equal to 200 picofarads, so that the capacitance of the ionization sensor is prevented from exceeding the range from 2 picofarads to 200 picofarads, and the performance of the charge-sensitive preamplifier circuit 3 is better adapted to the ionization sensor, so as to ensure the reliability of the direct coupling operation of the ionization sensor and the charge-sensitive preamplifier circuit 3, for example, the capacitance of the ionization sensor is 2 picofarads or 6 picofarads or 200 picofarads.
Taking the example that the capacitance of the ionization sensor is 6 picofarads, the capacitance of the input capacitance 1 is equal to 5.3 picofarads or 6.2 picofarads, indicating that the capacitance of the input capacitance 1 is close to the capacitance of the ionization sensor.
Optionally, referring to fig. 3, there is shown an ionization sensor according to an embodiment of the present invention, the ionization sensor includes a deflection electrode mesh 21, a coated electrode plate 22, a first insulating layer 23, a second insulating layer 24, and a protective layer 25, the deflection electrode mesh 21 and the first insulating layer 23 are disposed in parallel and opposite to each other and form a discharge space, the coated electrode plate 22 is sandwiched between the first insulating layer 23 and the second insulating layer 24, the second insulating layer 24 is attached to the protective layer 25, for example, the deflection electrode mesh 21 is a nickel mesh plate, the transmittance of the nickel mesh plate is 80%, so that fine dust in a high-speed motion state enters the discharge space from the nickel mesh plate, and the capacitance of the coated electrode plate 22 is equal to 5 picofarads.
The first insulating layer 23 prevents partial arc light from forming in the discharge space, the coated electrode plate 22 is positioned in an insulating interlayer formed by the first insulating layer 23 and the second insulating layer 24, so that the coated electrode plate 22 is beneficial to inhibiting the interference of an external electric field, and the protective layer 25 provides damage protection for the second insulating layer 24, so that the service life of the ionization sensor is prolonged.
The deflection electrode net 21 is grounded, the coated electrode plate 22 is electrically connected with the input end of the charge-sensitive preamplifier circuit 3, for example, one end of the deflection electrode net 21 is electrically connected with one end of an alternating current power supply, the other end of the deflection electrode net 21 is grounded, one end of the coated electrode plate 22 is electrically connected with the other end of the alternating current power supply, and the other end of the coated electrode plate 22 is connected with one end of the input capacitor 1 in parallel with the input end of the charge-sensitive preamplifier circuit.
Alternatively, the negative electrode of the dc power supply is electrically connected to the deflection electrode mesh 21, the positive electrode of the dc power supply is electrically connected to the coated electrode plate 22, and in the process that the dc power supply applies a dc high voltage to the deflection electrode mesh 21 and the coated electrode plate 22, the fine dust in a high-speed movement state enters the discharge space from the deflection electrode mesh 21 to generate plasma in the discharge space, so that a first charge signal is formed on the deflection electrode mesh 21 and the coated electrode plate 22.
Optionally, referring to fig. 4, a coated electrode plate 22 according to an embodiment of the present invention is shown, where the coated electrode plate 22 includes a metal coating 221 and a tip-removing metal substrate 222, the metal coating 221 is coated outside the tip-removing metal substrate 222, the metal coating 221 has good conductive uniformity and high density, no tip is on the tip-removing metal substrate 222, and the tip discharge is prevented from being induced, for example, the metal coating 221 is made of tungsten, gold, platinum, iridium, rhodium, or other metal materials with high density, and the amount of charges generated by the metal coating 221 increases with the density, and the metal coating with high density is formed outside the tip-removing metal substrate 222, so as to help to enhance the first charge signal on the coated electrode plate 22.
The thickness of the metal plating film 221 is greater than or equal to 0.01 micron and less than or equal to 0.1 micron, the thickness of the metal plating film 221 is prevented from exceeding the range of 0.01 micron to 0.1 micron, the requirements of the metal plating film 221 on the aspects of easy forming and thinning are effectively balanced, the material saving and the cost reduction are facilitated, for example, the thickness of the metal plating film 221 is 0.01 micron or 0.05 micron or 0.1 micron.
Taking the thickness of the metal coating film 221 as 0.01 as an example, the mass range of the manufacturing by the electrostatic dust acceleration device is 10 -15 g<m<10 -10 g range and speed range of 1km/s<v<Iron powder in the range of 50km/s as dust particles fed to an ionization sensorFor m=1.1×10 -11 g and v=8.2 km/s, see fig. 5, which shows a first charge signal output from the deflection electrode net 21 and the coated electrode plate 22, respectively, wherein a curve near 0.22 represents the first charge signal from the deflection electrode net 21 and a curve near 0.00 represents the first charge signal from the coated electrode plate 22.
The area of the tip removing metal substrate 222 is greater than or equal to 4 square centimeters and less than or equal to 150 square centimeters, so that the area of the tip removing metal substrate 222 is prevented from exceeding the range from 4 square centimeters to 150 square centimeters, the tip removing metal substrate 222 is more beneficial to miniaturization, material saving and cost reduction, for example, the tip removing metal substrate 222 is a smooth aluminum plate which is processed by grinding, polishing and other processes, the smooth aluminum plate is square, and the side length of the smooth aluminum plate is 2.5 centimeters.
Optionally, the charge-sensitive pre-amplifier sub-circuit 3 includes a junction field effect transistor 31, a first operational amplifier 32, a first dc voltage regulator 33, a first feedback capacitor 34, a first feedback resistor 35, a current limiting resistor 36 and a decoupling capacitor 37, where a gate of the junction field effect transistor 31 is set as an input terminal of the charge-sensitive pre-amplifier sub-circuit 3, such that the gate of the junction field effect transistor 31 is electrically connected to the input capacitor 1 and the impact sensor 2, a drain of the junction field effect transistor 31 is electrically connected to an inverting input terminal of the first operational amplifier 32, and a source of the junction field effect transistor 31 is electrically connected to an non-inverting input terminal of the first operational amplifier 32, for example, the junction field effect transistor 31 is of the type IF3601, and the first operational amplifier 32 is of the type a250.
The non-inverting input terminal of the first operational amplifier 32 is grounded, the positive terminal of the first operational amplifier 32 is electrically connected to the positive terminal of the first dc voltage regulator 33, the negative terminal of the first operational amplifier 32 is electrically connected to the negative terminal of the first dc voltage regulator 33, the output terminal of the first operational amplifier 32 is electrically connected to the gate of the junction field effect transistor 31 through the first feedback capacitor 34 and the first feedback resistor 35 after being connected in parallel, for example, the capacitance value of the first feedback capacitor 34 is 0.25 picofarad, and the resistance value of the first feedback resistor 35 is 1G ohm.
The junction field effect tube 31 has the characteristics of small driving power, high response speed, high working frequency and the like, is beneficial to reducing signal noise, the junction field effect tube 31 and the first operational amplifier 32 form a cascade amplification network, the voltage of the negative end is reduced for the first operational amplifier 32 through the first direct current voltage stabilizer 33, the voltage of the first operational amplifier 32 is lower than that of the positive end, the pre-amplification sub-circuit is ensured to be at a normal working point, the first feedback capacitor 34 and the first feedback resistor 35 form a first feedback network, the high-frequency gain and the limiting amplification factor are reduced for the cascade amplification network through the first feedback network, the high-frequency interference is restrained, the oscillation is prevented, and compared with the first feedback network which is connected in parallel with the inverting input end and the output end of the first operational amplifier 32, the utilization rate of the first feedback network is improved.
One end of the current limiting resistor 36 is electrically connected with the output end of the first operational amplifier 32, the other end of the current limiting resistor 36 is grounded through the decoupling capacitor 37, the common end between the current limiting resistor 36 and the decoupling capacitor 37 is a first resistance-capacitance coupling end, and the first resistance-capacitance coupling end is set as the output end of the charge-sensitive pre-amplifier sub-circuit 3.
Optionally, the decoupling capacitor 37 and the current limiting resistor 36 form a low-pass filtering branch, the passband cut-off frequency of the low-pass filtering branch is greater than or equal to 200Hz and less than or equal to 10MHz, the passband cut-off frequency of the low-pass filtering branch is prevented from exceeding the range of 200Hz to 10MHz, after the first operational amplifier 32, the suppression performance is enhanced for high-frequency signals with the frequency higher than the passband cut-off frequency of the low-pass filtering branch, the charge-sensitive pre-amplifier sub-circuit 3 is facilitated to be improved in high-frequency signal interference resistance, the signal amplification capability of the charge-sensitive pre-amplifier sub-circuit 3 is facilitated to be improved, and therefore, the performance of the charge-sensitive pre-amplifier sub-circuit 3 is facilitated to be better adapted to an ionization sensor, for example, the passband cut-off frequency of the low-pass filtering branch is in the range of 500Hz to 2 MHz.
The input end of the charge sensitive post-amplification sub-circuit 4 is electrically connected with the first resistor-capacitor coupling end, the first operational amplifier 32 and the charge sensitive post-amplification sub-circuit 4 are coupled through the current limiting resistor 36, the current limiting resistor 36 is used for limiting current between the first operational amplifier 32 and the charge sensitive post-amplification sub-circuit 4, the low frequency filtering branch circuit formed by the current limiting resistor 36 and the decoupling capacitor 37 is used for filtering between the first operational amplifier 32 and the charge sensitive post-amplification sub-circuit 4, the utilization rate of the current limiting resistor 36 is improved, and the first resistor-capacitor coupling end is used for simplifying the electrical connection mode among the current limiting resistor 36, the decoupling capacitor 37 and the charge sensitive post-amplification sub-circuit 4.
Optionally, the charge-sensitive post-amplifier sub-circuit 4 includes a second operational amplifier 41, a second dc voltage stabilizer 42, a second feedback capacitor 43 and a second feedback resistor 44, where an inverting input terminal of the second operational amplifier 41 is set as an input terminal of the charge-sensitive post-amplifier sub-circuit 4, a non-inverting input terminal of the second operational amplifier 41 is grounded, a positive terminal of the second operational amplifier 41 is electrically connected to a positive terminal of the second dc voltage stabilizer 42, a negative terminal of the second operational amplifier 41 is electrically connected to a negative terminal of the second dc voltage stabilizer 42, and an output terminal of the second operational amplifier 41 is electrically connected to an inverting input terminal of the second operational amplifier 41 through the second feedback capacitor 43 and the second feedback resistor 44 after being connected in parallel.
The voltage of the negative end is reduced by the second direct current voltage stabilizer 42 for the second operational amplifier 41, so that the voltage of the negative end of the second operational amplifier 41 is lower than that of the positive end, the charge-sensitive post-amplifier sub-circuit 4 is ensured to be at a normal working point, a second feedback network is formed by the second feedback capacitor 43 and the second feedback resistor 44, the high-frequency gain and the limiting amplification factor are reduced for the second operational amplifier 41 through the second feedback network, the high-frequency interference is restrained, the oscillation is prevented, and the stability of the charge-sensitive post-amplifier sub-circuit 4 is improved.
Optionally, the second operational amplifier 41 is the same as the first operational amplifier 32 in type, the second dc voltage regulator 42 is the same as the first dc voltage regulator 33 in type, the second feedback capacitor 43 is equal to the first feedback capacitor 34 in capacitance value, and the second feedback resistor 44 is equal to the first feedback resistor 35 in resistance value.
Optionally, the charge-sensitive post-amplifying sub-circuit 4 includes a coupling capacitor 45, a grounding resistor 46, a third operational amplifier 47, a third dc voltage stabilizer 48, a third feedback capacitor 49 and a third feedback resistor 410, one end of the coupling capacitor 45 is electrically connected with the output end of the second operational amplifier 41, the other end of the coupling capacitor 45 is grounded through the grounding resistor 46, a common end between the coupling capacitor 45 and the grounding resistor 46 is a second resistance-capacitance coupling end, and the second resistance-capacitance coupling end is electrically connected with the inverting input end of the third operational amplifier 47.
The second operational amplifier 41 and the third operational amplifier 47 are coupled through the coupling capacitor 45, so that the coupling capacitor 45 blocks direct current signals between the second operational amplifier 41 and the third operational amplifier 47, the high-pass filtering branch circuit formed by the coupling capacitor 45 and the grounding resistor 46 filters the signals between the second operational amplifier 41 and the third operational amplifier 47, the utilization rate of the coupling capacitor 45 is improved, and the second resistance-capacitance coupling end is utilized to simplify the electric connection mode among the coupling capacitor 45, the grounding resistor 46 and the third operational amplifier 47.
The non-inverting input terminal of the third operational amplifier 47 is grounded, the positive terminal of the third operational amplifier 47 is electrically connected to the positive terminal of the third dc voltage regulator 48, the negative terminal of the third operational amplifier 47 is electrically connected to the negative terminal of the third dc voltage regulator 48, and the output terminal of the third operational amplifier 47 is electrically connected to the inverting input terminal of the third operational amplifier 47 through the third feedback capacitor 49 and the third feedback resistor 410 after being connected in parallel.
The voltage of the negative end is reduced for the third operational amplifier 47 by the third direct current voltage stabilizer 48, so that the voltage of the negative end of the third operational amplifier 47 is lower than the voltage of the positive end, the charge-sensitive post-amplifier sub-circuit 4 is ensured to be at a normal working point, a third feedback network is formed by the third feedback capacitor 49 and the third feedback resistor 410, the high-frequency gain and the limiting amplification factor are reduced for the third operational amplifier 47 by the third feedback network, the high-frequency interference is restrained, the oscillation is prevented, and the stability and the signal amplification capability of the charge-sensitive post-amplifier sub-circuit 4 are improved.
Optionally, the capacitance value of the coupling capacitor 45 is equal to the capacitance value of the decoupling capacitor 37, the resistance value of the grounding resistor 46 is equal to the resistance value of the current limiting resistor 36, the model of the third operational amplifier 47 is equal to the model of the first operational amplifier 32, the model of the third dc voltage regulator 48 is equal to the model of the first dc voltage regulator 33, the capacitance value of the third feedback capacitor 49 is equal to the capacitance value of the first feedback capacitor 34, and the resistance value of the third feedback resistor 410 is equal to the resistance value of the first feedback resistor 35.
Optionally, the grounding resistor 46 and the coupling capacitor 45 form a high-pass filtering branch, the passband cut-off frequency of the high-pass filtering branch is greater than or equal to 200Hz and less than or equal to 10MHz, the passband cut-off frequency of the high-pass filtering branch is prevented from exceeding the range from 200Hz to 10MHz, between the second operational amplifier 41 and the third operational amplifier 47, the suppression performance is enhanced for low-frequency signals with the frequency lower than that of the high-pass filtering branch, the low-frequency signal interference resistance of the charge-sensitive post-amplifier sub-circuit 4 is improved, the signal amplification capability of the charge-sensitive post-amplifier sub-circuit 4 is improved, and thus, the good performance of the charge-sensitive post-amplifier sub-circuit 4 is facilitated to be adapted to an ionization sensor, for example, the passband cut-off frequency of the high-pass filtering branch is identical to the passband cut-off frequency of the low-pass filtering branch, and the passband cut-off frequency of the high-pass filtering branch is equal to 500Hz or 1MHz or 2MHz.
Referring to fig. 6, which illustrates the relationship between the electrical signal output from the charge-sensitive post-amplifier sub-circuit 4 and the mass and velocity of the mote, in accordance with an embodiment of the present invention, the relationship between the electrical signal and the mass and velocity of the mote can be expressed as: q=α×m×v β Wherein Q represents the total charge of the aforementioned electrical signal, α represents a first coefficient, m represents the mass of the mote, v represents the velocity of the mote, and β represents a second coefficient.
The invention also provides a dust detector, which comprises a metal shell and a weak pulse signal amplifying circuit board, wherein the metal shell is hollow, the weak pulse signal amplifying circuit board is fixed in the metal shell, the metal shell expands the damage prevention capability and the electromagnetic shielding capability for the weak pulse signal amplifying circuit board, and is beneficial to improving the service life and the electromagnetic shielding performance of the dust detector, for example, the metal shell is an aluminum alloy cylinder or an iron box.
The weak pulse signal amplifying circuit board comprises a metal circuit board and the weak pulse signal amplifying circuits, wherein the weak pulse signal amplifying circuits are multiple paths, the multiple paths of weak pulse signal amplifying circuits are integrated on the metal circuit board, any two paths of weak pulse signal amplifying circuits are in an isolated state, compared with the case that one path of weak pulse signal amplifying circuits are integrated on a PCB (printed circuit board), the weak pulse signal amplifying circuits are isolated through the metal circuit board, the space utilization rate of the metal circuit board is improved, the performances of electromagnetic shielding, signal amplifying, heat dissipation and the like of the weak pulse signal amplifying circuit board are improved, the space range of detecting dust is enlarged on the basis that the detection precision is ensured by a dust detector, for example, the metal circuit board is made of any one of aluminum, titanium alloy, copper and stainless steel, the weak pulse signal amplifying circuits are 14 paths, the 14 paths of weak pulse signal amplifying circuits are arranged in a rectangular shape of 2 rows and 7 columns on the metal circuit board, or the weak pulse signal amplifying circuits are arranged in a square shape of 4 rows and 4 columns on the metal circuit board.
Although the present disclosure is described above, the scope of protection of the present disclosure is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the disclosure, and these changes and modifications will fall within the scope of the invention.
Claims (9)
1. The weak pulse signal amplifying circuit is characterized by comprising an input capacitor (1), an impact sensor (2), a charge-sensitive pre-amplifying sub-circuit (3) and a charge-sensitive post-amplifying sub-circuit (4), wherein the input capacitor (1) and the impact sensor (2) are respectively and electrically connected with the input end of the charge-sensitive pre-amplifying sub-circuit (3), and the output end of the charge-sensitive pre-amplifying sub-circuit (3) is electrically connected with the input end of the charge-sensitive post-amplifying sub-circuit (4);
the input capacitor (1) is configured to receive an ac pulse signal and convert the ac pulse signal into a weak charge pulse signal when the impact sensor (2) is in a first idle state, and output the weak charge pulse signal to an input end of the charge-sensitive pre-amplification sub-circuit (3), where the first idle state is a state when the impact sensor (2) is not impacted by dust particles, and the impact sensor (2) is an ionization sensor;
The ionization sensor comprises a deflection electrode net (21), a coated electrode plate (22), a first insulating layer (23), a second insulating layer (24) and a protective layer (25);
the deflection electrode net (21) and the first insulating layer (23) are arranged in parallel and opposite to each other to form a discharge space, the coated electrode plate (22) is clamped between the first insulating layer (23) and the second insulating layer (24), and the second insulating layer (24) is attached to the protective layer (25);
the deflection electrode net (21) is grounded, and the coated electrode plate (22) is electrically connected with the input end of the charge sensitive pre-amplifying sub-circuit (3);
the coated electrode plate (22) comprises a metal coating film (221) and a tip-removing metal substrate (222), wherein the metal coating film (221) is coated outside the tip-removing metal substrate (222), the thickness of the metal coating film (221) is greater than or equal to 0.01 micron and less than or equal to 0.1 micron, and the area of the tip-removing metal substrate (222) is greater than or equal to 4 square centimeters and less than or equal to 150 square centimeters;
the input capacitor (1) is further configured to maintain a second idle state when the impact sensor (2) is in a detection state, the second idle state being adapted for the input capacitor (1) to prevent outputting the weak charge pulse signal to the charge-sensitive pre-amplification sub-circuit (3).
2. A weak pulse signal amplification circuit according to claim 1, characterized in that the capacitance of the input capacitance (1) is close to or equal to the capacitance of the impact sensor (2).
3. The weak pulse signal amplification circuit of claim 2, wherein the ionization sensor has a capacitance greater than or equal to 2 picofarads and less than or equal to 200 picofarads.
4. A weak pulse signal amplification circuit according to claim 1, characterized in that the charge-sensitive pre-amplification sub-circuit (3) comprises a junction field effect transistor (31), a first operational amplifier (32), a first dc voltage regulator (33), a first feedback capacitance (34), a first feedback resistor (35), a current limiting resistor (36) and a decoupling capacitance (37);
the grid electrode of the junction field effect tube (31) is set as the input end of the charge sensitive pre-amplifying sub-circuit (3), the drain electrode of the junction field effect tube (31) is electrically connected with the inverting input end of the first operational amplifier (32), and the source electrode of the junction field effect tube (31) is electrically connected with the non-inverting input end of the first operational amplifier (32);
the non-inverting input end of the first operational amplifier (32) is grounded, the positive electrode end of the first operational amplifier (32) is electrically connected with the positive electrode end of the first direct current voltage stabilizer (33), the negative electrode end of the first operational amplifier (32) is electrically connected with the negative electrode end of the first direct current voltage stabilizer (33), and the output end of the first operational amplifier (32) is electrically connected with the grid electrode of the junction field effect tube (31) through the first feedback capacitor (34) and the first feedback resistor (35) which are connected in parallel;
One end of the current limiting resistor (36) is electrically connected with the output end of the first operational amplifier (32), the other end of the current limiting resistor (36) is grounded through the decoupling capacitor (37), a common end between the current limiting resistor (36) and the decoupling capacitor (37) is a first resistance-capacitance coupling end, and the first resistance-capacitance coupling end is set as the output end of the charge-sensitive pre-amplifying sub-circuit (3).
5. The weak pulse signal amplification circuit according to claim 4, wherein the decoupling capacitor (37) and the current limiting resistor (36) constitute a low-pass filter branch, and a passband cut-off frequency of the low-pass filter branch is greater than or equal to 200Hz and less than or equal to 10MHz.
6. A weak pulse signal amplification circuit according to any one of claims 1-5, characterized in that the charge-sensitive post-amplification subcircuit (4) comprises a second operational amplifier (41), a second dc voltage regulator (42), a second feedback capacitance (43) and a second feedback resistor (44);
the inverting input end of the second operational amplifier (41) is set as the input end of the charge-sensitive post-amplification subcircuit (4), the non-inverting input end of the second operational amplifier (41) is grounded, the positive electrode end of the second operational amplifier (41) is electrically connected with the positive electrode end of the second direct current voltage stabilizer (42), the negative electrode end of the second operational amplifier (41) is electrically connected with the negative electrode end of the second direct current voltage stabilizer (42), and the output end of the second operational amplifier (41) is electrically connected with the inverting input end of the second operational amplifier (41) through the second feedback capacitor (43) and the second feedback resistor (44) after being connected in parallel.
7. The weak pulse signal amplification circuit of claim 6, wherein the charge-sensitive post-amplification subcircuit (4) comprises a coupling capacitor (45), a ground resistor (46), a third operational amplifier (47), a third dc voltage regulator (48), a third feedback capacitor (49), and a third feedback resistor (410);
one end of the coupling capacitor (45) is electrically connected with the output end of the second operational amplifier (41), the other end of the coupling capacitor (45) is grounded through the grounding resistor (46), a common end between the coupling capacitor (45) and the grounding resistor (46) is a second resistance-capacitance coupling end, and the second resistance-capacitance coupling end is electrically connected with the inverting input end of the third operational amplifier (47);
the non-inverting input end of the third operational amplifier (47) is grounded, the positive electrode end of the third operational amplifier (47) is electrically connected with the positive electrode end of the third direct current voltage stabilizer (48), the negative electrode end of the third operational amplifier (47) is electrically connected with the negative electrode end of the third direct current voltage stabilizer (48), and the output end of the third operational amplifier (47) is electrically connected with the inverting input end of the third operational amplifier (47) through the third feedback capacitor (49) and the third feedback resistor (410) after being connected in parallel.
8. The weak pulse signal amplification circuit according to claim 7, wherein the grounding resistor (46) and the coupling capacitor (45) constitute a high-pass filter branch, and a passband cut-off frequency of the high-pass filter branch is greater than or equal to 200Hz and less than or equal to 10MHz.
9. A dust particle detector comprising a weak pulse signal amplification circuit as claimed in any one of claims 1 to 8.
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| JP2002051264A (en) * | 2000-08-03 | 2002-02-15 | Sharp Corp | Correlative double sampling circuit |
| CN101349671A (en) * | 2008-09-04 | 2009-01-21 | 上海交通大学 | Field effect tube and molecular ionization syncretic gas sensor |
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