CN111834386A - Manufacturing method of light-emitting element and electronic device applying light-emitting element - Google Patents
Manufacturing method of light-emitting element and electronic device applying light-emitting element Download PDFInfo
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- CN111834386A CN111834386A CN201911099698.6A CN201911099698A CN111834386A CN 111834386 A CN111834386 A CN 111834386A CN 201911099698 A CN201911099698 A CN 201911099698A CN 111834386 A CN111834386 A CN 111834386A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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Abstract
The present disclosure provides a method for manufacturing a light emitting device and an electronic device using the light emitting device. Light emitting diodes are provided. Applying an energy beam to treat a surface of the photodiode, wherein a power density of the energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm. The light-emitting element manufactured by the manufacturing method of the light-emitting element in the embodiment of the disclosure can improve the light extraction efficiency, has a better light-emitting effect, and can be electrically connected with the driving circuit to form an electronic device.
Description
Technical Field
The present disclosure relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a light emitting device and an electronic device using the light emitting device.
Background
In recent years, a light emitting element having a light emitting diode or an electronic device using the light emitting element is gradually becoming a display or lighting tendency. The light emitting diode generally separates the light emitting diode from the sapphire substrate by decomposing an undoped gallium nitride layer into a gallium layer and a nitrogen layer using a laser, wherein the gallium layer is easily remained on the surface of the light emitting diode, thereby affecting the effective light extraction efficiency and the light type of the light emitting diode. In order to remove the gallium layer on the surface of the light emitting diode, hydrogen chloride is used for removing by acid washing. However, the step of acid cleaning may not only damage the solder/bump material of the substrate or the light emitting diode, thereby causing a reduction in yield or a limitation in use of the material, but also cause environmental pollution and may not meet the trend of green production (GreenProduction). Therefore, how to effectively remove the gallium layer on the surface of the led to improve the light extraction efficiency (light extraction efficiency) of the led has become one of the problems to be solved.
Disclosure of Invention
The present disclosure provides a method for manufacturing a light emitting device and an electronic device using the light emitting device, which can improve light extraction efficiency and have a better light emitting effect.
According to an embodiment of the present disclosure, a method for fabricating a light emitting device includes the following steps. Light emitting diodes are provided. Applying an energy beam to treat a surface of the photodiode, wherein a power density (power density) of the energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm.
According to another embodiment of the present disclosure, a method for fabricating a light emitting device includes the following steps. A first substrate on which light emitting diodes have been formed is provided. The first energy beam is applied to the first substrate to separate the light emitting diode from the first substrate and expose the buffer layer of the light emitting diode. And applying a second energy beam on the buffer layer to form a surface roughness layer on the light emitting diode, wherein the power density of the second energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm.
According to another embodiment of the present disclosure, an electronic device includes a light emitting element and a driving circuit electrically connected to the light emitting element. The manufacturing method of the light-emitting element comprises the following steps. Light emitting diodes are provided. Applying an energy beam to treat a surface of the photodiode, wherein a power density (power density) of the energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm.
According to another embodiment of the present disclosure, an electronic device includes a light emitting element and a driving circuit electrically connected to the light emitting element. The manufacturing method of the light-emitting element comprises the following steps. A first substrate on which light emitting diodes have been formed is provided. The first energy beam is applied to the first substrate to separate the light emitting diode from the first substrate and expose the buffer layer of the light emitting diode. And applying a second energy beam on the buffer layer to form a surface roughness layer on the light emitting diode, wherein the power density of the second energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm.
In summary, in the embodiments of the present disclosure, the surface of the light emitting diode is processed by applying an energy beam, wherein the power density of the energy beam is greater than 0 mj/cm and less than or equal to 2000 mj/cm, so that the light extraction efficiency of the light emitting device and the electronic device using the light emitting device can be improved, and a better light emitting effect can be obtained.
In order to make the aforementioned and other features and advantages of the disclosure more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
Fig. 1A to fig. 1E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to an embodiment of the disclosure;
fig. 2A to 2C are schematic cross-sectional views of various light-emitting elements according to various embodiments of the present disclosure;
fig. 3A to fig. 3B are schematic cross-sectional views of partial steps of a method for fabricating a light emitting device according to another embodiment of the disclosure.
Description of the reference numerals
10: a first substrate;
20: a second substrate;
100: a light emitting diode;
100a, 100b, 100c, 100d, 100 e: a light emitting element;
110: an epitaxial structure layer;
112: a first type semiconductor layer;
114: a light emitting layer;
116: a second type semiconductor layer;
120: a buffer layer;
120a, 120 e: a surface roughness layer;
122a, 122b, 122c, 122 d: a microstructure;
130: a first type electrode;
140: a second type electrode;
h: a height;
l1, L2, L2': an energy beam;
p: spacing;
s: a surface;
t1: a first thickness;
t2: a second thickness;
w: width.
Detailed Description
The term "a structure (or a layer, an element, a substrate) on another structure (or a layer, an element, a substrate) as used in the present disclosure may mean that two structures are adjacent and directly connected, or may mean that two structures are adjacent and not directly connected, and the non-direct connection means that two structures have at least one intermediate structure (or an intermediate layer, an intermediate element, an intermediate substrate, an intermediate space) therebetween, the lower surface of one structure is adjacent or directly connected to the upper surface of the intermediate structure, the upper surface of the other structure is adjacent or directly connected to the lower surface of the intermediate structure, and the intermediate structure may be a single-layer or multi-layer solid structure or a non-solid structure, without limitation. In the present disclosure, when a structure is disposed "on" another structure, it may be directly on the other structure or indirectly on the other structure, that is, at least one structure is sandwiched between the other structure and the certain structure.
The electrical connection or coupling described in the present disclosure may refer to direct connection or indirect connection, in which case the terminals of the two circuit components are directly connected or connected to each other by a conductor segment, and in which case the terminals of the two circuit components have a switch, a diode, a capacitor, an inductor or a combination of one of the components of other non-conductor segments and at least one conductive segment or a resistor, or a combination of at least two of the above components and at least one conductive segment or a resistor.
In the present disclosure, the thickness, length and width may be measured by an optical microscope, and the thickness may be measured by a cross-sectional image of an electron microscope, but not limited thereto. In addition, there may be some error in any two values or directions for comparison. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.
In the following embodiments, the same or similar elements will be denoted by the same or similar reference numerals, and the detailed description thereof will be omitted. Furthermore, the features of the various embodiments may be combined in any suitable manner without departing from the spirit or conflict of the invention, and all such modifications and equivalents as may be within the spirit and scope of the disclosure are deemed to be within the ambit and scope of the disclosure. In addition, the terms "first", "second", and the like in the description or the claims are only used for naming discrete (discrete) elements or distinguishing different embodiments or ranges, and are not used for limiting the upper limit or the lower limit of the number of elements, nor for limiting the manufacturing order or the arrangement order of the elements.
In the present disclosure, the light emitting device may be a light emitting diode package unit, an array substrate having light emitting diodes, or a display panel having light emitting diodes. The size of the light emitting diode is not limited, and the light emitting diode may include a spectrum conversion material such as fluorescence (fluorescence), phosphorescence (phor), pigment or quantum dot (quantum dot), but not limited thereto. In the present disclosure, the electronic device may be a display device including a light emitting element, a light source device, a backlight device, a sensing device, an antenna device, or a splicing device, but is not limited thereto. The electronic device can be a bendable or flexible electronic device. It should be noted that the electronic device can be any permutation and combination of the foregoing, but not limited thereto. Furthermore, the electronic device may be applied to any electronic products or electronic apparatuses, such as but not limited to televisions, tablet computers, notebook computers, mobile phones, cameras, wearable devices, electronic entertainment devices, communication antennas, and the like.
Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A to fig. 1E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to an embodiment of the disclosure. In the method for manufacturing a light emitting device of the present embodiment, first, referring to fig. 1A, a light emitting diode 100 is provided, wherein the step of providing the light emitting diode 100 includes providing a first substrate 10 on which the light emitting diode 100 is formed. Here, the light emitting diode 100 is formed on the first substrate 10, wherein the first substrate 10 is, for example, a sapphire substrate, but not limited thereto. In other embodiments, the material of the first substrate 10 may include, for example, quartz, silicon, glass, plastic, resin or other materials suitable for use as a substrate, depending on the growth temperature of the light emitting diode or the temperature tolerance of the substrate, but is not limited thereto. In detail, the light emitting diode 100 includes an epitaxial structure layer 110, a buffer layer 120, a first type electrode 130, and a second type electrode 140. The epitaxial structure layer 110 includes a first type semiconductor layer 112, a light emitting layer 114, and a second type semiconductor layer 116, wherein the light emitting layer 114 is located between the first type semiconductor layer 112 and the second type semiconductor layer 116, and the buffer layer 120 is located between the first substrate 10 and the first type semiconductor layer 112. That is, the light emitting diode 100 directly contacts the first substrate 10 with the buffer layer 120. The first-type electrode 130 and the second-type electrode 140 are located on the same side of the light emitting diode 100, and the first-type electrode 130 is electrically connected to the first-type semiconductor layer 112, and the second-type electrode 140 is electrically connected to the second-type semiconductor layer 116. That is, the LED 100 of the present embodiment is embodied as a Flip Chip LED, and may be a small-sized Micro LED (Micro LED) or a milli LED (Mini LED).
Furthermore, the first-type semiconductor layer 112 of the present embodiment may be, for example, an N-type semiconductor layer, the second-type semiconductor layer 116 may be, for example, a P-type semiconductor layer, and the light-emitting layer 114 may be, for example, a Multi-quantum well (MQW) layer, but not limited thereto. The buffer layer 120 may include an undoped gallium nitride (GaN) layer, which may be used as a stress compensation adjustment with the first substrate 10 during the epitaxy process, so as to reduce the dislocation density of the overall epitaxial structure 110 and improve the epitaxy quality. In another embodiment, the material of the buffer layer 120 may also include aluminum (Al). The first-type electrode 130 is, for example, an N-type electrode, and the second-type electrode 140 is, for example, a P-type electrode, but not limited thereto. In another embodiment, the first-type electrode 130 is, for example, a P-type electrode, and the second-type electrode 140 is, for example, an N-type electrode.
It should be noted that, in the present embodiment, each of the light emitting diodes 100 has a buffer layer 120. However, in other embodiments not shown, one buffer layer 120 may correspond to a plurality of leds 100. That is, the buffer layer 120 may be a patterned structure or an entire unpatterned structure, which is not limited herein. In other embodiments, a plurality of buffer layers may be disposed between the light emitting diode 100 and the first substrate 10, and each buffer layer may be made of the same material or different materials.
Next, referring to fig. 1A, a second substrate 20 is provided opposite to the first substrate 10, so that the light emitting diode 100 is located between the first substrate 10 and the second substrate 20. Here, the second substrate 20 may be used as a temporary substrate, a transfer substrate or a final substrate, wherein the material of the second substrate 20 may include glass, silicon, plastic or resin, and the second substrate 20 as the final substrate may include a Thin Film Transistor (TFT) or other driving devices, which is not limited herein.
Next, referring to fig. 1B and fig. 1C, an energy beam L1 (which can be regarded as a first energy beam) is applied to separate the light emitting diode 100 from the first substrate 10. When the energy beam L1 is applied on the first substrate 10 or at the interface between the first substrate 10 and the light emitting diode 100, the energy beam L1 may break the bonding force between the light emitting diode 100 and the first substrate 10, so as to separate the light emitting diode 100 from the first substrate 10 and expose the buffer layer 120 of the light emitting diode 100. Furthermore, the separated led 100 can be disposed on the second substrate 20 by transferring, and the first type electrode 130 and the second type electrode 140 contact the second substrate 20, and a plurality of electrode pads can be disposed on the second substrate 20 and electrically connected to the first type electrode 130 and the second type electrode 140, respectively. An electrical connection medium or a medium assisting in strengthening the electrical connection, such as Anisotropic Conductive Film (ACF), conductive paste, conductive metal layer or resin, may be disposed between the electrode pad and the first-type electrode 130 or the second-type electrode 140. There may be no electrically connecting medium between the electrode pad and the first-type electrode 130 or the second-type electrode 140, and the electrode pad and the first-type electrode 130 or the second-type electrode 140 are electrically connected in a eutectic (eutectic) manner. At this time, the outermost surface of the light emitting diode 100 is the buffer layer 120, and after the energy beam L1 is applied, the residue (including gallium) of the buffer layer 120 is formed on the upper surface of the buffer layer 120. That is, the material of the buffer layer 120 includes gallium. Here, the energy beam L1 is, for example, a laser beam, but not limited thereto, and the wavelength and intensity of the laser beam can be adjusted according to the requirement, and is not limited thereto.
Thereafter, referring to FIG. 1D, an energy beam L2 (which can be considered as a second energy beam) is applied to treat the surface S of the photo diode 100, wherein the power density of the energy beam L2 is, for example, greater than 0 millijoules per square centimeter (mJ/cm)2) And less than or equal to 2000 millijoules per square centimeter (mJ/cm)2). In the present embodiment, the power density of the energy beam L2 is greater than 20 mj/cm and less than or equal to 2000 mj/cm. In one embodiment, the source of the energy beam L2 is the same as the source of the energy beam L1, wherein the energy beam L2 and the energy beam L1 are laser beams, respectively.In another embodiment, the source of the energy beam L2 and the source of the energy beam L1 may be different.
Here, the lower limit of the power density depends on the material and thickness of the led 100. Generally, a laser power meter (power meter) is used to measure a Continuous Wave (CW) or repetitive pulse light source, and the sensor used is usually a thermopile or a photodiode. The optical cavity is a major factor affecting the laser output mode. The longitudinal mode directly influences the monochromaticity (the half-height width of a characteristic peak of a spectral line), the coherent length of laser and the relation of output power to time; the transverse mode affects the size of the divergence angle (divergence angle), the size of the spot size (spot size), and the maximum value of the output power (i.e., the energy distribution). The power density can be scaled by spot, frequency/wavelength and energy size.
Finally, referring to fig. 1D and 1E, energy beam L2 is applied to treat surface S of photodiode 100, in addition to removing the residue (including gallium) of buffer layer 120, a plurality of microstructures 122 may also be formed. In detail, the energy beam L2 is applied on the buffer layer 120 to form the surface roughness layer 120a on the led 100. Here, the surface roughness layer 120a includes a plurality of raised microstructures (i.e., microstructures 122), and the raised microstructures may be separated from each other, or partially connected to each other and partially separated from each other. That is, the microstructure 122 is a bump. In cross section, the shape of the protruding microstructure is, for example, but not limited to, trapezoid, triangle, semicircle, semi-ellipse or irregular shape. More specifically, the height H of the microstructure 122 in the Z-axis direction is, for example, in a range of 10 nanometers (nanometer) to 100 nanometers (nanometer), but not limited thereto. The width W of the microstructure 122 is, for example, in the range of 10 nm to 1000 nm in the X-axis direction or the Y-axis direction, but not limited thereto. In one embodiment, the height H is the maximum height in the Z-axis direction, and the width W is the maximum width in the X-axis or Y-axis direction. In another embodiment, the width W can be, for example, the width of the base of the microstructure or the width between two microstructures connected to the base. The pitch P between two adjacent and separated microstructures 122 is, for example, in the range of 10 nm to 1000 nm in the X-axis direction or the Y-axis direction, but not limited thereto.
In the present embodiment, the surface roughness of the surface roughness layer 120a is observed and measured by a focused ion microscope (FIB) having a magnification of 5000 to 50000 times. The roughness of the surface roughness layer 120a observed under this condition is 10 nm to 100 nm, where the roughness is a height difference (Z-axis direction) between the highest point and the lowest point in a unit length of the surface roughness layer 120 a. In addition to the above-described focused ion microscope, in other embodiments, the roughness measurement of the surface roughness layer 120a may be performed by using a Scanning Electron Microscope (SEM) with a magnification of 5000 to 50000 times, a Transmission Electron Microscope (TEM) with a magnification of 5000 to 50000 times, or an Atomic Force Microscope (AFM) with a measurement scale of 10 micrometers (micrometer) to 100 micrometers (micrometer).
In short, the application of the energy beam L2 is intended to remove the residues (including gallium) of the buffer layer 120 and form the microstructure 122 on the surface S of the light emitting diode 100. That is, the present embodiment removes the derivatives or residues (including gallium) of the buffer layer 120 by laser processing, and forms the nano-scale microstructures 122 on the surface of the buffer layer 120, thereby improving the light extraction efficiency of the light emitting diode 100. In other words, the present embodiment employs a physical laser method to remove derivatives or residues (including gallium) on the surface of the led 100, which is different from the chemical acid cleaning method in the prior art, and is more environment-friendly and meets the trend of green production. Thus, the light-emitting element 100a is completed. The light emitting device 100a is disposed on the second substrate 20 in two dimensions (X-Y plane) and electrically connected to a driving device or a driving circuit on the second substrate 20 to form a light emitting diode array substrate or a light emitting diode panel. The light emitting diode array substrate or the light emitting diode light emitting panel can be electrically connected with a driving circuit board or an IC (integrated circuit) and other driving circuits of the system, and is combined with other functional elements and a bearing mechanism to form the electronic device.
The light extraction efficiency of the led 100 is not good because the refractive index of the material (e.g., gallium nitride) of the buffer layer 120 is very different from the refractive index of other dielectric materials (e.g., air is about 1). In general, in order to improve the light extraction efficiency, a micro-scale structure may be formed on the surface of gan by a patterned sapphire substrate to enhance the light extraction efficiency. However, the micro-scale structures are still relatively large and not suitable compared to the size of the micro-leds. In the present embodiment, when the derivatives or residues (including gallium) on the buffer layer 120 are physically removed, the nano-scale microstructures 122 are formed on the surface of the buffer layer 120 at the same time to be suitable for the light-emitting device 100a with a micro size, so that the light extraction efficiency of the light-emitting device 100a can be improved.
In another embodiment, the light emitting diode 100 may be provided by the light emitting diode 100 already formed on the second substrate 20 in fig. 1C. Therefore, the led 100 herein is exposed to the energy beam L2 with a power density greater than 20 mj/cm and less than or equal to 2000 mj/cm to treat the surface S of the led 100, so as to remove the residue (including gallium) of the buffer layer 120 and form the microstructure 122 on the surface S of the led 100, which still falls within the protection scope of the present disclosure.
In addition, in the above embodiment, the microstructure 122a of the light emitting device 100a is embodied as a trapezoid in a cross-sectional view, but not limited thereto. In a cross-sectional view, in fig. 2A, the microstructure 122b of the light emitting device 100b may also be rectangular; alternatively, in a cross-sectional view, in fig. 2B, the microstructure 122c of the light emitting device 100c may also be triangular; alternatively, in fig. 2C, the microstructure 122d of the light emitting device 100d may be a semi-elliptical shape in cross section. Of course, in other embodiments not shown, the microstructure of the light emitting device may also be a recess, or the microstructure may also be another suitable shape or an irregular shape in a cross-sectional view, as long as the light extraction efficiency of the light emitting device can be increased, which falls within the scope of the present disclosure.
Fig. 3A to fig. 3B are schematic cross-sectional views of partial steps of a method for fabricating a light emitting device according to another embodiment of the disclosure. After the step of fig. 1C, i.e., applying the energy beam L1 to separate the light emitting diode 100 from the first substrate 10 of the growth substrate, please refer to fig. 3A and 3B simultaneously, apply the energy beam L2' to treat the surface S of the light emitting diode 100 to remove at least a portion of the surface S. Here, the power density of the energy beam L2' is greater than 0 mj/cm and less than or equal to 20 mj/cm.
In detail, the area of the buffer layer 120 of the present embodiment is greater than or equal to the area of the surface roughness layer 120 e. Furthermore, the buffer layer 120 of the present embodiment has a first thickness T1, the surface roughness layer 120e has a second thickness T2, and the second thickness T2 is smaller than the first thickness T1. That is, the present embodiment applies the energy beam L2' for the purpose of thinning the residue (including gallium) of the buffer layer 120 to form the surface roughness layer 120e, wherein the ratio of the residue depends on the power density. In short, the present embodiment achieves different residual rates by matching lower power density to achieve the requirement of light-emitting rate (light-emitting rate).
In the present embodiment, the surface roughness of the surface roughness layer 120e is observed and measured by a focused ion microscope (FIB) having a magnification of 5000 to 50000 times. The roughness of the surface roughness layer 120e is observed under this condition to be 1 nm to 50 nm. In addition to using the focused ion microscope, in other embodiments, the roughness measurement of the surface roughness layer 120e may be performed using a Scanning Electron Microscope (SEM) with a magnification of 5000 to 50000 times, or a Transmission Electron Microscope (TEM) with a magnification of 5000 to 50000 times, or an Atomic Force Microscope (AFM) with a measurement scale of 10 to 100 micrometers. Thus, the light-emitting element 100e is completed. The light emitting element 100e is disposed on the second substrate 20 in two dimensions (X-Y plane) and electrically connected to a driving element or a driving circuit on the second substrate 20 to form a light emitting diode array substrate or a light emitting diode panel. The light emitting diode array substrate or the light emitting diode light emitting panel can be electrically connected with a driving circuit board or an IC (integrated circuit) and other driving circuits of the system, and is combined with other functional elements and a bearing mechanism to form the electronic device.
It should be noted that, in another embodiment, the light emitting diode 100 may be provided by providing the light emitting diode 100 already formed on the second substrate 20 in fig. 1C. Therefore, the led 100 herein only needs to process the surface S of the led 100 by the energy beam L2' with a power density greater than 0 mj/cm and less than or equal to 20 mj/cm, so as to thin the residue (including gallium) of the buffer layer 120 and form the surface roughness layer 120 e.
In summary, in the embodiments of the present disclosure, the surface of the light emitting diode is processed by applying the energy beam, wherein the power density of the energy beam is greater than 0 mj/cm and less than or equal to 2000 mj/cm, so that the light extraction efficiency of the light emitting device can be improved, and the light emitting effect can be better. In one embodiment, the power density of the energy beam is greater than 20 mJ/cm and less than or equal to 2000 mJ/cm, the residue of the buffer layer (including gallium) can be removed, and a microstructure is formed on the surface of the light emitting diode, thereby improving the light extraction efficiency of the light emitting device. In another embodiment, the power density of the energy beam is greater than 0 mJ/cm and less than or equal to 20 mJ/cm, and the residue of the buffer layer (including gallium) is thinned to meet the requirement of the luminous efficiency of the light emitting device.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (20)
1. A method for manufacturing a light emitting element, comprising:
providing a light emitting diode; and
applying an energy beam to treat a surface of the light emitting diode, wherein a power density of the energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm.
2. The method according to claim 1, wherein the power density of the energy beam is greater than 20 mj/cm and less than or equal to 2000 mj/cm.
3. The method according to claim 2, wherein the energy beam is applied to treat the surface to form a plurality of microstructures.
4. The method of manufacturing a light-emitting element according to claim 3, wherein a height of one of the plurality of microstructures is in a range of 10 nm to 100 nm.
5. The method of manufacturing a light-emitting element according to claim 3, wherein a width of one of the plurality of microstructures is in a range of 10 nm to 1000 nm.
6. The method of claim 3, wherein a pitch between two adjacent microstructures is in a range of 10 nm to 1000 nm.
7. The method according to claim 1, wherein the power density of the energy beam is greater than 0 mj/cm and less than or equal to 20 mj/cm.
8. The method of claim 7, wherein the energy beam is applied to treat the surface to remove at least a portion of the surface.
9. The method of manufacturing a light-emitting element according to claim 1, wherein the step of providing the light-emitting diode includes:
providing a first substrate on which the light emitting diode is formed; and
applying another energy beam to separate the light emitting diode from the first substrate.
10. The method of manufacturing a light-emitting element according to claim 9, wherein a source of the energy beam is different from a source of the another energy beam.
11. The method of manufacturing a light-emitting element according to claim 9, wherein a source of the energy beam is the same as a source of the other energy beam.
12. The method of manufacturing a light-emitting element according to claim 9, wherein the energy beam and the another energy beam are laser beams, respectively.
13. A method for manufacturing a light emitting element, comprising:
providing a first substrate on which a light emitting diode is formed;
applying a first energy beam on the first substrate to separate the light emitting diode from the first substrate and expose the buffer layer of the light emitting diode; and
applying a second energy beam on the buffer layer to form a surface roughness layer on the light emitting diode, wherein the power density of the second energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm.
14. The method of claim 13, wherein the surface roughness layer comprises a plurality of raised microstructures, and the plurality of raised microstructures are separated from each other.
15. The method of claim 14, wherein one of the plurality of protruding microstructures has a trapezoidal, rectangular, or triangular shape in cross-section.
16. The method of manufacturing a light-emitting element according to claim 13, wherein a source of the second energy beam is different from a source of the first energy beam.
17. The method of manufacturing a light-emitting element according to claim 13, wherein a source of the second energy beam is the same as a source of the first energy beam.
18. The method of claim 13, wherein the buffer layer comprises gallium.
19. An electronic device, comprising:
a light emitting element, the method of manufacturing the light emitting element comprising:
providing a light emitting diode; and
applying an energy beam to treat a surface of the light emitting diode, wherein a power density of the energy beam is greater than 0 millijoules per square centimeter and less than or equal to 2000 millijoules per square centimeter; and
and the driving circuit is electrically connected with the light-emitting element.
20. An electronic device, comprising:
a light emitting element, the method of manufacturing the light emitting element comprising:
providing a first substrate on which a light emitting diode is formed;
applying a first energy beam on the first substrate to separate the light emitting diode from the first substrate and expose the buffer layer of the light emitting diode; and
applying a second energy beam to the buffer layer to form a surface roughness layer on the light emitting diode, wherein the power density of the second energy beam is greater than 0 mJ/cm and less than or equal to 2000 mJ/cm; and
and the driving circuit is electrically connected with the light-emitting element.
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US16/821,994 US11239389B2 (en) | 2019-04-18 | 2020-03-17 | Method for manufacturing light-emitting element and electronic device applying light-emitting element |
EP20167018.9A EP3726593A1 (en) | 2019-04-18 | 2020-03-31 | Method for manufacturing light-emitting element and electronic device applying light-emitting element |
KR1020200041378A KR20200123382A (en) | 2019-04-18 | 2020-04-06 | Method for manufacturing light-emitting element and electronic device applying light-emitting element |
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US201962835575P | 2019-04-18 | 2019-04-18 | |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024197860A1 (en) * | 2023-03-31 | 2024-10-03 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display apparatus |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101661984A (en) * | 2009-09-18 | 2010-03-03 | 厦门市三安光电科技有限公司 | Manufacturing method of GaN-based vertical structure light-emitting diode based on inverted rough surface |
US20100151602A1 (en) * | 2008-12-17 | 2010-06-17 | Palo Alto Research Center Incorporated | Laser roughening to improve led emissions |
US20110220933A1 (en) * | 2010-03-09 | 2011-09-15 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
CN102760802A (en) * | 2011-04-29 | 2012-10-31 | 清华大学 | Led |
CN102760799A (en) * | 2011-04-29 | 2012-10-31 | 清华大学 | Manufacturing method of LED |
CN103474522A (en) * | 2012-06-07 | 2013-12-25 | 清华大学 | Preparation method of light emitting diode |
CN105742417A (en) * | 2016-03-09 | 2016-07-06 | 映瑞光电科技(上海)有限公司 | Perpendicular LED chip structure and preparation method therefor |
-
2019
- 2019-11-12 CN CN201911099698.6A patent/CN111834386A/en active Pending
-
2020
- 2020-04-06 KR KR1020200041378A patent/KR20200123382A/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100151602A1 (en) * | 2008-12-17 | 2010-06-17 | Palo Alto Research Center Incorporated | Laser roughening to improve led emissions |
CN101661984A (en) * | 2009-09-18 | 2010-03-03 | 厦门市三安光电科技有限公司 | Manufacturing method of GaN-based vertical structure light-emitting diode based on inverted rough surface |
US20110220933A1 (en) * | 2010-03-09 | 2011-09-15 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
CN102760802A (en) * | 2011-04-29 | 2012-10-31 | 清华大学 | Led |
CN102760799A (en) * | 2011-04-29 | 2012-10-31 | 清华大学 | Manufacturing method of LED |
CN103474522A (en) * | 2012-06-07 | 2013-12-25 | 清华大学 | Preparation method of light emitting diode |
CN105742417A (en) * | 2016-03-09 | 2016-07-06 | 映瑞光电科技(上海)有限公司 | Perpendicular LED chip structure and preparation method therefor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024197860A1 (en) * | 2023-03-31 | 2024-10-03 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display apparatus |
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