CN112864146A - Semiconductor structure, display panel and manufacturing method of electronic element module - Google Patents
Semiconductor structure, display panel and manufacturing method of electronic element module Download PDFInfo
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- CN112864146A CN112864146A CN202110007296.XA CN202110007296A CN112864146A CN 112864146 A CN112864146 A CN 112864146A CN 202110007296 A CN202110007296 A CN 202110007296A CN 112864146 A CN112864146 A CN 112864146A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
Abstract
The invention provides a manufacturing method of an electronic element module, a semiconductor structure and a display panel. The manufacturing method of the electronic element module includes providing a plurality of first microelectronic elements on a first temporary substrate; replacing at least one defective microelectronic element of the plurality of first microelectronic elements with at least one second microelectronic element, wherein the plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the first temporary substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are identical in nature, but at least one of appearance differences, height differences, and orientation differences are provided between the plurality of first microelectronic elements and the at least one second microelectronic element.
Description
Technical Field
The present invention relates to an electronic device module and a method for manufacturing the same, and more particularly, to a semiconductor structure, a display panel and a method for manufacturing an electronic device module.
Background
In the manufacturing process of microelectronic device display panels, it is often necessary to transfer a plurality of microelectronic devices onto a target substrate and connect other devices to the target substrate. For example, in the process of manufacturing a Micro light emitting diode display panel, a large amount of Micro light emitting diodes (Micro LEDs) are required to be transferred onto a display substrate and electrically connected to a driving circuit layer in the display substrate. However, these microelectronic devices may be defective during their growth, resulting in one or more defective microelectronic devices. In order to increase the production yield and reduce the production cost, it is necessary to develop a method for replacing the defective microelectronic devices with high efficiency.
Disclosure of Invention
The invention is directed to a method for manufacturing a semiconductor structure, a display panel and an electronic component module, which has high production yield and low production cost.
According to an embodiment of the present invention, a semiconductor structure is provided, which includes a substrate, a plurality of first microelectronic elements, and at least one second microelectronic element. The plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are same-attribute elements, and at least one of appearance differences, height differences and orientation differences exists between the plurality of first microelectronic elements and the at least one second microelectronic element.
According to another embodiment of the present invention, a display panel is provided, which includes a display substrate, a plurality of first microelectronic devices, and at least one second microelectronic device. The plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the display substrate and electrically connected with the display substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are the same-attribute elements, but at least one of appearance differences, height differences and orientation differences exists between the plurality of first microelectronic elements and the at least one second microelectronic element.
According to still another embodiment of the present invention, there is provided a method of manufacturing an electronic element module, including providing a plurality of first microelectronic elements on a first temporary substrate; replacing at least one defective microelectronic element of the plurality of first microelectronic elements with at least one second microelectronic element, wherein the plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the first temporary substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are identical in nature, but at least one of appearance differences, height differences, and orientation differences are provided between the plurality of first microelectronic elements and the at least one second microelectronic element.
According to another embodiment of the present invention, a semiconductor structure is provided, which includes a substrate, a plurality of first microelectronic elements, at least one second microelectronic element, a first buffer layer, and a second buffer layer. The plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the substrate, and the plurality of first microelectronic elements and the at least one second microelectronic element are same-attribute elements. The first buffer layer is arranged between the plurality of first microelectronic elements and the substrate. The second buffer layer is disposed between the at least one second microelectronic element and the substrate, and at least one of a material difference, an appearance difference, a height difference, and an orientation difference is provided between the first buffer layer and the second buffer layer.
Based on the above, the method for manufacturing an electronic device module according to the embodiment of the invention replaces the defective microelectronic device on the temporary substrate, so that the defective microelectronic device does not exist on the temporary substrate, thereby improving the production yield and reducing the production cost. The semiconductor structure provided by the embodiment of the invention has no defective micro electronic element, so that the production yield of electronic modules (such as display panels) manufactured subsequently is improved, and the production cost is reduced.
Drawings
Fig. 1A to 1H are a method of manufacturing an electronic element module according to an embodiment of the present invention;
FIGS. 2 and 3 are semiconductor structures according to embodiments of the present invention;
fig. 4A to 4D are electronic component modules according to embodiments of the present invention;
FIG. 5A is a schematic diagram of the distribution of the light intensity of the micro light-emitting diodes of the display panel according to the embodiment of the invention;
FIG. 5B is a schematic diagram of the distribution of the light emitting wavelengths of the micro light emitting diodes of the display panel according to the embodiment of the invention;
fig. 6 is a display panel according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Referring to fig. 1A to 1H, a method of manufacturing an electronic element module according to an embodiment of the present invention is shown.
Referring initially to FIG. 1A, shown is: a first buffer layer 103 is provided on the first temporary substrate 100 and a plurality of first microelectronic elements 101 are provided on the first buffer layer 103, wherein each first microelectronic element 101 comprises an electrode 105. The first temporary substrate 100 may be, for example, a plastic substrate, a ceramic substrate, a glass substrate, a sapphire substrate, or other substrates without circuits. The electrode 105 has at least two sub-electrodes 105a and 105b with opposite electrical properties, and may also be disposed between the first microelectronic element 101 and the first buffer layer 103 or disposed on two sides of the first microelectronic element 101, which is not limited herein. However, due to process yield issues, defective microelectronic elements 101F may appear on the first temporary substrate 100. It should be noted that, in the present embodiment, only one defective microelectronic element 101F is taken as an example. However, the present invention is not limited thereto, and the number of defective microelectronic elements 101F on the first temporary substrate 100 may be plural. In addition, the plurality of first microelectronic elements 101 and the defective microelectronic elements 101F are two-dimensionally distributed on the first temporary substrate 100, although fig. 1A is only illustrated in a cross-sectional view.
Referring to FIG. 1B, shown is: the defective microelectronic element 101F and the underlying first buffer layer 103 are removed. That is, the defective microelectronic element 101F and the portion of the first buffer layer 103 corresponding to the defective microelectronic element 101F are removed from the first temporary substrate 100. According to an embodiment of the present invention, the laser may be used to irradiate the first buffer layer 103 under the defective microelectronic element 101F to soften the portion of the first buffer layer 103, so that the defective microelectronic element 101F and the portion of the first buffer layer 103 may be detached from the first temporary substrate 100, but the present invention is not limited thereto as long as the bonding force of the defective microelectronic element 101F and the portion of the first buffer layer 103 can be reduced. According to another embodiment of the present invention, the defective microelectronic element 101F and the first buffer layer 103 thereunder can be directly picked up from the first temporary substrate 100.
Referring to fig. 1C, shown is: a second buffer layer 104 is further provided on a portion of the first temporary substrate 100 on which the first buffer layer 103 is removed. It should be noted that, in fig. 1C, the material of the second buffer layer 104 is the same as the material of the first buffer layer 103, but the present invention is not limited thereto, and the material of the second buffer layer 104 may be different from the material of the first buffer layer 103.
In fig. 1C, the size of the second buffer layer 104 is the same as the size of the first buffer layer 103, but the present invention is not limited thereto, and the size, for example, the width and the thickness, of the second buffer layer 104 may be different from the size of the first buffer layer 103. Referring to fig. 1D, shown is: a second temporary substrate 100A is disposed opposite the first temporary substrate 100, and a second microelectronic element 102 on the second temporary substrate 100A is opposite the second buffer layer 104. The second microelectronic element 102 has an electrode 105, and the second microelectronic element 102 is connected to the second temporary substrate 100A through a connection pad 102C. The second microelectronic element 102 and the plurality of first microelectronic elements 101 are the same-attribute elements, such as the same-color micro light emitting diodes. For example, the second microelectronic element 102 and the plurality of first microelectronic elements 101 are all red micro light emitting diodes, all green micro light emitting diodes, or all blue micro light emitting diodes. Some embodiments may also be applied to other microelectronic devices, including microelectronic devices (e.g., diodes, transistors, integrated circuits) or photonic devices (e.g., laser diodes, photodiodes) that may be controlled to perform predetermined electronic functions. Other embodiments of the invention certain embodiments are also applicable to microchips including circuitry, such as microchips with Si or SOI wafers as materials for logic or memory applications, or GaAs wafers as materials for RF communication applications.
Referring to fig. 1E, shown is: the second microelectronic element 102 is separated from the second temporary substrate 100A and disposed on the second buffer layer 104. According to an embodiment of the present invention, the bonding pads 102C of the second microelectronic element 102 can be irradiated with laser to soften the bonding pads 102C, so that the second microelectronic element 102 can be detached from the second temporary substrate 100A.
In the process shown in fig. 1A to 1E, the defective microelectronic element 101F on the first temporary substrate 100 is replaced with the second microelectronic element 102. It should be particularly noted that in fig. 1D, the number of the second microelectronic elements 102 may be one or more. In an embodiment of the present invention, the number of second microelectronic elements 102 is one, in which case only one defective microelectronic element 101F is replaced with a second microelectronic element 102. In another embodiment of the present invention, the number of the second microelectronic elements 102 is plural, and in such a case, the plurality of defective microelectronic elements 101F are replaced with the second microelectronic elements 102.
In the present embodiment, fig. 1A to 1E show how the semiconductor structure 10 in fig. 1E is manufactured by the method of manufacturing an electronic element module according to the embodiment of the present invention. The semiconductor structure 10 includes a first temporary substrate 100, a plurality of first microelectronic elements 101, and a second microelectronic element 102. In other words, the method for manufacturing an electronic device module according to the embodiment of the invention replaces the defective microelectronic element 101F on the first temporary substrate 100, so that the manufactured semiconductor structure 10 does not have the defective microelectronic element 101F, thereby further improving the yield of the electronic device to be manufactured and reducing the manufacturing cost.
As described above, in some embodiments of the present invention, the laser is used to soften the first buffer layer 103 under the defective microelectronic element 101F to detach the defective microelectronic element 101F from the first temporary substrate 100, and the laser is used to soften the connection pad 102C to detach the second microelectronic element 102 from the second temporary substrate 100A. Such a process method improves the replacement efficiency of the defective microelectronic element 101F by the second microelectronic element 102 based on the characteristic that the laser beam irradiation position is accurate.
In the semiconductor structure 10, a plurality of first microelectronic elements 101 and second microelectronic elements 102 are distributed on the first temporary substrate 100, for example, in an array. The first microelectronic elements 101 and the second microelectronic elements 102 are the same-attribute elements, such as red leds.
In the semiconductor structure 10 shown in fig. 1E, since the first microelectronic elements 101 and the second microelectronic elements 102 can be from different growth wafers, the first microelectronic elements 101 and the second microelectronic elements 102 can have different appearances, such as different sizes or different colors.
In the semiconductor structure 10 shown in fig. 1E, the first buffer layer 103 has no appearance difference from the second buffer layer 104 in size, but the present invention is not limited thereto. The first buffer layer 103 and the second buffer layer 104 may have a difference in appearance. For example, the size of the first buffer layer 103 and the size of the second buffer layer 104 may be different. Or for example, in an embodiment of the invention, the thickness of the second buffer layer 104 is different from the thickness of the first buffer layer 103, so that the height difference exists between the plurality of first microelectronic elements 101 and the plurality of second microelectronic elements 102. Through the buffer layers with different sizes, the size can be determined according to the defect condition of the defective microelectronic element 101F during transfer repair and the defective microelectronic element 102 can be used for replacing the defective microelectronic element, so that the yield is high, and the repair cost is reduced. Furthermore, since the first microelectronic elements 101 are disposed on the first temporary substrate 100 in the step shown in fig. 1A, and the second microelectronic elements 102 are disposed on the first temporary substrate 100 in the step shown in fig. 1D, the two elements are disposed on the first temporary substrate 100 in different steps, and therefore, the first microelectronic elements 101 and the second microelectronic elements 102 may have different orientations, such as different pitches. According to an embodiment of the present invention, when the number of the second microelectronic elements 102 disposed on the first temporary substrate 100 is multiple, the pitch difference between the second microelectronic elements 102 and the first microelectronic elements 101 is the same. In other words, the pitches between the first microelectronic elements 101 are the same as each other, the pitches between the second microelectronic elements 102 are the same as each other, and the pitches of the second microelectronic elements 102 are different from the pitches of the first microelectronic elements 101. According to some embodiments of the present invention, the material of the first buffer layer 103 and the material of the second buffer layer 104 may be the same or different. According to some embodiments of the present invention, the color of the first buffer layer 103 and the color of the second buffer layer 104 may be the same or different. According to some embodiments of the present invention, the thickness of the first buffer layer 103 and the thickness of the second buffer layer 104 may be the same or different. According to some embodiments of the present invention, the width of the first buffer layer 103 and the width of the second buffer layer 104 may be the same or different. Referring next to fig. 1F, shown therein is: the semiconductor structure 10 is disposed opposite the display substrate 106. The display substrate 106 is, for example, a substrate with lines or metal redistribution lines (metal redistribution lines), wherein a driving circuit layer 107 is disposed, for example, transistors (transistors) or Integrated Circuits (ICs), which can be electrically connected to the first microelectronic elements 101 and the second microelectronic elements 102 to control the display of the first microelectronic elements 101 and the second microelectronic elements 102, which is not limited herein.
Referring to fig. 1G, it shows: the first microelectronic elements 101 and the second microelectronic elements 102 are transferred onto the display substrate 106.
Referring to fig. 1H, there is shown: the driving circuit layer 107 is electrically connected to the electrodes 105 of the first microelectronic elements 101, and the driving circuit layer 107 is also electrically connected to the electrodes 105 of the second microelectronic elements 102.
Specifically, fig. 1F to fig. 1H illustrate how the electronic device module 20 is manufactured by using the method for manufacturing an electronic device module according to the embodiment of the invention, wherein the plurality of first microelectronic elements 101 and the plurality of second microelectronic elements 102 are transferred from the semiconductor structure 10 to the display substrate 106 and are electrically connected to the driving circuit layer 107 of the display substrate 106. As described above, since the defective microelectronic element 101F does not exist in the semiconductor structure 10, the defective microelectronic element 101F is not transferred to the display substrate 106, so that the production yield of the electronic element module 20 is improved, and the production cost is reduced.
According to some embodiments of the present invention, the electronic element module 20 is implemented as a display panel, but the present invention is not limited thereto. The electronic component module 20 may be any electronic device having a plurality of first microelectronic elements 101 and second microelectronic elements 102.
For the embodiment in which the electronic device module 20 is implemented as a display panel, the display panel 20 includes a display substrate 106, a plurality of first microelectronic devices 101, and a second microelectronic device 102. The display substrate 106 includes a driving circuit layer 107. The first microelectronic elements 101 and the second microelectronic elements 102 are distributed on the display substrate 106 in an array and electrically connected to the display substrate 106. The first microelectronic elements 101 and the second microelectronic elements 102 are the same-attribute elements, such as the same-color micro light-emitting diodes, like the red micro light-emitting diodes, the same-green micro light-emitting diodes, or the same-blue micro light-emitting diodes.
Since the first microelectronic elements 101 and the second microelectronic elements 102 can be from different growth wafers, the first microelectronic elements 101 and the second microelectronic elements 102 can have different appearances, such as different colors and sizes. Since there may be a size difference between the first microelectronic elements 101 and the second microelectronic elements 102, there may be a height difference between the first microelectronic elements 101 and the second microelectronic elements 102 on the display substrate 106.
In addition, since the first microelectronic elements 101 and the second microelectronic elements 102 in the display panel 20 are transferred from the first temporary substrate 100 to the display substrate 106, when the semiconductor structure 10 has an orientation difference between the first microelectronic elements 101 and the second microelectronic elements 102, the orientation difference is also transferred from the first temporary substrate 100 to the display substrate 106, but the orientation difference is smaller than 10%, so that the subsequent display effect is not affected. Preferably, the ratio of the second microelectronic element 102 to the sum of the first microelectronic element 101 and the second microelectronic element 102 on the first temporary substrate 100 is less than 10%, and the subsequent display effect is not affected.
In summary, the method for manufacturing an electronic device module according to the embodiment of the invention replaces the defective microelectronic device on the temporary substrate, so that the defective microelectronic device does not exist on the temporary substrate, thereby improving the yield of the electronic module (such as a display panel) manufactured subsequently and reducing the manufacturing cost.
In order to fully illustrate various embodiments of the invention, other embodiments of the invention will be described below. It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Referring next to fig. 2, a semiconductor structure is shown according to an embodiment of the invention. The semiconductor structure 200 includes a first temporary substrate 100, a plurality of first microelectronic elements 101, and a second microelectronic element 102. A first buffer layer 103 is disposed between the plurality of first microelectronic elements 101 and the first temporary substrate 100. A second buffer layer 204 is disposed between the second microelectronic element 102 and the first temporary substrate 100. Semiconductor structure 200 differs from semiconductor structure 10 described above in that: the second buffer layer 204 is different in width from the first buffer layer 103 in a direction D1 perpendicular to the normal line of the first temporary substrate 100.
Referring to fig. 3, a semiconductor structure according to an embodiment of the invention is shown. The semiconductor structure 300 includes a first temporary substrate 100, a plurality of first microelectronic elements 101, and a second microelectronic element 102. A first buffer layer 103 is disposed between the plurality of first microelectronic elements 101 and the first temporary substrate 100. A second buffer layer 304 is disposed between the second microelectronic element 102 and the first temporary substrate 100. Semiconductor structure 300 differs from semiconductor structure 10 described above in that: the second buffer layer 304 has a different thickness in a direction D3 parallel to the normal line of the first temporary substrate 100 from the first buffer layer 103, and has a difference in height between the second microelectronic element 102 and the plurality of first microelectronic elements 101.
Referring to fig. 4A, an electronic component module according to an embodiment of the present invention is shown. The electronic element module 400A includes a substrate 400, a plurality of first microelectronic elements 401, and a second microelectronic element 402A. The electronic component module 400A may be implemented as a semiconductor structure or a display panel. When the electronic element module 400A is implemented as a semiconductor structure, the substrate 400 may be the first temporary substrate 100 in the semiconductor structure 10 as shown in fig. 1E. When the electronic component module 400A is implemented as a display panel, the substrate 400 may be the display substrate 106 in the display panel 20 as shown in fig. 1H.
As shown in fig. 4A, the first microelectronic element 401 and the second microelectronic element 402A have different colors. Besides, the width of the second microelectronic element 402A in the direction D1 is slightly larger than the width of each first microelectronic element 401 in the direction D1, and the width of the second microelectronic element 402A in the direction D2 is slightly larger than the width of each first microelectronic element 401 in the direction D2, so the area of the second microelectronic element 402A is slightly larger than the area of each first microelectronic element 401, but the invention is not limited thereto. According to some embodiments of the present invention, the width of the second microelectronic element 402A in the direction D1 may be slightly smaller than or equal to the width of each of the first microelectronic elements 401 in the direction D1, and the width of the second microelectronic element 402A in the direction D2 may be slightly smaller than or equal to the width of each of the first microelectronic elements 401 in the direction D2.
Specifically, according to the embodiment of the present invention, the size difference between the plurality of first microelectronic elements 401 and the second microelectronic element 402A may satisfy the following conditional expression: 0< D12/W1 ≦ 10%, where W1 is the width of each of the first microelectronic elements 401 in a direction perpendicular to the normal direction of the substrate 400, D12 is the difference in the width of each of the first microelectronic elements 401 and the second microelectronic element 402A in this direction, and D12 is a positive number. More than 10% will affect the display effect after subsequent transfer to the display panel.
Referring to fig. 4B, an electronic component module according to an embodiment of the present invention is shown. The electronic component module 400B includes a substrate 400, a plurality of first microelectronic elements 401, and a second microelectronic element 402B. The electronic component module 400B may be implemented as a semiconductor structure or a display panel. The electronic component module 400B includes a substrate 400, a plurality of first microelectronic elements 401, and a second microelectronic element 402B. When the electronic element module 400B is implemented as a semiconductor structure, the substrate 400 may be the first temporary substrate 100 in the semiconductor structure 10 as shown in fig. 1E. When the electronic component module 400B is implemented as a display panel, the substrate 400 may be the display substrate 106 in the display panel 20 as shown in fig. 1H.
As shown in fig. 4B, the plurality of first microelectronic elements 401 and the plurality of second microelectronic elements 402B have a difference in orientation therebetween. Specifically, each of the first microelectronic elements 401 has an axis of symmetry AA ', and the axis of symmetry AA' of each of the first microelectronic elements 401 is parallel to the direction D1. In contrast, the second microelectronic device 402B has a symmetry axis BB ', and an included angle θ is formed between the symmetry axis BB' of the second microelectronic device 402B and the direction D1, where 0< θ ≦ 45 °. Larger than 45 ° may affect the display effect after subsequent transfer to the display panel.
Referring to fig. 4C, an electronic component module according to an embodiment of the present invention is shown. The electronic component module 400C includes a substrate 400, a plurality of first microelectronic elements 401, and a second microelectronic element 402C. The electronic component module 400C may be implemented as a semiconductor structure or a display panel. The electronic component module 400C includes a substrate 400, a plurality of first microelectronic elements 401, and a plurality of second microelectronic elements 402C. When the electronic element module 400C is implemented as a semiconductor structure, the substrate 400 may be the first temporary substrate 100 in the semiconductor structure 10 as shown in fig. 1E. When the electronic component module 400C is implemented as a display panel, the substrate 400 may be the display substrate 106 in the display panel 20 as shown in fig. 1H.
As shown in fig. 4C, each of the first microelectronic devices 401 has an axis of symmetry AA ', and the axis of symmetry AA' of each of the first microelectronic devices 401 is parallel to the direction D1. In contrast, each second microelectronic element 402C has an axis of symmetry BB ', and the axis of symmetry BB' of each second microelectronic element 402C forms an angle θ with the direction D1, where 0< θ ≦ 45 °. The angle between the different second microelectronic elements 402C and the direction D1 is the same. Specifically, the orientations of the plurality of first microelectronic elements 401 are the same as each other, the orientations of the plurality of second microelectronic elements 402C are the same as each other, and the orientations of the plurality of first microelectronic elements 401 are different from the orientations of the plurality of second microelectronic elements 402C, and the difference in orientation between the two groups is fixed.
In one embodiment, not shown, the electronic component module may include a substrate, a plurality of first microelectronic components, a plurality of second microelectronic components, and a plurality of third microelectronic components. The number of the second microelectronic element and the third microelectronic element may be one or more, and the second microelectronic element and the third microelectronic element may be transferred onto the substrate through different temporary substrates. Specifically, the second microelectronic element and the third microelectronic element can be transferred to the substrate of the electronic element module by different temporary substrates in different transfer process stages, so as to repair the defective microelectronic element. In such a case, at least one of the appearance difference, the height difference, and the orientation difference is provided between two of the first microelectronic element, the second microelectronic element, and the third microelectronic element.
Referring to fig. 4D, an electronic component module according to an embodiment of the present invention is shown. The electronic component module 400D includes a substrate 400, a plurality of first microelectronic elements 401, and a plurality of second microelectronic elements 402D. The pitches between the plurality of first microelectronic elements 401 are the same as each other, the pitches between the plurality of second microelectronic elements 402D are the same as each other, and the pitches of the plurality of second microelectronic elements 402D and the plurality of first microelectronic elements 401 are different. In other words, the second microelectronic elements 402D and the first microelectronic elements 401 have a different pitch. Specifically, the pitch between the first microelectronic elements 401 is P1, the minimum pitch between the first microelectronic elements 401 and the second microelectronic elements 402D is P2, and the difference between the pitch between the second microelectronic elements 402D and the first microelectronic elements 401 is defined by P1 and P2. The distance difference meets the conditional expression: 90% ≦ P2/P1<1, in other words, the difference in pitch is less than 10%, and more than 10% will affect the display effect after subsequent transfer to the display panel.
Referring to fig. 5A to 5B, a light emission intensity distribution diagram and a light emission wavelength distribution diagram of the microelectronic element of the display panel according to the embodiment of the invention are respectively shown.
In fig. 5A, the horizontal axis represents the light emission intensity (arbitrary unit), the vertical axis represents the number of electronic components, and the first microelectronic element is represented by a first stripe 501, and the second microelectronic element is represented by a second stripe 502. In fig. 5B, the horizontal axis represents the light emission wavelength (nm) and the vertical axis represents the number of microelectronic elements, and the first microelectronic element is also represented by a first stripe 501 and the second microelectronic element is represented by a second stripe 502.
In the present embodiment, the electronic component module 400C shown in fig. 4C is implemented as a display panel, wherein the first microelectronic component 401 is implemented as a first micro light emitting diode, and the second microelectronic component 402C is implemented as a second micro light emitting diode. From the above description of the embodiments, it can be known that the first microelectronic element 401 and the second microelectronic element 402C are the same in property. It is therefore to be understood that when the first microelectronic element 401 is implemented as a first micro light emitting diode and the second microelectronic element 402C is implemented as a second micro light emitting diode, the first micro light emitting diode and the second micro light emitting diode may be, for example, a red micro light emitting diode, but in an embodiment not shown, may also be a green micro light emitting diode or a blue micro light emitting diode. In other words, the first micro light emitting diode and the second micro light emitting diode may emit light of the same color. However, since the first micro light emitting diode and the second micro light emitting diode may be from different wafers, there may be a difference in light emitting intensity and a difference in light emitting wavelength between the two. In other words, the light emitting intensities of the first micro light emitting diode and the second micro light emitting diode may be different, and there may be a color difference between the light emitted by the first micro light emitting diode and the light emitted by the second micro light emitting diode. Thus, it can be seen in fig. 5A that there is a difference in luminous intensity between a first strip 501 representing a first micro light emitting diode and a second strip 502 representing a second micro light emitting diode. Preferably, the difference in luminous intensity is less than 10%. Similarly, as can be seen in fig. 5B, there is a difference in emission wavelength between a first band 501 representing a first micro light emitting diode and a second band 502 representing a second micro light emitting diode. Preferably, the difference in emission wavelength is less than 10%. Preferably, the difference of the light emitting wavelengths may be greater than or equal to 1 nm and less than or equal to 5 nm, and the second micro light emitting diode with small difference may be used instead, so as to effectively reduce the inventory cost of the micro light emitting diodes, and the difference is not large and the non-uniformity is not caused.
Referring to fig. 6, a display panel according to an embodiment of the present invention is shown. The display panel 600 includes a display substrate 106, red micro-leds 101R and 102R, green micro-leds 101G, and blue micro-leds 101B, wherein the display substrate 106 includes a driving circuit layer 107. The appearance (size and appearance color) of the red micro light-emitting diode 102R is different from the appearance of the red micro light-emitting diode 101R, and the two have an appearance difference. According to an embodiment of the present invention, there is a color difference between the light emitted from the red micro light emitting diode 101R and the light emitted from the red micro light emitting diode 102R.
In summary, the method for manufacturing an electronic device module according to the embodiment of the invention replaces the defective microelectronic device on the temporary substrate, so that the defective microelectronic device does not exist on the temporary substrate, thereby improving the yield of the electronic module (e.g., display panel) manufactured subsequently and reducing the manufacturing cost.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (17)
1. A semiconductor structure, comprising:
a substrate;
a plurality of first microelectronic elements; and
at least one second microelectronic element;
the plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are homogeneous elements, but at least one of appearance differences, height differences and orientation differences exists between the plurality of first microelectronic elements and the at least one second microelectronic element.
2. The semiconductor structure of claim 1, wherein the substrate is a temporary substrate, and further comprising a first buffer layer and a second buffer layer, wherein the first buffer layer is disposed between the plurality of first microelectronic elements and the temporary substrate, the second buffer layer is disposed between the at least one second microelectronic element and the temporary substrate, and at least one of a material difference, an appearance difference, a height difference, and an orientation difference is provided between the first buffer layer and the second buffer layer.
3. The semiconductor structure of claim 1, wherein the first microelectronic elements and the at least one second microelectronic element are micro Light Emitting Diodes (LEDs) with the same light emission color, but at least one of the difference in light emission wavelength and the difference in light emission intensity is provided between the first microelectronic elements and the at least one second microelectronic element.
4. The semiconductor structure of claim 1, wherein the appearance difference between the plurality of first microelectronic elements and the at least one second microelectronic element is an appearance tint difference.
5. The semiconductor structure of claim 1, wherein the appearance difference between the plurality of first microelectronic elements and the at least one second microelectronic element is a size difference, and the size difference satisfies the following conditional expression: 0< D12/W1 ≦ 10%, where W1 is a width of each first microelectronic element in a direction perpendicular to a normal direction of the substrate, D12 is a difference in width of each first microelectronic element and the at least one second microelectronic element in the direction, and D12 is a positive number.
6. The semiconductor structure of claim 1, wherein the number of the at least one second microelectronic element is plural, and the orientation differences between the first microelectronic elements and the second microelectronic elements are the same as each other.
7. A display panel, comprising:
a display substrate;
a plurality of first microelectronic elements; and
at least one second microelectronic element;
the plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the display substrate and electrically connected to the display substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are same-attribute elements, but at least one of appearance differences, height differences and orientation differences exists between the plurality of first microelectronic elements and the at least one second microelectronic element.
8. The display panel of claim 7, wherein the first microelectronic elements and the at least one second microelectronic element are micro Light Emitting Diodes (LEDs) with the same light emission color, but at least one of the difference of light emission wavelength and the difference of light emission intensity is provided between the first microelectronic elements and the at least one second microelectronic element.
9. The display panel of claim 7, wherein the appearance difference between the plurality of first microelectronic elements and the at least one second microelectronic element is an appearance color difference.
10. The display panel of claim 7, wherein the appearance difference between the first microelectronic elements and the at least one second microelectronic element is a size difference, and the size difference satisfies the following conditional expression: 0< D12/W1 ≦ 10%, where W1 is a width of each first microelectronic element in a direction perpendicular to a normal direction of the display substrate, D12 is a difference in width of each first microelectronic element and the at least one second microelectronic element in the direction, and D12 is a positive number.
11. The display panel of claim 7, wherein the number of the at least one second microelectronic element is plural, and the orientation differences between the first microelectronic elements and the second microelectronic elements are the same.
12. A method of manufacturing an electronic component module, comprising:
providing a plurality of first microelectronic elements on a first temporary substrate;
replacing at least one defective microelectronic element of the plurality of first microelectronic elements with at least one second microelectronic element, wherein the plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the first temporary substrate, the plurality of first microelectronic elements and the at least one second microelectronic element are homogeneous elements, but at least one of appearance differences, height differences, and orientation differences are present between the plurality of first microelectronic elements and the at least one second microelectronic element.
13. The method of manufacturing an electronic component module according to claim 12, further comprising:
disposing a first buffer layer on the first temporary substrate;
distributing the plurality of first microelectronic elements on the first buffer layer; and
removing the at least one defective microelectronic element and a portion of the first buffer layer corresponding to the at least one defective microelectronic element from the first temporary substrate.
14. The method of manufacturing an electronic component module according to claim 13, further comprising:
removing the at least one defective microelectronic element and the portion of the first buffer layer;
disposing a second buffer layer on the first temporary substrate;
disposing the at least one second microelectronic element on a second temporary substrate, wherein the at least one second microelectronic element is connected to the second temporary substrate through at least one connection pad;
arranging the second temporary substrate opposite to the first temporary substrate; and
and reducing the bonding force between the at least one second microelectronic element and the second temporary substrate, so that the at least one second microelectronic element is separated from the second temporary substrate and is arranged on the second buffer layer.
15. The method of manufacturing an electronic component module according to claim 13, further comprising:
disposing a second buffer layer on the first temporary substrate; and
and arranging the at least one second microelectronic element on the second buffer layer.
16. The method of manufacturing an electronic component module according to any one of claims 14 to 15, further comprising:
arranging a display substrate; and
and transferring the plurality of first microelectronic elements and the at least one second microelectronic element to the display substrate and electrically connecting the plurality of first microelectronic elements and the at least one second microelectronic element to the display substrate.
17. A semiconductor structure, comprising:
a substrate;
a plurality of first microelectronic elements;
at least one second microelectronic element;
wherein the plurality of first microelectronic elements and the at least one second microelectronic element are distributed on the substrate, and the plurality of first microelectronic elements and the at least one second microelectronic element are homonymous elements;
a first buffer layer disposed between the plurality of first microelectronic elements and the substrate; and
a second buffer layer disposed between the at least one second microelectronic element and the substrate, wherein the first buffer layer and the second buffer layer have at least one of a material difference, an appearance difference, a height difference, and an orientation difference.
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