CN111835187A

CN111835187A - Switching circuit

Info

Publication number: CN111835187A
Application number: CN201910300672.7A
Authority: CN
Inventors: 张现聚; 梅健平; 孙锋锋
Original assignee: Beijing Zhaoyi Innovation Technology Co Ltd; Hefei Geyi Integrated Circuit Co Ltd
Current assignee: Zhaoyi Innovation Technology Group Co ltd; Hefei Geyi Integrated Circuit Co Ltd
Priority date: 2019-04-15
Filing date: 2019-04-15
Publication date: 2020-10-27
Anticipated expiration: 2039-04-15
Also published as: CN111835187B

Abstract

The present invention provides a switching circuit, including: the voltage overshoot detection module is connected with the enabling signal, detects whether the difference value of the second voltage minus the first voltage is larger than or equal to a preset voltage value, and outputs a detection signal according to a detection result when the enabling signal is at a high level; the power domain conversion module is connected with the enable counter signal, is connected with the voltage overshoot detection module, and converts the detection signal into a power domain signal when the enable counter signal is at a low level; the discharging module is connected with the power domain conversion module, is connected with the enabling signal, and discharges the second voltage when the enabling signal is at a high level and the power domain signal is at a high level; and the switch module is connected with the enabling signal and is respectively connected with the power domain conversion module, the discharging module, the first voltage providing end and the second voltage providing end, and when the enabling signal is at a high level and the power domain signal is at a low level, the switch module is switched on. The invention can effectively inhibit the overshoot of the first voltage.

Description

Switching circuit

Technical Field

The present invention relates to the field of circuit technologies, and in particular, to a switching circuit.

Background

In the prior art, when a switch tube mp 0' in the switch circuit is turned on, two independent voltages are connected together. Referring to fig. 1, in the switch circuit, the capacitance C1 'and the capacitance C2' are of the same order, assuming that the VPR 'voltage is lower than the VPRH' voltage. After connection, an overshoot of the VPR' voltage is undesirable. Before the switch mp0 ' is turned on, the VPR ' voltage and the VPRH ' voltage are two independent voltages. If the voltage value between the VPR ' voltage and the VPRH ' voltage is relatively large, the VPR ' voltage and the VPRH ' voltage are directly connected after the switching transistor mp0 ' is turned on. Wherein, waveforms before and after the VPR 'voltage and the VPRH' voltage are connected are shown in fig. 2, a curve 1 'is a VPR' voltage waveform, and a curve 2 'is a VPRH' voltage waveform. As can be seen from fig. 2, after the VPR ' voltage and the VPRH ' voltage are connected, the VPR ' voltage may overshoot significantly.

Disclosure of Invention

In view of the above problems, an object of the embodiments of the present invention is to provide a switch circuit to solve the problem of voltage overshoot of the existing switch circuit.

In order to solve the above problem, an embodiment of the present invention discloses a switching circuit, including: the voltage overshoot detection module is respectively connected with the first voltage supply end and the second voltage supply end, the control end of the voltage overshoot detection module is connected with an enabling signal, the voltage overshoot detection module detects whether the difference value of the second voltage minus the first voltage is larger than or equal to a preset voltage value, and when the enabling signal is at a high level, the voltage overshoot detection module outputs a detection signal according to a detection result; the control end of the power domain conversion module is connected with an enable inverted signal, the first input end of the power domain conversion module is connected with a power supply, the second input end of the power domain conversion module is connected with the output end of the voltage overshoot detection module, and when the enable inverted signal is in a low level, the power domain conversion module converts the detection signal into a power domain signal; a first input end of the discharging module is connected with the second voltage providing end, a second input end of the discharging module is connected with an output end of the power domain conversion module, a control end of the discharging module is connected with the enable signal, and when the enable signal is at a high level and the power domain signal is at a high level, the discharging module discharges the second voltage; the switch module, the first control termination of switch module the enabling signal, switch module's second control end respectively with power domain conversion module's output with discharge the second input of module links to each other, switch module still respectively with first voltage provide the end with the second voltage provides the end and links to each other, works as enabling signal is the high level and when the power domain signal is the low level, switch module switches on.

Optionally, the voltage overshoot detection module includes: a first input end of the voltage overshoot detection submodule is connected with the first voltage supply end, and a second input end of the voltage overshoot detection submodule is connected with the second voltage supply end; the control end of the first switch submodule is connected with the enabling signal, the first end of the first switch submodule is connected with the output end of the voltage overshoot detection submodule, and the second end of the first switch submodule is grounded; when the enable signal is at a high level, the first switch submodule is conducted, and the voltage overshoot detection submodule outputs a detection signal according to a detection result.

Optionally, the voltage overshoot detection module further includes: and when the difference value is greater than or equal to the preset voltage value, the voltage clamping submodule clamps the first end voltage of the first switch submodule to a difference value of the power supply voltage minus the conduction voltage of the first switch submodule.

Optionally, the voltage overshoot detection sub-module includes: the control end of the first switch unit is connected with the first voltage supply end, and the first end of the first switch unit is connected with the second voltage supply end; a control end of the second switch unit is connected with the first voltage supply end, a first end of the second switch unit is connected with a second end of the first switch unit, and a second end of the second switch unit is used as an output end of the voltage overshoot detection submodule; when the enable signal is at a high level and the difference is greater than or equal to the preset voltage value, the first switch unit and the second switch unit are turned on.

Optionally, the power domain conversion module includes: the control end of the third switching unit is connected with the enable inverted signal, and the first end of the third switching unit is connected with the power supply; a control end of the fourth switch unit is connected with an output end of the voltage overshoot detection module, and a first end of the fourth switch unit is connected with a second end of the third switch unit; a control end of the fifth switch unit is connected with an output end of the voltage overshoot detection module, a first end of the fifth switch unit is connected with a second end of the fourth switch unit, and the second end of the fifth switch unit is grounded; the input end of the first inverter is respectively connected with the first end of the fifth switch unit and the second end of the fourth switch unit, and the output end of the first inverter is used as the output end of the power domain conversion module; when the enable inverted signal is at a low level and the difference value is greater than or equal to the preset voltage value, the fifth switch unit is turned on, and a power domain signal output by the power domain conversion module is at a high level; when the enable inverted signal is at a low level and the difference value is smaller than the preset voltage value, the third switching unit and the fourth switching unit are turned on, and a power domain signal output by the power domain conversion module is at a low level.

Optionally, the power domain conversion module further includes: the control end of the voltage clamping unit is connected with the enable inverted signal, the first end of the voltage clamping unit is respectively connected with the first end of the fifth switch unit and the second end of the fourth switch unit, and the second end of the voltage clamping unit is grounded; when the enable inverted signal is at a high level, the voltage clamping unit is turned on, the voltage clamping unit clamps the voltage at the first end of the fifth switch unit and the voltage at the second end of the fourth switch unit to zero, and the power domain signal output by the power domain conversion module is at a high level.

Optionally, the discharge module comprises: a control end of the seventh switching unit is connected with an output end of the power domain conversion module, and a first end of the seventh switching unit is connected with the second voltage supply end; the control end of the eighth switch unit is connected with the enable signal, the first end of the eighth switch unit is connected with the second end of the seventh switch unit, and the second end of the eighth switch unit is grounded; when the enable signal is at a high level and the power domain signal is at a high level, the seventh switching unit and the eighth switching unit are turned on.

Optionally, the switch module comprises: the input end of the second inverter is respectively connected with the output end of the power domain conversion module and the second input end of the discharge module; and the first control end of the second switch submodule is connected with the enabling signal, the second control end of the second switch submodule is connected with the output end of the second inverter, the second switch submodule is also connected with the first voltage supply end and the second voltage supply end respectively, and when the enabling signal is at a high level and the power domain signal is at a low level, the second switch submodule is conducted.

Optionally, the first switch sub-module is a first NMOS transistor, the first switch unit is a first PMOS transistor, and the second switch unit is a second PMOS transistor.

Optionally, the third switching unit is a third PMOS transistor, the fourth switching unit is a fourth PMOS transistor, and the fifth switching unit is a second NMOS transistor.

The switching circuit of the embodiment of the invention has the following advantages: the voltage overshoot detection module is additionally arranged in the switch circuit, is connected with the first voltage supply end and the second voltage supply end respectively, the control end of the voltage overshoot detection module is connected with an enable signal, the voltage overshoot detection module detects whether the difference value of the second voltage minus the first voltage is larger than or equal to a preset voltage value, and when the enable signal is in a high level, the voltage overshoot detection module outputs a detection signal according to a detection result; the control end of the power domain conversion module is connected with an enable inverted signal, the first input end of the power domain conversion module is connected with a power supply, the second input end of the power domain conversion module is connected with the output end of the voltage overshoot detection module, and when the enable inverted signal is at a low level, the power domain conversion module converts the detection signal into a power domain signal; the first input end of the discharging module is connected with the second voltage providing end, the second input end of the discharging module is connected with the output end of the power domain conversion module, the control end of the discharging module is connected with an enabling signal, and when the enabling signal is at a high level and the power domain signal is at the high level, the discharging module discharges the second voltage; and setting a first control end of the switch module to be connected with an enabling signal, wherein a second control end of the switch module is respectively connected with the output end of the power domain conversion module and a second input end of the discharge module, the switch module is also respectively connected with the first voltage supply end and the second voltage supply end, and when the enabling signal is at a high level and the power domain signal is at a low level (the difference value of the second voltage minus the first voltage is smaller than a preset voltage value), the switch module is switched on. Therefore, when the enable signal is at a high level and the power domain signal is at a high level (the difference between the second voltage and the first voltage is greater than or equal to the preset voltage value, the discharging module discharges the second voltage, the switch module is in a disconnected state and does not connect the second voltage and the first voltage, so that the first voltage is prevented from being seriously overshot, and when the enable signal is at a high level and the difference between the second voltage and the first voltage is less than the preset voltage value, the switch module is switched on, so that the overshoot of the first voltage is effectively inhibited.

Drawings

FIG. 1 is a schematic diagram of a prior art switching circuit;

FIG. 2 is a schematic diagram of waveforms before and after voltage connection in a prior art switching circuit;

FIG. 3 is a block diagram of a switching circuit embodiment of the present invention;

FIG. 4 is a schematic diagram of a switch circuit according to an embodiment of the present invention;

fig. 5 is a schematic waveform diagram of the switching circuit shown in fig. 4 before and after the connection of the first voltage and the second voltage.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.

Referring to fig. 3, a block diagram of a switch circuit according to an embodiment of the present invention is shown, which may specifically include the following modules: the voltage overshoot detection module 1 is characterized in that the voltage overshoot detection module 1 is respectively connected with a first voltage supply end and a second voltage supply end, the first voltage supply end provides a first voltage VPR, the second voltage supply end provides a second voltage VPRH, the control end of the voltage overshoot detection module 1 is connected with an enable signal EN, the voltage overshoot detection module 1 detects whether the difference value of the second voltage VPRH minus the first voltage VPR is larger than or equal to a preset voltage value VTH, and when the enable signal EN is at a high level, the voltage overshoot detection module 1 outputs a detection signal VDIS according to a detection result; the power domain conversion module 2 is connected with the enable inverted signal ENB at the control end of the power domain conversion module 2, the first input end of the power domain conversion module 2 is connected with a power supply, the power supply voltage is VDD, the second input end of the power domain conversion module 2 is connected with the output end of the voltage overshoot detection module 1, and when the enable inverted signal ENB is in a low level, the power domain conversion module 2 converts the detection signal VDIS into a power domain signal DISC; the first input end of the discharging module 3 is connected with the second voltage providing end, the second input end of the discharging module 3 is connected with the output end of the power domain conversion module 2, the control end of the discharging module 3 is connected with the enable signal EN, and when the enable signal EN is at a high level and the power domain signal DISC is at a high level, the discharging module 3 discharges the second voltage VPRH; switch module 4, switch module 4's first control termination enable signal EN, switch module 4's second control end links to each other with the output of power domain conversion module 2 and the second input of module 3 that discharges respectively, switch module 4 still links to each other with first voltage supply end and second voltage supply end respectively, and when enable signal EN was the high level and power domain signal DISC was the low level, switch module 4 switched on, and first voltage VPR and second voltage VPRH are connected. The first voltage VPR and the second voltage VPRH are greater than the power supply voltage VDD.

Thus, when the enable signal EN is at a high level and the power domain signal DISC is at a high level (the difference between the second voltage VPRH and the first voltage VPR is greater than or equal to the preset voltage value VTH), the discharging module 3 discharges the second voltage VPRH, the switching module 4 is in a disconnected state, the second voltage VPRH and the first voltage VPR are not connected, and the first voltage VPR is prevented from being overshot seriously, and when the enable signal EN is at a high level and the difference between the second voltage VPRH and the first voltage VPR is less than the preset voltage value VTH, the switching module 4 is turned on, so that the overshoot of the first voltage VPR is effectively suppressed.

Optionally, in an embodiment of the present invention, referring to fig. 4, the voltage overshoot detection module 1 may include: a first input end of the voltage overshoot detection submodule 11 is connected with a first voltage supply end, and a second input end of the voltage overshoot detection submodule 11 is connected with a second voltage supply end; the control end of the first switch submodule 12 is connected with an enable signal EN, the first end of the first switch submodule 12 is connected with the output end of the voltage overshoot detection submodule 11, and the second end of the first switch submodule 12 is grounded; when the enable signal EN is at a high level, the first switch submodule 12 is turned on, and the voltage overshoot detection submodule 11 outputs the detection signal VDIS according to the detection result.

Optionally, in an embodiment of the present invention, referring to fig. 4, the voltage overshoot detection module 1 may further include: the voltage clamping submodule 13 is connected with a power supply, a first end of the voltage clamping submodule 13 is connected with an output end of the voltage overshoot detection submodule 11, a second end of the voltage clamping submodule 13 is connected with a first end of the first switch submodule 12, and when the difference value is larger than or equal to a preset voltage value VTH, the voltage clamping submodule 13 clamps a first end voltage of the first switch submodule 12 to be a difference value of the power supply voltage VDD and the conducting voltage of the first switch submodule 12. It should be noted that, when the difference is greater than or equal to the preset voltage value VTH, the voltage at the output end of the voltage overshoot detection submodule 11 is very large, and the voltage clamping submodule 13 may reduce the voltage at the first end of the first switch submodule 12, so as to prevent the voltage at the output end of the voltage overshoot detection submodule 11 from damaging the first switch submodule 12, and implement voltage protection on the first switch submodule 12.

Optionally, in an embodiment of the present invention, referring to fig. 4, the voltage overshoot detection sub-module 11 may include: a first switching unit 110, a control terminal of the first switching unit 110 being connected to a first voltage supply terminal, a first terminal of the first switching unit 110 being connected to a second voltage supply terminal; a control end of the second switch unit 111 is connected to the first voltage providing end, a first end of the second switch unit 111 is connected to a second end of the first switch unit 110, and a second end of the second switch unit 111 is used as an output end of the voltage overshoot detection submodule 11; when the enable signal EN is at a high level and the difference is greater than or equal to the preset voltage value VTH, the first switch unit 110 and the second switch unit 111 are turned on, and the detection signal VDIS is a high voltage signal; when the enable signal EN is at a high level and the difference is smaller than the preset voltage value VTH, the first switch unit 110 and the second switch unit 111 are turned off, the first switch submodule 12 and the voltage clamp submodule 13 are turned on, and the detection signal VDIS is a zero voltage signal.

Alternatively, in an embodiment of the present invention, referring to fig. 4, the power domain converting module 2 may include: a third switching unit 21, wherein a control end of the third switching unit 21 is connected with an enable inverted signal ENB, and a first end of the third switching unit 21 is connected with a power supply; a control end of the fourth switching unit 22 is connected with the output end of the voltage overshoot detection module 1, and a first end of the fourth switching unit 22 is connected with a second end of the third switching unit 21; a control end of the fifth switching unit 23 is connected to the output end of the voltage overshoot detection module 1, a first end of the fifth switching unit 23 is connected to the second end of the fourth switching unit 22, and a second end of the fifth switching unit 23 is grounded; a first inverter F1, an input end of the first inverter F1 is connected to the first end of the fifth switching unit 23 and the second end of the fourth switching unit 22, respectively, and an output end of the first inverter F1 serves as an output end of the power domain switching module 2; when the enable bar signal ENB is at a low level and the difference is greater than or equal to the preset voltage value VTH, the fifth switching unit 23 is turned on, and the power domain signal DISC output by the power domain conversion module 2 is at a high level; when the enable bar signal ENB is at a low level and the difference is smaller than the preset voltage value VTH, the third switching unit 21 and the fourth switching unit 22 are turned on, and the power domain signal DISC output by the power domain conversion module 2 is at a low level.

Optionally, in an embodiment of the present invention, referring to fig. 4, the power domain converting module 2 may further include: the control end of the voltage clamping unit 24 is connected with the enable inverted signal ENB, the first end of the voltage clamping unit 24 is respectively connected with the first end of the fifth switching unit 23 and the second end of the fourth switching unit 22, and the second end of the voltage clamping unit 24 is grounded; when the enable bar signal ENB is at a high level, the voltage clamping unit 24 is turned on, the voltage clamping unit 24 clamps the voltage at the first end of the fifth switching unit 23 and the voltage at the second end of the fourth switching unit 22 to zero, and the power domain signal DISC output by the power domain converting module 2 is at a high level.

Alternatively, in an embodiment of the present invention, referring to fig. 4, the discharging module 3 may include: a control end of the seventh switching unit 31 is connected with the output end of the power domain conversion module 2, and a first end of the seventh switching unit 31 is connected with the second voltage supply end; the control end of the eighth switching unit 32 is connected with the enable signal EN, the first end of the eighth switching unit 32 is connected with the second end of the seventh switching unit 31, and the second end of the eighth switching unit 32 is grounded; when the enable signal EN is at a high level and the power domain signal DISC is at a high level, the seventh switching unit 31 and the eighth switching unit 32 are turned on, and the seventh switching unit 31 and the eighth switching unit 32 discharge the second voltage VPRH.

Alternatively, in a specific embodiment of the present invention, referring to fig. 4, the switch module 4 may include: the input end of the second inverter F2 is respectively connected with the output end of the power domain conversion module 2 and the second input end of the discharge module 3; the second switch submodule 41 is connected to the enable signal EN, the second control terminal of the second switch submodule 41 is connected to the output terminal of the second inverter F2, the second switch submodule 41 is further connected to the first voltage supply terminal and the second voltage supply terminal, when the enable signal EN is at a high level and the power domain signal DISC is at a low level, the second switch submodule 41 is turned on, and the first voltage VPR is connected to the second voltage VPRH.

Alternatively, in an embodiment of the present invention, referring to fig. 4, the first switching submodule 12 may be a first NMOS transistor N1, the first switching unit 110 may be a first PMOS transistor P1, and the second switching unit 111 may be a second PMOS transistor P2. When the first switch submodule 12 is the first NMOS transistor N1, the turn-on voltage of the first switch submodule 12 is the difference between the gate terminal voltage of the first NMOS transistor N1 and the source terminal voltage of the first NMOS transistor N1.

Alternatively, in an embodiment of the present invention, referring to fig. 4, the third switching unit 21 may be a third PMOS transistor P3, the fourth switching unit 22 may be a fourth PMOS transistor P4, and the fifth switching unit 23 may be a second NMOS transistor N2.

Alternatively, in an embodiment of the present invention, referring to fig. 4, the voltage clamping sub-module 13 may be a third NMOS transistor N3, and the voltage clamping unit 24 may be a fourth NMOS transistor N4.

Alternatively, in an embodiment of the present invention, referring to fig. 4, the seventh switching unit 31 may be a fifth NMOS transistor N5, and the eighth switching unit 32 may be a sixth NMOS transistor N6.

In fig. 4, Levelshift is a conventional voltage conversion module.

The specific operating principle of the switching circuit shown in fig. 4 is as follows:

when the enable signal EN is at a low level, that is, EN is equal to 0, the first switch submodule 12, the third switch unit 21, the voltage clamping unit 24, and the eighth switch unit 32 are all turned off, the power domain signal DISC is at a high level, that is, DISC is 1, the nand gate output signal I1_ Y in the second switch submodule 41 is at a high level, the level shift circuit output signal S0 is also at a high level, the switch tube in the second switch submodule 41 is in an off state, and the first voltage VPR and the second voltage VPRH are also in an off state.

When the enable signal EN is at a high level, that is, EN is equal to 1, if the difference between the second voltage VPRH and the first voltage VPR is greater than or equal to the preset voltage value VTH, the first PMOS transistor P1 and the second PMOS transistor P2 are turned on, the first NMOS transistor N1 and the third NMOS transistor N3 are turned on, and the detection signal VDIS is a high voltage signal. At this time, the third PMOS transistor P3 is turned on, the second NMOS transistor N2 is turned on, the fourth PMOS transistor P4 is turned off, the input signal of the first inverter F1 is a zero-level signal, the power domain signal DISC, which is the output signal of the first inverter F1, is a high-level signal, DISC is 1, the power domain signal DISC controls the fifth NMOS transistor N5 and the sixth NMOS transistor N6 to discharge the second voltage VPRH, during the discharge, the power domain signal DISC is at a high level, the enable signal EN is at a high level, the nand gate output signal I1_ Y in the second switch submodule 41 is at a high level, the level shifter output signal S0 is also at a high level, the switch transistors in the second switch submodule 41 are in an off state, and the first voltage VPR and the second voltage VPRH are also in an off state.

When the enable signal EN is at a high level, that is, EN is equal to 1, if the difference between the second voltage VPRH and the first voltage VPR is smaller than the preset voltage value VTH, the first PMOS transistor P1 and the second PMOS transistor P2 are in an off state, the first NMOS transistor N1 and the third NMOS transistor N3 are turned on, and the detection signal VDIS is a low voltage signal. At this time, the third PMOS transistor P3 and the fourth PMOS transistor P4 are turned on, the second NMOS transistor N2 is turned off, the input signal of the first inverter F1 is a high level signal, the power domain signal DISC, which is the output signal of the first inverter F1, is a low level signal DISC 0, the fifth NMOS transistor N5 and the sixth NMOS transistor N6 are turned off, the nand gate output signal I1_ Y of the second switch submodule 41 is a low level, the level shift circuit output signal S0 is also a low level, the switch transistor of the second switch submodule 41 is turned on, and the first voltage VPR and the second voltage VPRH are connected.

Waveforms before and after the connection of the first voltage VPR and the second voltage VPRH in the switching circuit shown in fig. 4 are as shown in fig. 5, where a curve 1 is a voltage waveform of the first voltage VPR and a curve 2 is a voltage waveform of the second voltage VPRH. When the first voltage VPR and the second voltage VPRH are connected, the voltage difference between the first voltage VPR and the second voltage VPRH is smaller than the preset voltage value VTH, as can be seen from fig. 5, the overshoot of the first voltage VPR is small, and the switching circuit of the embodiment of the invention effectively inhibits the overshoot of the first voltage VPR.

It should be noted that, in the embodiment of the present invention, the structure of the second switch sub-module 41 includes, but is not limited to, the structure of the second switch sub-module 41 in fig. 4, and the structure of the second switch sub-module 41 may be any switch structure that directly connects two independent voltages when conducting.

The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.

As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.

Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing terminal to cause a series of operational steps to be performed on the computer or other programmable terminal to produce a computer implemented process such that the instructions which execute on the computer or other programmable terminal provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.

Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.

The above detailed description of the switching circuit provided by the present invention, and the specific examples applied herein have been provided to explain the principles and embodiments of the present invention, and the above descriptions of the embodiments are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims

1. A switching circuit, comprising:

the voltage overshoot detection module is respectively connected with the first voltage supply end and the second voltage supply end, the control end of the voltage overshoot detection module is connected with an enabling signal, the voltage overshoot detection module detects whether the difference value of the second voltage minus the first voltage is larger than or equal to a preset voltage value, and when the enabling signal is at a high level, the voltage overshoot detection module outputs a detection signal according to a detection result;

the control end of the power domain conversion module is connected with an enable inverted signal, the first input end of the power domain conversion module is connected with a power supply, the second input end of the power domain conversion module is connected with the output end of the voltage overshoot detection module, and when the enable inverted signal is in a low level, the power domain conversion module converts the detection signal into a power domain signal;

a first input end of the discharging module is connected with the second voltage providing end, a second input end of the discharging module is connected with an output end of the power domain conversion module, a control end of the discharging module is connected with the enable signal, and when the enable signal is at a high level and the power domain signal is at a high level, the discharging module discharges the second voltage;

the switch module, the first control termination of switch module the enabling signal, switch module's second control end respectively with power domain conversion module's output with discharge the second input of module links to each other, switch module still respectively with first voltage provide the end with the second voltage provides the end and links to each other, works as enabling signal is the high level and when the power domain signal is the low level, switch module switches on.

2. The switching circuit of claim 1, wherein the voltage overshoot detection module comprises:

a first input end of the voltage overshoot detection submodule is connected with the first voltage supply end, and a second input end of the voltage overshoot detection submodule is connected with the second voltage supply end;

the control end of the first switch submodule is connected with the enabling signal, the first end of the first switch submodule is connected with the output end of the voltage overshoot detection submodule, and the second end of the first switch submodule is grounded;

when the enable signal is at a high level, the first switch submodule is conducted, and the voltage overshoot detection submodule outputs a detection signal according to a detection result.

3. The switching circuit of claim 2, wherein the voltage overshoot detection module further comprises:

and when the difference value is greater than or equal to the preset voltage value, the voltage clamping submodule clamps the first end voltage of the first switch submodule to a difference value of the power supply voltage minus the conduction voltage of the first switch submodule.

4. The switching circuit of claim 2, wherein the voltage overshoot detection submodule comprises:

the control end of the first switch unit is connected with the first voltage supply end, and the first end of the first switch unit is connected with the second voltage supply end;

a control end of the second switch unit is connected with the first voltage supply end, a first end of the second switch unit is connected with a second end of the first switch unit, and a second end of the second switch unit is used as an output end of the voltage overshoot detection submodule;

when the enable signal is at a high level and the difference is greater than or equal to the preset voltage value, the first switch unit and the second switch unit are turned on.

5. The switching circuit of claim 1, wherein the power domain conversion module comprises:

the control end of the third switching unit is connected with the enable inverted signal, and the first end of the third switching unit is connected with the power supply;

a control end of the fourth switch unit is connected with an output end of the voltage overshoot detection module, and a first end of the fourth switch unit is connected with a second end of the third switch unit;

a control end of the fifth switch unit is connected with an output end of the voltage overshoot detection module, a first end of the fifth switch unit is connected with a second end of the fourth switch unit, and the second end of the fifth switch unit is grounded;

the input end of the first inverter is respectively connected with the first end of the fifth switch unit and the second end of the fourth switch unit, and the output end of the first inverter is used as the output end of the power domain conversion module;

when the enable inverted signal is at a low level and the difference value is greater than or equal to the preset voltage value, the fifth switch unit is turned on, and a power domain signal output by the power domain conversion module is at a high level;

when the enable inverted signal is at a low level and the difference value is smaller than the preset voltage value, the third switching unit and the fourth switching unit are turned on, and a power domain signal output by the power domain conversion module is at a low level.

6. The switching circuit of claim 5, wherein the power domain conversion module further comprises:

the control end of the voltage clamping unit is connected with the enable inverted signal, the first end of the voltage clamping unit is respectively connected with the first end of the fifth switch unit and the second end of the fourth switch unit, and the second end of the voltage clamping unit is grounded; when the enable inverted signal is at a high level, the voltage clamping unit is turned on, the voltage clamping unit clamps the voltage at the first end of the fifth switch unit and the voltage at the second end of the fourth switch unit to zero, and the power domain signal output by the power domain conversion module is at a high level.

7. The switching circuit of claim 1, wherein the discharging module comprises:

a control end of the seventh switching unit is connected with an output end of the power domain conversion module, and a first end of the seventh switching unit is connected with the second voltage supply end;

the control end of the eighth switch unit is connected with the enable signal, the first end of the eighth switch unit is connected with the second end of the seventh switch unit, and the second end of the eighth switch unit is grounded;

when the enable signal is at a high level and the power domain signal is at a high level, the seventh switching unit and the eighth switching unit are turned on.

8. The switching circuit of claim 1, wherein the switching module comprises:

the input end of the second inverter is respectively connected with the output end of the power domain conversion module and the second input end of the discharge module;

and the first control end of the second switch submodule is connected with the enabling signal, the second control end of the second switch submodule is connected with the output end of the second inverter, the second switch submodule is also connected with the first voltage supply end and the second voltage supply end respectively, and when the enabling signal is at a high level and the power domain signal is at a low level, the second switch submodule is conducted.

9. The switch circuit of claim 4, wherein the first switch submodule is a first NMOS transistor, the first switch unit is a first PMOS transistor, and the second switch unit is a second PMOS transistor.

10. The switch circuit of claim 5, wherein the third switch unit is a third PMOS transistor, the fourth switch unit is a fourth PMOS transistor, and the fifth switch unit is a second NMOS transistor.